CN103730463A - Thin film transistor substrate with photoelectric detector and manufacturing method thereof - Google Patents
Thin film transistor substrate with photoelectric detector and manufacturing method thereof Download PDFInfo
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Abstract
A thin film transistor substrate with a photoelectric detector is provided with a thin film transistor area and a photoelectric detection area. A grid electrode, a grid electrode insulating layer, a semi-conductor layer and a first patterned conducting layer are sequentially arranged on the substrate. The first patterned conducting layer comprises a first source/drain electrode, a second source/drain electrode and a first electrode layer, wherein the first source/drain electrode and the second source/drain electrode are electrically connected with the semi-conductor layer, and the first electrode layer is located in the photoelectric detection area. A first patterned protective layer is arranged on the first patterned conducting layer. A second patterned conducting layer is arranged on the first patterned protective layer and comprises a pixel electrode and a second electrode layer located in the photoelectric detection area. The second patterned protective layer is arranged on the first patterned protective layer and directly makes contact with the edge part of a photosensitive dielectric layer in a covering mode. The invention further relates to a manufacturing method of the thin film transistor substrate provided with the photoelectric detector.
Description
Affiliated technical field
The present invention relates to the integrated structure of OPTICAL SENSORS and thin film transistor base plate, and be particularly related to a kind of thin film transistor base plate with OPTICAL SENSORS and preparation method thereof.
Background technology
In recent years, touch technology is widely used as a kind of technology of new human-computer interaction.Usually, whether the realization of touch controllable function is that OPTICAL SENSORS is arranged in each pixel cell of thin film transistor base plate, thereby respond to it, be touched.
Fig. 1 is a kind of cross-sectional view of a pixel cell of the existing thin film transistor base plate with OPTICAL SENSORS.Refer to Fig. 1, thin film transistor base plate 100 has TFT regions 101 and light sensing region 102, and wherein, thin-film transistor 110 is arranged on TFT regions 101, and OPTICAL SENSORS 120 is arranged on light sensing region 102.Conventionally, when making thin film transistor base plate 100, the first conductive layer 122 and the source drain 112 of thin-film transistor 110 of OPTICAL SENSORS 120 are to form in same step.Forming for example tin indium oxide of the insulating protective layer 130 exposed portions serve source drains 112 of patterning and the first conductive layer 122(; ITO) afterwards; on the first conductive layer 122, form successively more for example tin indium oxide of photosensitive dielectric layer 124 and the second conductive layer 126(; ITO), and when forming the second conductive layer 126 form pixel electrode.Now, the edge part 123 of the photosensitive dielectric layer 124 of OPTICAL SENSORS 120 is not covered by the second conductive layer 126 completely but exposes from the second conductive layer 126, on the one hand, the photosensitive dielectric layer 124 exposing is more easily damaged, and then have influence on the performance of OPTICAL SENSORS 120, on the other hand, the photosensitive dielectric layer 124 exposing can form leakage path, and then dark current is increased.
Summary of the invention
The object of the invention is to, a kind of thin film transistor base plate with OPTICAL SENSORS is provided, it has more stable light sensing performance and lower dark current.
Another object of the present invention is to, a kind of manufacture method with the thin film transistor base plate of OPTICAL SENSORS is provided, this manufacture method is simple, and cost is low, and the thin film transistor base plate with OPTICAL SENSORS of its making has more stable light sensing performance and lower dark current.
It is to adopt following technical scheme to realize that the present invention solves its technical problem.
The present invention proposes a kind of thin film transistor base plate with OPTICAL SENSORS, and it comprises substrate, grid, gate insulator, semiconductor layer, the first patterned conductive layer, the first patterning protective layer, actinodielectric layer, the second patterned conductive layer and the second patterning protective layer.Wherein, substrate has TFT regions and light sensing region.Grid is arranged on substrate and is positioned at TFT regions.Gate insulator is arranged on substrate, and cover gate and substrate.Semiconductor layer is arranged on gate insulator and is positioned at the top of grid.The first patterned conductive layer comprises and is positioned at the first source/drain and the second source/drain that TFT regions and semiconductor layer be electrically connected and the first electrode layer that is positioned at light sensing region.The first patterning protective layer is arranged on the first patterned conductive layer, and exposed portions serve the second source/drain and part the first electrode layer.Actinodielectric layer is arranged on the first patterning protective layer, is positioned at this light sensing region and is connected with the first electrode layer exposing from the first patterning protective layer.The second patterned conductive layer is arranged on the first patterning protective layer and actinodielectric layer; and comprise the second electrode lay that is positioned at the pixel electrode of TFT regions and is positioned at light sensing region; wherein; pixel electrode and the second source/drain is electrically connected, and the second electrode lay is connected with actinodielectric layer.The second patterning protective layer is arranged on the first patterning protective layer, and directly contact covers the edge part of actinodielectric layer.
In one of the present invention embodiment, the second patterning protective layer that is positioned at above-mentioned TFT regions is positioned at the below of pixel electrode, and the second patterning protective layer that is positioned at light sensing region directly contacts side and the part upper surface that covers actinodielectric layer.
In one of the present invention embodiment, the second insulating protective layer that is positioned at above-mentioned TFT regions is positioned at the top of this pixel electrode, and the second insulating protective layer that is positioned at light sensing region directly contacts the side that covers actinodielectric layer.
In one of the present invention embodiment, the second insulating protective layer that is positioned at above-mentioned TFT regions is positioned at the top of pixel electrode, and the second insulating protective layer that is positioned at light sensing region also directly contacts side and the part upper surface that covers the second electrode lay.
The present invention also proposes a kind of manufacture method with the thin film transistor base plate of OPTICAL SENSORS, comprises the following steps.First, provide the substrate with TFT regions and light sensing region.On substrate, form the grid that is positioned at TFT regions.Afterwards, form gate insulator, and cover gate and substrate.Then, form semiconductor layer on gate insulator, semiconductor layer is positioned at the top of grid.Then, form the first patterned conductive layer, the first patterned conductive layer comprises and is positioned at TFT regions and the first source/drain and the second source/drain of semiconductor layer electric connection and the first electrode layer that is positioned at light sensing region.Moreover, on the first patterned conductive layer, form the first patterning protective layer, with exposed portions serve the second source/drain and part the first electrode layer.Afterwards, form actinodielectric layer on the first patterning protective layer, actinodielectric layer is positioned at light sensing region and is connected with the first electrode layer.Then; on the first patterning protective layer and actinodielectric layer, form the second patterned conductive layer; the second patterned conductive layer comprises the second electrode lay that is positioned at the pixel electrode of TFT regions and is positioned at light sensing region; and pixel electrode and the second source/drain are electrically connected, and the second electrode lay is connected with actinodielectric layer.This manufacture method with the thin film transistor base plate of OPTICAL SENSORS is also included in and on the first patterning protective layer, forms the second patterning protective layer, and makes the second patterning protective layer directly contact the edge part that covers actinodielectric layer.
In one of the present invention embodiment, on above-mentioned the first patterning protective layer, forming the second patterning protective layer is after forming actinodielectric layer, before forming the second patterned conductive layer.
In one of the present invention embodiment, above-mentioned formation the first patterning protective layer is to utilize same light shield to form through lithography with forming the second patterning protective layer.
In one of the present invention embodiment, on above-mentioned the first patterning protective layer, forming the second patterning protective layer is after forming the second patterned conductive layer.
In one of the present invention embodiment, above-mentioned formation the first patterning protective layer is to utilize same light shield to form through lithography with forming the second patterning protective layer.
The invention has the beneficial effects as follows; formation due to the second patterning protective layer; the second patterning protective layer can directly contact the edge part that covers actinodielectric layer; thereby the edge part that actinodielectric layer is particularly exposed is effectively protected; prevent damage, thus can be so that OPTICAL SENSORS has more stable light sensing performance.In addition, the edge part that actinodielectric layer particularly exposes obtains the second patterning protective layer and effectively protects, and can effectively cut off leakage path, thereby effectively reduce dark current.In addition, the formation of the second patterning protective layer can be used the same light shield while forming the first patterning protective layer, not only makes simple but also is conducive to save cost of manufacture.
Accompanying drawing explanation
Fig. 1 is a kind of cross-sectional view of a pixel cell of the existing thin film transistor base plate with OPTICAL SENSORS.
The making flow process cross-sectional view of the thin film transistor base plate with OPTICAL SENSORS of Fig. 2 A to Fig. 2 G first embodiment of the invention.
The making flow process cross-sectional view of the thin film transistor base plate with OPTICAL SENSORS of Fig. 3 A to Fig. 3 G second embodiment of the invention.
Embodiment
Below in conjunction with drawings and Examples, the present invention is further described.
Refer to Fig. 2 A to Fig. 2 G, Fig. 2 A to Fig. 2 G is the making flow process cross-sectional view of the thin film transistor base plate with OPTICAL SENSORS of first embodiment of the invention.For simplicity and be convenient to explanation, Fig. 2 A to Fig. 2 G only shows the structure of a pixel cell.Particularly, the manufacture method of the thin film transistor base plate with OPTICAL SENSORS of the present embodiment comprises the following steps.
First, refer to Fig. 2 A, substrate 210 is provided, substrate 210 has TFT regions 212 and light sensing region 214.On substrate 210, form the grid 222 that is positioned at TFT regions 212.Then, refer to Fig. 2 B, form gate insulator 223, cover gate 222 and whole substrate 210.On gate insulator 230, form again semiconductor layer 224, and make semiconductor layer 224 be positioned at the top of grid 222.Semiconductor layer 224 is for example metal oxide semiconductor layer.Preferably, can on semiconductor layer 224, form ohmic contact layer 225.Afterwards, refer to Fig. 2 C, forming the first patterned conductive layer 230, the first patterned conductive layers 230 comprises and is positioned at the first source/drain 232 and the second source/drain 234 that TFT regions 212 and semiconductor layer 224 be electrically connected and the first electrode layer 236 that is positioned at light sensing region 214.The first patterned conductive layer 230 is such as being the dielectric materials such as silica, silicon nitride, silicon oxynitride.It should be noted that, if be previously formed with ohmic contact layer 225, ohmic contact layer 225 should also carry out in the lump patterning when patterning the first patterned conductive layer 240, be electrically connected with the first source/drain 232 and the second source/drain 234 respectively, to avoid the first source/ drain 232 and 234 short circuits of the second source/drain.Then, refer to Fig. 2 D, on the first patterned conductive layer 230, form the first patterning protective layer 240, with exposed portions serve the second source/drain 234 and part the first electrode layer 236.In the present embodiment, the first patterning protective layer 240 has the first opening 242 and the second opening 244, and part the second source/drain 234 and part the first electrode layer 236 expose from the first opening 242 and the second opening 244 respectively.The making of the making of the first patterned conductive layer 230 and the first patterning protective layer 240 can adopt for example micro image etching procedure of existing various patterning process, does not repeat them here.Then, refer to Fig. 2 E, on the first patterning protective layer 240, form actinodielectric layer 250.Actinodielectric layer 250 is positioned at light sensing region 214, and is connected with the first electrode layer 236 exposing from the second opening 244.Actinodielectric layer 250 is for example the dielectric materials layer of Silicon-rich.
Afterwards, refer to Fig. 2 F, on the first patterning protective layer 240 and actinodielectric layer 250, form the second patterning protective layer 260.The second patterning protective layer 260 covers the first patterning protective layer 240 and actinodielectric layer 250, and directly contact covers the edge part 252 of actinodielectric layer 250.The second patterned conductive layer 260 is such as being the dielectric materials such as silica, silicon nitride, silicon oxynitride.In the present embodiment; the second patterning protective layer 260 has the first opening 262 and second opening 264 of corresponding the first opening 242 of difference and the second opening 244, and the actinodielectric layer 236 of part the second source/drain 234 and part exposes from the first opening 262 and the second opening 264 respectively.In the present embodiment; owing to forming the second patterning protective layer 260, be after forming actinodielectric layer 250; before forming the second patterned conductive layer 270; the second patterning protective layer 260 can directly contact side 254 and the part upper surface 255 that covers actinodielectric layer 250, so that the edge part 252 of actinodielectric layer 250 is able to effective protection.It should be noted that; because the second patterning protective layer 260 has the first opening 262 and the second opening 264 of distinguishing corresponding the first opening 242 and the second opening 244; therefore; forming the second patterning protective layer 260 and forming the first patterning protective layer 240 to utilize same light shield to form through lithography; without extra light shield, be conducive to cost-saving.
Afterwards, refer to Fig. 2 G, on this second patterning protective layer 260, form the second patterned conductive layer 270.The second patterned conductive layer 270 comprises the pixel electrode 272 that is positioned at TFT regions 212 and the second electrode lay 274 that is positioned at light sensing region 214.Pixel electrode 272 is electrically connected with the second source/drain 234 exposing from the first opening 242,262, and the second electrode lay 274 is connected with the actinodielectric layer 250 exposing from the second opening 244,264.The making of the making of the second patterning protective layer 260 and the second patterned conductive layer 270 can adopt for example micro image etching procedure of existing various patterning process, does not repeat them here.。
Please continue to refer to Fig. 2 G; the thin film transistor base plate with OPTICAL SENSORS 200 of making through above-mentioned making step, it comprises substrate 210, grid 222, gate insulator 223, semiconductor layer 224, the first patterned conductive layer 230, the first patterning protective layer 240, actinodielectric layer the 250, second patterning protective layer 260 and the second patterned conductive layer 270.Substrate 100 has TFT regions 212 and light sensing region 214.Grid 222 is arranged on substrate 210 and is positioned at TFT regions 212.Gate insulator 223 is arranged on substrate 210, and cover gate 222 and substrate 210.Semiconductor layer 224 and ohmic contact layer 225 are arranged on gate insulator 223 and are positioned at the top of grid 222.The first patterned conductive layer 230 comprises and is positioned at the first source/drain 232 and the second source/drain 234 that TFT regions 212 and semiconductor layer 224 be electrically connected and the first electrode layer 236 that is positioned at light sensing region 214.The first patterning protective layer 240 is arranged on the first patterned conductive layer 230, and exposed portions serve the second source/drain 234 and part the first electrode layer 236.Actinodielectric layer 250 is arranged on the first patterning protective layer 240, is positioned at light sensing region 214 and is connected with the first electrode layer 236 exposing from the first patterning protective layer 240.The second patterning protective layer 260 is arranged on the first patterning protective layer 240, and directly contact covers the edge part 252 of actinodielectric layer 250.In the present embodiment, the second patterning protective layer 260 directly contacts side 254 and the part upper surface 255 that covers actinodielectric layer 250.The second patterned conductive layer 270 is arranged on the second patterning protective layer 260; and comprise the pixel electrode 272 that is positioned at TFT regions 212 and the second electrode lay 274 that is positioned at light sensing region 214; wherein; pixel electrode 272 and the second source/drain 234 are electrically connected, and the second electrode lay 274 is connected with the actinodielectric layer 250 exposing from the second patterning protective layer 260.That is to say, the second patterning protective layer 260 that is positioned at TFT regions 212 is positioned at the below of pixel electrode 272.Wherein, grid 222, gate insulator 223, semiconductor layer 224, ohmic contact layer 225 the first source/drains 232 and the second source/drain 234 form the thin-film transistor that is positioned at TFT regions 212; And the first electrode layer 236, actinodielectric layer 250 and the second electrode lay 274 form the OPTICAL SENSORS that is positioned at light sensing region 214.
Refer to Fig. 3 A to Fig. 3 G, Fig. 3 A to Fig. 3 G is the making flow process cross-sectional view of the thin film transistor base plate with OPTICAL SENSORS of second embodiment of the invention.First refer to Fig. 3 A to 3E, until form photosensitive dielectric layer 250, the manufacture method of the manufacture method of the present embodiment and the first embodiment is roughly the same, does not repeat them here, and the two difference is to form photosensitive dielectric layer 250 step afterwards.
Particularly, referring to Fig. 3 F, after forming actinodielectric layer 250, is first to form the second patterned conductive layer 270a on the first patterning protective layer 240 and actinodielectric layer 250.In the present embodiment, the second patterned conductive layer 270a comprises the pixel electrode 272a that is positioned at TFT regions 212 and the second electrode lay 274a that is positioned at light sensing region 214.Pixel electrode 272a is electrically connected with the second source/drain 234 exposing from the first opening 242, and the second electrode lay 274a is connected with the actinodielectric layer 250 exposing from the second opening 244.Afterwards, refer to Fig. 3 G, on the second patterned conductive layer 270a and the first patterning protective layer 240, form the second patterning protective layer 260a.The second patterning protective layer 260a covers the first patterning protective layer 240 and part the second patterned conductive layer 270a.In the present embodiment; the second patterning protective layer 260a has the first opening 262a and the second opening 264a of corresponding the first opening 242 of difference and the second opening 244, and partial pixel electrode 272a and part the second electrode lay 274a expose from the first opening 262a and the second opening 264a respectively.In the present embodiment; owing to forming the second patterning protective layer 260a, be after forming the second patterned conductive layer 270a; therefore the second patterning protective layer 260a is except the side 254 of the actinodielectric layer 250 of direct contact covering; the second patterning protective layer 260a also further directly contacts the side 265 that covers the second electrode lay 274a, even the part upper surface 266 of the second electrode lay 274a.Thereby make the edge part 252 of actinodielectric layer 250 be able to effective protection.The second making of patterning protective layer 260a and the making of the second patterned conductive layer 270a can adopt for example micro image etching procedure of existing various patterning process, do not repeat them here.It should be noted that; because the second patterning protective layer 260a has the first opening 262a and the second opening 264a that distinguishes corresponding the first opening 242 and the second opening 244; therefore; forming the second patterning protective layer 260a and forming the first patterning protective layer 240 to utilize same light shield to form through lithography; without extra light shield, be conducive to cost-saving.
Please continue to refer to Fig. 3 G; the thin film transistor base plate 200a with OPTICAL SENSORS making through above-mentioned making step, it comprises substrate 210, grid 222, gate insulator 223, semiconductor layer 224, the first patterned conductive layer 230, the first patterning protective layer 240, actinodielectric layer the 250, second patterning protective layer 260a and the second patterned conductive layer 270a.Substrate 210 has TFT regions 212 and light sensing region 214.Grid 222 is arranged on substrate 210 and is positioned at TFT regions 212.Gate insulator 223 is arranged on substrate 210, and cover gate 222 and substrate 210.Semiconductor layer 224 and ohmic contact layer 225 are arranged on gate insulator 223 and are positioned at the top of grid 222.The first patterned conductive layer 230 comprises and is positioned at the first source/drain 232 and the second source/drain 234 that TFT regions 212 and semiconductor layer 224 be electrically connected and the first electrode layer 236 that is positioned at light sensing region 214.The first patterning protective layer 240 is arranged on the first patterned conductive layer 230, and exposed portions serve the second source/drain 234 and part the first electrode layer 236.Actinodielectric layer 250 is arranged on the first patterning protective layer 240 and with the first electrode layer 236 exposing from the first patterning protective layer 240 and is connected.The second patterned conductive layer 270a is arranged on the first patterning protective layer 240; and comprise the pixel electrode 272a that is positioned at TFT regions 212 and the second electrode lay 274a that is positioned at light sensing region 214; wherein; pixel electrode 272a and the second source/drain 234 are electrically connected, and the second electrode lay 264 is connected with actinodielectric layer 250.The second patterning protective layer 260a is arranged at the first patterning protective layer 240 and the second patterned conductive layer 270a is upper, and directly contact covers the edge part 252 of actinodielectric layer 250.In the present embodiment, the second patterning protective layer 260a directly contacts and covers the side 254 of actinodielectric layer 250 and side 265 and the part upper surface 266 of the second electrode lay 274a.That is to say, the second patterning protective layer 260a that is positioned at TFT regions 212 is positioned at the top of pixel electrode 272a.Wherein, grid 222, gate insulator 223, semiconductor layer 224, ohmic contact layer 225 the first source/drains 232 and the second source/drain 234 form the thin-film transistor that is positioned at TFT regions 212; And the first electrode layer 236, actinodielectric layer 250 and the second electrode lay 274a form the OPTICAL SENSORS that is positioned at light sensing region 214.
In sum; of the present invention at least have a following advantages: due to the formation of the second patterning protective layer; the second patterning protective layer can directly contact the edge part that covers actinodielectric layer; thereby the edge part that actinodielectric layer is particularly exposed is effectively protected; prevent damage, thus can be so that OPTICAL SENSORS has more stable light sensing performance.In addition, the edge part that actinodielectric layer particularly exposes obtains the second patterning protective layer and effectively protects, and can effectively cut off leakage path, thereby effectively reduce dark current.In addition, the formation of the second patterning protective layer can be used the same light shield while forming the first patterning protective layer, not only makes simple but also is conducive to save cost of manufacture.
Claims (9)
1. a thin film transistor base plate with OPTICAL SENSORS, it comprises:
Substrate, has TFT regions and light sensing region;
Grid, is arranged on this substrate and is positioned at this TFT regions;
Gate insulator, is arranged on this substrate, and covers this grid and this substrate;
Semiconductor layer, is arranged on this gate insulator and is positioned at the top of this grid;
The first patterned conductive layer, it comprises and is positioned at the first source/drain and the second source/drain that this TFT regions and this semiconductor layer be electrically connected and the first electrode layer that is positioned at this light sensing region;
The first patterning protective layer, is arranged on this first patterned conductive layer, and this second source/drain of exposed portions serve and this first electrode layer of part;
Actinodielectric layer, is arranged on the first patterning protective layer, is positioned at this light sensing region and is connected with this first electrode layer of the part of exposing from the first patterning protective layer; And
The second patterned conductive layer, be arranged on this first patterning protective layer and actinodielectric layer, this second patterned conductive layer comprises the second electrode lay that is positioned at the pixel electrode of this TFT regions and is positioned at this light sensing region, this pixel electrode and this second source/drain is electrically connected, and this second electrode lay is connected with this actinodielectric layer;
It is characterized in that, this thin film transistor base plate with OPTICAL SENSORS also comprises the second patterning protective layer, be arranged on this first patterning protective layer, and directly contact covers this edge part of actinodielectric layer.
2. the thin film transistor base plate with OPTICAL SENSORS according to claim 1; it is characterized in that; this the second patterning protective layer that is positioned at this TFT regions is positioned at the below of this pixel electrode, and this second patterning protective layer that is positioned at this light sensing region directly contacts side and the part upper surface that covers this actinodielectric layer.
3. the thin film transistor base plate with OPTICAL SENSORS according to claim 1; it is characterized in that; this second insulating protective layer that is positioned at this TFT regions is positioned at the top of this pixel electrode, and this second insulating protective layer that is positioned at this light sensing region directly contacts the side that covers this actinodielectric layer.
4. the thin film transistor base plate with OPTICAL SENSORS according to claim 3; it is characterized in that; this second insulating protective layer that is positioned at this TFT regions is positioned at the top of this pixel electrode, and this second insulating protective layer that is positioned at this light sensing region also directly contacts side and the part upper surface that covers this second electrode lay.
5. a manufacture method with the thin film transistor base plate of OPTICAL SENSORS, is characterized in that, it comprises:
Substrate is provided, and this substrate has TFT regions and light sensing region;
On this substrate, form the grid that is positioned at this TFT regions;
Form gate insulator, and cover this grid and this substrate;
On this gate insulator, form semiconductor layer, this semiconductor layer is positioned at the top of this grid;
Form the first patterned conductive layer, this first patterned conductive layer comprises and is positioned at the first source/drain and the second source/drain that this TFT regions and this semiconductor layer be electrically connected and the first electrode layer that is positioned at this light sensing region;
On this first patterned conductive layer, form the first patterning protective layer, with this second source/drain of exposed portions serve and this first electrode layer of part;
On this first patterning protective layer, form actinodielectric layer, this actinodielectric layer is positioned at this light sensing region and is connected with this first electrode layer; And
On this first patterning protective layer and this actinodielectric layer, form the second patterned conductive layer, this second patterned conductive layer comprises the second electrode lay that is positioned at the pixel electrode of this TFT regions and is positioned at this light sensing region, this pixel electrode and this second source/drain is electrically connected, and this second electrode lay is connected with this actinodielectric layer;
It is characterized in that, this manufacture method with the thin film transistor base plate of OPTICAL SENSORS is also included on this first patterning protective layer and forms the second patterning protective layer, and makes this second patterning protective layer directly contact the edge part that covers this actinodielectric layer.
6. the manufacture method with the thin film transistor base plate of OPTICAL SENSORS according to claim 5; it is characterized in that; on this first patterning protective layer, forming this second patterning protective layer is after forming this actinodielectric layer, before forming this second patterned conductive layer.
7. the manufacture method with the thin film transistor base plate of OPTICAL SENSORS according to claim 6, is characterized in that, forming this first patterning protective layer is to utilize same light shield to form through lithography with forming this second patterning protective layer.
8. the manufacture method with the thin film transistor base plate of OPTICAL SENSORS according to claim 5, is characterized in that, on this first patterning protective layer, forming this second patterning protective layer is after forming this second patterned conductive layer.
9. the manufacture method with the thin film transistor base plate of OPTICAL SENSORS according to claim 8, is characterized in that, forming this first patterning protective layer is to utilize same light shield to form through lithography with forming this second patterning protective layer.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104267857A (en) * | 2014-08-20 | 2015-01-07 | 友达光电股份有限公司 | Photoelectric sensing array, method for manufacturing photoelectric sensing array and display device |
| WO2020042521A1 (en) * | 2018-08-31 | 2020-03-05 | Boe Technology Group Co., Ltd. | Array substrate, manufacturing method thereof, and display apparatus |
| CN111373313A (en) * | 2017-09-28 | 2020-07-03 | 深圳传音通讯有限公司 | Display panel assembly, mobile terminal, image generation method and storage medium |
| US11227874B2 (en) | 2018-05-29 | 2022-01-18 | Au Optronics Corporation | Photosensitive element having substantially flat interface between electrode and photosensitive layer and manufacturing method thereof |
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2012
- 2012-10-11 CN CN201210384513.8A patent/CN103730463A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104267857A (en) * | 2014-08-20 | 2015-01-07 | 友达光电股份有限公司 | Photoelectric sensing array, method for manufacturing photoelectric sensing array and display device |
| CN104267857B (en) * | 2014-08-20 | 2017-04-12 | 友达光电股份有限公司 | Photoelectric sensing array, method for manufacturing photoelectric sensing array and display device |
| CN111373313A (en) * | 2017-09-28 | 2020-07-03 | 深圳传音通讯有限公司 | Display panel assembly, mobile terminal, image generation method and storage medium |
| US11227874B2 (en) | 2018-05-29 | 2022-01-18 | Au Optronics Corporation | Photosensitive element having substantially flat interface between electrode and photosensitive layer and manufacturing method thereof |
| WO2020042521A1 (en) * | 2018-08-31 | 2020-03-05 | Boe Technology Group Co., Ltd. | Array substrate, manufacturing method thereof, and display apparatus |
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Application publication date: 20140416 |