CN104300015A - AlGaAs/GaInAs/Ge连续光谱太阳能电池 - Google Patents

AlGaAs/GaInAs/Ge连续光谱太阳能电池 Download PDF

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CN104300015A
CN104300015A CN201410539502.1A CN201410539502A CN104300015A CN 104300015 A CN104300015 A CN 104300015A CN 201410539502 A CN201410539502 A CN 201410539502A CN 104300015 A CN104300015 A CN 104300015A
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王智勇
张杨
杨光辉
陈丙振
尧舜
张奇灵
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Beijing University of Technology
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Abstract

AlGaAs/GaInAs/Ge连续光谱太阳能电池，包括底电池、中间电池、顶电池以及连接各子电池的隧道结；所述底电池是Gepn结电池，所述中间电池Base层由晶格匹配的GaIn0.01As和In组分渐变的应变Ga1-xInxAs量子阱构成，所述顶电池是Base层为Al组分渐变的AlGaAs结构，所述多结太阳电池各子电池短路电流相等，并用隧道结相连接。同时，各子电池和其间的隧道结均与衬底实现晶格匹配。各子电池及其间的隧道结均用MOCVD在衬底上生长而成。该电池壳充分利用太阳光不同波段的光子能量，提高太阳电池的光电转换效率。

Description

AlGaAs/GaInAs/Ge连续光谱太阳能电池
技术领域
本发明涉及一种高效率多结太阳能电池，属半导体材料技术领域。
背景技术
随着现代工业的发展，全球能源危机和大气污染问题日益突出，太阳能作为理想的可再生能源受到了越来越多国家的重视，开展太阳能电池研究、发展光伏发电产业对国家能源的可持续发展具有非常重要的意义。目前，太阳能电池的面临的主要问题为光电转换效率较低，性价比不高，不能满足大规模民用的需求。商用太阳能电池中，单晶硅和多晶硅电池约占90％的市场份额。商用单晶硅电池的转化效率约为16％-20％，多晶硅电池约为14％-16％。其光电转换效率均有待提高。
将多种不同带隙的半导体材料搭配，组成多结太阳电池，可以充分利用太阳光不同波段的光子能量，提高太阳电池的光电转换效率。美国波音公司子公司Spectrolab研制的晶格匹配Ga0.5In0.5P/Ga0.99In0.01As/Ge三结太阳电池在无聚光条件下光电转换效率达32％(AM1.5，25℃)，在135倍聚光条件下，光电转化效率达40.1％。对于三结或三结以上的太阳电池，最高效率材料组合均需要带隙在1.0eV附近的材料来满足电流匹配条件，遗憾的是迄今为止未找到同时满足晶格匹配和电流匹配的三结或三结以上的太阳电池组合。电流匹配而晶格不匹配结构虽然可以使得叠层太阳电池效率略有提高，但是由于外延层晶格与衬底匹配较大，电池材料质量难于保障，成品率较低。
发明内容
本发明要解决的技术问题是克服现有多结太阳电池电流匹配和晶格匹配不相容的缺点，通过In组分渐变的Ga1-xInxAs量子阱中电池Base层，Al组分渐变的AlGaAs顶电池Base层，实现一种AlGaAs/GaInAs/Ge连续光谱太阳能电池，且与Ge衬底晶格匹配，适合构造电流匹配的三结及以上太阳电池。
本发明的技术问题是通过以下解决方案实现的：AlGaAs/GaInAs/Ge连续光谱太阳能电池，包括底电池、中间电池、顶电池以及连接各子电池的隧道结；具体而言，底电池包括p型Ge衬底(1)、n型GeEmitter层(2)、n型GaInP2Window层(3)；中间电池包括P-AlGaAsBSF层(6)、P-GaInAs/GaIn0.1AsBase渐变MQWs层(7)、N-GaInAsEmitter层(8)、N-AlGaAsWindow层(9)；、顶电池包括P-AlGaInPBSF层(12)、P-AlGaAsBase渐变层(13)、N-GaInPEmitter层(14)、N-AlInPWindow层(15)；隧道结包括N++GaInP层(4)、P++AlGaAs层(5)、N++GaInP层(10)、P++AlGaAs层(11)；
所述底电池是Gepn结电池，所述中间电池Base层由晶格匹配的GaIn0.01As和In组分渐变的应变Ga1-xInxAs量子阱构成，所述顶电池是Base层为Al组分渐变的AlGaAs结构，所述多结太阳电池各子电池短路电流相等，并用隧道结相连接。同时，各子电池和其间的隧道结均与衬底实现晶格匹配。各子电池及其间的隧道结均用MOCVD在衬底上生长而成。
其中，所述p型Ge衬底(1)、n型GeEmitter层(2)、n型GaInP2Window层(3)、N++GaInP层(4)、P++AlGaAs层(5)、P-AlGaAsBSF层(6)、P-GaInAs/GaIn0.1AsBase渐变MQWs层(7)、N-GaInAsEmitter层(8)、N-AlGaAsWindow层(9)、N++GaInP层(10)、P++AlGaAs层(11)、P-AlGaInPBSF层(12)、P-AlGaAsBase渐变层(13)、N-GaInPEmitter层(14)、N-AlInPWindow层(15)、N++GaInAsContact层(16)，从上至下依次层叠放置。N++GaInAsContact层(16)作为接触层。
上述Ge底电池p-GeBase层掺杂浓度为1×1017cm-3-1×1018cm-3，n型Emitter层通过MOCVD中PH3的P扩散获得，Emitter层厚度60-200nm，掺杂浓度为6×1018cm-3-3×1019cm-3。
上述底电池和中间电池、以及中间电池和底电池之间有一层p型高掺杂的AlGaAs和n型高掺杂的GaInP组成的隧道结，隧道结各层厚度为5-15nm，掺杂浓度1×1019cm-3-2×1020cm-3。
上述底电池和隧道结之间有一层n型GaInAs缓冲层。
室温下GaInAs的带隙与In的组分关系的计算公式如下：
EGaInAs＝1.42-1.49xIn+0.43xIn 2(eV)      (1)
其中，EGaInAs为GaInAs带隙，xIn为In的组分。
中电池Base层掺杂浓度为1×1016cm-3-1×1017cm-3；中电池Emitter层n型GaAs掺杂浓度1×1018cm-3-5×1018cm-3。
上述中电池和顶电池的材料结构和带隙可根据电池工作条件调整以便满足晶格匹配和电流匹配条件。
与现有技术相比，本发明的优点有：中间电池Base层由晶格匹配的GaIn0.01As和In组分渐变的应变Ga1-xInxAs量子阱构成，顶电池Base层采用Al组分渐变AlGaAs结构，禁带宽度在0.67eV-1.98eV连续可调，且晶格匹配、技术成熟，可以充分利用太阳光不同波段的光子能量，提高太阳电池的光电转换效率。
附图说明
图1是本发明的一个优选三结太阳电池结构示意图。
图2是晶格应变原理示意图。
图中：1、p型Ge衬底，2、n型GeEmitter层，3、n型GaInP2Window层，4、N++GaInP层，5、P++AlGaAs层，6、P-AlGaAsBSF层，7、P-GaInAs/GaIn0.1AsBase渐变MQWs层，8、N-GaInAsEmitter层，9、N-AlGaAsWindow层，10、N++GaInP层，11、P++AlGaAs层，12、P-AlGaInPBSF层，13、P-AlGaAsBase渐变层，14、N-GaInPEmitter层，15、N-AlInPWindow层，16、N++GaInAsContact层。
具体实施方式
下面结合实施例对本发明作进一步描述，但不应以此限制本发明的保护范围。
实施例一：参见附图1所示，AlGaAs/GaInAs/Ge连续光谱太阳能电池的制备方法，包括下列步骤：
S1采用p型Ge衬底1，厚度130-230un，掺杂浓度1×1017cm-3-1×1018cm-3，作为Ge底电池Base层。
S2Ge衬底表面P扩散形成n型GeEmitter层2，以获得底电池，Emitter层厚度60-200nm，掺杂浓度为6×1018cm-3-3×1019cm-3。
S3生长200-300nmn型GaInP2Window层3，掺杂浓度为5×1018cm-3。
S4生长简并n型掺杂浓度大于1×1019cm-3、厚度为10nm的AlGaAs层4，形成隧道结，以连接中间电池与底电池。
S5生长简并p型掺杂大于6×1019cm-3、厚度为8nm的GaInP层5，形成隧道结，以连接中间电池与底电池。
S6生长90nmp型掺杂浓度约为1×1018cm-3的Al0.3Ga0.7As层6，作为中间电池的背场。
S7生长80nmp型掺杂浓度约为1×1017cm-3的GaIn0.01As层，生长5-20nmp型掺杂浓度约为1×1017cm-3的In组分逐渐变小的p型Ga1-xInxAs层，共50周期构成中电池Base层7。
其中，中间电池Base层由晶格匹配的p型GaIn0.01As和In组分渐变的p型应变Ga1-xInxAs量子阱构成，中间电池Emitter层由100-200nm晶格匹配的n型GaIn0.01As构成。调节In组分，使得Ga1-xInxAs的禁带宽度沿生长方向从0.67eV递增至1.42eV。其中，Base层晶格匹配的GaIn0.01As厚度为50-100nm，In组分渐变的Ga1-xInxAs厚度为5-20nm，Base层量子阱总周期数大于50，Base层总厚度大于3um。晶格应力释放原理如图2所示。
S8生长150nmn型掺杂浓度约为5×1017cm-3的GaIn0.01As层，构成中电池Emitter层8。
S9生长80nm厚的n型AlInP2层，作为中间电池的Window层9，掺杂浓度为5×1018cm-3。
S10生长简并n型掺杂浓度大于1×1019cm-3、厚度为10nm的AlGaAs层10，形成隧道结，以连接中间电池与底电池。
S11生长简并p型掺杂大于6×1019cm-3、厚度为8nm的GaInP层11，形成隧道结，以连接中间电池与底电池。
S12生长80nm厚的p型AlGaInP层12，作为顶电池的背场层，掺杂浓度为5×1017cm-3。
S13生长800nm掺杂浓度为的p型1×1018cm-3的组分逐渐变大的AlGaAs层13，构成顶电池Base层。
其中，顶电池Base层为Al组分渐变的AlGaAs结构，调节Al组分，使AlGaAs的禁带宽度沿生长方向从1.42eV递增至1.98eV，晶格应力释放原理如图2所示。
S14生长100nm，掺杂浓度为5×1018cm-3的n型AlGaAs层14，构成顶电池的Emitter层。
S15生长50nmn型AlInP2层15，作为顶电池的Window层，掺杂浓度为5×1018cm-3。
S16生长100nm掺杂浓度5×1018cm-3的n型GaIn0.01As层16，作为接触层。
所述中间电池Base层由晶格匹配的p型GaIn0.01As和In组分渐变的p型应变Ga1-xInxAs量子阱构成，调节In组分，使得Ga1-xInxAs的禁带宽度沿生长方向从0.67eV递增至1.42eV。其中，Base层晶格匹配的GaIn0.01As厚度为50-100nm，In组分渐变的Ga1-xInxAs厚度为5-20nm，Base层量子阱总周期数大于50，Base层总厚度大于3um。
顶电池Base层为约800nm掺杂浓度为的p型1×1018cm-3的组分逐渐变大的AlGaAs层。调节Al组分，使AlGaAs的禁带宽度沿生长方向从1.42eV递增至1.98eV。
衬底可为Si、Ge、SiC、GaAs中的一种。
接触层可为Ti/Au、Ti/Pt/Au、Ti/Al/Au、Ni、Ni/Au、Cr/Au、Pd、Ti/Pd/Au、Pd/Au中的一种。

Claims (6)

1.AlGaAs/GaInAs/Ge连续光谱太阳能电池，其特征在于：包括底电池、中间电池、顶电池以及连接各子电池的隧道结；具体而言，底电池包括p型Ge衬底(1)、n型Ge Emitter层(2)、n型GaInP2Window层(3)；中间电池包括P-AlGaAs BSF层(6)、P-GaInAs/GaIn0.1As Base渐变MQWs层(7)、N-GaInAs Emitter层(8)、N-AlGaAs Window层(9)；、顶电池包括P-AlGaInP BSF层(12)、P-AlGaAs Base渐变层(13)、N-GaInP Emitter层(14)、N-AlInPWindow层(15)；隧道结包括N++GaInP层(4)、P++AlGaAs层(5)、N++GaInP层(10)、P++AlGaAs层(11)；
所述底电池是Ge pn结电池，所述中间电池Base层由晶格匹配的GaIn0.01As和In组分渐变的应变Ga1-xInxAs量子阱构成，所述顶电池是Base层为Al组分渐变的AlGaAs结构，所述多结太阳电池各子电池短路电流相等，并用隧道结相连接；同时，各子电池和其间的隧道结均与衬底实现晶格匹配；各子电池及其间的隧道结均用MOCVD在衬底上生长而成；
其中，所述p型Ge衬底(1)、n型Ge Emitter层(2)、n型GaInP2Window层(3)、N++GaInP层(4)、P++AlGaAs层(5)、P-AlGaAsBSF层(6)、P-GaInAs/GaIn0.1As Base渐变MQWs层(7)、N-GaInAsEmitter层(8)、N-AlGaAs Window层(9)、N++GaInP层(10)、P++AlGaAs层(11)、P-AlGaInP BSF层(12)、P-AlGaAs Base渐变层(13)、N-GaInP Emitter层(14)、N-AlInP Window层(15)、N++GaInAs Contact层(16)，从上至下依次层叠放置；N++GaInAsContact层(16)作为接触层。
2.根据权利要求1所述的AlGaAs/GaInAs/Ge连续光谱太阳能电池，其特征在于：AlGaAs/GaInAs/Ge连续光谱太阳能电池的制备方法，包括下列步骤，
S1采用p型Ge衬底(1)，厚度130-230un，掺杂浓度1×1017cm-3-1×1018cm-3，作为Ge底电池Base层；
S2Ge衬底表面P扩散形成n型Ge Emitter层(2)，以获得底电池，Emitter层厚度60-200nm，掺杂浓度为6×1018cm-3-3×1019cm-3；
S3生长200-300nmn型GaInP2Window层(3)，掺杂浓度为5×1018cm-3；
S4生长简并n型掺杂浓度大于1×1019cm-3、厚度为10nm的AlGaAs层(4)，形成隧道结，以连接中间电池与底电池；
S5生长简并p型掺杂大于6×1019cm-3、厚度为8nm的GaInP层(5)，形成隧道结，以连接中间电池与底电池；
S6生长90nm p型掺杂浓度约为1×1018cm-3的Al0.3Ga0.7As层(6)，作为中间电池的背场；
S7生长80nm p型掺杂浓度约为1×1017cm-3的GaIn0.01As层，生长5-20nm p型掺杂浓度约为1×1017cm-3的In组分逐渐变小的p型Ga1-xInxAs层，共50周期构成中电池Base层(7)；
其中，中间电池Base层由晶格匹配的p型GaIn0.01As和In组分渐变的p型应变Ga1-xInxAs量子阱构成，中间电池Emitter层由100-200nm晶格匹配的n型GaIn0.01As构成；调节In组分，使得Ga1-xInxAs的禁带宽度沿生长方向从0.67eV递增至1.42eV；其中，Base层晶格匹配的GaIn0.01As厚度为50-100nm，In组分渐变的Ga1-xInxAs厚度为5-20nm，Base层量子阱总周期数大于50，Base层总厚度大于3um；
S8生长150nm n型掺杂浓度约为5×1017cm-3的GaIn0.01As层，构成中电池Emitter层(8)；
S9生长80nm厚的n型AlInP2层，作为中间电池的Window层(9)，掺杂浓度为5×1018cm-3；
S10生长简并n型掺杂浓度大于1×1019cm-3、厚度为10nm的AlGaAs层(10)，形成隧道结，以连接中间电池与底电池；
S11生长简并p型掺杂大于6×1019cm-3、厚度为8nm的GaInP层(11)，形成隧道结，以连接中间电池与底电池；
S12生长80nm厚的p型AlGaInP层(12)，作为顶电池的背场层，掺杂浓度为5×1017cm-3；
S13生长800nm掺杂浓度为的p型1×1018cm-3的组分逐渐变大的AlGaAs层(13)，构成顶电池Base层；
其中，顶电池Base层为Al组分渐变的AlGaAs结构，调节Al组分，使AlGaAs的禁带宽度沿生长方向从1.42eV递增至1.98eV；
S14生长100nm，掺杂浓度为5×1018cm-3的n型AlGaAs层(14)，构成顶电池的Emitter层；
S15生长50nm n型AlInP2层(15)，作为顶电池的Window层，掺杂浓度为5×1018cm-3；
S16生长100nm掺杂浓度5×1018cm-3的n型GaIn0.01As层(16)，作为接触层。
3.根据权利要求1所述的AlGaAs/GaInAs/Ge连续光谱太阳能电池，其特征在于：所述中间电池Base层由晶格匹配的p型GaIn0.01As和In组分渐变的p型应变Ga1-xInxAs量子阱构成，调节In组分，使得Ga1-xInxAs的禁带宽度沿生长方向从0.67eV递增至1.42eV；其中，Base层晶格匹配的GaIn0.01As厚度为50-100nm，In组分渐变的Ga1-xInxAs厚度为5-20nm，Base层量子阱总周期数大于50，Base层总厚度大于3um。
4.根据权利要求1所述的AlGaAs/GaInAs/Ge连续光谱太阳能电池，其特征在于：顶电池Base层为约800nm掺杂浓度为的p型1×1018cm-3的组分逐渐变大的AlGaAs层；调节Al组分，使AlGaAs的禁带宽度沿生长方向从1.42eV递增至1.98eV。
5.根据权利要求1所述的AlGaAs/GaInAs/Ge连续光谱太阳能电池，其特征在于：其衬底可为Si、Ge、SiC、GaAs中的一种。
6.根据权利要求1所述的AlGaAs/GaInAs/Ge连续光谱太阳能电池，其特征在于：接触层可为Ti/Au、Ti/Pt/Au、Ti/Al/Au、Ni、Ni/Au、Cr/Au、Pd、Ti/Pd/Au、Pd/Au中的一种。
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