CN107293495A - A kind of power model and its manufacture method - Google Patents
A kind of power model and its manufacture method Download PDFInfo
- Publication number
- CN107293495A CN107293495A CN201610194446.1A CN201610194446A CN107293495A CN 107293495 A CN107293495 A CN 107293495A CN 201610194446 A CN201610194446 A CN 201610194446A CN 107293495 A CN107293495 A CN 107293495A
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- Prior art keywords
- copper bar
- chip unit
- housing
- chip
- dividing plate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
The invention discloses a kind of power model and its manufacture method, belong to technical field of electronic devices, the traditional power model integrated level solved is low, the higher technical problem of application and development difficulty.The manufacture method includes：Form the chip unit for being provided with power chip, resistance and thermo-sensitive resistor；Multiple chip units are arranged on radiating bottom plate, and connect on chip unit electric-conductor；Structure of copper bar and current sensor are set around chip unit on radiating bottom plate, structure of copper bar has positive end, and negative end is set in the extreme portion of exchange with extreme portion, current sensor is exchanged；Carry out inside chip unit, the current potential between chip unit and between structure of copper bar and chip unit is connected so that multiple chip units constitute half-bridge circuits；Dividing plate is set on structure of copper bar, and dividing plate has pierced pattern, and electric-conductor passes through the pierced pattern；Drive circuit board is set on dividing plate and electric-conductor and drive circuit board is connected.
Description
Technical field
The present invention relates to technical field of electronic devices, specifically, it is related to a kind of power model and its manufacture method.
Background technology
Power model is the advanced hybrid integrated power component by kernel of IGBT, by high-speed low-power-consumption IGBT tube cores and excellent
The gate drive circuit of change, and fast protection circuit are constituted.IGBT tube cores in power model all select high-speed type, and
Drive circuit abuts IGBT, and driving delay is small, so power model switching speed is fast, is lost small.Power model is internally integrated
IGBT electric currents and the real-time detection circuit of temperature can be continuously detected, when occurring heavy overload even direct short-circuit, and temperature
During overheat, IGBT will be simultaneously emitted by fault-signal by controlledly soft switching.Power model has knot compared with simple IGBT
Structure is compact, reliability is high, it is easy to use the advantages of, be particularly suitable for use in the occasions such as motor frequency conversion, electric propulsion, servo-drive.
Conventional power module, which is manufactured, generally acts as a switching device use, needs optional equipment driver, control circuit
The parts such as plate, sensor formation (PCC) power unit.In rectification/inverter circuit, it is desirable to use multiple power model connection in series-parallel
Loop is constituted, wherein each power model is equipped with the parts such as special driver, radiating bottom plate, bulky, circuit connects
Complexity is connect, integrated level is not high, causing control signal to be delayed, false triggering probability is high, and random thoughts noise is larger.And applying power mould
When block carries out transformation of electrical energy with control, the stream of the inconsistent initiation of different capacity module parameter, pressure, driving problems are transferred to
The Components Development link in downstream, the accumulation of problem such as IGBT applications, the control of circuit random thoughts, signal distributions formula increases Components Development
Difficulty is higher for application and development level requirement.Conventional power module is weak there is also heat-sinking capability, and manufacturing process complexity etc. is asked
Topic.
Therefore, a kind of integrated level is needed badly high, the low power model of application and development difficulty and its manufacture method.
The content of the invention
It is an object of the invention to provide a kind of power model and its manufacture method, with traditional power model collection of solution
Into low, the higher technical problem of application and development difficulty of degree.
The present invention provides a kind of power model manufacture method, and this method includes：
Chip unit is formed, chip unit includes：Liner plate and power chip, resistance and the temperature being arranged on liner plate
Quick resistance；
Multiple chip units are arranged on radiating bottom plate, and connect on chip unit electric-conductor；
Structure of copper bar and current sensor are set around chip unit on radiating bottom plate, structure of copper bar has positive terminal
Portion, negative end is set in the extreme portion of exchange with extreme portion, current sensor is exchanged；
Carry out inside chip unit, the current potential between chip unit and between structure of copper bar and chip unit is connected, make
Obtain multiple chip units and constitute half-bridge circuits；
Dividing plate is set on structure of copper bar, and dividing plate has pierced pattern, and electric-conductor passes through pierced pattern；
Drive circuit board is set on dividing plate and electric-conductor and drive circuit board is connected.
Include the step of the setting structure of copper bar on radiating bottom plate：
Bottom housing is set on radiating bottom plate, and bottom housing has the protrusion structure for being used for accommodating current sensor；
Structure of copper bar is exchanged into extreme portion through current sensor；
Structure of copper bar is bonded on the radiating bottom plate, and current sensor is buckled into the prominent of bottom housing simultaneously and is tied
In structure.
The structure of copper bar includes：Three layers of copper bar being combined with each other, the positive end, negative end with exchange extreme
Portion is separately positioned on three layers of copper bar, carrying out inside chip unit, between chip unit and structure of copper bar and chip unit
Between current potential include the step of connect：
Circuit logic based on half-bridge circuit, by lead binding carry out chip unit inside, between chip unit and
Chip unit is connected with the current potential of three layers of copper bar, is made the positive pole of the half-bridge circuit being made up of multiple chip units, negative pole and is exchanged
Pole is connected with being correspondingly arranged on the copper bar layer of positive end, negative end and the extreme portion of exchange respectively.
Include the step of dividing plate is set：
Middle level housing and dividing plate are set on bottom housing, and middle level housing and dividing plate are structure as a whole, and dividing plate has water conservancy diversion
Structure, hole for injecting glue and exhaust structure, middle level housing have the protrusion structure that corresponding bottom housing is set, and are set by middle level housing
After being placed on bottom housing, the accommodation space of the protrusion structure of middle level housing and the protrusion structure composition of bottom housing passes electric current
In sensor is contained in；
Insulated by flow-guiding structure and hole for injecting glue to being injected in the cavity that bottom housing, radiating bottom plate and dividing plate are constituted
Glue, makes air in the lead in the insulating cement covering cavity of injection, cavity be discharged by exhaust structure；
Make insulation adhesive curing.
The electric-conductor is spring signal pin, in the setting drive circuit board and connects electric-conductor and drive circuit board
Step includes：
Control board is installed on dividing plate, makes the spring signal pin and the drive circuit through dividing plate pierced pattern
Plate constitutes secondary pin hole communicating structure；
Through-contacts are welded, the vertical signal bang path of drive circuit board and chip unit is formed.
Include the step of the formation chip unit：
Solder is deployed in the welding region on liner plate；
Place power chip, resistance and thermo-sensitive resistor respectively in corresponding welding region, carry out vacuum welding.
Include in the step being arranged on chip unit on radiating bottom plate：
It is synchronous to carry out between chip unit and radiating bottom plate, and the welding between chip unit and electric-conductor.
The present invention also provides a kind of power model, and the module includes：
Housing, its bottom is provided with radiating bottom plate；
Multiple chip units, it is arranged on the radiating bottom plate, and the chip unit includes：Liner plate and it is arranged on described
Power chip, resistance and thermo-sensitive resistor on liner plate；
Structure of copper bar, it is arranged on the radiating bottom plate around the chip unit, and the structure of copper bar has positive pole
End, negative end is connected with extreme portion, the structure of copper bar is exchanged with the chip unit so that the multiple chip unit
Constitute half-bridge circuit；
Dividing plate, it is arranged on the structure of copper bar, and the dividing plate has pierced pattern；
Drive circuit board, it is arranged on the dividing plate, and the drive circuit board passes through leading through the pierced pattern
Electric part is connected with the chip unit；
Current sensor, it is set in the extreme portion of exchange.
The housing includes：Top cover, middle level housing and bottom housing, the bottom housing are fixed with the radiating bottom plate,
The middle level housing is engaged with the top cover and bottom housing respectively up and down, and the middle level housing and the dividing plate are integrated knot
Structure, the bottom housing and middle level housing have the protrusion structure of corresponding setting, and the current sensor is contained in the bottom
In the accommodation space of the protrusion structure composition of layer housing and middle level housing.
Structure of copper bar includes：Three layers of copper bar being combined with each other, are provided with insulation between its upper and lower surface and every layer of copper bar
Film, the connection current potential of chip unit according to half-bridge circuit logical AND is connected three layers of copper bar respectively, the positive end, negative pole
End is not arranged on three layers of copper bar with extreme portion is exchanged, and the positive end, negative end extends with extreme portion is exchanged
The housing.
The power model and its manufacture method that the present invention is provided have integrated level height, power relative to traditional power model
The advantage that density is big, intelligent, encapsulated moulding is fast.
1st, integrated level is high.Its manufacture method of the power model that the present invention is provided possesses to be opened based on existing IGBT power models
The repertoire of the component of hair, will existing IGBT power models apply between the disparate modules that run into parameter characteristic it is inconsistent,
The problems such as random thoughts noise, which are concentrated, to be solved, in single one encapsulation, so as to improve the electrical property of power model, to reduce group
Part development difficulty.
2nd, be conducive to giving full play to the power grade of power chip.Its manufacture method of the power model that the present invention is provided is used
The mode that power chip is welded with radiating bottom plate, structure of copper bar is Nian Jie with radiating bottom plate, makes power chip and structure of copper bar can
Power consumption is transferred directly to by radiating bottom plate with the advantage that thermal resistance link is minimum, the cooling condition of crucial thermal source is improved, so as to fill
Divide and excavate the available power grade space of power chip.
3rd, power interconnection is efficiently quick, and power model topological sum function-variable is strong.The power model that the present invention is provided its
The circuit topology of the applicable any flexible configuration of manufacture method, is disposably realized in one single chip unit in single package structure
Power between portion, different chip unit, between chip unit and structure of copper bar is interconnected, and power interconnects used lead and tied up
Determine technology, also therefore possess the product platform to the technological leapfrogging such as broadband connection, film sintered.
4th, it is easy to implement the accurate control of signal.In power model its manufacture method that the present invention is provided, spring signal
Pin one end is directly welded on chip unit, and the direct insertion of the other end is to control board, each direct short distance pair of power chip
The command signal for taking control board is obtained, so as to improve the response speed of power chip switch motion, is evaded because of signal delay
Caused false triggering.
5th, manufacturing process is simple, and power model shaping is fast, and cost is low.The manufacture method step that the present invention is provided is followed, can
Disposal molding of the power chip to component is completed, part intermediate link and its uncertain factor is saved, so as to reduce cost, increased
Strong quality controllability.
Other features and advantages of the present invention will be illustrated in the following description, also, the partial change from specification
Obtain it is clear that or being understood by implementing the present invention.The purpose of the present invention and other advantages can be by specification, rights
Specifically noted structure is realized and obtained in claim and accompanying drawing.
Brief description of the drawings
In order to it is clearer explanation the embodiment of the present invention in technical scheme, in being described below to embodiment required for
Accompanying drawing does simple introduction：
Fig. 1 is the overall cross-sectional view of power model provided in an embodiment of the present invention；
Fig. 2 is the exploded perspective structural representation of power model provided in an embodiment of the present invention；
Fig. 3 is the structural representation of structure of copper bar provided in an embodiment of the present invention；
Fig. 4 is the schematic flow sheet of the manufacture method of power model provided in an embodiment of the present invention.
Description of reference numerals：
1st, power chip 2, resistance 3, thermo-sensitive resistor 4, liner plate 5, radiating bottom plate 6, electric-conductor 7, copper bar knot
Structure 8, current sensor 9, bottom housing 10, middle level housing 11, drive circuit board 12, top cover 13, lead 14, dividing plate
15th, chip unit 16, positive end 17, negative end 18, the extreme portion of exchange
Embodiment
Describe embodiments of the present invention in detail below with reference to drawings and Examples, how the present invention is applied whereby
Technological means solves technical problem, and reaches the implementation process of technique effect and can fully understand and implement according to this.Need explanation
As long as not constituting each embodiment in conflict, the present invention and each feature in each embodiment can be combined with each other,
The technical scheme formed is within protection scope of the present invention.
The embodiment of the present invention provides a kind of power model, and as depicted in figs. 1 and 2, the power model includes：Housing, radiating
Bottom plate 5, multiple chip units 15, structure of copper bar 7, dividing plate 14, drive circuit board 11 and current sensor 8.Radiating bottom plate 5 is set
Put in housing bottom.Chip unit 15 is arranged on radiating bottom plate 5, and chip unit 15 includes：Liner plate 4 and it is arranged on liner plate 4
Power chip 1, resistance 2 and thermo-sensitive resistor 3.Structure of copper bar 7 is arranged on radiating bottom plate 5 around chip unit 15,
Structure of copper bar 7 has positive end 16, and negative end 17 is connected with chip unit 15, made with extreme portion 18, structure of copper bar 7 is exchanged
Obtain multiple chip units 15 and constitute half-bridge circuits.Dividing plate 14 is arranged on structure of copper bar 7, and dividing plate 14 has pierced pattern.Driving
Circuit board 11 is arranged on dividing plate, and drive circuit board 11 is connected by the electric-conductor 6 through pierced pattern with chip unit 15.Electricity
Flow sensor 8 is set in structure of copper bar and exchanged in extreme portion 18.In embodiments of the present invention.Electric-conductor uses spring signal pin.
Further, in one embodiment of the invention, housing includes：Top cover 12, middle level housing 10 and bottom shell
Body 9, bottom housing 9 is fixed on radiating bottom plate 5, and middle level housing is engaged with top cover 12 and bottom housing 9 respectively about 10, and in
Layer housing 10 and dividing plate 14 are structure as a whole.Bottom housing 9 and middle level housing 10 have the protrusion structure of corresponding setting, electric current
Sensor 8 is contained in the accommodation space of the protrusion structure composition of bottom housing 9 and middle level housing 10.
Flow-guiding structure, hole for injecting glue and the exhaust structure for facilitating insulating cement to inject, flow-guiding structure and note are additionally provided with dividing plate 14
Glue hole is used to inject insulating cement into the cavity being made up of dividing plate 14, bottom housing 9 and radiating bottom plate 5, and exhaust structure is used for
Air is discharged during injecting glue.
It is provided with the integrative-structure that middle level housing 10 and dividing plate 14 are constituted for being consolidated with bottom housing 9 and top cover 12
Fixed screw thread, middle level housing 10 and dividing plate 14 are installed by screw thread on bottom housing 9, are formed by bottom housing 9, radiating bottom plate
5 and dividing plate 14 constitute have sealing, insulating cement injection water conservancy diversion, insulating cement flow degassing function cavity body structure, chip unit
15 is exposed in the cavity with spring signal pin.Then, by the hole for injecting glue on dividing plate 14 to by bottom housing 9 and radiating bottom plate
Injection insulating cement in 5 cavitys constituted, and the component in the cavity, such as chip unit 15, structure of copper bar 7 are covered step by step,
In overwrite procedure, the air in cavity flows out from the exhaust structure of dividing plate 14.
Further, as shown in figure 3, structure of copper bar 7 includes：Three layers of copper bar being combined with each other, its upper and lower surface and every
Dielectric film is provided between layer copper bar, three layers of copper bar connect according to the connection current potential of half-bridge circuit logical AND chip unit 15 respectively
Connect, positive end 16, negative end 17 is separately positioned on three layers of copper bar with extreme portion 18 is exchanged, and positive end 16, negative pole
Extend housing with extreme portion 18 is exchanged in end 17.The concrete shape and size of the electrode order of three layers of copper bar and every layer of copper bar
It is designed the need for being interconnected according to specific power.
In one embodiment of the invention, radiating bottom plate 5 is to be set on liquid cooling radiating bottom plate, radiating bottom plate 5
There is the gateway of coolant.Certainly, radiating bottom plate is alternatively wind-cooling heat dissipating bottom plate or other radiating bottom plates, is not limited herein.
The embodiment of the present invention provides a kind of manufacture method of above-mentioned power model simultaneously, as shown in figure 4, this method includes：
Step 101 is to step 106.In a step 101, chip unit is formed, chip unit includes：Liner plate and the work(being arranged on liner plate
Rate chip, resistance and thermo-sensitive resistor.In this step, solder is deployed in the welding region on liner plate first, then
Place power chip, resistance and thermo-sensitive resistor respectively in corresponding welding region, then carry out vacuum welding.By solder portion
The mode on liner plate is affixed one's name to, can be screen-printing deposition, or block weld tabs is directly placed in welding region.
In a step 102, multiple chip units are arranged on radiating bottom plate, and connect on chip unit electric-conductor.
It is synchronous to carry out between chip unit and radiating bottom plate in this step, and the welding between chip unit and electric-conductor, its process tool
Body is：Solder is put into the welding region on radiating bottom plate surface, the preferred silk-screen printing of mode of solder is put into；Then, by chip
Unit is put on the solder of welding region, is fixed in the predeterminated position coated with solder of chip unit liner plate, and by spring signal pin
In predeterminated position；Finally, vacuum welding is carried out, is synchronously realized between chip unit and radiating bottom plate, and chip unit and bullet
Atomic contacts between spring signal pin.
Also include in this step：The chip unit formed in step 101 is matched, the mesh of chip unit is matched
, it is to filter out a collection of through chip unit up-to-standard after step 101, the mode of apolegamy chip unit can be X-ray
In scanning, the inspection of IGBT tracks, chip unit dynamic and static measurement or any technological means that can disclose chip unit failure
It is one or more.
Particularly point out, used solder is identical but different from the specification of solder described in step 101 in step 102.Step
Solder described in rapid 102 is lower than solder melt point described in step 101, so as to meet in engineer applied power chip to radiating bottom
The temperature gradient condition of plate.
In step 103, structure of copper bar and current sensor are set around chip unit on radiating bottom plate.Structure of copper bar
With positive end, negative end is set in the extreme portion of exchange with extreme portion, current sensor is exchanged.
The specific implementation process of this step is：Setting bottom housing, bottom housing are connected through a screw thread on radiating bottom plate
With the protrusion structure for accommodating current sensor, the uniform coating bonding agent on the bottom insulation film of structure of copper bar will
Structure of copper bar buckles into bottom housing after the rectangular opening of current sensor and protruded in structure, then is pressed together on radiating bottom plate table in the lump
Face.Structure of copper bar and the bonding location on radiating bottom plate surface are carried out by the threaded connection set on bottom housing and radiating bottom plate
Positioning.
At step 104, carry out inside chip unit, between chip unit and between structure of copper bar and chip unit
Current potential is connected so that multiple chip units constitute half-bridge circuit.Structure of copper bar includes：Three layers of copper bar being combined with each other, it is described
Positive end, negative end is not arranged on three layers of copper bar with extreme portion is exchanged.This step is built by way of lead is bound
The circuit logic of vertical power model, realize that one single chip unit is internal, between different chip units, chip unit and structure of copper bar
Between critical level intercommunication.The target of power interconnection, is to build IGBT semibridge system phase modules, the positive pole of phase module, negative pole with
Three layers of copper bar laminated type design that structure of copper bar is presented as at this three large electrodes end is exchanged, circuit of this step based on half-bridge circuit is patrolled
Volume, carried out by lead binding inside chip unit, between chip unit and chip unit is connected with the current potential of three layers of copper bar,
Make the positive pole, negative pole and exchange pole of the half-bridge circuit being made up of multiple chip units respectively with being correspondingly arranged on positive end, bearing
Extreme portion and the copper bar layer connection for exchanging extreme portion.
Lead binding lead used, can be one or more mixing in aluminum steel, copper cash, aluminium strip, copper strips.For example,
Lead can be the aluminium strip or copper strips of the wide shape of flat membrane, and either aluminum steel is combined with aluminium strip or copper cash is combined with copper strips.Lead
Do not limited with the binding mode of chip unit and structure of copper bar, any one in optional ultrasonic bond, film sintered, welding, bonding
Kind.
In step 105, dividing plate is set on structure of copper bar.Dividing plate has pierced pattern, and electric-conductor passes through pierced pattern.
Dividing plate also has flow-guiding structure, hole for injecting glue and the exhaust structure for facilitating insulating cement to inject.This step is specially：First in bottom shell
Setting middle level housing and dividing plate are connected through a screw thread on body, middle level housing and dividing plate are structure as a whole.Middle level housing and dividing plate group
Into integrative-structure on be provided with screw thread for being fixed with bottom housing and top cover, pacified by screw thread on bottom housing
Fill middle level housing and dividing plate.In embodiments of the present invention, the height of bottom housing is more than or equal to the height of structure of copper bar, middle level shell
The lower edge of body is combined into one with dividing plate, therefore, after the integrative-structure of middle level housing and dividing plate is installed on bottom housing,
Being formed by what bottom housing, radiating bottom plate and dividing plate were constituted, there is sealing, insulating cement to inject water conservancy diversion, insulating cement flowing degassing function
Cavity body structure, chip unit and spring signal pin are exposed in the cavity.Then, by the hole for injecting glue on dividing plate to by bottom
Injection insulating cement in the cavity that housing and radiating bottom plate are constituted, and the component in the cavity, such as chip unit, copper bar are covered step by step
Structure etc., in overwrite procedure, the air in cavity flows out from the exhaust structure of dividing plate, and implantation dosage is so that insulating cement is covered
Institute is leaded to be defined.Insulating cement regards the stress levels of power model, can use silicon rubber, silica gel, epoxy resin or any satisfaction
The colloid of insulation characterisitic.Finally, make insulation adhesive curing, preferably high-temperature baking rapid curing, also can normal temperature solidify for a long time.
Middle level housing has the protrusion structure that corresponding bottom housing is set, and is installed on by middle level housing on bottom housing
Afterwards, current sensor is contained in interior by the accommodation space of the protrusion structure of middle level housing and the protrusion structure composition of bottom housing.
In step 106, drive circuit board is set on dividing plate and electric-conductor and drive circuit board is connected.It is preferred that,
In this step, control board is installed on dividing plate, made as electric-conductor using spring signal pin in the embodiment of the present invention
Through the spring signal pin and the secondary pin hole communicating structure of drive circuit board composition of dividing plate pierced pattern, run through in the structure
The spring signal pin of complete dividing plate is not connected to the lower surface of control panel directly, and is through control board, and in control circuit
Plate upper surface forms contact.Then, through-contacts are welded, the vertical signal transmission road of drive circuit board and chip unit is formed
Footpath.
Finally, installation top cover is connected through a screw thread on the housing of middle level, and completes the overall plastic packaging of power model.
The power model and its manufacture method that the present invention is provided have integrated level height, power relative to traditional power model
The advantage that density is big, intelligent, encapsulated moulding is fast.
1st, integrated level is high.Its manufacture method of the power model that the present invention is provided possesses to be opened based on existing IGBT power models
The repertoire of the component of hair, will existing IGBT power models apply between the disparate modules that run into parameter characteristic it is inconsistent,
The problems such as random thoughts noise, which are concentrated, to be solved, in single one encapsulation, so as to improve the electrical property of power model, to reduce group
Part development difficulty.
2nd, be conducive to giving full play to the power grade of power chip.Its manufacture method of the power model that the present invention is provided is used
The mode that power chip is welded with radiating bottom plate, structure of copper bar is Nian Jie with radiating bottom plate, makes power chip and structure of copper bar can
Power consumption is transferred directly to by radiating bottom plate with the advantage that thermal resistance link is minimum, the cooling condition of crucial thermal source is improved, so as to fill
Divide and excavate the available power grade space of power chip.
3rd, power interconnection is efficiently quick, and power model topological sum function-variable is strong.The power model that the present invention is provided its
The circuit topology of the applicable any flexible configuration of manufacture method, is disposably realized in one single chip unit in single package structure
Power between portion, different chip unit, between chip unit and structure of copper bar is interconnected, and power interconnects used lead and tied up
Determine technology, also therefore possess the product platform to the technological leapfrogging such as broadband connection, film sintered.
4th, it is easy to implement the accurate control of signal.In power model its manufacture method that the present invention is provided, spring signal
Pin one end is directly welded on chip unit, and the direct insertion of the other end is to control board, each direct short distance pair of power chip
The command signal for taking control board is obtained, so as to improve the response speed of power chip switch motion, is evaded because of signal delay
Caused false triggering.
5th, manufacturing process is simple, and power model shaping is fast, and cost is low.The manufacture method step that the present invention is provided is followed, can
Disposal molding of the power chip to component is completed, part intermediate link and its uncertain factor is saved, so as to reduce cost, increased
Strong quality controllability.
While it is disclosed that embodiment as above, but described content is only to facilitate understanding the present invention and adopting
Embodiment, is not limited to the present invention.Any those skilled in the art to which this invention pertains, are not departing from this
On the premise of the disclosed spirit and scope of invention, any modification and change can be made in the implementing form and in details,
But the scope of patent protection of the present invention, still should be subject to the scope of the claims as defined in the appended claims.
Claims (10)
1. a kind of power model manufacture method, it is characterised in that including：
Chip unit is formed, chip unit includes：Liner plate and power chip, resistance and the temperature sensitive electricity being arranged on liner plate
Resistance；
Multiple chip units are arranged on radiating bottom plate, and connect on chip unit electric-conductor；
Structure of copper bar and current sensor are set around chip unit on radiating bottom plate, structure of copper bar has positive end, born
Extreme portion is set in the extreme portion of exchange with extreme portion, current sensor is exchanged；
Carry out inside chip unit, the current potential between chip unit and between structure of copper bar and chip unit is connected so that many
Individual chip unit constitutes half-bridge circuit；
Dividing plate is set on structure of copper bar, and dividing plate has pierced pattern, and electric-conductor passes through pierced pattern；
Drive circuit board is set on dividing plate and electric-conductor and drive circuit board is connected.
2. manufacture method according to claim 1, it is characterised in that structure of copper bar is set on radiating bottom plate described
Step includes：
Bottom housing is set on radiating bottom plate, and bottom housing has the protrusion structure for being used for accommodating current sensor；
Structure of copper bar is exchanged into extreme portion through current sensor；
Structure of copper bar is bonded on the radiating bottom plate, and current sensor is buckled into the protrusion structure of bottom housing simultaneously
It is interior.
3. manufacture method according to claim 2, it is characterised in that the structure of copper bar includes：Three be combined with each other
Layer copper bar, the positive end, negative end is not arranged on three layers of copper bar with extreme portion is exchanged, and is being carried out in chip unit
The step of current potential between portion, chip unit and between structure of copper bar and chip unit is connected includes：
Circuit logic based on half-bridge circuit, is carried out inside chip unit, between chip unit and chip by lead binding
Unit is connected with the current potential of three layers of copper bar, the positive pole for the half-bridge circuit being made up of multiple chip units, negative pole is divided with pole is exchanged
It is not connected with being correspondingly arranged on the copper bar layer of positive end, negative end and the extreme portion of exchange.
4. the manufacture method according to Claims 2 or 3, it is characterised in that include the step of dividing plate is set：
Middle level housing and dividing plate are set on bottom housing, and middle level housing and dividing plate are structure as a whole, dividing plate have flow-guiding structure,
Hole for injecting glue and exhaust structure, middle level housing have the protrusion structure that corresponding bottom housing is set, and are arranged at by middle level housing
After on bottom housing, the accommodation space of the protrusion structure of middle level housing and the protrusion structure composition of bottom housing is by current sensor
In being contained in；
Insulating cement is injected into the cavity being made up of bottom housing, radiating bottom plate and dividing plate by flow-guiding structure and hole for injecting glue, made
Air is discharged by exhaust structure in lead in the insulating cement covering cavity of injection, cavity；
Make insulation adhesive curing.
5. manufacture method according to claim 4, it is characterised in that the electric-conductor is spring signal pin, is set described
Put drive circuit board and include the step of connecting electric-conductor and drive circuit board：
Control board is installed on dividing plate, makes the spring signal pin and the drive circuit board structure through dividing plate pierced pattern
Into secondary pin hole communicating structure；
Through-contacts are welded, the vertical signal bang path of drive circuit board and chip unit is formed.
6. manufacture method according to claim 5, it is characterised in that include the step of the formation chip unit：
Solder is deployed in the welding region on liner plate；
Place power chip, resistance and thermo-sensitive resistor respectively in corresponding welding region, carry out vacuum welding.
7. manufacture method according to claim 6, it is characterised in that chip unit is arranged on radiating bottom plate described
The step of include：
It is synchronous to carry out between chip unit and radiating bottom plate, and the welding between chip unit and electric-conductor.
8. a kind of power model, it is characterised in that including：
Housing, its bottom is provided with radiating bottom plate；
Multiple chip units, it is arranged on the radiating bottom plate, and the chip unit includes：Liner plate and it is arranged on the liner plate
On power chip, resistance and thermo-sensitive resistor；
Structure of copper bar, it is arranged on the radiating bottom plate around the chip unit, and the structure of copper bar has positive end,
Negative end is connected with extreme portion, the structure of copper bar is exchanged with the chip unit so that the multiple chip unit is constituted
Half-bridge circuit；
Dividing plate, it is arranged on the structure of copper bar, and the dividing plate has pierced pattern；
Drive circuit board, it is arranged on the dividing plate, and the drive circuit board passes through the electric-conductor through the pierced pattern
It is connected with the chip unit；
Current sensor, it is set in the extreme portion of exchange.
9. power model according to claim 8, it is characterised in that the housing includes：Top cover, middle level housing and bottom
Housing, the bottom housing is fixed with the radiating bottom plate, the middle level housing up and down respectively with the top cover and bottom housing
Engagement, the middle level housing and the dividing plate are structure as a whole, and the bottom housing and middle level housing have corresponding setting
Prominent structure, the current sensor is contained in the accommodation space of the protrusion structure composition of the bottom housing and middle level housing
It is interior.
10. power model according to claim 8 or claim 9, it is characterised in that structure of copper bar includes：Three be combined with each other
Layer copper bar, is provided with dielectric film, three layers of copper bar are respectively according to half-bridge circuit logical AND institute between its upper and lower surface and every layer of copper bar
The connection current potential connection of chip unit is stated, the positive end, negative end is not arranged on three layers of copper bar with extreme portion is exchanged
On, the positive end, negative end extends the housing with extreme portion is exchanged.
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| CN201610194446.1A CN107293495B (en) | 2016-03-31 | 2016-03-31 | A kind of power module and its manufacturing method |
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| CN201610194446.1A CN107293495B (en) | 2016-03-31 | 2016-03-31 | A kind of power module and its manufacturing method |
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| CN107293495B CN107293495B (en) | 2019-07-02 |
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| CN113075980A (en) * | 2021-03-26 | 2021-07-06 | 山东英信计算机技术有限公司 | Heat dissipation and power supply module and power supply frame |
| CN113640558A (en) * | 2021-08-11 | 2021-11-12 | 山东大学 | Replaceable probe set and probe card |
| CN114115081A (en) * | 2021-12-31 | 2022-03-01 | 北京中航智科技有限公司 | High-power-density servo driver |
| WO2023092442A1 (en) * | 2021-11-26 | 2023-06-01 | 中车株洲电力机车研究所有限公司 | Integrated power semiconductor apparatus |
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| CN114115081B (en) * | 2021-12-31 | 2024-04-05 | 北京中航智科技有限公司 | High-power density servo driver |
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|---|---|
| CN107293495B (en) | 2019-07-02 |
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Effective date of registration: 20200929 Address after: 412001 Room 309, floor 3, semiconductor third line office building, Tianxin hi tech park, Shifeng District, Zhuzhou City, Hunan Province Patentee after: Zhuzhou CRRC times Semiconductor Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee before: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. |
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