CN107331605B - Infrared sensor and preparation method thereof - Google Patents
Infrared sensor and preparation method thereof Download PDFInfo
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- CN107331605B CN107331605B CN201710516641.6A CN201710516641A CN107331605B CN 107331605 B CN107331605 B CN 107331605B CN 201710516641 A CN201710516641 A CN 201710516641A CN 107331605 B CN107331605 B CN 107331605B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 239000010410 layer Substances 0.000 claims abstract description 180
- 238000005468 ion implantation Methods 0.000 claims abstract description 24
- 239000002344 surface layer Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000010849 ion bombardment Methods 0.000 claims abstract description 7
- 150000002500 ions Chemical class 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 10
- -1 and simultaneously Substances 0.000 claims description 2
- 238000000137 annealing Methods 0.000 abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910001423 beryllium ion Inorganic materials 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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Abstract
The invention provides an infrared sensor and a preparation method thereof, wherein the infrared sensor comprises: a substrate, on which a sensitive layer is arranged; covering electrode layer patterns on the side wall and the top of the sensitive layer; the surface layer of the top of the sensitive layer, which is contacted with the bottom of the electrode layer pattern, is provided with a doped sensitive layer; the doped sensitive layer is obtained by ion bombardment through the electrode layer pattern into the sensitive layer. According to the invention, the contact between the electrode layer and the sensitive layer is improved by ion implantation, and high-temperature annealing of the sensitive layer and the electrode layer is not required, so that the influence on a device and subsequent interconnection is avoided.
Description
Technical Field
The invention relates to the technical field of image sensors, in particular to an infrared sensor and a preparation method thereof.
Background
In the traditional non-refrigerated infrared imaging sensor structure, an ASIC circuit is manufactured by using a CMOS standard process, and then an MEMS process is manufactured on an interconnection layer. Since the MEMS process follows the interconnect level process, a high temperature process cannot be used to avoid affecting the parameters and performance of the device and subsequent interconnects.
However, without high temperature process, the contact problem between the electrode layer and the amorphous silicon sensitive layer becomes a key to affect the performance of the product, and how to improve the contact characteristics becomes one of the important considerations of process integration.
Disclosure of Invention
In order to overcome the problems, the invention aims to improve the contact performance of an electrode layer and a sensitive layer in an infrared sensor without high-temperature treatment.
In order to achieve the above object, the present invention provides an infrared sensor comprising:
a substrate, on which a sensitive layer is arranged;
covering electrode layer patterns on the side wall and the top of the sensitive layer;
the surface layer of the top of the sensitive layer, which is contacted with the bottom of the electrode layer pattern, is provided with a doped sensitive layer; and bombarding the surface of the sensitive layer by ions, wherein the bombarded ions enter the sensitive layer, so that the doped sensitive layer is obtained.
Preferably, the doped sensitive layer is a metalized doped sensitive layer, and the metalized doped sensitive layer is obtained by bombarding metal in the electrode layer pattern into the sensitive layer through ion bombardment.
Preferably, the ions used for the ion bombardment are P-type ions.
Preferably, the P-type ion source is a B-containing ion.
In order to achieve the above object, the present invention also provides a method for manufacturing an infrared sensor, comprising:
step 01: providing a substrate with a sensitive layer on the surface;
step 02: forming a photoresist pattern on the sensitive layer, wherein a hollow area in the photoresist pattern exposes the sensitive layer, and the hollow area corresponds to the area of a subsequent electrode layer;
step 03: carrying out ion implantation on the exposed sensitive layer to form a doped sensitive layer;
step 04: and removing the photoresist pattern, and forming an electrode layer on the surface of the doped sensitive layer to enable the electrode layer to be in contact with the doped sensitive layer.
Preferably, in the step 03, a P-type ion source is used for ion implantation.
Preferably, the P-type ion source is a B-containing ion.
In order to achieve the above object, the present invention also provides a method for manufacturing an infrared sensor, comprising:
step 01: providing a substrate with a sensitive layer on the surface;
step 02: forming an electrode layer pattern on the sensitive layer; exposing the top surface of the sensitive layer at the bottom of the electrode layer pattern;
step 03: forming a mask on the top surface of the exposed sensitive layer;
step 04: bombarding an electrode layer pattern on the top of the sensitive layer by adopting an ion implantation process, wherein ions implanted into the electrode layer pattern penetrate through the electrode layer pattern and enter the top surface layer of the sensitive layer, and simultaneously, metal of the electrode layer pattern is bombarded by the implanted ions and enters the top surface layer of the sensitive layer, so that a doped sensitive layer is formed in the top surface layer of the sensitive layer, which is in contact with the bottom of the electrode layer pattern, and a metalized doped sensitive layer is formed at the top of the doped sensitive layer;
step 05: the mask is removed.
Preferably, in the step 04, a P-type ion source is used for ion implantation.
Preferably, the P-type ion source is a B-containing ion.
According to the invention, ion implantation is utilized, on one hand, on the basis of not changing the doping concentration of the resistance region of the sensitive layer, the doping concentration of the sensitive layer material below the electrode layer is improved through ion implantation; meanwhile, the impact effect of ion implantation is utilized to bombard the metal components of the contact interface into the surface region of the sensitive layer, so that the contact performance of the sensitive layer and the electrode layer is improved without adopting high-temperature annealing, and the contact performance and the performance of the whole product are improved under the low-temperature condition.
Drawings
FIG. 1 is a schematic structural diagram of an infrared sensor according to a preferred embodiment of the present invention
FIG. 2 is a schematic flow chart of a method for manufacturing an infrared sensor according to a preferred embodiment of the present invention
FIGS. 3 to 6 are schematic views of each step of the preparation method of FIG. 2
FIG. 7 is a flow chart illustrating a method for manufacturing an infrared sensor according to a preferred embodiment of the present invention
FIGS. 8 to 12 are schematic views of each step of the preparation method of FIG. 7
Detailed Description
In order to make the contents of the present invention more comprehensible, the present invention is further described below with reference to the accompanying drawings. The invention is of course not limited to this particular embodiment, and general alternatives known to those skilled in the art are also covered by the scope of the invention.
The present invention will be described in further detail with reference to examples 1 to 12. It should be noted that the drawings are in a simplified form and are not to precise scale, and are only used for conveniently and clearly achieving the purpose of assisting in describing the embodiment.
Referring to fig. 1, the infrared sensor of the present embodiment includes: a substrate 00, wherein the substrate 00 is provided with a sensitive layer 01; an electrode layer pattern 03 covers the side wall and the top of the sensitive layer 01; the surface layer of the top of the sensitive layer 02, which is in contact with the bottom of the electrode layer pattern 03, is provided with a doped sensitive layer 02(ii) a The doped sensitive layer 02 is obtained by ion bombardment into the sensitive layer. The ions adopted by the ion bombardment are P-type ions, and the P-type ion source is ions containing B; such as B+Or BF+And the like. Specifically, the substrate here may be a silicon substrate. The material of the sensitive layer 01 may be amorphous silicon.
And, furthermore, the top of the doped sensitive layer 02 and the bottom of the electrode layer pattern 03 are also provided with a metalized doped sensitive layer 02", and the metalized doped sensitive layer 02" is obtained by bombarding the metal in the electrode layer pattern 03 into the sensitive layer 01 through ion bombardment, as shown in fig. 12.
Referring to fig. 2, a method for manufacturing an infrared sensor of the present embodiment includes:
step 01: referring to fig. 3, a substrate 00 having a sensitive layer 01 on a surface thereof is provided;
step 02: referring to fig. 4, a photoresist pattern R is formed on the sensitive layer 01, and a hollow area in the photoresist pattern exposes the sensitive layer 01 and corresponds to an area of a subsequent electrode layer;
specifically, the adopted photoresist R is a negative photoresist, and the negative photoresist is etched by using the mask pattern of the electrode layer, so that a hollow area opposite to the mask pattern of the electrode layer is formed in the negative photoresist.
Step 03: referring to fig. 5, ion implantation is performed on the exposed sensitive layer 01 to form a doped sensitive layer 02;
specifically, a P-type ion source is adopted for ion implantation, wherein the P-type ion source can be ions containing B; such as B+Or BF+And the like.
The impurity concentration of the doped sensitive layer 02 is greater than that of other parts of the sensitive layer 01, so that good contact between the electrode layer pattern and the sensitive layer 02 is formed, damage to the sensitive layer caused by high temperature can be avoided, the ion implantation energy adopted during ion implantation is 100 eV-1 KeV, and the dosage adopted is 5E 14-1E 18/cm3And the temperature adopted during ion implantation is less than or equal to 90 ℃. The implantation energy, dosage and temperature are matched to realizeThe ions bombard into the surface layer of the sensitive layer 01 and do not damage the sensitive layer 01.
In addition, low-temperature annealing can be carried out after ion implantation, and the temperature is not more than 400 ℃, so that damage to the sensitive layer is avoided.
Step 04: referring to fig. 6, the photoresist pattern R is removed, and an electrode layer 03 is formed on the surface of the doped sensitive layer 02, such that the electrode layer 03 contacts the doped sensitive layer 02.
Specifically, the electrode layer is formed by a physical vapor deposition process, and the photoresist R may be removed by a wet etching process.
Therefore, in the method of the embodiment, the electrode layer 03 and the sensitive layer 02 can be well contacted by ion implantation into the surface layer of the sensitive layer 02 at the bottom of the electrode layer 03 without performing high-temperature annealing on the sensitive layer 01 and the electrode layer 03.
In addition, an infrared sensor with a metalized doped sensitive layer can be prepared to improve the contact performance of the electrode layer and the sensitive layer.
Referring to fig. 7 to 12, a method for manufacturing an infrared sensor according to another embodiment of the present invention includes:
step 01: referring to fig. 8, a substrate 00 having a sensitive layer 01 on a surface thereof is provided;
step 02: referring to fig. 9, an electrode layer pattern 03 is formed on the sensitive layer 01; the bottom of the electrode layer pattern 03 is exposed out of the top surface of the sensitive layer 01;
specifically, but not limited to, the electrode layer may be formed by using a physical vapor deposition process, and the electrode layer may be patterned by using a photolithography and etching process to form the electrode layer pattern 03.
Step 03: referring to fig. 10, a mask M is formed on the top surface of the exposed sensitive layer 01;
specifically, the mask M may be, but is not limited to, a photoresist.
Step 04: referring to fig. 11, an ion implantation process is used to bombard an electrode layer pattern 03 on the top of a sensitive layer 01, ions implanted into the electrode layer pattern 03 penetrate through the electrode layer pattern 03 and enter the top surface layer of the sensitive layer 01, and simultaneously, metal of the electrode layer pattern 03 is bombarded by the implanted ions and enters the top surface layer of the sensitive layer 01, so that a doped sensitive layer 02 is formed in the top surface layer of the sensitive layer 01 in contact with the bottom of the electrode layer pattern 03, and a metalized doped sensitive layer 02 is formed on the top of the doped sensitive layer 02;
specifically, a P-type ion source is adopted for ion implantation, wherein the P-type ion source can be ions containing B; such as B+Or BF+And the like. Here, the bottom of the metallized doped sensitive layer 02 "is also provided with a doped sensitive layer 02 by ion implantation.
Note that the impurity concentration of the metallization doping sensitive layer 02 ″ is greater than that of the other portions of the sensitive layer 01, so that a good contact is formed between the electrode layer pattern 03 and the sensitive layer 02. When ions are implanted, the implanted ions impact the metal component in the electrode layer pattern 03 to make the metal component in the electrode layer pattern 03 bombarded into the top surface layer of the sensitive layer 01, and in order to achieve the purpose and avoid damage to the sensitive layer 01 caused by high temperature, the ion implantation energy adopted during ion implantation is set to be 100 eV-1 KeV, and the adopted dosage is 5E 14-1E 18/cm3And the temperature adopted during ion implantation is less than or equal to 90 ℃. The implantation energy, dosage and temperature are matched to realize that ions are bombarded into the sensitive layer 01 and part of metal components are bombarded into the surface layer of the sensitive layer 01 without damaging the sensitive layer 01.
In addition, low-temperature annealing can be performed after ion implantation, and the temperature is not more than 400 ℃, so that damage to the sensitive layer 01 is avoided.
Step 05: referring to fig. 12, the mask M is removed.
Specifically, the mask M may be removed by, but not limited to, a wet etching process.
Although the present invention has been described with reference to preferred embodiments, it is to be understood that the present invention is not limited to the disclosed embodiments, but rather, may be embodied in many different forms and modifications without departing from the spirit and scope of the present invention as defined by the appended claims.
Claims (6)
1. An infrared sensor, comprising:
a substrate, on which a sensitive layer is arranged;
covering electrode layer patterns on the side wall and the top of the sensitive layer;
the surface layer of the top of the sensitive layer, which is contacted with the bottom of the electrode layer pattern, is provided with a doped sensitive layer, and the top of the doped sensitive layer and the bottom of the electrode layer pattern are also provided with metalized doped sensitive layers; bombarding the surface of the sensitive layer by ions, wherein the bombarded ions enter the sensitive layer, so as to obtain a doped sensitive layer; meanwhile, the metal of the electrode layer pattern is implanted with ions and bombarded into the surface layer at the top of the sensitive layer, so that a metalized doped sensitive layer is formed at the top of the doped sensitive layer.
2. The infrared sensor of claim 1, wherein the ions used for the ion bombardment are P-type ions.
3. The infrared sensor of claim 2, wherein the source of P-type ions is a B-containing ion.
4. A preparation method of an infrared sensor is characterized by comprising the following steps:
step 01: providing a substrate with a sensitive layer on the surface;
step 02: forming an electrode layer pattern on the sensitive layer; exposing the top surface of the sensitive layer at the bottom of the electrode layer pattern;
step 03: forming a mask on the top surface of the exposed sensitive layer;
step 04: bombarding an electrode layer pattern on the top of the sensitive layer by adopting an ion implantation process, wherein ions implanted into the electrode layer pattern penetrate through the electrode layer pattern and enter the top surface layer of the sensitive layer, and simultaneously, metal of the electrode layer pattern is bombarded by the implanted ions and enters the top surface layer of the sensitive layer, so that a doped sensitive layer is formed in the top surface layer of the sensitive layer, which is in contact with the bottom of the electrode layer pattern, and a metalized doped sensitive layer is formed at the top of the doped sensitive layer;
step 05: the mask is removed.
5. The method of claim 4, wherein in step 04, a P-type ion source is used for ion implantation.
6. The method of claim 5, wherein the P-type ion source is a B-containing ion.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710516641.6A CN107331605B (en) | 2017-06-29 | 2017-06-29 | Infrared sensor and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710516641.6A CN107331605B (en) | 2017-06-29 | 2017-06-29 | Infrared sensor and preparation method thereof |
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| CN107331605A CN107331605A (en) | 2017-11-07 |
| CN107331605B true CN107331605B (en) | 2020-03-20 |
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| CN108231943B (en) * | 2017-12-14 | 2020-05-15 | 上海集成电路研发中心有限公司 | Infrared detector and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752517A (en) * | 2013-12-31 | 2015-07-01 | 昆山工研院新型平板显示技术中心有限公司 | Thin film transistor as well as preparation method and application of thin film transistor |
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| JPS5368187A (en) * | 1976-11-30 | 1978-06-17 | Fujitsu Ltd | Production of infrared detector |
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| CN104752517A (en) * | 2013-12-31 | 2015-07-01 | 昆山工研院新型平板显示技术中心有限公司 | Thin film transistor as well as preparation method and application of thin film transistor |
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