CN109545898A - 一种抗辐照增强型空间GaInP/GaInAs/Ge电池外延片的制造方法 - Google Patents

一种抗辐照增强型空间GaInP/GaInAs/Ge电池外延片的制造方法 Download PDF

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CN109545898A
CN109545898A CN201811421360.3A CN201811421360A CN109545898A CN 109545898 A CN109545898 A CN 109545898A CN 201811421360 A CN201811421360 A CN 201811421360A CN 109545898 A CN109545898 A CN 109545898A
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battery
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万智
徐培强
林晓珊
张银桥
汪洋
王向武
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Nanchang Kaixun Photoelectric Co Ltd
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Abstract

本发明公开了一种抗辐照增强型空间GaInP/GaInAs/Ge电池外延片的制造方法。为了提高GaInP/GaInAs/Ge太阳能电池的抗辐照能力，目前常采用技术主要是将顶电池GaInP的厚度减薄，使电池变成顶电池限流，使辐照后中电池电流的衰减不引起整个电流的变化；另外在中电池中增加分布式布拉格反射器(DBR)结构、减薄中电池GaInAs的厚度，使的中电池GaInAs抗辐照能力增强。本发明公开了一种抗辐照增强型空间GaInP/GaInAs/Ge电池外延片的制造方法，与常规空间GaInP/InGaAs/Ge电池结构相比，采用本发明技术方案的产品结构在常规GaInP/InGaAs/Ge电池中电池窗口层上沉积一定厚度、高掺杂的阻隔层材料AlGaAs，通过使中电池厚度增加，使得辐射通量更小的较高能量的质子停留在中电池基区，使得中电池的累积损伤更小，从而提高了电池的抗辐射能力。

Description

一种抗辐照增强型空间GaInP/GaInAs/Ge电池外延片的制造 方法
技术领域
本发明涉及电池外延片制造方法技术领域，尤其是涉及一种抗辐照增强型空间GaInP/GaInAs/Ge电池外延片的制造方法。
背景技术
GaInP/GaInAs/Ge太阳能电池凭借其较高的光电转换效率和优良的抗辐照性能成为卫星最常用的动力来源。由于空间辐照环境十分复杂，卫星在空间飞行期间，高能粒子进入太阳能电池后会对电池造成损伤，包括移位和电离等损伤，其中移位损伤是电池辐照损伤的主因；高能粒子进入电池后将能量传递给晶格，使晶格产生位移，产生移位损伤，形成的晶格缺陷成为载流子的复合中心，导致少数载流子的扩散长度变短，使光子载流子的收集能力下降，从而影响电池的光电转化效率；造成太阳能电池移位损伤原因主要来自空间质子和电子。电子由于质量轻，速度快，射程远大于电池的厚度，能够穿透整个电池，而且照成的损伤是均匀分布的。相比电子，质子损伤对于电池的影响更大，主要影响电池性能的填充因子FF，低能质子的射程有可能小于电池的厚度，而且随着入射深度的增加，造成的损伤随之增加，当质子能量变低停留在材料中时，产生了一个较大的损伤峰值。
空间辐射带质子通量的能量范围在0.1MeV～400MeV左右，而且通量随着能量的增加而递减。0.1MeV质子在GaInP/GaInAs/Ge太阳能中入射深度为1μm左右，质子停留位置主要落在中电池中，所以空间粒子辐射对GaInP/GaInAs/Ge太阳能电池的影响主要是对中电池的影响。
为了提高GaInP/GaInAs/Ge太阳能电池的抗辐照能力，目前常采用的技术主要是将顶电池GaInP的厚度减薄，使电池变成顶电池限流，使辐照后中电池电流的衰减不引起整个电流的变化；另外在中电池中增加分布式布拉格反射器(DBR)结构、减薄中电池GaInAs的厚度，使的中电池GaInAs抗辐照能力增强。虽然上述结构能够提升GaInP/GaInAs/Ge太阳能电池的抗辐照能力，但提升有限，目前GaInP/GaInAs/Ge太阳能电池辐照效率的剩余因子大概在85％左右，电池抗辐照的提升还有很大空间。
发明内容
本发明的目的在于提供一种抗辐照增强型空间GaInP/GaInAs/Ge电池外延片的制造方法。
本发明提供如下技术方案：一种抗辐照增强型空间GaInP/GaInAs/Ge电池外延片的制造方法，在中电池窗口层上生长较厚的AlGaAs阻隔层；空间辐射带质子通量随着能量的增加而递减，通过增加较厚的AlGaAs层，使得更高能量的入射质子停留在中电池基区，更高能量的质子通量较小，所以对电池的累计位移损伤更小，从而提升电池的抗辐照性能。
具体制造方法步骤如下：
提供一p-Ge衬底，在p-Ge衬底上依次外延生长n-AlGaInP成核层，n-GaAs/n-GaInAs缓冲层，n++-GaAs/p++-GaAs隧穿结层，p-AlGaAs/p-AlGaInAs(DBR)反射层，p-GaInP背场层，p-GaInAs基区层，再生长n-GaInAs发射区层，n-AlInP窗口层，n-AlGaAs阻隔层，n++-GaInP/p++-AlGaAs隧穿结层，p-AlGaInP背场层，p-GaInP基区层，再生长n-GaInP发射区层，n-AlInP窗口层和n+-GaAs欧姆接触层。
衬底材料为p-Ge；n-AlGaInP成核层的厚度为0.01μm，掺杂浓度为1～2×1018cm-3。
n-GaAs/n-GaInAs缓冲层的厚度为0.5μm，掺杂浓度为≥1×1018cm-3。
n++-GaAs/p++-GaAs隧穿结层，其中n++-GaAs层的厚度为0.01～0.03μm，掺杂浓度为≥5×1018cm-3，p++-GaAs层的厚度为0.01～0.03μm，掺杂浓度为≥1×1019cm-3。
p-AlGaAs/p-AlGaInAs(DBR)反射层的厚度为1.8μm，掺杂浓度为5×1017cm-3。
p-GaInP背场层的厚度为0.07μm，掺杂浓度为5×1017～1×1018cm-3。
p-GaInAs基区层的厚度共为2.1μm，掺杂浓度都为2～8×1016cm-3。
n-GaInAs发射区层的厚度为0.1μm，掺杂浓度为1×1018cm-3。
n-AlInP窗口层的厚度为0.1μm，掺杂浓度为1×1018cm-3。
n-AlGaAs阻隔层的厚度为2μm，掺杂浓度为1×1018cm-3。
n++-GaInP/p++-AlGaAs隧穿结层，其中n++-GaInP层的厚度为0.01～0.03μm，掺杂浓度为≥5×1018cm-3，p++-AlGaAs层的厚度为0.01～0.03μm，掺杂浓度为≥5×1019cm-3。
p-AlGaInP背场层的厚度为0.1μm，掺杂浓度为1～2×1018cm-3。
p-GaInP基区层的总厚度为0.7μm，掺杂浓度为1～8×1016cm-3。
n-GaInP发射区层的厚度为0.1μm，掺杂浓度为1×1018cm-3。
n-AlInP窗口层的厚度为0.1μm，掺杂浓度为1×1018cm-3。
n+-GaAs欧姆接触层厚度为0.5μm，掺杂浓度大于5×1018cm-3。
本发明提供了一种抗辐照增强型空间GaInP/GaInAs/Ge电池外延片的制造方法，其优点在于：和常规空间GaInP/InGaAs/Ge电池结构相比，在中电池窗口层上生长较厚(2μm)的AlGaAs阻隔层，通过增加较厚的AlGaAs层，使得通量更小的较高能量的入射质子停留在中电池基区，从而使得空间质子对电池的累计位移损伤减小，提升电池的抗辐照性能。
附图说明
图1是本发明涉及到的外延层结构的示意图；
附图标识如下：
100：P型Ge衬底； 101：n-AlGaInP成核层；
102：n-GaAs/n-GaInAs缓冲层； 103：n++-GaAs/p++-GaAs隧穿结层；
104：p-AlGaAs/p-AlGaInAs(DBR)反射层；
105：p-GaInP背场层； 106：p-GaInAs基区层；
107：n-GaInAs发射区层； 108：n-AlInP窗口层；
109：n-AlGaAs阻隔层； 110：n++-GaInP/p++-AlGaAs隧穿结层；
111：p-AlGaInP背场层； 112：p-GaInP基区层；
113：n-GaInP发射区层； 114：n-AlInP窗口层；
115：n+-GaAs欧姆接触层。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
一种抗辐照增强型空间GaInP/GaInAs/Ge电池外延片的制造方法，采用的设备为德国AXITRON公司生产的2600G3型MOCVD(Metal Organic Chemical Vapor Deposition，金属有机化合物化学气相沉淀)。衬底为p-Ge衬底，厚度为130～150μm，掺杂Ga源、浓度为0.2E18～3E18cm-3,9°切角。使用的MO源为TMGa、TMAl和TMIn，使用的掺杂源为CCl4、DEZn和SiH4，使用的特气为AsH3和PH3；
具体步骤如下：
A、MOCVD反应室通入PH3，将反应室升温至690℃，压力控制在230mbar，在p-Ge衬底表面通过P扩散形成N型掺杂约1×1018cm-3的Ge子电池。反应室降温至620℃，沉积n-AlGaInP成核层，通入的源分别为TMAl、TMGa、TMIn，特气为PH3，AlGaInP成核层沉积厚度为0.01μm，掺杂源SiH4、掺杂浓度为1～2×1018cm-3；
B、升高反应室温度至650℃、压力控制在450mbar，在n-AlGaInP成核层上沉积n-GaAs/n-GaInAs缓冲层，沉积厚度为0.5μm，掺杂源SiH4、掺杂浓度为≥1×1018cm-3；
C、降低反应室压力至50mbar，在GaAs/GaInAs缓冲层上以650℃温度沉积n++-GaAs层，其中n++-GaAs层沉积厚度为0.01-0.03μm，掺杂源SiH4、掺杂浓度≥5×1018cm-3，反应室温度降至620℃，在n++-GaAs层上沉积p++-GaAs层，p++-GaAs层的厚度为0.01-0.03μm，掺杂源CCl4、掺杂浓度≥1×1019cm-3；
D、升高反应室温度至650℃、在p++-GaAs层上沉积p-AlGaAs/p-AlGaInAs(DBR)反射层，p-AlGaAs/p-AlGaInAs反射层的厚度为1.8μm，掺杂源DEZn、掺杂浓度为5×1017cm-3；
E、在AlGaAs/AlGaInAs反射层上以650℃温度沉积p-GaInP背场层，p-GaInP背场层沉积厚度为0.07μm，掺杂源DEZn、掺杂浓度为5×1017～1×1018cm-3；
F、在GaInP背场层上以650℃温度沉积p-GaInAs基区层，沉积厚度2.1μm，掺杂源DEZn、掺杂浓度都为5×1017～1×1018cm-3。
G、在p-GaInAs基区层上以650℃温度沉积n-GaInAs发射区层，n-GaInAs发射区层沉积厚度为0.1μm，掺杂源SiH4、掺杂浓度为1×1018cm-3；
H、在GaInAs发射区层上以650℃温度沉积n-AlInP窗口层，n-AlInP窗口层沉积厚度为0.1μm，掺杂源SiH4、掺杂浓度为1×1018cm-3；
I、在AlInP窗口层上以650℃温度沉积n-AlGaAs阻隔层，n-AlGaAs阻隔层沉积厚度为2μm，掺杂源SiH4、掺杂浓度为1×1018cm-3；
J、降低反应室温度至620℃、在AlGaAs阻隔层上沉积n++-GaInP/p++-AlGaAs隧穿结层，其中：n++-GaInP层沉积厚度为0.01-0.03μm，掺杂源SiH4、掺杂浓度≥5×1018cm-3，p++-AlGaAs层沉积厚度为0.01-0.03μm，掺杂源CCl4、掺杂浓度为≥5×1019cm-3；
K、在GaInP/AlGaAs隧穿结层上以620℃温度沉积p-AlGaInP背场层，p-AlGaInP背场层沉积厚度为0.1μm，掺杂源DEZn、掺杂浓度为1～2×1018cm-3；
L、升高反应室温度至630℃、在AlGaInP背场层上沉积GaInP基区层，沉积厚度为0.7μm，掺杂源DEZn、掺杂浓度为1～8×1016cm-3；
M、在GaInP基区层上以630℃温度沉积n-GaInP发射区层，n-GaInP发射区层沉积厚度为0.1μm，掺杂源SiH4、掺杂浓度为1×1018cm-3；
N、在GaInP发射区层上以630℃温度生长n-AlInP窗口层，n-AlInP窗口层的厚度为0.1μm，掺杂源SiH4、掺杂浓度为1×1018cm-3；
O、在AlInP窗口层上以630℃温度沉积n+-GaAs欧姆接触层，n+-GaAs欧姆接触层沉积厚度为0.5μm，掺杂源SiH4、掺杂浓度≥5×1018cm-3。
需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型，本发明的范围由所附权利要求及其等同物限定。

Claims (4)

1.一种抗辐照增强型空间GaInP/GaInAs/Ge电池外延片的制造方法，其特征在于：在中电池窗口层上沉积2μm厚的AlGaAs阻隔层，具体步骤如下：
提供一p-Ge衬底，运用金属有机化合物化学气相沉淀设备技术(Metal OrganicChemical Vapor Deposition，MOCVD)，在p-Ge衬底上依次外延沉积n-AlGaInP成核层，n-GaAs/n-GaInAs缓冲层，n++-GaAs/p++-GaAs隧穿结层，p-AlGaAs/p-AlGaInAs(DBR)反射层，p-GaInP背场层，p-GaInAs基区层，n-GaInAs发射区层，n-AlInP窗口层，n-AlGaAs阻隔层，n++-GaInP/p++-AlGaAs隧穿结层，p-AlGaInP背场层，p-GaInP基区层，n-GaInP发射区层，n-AlInP窗口层和n+-GaAs欧姆接触层。
2.根据权利要求1所述的一种抗辐照增强型空间GaInP/GaInAs/Ge电池外延片的制造方法，其特征在于：
衬底材料为p-Ge，厚度为130～150μm，掺杂Ga源、浓度为0.2E18～3E18cm-3,9°切角；
n-AlGaInP成核层沉积厚度为0.01μm，掺杂源SiH4、掺杂浓度为1～2×1018cm-3；
n-GaAs/n-GaInAs缓冲层沉积厚度为0.5μm，掺杂源SiH4、掺杂浓度为≥1×1018cm-3；
n++-GaAs/p++-GaAs隧穿结层，其中n++-GaAs层沉积厚度为0.01-0.03μm，掺杂源SiH4、掺杂浓度为≥5×1018cm-3，p++-GaAs层沉积厚度为0.01-0.03μm，掺杂源CCl4、掺杂浓度为≥1×1019cm-3；
p-AlGaAs/p-AlGaInAs(DBR)反射层沉积厚度为1.8μm，掺杂源DEZn、掺杂浓度为5×1017cm-3；
p-GaInP背场层的沉积厚度为0.07μm，掺杂源DEZn、掺杂浓度为5×1017～1×1018cm-3；
p-GaInAs基区层沉积厚度为2.1μm，掺杂源DEZn、掺杂浓度都为2～8×1016cm-3；
n-GaInAs发射区层沉积厚度为0.1μm，掺杂源SiH4、掺杂浓度为1×1018cm-3；
n-AlInP窗口层沉积厚度为0.1μm，掺杂源SiH4、掺杂浓度为1×1018cm-3；
n-AlGaAs阻隔层沉积厚度为2μm，掺杂源SiH4、掺杂浓度为1×1018cm-3；
n++-GaInP/p++-AlGaAs隧穿结层，其中n++-GaInP层沉积厚度为0.01-0.03μm，掺杂源SiH4、掺杂浓度为≥5×1018cm-3，p++-AlGaAs层沉积厚度为0.01-0.03μm，掺杂源CCl4、掺杂浓度为≥5×1019cm-3；
p-AlGaInP背场层沉积厚度为0.1μm，掺杂源DEZn、掺杂浓度为1～2×1018cm-3；
p-GaInP基区层，厚度为0.7μm，掺杂源DEZn、掺杂浓度为1～8×1016cm-3；
n-GaInP发射区层沉积厚度为0.1μm，掺杂源SiH4、掺杂浓度为1×1018cm-3；
n-AlInP窗口层沉积厚度为0.1μm，掺杂源SiH4、掺杂浓度为1×1018cm-3；
n+-GaAs欧姆接触层沉积厚度为0.5μm，掺杂源SiH4、掺杂浓度大于5×1018cm-3。
3.根据权利要求1所述的一种抗辐照增强型空间GaInP/GaInAs/Ge电池外延片的制造方法，其特征在于：在中电池窗口层上沉积AlGaAs阻隔层。
4.根据权利要求1所述的一种抗辐照增强型空间GaInP/GaInAs/Ge电池外延片的制造方法，其特征在于：在中电池窗口层上沉积AlGaAs阻隔层，MOCVD反应室温度650℃，压力50mbar，沉积厚度为2μm，掺杂源SiH4、掺杂浓度为1×1018cm-3。
CN201811421360.3A 2018-11-26 2018-11-26 一种抗辐照增强型空间GaInP/GaInAs/Ge电池外延片的制造方法 Pending CN109545898A (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110311006A (zh) * 2019-07-30 2019-10-08 扬州乾照光电有限公司 一种提高抗辐照性能的多结太阳能电池及制作方法

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