CN109672410A - A kind of production method of Ka wave band frequency-variable module - Google Patents
A kind of production method of Ka wave band frequency-variable module Download PDFInfo
- Publication number
- CN109672410A CN109672410A CN201811560612.0A CN201811560612A CN109672410A CN 109672410 A CN109672410 A CN 109672410A CN 201811560612 A CN201811560612 A CN 201811560612A CN 109672410 A CN109672410 A CN 109672410A
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- welding
- wave band
- band frequency
- variable module
- production method
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000003466 welding Methods 0.000 claims abstract description 35
- 238000004140 cleaning Methods 0.000 claims abstract description 14
- 230000005496 eutectics Effects 0.000 claims abstract description 14
- 239000012212 insulator Substances 0.000 claims abstract description 9
- 238000002955 isolation Methods 0.000 claims description 10
- 238000010292 electrical insulation Methods 0.000 claims description 9
- 238000012360 testing method Methods 0.000 claims description 5
- 238000009434 installation Methods 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000004377 microelectronic Methods 0.000 abstract description 3
- 238000012536 packaging technology Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- 239000004615 ingredient Substances 0.000 description 5
- 239000000155 melt Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 4
- 230000002000 scavenging effect Effects 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 235000013351 cheese Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
Abstract
The invention discloses a kind of production methods of Ka wave band frequency-variable module, include the following steps: cleaning before structural member assembly；The welding of sleeve；The eutectic of chip welds；The welding of radio frequency circuit board and insulator；The welding of radio circuit component component；The welding of voltage regulator circuit component；Denso；Chip is glued；The gold wire bonding of chip；Capping.By adopting the above technical scheme, by microelectronics group packaging technology technology, a kind of production of Ka wave band frequency-variable module is realized.
Description
Technical field
The invention belongs to the technical fields of microwave amplifier, and in particular to a kind of production method of Ka wave band frequency-variable module.
Background technique
Since microwave monolithic integrated circuit (MMIC) circuit has, circuit loss is small, noise is low, bandwidth, dynamic range
Greatly, a series of advantages such as power is big, added efficiency is high, and reducible electronic equipment volume, weight saving, price are low etc.,
This plays Military Electronic Equipment and consumer electronic product particularly significant.
Microwave current monolithic integrated optical circuit (MMIC) has become the important branch of the various high-tech arms of current development, equipment
Column, and be widely used in various advanced tactical missiles, electronic warfare, communication system and various advanced phased-array radars.
Summary of the invention
It is an object of the present invention to provide a kind of production methods of Ka wave band frequency-variable module.
To achieve the goals above, the technical scheme adopted by the invention is as follows:
The production method of Ka wave band frequency-variable module of the invention, includes the following steps:
Cleaning before step 1, structural member assembly；
The welding of step 2, sleeve；
The eutectic welding of step 3, chip；
The welding of step 4, radio frequency circuit board and insulator；
The welding of step 5, radio circuit component component；
The welding of step 6, voltage regulator circuit component；
Step 7, Denso；
Step 8, chip are glued；
The gold wire bonding of step 9, chip；
Step 10, capping；
So far, Ka wave band frequency-variable module completes.
In the step 1, the structural member including shell, upper cover plate, lower cover plate is cleaned.
In the step 2, the welding, cleaning and simple test RF isolation for carrying out RF isolation and sleeve have
Without short circuit.
In the step 3, it is respectively completed between amplifier chip and amplifier carrier, mixer chip and frequency mixer
Eutectic weldering between carrier.
In the step 4, sleeve assembly and case weld, electrical insulation and case weld, radio circuit are carried out
Large-area welding between plate and shell.
In the step 5, the welding of radio circuit component component is carried out: the welding, complete including completing component
At the cleaning of component.
In the step 6, the welding of voltage regulator circuit component, the cleaning of voltage regulator circuit component are carried out.
In the step 7, cavity is installed to by voltage regulator circuit group 20；Carry out high temperature wire and electrical insulation
Manual welding.
In the step 8, the splicing of eutectic component is carried out.
In the step 10, electrical property debugging, the test of module are carried out；Complete the installation of lower cover plate, lower cover plate.
The present invention by adopting the above technical scheme, by microelectronics group packaging technology technology, realizes a kind of Ka wave band frequency conversion
The production of module.
Detailed description of the invention
Label in content and figure shown in attached drawing is briefly described as follows:
Fig. 1 is Ka wave band frequency-variable module outline structural diagram of the invention；
Fig. 2 is the cross-sectional view of the overlook direction of structure shown in Fig. 1；
Fig. 3 is amplifier carrier structure schematic diagram of the invention；
Fig. 4 is prime amplification chip carrier structure schematic diagram of the invention；
Fig. 5 is frequency mixer carrier structure schematic diagram of the invention；
Fig. 6 is final amplifier carrier structure schematic diagram of the invention；
Fig. 7 is attenuator carrier structure schematic diagram of the invention；
Fig. 8 is Ka wave band frequency-variable module high-frequency circuit assembling schematic diagram of the invention；
Fig. 9 is Ka wave band frequency-variable module high-frequency circuit components and parts assembling schematic diagram of the invention；
Figure 10 is Ka wave band frequency-variable module voltage regulator circuit components and parts assembling schematic diagram of the invention；
Figure 11 is Ka wave band frequency-variable module gold wire bonding assembling schematic diagram of the invention；
Figure 12 is Ka wave band frequency-variable module back side assembling schematic diagram of the invention；
Figure 13 is Ka wave band frequency-variable module upper cover plate structural schematic diagram of the invention；
Figure 14 is Ka wave band frequency-variable module lower cover plate structural schematic diagram of the invention.
In the figure, it is marked as
1, amplifier carrier, 2, chip capacity 47p, 3, amplifier chip, 4, prime amplification chip carrier, 5, chip capacity
1000p, 6, pre-amplifier chip, 7, frequency mixer carrier, 8, mixer chip, 9, final amplifier carrier, 10, final stage amplification
Device chip, 11, chip capacity 100p, 12, attenuator carrier, 13, attenuator chip, 14, sleeve assembly, 15, electrical insulation,
16, radio frequency circuit board, 17, RF isolation, 18, shell, 19, for electric(al) insulator, 20, voltage regulator circuit component, 21, screw, 22,
Upper cover plate, 23, lower cover plate.
Specific embodiment
Below against attached drawing, by the description of the embodiment, making to a specific embodiment of the invention further details of
Illustrate, to help those skilled in the art to have more complete, accurate and deep reason to inventive concept of the invention, technical solution
Solution.
The structure of the invention as expressed by Fig. 8 is a kind of Ka wave band frequency-variable module.Production method, introduction of the present invention
A kind of production method of the Ka wave band frequency-variable module based on the design of mmic amplifier chip.This method is encapsulated by microelectronics group
Technology realizes a kind of production of Ka wave band frequency-variable module.
In order to realize a kind of goal of the invention for the production method for providing Ka wave band frequency-variable module, the technical side that the present invention takes
Case are as follows:
As shown in figs. 1 to 14, the production method of Ka wave band frequency-variable module of the invention, includes the following steps:
Cleaning before step 1, structural member assembly:
Structural member to Ka wave band frequency-variable module includes that the structural members such as shell, upper cover plate, lower cover plate clean.
The structural members such as above-mentioned shell, upper cover plate, lower cover plate are placed in vapour phase cleaning machine and are cleaned, scavenging period 10~
15 minutes.
The welding of step 2, sleeve:
1, sleeve inner is filled up into 290 DEG C of golden tinols；
2, the sleeve that the sub 17 high frequency insulators insertion of RF isolation is filled up to golden tinol, places eutectic platform and is sintered,
Sleeve assembly 14 is made；
3, after the completion of self-test inspection sintering sub 17 sleeve assemblies of RF isolation length (6.5+0.03) mm, after passed examination
Sleeve assembly 14 is placed, is used when waiting subsequent module assembly.
The eutectic welding of step 3, chip:
1, the weld tabs that fusing point is Au80Sn20 for 280 DEG C, ingredient is selected, the big of required weld tabs is cut according to the size of chip
It is small；
2, it is 300~310 DEG C by the temperature setting of eutectic platform, carrier is fixed on eutectic platform, is completed under the microscope
Eutectic welding such as Fig. 3 to Fig. 7 between chip, capacitor and carrier；
3, the chip assembly after eutectic is placed in spare in gel box.
The sintering of step 4, radio frequency circuit board and insulator:
1, the solder(ing) paste that fusing point is Sn96.5Ag3Cu0.5 for 217 DEG C of ingredients is selected, applies tin cream respectively by dispenser
In electrical insulation 15, for electric(al) insulator 19 and sleeve assembly 14 around, and according to shown in Fig. 8 respectively by electrical insulation 15,
It is installed on shell 18 and is corresponded at mounting hole for electric(al) insulator 19 and sleeve assembly 14；
2, welding resistance adhesive tape is sticked on 16 surface of radio frequency circuit board, selects with a thickness of 0.05mm, 217 DEG C of fusing point, ingredient are
The weld tabs of Sn96.5Ag3Cu0.5 is cut according to the shape of radio circuit, will be in the weld tabs two sides that cut and shell
Welding surface brushes scaling powder, and being put into the corresponding position of shell 18 for weld tabs is flattened, is then put into radio frequency circuit board 16
In shell 18 and guarantee smooth；
3, prepare a heating platform, temperature setting is 250 DEG C~260 DEG C, while shell 18 is put by tooling, briquetting
It sets on heating platform, removes shell after soldering paste sufficiently melts with the penetration rate for guaranteeing that radio frequency circuit board 16 welds and be cooled to
Room temperature；
4,18 component of shell being welded is placed in vapour phase cleaning machine and is cleaned, scavenging period 15~20 minutes, to have
Effect removal scaling powder；
5, using multimeter detection electrical insulation 15 and sleeve assembly 14, whether there is short circuit.
The welding of step 5, radio circuit component component:
1, the solder(ing) paste that fusing point is Pb37Sn63 for 183 DEG C, ingredient is selected, by dispensing machine equipment to radio circuit component
In radio frequency circuit board 16 above component pad at carry out the processing of soldering paste；Tin cream is coated in RF isolation by dispenser
Around son 17, and RF isolation 17 is installed at the corresponding mounting hole of shell 18；
2, according to Fig. 8, the component that C1, C2, C3, C4, C5, N1, N2 are indicated on drawing is placed in radio circuit one by one
On the corresponding position of plate 16；
3, prepare a heating platform, temperature setting is 220 DEG C~230 DEG C, after temperature reaches setting value, will post member
The radio circuit component of device is entirely placed on heating platform, after solder paste melts, takes proximity gloves from heated flat
Radio circuit component is entirely removed on platform；
4, radio circuit component is placed in vapour phase cleaning machine and is cleaned, scavenging period 10~15 minutes, to effectively remove
The remaining scaling powder of solder paste melts；
5, using the position, in the right direction of microscopic examination component installation, put it is smooth, placed in the middle, there is not allowed that set up a monument,
Tin connection, rosin joint；Radio circuit component is placed after passed examination, is used when waiting subsequent module assembly.
The welding of step 6, voltage regulator circuit component:
1, the solder(ing) paste that fusing point is Pb37Sn63 for 183 DEG C, ingredient is selected, by dispensing machine equipment on voltage regulator circuit plate
A soldering paste processing is carried out at the component pad in face；
2, according to Figure 10, will be indicated on drawing C6, C7, C8, C9, C10, C11, C12, R1, R2, R3, R4, R5, R6, R7,
The component of R8, R9, R10, R11, R12, M1 are placed in one by one on the corresponding position of voltage regulator circuit plate；
3, prepare a heating platform, temperature setting is 210 DEG C~220 DEG C, after temperature reaches setting value, will post member
The voltage regulator circuit component 20 of device is entirely placed on heating platform, after solder paste melts, takes proximity gloves from heating
Voltage regulator circuit component (20) are entirely removed on platform；
4, voltage regulator circuit component 20 is placed in vapour phase cleaning machine and is cleaned, scavenging period 10~15 minutes, effectively to go
Except the remaining scaling powder of solder paste melts；
5, using the position, in the right direction of microscopic examination component installation, put it is smooth, placed in the middle, there is not allowed that set up a monument,
Tin connection, rosin joint；Voltage regulator circuit component 20 is placed after passed examination, is used when waiting subsequent module assembly.
Step 7, Denso:
20 benefit of voltage regulator circuit component completed in step 6 is attached by screws to 18 back side of shell and is fastened, according to Figure 12
The welding between electrical insulation 15 and RF isolation 17 and voltage regulator circuit is completed in instruction；It is cleared up after the completion with alcohol swab
Pad, it is ensured that inner clean is pollution-free.
Step 8, chip are glued:
The eutectic component corresponding diagram completed in step 3 is completed using conductive adhesive technique using dispenser according to Fig. 8
The cementing work that the position of U1, U2, U3, U4, U5, U6, U7 are indicated on paper, is put into baking oven and is solidified, oven temperature: 120
~130 DEG C, curing time: 1~1.5 hour.
Step 9, gold wire bonding:
1, according to Figure 11, amplifier chip 3, pre-amplifier chip 6, final amplifier chip 10, attenuator core are completed
The wire bonding of piece 13, mixer chip 8 and chip capacity；
2, it checks, using multimeter detection circuit, whether there is short circuit；Whether there is damage using microexamination chip.
Step 10, capping:
The upper cover plate 22 of module, lower cover plate 22 are fixed on shell 18 using screw 21, complete module cover assembly.Spiral shell
Nail 21 is stainless steel cheese head screw M1.6 × 4.
So far, Ka wave band frequency-variable module completes.
The present invention is exemplarily described above in conjunction with attached drawing, it is clear that the present invention implements not by aforesaid way
Limitation, as long as the improvement for the various unsubstantialities that the inventive concept and technical scheme of the present invention carry out is used, or without changing
It is within the scope of the present invention into the conception and technical scheme of the invention are directly applied to other occasions.
Claims (10)
1. a kind of production method of Ka wave band frequency-variable module, it is characterised in that: the production method includes the following steps:
Cleaning before step 1, structural member assembly；
The welding of step 2, sleeve；
The eutectic welding of step 3, chip；
The welding of step 4, radio frequency circuit board and insulator；
The welding of step 5, radio circuit component component；
The welding of step 6, voltage regulator circuit component；
Step 7, Denso；
Step 8, chip are glued；
The gold wire bonding of step 9, chip；
Step 10, capping；
So far, Ka wave band frequency-variable module completes.
2. the production method of Ka wave band frequency-variable module described in accordance with the claim 1, it is characterised in that: in the step 1,
Structural member including shell (18), upper cover plate (22), lower cover plate (23) is cleaned.
3. the production method of Ka wave band frequency-variable module described in accordance with the claim 1, it is characterised in that: in the step 2,
Carry out the welding, cleaning and sub (17) high-frequency insulation of simple test RF isolation of sub (17) high frequency insulator of RF isolation and sleeve
Whether there is short circuit for son.
4. the production method of Ka wave band frequency-variable module described in accordance with the claim 1, it is characterised in that: in the step 3,
It is respectively completed between amplifier chip (3) and amplifier carrier (1), mixer chip (8) and frequency mixer carrier (7) chip, electricity
The eutectic held between carrier welds.
5. the production method of Ka wave band frequency-variable module described in accordance with the claim 1, it is characterised in that: in the step 4,
Carry out sleeve assembly and case weld, electrical insulation (15) and shell (18) welding, radio frequency circuit board (16) and shell (18)
Between large-area welding.
6. the production method of Ka wave band frequency-variable module described in accordance with the claim 1, it is characterised in that: in the step 5,
Carry out the welding of radio circuit component component: including completing the welding of component, completing the cleaning of component.
7. the production method of Ka wave band frequency-variable module described in accordance with the claim 1, it is characterised in that: in the step 6,
Carry out the welding of voltage regulator circuit component, the cleaning of voltage regulator circuit component (20).
8. the production method of Ka wave band frequency-variable module described in accordance with the claim 1, it is characterised in that: in the step 7,
Voltage regulator circuit group (20) part is installed to cavity；Carry out the manual welding of high temperature wire and electrical insulation (15).
9. the production method of Ka wave band frequency-variable module described in accordance with the claim 1, it is characterised in that: in the step 8,
Carry out the splicing of eutectic component.
10. the production method of Ka wave band frequency-variable module described in accordance with the claim 1, it is characterised in that: in the step 10
In, carry out electrical property debugging, the test of module；Complete the installation of lower cover plate (22), lower cover plate (23).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811560612.0A CN109672410B (en) | 2018-12-20 | 2018-12-20 | Manufacturing method of Ka-band frequency conversion module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811560612.0A CN109672410B (en) | 2018-12-20 | 2018-12-20 | Manufacturing method of Ka-band frequency conversion module |
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| Publication Number | Publication Date |
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| CN109672410A true CN109672410A (en) | 2019-04-23 |
| CN109672410B CN109672410B (en) | 2024-04-09 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110856373A (en) * | 2019-11-22 | 2020-02-28 | 安徽华东光电技术研究所有限公司 | Excitation signal module processing method |
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| CN109672410B (en) | 2024-04-09 |
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