CN106572607A - Process manufacturing method of solid-state microwave source - Google Patents

Process manufacturing method of solid-state microwave source Download PDF

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Publication number
CN106572607A
CN106572607A CN201610459504.9A CN201610459504A CN106572607A CN 106572607 A CN106572607 A CN 106572607A CN 201610459504 A CN201610459504 A CN 201610459504A CN 106572607 A CN106572607 A CN 106572607A
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China
Prior art keywords
component
circuit
amplifier
solid state
voltage regulator
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CN201610459504.9A
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CN106572607B (en
Inventor
何宏玉
聂庆燕
周宗明
李明
汪宁
程玮
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Anhui East China Institute of Optoelectronic Technology
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Anhui Huadong Polytechnic Institute
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341Surface mounted components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1131Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

A process manufacturing method of a solid-state microwave source comprises the following steps: step 1: manufacturing an insulator assembly; step 2: manufacturing a power circuit component and a modulation circuit component; and step 3: manufacturing an amplifier circuit assembly and a voltage stabilizer circuit assembly; and 4, step 4: manufacturing an oscillation filter circuit assembly; and 5: manufacturing an amplifier circuit sintering assembly; step 6: gluing the voltage stabilizer circuit component; and 7: bonding with gold wires; and 8: mounting; and step 9: debugging, testing, capping, painting and marking. The manufacturing process has high stability and quality consistency, and can meet the small-batch supply requirements of users. After multiple tests and process groping, 10 products in two batches produced by the process method are tested after environmental tests such as temperature shock, vibration, acceleration and the like, all technical performance indexes completely meet the requirements of the whole machine, and the manufacturing process is simple in flow, small in equipment investment and suitable for small-batch production.

Description

A kind of manufacturing process of solid state microwave sources
Technical field
The present invention relates to a kind of manufacture method of microwave source module, and in particular to a kind of fabrication and processing side of solid state microwave sources Method, belongs to the technical field of microwave source module making processing technique.
Background technology
The solid state microwave product-derived is the radio detection signal for producing influence fuse in certain model missile-borne radar, and Local oscillation signal is provided for fuse receiver mixer.
It is not only very high to environmental suitability requirement because the product belongs to the product applied on missile-borne radar, while also Require the features such as product has low-power consumption, high-output power, low phase noise, broadband, high reliability.
Therefore the stability and quality conformance requirement to processing technology is also very high, also to meet user's small lot supply of material need Ask.Grope through test of many times and technique, and two batches, 10 products produced with this process, and through temperature punching Hit, vibrate, being tested after the environmental test such as acceleration, every technical performance index fully meets machine requirement, and this makes Make technological process simple, equipment investment is little, be suitable for small lot batch manufacture.
The content of the invention
According to above-mentioned requirements, the purpose of the invention is to provide a kind of manufacturing process of solid state microwave sources, with full The stability and quality conformance of sufficient processing technology and user's small lot supply of material demand.
For achieving the above object, the invention is realized by following technological means:
A kind of manufacturing process of solid state microwave sources, it is characterised in that:Comprise the following steps:
Step 1:Insulator assembly makes;
Step 2:Power circuit components, modulation circuit establishment of component;
Step 3:Amp circuit package, voltage regulator circuit establishment of component;
Step 4:Oscillation filter circuit unit makes;
Step 5:Amplifier circuit sintered components make;
Step 6:Voltage regulator circuit component is glued;
Step 7:Gold wire bonding;
Step 8:Denso;
Step 9:Debugging, test, capping, spray painting and mark.
Further:
Described step 1:Insulator assembly makes to be included:
It 1.1 is cleaned by ultrasonic:Isolator and inner wire are cleaned by ultrasonic 10 ± 1 minutes, frequency is adjusted to 28KHz power 60w, from So dry;
1.2 isolators are assembled with inner wire:290 DEG C of golden tinol will be filled up inside inner wire inner core, isolator will Insertion is filled up in the inner wire inner core of golden tinol, and isolator upper surface and inner wire lower surface are kept at a distance as 7.7mm, Then the isolator for assembling and inner wire are placed on eutectic platform and are sintered, after completing welding, naturally cooled to 22~25 DEG C.
Described step 2:Power circuit components, modulation circuit establishment of component include:
2.1 respectively at power supply circuit board, the place to be welded of modulation circuit plate, is 183 DEG C with fusing point on pneumatic point gum machine point SN63CR32 soldering paste, and stabilivolt and resistance, capacitance component are placed at soldering paste, then place it in 200 DEG C of heating It is sintered on platform;After completing welding, box body is placed on dust-free paper and naturally cools to 22~25 DEG C;
2.2 cleaning
Complete the power supply circuit board of welding, modulation circuit plate to step 2.1 to clean.
Described step 3:Amp circuit package, voltage regulator circuit establishment of component include:
3.1 respectively put amplifier circuit board and amplifier circuit board supporting plate, voltage regulator circuit plate and voltage regulator circuit plate supporting plate In entering to fill the culture dish of dehydrated alcohol, afterwards with being cleaned by ultrasonic;
Amplifier circuit board, voltage regulator circuit back are used the ALPHA OM338 soldering paste print that fusing point is 217 DEG C by 3.2 respectively After brush, it is mounted respectively to amplifier circuit board supporting plate, voltage regulator circuit plate support and pulls, places 230 DEG C of heating platforms and be sintered;
3.3 respectively by amplifier circuit board electric capacity to be welded and resistance position, the voltage regulator circuit plate electric capacity to be welded after sintering 183 DEG C of soldering paste are smeared at place, then install electric capacity and resistance, then respectively by the amp circuit package of installation, manostat electricity Road component is placed on 200 DEG C of heating platforms and is sintered, and after completing welding, places it in and naturally cool on filter paper 22~25 ℃;
3.4. cleaning.
Described step 4:Oscillation filter circuit unit makes to be included:
4.1 print solid state microwave sources cavity, insulator, insulating microwave sub-component, pierce circuit printed board, filter circuit Plate is cleaned by ultrasonic 10 ± 1 minutes, and frequency is adjusted to 28KHz power 60w, dries naturally;
4.2 point gum machines adopt continuity point rubber moulding formula, respectively in the cavity inner wall and insulating microwave sub-component of insulating microwave sub-component Spot printing one encloses 217 DEG C of ALPHA OM338 soldering paste on the outside of outside and insulator;Subsequently insulating microwave sub-component, insulator are inserted Enter in solid state microwave sources cavity, point gum machine pressure is set to 45-60psi;
Oven temperature is set to 150 ± 5 DEG C by 4.3, will install the solid state microwave sources cavity of insulating microwave sub-component and insulator Place in baking oven, dry 5 ± 1 minutes;It is 250 ± 5 DEG C DEG C by heating platform temperature setting, takes out the solid state microwave sources cavity being baked The quick heating platform for placing 250 ± 5 DEG C DEG C is welded, and when tin cream starts to melt, with tweezers insulating microwave sub-component is stirred With insulator, make soldering paste fully flow, after the completion of welding, cavity is removed from heating platform, be placed on natural cooling on filter paper;
Pierce circuit plate, Rogers plates, filter circuit back are printed 183 DEG C of solder(ing) pastes by 4.4, are attached to solid state microwave On source chamber body position;And at components and parts to be welded on pierce circuit plate 183 DEG C of solder(ing) pastes of spot printing, components and parts are placed on into weldering At cream;By install pierce circuit plate, Rogers plates, filter circuit plate cavity be placed on 150 ± 5 DEG C of warm table in advance Heat, then be placed on 210 ± 5 DEG C of warm tables and welded, after completing welding, it is placed on filter paper and naturally cools to 22~25 ℃。
4.5 cleaning.
Described step 5:Amplifier circuit sintered components make to be included:
5.1 amplifier eutectic establishment of component
80Au20Sn solder sheets, carrier are cleaned by ultrasonic, after carrier is fixed on warm table with 295 ± 5 DEG C of preheating temperatures, when Between be no less than 5s;The solder sheet of well cutting is positioned over into the position to be welded of carrier;Subsequently with tweezers solder sheet is spread out rapidly, spread The solder area opened is slightly larger than chip area to be welded, and removes linen welding flux slag;Respectively with tweezers gripping amplifier chip, Attenuator chip and chip capacity rub and press in solder surface, and the actual fraction time of each chip is controlled in 13s-25s;And Guarantee that chip to be welded and carrier are in close contact during friction, after by chip positioning,;Remove eutectic component and be placed on having with lid 22~25 DEG C are cooled in the culture dish of filter paper substrate;
5.2. amp circuit package is placed under microscope, position point gum machine to be sintered is uniformly coated into one layer 183 DEG C Soldering paste, be put into position to be welded by amplifier eutectic component is smooth, and by the bonding welding pad of amplifier eutectic device wafer with Band wire centering;Oven temperature is set to into 150 ± 5 DEG C, amp circuit package to be sintered and amplifier eutectic group is placed Part dries 5 ± 1 minutes in baking oven;It is by heating platform temperature setting(190±5)DEG C, take out the component being baked and quickly place Welded in 190 ± 5 DEG C of thermal station, when tin cream starts to melt, carried out with tweezers gripping amplifier eutectic device wafer component Rub and press, actual fraction time is controlled in 13s-25s;And guarantee that chip carrier is in close contact with bottom bracket during friction, By the bonding welding pad of amplifier eutectic device wafer and microstrip line centering, the component for sintering is removed into placement filter paper from thermal station cold But to 22~25 DEG C;
5.3 cleaning.
Described step 6:Voltage regulator circuit component is glued and includes:
The EPO-TEKH20E of thin layer will be smeared at cementing HR78C05, HR78C09 voltage stabilizing chip in voltage regulator circuit component Conducting resinl, is placed on and is treated cementing place with tweezers gripping HR78C05, HR78C09 voltage stabilizing chip respectively, then by cementing HR78C05, The voltage regulator circuit component of HR78C09 voltage stabilizing chips is put in baking oven and is solidified, and solidification temperature is 120 ± 1 DEG C, 60 ± 1 points of time Clock, takes out from baking oven, to place and naturally cool to 22~25 DEG C on filter paper.
Described step 7:Gold wire bonding includes:
Voltage regulator circuit component after splicing, amplifier circuit sintered components are placed on warm table, heating platform temperature sets Standby is 100 ± 5 DEG C, with 25.4 μm of spun golds, is bonded, and after bonding terminates, voltage regulator circuit component, amplifier circuit is sintered Component is removed to be placed on filter paper from warm table and is cooled to 22~25 DEG C.
Described step 8:Denso includes:Amplifier circuit is bonded into component, voltage regulator circuit bonding component, power circuit Component, the assembling of modulation circuit component, with rustless steel cross recess M1.6 × 4 cheese head screw, will assemble each component of all-in-one-piece and install In oscillation filter circuit unit, then by each component circuit board Copper Foil welding be connected to together, after insulator is linked with substrate, Finally with alcohol swab by welding region wiped clean.
Described step 2.2,3.4,4.5,5.3 are:
1)Cleaned using vapour phase cleaning machine, the ABZOL CEG CLEANER cleanings for filling 60 DEG C will be placed on cleaning circuit plate Hot brew 20 ± 1 minutes in the rinse bath of agent;
2)Take out step 1)In circuit board be placed in the culture dish for filling 60 DEG C of dehydrated alcohol and scrubbed, substrate surface makes Scrubbed with yellow fur brush, circuit board element surrounding gap carries out scrub 5 ± 1 minutes using yellowish pink scrub-brush;
3)Toast 5 ± 1 minutes in the baking oven that circuit board is placed again 50 DEG C, naturally cool to 22~25 DEG C.
The beneficial effect of the invention is:The stability of processing technology of the present invention and quality conformance are high, can meet User's small lot supply of material demand.Grope through test of many times and technique, and produced with two batches 10 of this process production Product, and tested after the environmental tests such as temperature shock, vibration, acceleration, every technical performance index fully meets Machine requirement, and this fabrication processing is simple, equipment investment is little, is suitable for small lot batch manufacture.
Description of the drawings
Fig. 1 insulator assembly composition schematic diagrams, Fig. 2 power circuit components composition schematic diagrams, Fig. 3 modulation circuits component composition Schematic diagram, Fig. 4 amp circuit packages, Fig. 5 voltage regulator circuit components, Fig. 6 oscillation filter circuit units, Fig. 7 amplifier eutectics Component, Fig. 8 amplifier circuit sintered components, Fig. 9 voltage regulator circuits are glued component, Figure 10 voltage regulator circuits bonding component, Figure 11 Amplifier circuit bonding component, the component after Figure 12 Densos, wherein, a is a face view, and b is the rear view of a.
Specific embodiment
Below in conjunction with Figure of description, the invention is further described.
Step 1:Insulator assembly makes:
As shown in Figure 1, isolator 101 is cleaned by ultrasonic with inner wire 102(10±1)Minute, frequency is adjusted to 1 lattice, from So dry(Ultrasonic cleaning in later step is identical).290 DEG C of golden tinol, isolator will be filled up inside inner wire inner core Insertion is filled up in the inner wire inner core of golden tinol, isolator upper surface and inner wire lower surface keep at a distance for 7.7mm, then the isolator for assembling and inner wire are placed on eutectic platform be sintered, natural after completing welding It is cooled to 22~25 DEG C.
Step 2:Power circuit components, modulation circuit establishment of component:
2.1 as shown in Figure 2 and Figure 3, respectively at power supply circuit board, the place to be welded of modulation circuit plate, is melted with pneumatic point gum machine point Point is 183 DEG C of SN63CR32 soldering paste, and stabilivolt W3 and resistance, capacitance component are placed at soldering paste, is then put Put and be sintered on 200 DEG C of heating platforms.After completing welding, box body is placed on dust-free paper and is naturally cooled to(22~25) ℃。
2.2 cleaning
1)Cleaned using vapour phase cleaning machine, circuit board is placed on the cleaning for filling 60 DEG C of ABZOL CEG CLEANER abluents Hot brew in groove(20±1)Minute;
2)Place after taking-up and scrubbed in the culture dish for filling 60 DEG C of dehydrated alcohol, substrate surface uses yellow fur brush brush Wash, circuit board element surrounding gap is scrubbed using yellowish pink scrub-brush(5±1)Minute;
3)Toast in the baking oven that circuit board is placed again 50 DEG C(5±1)Minute, naturally cool to(22~25)It is stand-by after DEG C.
Step 3:Amp circuit package, voltage regulator circuit establishment of component
3.1 as shown in Figure 4, Figure 5, is respectively put into amplifier circuit board 401 and supporting plate 402, voltage regulator circuit plate and supporting plate 402 In filling the culture dish of dehydrated alcohol, afterwards with ultrasonic cleaning(Cleaning in step same 1.1).
Amplifier circuit board 401, the back side of voltage regulator circuit plate 501 are used the ALPHA that fusing point is 217 DEG C by 3.2 respectively After OM338 Solder-Paste Printings, it is mounted respectively to supporting plate 401, support and pulls on 502, places 230 DEG C of heating platforms and be sintered.
At 3.3 amplifier circuit board R7, C10, C11 positions respectively after sintering, voltage regulator circuit plate electric capacity to be welded 183 DEG C of soldering paste are smeared, according to shown in circuit Fig. 4, Fig. 5, electric capacity and resistance is installed.Again respectively by the amplifier circuit of installation Component, voltage regulator circuit component are placed on 200 DEG C of heating platforms and are sintered, and after completing welding, place it on filter paper certainly So it is cooled to(22~25)℃.
3.4. cleaning(With 2.2)
Step 4:Oscillation filter circuit unit makes
As shown in fig. 6,
4.1 by solid state microwave sources cavity 603, insulator 601, insulating microwave sub-component 602, pierce circuit printed board 604, filter Ripple device circuit printing plate 606 is cleaned by ultrasonic.
4.2 point gum machines adopt continuity point rubber moulding formula, respectively in the cavity inner wall and isolator of insulating microwave sub-component Spot printing one encloses 217 DEG C of ALPHA OM338 soldering paste on the outside of component outside and insulator;Subsequently by insulating microwave sub-component 602, insulation Son 601 is inserted in cavity 603, and point gum machine pressure is set to(45-60)psi.
4.3 are set to oven temperature(150±5)DEG C, the cavity of insulating microwave sub-component 602 and insulator will be installed 603 place in baking oven, dry(5±1)Minute.It is by heating platform temperature setting(250±5℃)DEG C, take out the cavity being baked fast Speed is placed(250±5℃)DEG C heating platform welded, tin cream start melt when, stir insulating microwave sub-component with tweezers 602 with insulator 601, make soldering paste fully flow.After the completion of welding, cavity is removed from heating platform, be placed on filter paper certainly So cooling.
Pierce circuit plate 604 and Rogers plates 605, the back side of filter circuit plate 606 are printed 183 DEG C of solder(ing) pastes by 4.4, It is attached on cavity Fig. 6 positions;And at components and parts to be welded on pierce circuit plate 604 183 DEG C of solder(ing) pastes of spot printing, by first device Part is placed at soldering paste;Place it in(150±5℃)Warm table on preheat, then be placed on(210±5℃)Warm table is enterprising Row welding.After completing welding, it is placed on filter paper and naturally cools to(22~25)℃.
4.5 cleaning(With 2.2)
Step 5:Amplifier circuit sintered components make
5.1 amplifier eutectic establishment of component
80Au20Sn solder sheets, carrier are cleaned by ultrasonic(With 1.1), after carrier is fixed on warm table(295±5)It is DEG C pre- Heat, the time is no less than 5s;The solder sheet of well cutting is positioned over into the position to be welded of carrier;Subsequently with tweezers solder sheet is spread rapidly Open, the solder area for spreading out is slightly larger than chip area, and removes linen welding flux slag;Grip amplifier chip with tweezers respectively A1 models TGA2700, attenuator chip AT1 and chip capacity C8, C9 rub and press in solder surface, each chip reality Fraction time is controlled in 13s-25s;And guarantee that chip and carrier are in close contact during friction, after by chip positioning, see Fig. 7;Remove Eutectic component is placed on the culture dish with lid(There is filter paper substrate)In be cooled to(22~25)℃.5.2. by amplifier electricity Road component 801 is placed under microscope, and position point gum machine to be sintered is uniformly coated one layer 183 DEG C of soldering paste according to Fig. 8.Press According to Fig. 8 position to be welded is put into by amplifier eutectic component 802 is smooth, and by the bonding welding pad of chip and band wire centering.To dry Case temperature setting is(150±5)DEG C, component to be sintered is placed in baking oven, dry(5±1)Minute.By heating platform temperature It is set to(190±5)DEG C, take out the component being baked and quickly place(190±5)DEG C thermal station on welded, tin cream starts to melt During change, rubbed and pressed with tweezers gripping chip assembly, actual fraction time is controlled in 13s-25s;And when guaranteeing friction Chip carrier is in close contact with bottom bracket, will be with microstrip line centering by the bonding welding pad of chip.By the component for sintering from heat Platform is removed placement filter paper and is cooled to(22~25)℃.
5.3 cleaning(With 2.2)
Step 6:Voltage regulator circuit component is glued
The EPO-TEKH20E conducting resinls of thin layer will be smeared at W1, W2 in Fig. 9, respectively with tweezers gripping chip HR78C05, HR78C09 places W1 in fig .9, at W2.It is placed into again solidifying in baking oven, solidification temperature is(120±1)DEG C, the time(60± 1)Minute.Take out from baking oven, place and naturally cooled on filter paper(22~25)℃.
Step 7:Gold wire bonding
Component after splicing is placed on warm table.Heating platform temperature device is(100±5)DEG C, according still further to Figure 10,11 The instruction put is bonded with 25.4 μm of spun golds 1001.After bonding terminates, component is removed from warm table and is placed on filter paper It is cooled to(22~25)℃.
Step 8:Denso
By amplifier circuit bonding component 1202, voltage regulator circuit bonding component 1204, power circuit components 1205, modulation circuit Component 1206 is assembled, and component as shown in Figure 12, with rustless steel cross recess M1.6 × 4 round end spiral shell, 1203, is installed in after Denso In oscillation filter circuit unit.The welding of circuit board-use copper-clad is connected to together again.Insulator is linked with substrate afterwards.Finally use wine Smart cotton is by welding region wiped clean.
Step 9:Debug, test, cover, paint and mark, so far production is completed.
The ultimate principle, principal character and advantage of the invention has been shown and described above.The technical staff of the industry It should be appreciated that the design is not restricted to the described embodiments, the simply explanation the design described in above-described embodiment and description Principle, on the premise of without departing from the design spirit and scope, the invention also has various changes and modifications, these change Change and improve and both fall within the range of claimed the design.The claimed scope of the invention is by appending claims And its equivalent thereof.

Claims (10)

1. a kind of manufacturing process of solid state microwave sources, it is characterised in that:Comprise the following steps:
Step 1:Insulator assembly makes;
Step 2:Power circuit components, modulation circuit establishment of component;
Step 3:Amp circuit package, voltage regulator circuit establishment of component;
Step 4:Oscillation filter circuit unit makes;
Step 5:Amplifier circuit sintered components make;
Step 6:Voltage regulator circuit component is glued;
Step 7:Gold wire bonding;
Step 8:Denso;
Step 9:Debugging, test, capping, spray painting and mark.
2. a kind of manufacturing process of solid state microwave sources as claimed in claim 1, it is characterised in that:Described step 1:Absolutely Edge sub-component makes to be included:
It 1.1 is cleaned by ultrasonic:Isolator and inner wire are cleaned by ultrasonic 10 ± 1 minutes, frequency is adjusted to 28KHz power 60w, from So dry;
1.2 isolators are assembled with inner wire:290 DEG C of golden tinol will be filled up inside inner wire inner core, by isolator Insertion fills up the inner wire inner core of golden tinol, and isolator upper surface and inner wire lower surface are kept at a distance as 7.7mm, so The isolator for assembling and inner wire are placed on eutectic platform are afterwards sintered, after completing welding, naturally cool to 22 ~25 DEG C.
3. a kind of manufacturing process of solid state microwave sources as claimed in claim 1, it is characterised in that:Described step 2:Electricity Source circuit component, modulation circuit establishment of component include:
2.1 respectively at power supply circuit board, the place to be welded of modulation circuit plate, is 183 DEG C with fusing point on pneumatic point gum machine point SN63CR32 soldering paste, and stabilivolt and resistance, capacitance component are placed at soldering paste, then place it in 200 DEG C of heating It is sintered on platform;After completing welding, box body is placed on dust-free paper and naturally cools to 22~25 DEG C;
2.2 cleaning
Complete the power supply circuit board of welding, modulation circuit plate to step 2.1 to clean.
4. a kind of manufacturing process of solid state microwave sources as claimed in claim 1, it is characterised in that:Described step 3:Put Big device circuit unit, voltage regulator circuit establishment of component include:
3.1 respectively put amplifier circuit board and amplifier circuit board supporting plate, voltage regulator circuit plate and voltage regulator circuit plate supporting plate In entering to fill the culture dish of dehydrated alcohol, afterwards with being cleaned by ultrasonic;
Amplifier circuit board, voltage regulator circuit back are used the ALPHA OM338 soldering paste print that fusing point is 217 DEG C by 3.2 respectively After brush, it is mounted respectively to amplifier circuit board supporting plate, voltage regulator circuit plate support and pulls, places 230 DEG C of heating platforms and be sintered;
3.3 respectively by amplifier circuit board electric capacity to be welded and resistance position, the voltage regulator circuit plate electric capacity to be welded after sintering 183 DEG C of soldering paste are smeared at place, then install electric capacity and resistance, then respectively by the amp circuit package of installation, manostat electricity Road component is placed on 200 DEG C of heating platforms and is sintered, and after completing welding, places it in and naturally cool on filter paper 22~25 ℃;
3.4. cleaning.
5. a kind of manufacturing process of solid state microwave sources as claimed in claim 1, it is characterised in that:Described step 4:Shake Swinging filter circuit establishment of component includes:
4.1 print solid state microwave sources cavity, insulator, insulating microwave sub-component, pierce circuit printed board, filter circuit Plate is cleaned by ultrasonic 10 ± 1 minutes, and frequency is adjusted to 28KHz, power 60w, dries naturally;
4.2 point gum machines adopt continuity point rubber moulding formula, respectively in the cavity inner wall and insulating microwave sub-component of insulating microwave sub-component Spot printing one encloses 217 DEG C of ALPHA OM338 soldering paste on the outside of outside and insulator;Subsequently insulating microwave sub-component, insulator are inserted Enter in solid state microwave sources cavity, point gum machine pressure is set to 45-60psi;
Oven temperature is set to 150 ± 5 DEG C by 4.3, will install the solid state microwave sources cavity of insulating microwave sub-component and insulator Place in baking oven, dry 5 ± 1 minutes;It is 250 ± 5 DEG C DEG C by heating platform temperature setting, takes out the solid state microwave sources cavity being baked The quick heating platform for placing 250 ± 5 DEG C DEG C is welded, and when tin cream starts to melt, with tweezers insulating microwave sub-component is stirred With insulator, make soldering paste fully flow, after the completion of welding, cavity is removed from heating platform, be placed on natural cooling on filter paper;
Pierce circuit plate, Rogers plates, filter circuit back are printed 183 DEG C of solder(ing) pastes by 4.4, are attached to solid state microwave On source chamber body position;And at components and parts to be welded on pierce circuit plate 183 DEG C of solder(ing) pastes of spot printing, components and parts are placed on into weldering At cream;By install pierce circuit plate, Rogers plates, filter circuit plate cavity be placed on 150 ± 5 DEG C of warm table in advance Heat, then be placed on 210 ± 5 DEG C of warm tables and welded, after completing welding, it is placed on filter paper and naturally cools to 22~25 ℃;
4.5 cleaning.
6. a kind of manufacturing process of solid state microwave sources as claimed in claim 1, it is characterised in that:Described step 5: Amplifier circuit sintered components make to be included:
5.1 amplifier eutectic establishment of component
80Au20Sn solder sheets, carrier are cleaned by ultrasonic, after carrier is fixed on warm table with 295 ± 5 DEG C of preheating temperatures, when Between be no less than 5s;The solder sheet of well cutting is positioned over into the position to be welded of carrier;Subsequently with tweezers solder sheet is spread out rapidly, spread The solder area opened is slightly larger than chip area to be welded, and removes linen welding flux slag;Grip amplifier core with tweezers respectively Piece, attenuator chip and chip capacity rub and press in solder surface, and the actual fraction time of each chip is controlled in 13s- 25s;And guarantee that chip to be welded and carrier are in close contact during friction, after by chip positioning,;Remove eutectic component and be placed on and carry Having in the culture dish of filter paper substrate for lid is cooled to 22~25 DEG C;
5.2. amp circuit package is placed under microscope, position point gum machine to be sintered is uniformly coated into one layer 183 DEG C Soldering paste, be put into position to be welded by amplifier eutectic component is smooth, and by the bonding welding pad of amplifier eutectic device wafer with Band wire centering;Oven temperature is set to into 150 ± 5 DEG C, amp circuit package to be sintered and amplifier eutectic group is placed Part dries 5 ± 1 minutes in baking oven;It is by heating platform temperature setting(190±5)DEG C, take out the component being baked and quickly place Welded in 190 ± 5 DEG C of thermal station, when tin cream starts to melt, carried out with tweezers gripping amplifier eutectic device wafer component Rub and press, actual fraction time is controlled in 13s-25s;And guarantee that chip carrier is in close contact with bottom bracket during friction, By the bonding welding pad of amplifier eutectic device wafer and microstrip line centering, the component for sintering is removed into placement filter paper from thermal station cold But to 22~25 DEG C;
5.3 cleaning.
7. a kind of manufacturing process of solid state microwave sources as claimed in claim 1, it is characterised in that:Described step 6:Surely Transformer circuits component is glued and includes:
The EPO-TEKH20E of thin layer will be smeared at cementing HR78C05, HR78C09 voltage stabilizing chip in voltage regulator circuit component Conducting resinl, is placed on and is treated cementing place with tweezers gripping HR78C05, HR78C09 voltage stabilizing chip respectively, then by cementing HR78C05, The voltage regulator circuit component of HR78C09 voltage stabilizing chips is put in baking oven and is solidified, and solidification temperature is 120 ± 1 DEG C, 60 ± 1 points of time Clock, takes out from baking oven, to place and naturally cool to 22~25 DEG C on filter paper.
8. a kind of manufacturing process of solid state microwave sources as claimed in claim 1, it is characterised in that:Described step 7:Gold Silk bonding includes:
Voltage regulator circuit component after splicing, amplifier circuit sintered components are placed on warm table, heating platform temperature sets Standby is 100 ± 5 DEG C, with 25.4 μm of spun golds, is bonded, and after bonding terminates, voltage regulator circuit component, amplifier circuit is sintered Component is removed to be placed on filter paper from warm table and is cooled to 22~25 DEG C.
9. a kind of manufacturing process of solid state microwave sources as claimed in claim 1, it is characterised in that:Described step 8:Electricity Dress includes:Amplifier circuit is bonded into component, voltage regulator circuit bonding component, power circuit components, the assembling of modulation circuit component, With rustless steel cross recess M1.6 × 4 cheese head screw, each component of all-in-one-piece will be assembled in oscillation filter circuit unit, then The welding of each component circuit board Copper Foil is connected to together, after insulator is linked with substrate, finally with alcohol swab by welding region Wiped clean.
10. the manufacturing process of a kind of solid state microwave sources as described in claim 3,4,5 or 6, it is characterised in that:It is described The step of 2.2,3.4,4.5,5.3 be:
1)Cleaned using vapour phase cleaning machine, the ABZOL CEG CLEANER cleanings for filling 60 DEG C will be placed on cleaning circuit plate Hot brew 20 ± 1 minutes in the rinse bath of agent;
2)Take out step 1)In circuit board be placed in the culture dish for filling 60 DEG C of dehydrated alcohol and scrubbed, substrate surface makes Scrubbed with yellow fur brush, circuit board element surrounding gap carries out scrub 5 ± 1 minutes using yellowish pink scrub-brush;
3)Toast 5 ± 1 minutes in the baking oven that circuit board is placed again 50 DEG C, naturally cool to 22~25 DEG C.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009285719A (en) * 2008-05-30 2009-12-10 Nippon Dennetsu Co Ltd Flux applicator
CN102244336A (en) * 2011-06-09 2011-11-16 中国科学院半导体研究所 Photo-generated microwave source with stable frequency
CN102518541A (en) * 2011-12-27 2012-06-27 成都集思科技有限公司 Solid state microwave source for ignition of internal combustion engine
CN204101722U (en) * 2014-08-07 2015-01-14 南京誉葆科技有限公司 A kind of microwave source tuner device
CN204349969U (en) * 2014-12-18 2015-05-20 安徽华东光电技术研究所 A kind of Ku wave band dielectric oscillator

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009285719A (en) * 2008-05-30 2009-12-10 Nippon Dennetsu Co Ltd Flux applicator
CN102244336A (en) * 2011-06-09 2011-11-16 中国科学院半导体研究所 Photo-generated microwave source with stable frequency
CN102518541A (en) * 2011-12-27 2012-06-27 成都集思科技有限公司 Solid state microwave source for ignition of internal combustion engine
CN204101722U (en) * 2014-08-07 2015-01-14 南京誉葆科技有限公司 A kind of microwave source tuner device
CN204349969U (en) * 2014-12-18 2015-05-20 安徽华东光电技术研究所 A kind of Ku wave band dielectric oscillator

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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