CN107316909A - 一种多量子阱空间GaInP/InGaAs/Ge电池外延片的制造方法 - Google Patents

一种多量子阱空间GaInP/InGaAs/Ge电池外延片的制造方法 Download PDF

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CN107316909A
CN107316909A CN201710683629.4A CN201710683629A CN107316909A CN 107316909 A CN107316909 A CN 107316909A CN 201710683629 A CN201710683629 A CN 201710683629A CN 107316909 A CN107316909 A CN 107316909A
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万智
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Abstract

本发明公开了一种多量子阱空间GaInP/InGaAs/Ge电池外延片的制造方法，它是分别在中电池和顶电池的基区和发射区中间加入多量子阱层结构，即：本发明通过在中电池的p‑GaInAs基区层和n‑GaInAs发射区层之间、顶电池的p‑GaInP基区层和n‑GaInP发射区层之间分别引入GaAsP/GaInAs量子阱层和GaInP/AlGaInP量子阱层，因而能加宽电池的吸收光谱宽度，使电池的耗尽层变宽，改善电池的抗辐照性能，少数光生载流子的扩散长度增大，光生载流子的收集效率提升，减少光生载流子的辐射复合，从而提高了空间GaInP/InGaAs/Ge电池外延片的光电转化效率，使电池性能进一步改善。

Description

一种多量子阱空间GaInP/InGaAs/Ge电池外延片的制造方法
技术领域
本发明涉及电池外延片的制造方法，尤其是涉及一种多量子阱空间GaInP/InGaAs/Ge电池外延片的制造方法。
背景技术
GaInP/InGaAs/Ge 三结太阳能电池由于光电转化效率高、抗辐照性能好等特点目前已成为空间飞行器的主要能源。目前空间用GaInP/InGaAs/Ge 三结太阳能电池基本采用晶格匹配的的GaInP/InGaAs/Ge结构，由于需要GaInP、InGaAs、Ge材料晶格参数匹配，三种材料的禁带宽度就固定了。GaInP/InGaAs/Ge三结电池中Ge材料禁带宽度较小，覆盖的光谱较宽，导致其电流密度较大，与InGaAs和GaInP构成的电池电流不匹配，这就降低了太阳光的利用率。目前，常规GaInP/InGaAs/Ge三结太阳能电池达到的最高效率32%～33%和理论极限值49%还有很大的差距，提高常规GaInP/InGaAs/Ge三结太阳能电池的效率还有很大的空间。
为了改善常规GaInP/InGaAs/Ge三结太阳能电池电流不匹配的情况，在电池材料晶格匹配的情况下，引入新材料层，改善带隙组合是提高常规GaInP/InGaAs/Ge 三结太阳能电池效率的一种方法。
发明内容
本发明的目的在于提供一种能加宽中电池和顶电池的吸收光谱宽度、改善电池的抗辐照性能、减少复合、从而提高空间GaInP/InGaAs/Ge外延片的光电转化效率的多量子阱空间GaInP/InGaAs/Ge电池外延片的制造方法。
本发明的目的是这样实现的：
一种多量子阱空间GaInP/InGaAs/Ge电池外延片的制造方法，特征是：在由GaInAs基区层、发射区层、AlGaAs背场层、AlInP窗口层构成的中电池中引入GaAsP/GaInAs量子阱层，在由GaInP基区层、发射区层、AlGaInP背场层、AlInP窗口层构成的顶电池中引入GaInP/AlGaInP量子阱层，具体步骤如下：
提供一p-Ge衬底，在p-Ge衬底上依次外延生长n-AlGaInP成核层，n-GaAs/ n-GaInAs缓冲层，n++-GaAs/p++-GaAs隧穿结层，p-AlGaAs/p-AlGaInAs (DBR)反射层，p-AlGaAs 背场层，p-GaInAs基区层，GaAsP/GaInAs量子阱层，n-GaInAs发射区层，n-AlInP窗口层，n++-GaInP/p++-AlGaAs隧穿结层，p-AlGaInP背场层，p-GaInP基区层，GaInP/AlGaInP量子阱层，n-GaInP发射区层，n-AlInP窗口层和n+-GaAs欧姆接触层。
衬底材料为p-Ge；n-AlGaInP成核层的厚度为0.01μm，掺杂浓度为1～2×1018cm-3。
n-GaAs/GaInAs缓冲层的厚度为0.5μm，掺杂浓度为≥1×1018cm-3。
n++-GaAs/p++-GaAs隧穿结层，其中n++-GaAs层的厚度为0.01-003μm，掺杂浓度为≥5×1018cm-3，p++-GaAs层的厚度为0.01-003μm，掺杂浓度为≥1×1019cm-3。
p-AlGaAs/p-AlGaInAs (DBR)反射层的厚度为1.8μm，掺杂浓度为1×1018 cm-3。
p-AlGaAs 背场层的厚度为0.1μm，掺杂浓度为1～2×1018 cm-3。
p-GaInAs基区层的厚度为0.6μm，掺杂浓度为2～8×1016cm-3。
GaAsP/GaInAs 量子阱层结构共30对，总厚度为1μm。
n-GaInAs发射区层的厚度为0.1μm，掺杂浓度为1×1018cm-3。
n-AlInP窗口层的厚度为0.1μm，掺杂浓度为1×1018cm-3。
n++-GaInP/p++-AlGaAs隧穿结层，其中n++- GaInP层的厚度为0.01-003μm，掺杂浓度为≥5×1018cm-3，p++-AlGaAs层的厚度为0.01-003μm，掺杂浓度为≥5×1019cm-3。
p-AlGaInP 背场层的厚度为0.1μm，掺杂浓度为1～2×1018 cm-3。
p-GaInP基区层的厚度为0.25μm，掺杂浓度为1～8×1016cm-3。
GaInP/AlGaInP量子阱层共15对，总厚度为0.45μm。
n-GaInP发射区层的厚度为0.1μm，掺杂浓度为1×1018cm-3。
n-AlInP窗口层的厚度为0.1μm，掺杂浓度为1×1018cm-3。
n+-GaAs欧姆接触层厚度为0.5μm，掺杂浓度大于5×1018cm-3。
由于量子阱层结构中的阱层相对于基区层具有更小的禁带宽度，从而加大了中电池和顶电池的吸收光谱宽度，增加电池的电流密度。再由于量子阱层的辐照性能优于基区层材料，引入量子阱层，能使电池基区层的厚度减薄，可使电池的抗辐照性能得到提升。
和常规结构相比，本发明是分别在中电池和顶电池的基区和发射区中间加入多量子阱层结构，即：本发明通过在中电池的p-GaInAs基区层和n-GaInAs发射区层之间、顶电池的p-GaInP基区层和n-GaInP发射区层之间分别引入GaAsP/GaInAs量子阱层和GaInP/AlGaInP量子阱层（如图2所示），因而能加宽电池的吸收光谱宽度，使电池的耗尽层变宽，改善电池的的抗辐照性能，少数光生载流子的扩散长度增大，光生载流子的收集效率提升，减少光生载流子的辐射复合，从而提高了空间GaInP/InGaAs/Ge电池外延片的光电转化效率，使电池性能进一步改善。
附图说明
图1是本发明涉及到的外延层结构的示意图；
图2是本发明涉及的中电池和顶电池量子阱层结构设计示意图；量子阱结构由阱层和垒层交叉组成；
附图标识如下：
100：P型Ge衬底； 101：n-AlGaInP成核层；
102：n-GaAs/GaInAs缓冲层； 103：n++-GaAs/p++-GaAs隧穿结层；
104：p-AlGaAs/p-AlGaInAs (DBR)反射层；
105：p-AlGaAs 背场层； 106：p-GaInAs基区层；
107：GaAsP/GaInAs量子阱层； 108：n-GaInAs发射区层；
109：n-AlInP窗口层； 110：n++-GaInP/p++-AlGaAs隧穿结层；
111：p-AlGaInP背场层； 112：p-GaInP基区层；
113：GaInP/AlGaInP量子阱层 114：n-GaInP发射区层；
115：n-AlInP窗口层； 116：n+-GaAs欧姆接触层。
具体实施方式
下面结合实施例并对照附图对本发明作进一步详细说明。
一种多量子阱空间GaInP/InGaAs/Ge电池外延片的制造方法，采用的衬底为p-Ge衬底，设备为MOCVD，使用的MO源为TMGa、TMAl和TMIn，使用的掺杂源为CCl4、DEZn和SiH4，使用的特气为AsH3和PH3；
具体步骤如下：
A、在p-Ge衬底上以620℃温度生长n-AlGaInP成核层，n-AlGaInP成核层的厚度为0.01μm，掺杂浓度为1～2×1018cm-3；
B、在n-AlGaInP成核层上以650℃温度生长n-GaAs/GaInAs缓冲层，n-GaAs/GaInAs缓冲层的厚度为0.5μm，掺杂浓度为≥1×1018cm-3；
C、在GaAs/GaInAs缓冲层上以650℃温度生长n++-GaAs层，其中n++-GaAs层的厚度为0.01-003μm，掺杂浓度为≥5×1018cm-3，在n++-GaAs层上以620℃温度生长p++-GaAs层，p++-GaAs层的厚度为0.01-003μm，掺杂浓度为≥1×1019cm-3；
D、在p++-GaAs层上以650℃温度生长p-AlGaAs/p-AlGaInAs (DBR)反射层，p-AlGaAs/p-AlGaInAs反射层的厚度为1.8μm，掺杂浓度为1×1018 cm-3；
E、在AlGaAs/AlGaInAs反射层上以650℃温度生长p-AlGaAs 背场层，p-AlGaAs 背场层的厚度为0.1μm，掺杂浓度为1～2×1018 cm-3；
F、在AlGaAs 背场层上以650℃温度生长p-GaInAs基区层，p-GaInAs基区层的厚度为0.6μm，掺杂浓度为2～8×1016cm-3；
G、在GaInAs基区层上以650℃温度生长GaAsP/GaInAs量子阱层，量子阱结构由阱层和垒层交叉组成，阱层材料为Ga0.94In0.06As，垒层的材料为GaAs0.5P0.5；量子阱层的厚度为1μm，阱层和垒层交叉的对数为30对；
H、在GaAsP/GaInAs量子阱层上以650℃温度生长在n-GaInAs发射区层，n-GaInAs发射区层的厚度为0.1μm，掺杂浓度为1×1018 cm-3；
I、在GaInAs发射区层上以650℃温度生长n-AlInP窗口层，n-AlInP窗口层的厚度为0.1μm，掺杂浓度为1×1018cm-3；
J、在AlInP窗口层上以620℃温度生长n++-GaInP/p++-AlGaAs隧穿结层，其中：n++-GaInP层的厚度为0.01-003μm，掺杂浓度为≥5×1018cm-3，p++-AlGaAs层的厚度为0.01-003μm，掺杂浓度为≥5×1019cm-3；
K、在GaInP/AlGaAs隧穿结层上以620℃温度生长p-AlGaInP 背场层，p-AlGaInP 背场层的厚度为0.1μm，掺杂浓度为1～2×1018 cm-3；
L、在AlGaInP 背场层上以630℃温度生长p-GaInP基区层，p-GaInP基区层的厚度为0.25μm，掺杂浓度为1～8×1016cm-3；
M、在GaInP基区层上以630℃温度生长GaInP/AlGaInP量子阱层，阱层材料为Ga0.45In0.55P，垒层材料为(Al0.1Ga0.9)0.5In0.5P；量子阱层的厚度为0.45μm；阱层和垒层交叉的对数为15对；
N、在GaInP/AlGaInP量子阱层上以630℃温度生长n-GaInP发射区层，n-GaInP发射区层的厚度为0.1μm，掺杂浓度为1×1018cm-3；
O、在GaInP发射区层上以630℃温度生长n-AlInP窗口层，n-AlInP窗口层的厚度为0.1μm，掺杂浓度为1×1018cm-3；
P、在AlInP窗口层上以630℃温度生长n+-GaAs欧姆接触层，n+-GaAs欧姆接触层的厚度为0.5μm，掺杂浓度大于5×1018cm-3。

Claims (4)

1.一种多量子阱空间GaInP/InGaAs/Ge电池外延片的制造方法，其特征在于：在由GaInAs基区层、发射区层、AlGaAs背场层、AlInP窗口层构成的中电池中引入GaAsP/GaInAs量子阱层，在由GaInP基区层、发射区层、AlGaInP背场层、AlInP窗口层构成的顶电池中引入GaInP/AlGaInP量子阱层，具体步骤如下：
提供一p-Ge衬底，在p-Ge衬底上依次外延生长n-AlGaInP成核层，n-GaAs/ n-GaInAs缓冲层，n++-GaAs/p++-GaAs隧穿结层，p-AlGaAs/p-AlGaInAs (DBR)反射层，p-AlGaAs 背场层，p-GaInAs基区层，GaAsP/GaInAs量子阱层，n-GaInAs发射区层，n-AlInP窗口层，n++-GaInP/p++-AlGaAs隧穿结层，p-AlGaInP背场层，p-GaInP基区层，GaInP/AlGaInP量子阱层，n-GaInP发射区层，n-AlInP窗口层和n+-GaAs欧姆接触层。
2.根据权利要求1所述的多量子阱空间GaInP/InGaAs/Ge电池外延片的制造方法，其特征在于：衬底材料为p-Ge；n-AlGaInP成核层的厚度为0.01μm，掺杂浓度为1～2×1018cm-3；
n-GaAs/GaInAs缓冲层的厚度为0.5μm，掺杂浓度为≥1×1018cm-3；
n++-GaAs/p++-GaAs隧穿结层，其中n++-GaAs层的厚度为0.01-003μm，掺杂浓度为≥5×1018cm-3，p++-GaAs层的厚度为0.01-003μm，掺杂浓度为≥1×1019cm-3；
p-AlGaAs/p-AlGaInAs反射层的厚度为1.8μm，掺杂浓度为1×1018 cm-3；
p-AlGaAs 背场层的厚度为0.1μm，掺杂浓度为1～2×1018 cm-3；
p-GaInAs基区层的厚度为0.6μm，掺杂浓度为2～8×1016cm-3；
n-GaInAs发射区层的厚度为0.1μm，掺杂浓度为1×1018cm-3；
n-AlInP窗口层的厚度为0.1μm，掺杂浓度为1×1018cm-3；
n++-GaInP/p++-AlGaAs隧穿结层，其中n++- GaInP层的厚度为0.01-003μm，掺杂浓度为≥5×1018cm-3，p++-AlGaAs层的厚度为0.01-003μm，掺杂浓度为≥5×1019cm-3；
p-AlGaInP 背场层的厚度为0.1μm，掺杂浓度为1～2×1018 cm-3；
p-GaInP基区层的厚度为0.25μm，掺杂浓度为1～8×1016cm-3；
n-GaInP发射区层的厚度为0.1μm，掺杂浓度为1×1018cm-3；
n-AlInP窗口层的厚度为0.1μm，掺杂浓度为1×1018cm-3；
n+-GaAs欧姆接触层厚度为0.5μm，掺杂浓度大于5×1018cm-3。
3.根据权利要求1所述的多量子阱空间GaInP/InGaAs/Ge电池外延片的制造方法，其特征在于：在GaAsP/GaInAs量子阱层中，阱层材料为Ga0.94In0.06As，垒层的材料为GaAs0.5P0.5；量子阱层的厚度为1μm，阱层和垒层交叉的对数为30对。
4.根据权利要求1所述的多量子阱空间GaInP/InGaAs/Ge电池外延片的制造方法，其特征在于：在GaInP/AlGaInP量子阱层中，阱层材料为Ga0.45In0.55P， 垒层材料为Al0.1Ga0.9) 0.5In0.5P；量子阱层的厚度为0.45μm，阱层和垒层交叉的对数为15对。
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