CN109769352A - A kind of production method of 80W power amplifier module - Google Patents
A kind of production method of 80W power amplifier module Download PDFInfo
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- CN109769352A CN109769352A CN201910193901.XA CN201910193901A CN109769352A CN 109769352 A CN109769352 A CN 109769352A CN 201910193901 A CN201910193901 A CN 201910193901A CN 109769352 A CN109769352 A CN 109769352A
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- frequency circuit
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a kind of production methods of 80W power amplifier module, which comprises the steps of: cleaning；The eutectic of amplifier chip welds；The assembly of high-frequency circuit；The sintering of component and insulator；The sintering of eutectic component；Wire bonding；Capping.The production method of this 80W power amplifier module of the present invention, can convenience and high-efficiency manufacture, meet production requirement, with good application prospect.
Description
Technical field
The invention belongs to power amplifier techniques field, more specifically to a kind of system of 80W power amplifier module
Make method.
Background technique
As human society enters the age of information, wireless communication technique has development at full speed, from mobile phone, wireless local area
Net, bluetooth etc., arrive aerospace interplanetary probe, be deep into the various aspects of today's social life, become social life and
Develop indispensable a part.Wireless telecom equipment is developed to of today by the epoch that initial volume is huge and has a single function
Pocket-sized is integrated with the powerful circuit of types of functionality between heart.These earth-shaking variations, all be unable to do without radio frequency with it is micro-
The support of wave technology.And burgeoning application demand promotes frequency microwave field constantly to study, and updates.Almost
In all radio frequencies and microwave system, it is all be unable to do without the amplification of signal, microwave power amplifier is maximum as power consumption in system, produces
Raw non-linear strongest module, its performance will directly affect the superiority and inferiority of system performance, risen extremely in radio frequency microwave system
Main effect.Microwave power amplifier is wireless communication, radar, the Primary Component in electronic countermeasure and frequency microwave system
Important active module embedded therein in system.
Summary of the invention
Present invention aim to address problem of the existing technology, a kind of 80W power conveniently manufactured is provided and is put
The production method of big device module.
To achieve the goals above, the technical scheme adopted by the invention is as follows: provided this 80W power amplifier module
Production method, which comprises the steps of:
Step 1): cleaning, this step are completed to carry out the cavity of 80W power amplifier module and the structural member of cover board clear
It washes；
Step 2): the eutectic welding of amplifier chip, this step completes between amplifier bare chip and amplifier carrier, core
Eutectic weldering between chip capacitor and amplifier carrier；
Step 3): the large-area welding between high-frequency circuit board and cavity is completed in the assembly of high-frequency circuit；
Step 4): the sintering of component and insulator, 1) complete the sintering of component and insulator on high-frequency circuit board；2)
Insulator and microstrip line manual welding；
Step 5): the sintering of eutectic component, this step complete the sintering of eutectic component；
Step 6): wire bonding, this step complete the wire bonding of amplifier chip, chip capacity, microstrip line；
Step 7): capping, this step complete the installation of cover board.
To keep above-mentioned technical proposal more detailed and specific, the present invention also provides optimization technique sides further below
Case, to obtain satisfied practical function:
It in the step 1), is cleaned using structural member of the alcohol to above-mentioned cavity and cover board, with nitrogen gun by device
Then part drying is dried in drying box, and 80~90 DEG C of temperature, the time 10~15 minutes.
Specifically comprise the following steps: the weld tabs for 1) selecting fusing point to be Au80Sn20 for 280 DEG C of ingredients, root in the step 2)
The size of required weld tabs is cut according to the size of amplifier chip；2) it is 310~315 DEG C by the temperature setting of eutectic platform, will amplifies
Device carrier is fixed on eutectic platform, completed between amplifier chip and amplifier carrier under the microscope and chip capacity with put
Eutectic welding between big device carrier；3) the eutectic component after eutectic is placed in spare in gel box.
High-frequency circuit plate surface is sticked into welding resistance adhesive tape in the step 3), is cut according to the shape of high-frequency circuit board
Welding surface in the weld tabs two sides cut and cavity is brushed scaling powder, weld tabs is put into the corresponding position of cavity by weld tabs
It flattens, then high-frequency circuit board is put into cavity and is guaranteed smooth；Prepare a heating platform, temperature setting is 240 DEG C
~250 DEG C, at the same by tooling, briquetting by cavity place with heating platform on, with guarantee high-frequency circuit board welding penetration rate,
After soldering paste sufficiently melts, removes cavity and be cooled to room temperature.
It needs to clean high-frequency circuit board and cavity welding module after the step 3) welding.
It is handled by dispensing machine equipment a soldering paste is carried out at the component pad on high-frequency circuit board in the step 4)；
Tin cream is coated in respectively for electric(al) insulator, RF isolation surrounding and cavity for electric(al) insulator, RF isolation by dispenser
Sub- inner wall of the hole installing, and cavity will be installed to for electric(al) insulator and RF isolation respectively and corresponded at mounting hole；Component is put
It is placed on the corresponding position of high-frequency circuit board；Prepare a heating platform, temperature setting is 205 DEG C~215 DEG C, is reached to temperature
After setting value, the high-frequency circuit assembly for posting component is placed on heating platform, after solder paste melts, utilizes heat-insulated hand
Set removes component from heating platform, is cooled to room temperature；It, respectively will be for electrical isolation by electric iron temperature setting (350 ± 5) DEG C
Son and RF isolation are welded on corresponding microstrip line.
The high-frequency circuit board component of welding component component is placed in vapour phase cleaning machine after the step 4) and is cleaned, clearly
Wash the time 15~20 minutes.
It carries out cutting weld tabs according to eutectic component shape made of the step 2) in the step 5), the weldering that will have been cut
Welding surface brushes scaling powder in piece two sides and cavity, and being put into the corresponding position of cavity for weld tabs is flattened, then will be total to
Brilliant component is put into cavity and guarantees smooth；Prepare a heating platform, temperature setting is 205 DEG C~215 DEG C, is reached to temperature
After setting value, component is placed on heating platform, after solder paste melts, component is removed from heating platform, is cooled to
Room temperature.
In step 7), sub-miniature A connector is installed to cavity corresponding position with screw, is fixed to the cover board of module using screw
On cavity, module cover assembly is completed.
The production method of 80W power amplifier module of the present invention compared with prior art, have the advantage that the present invention this
The production method of kind of 80W power amplifier module, can convenience and high-efficiency manufacture, with good application prospect.
Detailed description of the invention
The label in content and figure expressed by the attached drawing to this specification is briefly described below:
Fig. 1 is a kind of 80W power amplifier module outline structural diagram of the present invention；
Fig. 2 is a kind of 80W power amplifier module eutectic schematic diagram of the present invention；
Fig. 3 is a kind of 80W power amplifier module high-frequency circuit assembling schematic diagram of the present invention；
Fig. 4 is a kind of 80W power amplifier module wire bonding schematic diagram of the present invention；
Fig. 5 is a kind of 80W power amplifier module covering plate structure schematic diagram of the present invention；
1, amplifier carrier, 2, chip capacity, 3, amplifier chip, 4, cavity, 5, for electric(al) insulator, 6, high-frequency circuit
Plate, 7, RF isolation, 8, M2X6 cheese head screw, 9, sub-miniature A connector, 10, eutectic component.
Specific embodiment
Below against attached drawing, by the description of the embodiment, making to a specific embodiment of the invention further details of
Explanation.
Step 1): cleaning
The cavity of 80W power amplifier module and the structural member of cover board are cleaned in the completion of this step；
Step 2): the eutectic welding of amplifier chip
This step completes the eutectic between amplifier bare chip and amplifier carrier, between chip capacity and amplifier carrier
Weldering.
Step 3): the assembly of high-frequency circuit
The assembly of this step includes the following contents:
1) large-area welding between high-frequency circuit board and cavity is completed；
2) cleaning of high-frequency circuit board and cavity welding module is completed；
Step 4): the sintering of component and insulator
This step mainly completes following operate:
1) sintering of component and insulator on high-frequency circuit board is completed；
2) insulator and microstrip line manual welding；
3) cleaning of component is completed；
Step 5): the sintering of eutectic component
This step mainly completes the sintering of eutectic component；
Step 6): wire bonding
This step mainly completes the wire bonding of amplifier chip, chip capacity, microstrip line；
Step 7): capping
This step mainly completes the installation of cover board；
So far, a kind of 80W power amplifier module completes.
Specifically, a kind of production method of 80W power amplifier module, includes the following steps:
Step 1): cleaning
Structural member to 80W power amplifier module includes that the structural member of cavity and cover board cleans.As shown in fig. 1
For power amplifier module outline structural diagram.
The structural members such as above-mentioned cavity and cover board are cleaned using alcohol, are dried up device then dry with nitrogen gun
It is dried in dry case, 80~90 DEG C of temperature, the time 10~15 minutes.
Step 2): amplifier chip eutectic welding
1) weld tabs that fusing point is Au80Sn20 for 280 DEG C of ingredients is selected, required weldering is cut according to the size of amplifier chip
The size of piece.
2) it is 310~315 DEG C by the temperature setting of eutectic platform, amplifier carrier 1 is fixed on eutectic platform, in microscope
The lower eutectic completed between amplifier chip 3 and amplifier carrier 1 and between chip capacity 2 and amplifier carrier 1 welds.
3) the eutectic component 10 after eutectic is placed in spare in gel box.
If Fig. 2 is 10 structural schematic diagram of eutectic component, wherein amplifier carrier 1 is molybdenum copper substrate.
Step 3): the assembly of high-frequency circuit
1) welding resistance adhesive tape is sticked on 1 surface of high-frequency circuit board, selects with a thickness of 0.05mm, 217 DEG C of ingredients of fusing point are
The weld tabs of Sn96.5Ag3Cu0.5 is cut according to the shape of high-frequency circuit board 6, by the weld tabs two sides cut and cavity
Interior welding surface brushes scaling powder, and weld tabs is put into the corresponding position of cavity and is flattened, high-frequency circuit board 6 is then put into cavity
In 4 and guarantee smooth.
Prepare a heating platform, temperature setting is 240 DEG C~250 DEG C, while by tooling, briquetting by cavity place with
On heating platform, to guarantee that the penetration rate of high-frequency circuit board welding is removed cavity and be cooled to room temperature after soldering paste sufficiently melts.
2) cavity being welded is placed in vapour phase cleaning machine and is cleaned, scavenging period 15~20 minutes, to effectively remove
Scaling powder.
Step 4): the sintering of component and insulator
1) sintering of component and insulator on high-frequency circuit board is completed；
The solder(ing) paste that fusing point is Pb37Sn63 for 183 DEG C of ingredients is selected, by dispensing machine equipment on high-frequency circuit board
A soldering paste processing is carried out at component pad；
Tin cream is coated in respectively by dispenser for around electric(al) insulator 5, RF isolation 7 and cavity is for electrical isolation
Son, the sub- inner wall of the hole installing of RF isolation, and the corresponding mounting hole of cavity 4 will be installed to for electric(al) insulator 5 and RF isolation 7 respectively
Place.
According to Fig. 3, the component of C7, C8, C9, C10, C11, C12, C13, C14, R1, R2, R3, R4 will be indicated on drawing
It is placed on the corresponding position of high-frequency circuit board one by one.
Prepare a heating platform, temperature setting is 205 DEG C~215 DEG C, after temperature reaches setting value, will post first device
The high-frequency circuit assembly of part is placed on heating platform, after solder paste melts, is removed from heating platform using proximity gloves
Component is cooled to room temperature.
2) insulator manual welding；It, respectively will be exhausted for electric(al) insulator and radio frequency by electric iron temperature setting (350 ± 5) DEG C
Edge is welded on corresponding microstrip line.
3) component that upper step is completed is placed in vapour phase cleaning machine and is cleaned, scavenging period 15~20 minutes, with effective
Remove the remaining scaling powder of solder paste melts.
Using microscopic examination component install position, put it is smooth, placed in the middle, there is not allowed that set up a monument, tin connection, rosin joint；
Using multimeter detection for electric(al) insulator and RF isolation whether there is short circuit, component is placed after passed examination, wait it is subsequent
Module uses when assembling.
Step 5): the sintering of eutectic component
1) select the weld tabs that fusing point is Pb37Sn63 for 183 DEG C of ingredients, according to step 2) at eutectic component shape carry out
Cut weld tabs, welding surface in the weld tabs two sides cut and cavity brushed into scaling powder, by weld tabs to be put into cavity corresponding
It is flattened in position, then eutectic component 10 is put into cavity 4 and is guaranteed smooth.
2) prepare a heating platform, temperature setting is 205 DEG C~215 DEG C, and after temperature reaches setting value, component is put
It is placed on heating platform, after solder paste melts, removes component from heating platform using proximity gloves, be cooled to room temperature.
Step 6): wire bonding
As shown in Figure 4, the wire bonding of amplifier chip, chip capacity, microstrip line is completed according to drawing；
Step 7): capping
Sub-miniature A connector is installed to cavity corresponding position with screw, the cover board of module is fixed on cavity using screw, it is complete
It is assembled at module cover, sub-miniature A connector 9 is specifically installed to 4 corresponding position of cavity using the cheese head screw of M2X6 8, utilizes spiral shell
The cover board of module is fixed on cavity by nail, completes module cover assembly.
So far, a kind of 80W power amplifier module completes.
The production method of this 80W power amplifier module of the present invention, can convenience and high-efficiency manufacture, meet life
Production demand, with good application prospect.
The present invention is exemplarily described above in conjunction with attached drawing, but the present invention is not limited to aforesaid way, only
The improvement for the various unsubstantialities to be carried out using the inventive concept and technical scheme of the present invention directly applies to other occasions
, it falls within the scope of protection of the present invention.
Claims (9)
1. a kind of production method of 80W power amplifier module, which comprises the steps of:
Step 1): the cavity of 80W power amplifier module and the structural member of cover board are cleaned in cleaning, the completion of this step；
Step 2): the eutectic welding of amplifier chip, this step is completed between amplifier bare chip and amplifier carrier, chip is electric
The eutectic held between amplifier carrier welds；
Step 3): the large-area welding between high-frequency circuit board and cavity is completed in the assembly of high-frequency circuit；
Step 4): the sintering of component and insulator, 1) complete the sintering of component and insulator on high-frequency circuit board；2) it insulate
Son and microstrip line manual welding；
Step 5): the sintering of eutectic component, this step complete the sintering of eutectic component；
Step 6): wire bonding, this step complete the wire bonding of amplifier chip, chip capacity, microstrip line；
Step 7): capping, this step complete the installation of cover board.
2. the production method of 80W power amplifier module described in accordance with the claim 1, it is characterised in that: in the step 1),
It is cleaned using structural member of the alcohol to above-mentioned cavity and cover board, device is dried up with nitrogen gun and is then dried in drying box
It is dry, 80~90 DEG C of temperature, the time 10~15 minutes.
3. the production method of 80W power amplifier module described in accordance with the claim 1, it is characterised in that: in the step 2)
Specifically comprise the following steps: the weld tabs for 1) selecting fusing point to be Au80Sn20 for 280 DEG C of ingredients, is cut out according to the size of amplifier chip
Cut the size of required weld tabs；2) it is 310~315 DEG C by the temperature setting of eutectic platform, amplifier carrier is fixed on eutectic platform,
The eutectic between amplifier chip and amplifier carrier and between chip capacity and amplifier carrier is completed under the microscope to weld
It connects；3) the eutectic component after eutectic is placed in spare in gel box.
4. the production method of 80W power amplifier module described in accordance with the claim 1, it is characterised in that: in the step 3)
High-frequency circuit plate surface is sticked into welding resistance adhesive tape, carries out cutting weld tabs according to the shape of high-frequency circuit board, the weld tabs that will have been cut
Welding surface brushes scaling powder in two sides and cavity, and weld tabs is put into the corresponding position of cavity and is flattened, then by high-frequency electrical
Road plate is put into cavity and guarantees smooth；Prepare a heating platform, temperature setting is 240 DEG C~250 DEG C, while by work
Dress, briquetting by cavity place with heating platform on, with guarantee high-frequency circuit board welding penetration rate, after soldering paste sufficiently melts,
Cavity is removed to be cooled to room temperature.
5. the production method of 80W power amplifier module according to claim 4, it is characterised in that: the step 3) weldering
It needs to clean high-frequency circuit board and cavity welding module after connecing.
6. the production method of 80W power amplifier module described in accordance with the claim 1, it is characterised in that: in the step 4)
It handles by dispensing machine equipment a soldering paste is carried out at the component pad on high-frequency circuit board；Tin cream is distinguished by dispenser
It is coated in for electric(al) insulator, RF isolation surrounding and cavity for electric(al) insulator, the sub- inner wall of the hole installing of RF isolation, and respectively will
Cavity is installed to for electric(al) insulator and RF isolation to correspond at mounting hole；Component is placed in the correspondence position of high-frequency circuit board
It sets；Prepare a heating platform, temperature setting is 205 DEG C~215 DEG C, after temperature reaches setting value, will post component
High-frequency circuit assembly be placed on heating platform, after the solder paste melts, group is removed from heating platform using proximity gloves
Part is cooled to room temperature；By electric iron temperature setting (350 ± 5) DEG C, will be welded to respectively for electric(al) insulator and RF isolation
On corresponding microstrip line.
7. the production method of 80W power amplifier module according to claim 6, it is characterised in that: after the step 4)
The high-frequency circuit board component of welding component component is placed in vapour phase cleaning machine and is cleaned, scavenging period 15~20 minutes.
8. according to the production method of the described in any item 80W power amplifier modules of claim 3 to 7, it is characterised in that: described
It carries out cutting weld tabs according to eutectic component shape made of the step 2) in step 5), by the weld tabs two sides cut and chamber
Internal welding surface brushes scaling powder, and being put into the corresponding position of cavity for weld tabs is flattened, eutectic component is then put into chamber
In vivo and guarantee smooth；Prepare a heating platform, temperature setting is 205 DEG C~215 DEG C, will after temperature reaches setting value
Component is placed on heating platform, after solder paste melts, component is removed from heating platform, is cooled to room temperature.
9. the production method of 80W power amplifier module described in accordance with the claim 1, it is characterised in that: in step 7), use spiral shell
Sub-miniature A connector is installed to cavity corresponding position by nail, and the cover board of module is fixed on cavity using screw, completes module cover dress
Match.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910193901.XA CN109769352B (en) | 2019-03-14 | 2019-03-14 | Manufacturing method of 80W power amplifier module |
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| CN201910193901.XA CN109769352B (en) | 2019-03-14 | 2019-03-14 | Manufacturing method of 80W power amplifier module |
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| CN109769352B CN109769352B (en) | 2021-12-24 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110381718A (en) * | 2019-08-01 | 2019-10-25 | 安徽华东光电技术研究所有限公司 | A kind of processing method for defending logical field earth station power amplifier module |
| CN110977072A (en) * | 2019-12-10 | 2020-04-10 | 安徽华东光电技术研究所有限公司 | Low-temperature sintering method of eutectic component |
| CN111132469A (en) * | 2019-11-28 | 2020-05-08 | 中国电子科技集团公司第十三研究所 | Interconnection design method and interconnection equipment for microwave substrate and coaxial connector |
| CN113441806A (en) * | 2021-04-27 | 2021-09-28 | 中国电子科技集团公司第十四研究所 | Collector ring electric brush welding device and method |
| CN116197477A (en) * | 2023-03-22 | 2023-06-02 | 北京中科飞鸿科技股份有限公司 | Method and device for assembling circuit board |
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| CN206362866U (en) * | 2016-12-26 | 2017-07-28 | 安徽华东光电技术研究所 | A kind of test fixture of L-band 80W power amplifier modules |
| CN107645849A (en) * | 2017-09-19 | 2018-01-30 | 安徽华东光电技术研究所 | A kind of preparation method of microwave excitation high-frequency model |
| CN109037881A (en) * | 2018-09-13 | 2018-12-18 | 安徽华东光电技术研究所有限公司 | The production method of 6 digit control attenuation module of satellite communication field |
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| CN206362866U (en) * | 2016-12-26 | 2017-07-28 | 安徽华东光电技术研究所 | A kind of test fixture of L-band 80W power amplifier modules |
| CN107645849A (en) * | 2017-09-19 | 2018-01-30 | 安徽华东光电技术研究所 | A kind of preparation method of microwave excitation high-frequency model |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110381718A (en) * | 2019-08-01 | 2019-10-25 | 安徽华东光电技术研究所有限公司 | A kind of processing method for defending logical field earth station power amplifier module |
| CN111132469A (en) * | 2019-11-28 | 2020-05-08 | 中国电子科技集团公司第十三研究所 | Interconnection design method and interconnection equipment for microwave substrate and coaxial connector |
| CN110977072A (en) * | 2019-12-10 | 2020-04-10 | 安徽华东光电技术研究所有限公司 | Low-temperature sintering method of eutectic component |
| CN113441806A (en) * | 2021-04-27 | 2021-09-28 | 中国电子科技集团公司第十四研究所 | Collector ring electric brush welding device and method |
| CN116197477A (en) * | 2023-03-22 | 2023-06-02 | 北京中科飞鸿科技股份有限公司 | Method and device for assembling circuit board |
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