CN108573983A - Optical detector and preparation method thereof, fingerprint Identification sensor, display device - Google Patents
Optical detector and preparation method thereof, fingerprint Identification sensor, display device Download PDFInfo
- Publication number
- CN108573983A CN108573983A CN201710144824.XA CN201710144824A CN108573983A CN 108573983 A CN108573983 A CN 108573983A CN 201710144824 A CN201710144824 A CN 201710144824A CN 108573983 A CN108573983 A CN 108573983A
- Authority
- CN
- China
- Prior art keywords
- electrode
- layer
- optical detector
- active layer
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 65
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 238000006243 chemical reaction Methods 0.000 claims abstract description 49
- 238000009413 insulation Methods 0.000 claims abstract description 44
- 238000010276 construction Methods 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 26
- 239000007772 electrode material Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 16
- 238000000059 patterning Methods 0.000 claims description 14
- 230000005611 electricity Effects 0.000 claims description 6
- 230000005693 optoelectronics Effects 0.000 claims description 5
- 230000005622 photoelectricity Effects 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000011149 active material Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Multimedia (AREA)
- Manufacturing & Machinery (AREA)
- Human Computer Interaction (AREA)
- Theoretical Computer Science (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Image Input (AREA)
Abstract
The present invention provides a kind of optical detectors, including：The stepped construction of the first electrode, photoelectric conversion layer, second electrode, the first insulating layer and third electrode that are cascading；Optical detector further includes：Active layer, gate insulation layer and grid；First electrode or second electrode are as one in source electrode and drain electrode；Third electrode is as another in source electrode and drain electrode；Gate insulation layer is arranged on active layer；Grid is arranged on gate insulation layer.The present invention also provides a kind of preparation method, fingerprint Identification sensor, the display devices of above-mentioned optical detector.The present invention can improve the photosensitive area area of optical detector, so as to improve the sensitivity of optical detector.
Description
Technical field
The invention belongs to display technology fields, and in particular to a kind of optical detector and preparation method thereof, fingerprint recognition pass
Sensor, display device.
Background technology
Currently, such as X-ray detectors and for the optical detector in the sensor of fingerprint recognition to detectivity
It is more demanding, in particular, being integrated in the optical detector of TFT-LCD display screens, more particularly, it is integrated in the TFT-LCD of high PPI
The optical finger print detector of display screen.The detectivity of optical detector is more demanding, also requires to have larger photosensitive
Area's area also requires the array residing for it to have larger aperture opening ratio in other words.
TFT switch and photoelectric conversion unit (for example, photodiode), and TFT switch are generally included in optical detector
Source electrode be connected with the anode of photodiode.Existing optical detector is found in practical applications：Photodiode and TFT
Often occupied area is larger for switch, this results in the reduction of photosensitive area area, so that the sensitivity of optical detector cannot reach
To requirement.
Invention content
The present invention is directed at least solve one of the technical problems existing in the prior art, it is proposed that a kind of optical detector and
Preparation method, fingerprint Identification sensor, display device can improve the photosensitive area area of optical detector, so as to carry
High optics detector sensitivity.
One of in order to solve the above problem, the present invention provides a kind of optical detectors, including：It from top to bottom stacks gradually and sets
The stepped construction of the first electrode, photoelectric conversion layer, second electrode, the first insulating layer and third electrode set；The optical detection
Device further includes：Active layer, gate insulation layer and grid；Wherein the one of the active layer and the first electrode and the second electrode
A connection, the active layer are also connect with third electrode；The gate insulation layer setting is on the active layer；The grid setting
On the gate insulation layer.
Preferably, the active layer is electrically connected with the first electrode and the third electrode；The optical detector is also
Including：Second insulating layer is arranged between the active layer and the photoelectric conversion layer, the second electrode.
Preferably, the side wall in the side wall and the second electrode of the photoelectric conversion layer is arranged in the second insulating layer
On；The active layer is formed in top surface edge region, the second insulating layer and the third electrode of the first electrode
On.
Preferably, the active layer is electrically connected with the second electrode and the third electrode, and the active layer is formed in
The side wall of the second electrode, first insulating layer side wall and the third electrode on.
Preferably, the active layer, the gate insulation layer and described are both provided in the opposite sides of the stepped construction
Grid.
The present invention also provides a kind of preparation methods of optical detector, include the following steps：
S1 prepares the first electrode being cascading, photoelectric conversion layer, second electrode, the first insulating layer on substrate
With third electrode；
S2, prepares active layer, and active layer is electrically connected with the first electrode and the third electrode and turns with the photoelectricity
Change layer and the second electrode insulation set；
S3 prepares gate insulation layer on the active layer；
S4 prepares grid on the gate insulation layer.
Preferably, step S2 includes：
It is formed with second insulating layer on the side wall of the photoelectric conversion layer and the side wall of the second electrode；
Described in being formed on the top surface edge region of the first electrode, the second insulating layer and the third electrode
Active layer.
Preferably, third electrode material layer, the first insulating layer material layer, second electrode material are formed over the substrate
Layer, photoelectric conversion material layer and first electrode material layer form the third electrode, the first insulation using a patterning processes
Layer, second electrode, photoelectric conversion layer and first electrode.
The present invention also provides the preparation methods of another optical detector, include the following steps：
S1 prepares the first electrode being cascading, photoelectric conversion layer, second electrode, the first insulating layer on substrate
With third electrode；
S2, prepares active layer, the active layer be electrically connected with the second electrode and the third electrode and with the light
Electric conversion layer and the first electrode insulation set；
S3 prepares gate insulation layer on the active layer；
S4 prepares grid on the gate insulation layer.
Preferably, the step S2 includes：
It is formed on the side wall of the second electrode, the side wall of first insulating layer and the third electrode described active
Layer.
Preferably, third electrode material layer, the first insulating layer material layer, second electrode material are formed over the substrate
Layer, photoelectric conversion material layer and first electrode material layer form the third electrode, the first insulation using a patterning processes
Layer, second electrode, photoelectric conversion layer and first electrode.
The present invention also provides a kind of fingerprint Identification sensors, including above-mentioned optical detector provided by the invention.
The present invention also provides a kind of display devices, including above-mentioned fingerprint Identification sensor provided by the invention.
The invention has the advantages that：
In the present invention, optical detector include the first electrode being cascading, photoelectric conversion layer, second electrode,
The stepped construction of first insulating layer and third electrode, in the case where active layer is electrically connected with first electrode and third electrode, layer
Source-drain electrode of the first electrode and third electrode of folded setting as TFT switch；In active layer and second electrode and third electrode electricity
In the case of connection, the source-drain electrode of the second electrode and third electrode that are stacked as TFT switch.Therefore due to same perpendicular
Histogram overlaps the source-drain electrode of photoelectric conversion unit and TFT switch upwards, it is thereby possible to reduce the two occupied area is big
It is small, thus the photosensitive area area of optical detector can be improved, so as to improve the sensitivity of optical detector.
Description of the drawings
Fig. 1 a are the structural schematic diagram for the optical detector that the embodiment of the present invention 1 provides；
Fig. 1 b are the functional block diagram of optical detector shown in Fig. 1 a；
Fig. 2 is the structural schematic diagram for the optical detector that the embodiment of the present invention 2 provides；
Fig. 3 is the flow chart of the preparation method for the optical detector that the embodiment of the present invention 3 provides；
Fig. 4 a~4f are after the different step of the preparation method for the optical detector that the embodiment of the present invention 3 provides is completed
State of the art schematic diagram；
Fig. 5 is the flow chart of the preparation method for the optical detector that the embodiment of the present invention 4 provides；
Reference numeral includes：1, first electrode；2, photoelectric conversion layer；3, second electrode；4, the first insulating layer；5, third electricity
Pole；6, active layer；7, gate insulation layer；8, grid；9, second insulating layer.
Specific implementation mode
To make those skilled in the art more fully understand technical scheme of the present invention, come below in conjunction with the accompanying drawings to the present invention
Optical detector of offer and preparation method thereof, fingerprint Identification sensor, display device are described in detail.
Embodiment 1
Fig. 1 a are the structural schematic diagram for the optical detector that the embodiment of the present invention 1 provides；Fig. 1 b are optics shown in Fig. 1 a
The functional block diagram of detector；A and Fig. 1 b are please referred to Fig.1, the optical detector that the embodiment of the present invention 1 provides includes：It stacks gradually
The first electrode 1 of setting, the stepped construction of photoelectric conversion layer 2, second electrode 3, the first insulating layer 4 and third electrode 5；The optics
Detector further includes active layer 6, gate insulation layer 7 and grid 8.
Wherein, two working electrodes of first electrode 1 and second electrode 3 as photoelectric conversion layer 2, and first electrode 1 is made
To enter optoelectronic pole, it is so-called enter optoelectronic pole refer to optical signal incidence electrode, first electrode 1 is usually that optical signal can be allowed incident
Transparent electrode.That is, first electrode 1, photoelectric conversion layer 2 and second electrode 3 are formed as photoelectric conversion unit.
Wherein, first electrode 1 and third electrode 5 respectively as one in source electrode and drain electrode and another；Gate insulation layer 7
It is arranged on active layer 6；Grid 8 is arranged on gate insulation layer 7.
Specifically, active layer 6 is electrically connected with first electrode 1 and third electrode 5；Optical detector further includes：Second insulation
Layer 9, second insulating layer are arranged between the active layer and the photoelectric conversion layer, the second electrode.
More specifically, as shown in Figure 1a, second insulating layer 9 is arranged in the side of the side wall and second electrode 3 of photoelectric conversion layer 2
On wall；Active layer 6 is formed on top surface edge region, second insulating layer 9 and the third electrode 5 of first electrode 1, in this way, can
So that active layer 6 be electrically connected with first electrode 1 and third electrode 5 and with 3 insulation set of photoelectric conversion layer 2 and second electrode.
In addition, the opposite sides (left and right sides in such as Fig. 1 a) in stepped construction is both provided with active layer 6, gate insulation layer
7 and grid 8.
In the present embodiment, due to first electrode 1, photoelectric conversion layer 2, second electrode 3, the first insulating layer 4 and third electricity
Pole 5 is cascading, source-drain electrode of the first electrode 1 and third electrode 5 being stacked as TFT switch, i.e., same perpendicular
Histogram overlaps the source-drain electrode of photoelectric conversion unit and TFT switch upwards, it is thereby possible to reduce the two occupied area is big
It is small, thus the photosensitive area area of optical detector can be improved, so as to improve the sensitivity of optical detector.
Embodiment 2
Fig. 2 is the structural schematic diagram for the optical detector that the embodiment of the present invention 2 provides；Referring to Fig. 2, the embodiment of the present invention
The optical detector that 2 optical detectors provided and embodiment 1 provide is similar, equally includes first electrode 1, photoelectric conversion layer
2, second electrode 3, the first insulating layer 4, third electrode 5, active layer 6, gate insulation layer 7 and grid 8, due to respective positions relationship
It is described in detail with acting in above-described embodiment 1 to have had, details are not described herein.
The distinctive points of the present embodiment and above-described embodiment 1 are only described below.In the present embodiment, second electrode 3 and third
Electrode 5 respectively as one in source electrode and drain electrode and another.Specifically, as shown in Fig. 2, active layer 6 and second electrode 3 and
Third electrode 5 is electrically connected, and active layer 6 is formed on the side wall and third electrode 5 of the side wall of second electrode 3, the first insulating layer 4,
In this way, active layer 6 and 1 insulation set of photoelectric conversion layer 2 and first electrode can be made.
In the present embodiment, due to first electrode 1, photoelectric conversion layer 2, second electrode 3, the first insulating layer 4 and third electricity
Pole 5 is cascading, source-drain electrode of the second electrode 3 and third electrode 5 being stacked as TFT switch, i.e., same perpendicular
Histogram overlaps the source-drain electrode of photoelectric conversion unit and TFT switch upwards, it is thereby possible to reduce the two occupied area is big
It is small, thus the photosensitive area area of optical detector can be improved, so as to improve the sensitivity of optical detector.
Embodiment 3
Fig. 3 is the flow chart of the preparation method for the optical detector that the embodiment of the present invention 3 provides.Referring to Fig. 3, this implementation
The preparation method for the optical detector that example provides, includes the following steps：
S1 prepares the first electrode being cascading, photoelectric conversion layer, second electrode, the first insulating layer on substrate
With third electrode.
S2, prepares active layer, and active layer is electrically connected and photoelectric conversion layer and second electrode with first electrode and third electrode
Insulation set；
S3 prepares gate insulation layer on active layer.
S4 prepares grid on gate insulation layer.
Above-mentioned steps S1 is specifically including but not limited to：
Third electrode material layer, the first insulating layer material layer, second electrode material layer, opto-electronic conversion material are formed on substrate
The bed of material and first electrode material layer form the third electrode, the first insulating layer, second electrode, light using a patterning processes
Electric conversion layer and first electrode.
Above-mentioned steps S1 in practical applications can also be in the following ways：One layer of third electrode material is formed on substrate
Layer (using including but not limited to sputtering Sputter technologies), then (including but not limited to expose wet etching using patterning processes
Photo wet etch technologies) the third electrode material layer is formed as into third electrode 5, as shown in fig. 4 a, wherein so-called exposure
Wet etching refers to first in the material layer of pre-formed figure forming photoresist, and using mask plate, (mask plate has and need to form figure
The corresponding pattern of shape) photoresist is exposed and is developed, then required figure is obtained by wet etching.Wherein, third electricity
Pole material layer includes but not limited to Mo material layers.
Then, one layer of first insulating layer material layer is formed on the substrate with third electrode 5 (to use and include but not limited to
Plasma enhanced chemical vapor deposition Pecvd technologies), then (including but not limited to expose dry etching using patterning processes
Photo dry etch technologies) by the first insulating layer material layer the first insulating layer 4 of formation, as shown in Figure 4 b, wherein so-called exposure
Light dry etching refers to forming photoresist in the material layer of pre-formed figure, using mask plate (mask plate have need to form figure
The corresponding pattern of shape) photoresist is exposed and is developed, then required figure is obtained by dry etching.
Then, one layer of second electrode material layer is formed on the substrate with the first insulating layer 4, it should using patterning processes
Second electrode material layer forms the second electrode 3, as illustrated in fig. 4 c.Detailed process is similar to the process of third electrode 5 is formed,
This will not be detailed here.
Then, (it includes but not limited to adopt to use to one layer of photoelectric conversion material layer of formation on the substrate with second electrode 3
With plasma enhanced chemical vapor deposition Pecvd technologies), then using patterning processes (including but not limited to using development wet method
Etch photo wet etch technologies) the photoelectric conversion material layer is formed as into photoelectric conversion layer 2.
Then, one layer of first electrode material layer is formed on the substrate with photoelectric conversion layer 2 (to use and include but not limited to
Sputter Sputter technologies), then using patterning processes (using including but not limited to development dry etching photo dry etch skills
Art) the first electrode material layer is formed as into first electrode 1, as shown in figure 4d.
In addition, step S2 includes：It is formed with the second insulation on the side wall of photoelectric conversion layer 2 and the side wall of second electrode 3
Layer 9, as shown in fig 4e；Active layer is formed on the top surface edge region of first electrode 1, second insulating layer and third electrode 5
6.The step may be implemented active layer 6 be electrically connected with first electrode 1 and third electrode 5 it is exhausted with photoelectric conversion layer 2 and second electrode 3
Edge is arranged.
Step S2 includes but not limited to specifically following steps：
One layer of second insulation material layer is formed on the substrate with first electrode 1, and (use includes but not limited to use etc.
Gas ions enhance chemical vapor deposition Pecvd technologies), using patterning processes, (including but not limited to develop dry etching photo
Dry etch technologies) second insulation material layer is formed as into second insulating layer 9.
One layer of active material is formed on the substrate with second insulating layer 9 (using including but not limited to sputtering
Sputter technologies), it will (using including but not limited to development dry etching photo dry etch technologies) using patterning processes
The active material is formed as active layer 6.
Step S3 is specifically including but not limited to following steps：
One layer is formed on the substrate of specific active layer 6 has gate insulation layer (using including but not limited to plasma
Enhance chemical vapor deposition Pecvd technologies), using patterning processes (using including but not limited to development wet etching photo wet
Etch technologies) there is gate insulation layer to be formed as gate insulation layer 7 this, as shown in fig. 4f.Wherein, gate insulation layer include but
It is not limited to silica (SiO2) material layer.
Step S4 is specifically including but not limited to following steps：
One layer is formed on the substrate with gate insulation layer 7 has gate material layers (using including but not limited to Sputter skills
Art), this there is into grid (using including but not limited to development wet etching photo wet etch technologies) using patterning processes
Material layer is formed as grid 8, final as shown in Figure 2.Wherein, gate material layers include but not limited to Mo material layers.
Embodiment 4
Fig. 5 is the flow chart of the preparation method for the optical detector that the embodiment of the present invention 4 provides.Referring to Fig. 5, this implementation
The preparation method for the optical detector that example provides is similar with the preparation method of optical detector that above-described embodiment 3 provides, together
Sample includes step S1~step S4, since step S1~step S4 has had been described in detail in above-described embodiment 3, herein
It repeats no more.
The difference of the present embodiment and above-described embodiment 3 is only described below.Specifically, in the present embodiment, prepared by step S2
Active layer, active layer are electrically connected with second electrode and third electrode, and with photoelectric conversion layer and first electrode insulation set.
More specifically, step S2 includes：On the side wall of second electrode 3, the side wall and third electrode 5 of the first insulating layer 4
Active layer 6 is formed, as shown in Figure 3.
Embodiment 5
The embodiment of the present invention provides a kind of fingerprint Identification sensor, including the optics that the above embodiment of the present invention 1 and 2 provides
Detector.
Fingerprint Identification sensor provided in an embodiment of the present invention, since it includes what the above embodiment of the present invention 1 and 2 provided
Optical detector, it is thus possible to improve the accuracy of fingerprint recognition.
Embodiment 6
The embodiment of the present invention provides a kind of display device, and the fingerprint recognition for being integrated with the offer of the above embodiment of the present invention 5 passes
Sensor.
Display device provided in an embodiment of the present invention, since it includes the fingerprint recognition that the above embodiment of the present invention 5 provides
Sensor, it is thus possible to improve the accuracy of fingerprint recognition
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, in the essence for not departing from the present invention
In the case of refreshing and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (13)
1. a kind of optical detector, which is characterized in that including：The first electrode that is cascading, photoelectric conversion layer, the second electricity
Pole, the first insulating layer and third electrode stepped construction；The optical detector further includes：Active layer, gate insulation layer and grid；
The active layer is connect with one of the first electrode and the second electrode, and the active layer is also electric with third
Pole connects；
The gate insulation layer setting is on the active layer；
The grid is arranged on the gate insulation layer.
2. optical detector according to claim 1, which is characterized in that the active layer and the first electrode and described
Third electrode is electrically connected；
The optical detector further includes：
Second insulating layer is arranged between the active layer and the photoelectric conversion layer, the second electrode.
3. optical detector according to claim 2, which is characterized in that the second insulating layer setting turns in the photoelectricity
It changes on the side wall of layer and the side wall of the second electrode；
The active layer is formed in top surface edge region, the second insulating layer and the third electrode of the first electrode
On.
4. optical detector according to claim 1, which is characterized in that the active layer and the second electrode and described
Third electrode is electrically connected, and the active layer is formed in the side wall of the second electrode, the side wall of first insulating layer and described
On third electrode.
5. optical detector according to claim 1, which is characterized in that be respectively provided in the opposite sides of the stepped construction
There are the active layer, the gate insulation layer and the grid.
6. a kind of preparation method of optical detector, which is characterized in that include the following steps：
S1 prepares the first electrode being cascading, photoelectric conversion layer, second electrode, the first insulating layer and on substrate
Three electrodes；
S2, prepares active layer, and the active layer is electrically connected with the first electrode and the third electrode and turns with the photoelectricity
Change layer and the second electrode insulation set；
S3 prepares gate insulation layer on the active layer；
S4 prepares grid on the gate insulation layer.
7. the preparation method of optical detector according to claim 6, which is characterized in that step S2 includes：
Second insulating layer is formed on the side wall of the photoelectric conversion layer and the side wall of the second electrode；
It is formed on the top surface edge region of the first electrode, the second insulating layer and the third electrode described active
Layer.
8. the preparation method of optical detector according to claim 6, which is characterized in that the step S1 includes：
Third electrode material layer, the first insulating layer material layer, second electrode material layer, opto-electronic conversion material are formed over the substrate
The bed of material and first electrode material layer form the third electrode, the first insulating layer, second electrode, light using a patterning processes
Electric conversion layer and first electrode.
9. a kind of preparation method of optical detector, which is characterized in that include the following steps：
S1 prepares the first electrode being cascading, photoelectric conversion layer, second electrode, the first insulating layer and on substrate
Three electrodes；
S2, prepares active layer, and the active layer is electrically connected with the second electrode and the third electrode and turns with the photoelectricity
Change layer and the first electrode insulation set；
S3 prepares gate insulation layer on the active layer；
S4 prepares grid on the gate insulation layer.
10. the preparation method of optical detector according to claim 9, which is characterized in that the step S2 includes：
The active layer is formed on the side wall of the second electrode, the side wall of first insulating layer and the third electrode.
11. the preparation method of optical detector according to claim 9, which is characterized in that the step S1 includes：
Third electrode material layer, the first insulating layer material layer, second electrode material layer, opto-electronic conversion material are formed over the substrate
The bed of material and first electrode material layer form the third electrode, the first insulating layer, second electrode, light using a patterning processes
Electric conversion layer and first electrode.
12. a kind of fingerprint Identification sensor, which is characterized in that including the optical detector described in claim 1-5 any one.
13. a kind of display device, which is characterized in that including the fingerprint Identification sensor described in claim 12.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710144824.XA CN108573983B (en) | 2017-03-13 | 2017-03-13 | Optical detector and preparation method thereof, fingerprint identification sensor and display device |
| EP17832176.6A EP3596749B8 (en) | 2017-03-13 | 2017-09-05 | Optical detector, fabrication method thereof, fingerprint recognition sensor, and display device |
| PCT/CN2017/100462 WO2018166148A1 (en) | 2017-03-13 | 2017-09-05 | Optical detector, fabrication method thereof, fingerprint recognition sensor, and display device |
| US15/745,048 US10496868B2 (en) | 2017-03-13 | 2017-09-05 | Optical detector, fabrication method thereof, fingerprint recognition sensor, and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710144824.XA CN108573983B (en) | 2017-03-13 | 2017-03-13 | Optical detector and preparation method thereof, fingerprint identification sensor and display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108573983A true CN108573983A (en) | 2018-09-25 |
| CN108573983B CN108573983B (en) | 2021-08-17 |
Family
ID=63521788
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710144824.XA Active CN108573983B (en) | 2017-03-13 | 2017-03-13 | Optical detector and preparation method thereof, fingerprint identification sensor and display device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10496868B2 (en) |
| EP (1) | EP3596749B8 (en) |
| CN (1) | CN108573983B (en) |
| WO (1) | WO2018166148A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110534031A (en) * | 2019-08-29 | 2019-12-03 | 上海天马微电子有限公司 | A kind of display device and fingerprint identification method |
| CN113741736A (en) * | 2020-05-29 | 2021-12-03 | 京东方科技集团股份有限公司 | Sensor, display panel and display device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220031402A (en) * | 2020-09-04 | 2022-03-11 | 삼성전자주식회사 | Electronic device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6277668B1 (en) * | 2000-01-04 | 2001-08-21 | Lucent Technologies, Inc. | Optical detector for minimizing optical crosstalk |
| CN103165635A (en) * | 2013-03-12 | 2013-06-19 | 北京京东方光电科技有限公司 | Ray detector and manufacturing method thereof |
| US20140151684A1 (en) * | 2012-12-03 | 2014-06-05 | Innolux Corporation | X-ray detector |
| CN105184247A (en) * | 2015-08-28 | 2015-12-23 | 京东方科技集团股份有限公司 | Fingerprint identification member, identification method, display member and display device |
| WO2016167179A1 (en) * | 2015-04-13 | 2016-10-20 | シャープ株式会社 | Imaging panel and x-ray imaging device equipped with same |
| CN106231210A (en) * | 2016-08-23 | 2016-12-14 | 上海奕瑞光电子科技有限公司 | A kind of radioscopic image sensor and the method eliminating afterimage of image |
| US9627418B2 (en) * | 2013-12-26 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7897108B1 (en) | 2003-10-03 | 2011-03-01 | The Research Foundation Of State University Of New York | Sensor and method of sensing having an energy source and detector on the same side of a sensor substance |
| JP4934271B2 (en) * | 2004-06-11 | 2012-05-16 | 日本オプネクスト株式会社 | Single power supply optical integrated device |
| KR101789309B1 (en) * | 2009-10-21 | 2017-10-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Analog circuit and semiconductor device |
| EP2497011A4 (en) * | 2009-11-06 | 2013-10-02 | Semiconductor Energy Lab | Touch panel and driving method of touch panel |
| EP2375242A1 (en) | 2010-04-06 | 2011-10-12 | FOM Institute for Atomic and Moleculair Physics | Integrated plasmonic nanocavity sensing device |
| CN102324445A (en) | 2011-09-22 | 2012-01-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | MSM (Metal-Semiconductor-Metal) photodetector with improved structure and preparation method thereof |
| WO2014103900A1 (en) * | 2012-12-25 | 2014-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8981374B2 (en) * | 2013-01-30 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US10020403B2 (en) * | 2014-05-27 | 2018-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9685560B2 (en) * | 2015-03-02 | 2017-06-20 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, method for manufacturing transistor, semiconductor device, and electronic device |
| US9768174B2 (en) * | 2015-07-21 | 2017-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN105373772A (en) * | 2015-10-09 | 2016-03-02 | 京东方科技集团股份有限公司 | Optical fingerprint/palm print identification device, touch control display panel and display device |
| US10050152B2 (en) * | 2015-12-16 | 2018-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device, and electronic device |
| CN106022276B (en) * | 2016-05-25 | 2019-06-07 | 京东方科技集团股份有限公司 | Fingerprint recognition device and preparation method thereof, display device, display device |
| KR20180023097A (en) * | 2016-08-23 | 2018-03-07 | 삼성디스플레이 주식회사 | Display device |
-
2017
- 2017-03-13 CN CN201710144824.XA patent/CN108573983B/en active Active
- 2017-09-05 US US15/745,048 patent/US10496868B2/en active Active
- 2017-09-05 EP EP17832176.6A patent/EP3596749B8/en active Active
- 2017-09-05 WO PCT/CN2017/100462 patent/WO2018166148A1/en unknown
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6277668B1 (en) * | 2000-01-04 | 2001-08-21 | Lucent Technologies, Inc. | Optical detector for minimizing optical crosstalk |
| US20140151684A1 (en) * | 2012-12-03 | 2014-06-05 | Innolux Corporation | X-ray detector |
| CN103165635A (en) * | 2013-03-12 | 2013-06-19 | 北京京东方光电科技有限公司 | Ray detector and manufacturing method thereof |
| US9627418B2 (en) * | 2013-12-26 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2016167179A1 (en) * | 2015-04-13 | 2016-10-20 | シャープ株式会社 | Imaging panel and x-ray imaging device equipped with same |
| CN105184247A (en) * | 2015-08-28 | 2015-12-23 | 京东方科技集团股份有限公司 | Fingerprint identification member, identification method, display member and display device |
| CN106231210A (en) * | 2016-08-23 | 2016-12-14 | 上海奕瑞光电子科技有限公司 | A kind of radioscopic image sensor and the method eliminating afterimage of image |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110534031A (en) * | 2019-08-29 | 2019-12-03 | 上海天马微电子有限公司 | A kind of display device and fingerprint identification method |
| CN110534031B (en) * | 2019-08-29 | 2021-12-28 | 上海天马微电子有限公司 | Display device and fingerprint identification method |
| US11521419B2 (en) | 2019-08-29 | 2022-12-06 | Shanghai Tianma Micro-electronics Co., Ltd. | Display device and fingerprint recognition method |
| CN113741736A (en) * | 2020-05-29 | 2021-12-03 | 京东方科技集团股份有限公司 | Sensor, display panel and display device |
| CN113741736B (en) * | 2020-05-29 | 2023-12-08 | 京东方科技集团股份有限公司 | Sensor, display panel and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3596749A4 (en) | 2021-01-06 |
| US10496868B2 (en) | 2019-12-03 |
| WO2018166148A1 (en) | 2018-09-20 |
| CN108573983B (en) | 2021-08-17 |
| EP3596749B1 (en) | 2022-02-09 |
| EP3596749B8 (en) | 2022-03-23 |
| EP3596749A1 (en) | 2020-01-22 |
| US20190012508A1 (en) | 2019-01-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106684202B (en) | A kind of photosensory assembly, fingerprint recognition panel and device | |
| CN103456740B (en) | Pixel cell and manufacture method, array base palte and display unit | |
| CN108878572B (en) | Photosensitive element, photoelectric sensing detection substrate and manufacturing method thereof | |
| JP7077222B2 (en) | Manufacturing method of semiconductor devices, array substrates and semiconductor devices | |
| CN103474474B (en) | TFT and preparation method thereof, array base palte and preparation method thereof, X-ray detector | |
| JP2013502735A (en) | Single or multi-layer graphene-based photodetection device and method of forming the same | |
| US9570645B2 (en) | Photodiode and method of manufacturing the same, and X-ray detector and method of manufacturing the same | |
| WO2014127579A1 (en) | Thin film transistor array substrate, manufacturing method and display device | |
| CN108336100A (en) | A kind of array substrate and preparation method thereof, display panel, display device | |
| CN108573983A (en) | Optical detector and preparation method thereof, fingerprint Identification sensor, display device | |
| US10971636B2 (en) | Photoelectric detection structure, manufacturing method therefor, and photoelectric detector | |
| US20120037912A1 (en) | Visible sensing transistor, display panel and manufacturing method thereof | |
| WO2013143296A1 (en) | Array substrate of x-ray detection device and manufacturing method thereof | |
| CN104576523A (en) | Array substrate, production method of array substrate and display device | |
| US9881948B2 (en) | Array substrate and display apparatus containing the same, and method for fabricating the same | |
| CN109727912A (en) | A kind of embedded touch array substrate and its manufacturing method | |
| TWI389256B (en) | Method for fabricating active device array substrate | |
| TW201608442A (en) | Optoelectronic sensor array, method of fabricating optoelectronic sensor array and display device | |
| CN111192889A (en) | Photodetector module, method for manufacturing the same, and photodetector substrate | |
| CN110391308A (en) | A kind of flat panel detector and its manufacturing method | |
| WO2016180092A1 (en) | Array substrate and manufacturing method thereof, optical touch screen panel and display device | |
| US20130143350A1 (en) | Manufacture method of sensor | |
| CN103730463A (en) | Thin film transistor substrate with photoelectric detector and manufacturing method thereof | |
| WO2020062415A1 (en) | Display panel and manufacturing method therefor | |
| CN104078421A (en) | Manufacturing method of amorphous silicon photodiode substrate, substrate and semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |