CN103165635A - Ray detector and manufacturing method thereof - Google Patents
Ray detector and manufacturing method thereof Download PDFInfo
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- CN103165635A CN103165635A CN201310077728XA CN201310077728A CN103165635A CN 103165635 A CN103165635 A CN 103165635A CN 201310077728X A CN201310077728X A CN 201310077728XA CN 201310077728 A CN201310077728 A CN 201310077728A CN 103165635 A CN103165635 A CN 103165635A
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- 238000002161 passivation Methods 0.000 claims abstract description 73
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- 230000004888 barrier function Effects 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 40
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- 239000012528 membrane Substances 0.000 claims description 30
- 238000000576 coating method Methods 0.000 claims description 24
- 239000010408 film Substances 0.000 claims description 21
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
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- 239000010409 thin film Substances 0.000 claims description 4
- 230000035945 sensitivity Effects 0.000 abstract description 10
- 230000003247 decreasing effect Effects 0.000 abstract 1
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- 239000004973 liquid crystal related substance Substances 0.000 description 6
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- 238000004544 sputter deposition Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
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- 229910052738 indium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
Abstract
The invention discloses a ray detector and a manufacturing method thereof. A grid layer and an insulating layer are sequentially formed on a substrate, a photoelectric diode and a source drain layer are formed on the substrate with the insulating layer, a drain of the source drain layer is connected with the photoelectric diode, an active layer is formed on the source drain layer and contacts with the insulating layer, a first passivation layer is formed on the active layer and the source drain layer, a conductive film layer is formed on the photoelectric diode, the source drain layer and the first passivation layer, and a second passivation layer is manufactured on the conductive film layer. By the aid of the technical scheme, compared with the prior art, the ray detector has the advantages that masking frequency is decreased, production cycle is effectively shortened, production efficiency is improved, manufacturing cost is reduced, the sensitivity of the ray detector is improved, and power consumption of the ray detector is reduced.
Description
Technical field
The present invention relates to the detector technology field, relate in particular to a kind of ray detector and preparation method thereof.
Background technology
The function element of completing the image information light-to-current inversion is called photoelectric image detector (perhaps being called electro-optical imaging sensors).Plate ray detector is a kind of photoelectric image detector, is usually used in medical field.For example, plate ray detector detects and passes the X ray of human body, and the intensity distributions of X ray is shown in display with different GTG forms, can see comparatively intuitively like this result that human body detects through X ray.
Shown in Figure 1, be prior art ray detector structural representation, this ray detector comprises thin-film transistor (Thin Film Transistor, TFT) and photodiode, wherein, TFT generally includes grid, source electrode and drain electrode, has on-off action, can control the signal of telecommunication between source-drain electrode; Photodiode comprises p type semiconductor layer, intrinsic semiconductor layer and n type semiconductor layer.The operation principle of above-mentioned ray detector is: when the illumination of X ray (X-Ray) was mapped to the flash layer cesium iodide (CsI Scintillator material) of ray detector when upper, flash layer is converted into visible light with X ray, and shines on photodiode (Photo diode).When TFT was in running order, gate line was opened, and made the source-drain electrode conducting, controlled the output of the data wire of liquid crystal display drive circuit according to the output signal of photodiode; At this moment, photodiode is being under the effect of TFT under working inverse voltage, when photodiode receives the visible light of above-mentioned conversion acquisition, this visible light signal can be changed into the corresponding signal of telecommunication and export TFT to, controlled the drive circuit of above-mentioned liquid crystal display by TFT.In this drive circuit, can cause the difference of electric field due to the different signals of telecommunication, thereby cause the difference of liquid crystal molecule twist, the backlight of liquid crystal display penetrates the different liquid crystal molecule of twist, can form different pictures, X ray is converted to image information and shows the most at last.Above-mentioned ray detector She Ge is on glass substrate (Glass Substrate), and photodiode is comprised of photodiode, it is connected with the drain electrode of TFT by bottom electrode (Bottom Electrode), cause the ray detector coupling capacitance larger, ray detector sensitivity is low and power consumption is large thereby cause.
Consult shown in Figure 2ly, make ray detector in prior art and usually adopt mask (mask) technique, the steps include:
Step 200: form grid layer 2 through composition technique on glass substrate 1.
Step 210: adopt composition technique to form successively insulating barrier 3 on the glass substrate 1 that is formed with grid layer 2, a-Si layer 4, and N+a-Si layer 5, and make a-Si layer 4 and N+a-Si layer 5 patterning through composition technique.
Step 220: form source-drain electrode layer 6 on N+a-Si layer 5, form source electrode and drain electrode after patterning.
Step 230: form the first passivation layer 10 on source electrode, drain electrode and a-Si layer 4, and make the first passivation layer 10 patternings through composition technique.
Step 240: form photodiode in drain electrode, this photodiode is by p type semiconductor layer 7, intrinsic semiconductor layer 8, and n type semiconductor layer 9 forms;
Step 250: form conductive membrane layer 11 on photodiode, wherein, photodiode need to be connected with drain electrode by the electrode of its bottom.
Step 260: form the second passivation layer 12 on conductive membrane layer 11, the first passivation layer 10 and glass substrate 1, with the second adjacent passivation layer 12 of conductive membrane layer 11 on offer the first via hole, and offer the second via hole at the first passivation layer 10 De Wei adjacent with source electrode Ge.
Step 270: at the second passivation layer 12, form the first electrode 13 ' on photodiode, and form the second electrode 13 on the second passivation layer 12 and source-drain electrode layer 6 " and through the composition art pattern CAD.
Wherein, the first electrode 13 and the second electrode 13 " formation conductive membrane layer 13.In above-mentioned ray detector, the first electrode 13 ' is connected with photodiode, is used for to photodiode output services voltage, and receives the signal of telecommunication of photodiode output; The second electrode 13 ", be used for controlling liquid crystal display drive circuit and carry out the image demonstration.
Step 280: form the 3rd passivation layer 14 on conductive membrane layer 13 and the second passivation layer 12, and make the 3rd passivation layer 14 patternings through composition technique.
The 3rd passivation layer 14 is for the protection of ray detector.
This shows, make at present ray detector and need to adopt mask technique 9 times, have complex manufacturing technology, fabrication cycle is long, and production efficiency is low, and sensitivity is low, and the large problem of power consumption.
Summary of the invention
The embodiment of the present invention provides a kind of ray detector and preparation method thereof, makes the flow process complexity in order to solve the ray detector that exists in prior art, and fabrication cycle is long, and sensitivity is low, and the large problem of power consumption.
The concrete technical scheme that the embodiment of the present invention provides is as follows:
A kind of ray detector comprises:
Substrate;
Be formed on the grid layer on described substrate;
Be formed on the insulating barrier of described grid layer;
Be formed with the photodiode that forms on the substrate of described insulating barrier;
Be formed with the source-drain electrode layer that forms on the substrate of described insulating barrier, the drain electrode of described source-drain electrode layer is connected with described photodiode;
Be formed on the active layer on described source-drain electrode layer, described active layer connects described source-drain electrode layer;
Be formed on described active layer and the first passivation layer on described source-drain electrode layer, and offer via hole on described the first passivation layer;
Be formed on described photodiode, on the first passivation layer and the conductive membrane layer in described via hole.
A kind of ray detector manufacture method comprises:
Form grid layer on substrate;
Form insulating barrier being formed with on the substrate of described grid layer, and form photodiode being formed with on the substrate of described insulating barrier;
Be formed with formation source-drain electrode layer on the substrate of described insulating barrier; Make the drain electrode of described source-drain electrode layer be connected with described photodiode;
Form active layer on described source-drain electrode layer, make described active layer be connected with described insulating barrier;
Forming the first passivation layer on described active layer and on described source-drain electrode layer, and offering via hole on described the first passivation layer;
On described photodiode, on described source-drain electrode layer, and form conductive membrane layer in described via hole.
In the embodiment of the present invention, form successively grid layer and insulating barrier on substrate, and be formed with formation photodiode and source-drain electrode layer on the substrate of above-mentioned insulating barrier; Make the drain electrode of this source-drain electrode layer be connected with above-mentioned photodiode; Form active layer on above-mentioned source-drain electrode layer, make this active layer and described insulating barrier joint; Forming the first passivation layer on above-mentioned active layer and on above-mentioned source-drain electrode layer, and offering via hole on this first passivation layer; On above-mentioned photodiode, form conductive membrane layer on the first passivation layer and in above-mentioned via hole, and make the second passivation layer on conductive membrane layer.Adopt technical solution of the present invention to reduce compared to existing technology the mask number of times, effectively shortened the production cycle, improved production efficiency, reduced cost of manufacture, and improve the sensitivity of ray detector, reduced the power consumption of ray detector.
Description of drawings
Fig. 1 is prior art ray detector structural representation;
Fig. 2 is the making flow chart of prior art ray detector;
Fig. 3 is ray detector structural representation in the embodiment of the present invention;
Fig. 4 is the making flow chart of ray detector in the embodiment of the present invention;
Fig. 5 is that in the embodiment of the present invention, ray detector is made schematic flow sheet one;
Fig. 6 is that in the embodiment of the present invention, ray detector is made schematic flow sheet two;
Fig. 7 is that in the embodiment of the present invention, ray detector is made schematic flow sheet three;
Fig. 8 is that in the embodiment of the present invention, ray detector is made schematic flow sheet four;
Fig. 9 is that in the embodiment of the present invention, ray detector is made schematic flow sheet five;
Figure 10 is that in the embodiment of the present invention, ray detector is made schematic flow sheet six.
Embodiment
Make the flow process complexity in order to solve the ray detector that exists in prior art, fabrication cycle is long, and sensitivity is low, and the large problem of power consumption.
In the embodiment of the present invention, form successively grid layer and insulating barrier on substrate, and be formed with formation photodiode and source-drain electrode layer on the substrate of above-mentioned insulating barrier; Make the drain electrode of this source-drain electrode layer be connected with above-mentioned photodiode; Form active layer on above-mentioned source-drain electrode layer, make this active layer contact with described insulating barrier; Forming the first passivation layer on above-mentioned active layer and on above-mentioned source-drain electrode layer, and offering via hole on this first passivation layer; On above-mentioned photodiode, form conductive membrane layer on the first passivation layer and in above-mentioned via hole, and make the second passivation layer on conductive membrane layer.Adopt technical solution of the present invention to reduce compared to existing technology the mask number of times, effectively shortened the production cycle, improved production efficiency, reduced cost of manufacture, and improve the sensitivity of ray detector, reduced the power consumption of ray detector.
In the embodiment of the present invention, ray detector can be the bottom gate type ray detector, also can be the top gate type ray detector, and the below is elaborated to the preferred embodiment of the present invention by reference to the accompanying drawings take the bottom gate type ray detector as example.
Consult Fig. 3, structural representation for ray detector in the embodiment of the present invention, this ray detector comprises substrate 1, grid layer 2, insulating barrier 3, active layer 4, source-drain electrode layer 6, the first passivation layer 10, conductive membrane layer 11, the second passivation layer 12, and the photodiode 15 that is consisted of by p type semiconductor layer 7, intrinsic semiconductor layer 8 and n type semiconductor layer 9, wherein:
Insulating barrier 3 covers on the substrate 1 that is formed with grid layer 2;
The first passivation layer 10 is formed on active layer 4 and source-drain electrode layer 6;
Offer via hole at the first passivation layer 10 De Wei adjacent with source electrode Ge;
In addition, this X-ray detection X Zhuan Ge also comprises the second passivation layer 12, is formed on conductive membrane layer 11, and contacts with the first passivation layer 10 by the discontinuous part on conductive membrane layer 11.
Wherein, above-mentioned insulating barrier 3 can be for silicon nitride layer or silicon oxide layer, and better, the employing silicon nitride layer is as insulating barrier 3; The first passivation layer 10 and the second passivation layer 12 are silicon nitride layer or silicon oxide layer.
Above-mentioned photodiode 15 comprises p type semiconductor layer 7, intrinsic semiconductor layer 8 and n type semiconductor layer 9.Wherein, above-mentioned semiconductor layer can be amorphous silicon layer or germanium layer; And p type semiconductor layer 7 is positioned on insulating barrier 3, and intrinsic semiconductor layer 8 is positioned on p type semiconductor layer 7, and n type semiconductor layer 9 is positioned on intrinsic semiconductor layer 8.Consult Fig. 3 as can be known, photodiode 15 needn't be connected with drain electrode by bottom electrode, can be directly be connected with drain electrode in source-drain electrode layer 6, thereby reduced the coupling capacitance between photodiode 15 and drain electrode, in the sensitivity that improves ray detector, reduced the power consumption of ray detector.Based on technique scheme, in conjunction with shown in Figure 4, in the embodiment of the present invention, the detailed step of making ray detector is:
Step 400: form grid layer 2 on substrate 1.
Consult shown in Figure 5ly, adopt coating process, deposition one deck conductive film layer on substrate 1 adopts composition technique to form the figure that comprises grid layer 2 on this conductive film layer.Be specially: apply one deck photoresist layer, adopt mask technique to carry out exposure imaging to this substrate 1, and after adopting the wet etching technology to carry out etching to the above-mentioned substrate 1 that deposits conductive film layer, peel off above-mentioned photoresist layer, can form grid layer 2 and public electrode 2 ' on substrate 1.
In the embodiment of the present invention, above-mentioned coating process can be sputter (Sputter) technique or gas ions enhancing chemical vapour deposition technique (being called for short PECVD) technique etc.Above-mentioned conductive film layer can be for metal film layer or metal-oxide film layer, and better, this conductive film layer is molybdenum layer.
Step 410: form insulating barrier 3 on the substrate 1 that is formed with grid layer 2 and public electrode 2 ', and form photodiode 15 on the substrate 1 that is formed with insulating barrier 3.
Consult Fig. 6, in the embodiment of the present invention, the process that forms insulating barrier 3 and photodiode 15 is: adopt coating process, deposition one layer insulating 3 on the substrate 1 that is formed with grid layer 2 and public electrode 2 ', and deposit successively p type semiconductor layer 7 on the insulating barrier 3 on public electrode 2 ', intrinsic semiconductor layer 8 and n type semiconductor layer 9.And adopt composition technique to obtain photodiode 15; Better, above-mentioned coating process is pecvd process.
Wherein, insulating barrier 3 can be for silicon nitride layer or silicon oxide layer, and better, the employing silicon nitride layer is as insulating barrier 3.
Step 420: form source-drain electrode layer 6 on the substrate 1 that is formed with insulating barrier 3.
Consult shown in Figure 7ly, in the embodiment of the present invention, the process that forms source-drain electrode layer 6 is: adopt coating process to form conductive film layer on the insulating barrier 3 that is formed with grid layer 2, adopt composition technique to form the figure that comprises source-drain electrode layer 6 to this conductive film layer.
Wherein, the p type semiconductor layer 7 of photodiode directly is connected with the drain electrode of source-drain electrode layer 6, photodiode 15 is connected with the drain electrode of source-drain electrode layer 6, thereby reduced the coupling capacitance between photodiode 15 and drain electrode, improve the sensitivity of ray detector, reduced simultaneously the power consumption of ray detector.
Step 430: form active layer 4 on source-drain electrode layer 6.
Consult shown in Figure 8ly, in the embodiment of the present invention, the process that forms active layer 4 is: adopt coating process, form oxide skin(coating) on source-drain electrode layer 6, adopt composition technique to form the figure that comprises active layer 4 to this oxide skin(coating).
Better, above-mentioned oxide skin(coating) is indium gallium zinc oxide layer; Above-mentioned coating process is sputtering technology.
Step 440: form the first passivation layer 10 on active layer 4 and source-drain electrode layer 6, and offer via hole at the first passivation layer 10 De Wei adjacent with source electrode Ge.
Consult shown in Figure 9ly, in the embodiment of the present invention, the process that forms the first passivation layer 10 is: adopt coating process, forming the first passivation layer film on active layer 4 and on source-drain electrode layer 6, and adopting composition technique to form via hole to the first passivation layer film.
Better, above-mentioned coating process is sputtering technology.
Step 450: form conductive membrane layer 11 on photodiode 15 and the first passivation layer 10 and in via hole.
Better, above-mentioned conductive membrane layer 11 comprises that the first electrode 11 ' and the second electrode are 11 ".Form the first electrode 11 ' on photodiode 15 and the first passivation layer 10, form the second electrode 11 in the first passivation layer 10 and via hole ".
Consult shown in Figure 10, in the embodiment of the present invention, the process that forms conductive membrane layer 11 is: adopt coating process, form conductive film layer in photodiode 15, the first passivation layer 10 and via hole, adopt composition technique to form the figure that comprises conductive membrane layer 11 to this conductive film layer.Wherein, the first passivation layer 10 is silicon nitride or silicon oxide layer.
Better, above-mentioned coating process is sputtering technology.
Step 460: form the second passivation layer 12 on conductive membrane layer 11.
In the embodiment of the present invention, adopt coating process, form the second passivation layer film on conductive membrane layer 11, and adopt composition technique to form the figure that comprises the second passivation layer 12 to the second passivation layer film.The second passivation layer 12 is silicon nitride layer or silicon oxide layer.
Better, above-mentioned coating process is pecvd process.
In sum, in the embodiment of the present invention, form successively grid layer and insulating barrier on substrate, and be formed with formation photodiode and source-drain electrode layer on the substrate of above-mentioned insulating barrier; Make the drain electrode of this source-drain electrode layer be connected with above-mentioned photodiode; Form active layer on above-mentioned source-drain electrode layer, make this active layer contact with described insulating barrier; Form the first passivation layer on above-mentioned active layer and on above-mentioned source-drain electrode layer, and offering via hole at the first passivation layer 10 De Wei adjacent with source electrode Ge; On above-mentioned photodiode, and the first passivation layer, and form conductive membrane layer in via hole, and make the second passivation layer on conductive membrane layer.Adopt technical solution of the present invention to reduce compared to existing technology the mask number of times, effectively shortened the production cycle, improved production efficiency, reduced cost of manufacture, and because photodiode directly is connected with drain electrode, reduce the coupling capacitance between photodiode and drain electrode, in the sensitivity that improves ray detector, reduced the power consumption of ray detector.
Obviously, those skilled in the art can carry out various changes and modification and not break away from the spirit and scope of the embodiment of the present invention the embodiment of the present invention.Within if these of the embodiment of the present invention are revised and modification belongs to the scope of claim of the present invention and equivalent technologies thereof, the present invention also is intended to comprise these changes and modification interior.
Claims (11)
1. a ray detector, is characterized in that, comprising:
Substrate;
Be formed on the grid layer on described substrate;
Be formed on the insulating barrier on described grid layer;
Be formed with the photodiode that forms on the substrate of described insulating barrier;
Be formed with the source-drain electrode layer that forms on the substrate of described insulating barrier, the drain electrode of described source-drain electrode layer is connected with described photodiode;
Be formed on the active layer on described source-drain electrode layer, described active layer connects described source-drain electrode layer;
Be formed on described active layer and the first passivation layer on described source-drain electrode layer, and offer via hole on described the first passivation layer;
Be formed on described photodiode, on the first passivation layer and the conductive membrane layer in described via hole.
2. ray detector as claimed in claim 1, it is characterized in that, described photodiode comprises the p type semiconductor layer that is formed on described insulating barrier, is formed at the intrinsic semiconductor layer on described p type semiconductor layer, and is formed at the n type semiconductor layer on described intrinsic semiconductor layer.
3. ray detector as claimed in claim 2, is characterized in that, the p type semiconductor layer of described photodiode is connected with the drain electrode of described source-drain electrode layer.
4. as claim 1,2 or 3 described ray detectors, it is characterized in that, described ray detector also comprises the second passivation layer that is formed on described conductive membrane layer.
5. a ray detector manufacture method, is characterized in that, comprising:
Form grid layer on substrate;
Form insulating barrier being formed with on the substrate of described grid layer, and form photodiode being formed with on the substrate of described insulating barrier;
Be formed with formation source-drain electrode layer on the substrate of described insulating barrier; Make the drain electrode of described source-drain electrode layer be connected with described photodiode;
Form active layer on described source-drain electrode layer, make described active layer be connected with described insulating barrier;
Forming the first passivation layer on described active layer and on described source-drain electrode layer, and offering via hole on described the first passivation layer;
Form conductive membrane layer on described photodiode, on the first passivation layer and in described via hole.
6. method as claimed in claim 5, is characterized in that, forms insulating barrier being formed with on the substrate of described grid layer, and form photodiode being formed with on the substrate of described insulating barrier, specifically comprises:
On the substrate of described grid layer, the employing coating process forms insulating layer of thin-film being formed with;
Form successively p type semiconductor layer on the substrate of described insulating layer of thin-film being formed with, intrinsic semiconductor layer and n type semiconductor layer, described p type semiconductor layer, intrinsic semiconductor layer and n type semiconductor layer form described photodiode.
7. method as claimed in claim 5, is characterized in that, is being formed with formation source-drain electrode layer on the substrate of described insulating barrier, specifically comprises:
Being formed with employing coating process formation conductive film layer on the substrate of described insulating barrier, adopt composition technique to form the figure that comprises described source-drain electrode layer to described conductive film layer.
8. method as claimed in claim 5, is characterized in that, forms active layer on described source-drain electrode layer, makes described active layer be connected with described insulating barrier, specifically comprises:
Adopt coating process to form oxide skin(coating) on described source-drain electrode layer, adopt composition technique to form the figure that comprises described active layer on described source-drain electrode layer to described oxide skin(coating), wherein, make described active layer be connected with described insulating barrier.
9. method as claimed in claim 5, is characterized in that, forming the first passivation layer on described active layer and on described source-drain electrode layer, specifically comprises:
Adopt coating process to form the first passivation layer film on described active layer and on described source-drain electrode layer, adopting composition technique to form the figure that comprises described the first passivation layer to described the first passivation layer film.
10. method as claimed in claim 5, is characterized in that, on described photodiode, on described the first passivation layer and form conductive membrane layer in described via hole, specifically comprises:
Adopt coating process to form conductive film layer on described photodiode, on the first passivation layer and in described via hole, adopt composition technique to form the figure that comprises described conductive membrane layer to described conductive film layer; Wherein, described the first passivation layer is silicon nitride layer, perhaps silicon oxide layer.
11. as the described method of claim 5-10 any one, it is characterized in that, further comprise: adopt coating process to form the second passivation layer on described conductive membrane layer.
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| CN201310077728.XA CN103165635B (en) | 2013-03-12 | 2013-03-12 | A kind of ray detector and preparation method thereof |
| PCT/CN2013/076795 WO2014139222A1 (en) | 2013-03-12 | 2013-06-05 | Radio frequency detector and manufacturing method thereof |
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| CN201310077728.XA CN103165635B (en) | 2013-03-12 | 2013-03-12 | A kind of ray detector and preparation method thereof |
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| CN104900669A (en) * | 2015-05-28 | 2015-09-09 | 京东方科技集团股份有限公司 | X-ray detection substrate, fabrication method thereof and detection device |
| CN107342347A (en) * | 2017-07-05 | 2017-11-10 | 京东方科技集团股份有限公司 | A kind of photodetector and preparation method thereof |
| CN107431316A (en) * | 2015-04-13 | 2017-12-01 | 欧姆龙株式会社 | The connecting structure of terminal and the electromagnetic relay using the connecting structure |
| CN108573983A (en) * | 2017-03-13 | 2018-09-25 | 京东方科技集团股份有限公司 | Optical detector and preparation method thereof, fingerprint Identification sensor, display device |
| CN109671729A (en) * | 2017-10-17 | 2019-04-23 | 京东方科技集团股份有限公司 | Probe unit and preparation method thereof, flat panel detector |
| CN111344601A (en) * | 2018-10-18 | 2020-06-26 | 京东方科技集团股份有限公司 | Radiation detector and radiation detection panel |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN103165635B (en) | 2016-03-02 |
| WO2014139222A1 (en) | 2014-09-18 |
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