CN108640080A - A kind of metal electrode forming method of detector - Google Patents
A kind of metal electrode forming method of detector Download PDFInfo
- Publication number
- CN108640080A CN108640080A CN201810310467.4A CN201810310467A CN108640080A CN 108640080 A CN108640080 A CN 108640080A CN 201810310467 A CN201810310467 A CN 201810310467A CN 108640080 A CN108640080 A CN 108640080A
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- metal
- layer
- metal electrode
- forming method
- layer pattern
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00539—Wet etching
Abstract
The invention discloses a kind of metal electrode forming methods of detector, including：The panel detector structure that one surface has formed sensitive material layer pattern is provided；The deposited metal layer on sensitive material, by region overlay other than the surface of sensitive material layer pattern, mesa sidewall and its figure；Photoetching offset plate figure is formed on the metal layer, and the layer on surface of metal region for needing to form metal electrode figure is made to expose；Metal oxide layer pattern is formed in the layer on surface of metal of exposing；Remove photoetching offset plate figure；Using metal oxide layer pattern as mask, the metal layer material other than metal oxide layer pattern overlay area is removed, to form metal electrode.The present invention may make the technique to form metal detector electrode to become easy control and realization.
Description
Technical field
The present invention relates to semiconductor integrated circuit and detector technology field, being applied to MEMS more particularly, to one kind
The metal detector electrode forming method of technique.
Background technology
Microelectromechanical systems (MEMS) technology because with it is small, intelligent, executable, can integrate, processing compatibility is good, at
This low plurality of advantages, has started to be widely used in the numerous areas for including infrared detection technique field.Infrared detector is red
A kind of general MEMS product is widely used in outer detection technology field, it (is usually non-crystalline silicon using sensitive material detecting layer
Or vanadium oxide) absorb infrared ray and the infrared ray absorbed is converted to electric signal, to realize thermal imaging function, the thermal imaging work(
It can be so that infrared detector can be applied to the safety detection of electric power networks, the detection of forest fire alarm and detection of human body temperature etc.
Place.
Detector technique based on micro-bridge structure is to make periphery reading and signal processing circuit using CMOS technology, then
On cmos circuit make detector and and micro mechanical system structure.
Chinese invention patent application CN102169919A discloses a kind of detector comprising：Silicon substrate；Positioned at silicon substrate
On top layer metallic layer；Top layer via layer on top layer metallic layer；Metal function layer in top layer via layer；It is located at
Sacrificial layer in metal function layer；Positioned at the release guard layer and sensitive material of sacrificial layer surface；Positioned at sensitive material table
The contact hole and metal electrode in face；Positioned at the release guard layer etc. of surface of metal electrode.
Referring to Fig. 1, Fig. 1 is sensitive material and metal-layer structure signal in a kind of detector based on MEMS technology
Figure.As shown in Figure 1, in general, in suchlike above-mentioned panel detector structure, sensitive material generally uses amorphous silicon material,
After being patterned to sensitive material 1, step can be formed in its graphic edge；Later, it deposits and uses on sensitive material 1
When forming the thin metal layer 2 of metal electrode, which can be deposited on 1 patterned surface of sensitive material, sensitive material
Outside 1 figure of 1 figure mesa sidewall and sensitive material.When graphical thin metal layer makes metal electrode, due to figure
Shape feature sizes precision controlling is more demanding, the litho machine and corresponding photoresist for needing DUV (deep ultraviolet light) etc. more advanced into
Row photoetching.Simultaneously as needing the thin metal of removal part sensitive material mesa sidewall, it is necessary to use isotropic quarter
Etching technique, such as wet processing could remove clean.And when the photoresists such as DUV being used to carry out wet processing, often because sticking
Sex chromosome mosaicism and degumming.And if using one layer of hard mask, first patterned hard mask, then remove photoresist graphical thin metal again when, by
The O used when degumming process2Plasma can be by the thin oxidation on metal surface in the region being exposed, in thin metal surface shape
At one layer of metal oxide, and metal oxide be difficult remove by wet processing, therefore the technics comparing be difficult to control with
It realizes.
Invention content
It is an object of the invention to overcome drawbacks described above of the existing technology, a kind of metal electrode shape of detector is provided
At method.
To achieve the above object, technical scheme is as follows：
A kind of metal electrode forming method of detector, includes the following steps：
Step S01：The panel detector structure that one surface has formed sensitive material layer pattern is provided；
Step S02：The deposited metal layer on the sensitive material, by the surface of sensitive material layer pattern, mesa sidewall
And its region overlay other than figure；
Step S03：Photoetching offset plate figure is formed on the metal layer, and makes the metal layer for needing to form metal electrode figure
Surface region is exposed；
Step S04：Metal oxide layer pattern is formed in the layer on surface of metal of exposing；
Step S05：Remove photoetching offset plate figure；
Step S06：Using metal oxide layer pattern as mask, the gold other than metal oxide layer pattern overlay area is removed
Belong to layer material, to form metal electrode.
Preferably, in step S03, by forming photoresist layer on the metal layer, and by the metal in mask
Electrode pattern is set as opaque patterns, with after photoetching, formation metal electrode graphics field is opened on the metal layer
Photoetching offset plate figure.
Preferably, in step S04, using O2Plasma handles the layer on surface of metal of exposing, in exposing
Layer on surface of metal forms metal oxide layer pattern.
Preferably, in step S04, by the way of low energy ion beam implantation O, the layer on surface of metal of exposing is handled,
To form metal oxide layer pattern in the layer on surface of metal of exposing.
Preferably, the metal layer is the laminate film of metal, metal nitride, metal.
Preferably, in the metal stacking layer film, the metal positioned at upper layer is used to form metal oxide layer, under being located at
The metal of layer is used to enhance the connection of entire metal layer and sensitive material, and the metal nitride for being located at middle level is used to form gold
When belonging to oxide skin(coating) figure, diffusion of the barrier oxidation process to lower layer.
Preferably, by realizing the metal work(with metal layer lower layer positioned at the metal of lower layer in the metal stacking layer film
The electrical connection of ergosphere.
Preferably, in step S05, photoetching offset plate figure is removed using wet processing.
Preferably, in step S06, using metal oxide layer pattern as mask, and using wet processing etching removal metal
Inoxidized metal layer material other than oxide skin(coating) figure overlay area.
Preferably, inoxidized metal layer material includes removal gold other than removal metal oxide layer pattern overlay area
Area other than the surface of sensitive material layer pattern, mesa sidewall and sensitive material layer pattern other than category oxide skin(coating) figure overlay area
The inoxidized metal layer material of domain covering.
It can be seen from the above technical proposal that the present invention by formed metal electrode photoresist mask graph when, it is right
Metal electrode figure in original mask carries out transoid, so that metal electrode graphics field is become opaque from light transmission and is opened
And expose, and metal oxide layer pattern is formed in the layer on surface of metal of exposing, so as to utilize the metal oxide layer pattern
For mask, inoxidized metal layer material other than removal metal oxide layer pattern overlay area is etched using wet processing,
So that the technique for forming metal detector electrode becomes easy control and realization.
Description of the drawings
Fig. 1 is sensitive material and metal-layer structure schematic diagram in a kind of detector based on MEMS technology；
Fig. 2 is a kind of metal electrode forming method flow chart of detector of the present invention；
Fig. 3 is one of the metal electrode partial structurtes formed in a preferred embodiment of the present invention schematic diagram；
Fig. 4-Fig. 5 is processing step signal when forming the two of metal electrode partial structurtes in a preferred embodiment of the present invention
Figure.
Specific implementation mode
Below in conjunction with the accompanying drawings, the specific implementation mode of the present invention is described in further detail.
It should be noted that in following specific implementation modes, when embodiments of the present invention are described in detail, in order to clear
Ground indicates the structure of the present invention in order to illustrate, spy does not draw to the structure in attached drawing according to general proportion, and has carried out part
Amplification, deformation and simplified processing, therefore, should avoid in this, as limitation of the invention to understand.
In specific implementation mode of the invention below, referring to Fig. 2, Fig. 2 is a kind of metal of detector of the present invention
Electrode forming method flow chart；Meanwhile Fig. 3 and Fig. 4-Fig. 5 is please referred to, Fig. 3 is the gold formed in a preferred embodiment of the present invention
Belong to one of electrode partial structurtes schematic diagram, Fig. 4-Fig. 5 be formed in a preferred embodiment of the present invention metal electrode partial structurtes it
Processing step schematic diagram when two.As shown in Fig. 2, a kind of metal electrode forming method of detector of the present invention, including it is following
Step：
Step S01：The panel detector structure that one surface has formed sensitive material layer pattern is provided.
First, it is possible to provide a silicon substrate；It is usually possessed patterned that panel detector structure is successively formed on a silicon substrate
Top layer metallic layer, top layer via layer, metal function layer, sacrificial layer, the supported hole in sacrificial layer, sacrificial layer surface sequentially form
The structures such as release guard layer, sensitive material and contact hole.The panel detector structure for having formed sensitive material layer pattern belongs to known
The specific production method of technology, panel detector structure can refer to one kind disclosed in Chinese invention patent application CN102169919A
Associated process steps in the manufacturing method of detector.The invention is not limited thereto.
Step S02：The deposited metal layer on the sensitive material, by the surface of sensitive material layer pattern, mesa sidewall
And its region overlay other than figure.
Referring to Fig. 3, it shows that metal layer 2 is located at the part of contact hole, which will be used for after graphical
Form metal electrode.Routine techniques can be used and form metal function layer 3 on silicon substrate (figure omits), the shape in metal function layer 3
At sacrificial layer 4, forms sensitive material 1 on 4 surface of sacrificial layer and form contact hole 5.Then, continue in sensitive material 1
Upper deposited metal layer 2, by region overlay other than the surface of 1 figure of sensitive material, mesa sidewall and its figure.
Referring to Fig. 4, it shows that metal layer 2 is located at 1 patterned surface of sensitive material, mesa sidewall and sensitive material 1
Figure is with the part of exterior domain.Routine techniques can be used and form sensitive material 1 on 4 surface of sacrificial layer.Then, continue in sensitivity
Deposited metal layer 2 in material layer 1, by region overlay other than the surface of 1 figure of sensitive material, mesa sidewall and its figure.
Single thin layer metal can be used in metal layer 2, such as Ti or TiN can be used etc.；The metal of diagram can also be used in metal layer 2
23, the thin stack film 23,22,21 of metal nitride 22, metal 21, for example, can be used Ti TiN Ti laminate film.
Step S03：Photoetching offset plate figure is formed on the metal layer, and makes the metal layer for needing to form metal electrode figure
Surface region is exposed.
Please refer to Fig. 4.Routine techniques can be used and form photoresist layer on metal layer 2, and will be in mask (MASK)
Metal electrode figure be set as opaque (DARK) figure.In this way after photoetching, the metal electrode graphics field on metal layer 2
Photoresist it is not photosensitive and be eliminated, meanwhile, the photoresist other than metal electrode graphics field retains because photosensitive, to
The photoetching offset plate figure 6 that metal electrode graphics field is opened is formd on metal layer 2, makes the gold for needing to form metal electrode figure
Belong to 2 surface region of layer to be exposed.
Metal electrode figure in original mask has been carried out transoid processing by the present invention, makes metal electrode graphics field
Opaque (DARK) is become from light transmission (CLEAR), to make metal electrode graphics field be opened and expose the metal in the region
2 surface of layer.At this point, on metal layer 2 be located at metal electrode figure other than region, including diagram be located at 1 figure of sensitive material
Shape surface, mesa sidewall and 1 figure of sensitive material are all photo-etched glue 6 with the part of exterior domain and are covered.
Step S04：Metal oxide layer pattern is formed in the layer on surface of metal of exposing.
Please refer to Fig. 3, Fig. 4.Next, O can be used2Plasma handles 2 surface of metal layer of exposing, makes dew
2 surface oxidation of metal layer gone out, to form 231 figure of metal oxide layer on 2 surface of metal layer of exposing, such as by metal
The Ti metals 23 of top layer are oxidized to TiO in layer 22Metal oxide layer 231.
The mode that low energy ion beam implantation O can also be used handles 2 surface of metal layer of exposing, makes the metal of exposing
2 surface oxidation of layer equally can form 231 figure of metal oxide layer on 2 surface of metal layer of exposing.
As seen from Figure 3, after oxidation-treated, in 1 patterned surface of sensitive material and contact hole 5 is medium needs shape
Form metal oxide layer 231 at 2 surface of metal layer at the position of metal electrode, for example, Ti TiN Ti laminate film
23, in 22,21, TiO is formed by so that the Ti layers 23 on upper layer is aoxidized2Layer 231, on the surface of 2 laminate film of metal layer
Form TiO2Metal oxide layer 231.
As seen from Figure 4, after oxidation-treated, the portion of metal electrode is needed to form in 1 patterned surface of sensitive material
2 surface of metal layer of position also forms metal oxide layer 231, for example, Ti TiN Ti laminate film 23,22,21 in, lead to
Crossing makes the Ti layers 23 on upper layer aoxidize and form TiO2Layer 231 (can also be the surface oxidation for the Ti layers 23 for making upper layer and form TiO2
Layer 231), on the surface of 2 laminate film of metal layer form TiO2Metal oxide layer 231.
Other regions are covered by being photo-etched glue 6 so that 2 surface of metal layer of 6 lower section coated region of photoresist is not
Still can be 23 state of Ti metals by oxidation processes.
Step S05：Remove photoetching offset plate figure.
Please refer to Fig. 4.Next, wet processing removal, which can be used, is covered in metal electrode figure with the photoresist of exterior domain
6 figures.
Step S06：Using metal oxide layer pattern as mask, the gold other than metal oxide layer pattern overlay area is removed
Belong to layer material, to form metal electrode.
Please refer to Fig. 5.After 6 figure of photoresist in eliminating such as Fig. 4, so that it may with 2 laminate film surface of metal layer
231 figure of metal oxide layer be mask, and using wet processing etching removal metal oxide layer 231 figure overlay area
1 figure of sensitive material other than inoxidized metal layer material in addition, including 231 figure overlay area of removal metal oxide layer
2 material of inoxidized metal layer of region overlay other than 1 figure of surface, mesa sidewall and sensitive material of shape.
At this point, metal layer 2 at the 1 figure mesa sidewall of sensitive material, be located at 1 patterned surface of sensitive material and
1 figure of sensitive material with the metal layer 2 at exterior domain due to be not affected by oxidation interference, in wet processing using it is each to
Same sex etching can be removed easily.Remove the device part after the metal layer 2 at 1 figure mesa sidewall of sensitive material
Structure is as shown in Figure 5.
The metal layer image shown in Fig. 3, Fig. 5 be used to form metal electrode (show be metal electrode portion
Point).
Please refer to Fig. 3.Because 5 position thin metal layer 2 of contact hole, which retains region surface, is covered with metal oxide 231,
The material is insulator, therefore the electrical connection of the thin metal layer 2 needs are connected from bottom with lower metal, that is, pass through metal layer
It is located at the realization of Ti metals 21 of lower layer and being electrically connected for metal function layer 3 (such as the Al) of 2 lower layer of metal layer in 2 laminate films.
Meanwhile in order to ensure the validity of thin metal oxidation, when the thin metal using Jin Shu Jin Shudanhuawu metals is folded
23,22,21 structure of layer film, as Ti TiN Ti thin metal laminate thin film structures when, the Ti metals 21 positioned at lower layer are conducive to increase
The connection of strong entire metal layer 2 and sensitive material 1.TiN metal nitrides 22 positioned at middle level are used to form metal oxidation
When 231 figure of nitride layer, barrier oxidation process diffuses further into lower layer.Ti metals 23 positioned at upper layer are for more fully metal
Oxidation process, because Ti metals 23 are more active, conducive to TiO is formed2Metal oxide layer 231.
The metal electrode being formed on sensitive material 1 can be as shown in Figure 1.
Later, other composed structures of detector can be continuously formed on the basis of above-mentioned device architecture, and can pass through release
Technique removes sacrificial layer 4, to form the detector with micro-bridge structure on a silicon substrate.During specific production method also can refer to
Associated process steps in a kind of manufacturing method of detector disclosed in state application for a patent for invention CN102169919A.The present invention
It is without being limited thereto.
In conclusion the present invention by formed metal electrode photoresist mask graph when, in original mask
Metal electrode figure carry out transoid, so that metal electrode graphics field is become opaque be opened from light transmission and is exposed, and revealing
The layer on surface of metal gone out forms metal oxide layer pattern, and so as to be mask using the metal oxide layer pattern, use is wet
Inoxidized metal layer material other than method technique etching removal metal oxide layer pattern overlay area so that form detector
The technique of metal electrode becomes easy control and realization.
Above-described to be merely a preferred embodiment of the present invention, the embodiment is not to be protected to limit the patent of the present invention
Range, therefore equivalent structure variation made by every specification and accompanying drawing content with the present invention are protected, similarly should be included in
In protection scope of the present invention.
Claims (10)
1. a kind of metal electrode forming method of detector, which is characterized in that include the following steps：
Step S01：The panel detector structure that one surface has formed sensitive material layer pattern is provided；
Step S02：The deposited metal layer on the sensitive material, by the surface of sensitive material layer pattern, mesa sidewall and its
Region overlay other than figure；
Step S03：Photoetching offset plate figure is formed on the metal layer, and makes the layer on surface of metal for needing to form metal electrode figure
Expose in region；
Step S04：Metal oxide layer pattern is formed in the layer on surface of metal of exposing；
Step S05：Remove photoetching offset plate figure；
Step S06：Using metal oxide layer pattern as mask, the metal layer other than metal oxide layer pattern overlay area is removed
Material, to form metal electrode.
2. the metal electrode forming method of detector according to claim 1, which is characterized in that in step S03, by
Photoresist layer is formed on the metal layer, and sets the metal electrode figure in mask to opaque patterns, in light
After quarter, the photoetching offset plate figure that metal electrode graphics field is opened is formed on the metal layer.
3. the metal electrode forming method of detector according to claim 1, which is characterized in that in step S04, using O2
Plasma handles the layer on surface of metal of exposing, to form metal oxide layer pattern in the layer on surface of metal of exposing.
4. the metal electrode forming method of detector according to claim 1, which is characterized in that in step S04, use is low
The mode of energy ion implanting O, handles the layer on surface of metal of exposing, to form metal oxidation in the layer on surface of metal of exposing
Nitride layer figure.
5. the metal electrode forming method of detector according to any one of claims 1-4, which is characterized in that the gold
Category layer is the laminate film of metal, metal nitride, metal.
6. the metal electrode forming method of detector according to claim 5, which is characterized in that the metal layer laminate is thin
In film, the metal positioned at upper layer is used to form metal oxide layer, positioned at lower layer metal for enhance entire metal layer with it is quick
Feel the connection of material layer, the metal nitride for being located at middle level is used for when forming metal oxide layer pattern, barrier oxidation process
Diffusion to lower layer.
7. the metal electrode forming method of detector according to claim 6, which is characterized in that pass through the metal stacking
It is located at the metal realization of lower layer and being electrically connected for the metal function layer of metal layer lower layer in layer film.
8. the metal electrode forming method of detector according to claim 1, which is characterized in that in step S05, use is wet
Method technique removes photoetching offset plate figure.
9. the metal electrode forming method of detector according to claim 1, which is characterized in that in step S06, with metal
Oxide skin(coating) figure is mask, and using not oxidised other than wet processing etching removal metal oxide layer pattern overlay area
Metal layer material.
10. the metal electrode forming method of detector according to claim 9, which is characterized in that removal metal oxide
Inoxidized metal layer material includes quick other than removal metal oxide layer pattern overlay area other than layer pattern overlay area
Feel the inoxidized metal layer material of region overlay other than surface, mesa sidewall and the sensitive material layer pattern of material layer pattern
Material.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810310467.4A CN108640080B (en) | 2018-04-09 | 2018-04-09 | Method for forming metal electrode of detector |
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|---|---|---|---|
| CN201810310467.4A CN108640080B (en) | 2018-04-09 | 2018-04-09 | Method for forming metal electrode of detector |
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Cited By (1)
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| CN109683334A (en) * | 2019-01-16 | 2019-04-26 | 南方科技大学 | A kind of transmission-type beam splitter and its manufacturing method |
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| CN108640080B (en) | 2020-10-02 |
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