CN110381718A - A kind of processing method for defending logical field earth station power amplifier module - Google Patents
A kind of processing method for defending logical field earth station power amplifier module Download PDFInfo
- Publication number
- CN110381718A CN110381718A CN201910565361.3A CN201910565361A CN110381718A CN 110381718 A CN110381718 A CN 110381718A CN 201910565361 A CN201910565361 A CN 201910565361A CN 110381718 A CN110381718 A CN 110381718A
- Authority
- CN
- China
- Prior art keywords
- cavity
- power amplifier
- sintered
- amplifier module
- earth station
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
- H05K13/04—Mounting of components, e.g. of leadless components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
- H05K13/04—Mounting of components, e.g. of leadless components
- H05K13/046—Surface mounting
- H05K13/0465—Surface mounting by soldering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/303—Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
Abstract
The present invention provides a kind of processing methods for defending logical field earth station power amplifier module, comprising the following steps: the first microwave circuit boards and the second microwave circuit boards are sintered on cavity by step 1；Step 2 mounts power amplifier chips and is sintered on cavity；Step 3 mounts capacitance-resistance chip and is sintered on the first microwave circuit boards；Step 4 is cleaned the power amplifier module cavity for being sintered component using vapour phase cleaning machine；Radio-frequency joint, isolator and filter are assembled on cavity and are covered by step 5.The present invention has rational design, technical requirement is fully achieved by environmental test in the logical field earth station power amplifier module of defending made by this method, the module also has the characteristics that output power, processing are flexible, high reliablity, stability are high, high gain simultaneously, process flow is easy, scientific, the qualification rate of product and the production efficiency in workshop are improved, is suitble to produce in enormous quantities.
Description
Technical field
The invention mainly relates to power amplifier technical field of manufacturing process, in particular to one kind defends logical field earth station function
The processing method of rate amplification module.
Background technique
The present dual-use technology of satellite communication field continues to develop, and one kind defending logical field earth station power amplifier module
Circuit is all more and more widely used in Ku band satellite field, for example satellite communication ball ball station uses two Ku wave bands
100 watts of Power Amplifier modules can make the transmission power for emitting signal become larger, and can be made with improving transmitting range and two
For hot backup system, that is, even if after one breaks down, earth station system can automatic identification failover to standby host, or
Person's standby host break down etc. systems also can be switched to host from standby host automatically, it is ensured that communication it is continuous and uninterrupted, in satellite
The communications field is extremely important.
Earth station power amplifier module is the important composition unit in TR component, institute in Ku wave band Connectors for Active Phased Array Radar
Just seem all extremely important to defend logical field earth station power amplifier module, processing method is also even more important.But it is existing to add
There are still shortcoming, stability, output power and production efficiencys to need to be improved for work method.
Summary of the invention
The present invention provides a kind of processing method for defending logical field earth station power amplifier module, it is therefore intended that solves existing add
The deficiency of work method improves stability, output power and the production efficiency of power amplifier module, produces product batch metaplasia.
To achieve the goals above, the technical solution adopted by the present invention are as follows: one kind defends logical field earth station power amplification mould
The processing method of block, which comprises the following steps:
First microwave circuit boards and the second microwave circuit boards are sintered on cavity by step 1；
Step 2 mounts power amplifier chips and is sintered on cavity；
Step 3 mounts capacitance-resistance chip and is sintered on the first microwave circuit boards；
Step 4 is cleaned the power amplifier module cavity for being sintered component using vapour phase cleaning machine；
Radio-frequency joint, isolator and filter are assembled on cavity and are covered by step 5.
Further, the specific operation method is as follows for the step 1:
Step 1.1 will all stick 3M high temperature dwell on first microwave circuit boards and the second microwave circuit boards front and chamber outer wall
Retaining tape, with the extra adhesive tape of scalpel margins of excision；
Step 1.2 wipes two pieces of microwave circuits in two pieces of microwave circuit backs, weld tabs after molding and cavity with acetone cotton rub
Plate sintered location is simultaneously dried, and weld tabs front and back sides is coated one layer of low-residual scaling powder, and weld tabs and microwave circuit boards are put into
In cavity, after the extruding microwave circuit boards of tweezers gently, it is packed into the first sintered compact and the second sintered compact；
The cavity components for mounting microwave circuit boards are placed on heating platform and are sintered by step 1.3, put cavity after the completion of sintering
It sets and radiates on heat sink, press sintered compact and remove.
Further, the temperature setting of heating platform is (240 ± 5) DEG C in the step 1.3, and sintering time is (4 ~ 5)
min。
Further, the specific operation method is as follows for the step 2:
Step 2.1 puts suitable soldering paste using pneumatic dispenser on corresponding pad, by power amplifier chips U1 and power amplifier chips U2
It mounts on cavity；
The cavity for posting device is placed on heating platform and is sintered by step 2.2, and cavity is placed on radiation aluminium after the completion of sintering
It radiates on plate to cooling.
Further, in the step 2.1, the soldering paste fusing point used is 183 DEG C；
In the step 2.2, the temperature setting of heating platform is (205 ± 5) DEG C, and sintering time is (30 ~ 40) s.
Further, the specific operation method is as follows for the step 3:
Step 3.1 is mounted microwave capacitors, filter capacitor, storage capacitor and resistance to the first microwave electricity using pneumatic dispenser
On the plate of road；
The cavity components for mounting capacitance resistance ware are placed on heating platform and are sintered by step 3.2, after the completion of sintering, remove
Cavity components are simultaneously placed on radiating block heat dissipation to cooling.
Further, in the step 3.1, microwave capacitors are equipped with 3, respectively C1, C2 and C3；Filter capacitor is equipped with 4
Only, respectively C4, C5, C6 and C7, and 4 filter capacitors are 100pF；Storage capacitor be equipped with 3, respectively C8, C9 and
C10, and 3 storage capacitors are 1uF；Resistance is equipped with 4, respectively R1, R2, R5, R6, and 4 resistance are 10 Ω；
In the step 3.2, the temperature setting of heating platform is (150 ± 5) DEG C, and sintering time is (30 ~ 40) s.
Further, in the step 4, the solution used inside vapour phase cleaning machine is acetone soln.
Further, the specific operation method is as follows for the step 5:
Radio-frequency joint K1 and K2 are assembled on cavity by step 5.1；
Isolator U4 is assembled on cavity by step 5.2；
Filter U3 is assembled on cavity by step 5.3；
Step 5.4 locks the first cover board and the second cover board using flat head screw.
Further, in the step 5.2, isolator model RTW1502；
In the step 5.4, flat head screw model M2 × 6 used, quantity is 26.
Compared with prior art, the invention has the benefit that realizing one kind by microelectronics group packaging technology technology
The processing and fabricating for defending logical field earth station power amplifier module, the logical field earth station power amplifier module of defending made pass through
Technical requirement is fully achieved in environmental test, while the module also has output power, processes flexible, high reliablity, is steady
The characteristics of qualitative height, high gain, process flow is easy, scientific, improves the qualification rate of product and the production efficiency in workshop, fits
It closes and produces in enormous quantities.
It is to be understood that above-mentioned general description and following specific embodiments are merely illustrative and illustrative, not
The range of the invention to be advocated can be limited.
Detailed description of the invention
Following attached drawing is part of specification of the invention, depicts example embodiments of the present invention, appended attached
Figure is used to illustrate the principle of the present invention together with the description of specification.
Fig. 1 is procedure of processing flow chart in the present invention；
Fig. 2 is the first microwave circuit boards schematic diagram in the present invention；
Fig. 3 is the second microwave circuit boards schematic diagram in the present invention；
Fig. 4 is that microwave circuit boards are sintered schematic diagram in the present invention；
Fig. 5 is that power amplifier chips are sintered schematic diagram in the present invention；
Fig. 6 is that capacitance resistance ware is sintered schematic diagram in the present invention；
Fig. 7 is that centre halfback of the present invention leads to field earth station power amplifier module assembling schematic diagram；
Fig. 8 is that centre halfback of the present invention leads to field earth station power amplifier module cavity schematic diagram；
Fig. 9 is the first cover plate schematic diagram in the present invention；
Figure 10 is the second cover plate schematic diagram of the invention；
Figure 11 is the first sintered compact schematic diagram of the invention；
Figure 12 is the second sintered compact schematic diagram of the invention.
Specific embodiment
The existing various exemplary embodiment that the present invention will be described in detail, the detailed description are not considered as to limit of the invention
System, and it is understood as the more detailed description to certain aspects of the invention, characteristic and embodiment.
Without departing substantially from the scope or spirit of the invention, the specific embodiment of description of the invention can be done more
Kind improvements and changes, this will be apparent to those skilled in the art.Other realities obtained by specification of the invention
Applying mode for technical personnel is apparent obtain.Present specification and embodiment are merely exemplary.
A kind of processing method for defending logical field earth station power amplifier module, comprising the following steps:
Step 1, reference attached drawing 2-4, the first microwave circuit boards and the second microwave circuit boards are sintered on cavity；
Step 1.1 will all paste 3M high temperature protection adhesive tape on 2 pieces of microwave circuit boards fronts and chamber outer wall, be cut off with scalpel
Edge redundance 3M adhesive tape, wherein 2 pieces of microwave circuit boards use 5880 microwave circuit boards of Rogers；
Step 1.2, reference attached drawing 4, wipe in 2 pieces of microwave circuit backs, weld tabs after molding and cavity 2 pieces with acetone cotton rub
Microwave circuit boards sintered location is simultaneously dried, and one layer of low-residual scaling powder is coated on weld tabs front and back sides, is placed weld tabs with tweezers
In the cavity, then by 2 pieces of microwave circuit boards for posting 3M adhesive tape it is put into cavity, with the extruding microwave circuit boards of tweezers gently,
It comes into full contact with it with weld tabs, is packed into the first sintered compact and the second sintered compact；
Step 1.3, reference attached drawing 4, it is (240 ± 5) DEG C heated flat that the cavity components for mounting microwave circuit boards, which are placed on temperature,
It is sintered on platform, is sintered (4 ~ 5) min, remove cavity rapidly after scolding tin thawing and be placed on heat sink, press microwave with scoop
Circuit board sintered compact removes sintered compact after pressing (10 ~ 20) s, is torn 3M high temperature gummed tape on microwave circuit boards with scalpel
It removes.
Step 2, reference attached drawing 5 mount power amplifier chips and are sintered on cavity；
Step 2.1 puts suitable 183 DEG C of soldering paste using pneumatic dispenser on corresponding pad, and power amplifier chips U1 and U2 are pasted
It is attached on cavity, wherein power amplifier chips U1 model FLM1314-9F, power amplifier chips U2 model TIM1414-7-252；
The cavity for posting device is placed on temperature to be sintered on (205 ± 5) DEG C heating platform by step 2.2, is sintered (30 ~ 40)
S adjusts power pipe in tweezers after soldering paste thawing by a small margin, can solve device set up a monument, rosin joint, position it is inclined
The problems such as shifting, is removed cavity and is placed on heat-dissipating aluminium plate and radiated to cooling after the completion of sintering with tweezers.
Step 3, reference attached drawing 6 mount capacitance-resistance chip and are sintered on the first microwave circuit boards；
Step 3.1 puts appropriate 120 DEG C of soldering paste using pneumatic dispenser on corresponding pad, then by microwave capacitors 3
600S0R4BT250XT(C1, C2, C3), the filter capacitor (C4, C5, C6, C7) of 4 100pF, 3 1uF storage capacitor (C8
, C9, C10) and 4 10 Ω resistance (R1, R2, R5, R6) attachment on the first microwave circuit boards；
Step 3.2, the cavity components for mounting capacitance resistance ware are placed on temperature be (150 ± 5) DEG C heating platform on be sintered,
Sintering time is (30 ~ 40) s, after soldering paste thawing, is equally adjusted by a small margin with tweezers to device, after the completion of sintering, is used
Tweezers, which are removed cavity and are placed on radiating block, to radiate to cooling.
Step 4 is cleaned the power amplifier module cavity for being sintered component using vapour phase cleaning machine, and wherein vapour phase is clear
The solution used inside washing machine is acetone soln, by cavity face down when cleaning, avoids Wall deformation, breakage in operation.
Step 5, reference attached drawing 7, radio-frequency joint, isolator and filter are assembled on cavity and are covered；
Radio-frequency joint K1 and K2 are assembled on cavity by step 5.1；
Isolator RTW1502(U4) is assembled on cavity by step 5.2；
Filter U3 is assembled on cavity by step 5.3；
Step 5.4 locks the first cover board 3 and the second cover board 4 using 26 flat head screws of M2 × 6.
So far, a kind of processing method for defending logical field earth station power amplifier module completes.
In conclusion the present invention realizes one kind and defends logical field earth station power by microelectronics group packaging technology technology
Skill is fully achieved by environmental test in the processing and fabricating of amplification module, the logical field earth station power amplifier module of defending made
Art index request, while the module also has the spy of flexible output power, processing, high reliablity, stability height, high gain
Point, process flow is easy, scientific, improves the qualification rate of product and the production efficiency in workshop, is suitble to produce in enormous quantities.
The foregoing is merely the schematical specific embodiments of the present invention, before not departing from conceptions and principles of the invention
It puts, the equivalent changes and modifications that any those skilled in the art is made should belong to the scope of protection of the invention.
Claims (10)
1. a kind of processing method for defending logical field earth station power amplifier module, which comprises the following steps:
First microwave circuit boards and the second microwave circuit boards are sintered on cavity by step 1；
Step 2 mounts power amplifier chips and is sintered on cavity；
Step 3 mounts capacitance-resistance chip and is sintered on the first microwave circuit boards；
Step 4 is cleaned the power amplifier module cavity for being sintered component using vapour phase cleaning machine；
Radio-frequency joint, isolator and filter are assembled on cavity and are covered by step 5.
2. a kind of processing method for defending logical field earth station power amplifier module according to claim 1, which is characterized in that
The specific operation method is as follows for the step 1:
Step 1.1 will all stick 3M high temperature dwell on first microwave circuit boards and the second microwave circuit boards front and chamber outer wall
Retaining tape, with the extra adhesive tape of scalpel margins of excision；
Step 1.2 wipes two pieces of microwave circuits in two pieces of microwave circuit backs, weld tabs after molding and cavity with acetone cotton rub
Plate sintered location is simultaneously dried, and weld tabs front and back sides is coated one layer of low-residual scaling powder, and weld tabs and microwave circuit boards are put into
In cavity, after the extruding microwave circuit boards of tweezers gently, it is packed into the first sintered compact and the second sintered compact；
The cavity components for mounting microwave circuit boards are placed on heating platform and are sintered by step 1.3, put cavity after the completion of sintering
It sets and radiates on heat sink, press sintered compact and remove.
3. a kind of processing method for defending logical field earth station power amplifier module according to claim 2, which is characterized in that
The temperature setting of heating platform is (240 ± 5) DEG C in the step 1.3, and sintering time is (4 ~ 5) min.
4. a kind of processing method for defending logical field earth station power amplifier module according to claim 1, which is characterized in that
The specific operation method is as follows for the step 2:
Step 2.1 puts suitable soldering paste using pneumatic dispenser on corresponding pad, by power amplifier chips U1 and power amplifier chips U2
It mounts on cavity；
The cavity for posting device is placed on heating platform and is sintered by step 2.2, and cavity is placed on radiation aluminium after the completion of sintering
It radiates on plate to cooling.
5. a kind of processing method for defending logical field earth station power amplifier module according to claim 4, which is characterized in that
In the step 2.1, the soldering paste fusing point used is 183 DEG C；
In the step 2.2, the temperature setting of heating platform is (205 ± 5) DEG C, and sintering time is (30 ~ 40) s.
6. a kind of processing method for defending logical field earth station power amplifier module according to claim 1, which is characterized in that
The specific operation method is as follows for the step 3:
Step 3.1 is mounted microwave capacitors, filter capacitor, storage capacitor and resistance to the first microwave electricity using pneumatic dispenser
On the plate of road；
The cavity components for mounting capacitance resistance ware are placed on heating platform and are sintered by step 3.2, after the completion of sintering, remove
Cavity components are simultaneously placed on radiating block heat dissipation to cooling.
7. a kind of processing method for defending logical field earth station power amplifier module according to claim 6, which is characterized in that
In the step 3.1, microwave capacitors are equipped with 3, respectively C1, C2 and C3；Filter capacitor is equipped with 4, respectively C4, C5, C6
And C7, and 4 filter capacitors are 100pF；Storage capacitor is equipped with 3, respectively C8, C9 and C10, and 3 storage capacitors are equal
For 1uF；Resistance is equipped with 4, respectively R1, R2, R5, R6, and 4 resistance are 10 Ω；
In the step 3.2, the temperature setting of heating platform is (150 ± 5) DEG C, and sintering time is (30 ~ 40) s.
8. a kind of processing method for defending logical field earth station power amplifier module according to claim 1, which is characterized in that
In the step 4, the solution used inside vapour phase cleaning machine is acetone soln.
9. a kind of processing method for defending logical field earth station power amplifier module according to claim 1, which is characterized in that
The specific operation method is as follows for the step 5:
Radio-frequency joint K1 and K2 are assembled on cavity by step 5.1；
Isolator U4 is assembled on cavity by step 5.2；
Filter U3 is assembled on cavity by step 5.3；
Step 5.4 locks the first cover board and the second cover board using flat head screw.
10. a kind of processing method for defending logical field earth station power amplifier module according to claim 9, feature exist
In, in the step 5.2, isolator model RTW1502；
In the step 5.4, flat head screw model M2 × 6 used, quantity is 26.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910565361.3A CN110381718A (en) | 2019-08-01 | 2019-08-01 | A kind of processing method for defending logical field earth station power amplifier module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910565361.3A CN110381718A (en) | 2019-08-01 | 2019-08-01 | A kind of processing method for defending logical field earth station power amplifier module |
Publications (1)
| Publication Number | Publication Date |
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| CN110381718A true CN110381718A (en) | 2019-10-25 |
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ID=68250985
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910565361.3A Pending CN110381718A (en) | 2019-08-01 | 2019-08-01 | A kind of processing method for defending logical field earth station power amplifier module |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111447756A (en) * | 2020-05-18 | 2020-07-24 | 安徽华东光电技术研究所有限公司 | Processing method of front-stage module in satellite communication field |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140070397A1 (en) * | 2012-09-13 | 2014-03-13 | Lakshminarayan Viswanathan | High power semiconductor package subsystems |
| CN107683027A (en) * | 2017-09-01 | 2018-02-09 | 安徽华东光电技术研究所 | The processing method of the high-power wave detector of X-band |
| CN107708400A (en) * | 2017-09-01 | 2018-02-16 | 安徽华东光电技术研究所 | Power connects the processing method of pulse amplifier in X-band |
| CN109769352A (en) * | 2019-03-14 | 2019-05-17 | 安徽华东光电技术研究所有限公司 | A kind of production method of 80W power amplifier module |
-
2019
- 2019-08-01 CN CN201910565361.3A patent/CN110381718A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140070397A1 (en) * | 2012-09-13 | 2014-03-13 | Lakshminarayan Viswanathan | High power semiconductor package subsystems |
| CN107683027A (en) * | 2017-09-01 | 2018-02-09 | 安徽华东光电技术研究所 | The processing method of the high-power wave detector of X-band |
| CN107708400A (en) * | 2017-09-01 | 2018-02-16 | 安徽华东光电技术研究所 | Power connects the processing method of pulse amplifier in X-band |
| CN109769352A (en) * | 2019-03-14 | 2019-05-17 | 安徽华东光电技术研究所有限公司 | A kind of production method of 80W power amplifier module |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111447756A (en) * | 2020-05-18 | 2020-07-24 | 安徽华东光电技术研究所有限公司 | Processing method of front-stage module in satellite communication field |
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Application publication date: 20191025 |