CN107293495B - A kind of power module and its manufacturing method - Google Patents
A kind of power module and its manufacturing method Download PDFInfo
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- CN107293495B CN107293495B CN201610194446.1A CN201610194446A CN107293495B CN 107293495 B CN107293495 B CN 107293495B CN 201610194446 A CN201610194446 A CN 201610194446A CN 107293495 B CN107293495 B CN 107293495B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 93
- 239000010949 copper Substances 0.000 claims abstract description 91
- 229910052802 copper Inorganic materials 0.000 claims abstract description 91
- 238000005192 partition Methods 0.000 claims abstract description 60
- 238000003466 welding Methods 0.000 claims description 17
- 239000004568 cement Substances 0.000 claims description 14
- 229910000679 solder Inorganic materials 0.000 claims description 12
- 239000003292 glue Substances 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 230000008054 signal transmission Effects 0.000 claims description 2
- 238000011161 development Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 238000000465 moulding Methods 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 208000002925 dental caries Diseases 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000011897 real-time detection Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a kind of power module and its manufacturing methods, belong to technical field of electronic devices, and the traditional power module integrated level solved is low, the higher technical problem of application and development difficulty.The manufacturing method includes: to form the chip unit for being provided with power chip, grid resistance and thermo-sensitive resistor；Multiple chip units are arranged on radiating bottom plate, and connect conduct piece on chip unit；Around chip unit setting structure of copper bar and current sensor on radiating bottom plate, structure of copper bar has positive end, and negative end is set in the extreme portion of exchange with extreme portion, current sensor is exchanged；The current potential connection inside chip unit, between chip unit and between structure of copper bar and chip unit is carried out, so that multiple chip units constitute half-bridge circuit；Partition is set on structure of copper bar, and partition has pierced pattern, and conduct piece passes through the pierced pattern；Drive circuit board is set on partition and connects conduct piece and drive circuit board.
Description
Technical field
The present invention relates to technical field of electronic devices, specifically, are related to a kind of power module and its manufacturing method.
Background technique
Power module is the advanced hybrid integrated power component using IGBT as kernel, by high-speed low-power-consumption IGBT tube core and excellent
The gate drive circuit and fast protection circuit of change are constituted.IGBT tube core in power module all selects high-speed type, and
Driving circuit abuts IGBT, and driving delay is small, so power module switching speed is fast, is lost small.Power module is internally integrated
The real-time detection circuit that IGBT electric current and temperature can continuously be detected, when occur heavy overload even direct short-circuit when and temperature
When overheat, IGBT will be simultaneously emitted by fault-signal by controlledly soft switching.Power module has knot compared with simple IGBT
Structure is compact, high reliablity, it is easy to use the advantages that, especially suitable for occasions such as motor frequency conversion, electric propulsion, servo-drives.
Conventional power module, which manufactures, generally acts as a switching device use, needs optional equipment driver, control circuit
The components such as plate, sensor form (PCC) power unit.In rectification/inverter circuit, it is desirable that series-parallel using multiple power modules
Circuit is constituted, wherein each power module is equipped with the components such as special driver, radiating bottom plate, bulky, route connects
Complexity is connect, integrated level is not high, causes to control signal delay false triggering probability height, random thoughts noise is larger.And applying power mould
When block carries out transformation of electrical energy and control, the stream of the inconsistent initiation of different capacity module parameter, pressure, driving problems are transferred to
The accumulation of the Components Development link in downstream, the problems such as IGBT application, the control of route random thoughts, signal distributions formula increases Components Development
Difficulty is higher for application and development level requirement.That there is also heat-sinking capabilities is weak for conventional power module, and manufacturing process complexity etc. is asked
Topic.
Therefore, it is high to need a kind of integrated level, the low power module of application and development difficulty and its manufacturing method.
Summary of the invention
The purpose of the present invention is to provide a kind of power module and its manufacturing methods, with traditional power module collection of solution
At low, the higher technical problem of application and development difficulty of degree.
The present invention provides a kind of power module manufacturing method, this method comprises:
Chip unit is formed, chip unit includes: liner plate and the power chip, grid resistance and the temperature that are arranged on liner plate
Quick resistance；
Multiple chip units are arranged on radiating bottom plate, and connect conduct piece on chip unit；
Around chip unit setting structure of copper bar and current sensor on radiating bottom plate, structure of copper bar has positive terminal
Portion, negative end are set in the extreme portion of exchange with extreme portion, current sensor is exchanged；
The current potential connection inside chip unit, between chip unit and between structure of copper bar and chip unit is carried out, is made
It obtains multiple chip units and constitutes half-bridge circuits；
Partition is set on structure of copper bar, and partition has pierced pattern, and conduct piece passes through pierced pattern；
Drive circuit board is set on partition and connects conduct piece and drive circuit board.
Include: in the step of structure of copper bar is set on radiating bottom plate described
Bottom shell is set on radiating bottom plate, and bottom shell has the protrusion structure for accommodating current sensor；
Structure of copper bar is exchanged into extreme portion through current sensor；
Structure of copper bar is bonded on the radiating bottom plate, and current sensor is buckled into the prominent of bottom shell simultaneously and is tied
In structure.
The structure of copper bar includes: three layers of copper bar being combined with each other, the positive end, negative end with exchange it is extreme
Portion is separately positioned on three layers of copper bar, is being carried out inside chip unit, between chip unit and structure of copper bar and chip unit
Between current potential connection the step of in include:
Circuit logic based on half-bridge circuit, by lead bind carry out chip unit inside, between chip unit and
Chip unit is connect with the current potential of three layers of copper bar, is made the anode of the half-bridge circuit being made of multiple chip units, cathode and is exchanged
Pole is connect with the copper bar layer for being correspondingly arranged on positive end, negative end and the extreme portion of exchange respectively.
Include: in the step of partition is set
Middle layer shell is set on bottom shell and partition, middle layer shell and partition are structure as a whole, partition has water conservancy diversion
Structure, hole for injecting glue and exhaust structure, middle layer shell have the protrusion structure of corresponding bottom shell setting, set by middle layer shell
After being placed on bottom shell, the accommodating space of the protrusion structure composition of the protrusion structure and bottom shell of middle layer shell passes electric current
In sensor is contained in；
Insulation is injected into the cavity being made of bottom shell, radiating bottom plate and partition by flow-guiding structure and hole for injecting glue
Glue makes the insulating cement covering intracorporal lead of chamber of injection, and air is discharged by exhaust structure in cavity；
Make adhesive curing of insulating.
The conduct piece is spring signal pin, in the setting drive circuit board and connects conduct piece and drive circuit board
Include: in step
Control circuit board is installed on partition, the spring signal pin and the driving circuit across partition pierced pattern are made
Plate constitutes secondary pin hole communicating structure；
Through-contacts are welded, the vertical signal transmission path of drive circuit board and chip unit is formed.
Include: in the formation chip unit the step of
Welding region solder being deployed on liner plate；
It places power chip, grid resistance and thermo-sensitive resistor respectively in corresponding welding region, carries out vacuum welding.
Include: in described chip unit is arranged in the step on radiating bottom plate
Synchronization carries out between chip unit and radiating bottom plate and the welding between chip unit and conduct piece.
The present invention also provides a kind of power module, which includes:
Shell, bottom are provided with radiating bottom plate；
Multiple chip units are arranged on the radiating bottom plate, and the chip unit includes: liner plate and is arranged described
Power chip, grid resistance and thermo-sensitive resistor on liner plate；
Structure of copper bar is arranged on the radiating bottom plate around the chip unit, and the structure of copper bar has anode
End, negative end is connect with extreme portion, the structure of copper bar is exchanged with the chip unit, so that the multiple chip unit
Constitute half-bridge circuit；
Partition is arranged on the structure of copper bar, and the partition has pierced pattern；
Drive circuit board is arranged on the partition, and the drive circuit board is by passing through leading for the pierced pattern
Electric part is connect with the chip unit；
Current sensor is set in the extreme portion of exchange.
The shell includes: top cover, middle layer shell and bottom shell, and the bottom shell is fixed with the radiating bottom plate,
The middle layer shell is engaged with the top cover and bottom shell respectively up and down, and the middle layer shell and the partition are integrated knot
Structure, the bottom shell and middle layer shell have the protrusion structure of corresponding setting, and the current sensor is contained in the bottom
In the accommodating space of the protrusion structure composition of layer shell and middle layer shell.
Structure of copper bar includes: three layers of copper bar being combined with each other, and insulation is provided between upper and lower surface and every layer of copper bar
Film, three layers of copper bar respectively the chip unit according to half-bridge circuit logical AND connection current potential connection, the positive end, cathode
End with exchange extreme portion She Zhi be on three layers of copper bar, the positive end, negative end extends with extreme portion is exchanged
The shell.
Power module provided by the invention and its manufacturing method have that integrated level is high, power relative to traditional power module
Big, intelligent, encapsulated moulding the is fast advantage of density.
1, integrated level is high.Its manufacturing method of power module provided by the invention has to be opened based on existing IGBT power module
The repertoire of the component of hair, parameter characteristic between the disparate modules encountered in the application of existing IGBT power module is inconsistent,
The problems such as random thoughts noise, which are concentrated, to be solved, so as to improve the electrical property of power module, to reduce group in individual one encapsulation
Part development difficulty.
2, be conducive to give full play to the power grade of power chip.Its manufacturing method of power module provided by the invention uses
The mode that power chip is welded with radiating bottom plate, structure of copper bar is Nian Jie with radiating bottom plate, makes power chip and structure of copper bar can
Power consumption is transferred directly to radiating bottom plate with thermal resistance link least advantage, improves the cooling condition of crucial heat source, to fill
Divide and excavates the available power grade space of power chip.
3, power interconnection is efficiently quick, and power module topology and function-variable are strong.Power module provided by the invention its
The circuit topology of the applicable any flexible configuration of manufacturing method, is disposably realized in one single chip unit in single package structure
Power between portion, different chip units, between chip unit and structure of copper bar interconnects, and lead used by power interconnects is tied up
Determine technology, also therefore has the product platform to the technological leapfroggings such as broadband connection, film sintered.
4, it is easy to implement the accurate control of signal.In its manufacturing method of power module provided by the invention, spring signal
Needle one end is directly welded on chip unit, and the other end is directly penetrated through to control circuit board, each direct short distance pair of power chip
The command signal for taking control circuit board is obtained, to improve the response speed of power chip switch motion, is evaded because signal is delayed
Caused false triggering.
5, manufacturing process is simple, and power module molding is fast, at low cost.Manufacturing method step provided by the invention is followed, it can
Disposal molding of the power chip to component is completed, part intermediate link and its uncertain factor are saved, to reduce cost, is increased
Strong quality controllability.
Other features and advantages of the present invention will be illustrated in the following description, also, partial becomes from specification
It obtains it is clear that understand through the implementation of the invention.The objectives and other advantages of the invention can be by specification, right
Specifically noted structure is achieved and obtained in claim and attached drawing.
Detailed description of the invention
It, below will be to required in embodiment description for the clearer technical solution illustrated in the embodiment of the present invention
Attached drawing does simple introduction:
Fig. 1 is the whole the schematic diagram of the section structure of power module provided in an embodiment of the present invention；
Fig. 2 is the exploded perspective structural schematic diagram of power module provided in an embodiment of the present invention；
Fig. 3 is the structural schematic diagram of structure of copper bar provided in an embodiment of the present invention；
Fig. 4 is the flow diagram of the manufacturing method of power module provided in an embodiment of the present invention.
Description of symbols:
1, power chip 2, grid resistance 3, thermo-sensitive resistor 4, liner plate 5, radiating bottom plate 6, conduct piece 7,
Structure of copper bar 8, current sensor 9, bottom shell 10, middle layer shell 11, drive circuit board 12, top cover 13,
Lead 14, partition 15, chip unit 16, positive end 17, negative end 18, the extreme portion of exchange
Specific embodiment
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings and examples, how to apply to the present invention whereby
Technological means solves technical problem, and the realization process for reaching technical effect can fully understand and implement.It needs to illustrate
As long as not constituting conflict, each feature in each embodiment and each embodiment in the present invention can be combined with each other,
It is within the scope of the present invention to be formed by technical solution.
The embodiment of the present invention provides a kind of power module, and as depicted in figs. 1 and 2, which includes: shell, heat dissipation
Bottom plate 5, multiple chip units 15, structure of copper bar 7, partition 14, drive circuit board 11 and current sensor 8.Radiating bottom plate 5 is set
It sets in housing bottom.Chip unit 15 is arranged on radiating bottom plate 5, and chip unit 15 includes: liner plate 4 and is arranged on liner plate 4
Power chip 1, grid resistance 2 and thermo-sensitive resistor 3.Structure of copper bar 7 is arranged on radiating bottom plate 5 around chip unit 15,
Structure of copper bar 7 has positive end 16, and negative end 17 connect with chip unit 15, makes with extreme portion 18, structure of copper bar 7 is exchanged
It obtains multiple chip units 15 and constitutes half-bridge circuits.Partition 14 is arranged on structure of copper bar 7, and partition 14 has pierced pattern.Driving
Circuit board 11 is arranged on partition, and drive circuit board 11 is connect by passing through the conduct piece 6 of pierced pattern with chip unit 15.Electricity
Flow sensor 8 is set in structure of copper bar and exchanges in extreme portion 18.In embodiments of the present invention.Conduct piece uses spring signal pin.
Further, in one embodiment of the invention, shell includes: top cover 12, middle layer shell 10 and bottom shell
Body 9, bottom shell 9 are fixed on radiating bottom plate 5, and about 10 middle layer shell is engaged with top cover 12 and bottom shell 9 respectively, and in
Layer shell 10 and partition 14 are structure as a whole.Bottom shell 9 and middle layer shell 10 have the protrusion structure of corresponding setting, electric current
Sensor 8 is contained in the accommodating space of the protrusion structure composition of bottom shell 9 and middle layer shell 10.
Flow-guiding structure, hole for injecting glue and the exhaust structure for facilitating insulating cement to inject, flow-guiding structure and note are additionally provided on partition 14
Glue hole is used for for injecting insulating cement, exhaust structure into the cavity being made of partition 14, bottom shell 9 and radiating bottom plate 5
Air is discharged during injecting glue.
It is provided on the integral structure that middle layer shell 10 and partition 14 form for being consolidated with bottom shell 9 and top cover 12
Fixed screw thread is installed middle layer shell 10 and partition 14 by screw thread on bottom shell 9, is formed by bottom shell 9, radiating bottom plate
5 and partition 14 form have sealing, insulating cement injection water conservancy diversion, insulating cement flowing degassing function cavity body structure, chip unit
15 is exposed in the cavity with spring signal pin.Then, by the hole for injecting glue on partition 14 to by bottom shell 9 and radiating bottom plate
Insulating cement is injected in 5 cavitys constituted, and covers the component in the cavity step by step, such as chip unit 15, structure of copper bar 7,
In overwrite procedure, the air in cavity is flowed out from the exhaust structure of partition 14.
Further, as shown in figure 3, structure of copper bar 7 includes: three layers of copper bar being combined with each other, upper and lower surface and every
Insulating film is provided between layer copper bar, three layers of copper bar connect according to the connection current potential of half-bridge circuit logical AND chip unit 15 respectively
It connects, positive end 16, negative end 17 is separately positioned on three layers of copper bar with extreme portion 18 is exchanged, and positive end 16, cathode
Extend shell with extreme portion 18 is exchanged in end 17.The electrode sequence of three layers of copper bar and the concrete shape and size of every layer of copper bar
It can be designed according to the needs that specific power interconnects.
In one embodiment of the invention, radiating bottom plate 5 is the cooling radiating bottom plate of liquid, is arranged on radiating bottom plate 5
There is the entrance of coolant liquid.Certainly, radiating bottom plate can also be wind-cooling heat dissipating bottom plate or other radiating bottom plates, herein with no restrictions.
The embodiment of the present invention provides a kind of manufacturing method of above-mentioned power module simultaneously, as shown in figure 4, this method comprises:
Step 101 is to step 106.In a step 101, chip unit is formed, chip unit includes: liner plate and the function that is arranged on liner plate
Rate chip, grid resistance and thermo-sensitive resistor.In this step, solder is deployed in the welding region on liner plate first, then
It places power chip, grid resistance and thermo-sensitive resistor respectively in corresponding welding region, then carries out vacuum welding.By solder portion
The mode on liner plate is affixed one's name to, can be screen-printing deposition, or places blocky weld tabs directly in welding region.
In a step 102, multiple chip units are arranged on radiating bottom plate, and connect conduct piece on chip unit.
In this step, between synchronous progress chip unit and radiating bottom plate and the welding between chip unit and conduct piece, process have
Body are as follows: solder is put into the welding region on radiating bottom plate surface, is put into the preferred silk-screen printing of mode of solder；Then, by chip
Unit is put on the solder of welding region, is fixed in the predeterminated position coated with solder of chip unit liner plate, and by spring signal pin
In predeterminated position；It is synchronous to realize between chip unit and radiating bottom plate and chip unit and bullet finally, carry out vacuum welding
Atomic contacts between spring signal pin.
In this step further include: the chip unit formed in step 101 is matched, the mesh of chip unit is matched
, it is to filter out a batch chip unit up-to-standard after step 101, the mode for matching chip unit can be X-ray
Scanning, the track IGBT check, in chip unit dynamic and static measurement or any technological means that can disclose chip unit failure
It is one or more.
It particularly points out, used solder is identical but different from the specification of solder described in step 101 in step 102.Step
Solder described in rapid 102 is lower than solder melt point described in step 101, to meet in engineer application power chip to heat dissipation bottom
The temperature gradient condition of plate.
In step 103, around chip unit setting structure of copper bar and current sensor on radiating bottom plate.Structure of copper bar
With positive end, negative end is set in the extreme portion of exchange with extreme portion, current sensor is exchanged.
The specific implementation process of this step are as follows: setting bottom shell, bottom shell are connected through a screw thread on radiating bottom plate
With the protrusion structure for accommodating current sensor, bonding agent is uniformly coated on the bottom insulation film of structure of copper bar, it will
Structure of copper bar is buckled into after the rectangular opening of current sensor in the prominent structure of bottom shell, then is pressed together on radiating bottom plate table together
Face.Structure of copper bar and the bonding location on radiating bottom plate surface are carried out by the threaded connection being arranged on bottom shell and radiating bottom plate
Positioning.
At step 104, it carries out inside chip unit, between chip unit and between structure of copper bar and chip unit
Current potential connection, so that multiple chip units constitute half-bridge circuit.Structure of copper bar includes: three layers of copper bar being combined with each other, described
Positive end, negative end with exchange extreme portion She Zhi be on three layers of copper bar.This step is built in such a way that lead is bound
The circuit logic of vertical power module, realize one single chip unit is internal, between different chip units, chip unit and structure of copper bar
Between critical level intercommunication.The target of power interconnection, is to build IGBT semibridge system phase module, the anode of phase module, cathode with
Three layers of copper bar laminated type design that structure of copper bar is presented as at this three large electrodes end is exchanged, this step is patrolled based on the circuit of half-bridge circuit
Volume, it is bound and is carried out inside chip unit, between chip unit and chip unit is connect with the current potential of three layers of copper bar by lead,
Make the anode of the half-bridge circuit being made of multiple chip units, cathode and exchange pole respectively be correspondingly arranged on positive end, negative
Extreme portion is connected with the copper bar layer for exchanging extreme portion.
Lead binding lead used, can be one of aluminum steel, copper wire, aluminium strip, copper strips or a variety of mixing.For example,
Perhaps aluminum steel combines the aluminium strip or copper strips that lead can be the wide shape of flat membrane with aluminium strip or copper wire is combined with copper strips.Lead
It is unlimited with the binding mode of chip unit and structure of copper bar, optional ultrasonic bond, it is film sintered, welding, bonding in any one
Kind.
In step 105, partition is set on structure of copper bar.Partition has pierced pattern, and conduct piece passes through pierced pattern.
Partition also has flow-guiding structure, hole for injecting glue and the exhaust structure for facilitating insulating cement to inject.This step specifically: first in bottom shell
It is connected through a screw thread setting middle layer shell on body and partition, middle layer shell and partition are structure as a whole.Middle layer shell and partition group
At integral structure on be provided with screw thread for being fixed with bottom shell and top cover, pacified on bottom shell by screw thread
Fill middle layer shell and partition.In embodiments of the present invention, the height of bottom shell is more than or equal to the height of structure of copper bar, middle layer shell
The lower edge of body is combined into one with partition, therefore, after the integral structure of middle layer shell and partition is installed on bottom shell,
Being formed by what bottom shell, radiating bottom plate and partition formed there is sealing, insulating cement injection water conservancy diversion, insulating cement to flow degassing function
Cavity body structure, chip unit and spring signal pin it is exposed in the cavity.Then, by the hole for injecting glue on partition to by bottom
Insulating cement is injected in the cavity that shell and radiating bottom plate are constituted, and covers the component in the cavity step by step, such as chip unit, copper bar
Structure etc., in overwrite procedure, the air in cavity is flowed out from the exhaust structure of partition, and implantation dosage is so that insulating cement covers
Subject to all leads.Insulating cement regards the stress levels of power module, and silicon rubber, silica gel, epoxy resin or any satisfaction can be used
The colloid of insulation characterisitic.Finally, make insulate adhesive curing, preferably high-temperature baking rapid curing, it also can room temperature solidification for a long time.
Middle layer shell has the protrusion structure of corresponding bottom shell setting, is installed on bottom shell by middle layer shell
Afterwards, current sensor is contained in interior by the accommodating space of the protrusion structure composition of the protrusion structure and bottom shell of middle layer shell.
In step 106, drive circuit board is set on partition and connects conduct piece and drive circuit board.Preferably, exist
In this step, control circuit board is installed on partition, is made as conduct piece using spring signal pin in the embodiment of the present invention
Secondary pin hole communicating structure is constituted across the spring signal pin of partition pierced pattern and the drive circuit board, is run through in the structure
The spring signal pin of complete partition is not connected to the lower surface of control panel directly, and is through control circuit board, and in control circuit
Plate upper surface forms contact.Then, through-contacts are welded, the vertical signal for forming drive circuit board and chip unit transmits road
Diameter.
Finally, being connected through a screw thread installation top cover on shell in middle level, and complete power module entirety plastic packaging.
Power module provided by the invention and its manufacturing method have that integrated level is high, power relative to traditional power module
Big, intelligent, encapsulated moulding the is fast advantage of density.
1, integrated level is high.Its manufacturing method of power module provided by the invention has to be opened based on existing IGBT power module
The repertoire of the component of hair, parameter characteristic between the disparate modules encountered in the application of existing IGBT power module is inconsistent,
The problems such as random thoughts noise, which are concentrated, to be solved, so as to improve the electrical property of power module, to reduce group in individual one encapsulation
Part development difficulty.
2, be conducive to give full play to the power grade of power chip.Its manufacturing method of power module provided by the invention uses
The mode that power chip is welded with radiating bottom plate, structure of copper bar is Nian Jie with radiating bottom plate, makes power chip and structure of copper bar can
Power consumption is transferred directly to radiating bottom plate with thermal resistance link least advantage, improves the cooling condition of crucial heat source, to fill
Divide and excavates the available power grade space of power chip.
3, power interconnection is efficiently quick, and power module topology and function-variable are strong.Power module provided by the invention its
The circuit topology of the applicable any flexible configuration of manufacturing method, is disposably realized in one single chip unit in single package structure
Power between portion, different chip units, between chip unit and structure of copper bar interconnects, and lead used by power interconnects is tied up
Determine technology, also therefore has the product platform to the technological leapfroggings such as broadband connection, film sintered.
4, it is easy to implement the accurate control of signal.In its manufacturing method of power module provided by the invention, spring signal
Needle one end is directly welded on chip unit, and the other end is directly penetrated through to control circuit board, each direct short distance pair of power chip
The command signal for taking control circuit board is obtained, to improve the response speed of power chip switch motion, is evaded because signal is delayed
Caused false triggering.
5, manufacturing process is simple, and power module molding is fast, at low cost.Manufacturing method step provided by the invention is followed, it can
Disposal molding of the power chip to component is completed, part intermediate link and its uncertain factor are saved, to reduce cost, is increased
Strong quality controllability.
While it is disclosed that embodiment content as above but described only to facilitate understanding the present invention and adopting
Embodiment is not intended to limit the invention.Any those skilled in the art to which this invention pertains are not departing from this
Under the premise of the disclosed spirit and scope of invention, any modification and change can be made in the implementing form and in details,
But scope of patent protection of the invention, still should be subject to the scope of the claims as defined in the appended claims.
Claims (10)
1. a kind of power module manufacturing method characterized by comprising
Chip unit is formed, chip unit includes: liner plate and the power chip, grid resistance and the temperature sensitive electricity that are arranged on liner plate
Resistance；
Multiple chip units are arranged on radiating bottom plate, and connect conduct piece on chip unit；
Around chip unit setting structure of copper bar and current sensor on radiating bottom plate, structure of copper bar has positive end, bears
Extreme portion is set in the extreme portion of exchange with extreme portion, current sensor is exchanged；
The current potential connection inside chip unit, between chip unit and between structure of copper bar and chip unit is carried out, so that more
A chip unit constitutes half-bridge circuit；
Partition is set on structure of copper bar, and partition has pierced pattern, and conduct piece passes through pierced pattern；
Drive circuit board is set on partition and connects conduct piece and drive circuit board.
2. the manufacturing method according to claim 1, which is characterized in that structure of copper bar is arranged on radiating bottom plate described
Include: in step
Bottom shell is set on radiating bottom plate, and bottom shell has the protrusion structure for accommodating current sensor；
Structure of copper bar is exchanged into extreme portion through current sensor；
Structure of copper bar is bonded on the radiating bottom plate, and current sensor is buckled into the protrusion structure of bottom shell simultaneously
It is interior.
3. manufacturing method according to claim 2, which is characterized in that the structure of copper bar includes: three to be combined with each other
Layer copper bar, the positive end, negative end and exchange extreme portion She Zhi on three layers of copper bar, progress chip unit in
Include: in the step of current potential between portion, chip unit and between structure of copper bar and chip unit connects
Circuit logic based on half-bridge circuit is bound by lead and is carried out inside chip unit, between chip unit and chip
Unit is connect with the current potential of three layers of copper bar, divides the anode for the half-bridge circuit being made of multiple chip units, cathode with pole is exchanged
It is not connect with the copper bar layer for being correspondingly arranged on positive end, negative end and the extreme portion of exchange.
4. manufacturing method according to claim 2 or 3, which is characterized in that include: in the step of partition is arranged
Middle layer shell and partition, middle layer shell and partition are arranged on bottom shell to be structure as a whole, partition have flow-guiding structure,
Hole for injecting glue and exhaust structure, middle layer shell have the protrusion structure of corresponding bottom shell setting, are set to by middle layer shell
After on bottom shell, the accommodating space of the protrusion structure composition of the protrusion structure and bottom shell of middle layer shell is by current sensor
In being contained in；
Insulating cement is injected into the cavity being made of bottom shell, radiating bottom plate and partition by flow-guiding structure and hole for injecting glue, is made
The insulating cement of injection covers the intracorporal lead of chamber, and air is discharged by exhaust structure in cavity；
Make adhesive curing of insulating.
5. manufacturing method according to claim 4, which is characterized in that the conduct piece is spring signal pin, is set described
Include: in the step of setting drive circuit board and connecting conduct piece and drive circuit board
Control circuit board is installed on partition, the spring signal pin and the drive circuit board structure across partition pierced pattern are made
At secondary pin hole communicating structure；
Through-contacts are welded, the vertical signal transmission path of drive circuit board and chip unit is formed.
6. manufacturing method according to claim 5, which is characterized in that include: in the formation chip unit the step of
Welding region solder being deployed on liner plate；
It places power chip, grid resistance and thermo-sensitive resistor respectively in corresponding welding region, carries out vacuum welding.
7. manufacturing method according to claim 6, which is characterized in that multiple chip units are arranged at heat dissipation bottom described
Include: in step on plate
Synchronization carries out between chip unit and radiating bottom plate and the welding between chip unit and conduct piece.
8. a kind of power module characterized by comprising
Shell, bottom are provided with radiating bottom plate；
Multiple chip units are arranged on the radiating bottom plate, and the chip unit includes: liner plate and is arranged in the liner plate
On power chip, grid resistance and thermo-sensitive resistor；
Structure of copper bar is arranged on the radiating bottom plate around the chip unit, and the structure of copper bar has positive end,
Negative end is connect with extreme portion, the structure of copper bar is exchanged with the chip unit, so that the multiple chip unit is constituted
Half-bridge circuit；
Partition is arranged on the structure of copper bar, and the partition has pierced pattern；
Drive circuit board is arranged on the partition, and the drive circuit board passes through the conduct piece across the pierced pattern
It is connect with the chip unit；
Current sensor is set in the extreme portion of exchange.
9. power module according to claim 8, which is characterized in that the shell includes: top cover, middle layer shell and bottom
Shell, the bottom shell are fixed with the radiating bottom plate, the middle layer shell up and down respectively with the top cover and bottom shell
Engagement, the middle layer shell and the partition are structure as a whole, and the bottom shell and middle layer shell have corresponding setting
Prominent structure, the current sensor are contained in the accommodating space of the protrusion structure composition of the bottom shell and middle layer shell
It is interior.
10. power module according to claim 8 or claim 9, which is characterized in that structure of copper bar includes: three to be combined with each other
Layer copper bar, is provided with insulating film, three layers of copper bar are respectively according to half-bridge circuit logical AND institute between upper and lower surface and every layer of copper bar
State chip unit connection current potential connection, the positive end, negative end with exchange extreme portion She Zhi be in three layers of copper bar
On, the positive end, negative end extends the shell with extreme portion is exchanged.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109743856A (en) * | 2018-12-29 | 2019-05-10 | 积高电子(无锡)有限公司 | A kind of packaging technology of sensor |
| CN113075980B (en) * | 2021-03-26 | 2023-03-10 | 山东英信计算机技术有限公司 | Heat dissipation and power supply module and power supply frame |
| CN113640558B (en) * | 2021-08-11 | 2022-06-14 | 山东大学 | Replaceable probe set and probe card |
| WO2023092442A1 (en) * | 2021-11-26 | 2023-06-01 | 中车株洲电力机车研究所有限公司 | Integrated power semiconductor apparatus |
| CN114115081B (en) * | 2021-12-31 | 2024-04-05 | 北京中航智科技有限公司 | High-power density servo driver |
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| CN107293495A (en) | 2017-10-24 |
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