CN107331605A - A kind of infrared sensor and preparation method thereof - Google Patents
A kind of infrared sensor and preparation method thereof Download PDFInfo
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- CN107331605A CN107331605A CN201710516641.6A CN201710516641A CN107331605A CN 107331605 A CN107331605 A CN 107331605A CN 201710516641 A CN201710516641 A CN 201710516641A CN 107331605 A CN107331605 A CN 107331605A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 150000002500 ions Chemical class 0.000 claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000001465 metallisation Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 238000001259 photo etching Methods 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000003795 chemical substances by application Substances 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 7
- 239000011800 void material Substances 0.000 claims description 6
- 238000009738 saturating Methods 0.000 claims 1
- 238000000137 annealing Methods 0.000 abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000004615 ingredient Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention provides a kind of infrared sensor and preparation method thereof, infrared sensor includes：There is sensitive layer on one substrate, substrate；In sensitive layer side wall and top covered with electrode layer pattern；The top layer touched at the top of sensitive layer with electrode layer pattern bottom connection has doping sensitive layer；Doping sensitive layer is entered by Ions Bombardment through electrode layer pattern to be obtained in sensitive layer.The present invention improves the contact between electrode layer and sensitive layer using ion implanting, it is not necessary to carry out high annealing to sensitive layer and electrode layer, it is to avoid the influence to device and post-channel interconnection.
Description
Technical field
The present invention relates to image sensor technologies field, and in particular to a kind of infrared sensor and preparation method thereof.
Background technology
ASIC circuit is made using CMOS standard technologies in traditional non-refrigeration type infrared imaging sensor structure, then mutual
Even MEMS technology is made on level.Because MEMS technology is after interconnection level technique, so high-temperature process work can not be used
Skill, to avoid the parameter and performance that influence device and post-channel interconnection.
However, being handled without high-temperature technology, the contact problems between electrode layer and non-crystalline silicon sensitive layer turn into influence and produced
How the key of moral character energy, lift its contact performance, one of the problem of being considered as the integrated emphasis of technique.
The content of the invention
In order to overcome problem above, it is contemplated that improve without high-temperature process in infrared sensor electrode layer with it is quick
Feel the contact performance of layer.
In order to achieve the above object, the invention provides a kind of infrared sensor, including：
There is sensitive layer on one substrate, substrate；
In sensitive layer side wall and top covered with electrode layer pattern；
The top layer touched at the top of the sensitive layer with electrode layer pattern bottom connection has doping sensitive layer；Pass through Ions Bombardment
Sensitive layer surface, the ion of bombardment enters in sensitive layer, so as to obtain the sensitive layer that adulterates.
Preferably, the doping sensitive layer is metallization doping sensitive layer, by Ions Bombardment by electrode layer pattern
Metal bombardment, which enters, obtains metallization doping sensitive layer in sensitive layer.
Preferably, the ion that the Ions Bombardment is used is p-type ion.
Preferably, the p-type ion gun is the ion containing B.
In order to achieve the above object, present invention also offers a kind of preparation method of infrared sensor, it includes：
Step 01：There is provided surface has the substrate of sensitive layer；
Step 02：Void region in photoetching agent pattern, photoetching agent pattern is formed on sensitive layer and exposes sensitive layer, and
The void region is corresponding with the region of follow-up electrode layer；
Step 03：Ion implanting is carried out to exposed sensitive layer, doping sensitive layer is formed；
Step 04：Photoetching agent pattern is removed, and in the sensitive layer surface formation electrode layer of doping, makes electrode layer quick with adulterating
Feel layer contact.
Preferably, in the step 03, ion implanting is carried out using p-type ion gun.
Preferably, the p-type ion gun is the ion containing B.
In order to achieve the above object, present invention also offers a kind of preparation method of infrared sensor, it includes：
Step 01：There is provided surface has the substrate of sensitive layer；
Step 02：Electrode layer pattern is formed on sensitive layer；Electrode layer pattern bottom-exposed goes out sensitive layer top surface；
Step 03：In exposed sensitive layer top surface formation mask；
Step 04：Using ion implantation technology bombard sensitive layer at the top of electrode layer pattern, injecting electrode layer pattern from
Son enters in sensitive layer top skin through electrode layer pattern, meanwhile, the metal of electrode layer pattern is injected into Ions Bombardment entrance
In sensitive layer top skin, so that it is sensitive that doping is formed in the sensitive layer top skin touched with electrode layer pattern bottom connection
Layer, forms metallization doping sensitive layer at the top of doping sensitive layer；
Step 05：Remove mask.
Preferably, in the step 04, ion implanting is carried out using p-type ion gun.
Preferably, the p-type ion gun is the ion containing B.
The present invention utilizes ion implanting, on the one hand on the basis of sensitive layer resistance region doping concentration is not changed, passes through
Ion implanting lifts the material doped concentration of sensitive layer below electrode layer；Simultaneously using the knock-on effect of ion implanting, it will connect
The metal ingredient bombardment for touching interface enters sensitive layer surface region, without lifting sensitive layer and electrode using high annealing
The contact performance of layer, realizes and contact performance and the whole properties of product of lifting is lifted under cryogenic conditions.
Brief description of the drawings
Fig. 1 is the structural representation of the infrared sensor of the preferred embodiment of the present invention
Fig. 2 is the schematic flow sheet of the preparation method of the infrared sensor of the preferred embodiment of the present invention
Fig. 3~6 are each step schematic diagram of Fig. 2 preparation method
Fig. 7 is the schematic flow sheet of the preparation method of the infrared sensor of the preferred embodiment of the present invention
Fig. 8~12 are each step schematic diagram of Fig. 7 preparation method
Embodiment
To make present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into one
Walk explanation.Certainly the invention is not limited in the specific embodiment, the general replacement known to those skilled in the art
Cover within the scope of the present invention.
The present invention is described in further detail below in conjunction with 1~12 and specific embodiment.It should be noted that, accompanying drawing is adopted
With very simplified form, using non-accurately ratio, and the mesh only conveniently, clearly to reach aid illustration the present embodiment
's.
Referring to Fig. 1, the infrared sensor of the present embodiment, including：There is sensitive layer 01 on one substrate 00, substrate 00；
The side wall of sensitive layer 01 and top are covered with electrode layer pattern 03；The table that the top of sensitive layer 02 is touched with the bottom connection of electrode layer pattern 03
Layer has doping sensitive layer 02；Doping sensitive layer 02 is entered by Ions Bombardment to be obtained in sensitive layer.Ions Bombardment is used
Ion be p-type ion, p-type ion gun be the ion containing B；Such as B+Or BF+Deng.Specifically, substrate here can be silicon lining
Bottom.The material of sensitive layer 01 can be non-crystalline silicon.
Also, further, the bottom of the top of doping sensitive layer 02 and electrode layer pattern 03 also has metallization doping quick
Feel layer 02 ", metallization doping sensitive layer 02 " is to bombard the metal in electrode layer pattern 03 by Ions Bombardment to enter sensitive layer
Obtained by 01, as shown in figure 12.
Referring to Fig. 2, a kind of preparation method of infrared sensor of the present embodiment, including：
Step 01：Referring to Fig. 3, providing surface has the substrate 00 of sensitive layer 01；
Step 02：Exposed referring to Fig. 4, forming void region in photoetching agent pattern R, photoetching agent pattern on sensitive layer 01
Go out sensitive layer 01, and the void region is corresponding with the region of follow-up electrode layer；
Specifically, the photoresist R used is negative photoresist, using the mask pattern of electrode layer come photoetching negative photo
Glue, so as to form the void region relative with the mask pattern of electrode layer in negative photoresist.
Step 03：Referring to Fig. 5, carrying out ion implanting to exposed sensitive layer 01, doping sensitive layer 02 is formed；
Specifically, carrying out ion implanting using p-type ion gun, p-type ion gun can be the ion containing B here,；Such as B+
Or BF+Deng.
It should be noted that the impurity concentration of doping sensitive layer 02 is more than the impurity concentration of the other parts of sensitive layer 01, from
And make to form good contact between electrode layer pattern and sensitive layer 02, also, the sensitive layer that high temperature can also be avoided to cause is damaged
Wound, the ion implantation energy used during ion implanting is 100eV~1KeV, and the dosage used is 5E14~1E18/cm3, ion
The temperature used during the ion implanting used during injection is less than or equal to 90 DEG C.Above-mentioned Implantation Energy, dosage and the temperature side of being engaged
It can realize and Ions Bombardment is entered into the top layer of sensitive layer 01 and sensitive layer 01 is not damaged simultaneously.
In addition, can also carry out process annealing after ion implantation, temperature is not more than 400 DEG C, so as to avoid to sensitive layer
Cause damage.
Step 04：Referring to Fig. 6, removing photoetching agent pattern R, and electrode layer 03 is formed on doping sensitive layer 02 surface,
Electrode layer 03 is set to be contacted with doping sensitive layer 02.
Specifically, using physical gas-phase deposition formation electrode layer, photoresist R removal can use wet etching work
Skill.
As can be seen here, the method for the present embodiment, it is not necessary to which high annealing is carried out to sensitive layer 01 and electrode layer 03, by from
Son is injected into the top layer of sensitive layer 02 of the bottom of electrode layer 03, you can to realize the good contact of electrode layer 03 and sensitive layer 02.
Further, it is also possible to prepare the infrared sensor with metallization doping sensitive layer to improve electrode layer and sensitive layer
Contact performance.
Fig. 7~12 are referred to, a kind of preparation method of infrared sensor of other embodiments of the invention includes：
Step 01：Referring to Fig. 8, providing surface has the substrate 00 of sensitive layer 01；
Step 02：Referring to Fig. 9, forming electrode layer pattern 03 on sensitive layer 01；The bottom-exposed of electrode layer pattern 03 goes out
The top surface of sensitive layer 01；
Specifically, can be, but not limited to using physical gas-phase deposition formation electrode layer, and through photoetching and etching technics
Patterned electrode layer, forms electrode layer pattern 03.
Step 03：Referring to Fig. 10, in the exposed top surface of sensitive layer 01 formation mask M；
Specifically, mask M can be, but not limited to use photoresist.
Step 04：Figure 11 is referred to, the electrode layer pattern 03 at the top of sensitive layer 01, injection are bombarded using ion implantation technology
The ion permeable electrode layer pattern 03 of electrode layer pattern 03 enters in the top skin of sensitive layer 01, meanwhile, electrode layer pattern 03
Metal is injected into Ions Bombardment and entered in the top skin of sensitive layer 01, so that in the sensitivity touched with the bottom connection of electrode layer pattern 03
Doping sensitive layer 02 is formed in 01 top skin of layer, metallization doping sensitive layer 02 is formed at the top of doping sensitive layer 02 "；
Specifically, carrying out ion implanting using p-type ion gun, p-type ion gun can be the ion containing B here,；Such as B+
Or BF+Deng.Here, metallization doping sensitive layer 02 " bottom is also ion implanted to have one layer of doping sensitive layer 02.
The impurity concentration of the sensitive layer 02 it should be noted that metallization is adulterated " is more than the impurity of the other parts of sensitive layer 01
Concentration, so that forming good contact between electrode layer pattern 03 and sensitive layer 02.During ion implanting, injection ionic bombardment electricity
Metal ingredient in pole layer pattern 03, makes the metal ingredient in electrode layer pattern 03 be entered the top table of sensitive layer 01 by bombardment
Layer, in order to realize this purpose, also, in order to avoid the sensitive layer 01 that high temperature is caused is damaged, is adopted when can set ion implanting
Ion implantation energy is 100eV~1KeV, and the dosage used is 5E14~1E18/cm3, the ion used during ion implanting
The temperature used during injection is less than or equal to 90 DEG C.Above-mentioned Implantation Energy, dosage and temperature, which are engaged, can realize Ions Bombardment
The bombardment of part metals composition is entered into the top layer of sensitive layer 01 simultaneously into sensitive layer 01 and sensitive layer 01 is not damaged.
In addition, can also carry out process annealing after ion implantation, temperature is not more than 400 DEG C, so as to avoid to sensitive layer
01 causes damage.
Step 05：Figure 12 is referred to, mask M is removed.
Specifically, can be, but not limited to remove mask M using wet corrosion technique.
Although the present invention is disclosed as above with preferred embodiment, right embodiment is illustrated only for the purposes of explanation, and
Be not used to limit the present invention, those skilled in the art can make without departing from the spirit and scope of the present invention it is some more
Dynamic and retouching, the protection domain that the present invention is advocated should be defined by claims.
Claims (10)
1. a kind of infrared sensor, it is characterised in that including：
There is sensitive layer on one substrate, substrate；
In sensitive layer side wall and top covered with electrode layer pattern；
The top layer touched at the top of the sensitive layer with electrode layer pattern bottom connection has doping sensitive layer；It is sensitive by Ions Bombardment
Layer surface, the ion of bombardment enters in sensitive layer, so as to obtain the sensitive layer that adulterates.
2. infrared sensor according to claim 1, it is characterised in that the doping sensitive layer is sensitive for metallization doping
Layer, the metal bombardment in electrode layer pattern is entered metallization doping sensitive layer is obtained in sensitive layer by Ions Bombardment.
3. infrared sensor according to claim 1, it is characterised in that the ion that the Ions Bombardment is used for p-type from
Son.
4. infrared sensor according to claim 3, it is characterised in that the p-type ion gun is the ion containing B.
5. a kind of preparation method of infrared sensor, it is characterised in that including：
Step 01：There is provided surface has the substrate of sensitive layer；
Step 02：Void region in photoetching agent pattern, photoetching agent pattern is formed on sensitive layer and exposes sensitive layer, and this is engraved
Dummy section is corresponding with the region of follow-up electrode layer；
Step 03：Ion implanting is carried out to exposed sensitive layer, doping sensitive layer is formed；
Step 04：Photoetching agent pattern is removed, and in the sensitive layer surface formation electrode layer of doping, makes electrode layer and doping sensitive layer
Contact.
6. method according to claim 5, it is characterised in that in the step 03, ion note is carried out using p-type ion gun
Enter.
7. method according to claim 6, it is characterised in that the p-type ion gun is the ion containing B.
8. a kind of preparation method of infrared sensor, it is characterised in that including：
Step 01：There is provided surface has the substrate of sensitive layer；
Step 02：Electrode layer pattern is formed on sensitive layer；Electrode layer pattern bottom-exposed goes out sensitive layer top surface；
Step 03：In exposed sensitive layer top surface formation mask；
Step 04：The electrode layer pattern bombarded using ion implantation technology at the top of sensitive layer, the ion of injecting electrode layer pattern is saturating
Electrode layer pattern is crossed to enter in sensitive layer top skin, meanwhile, the metal of electrode layer pattern is injected into Ions Bombardment and enters sensitive
In layer top skin, so that doping sensitive layer is formed in the sensitive layer top skin touched with electrode layer pattern bottom connection,
Adulterate sensitive layer top formation metallization doping sensitive layer；
Step 05：Remove mask.
9. method according to claim 8, it is characterised in that in the step 04, ion note is carried out using p-type ion gun
Enter.
10. method according to claim 9, it is characterised in that the p-type ion gun is the ion containing B.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710516641.6A CN107331605B (en) | 2017-06-29 | 2017-06-29 | Infrared sensor and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710516641.6A CN107331605B (en) | 2017-06-29 | 2017-06-29 | Infrared sensor and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN107331605A true CN107331605A (en) | 2017-11-07 |
| CN107331605B CN107331605B (en) | 2020-03-20 |
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| Application Number | Title | Priority Date | Filing Date |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108231943A (en) * | 2017-12-14 | 2018-06-29 | 上海集成电路研发中心有限公司 | A kind of infrared detector and its manufacturing method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5368187A (en) * | 1976-11-30 | 1978-06-17 | Fujitsu Ltd | Production of infrared detector |
| CN104752517A (en) * | 2013-12-31 | 2015-07-01 | 昆山工研院新型平板显示技术中心有限公司 | Thin film transistor as well as preparation method and application of thin film transistor |
-
2017
- 2017-06-29 CN CN201710516641.6A patent/CN107331605B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5368187A (en) * | 1976-11-30 | 1978-06-17 | Fujitsu Ltd | Production of infrared detector |
| CN104752517A (en) * | 2013-12-31 | 2015-07-01 | 昆山工研院新型平板显示技术中心有限公司 | Thin film transistor as well as preparation method and application of thin film transistor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108231943A (en) * | 2017-12-14 | 2018-06-29 | 上海集成电路研发中心有限公司 | A kind of infrared detector and its manufacturing method |
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| CN107331605B (en) | 2020-03-20 |
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