CN113707643A - High-integration high-reliability IGBT power module and manufacturing method thereof - Google Patents
High-integration high-reliability IGBT power module and manufacturing method thereof Download PDFInfo
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- CN113707643A CN113707643A CN202110999766.5A CN202110999766A CN113707643A CN 113707643 A CN113707643 A CN 113707643A CN 202110999766 A CN202110999766 A CN 202110999766A CN 113707643 A CN113707643 A CN 113707643A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
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Abstract
A high-integration high-reliability IGBT power module and a manufacturing method thereof comprise the following steps: the H-bridge circuit structure comprises a metal bottom plate, metal bottom plate fixing holes, a multilayer wiring ceramic left half-bridge substrate, a multilayer wiring ceramic switching substrate, a multilayer wiring ceramic right half-bridge substrate, module pins, bonding wires, 4 IGBT chips and 4 diode chips; the technology of metal base plate, multilayer ceramic substrate, bare chip bonding and metal fixing is comprehensively adopted, the left half-bridge substrate of multilayer wiring ceramic, the switching substrate of multilayer wiring ceramic and the right half-bridge substrate of multilayer wiring ceramic are pasted and welded on the metal base plate, and 4 IGBT chips and 4 diode chips are pasted and welded on the corresponding substrates according to the design layout. The problems of poor high-voltage resistance, low assembly density, complex heat dissipation measures and low reliability of the existing IGBT module are solved. The method is widely applied to the packaging process of the semiconductor power device.
Description
Technical Field
The invention belongs to the technical field of semiconductor power modules, and particularly relates to a high-integration high-reliability IGBT power module structure and a manufacturing method thereof.
Background
An Insulated Gate Bipolar Transistor (IGBT) is the most mainstream and most core power semiconductor device at present, is a composite fully-controlled voltage-driven power semiconductor device combining a metal-oxide-semiconductor field effect Transistor (MOSFET) and a Bipolar Junction Transistor (BJT), integrates the advantages of the MOSFET and the BJT, and is the most excellent power semiconductor power electronic device at present. Because the saturation breakover voltage of the IGBT is reduced, the current-carrying density is high, the driving power is very low, the switching speed is high, and the IGBT is widely applied to the fields of electric power systems, railway systems, traffic control, frequency converters, power conversion, industrial motors, UPS uninterrupted power supplies, wind power and solar equipment, automobile electronics and the like, and is used for automatic control. Especially, the IGBT with the voltage of 600V or more can greatly improve the performance and the reliability of the power electronic device and the system. With the rapid development of various equipment systems, an IGBT module of 1000V or more, particularly 1200V, is urgently needed in the industry and the market. However, due to the limitations of the process, chip structure and packaging structure in the prior art, the IGBT module is mainly fabricated on a PCB board of a discrete device, resulting in poor high-voltage resistance, low packaging density, long interconnection lines, long heat transfer path, large thermal resistance, complex heat dissipation measures, large product volume, low reliability, and the like, and the IGBT module has poor production repeatability, poor consistency, large quality fluctuation, and is far from meeting the requirements of technical development and market demand.
Therefore, the invention is especially provided.
Disclosure of Invention
The invention aims to solve the problems of poor high-voltage resistance, low assembly density, complex heat dissipation measures, low reliability and the like of the traditional IGBT module.
The electrical schematic diagram of the IGBT module of the invention is shown in fig. 1, the module has 4 identical IGBT chips Q1, Q2, Q3, Q4, and each IGBT chip is connected in parallel with an identical fast recovery diode D1, D2, D3, D4 from E pole to C pole. The working principle of the circuit is as follows: 1. the ends 3, 9 and 11 are the gates of the IGBTs, the gates are the control ends of the IGBTs, and the corresponding IGBT chips are started and normally run by applying voltages to the ends 1, 3, 9 and 11. In the module, Q1 and Q3 form a group, and Q2 and Q4 form a group. By corresponding gate control, Q1 and Q3 are simultaneously turned on, 13 and 21 are input ports, a current of Q1 is output from the port 19, and a current of Q3 is output from the port 15. Similarly, when Q2 and Q4 are in operation, port 19 and port 15 become input terminals, and current is output from ports 14 and 20. Ports 2, 4, 10, 12 are detection ports that provide detection signals for each module. The reverse fast recovery diodes connected in parallel with each IGBT are used for preventing the IGBT chips from being broken down by reverse current generated when the corresponding IGBT chips are turned off as inductive loads. This module actually implements an H-bridge circuit, with the freewheeling diode (FRD or FWD for short) being the fast recovery diode. Q1, Q2, D1 and D2 form a left half-bridge circuit, Q3, Q4, D3 and D4 form a right half-bridge circuit, and the left half-bridge circuit, the right half-bridge circuit and the right half-bridge circuit are started as required when the electric vehicle works.
The invention provides an H-bridge IGBT module, and a schematic structural diagram is shown in FIG. 2.
The method comprises the following steps: the chip comprises a metal base plate 1, metal base plate fixing holes 2, a multilayer wiring ceramic left half-bridge substrate 3, a multilayer wiring ceramic switching substrate 4, a multilayer wiring ceramic right half-bridge substrate 5, module pins 6, a bonding wire 7, a Q1 chip 8, a D1 chip 9, a D2 chip 10, a Q2 chip 11, a Q3 chip 12, a D3 chip 13, a D4 chip 14 and a Q4 chip 15.
The Q1 chip, the Q2 chip, the Q3 chip and the Q4 chip are IGBT chips; the IGBT chip is a 1200V chip with withstand voltage.
The D1 chip, the D2 chip, the D3 chip and the D4 chip are diode chips; the diode chip is a fast recovery diode chip.
The metal base plate 1 has a metal base plate fixing hole 2.
And the multilayer wiring ceramic left half-bridge substrate 3, the multilayer wiring ceramic switching substrate 4 and the multilayer wiring ceramic right half-bridge substrate 5 are pasted and welded on the metal base plate 1, and the multilayer wiring ceramic switching substrate 4 is positioned between the multilayer wiring ceramic left half-bridge substrate 3 and the multilayer wiring ceramic right half-bridge substrate 5.
And the Q1 chip 8, the D1 chip 9, the D2 chip 10 and the Q2 chip 11 are mounted and welded on the left half-bridge substrate 3 of the multilayer wiring ceramic according to the design layout, and the Q3 chip 8, the D3 chip 9, the D4 chip 10 and the Q4 chip 11 are mounted and welded on the right half-bridge substrate 4 of the multilayer wiring ceramic according to the design layout.
And adopting a bonding wire 7 to carry out wire bonding between corresponding connecting points according to the connection design.
The number of the bonding wires for the connection bonding between the corresponding connection points is determined by the magnitude of the flowing current, and is at least 1 bonding wire.
The metal bottom plate fixing holes 2 are a plurality of at least 1 in the left and right directions and are used for assembling and fixing the metal bottom plate 1 and the module shell through metal slurry welding or rivets.
The invention provides a manufacturing method of an H-bridge IGBT module, which comprises the following steps:
(1) preparing a metal base plate 1, a metal base plate fixing hole 2, a multilayer wiring ceramic left half-bridge substrate 3, a multilayer wiring ceramic switching substrate 4 and a multilayer wiring ceramic right half-bridge substrate 5 according to a conventional process technology;
(2) printing welding areas of a multilayer wiring ceramic left half-bridge substrate 3, a multilayer wiring ceramic switching substrate 4 and a multilayer wiring ceramic right half-bridge substrate 5 on a metal base plate 1 by adopting a thick film screen printing process;
(3) respectively manufacturing chip welding areas on the multilayer wiring ceramic left half-bridge substrate 3 and the multilayer wiring ceramic right half-bridge substrate 5 by adopting a thin film coating process or a thick film screen printing process;
(4) respectively attaching the Q1 chip 8, the D1 chip 9, the D2 chip 10, the Q2 chip 11, the Q3 chip 12, the D3 chip 13, the D4 chip 14 and the Q4 chip 15 to corresponding substrate welding areas;
(5) respectively attaching the left half-bridge substrate 3, the switching substrate 4 and the right half-bridge substrate 5 to corresponding welding areas of the metal base plate 1; the sequence of the step (5) and the step (4) can be interchanged according to the welding temperature, and a high-temperature process is carried out first and then a low-temperature process is carried out, so that the process is compatible;
(6) carrying out lead bonding by adopting a bonding wire according to the design requirement of a connecting line;
(7) and performing shell packaging according to a shell packaging process.
The technical effects are as follows:
the IGBT module provided by the invention integrates and adopts the process technologies of a metal bottom plate, a multilayer ceramic substrate, bare chip bonding, metal fixing and the like, so that the IGBT module has the characteristics of high pressure resistance of over 1200V, high assembly density, short interconnection line, short heat transfer path, low thermal resistance, no additional internal heat dissipation measure, miniaturized product volume, high reliability and the like, has good production repeatability, process consistency and quality consistency, and can fully meet the requirements of technical development and market requirements.
The technical scheme of the invention is widely applied to the packaging process of the semiconductor power device.
Drawings
FIG. 1 is an electrical schematic structural diagram of an IGBT module
FIG. 2 is a schematic diagram of an IGBT module assembly structure
The number in fig. 1 is the circuit connection port number, and does not belong to the part number.
In fig. 2: the chip comprises a metal base plate 1, a metal base plate fixing hole 2, a multilayer wiring ceramic left half-bridge substrate 3, a multilayer wiring ceramic switching substrate 4, a multilayer wiring ceramic right half-bridge substrate 5, a module pin 6, a bonding wire 7, a Q1 chip 8, a D1 chip 9, a D2 chip 10, a Q2 chip 11, a Q3 chip 12, a D3 chip 13, a D4 chip 14 and a Q4 chip 15.
Detailed Description
As shown in fig. 2, the specific implementation is as follows:
the bonding wire is a 500-micron diameter silicon-aluminum wire.
The bonding wires comprise 1 grid electrode and 4-10 collector and emitter electrodes.
The metal bottom plate is rectangular, four corners of the metal bottom plate are provided with metal bottom plate fixing holes, and the metal bottom plate and the module shell are fixed together through rivets.
The module shell is made of PBT engineering plastic, and the plastic has high temperature resistance and small mass.
The wire mesh is a metal wire mesh.
The substrate welding or the chip welding is reflow welding or alloy welding.
The specific manufacturing process comprises the following steps:
(1) the method comprises the following steps of screen printing, namely printing solder paste on the surface of a multilayer ceramic substrate according to a set pattern to prepare for surface mounting in an early stage, wherein a silk screen is an iron wire net;
(2) the patch is used for pasting the four groups of IGBT and FRD chips on the set multilayer ceramic substrate pasting position;
(3) reflow soldering, which is divided into secondary soldering, wherein the multilayer ceramic substrate and the IGBT/FRD chip are sintered together for the first time, and then the multilayer ceramic substrate and the metal baseplate are sintered together, and the secondary sintering can effectively reduce the probability of the module pollution caused by the sputtering of soldering paste at high temperature;
(4) sintering and cleaning, namely ultrasonically cleaning for 10min by using a soldering flux cleaning solution (glycol ether solution) (properly timing when the surface is yellowed or tin beads are sputtered seriously);
(5) the wire bonding is ultrasonic bonding, and bonding wires are bonded on the bonding area of the business person by ultrasonic waves;
(6) the shell is subjected to plastic packaging, the shell is subjected to glue dispensing and a bottom plate is additionally arranged, the effect of bonding the bottom plate is achieved, and the glue dispensing is sealant;
(7) the rivet is pressed in, and the rivet is pressed in four corners of the module, so that the colloid is prevented from flowing out when the glue is filled in the body;
(8) and (3) filling and curing the glue into the shell, wherein the glue is a mixture of AB type silica gel, the proportion of the AB type silica gel is 1:4-4:1, the solidification speeds of different proportions are different, and the glue filling is used for preventing the voltage of the glue from breaking down air to cause a sparking phenomenon and damaging the chip.
Finally, it should be noted that: the above examples are merely examples for clarity of illustration, and the present invention includes but is not limited to the above examples, which are not necessarily exhaustive of all embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. Embodiments that meet the requirements of the present invention are within the scope of the present invention.
Claims (10)
1. A highly integrated and highly reliable IGBT power module, comprising: the chip comprises a metal base plate, a metal base plate fixing hole, a multilayer wiring ceramic left half-bridge substrate, a multilayer wiring ceramic switching substrate, a multilayer wiring ceramic right half-bridge substrate, a module pin, a bonding wire, a Q1 chip, a D1 chip, a D2 chip, a Q2 chip, a Q3 chip, a D3 chip, a D4 chip and a Q4 chip;
the Q1 chip, the Q2 chip, the Q3 chip and the Q4 chip are IGBT chips;
the D1 chip, the D2 chip, the D3 chip and the D4 chip are diode chips;
the metal bottom plate is provided with a metal bottom plate fixing hole;
the multilayer wiring ceramic left half-bridge substrate, the multilayer wiring ceramic switching substrate and the multilayer wiring ceramic right half-bridge substrate are pasted and welded on the metal bottom plate, and the multilayer wiring ceramic switching substrate is positioned between the multilayer wiring ceramic left half-bridge substrate and the multilayer wiring ceramic right half-bridge substrate;
mounting and welding the Q1 chip, the D1 chip, the D2 chip and the Q2 chip on a left bridge substrate of multilayer wiring ceramic according to a design layout, and mounting and welding the Q3 chip, the D3 chip, the D4 chip and the Q4 chip on a right bridge substrate of multilayer wiring ceramic according to the design layout;
adopting a bonding wire to carry out the connection bonding between corresponding connection points according to the connection design;
the number of bonding wires for connecting and bonding the connecting lines between the corresponding connecting points is set by the magnitude of the flowing current, and is at least 1 bonding wire;
the number of the metal bottom plate fixing holes is at least 1 in the left and right directions.
2. The high-integration high-reliability IGBT power module according to claim 1, characterized in that the IGBT chips are voltage-withstanding 1200V chips.
3. The high integration high reliability IGBT power module of claim 1, wherein the diode chip is a fast recovery diode chip.
4. The high integration high reliability IGBT power module of claim 1, wherein the bond wires are 500 micron diameter silicon aluminum wires.
5. The high-integration high-reliability IGBT power module according to claim 1, wherein the bonding wires have the number of 1 grid, 4-10 collector and emitter.
6. The IGBT power module as claimed in claim 1, wherein the metal base plate is rectangular, and metal base plate fixing holes are formed at four corners of the metal base plate.
7. The manufacturing method of the high-integration high-reliability IGBT power module according to claim 1, characterized by comprising the following steps:
(1) preparing a metal base plate, a metal base plate fixing hole, a multilayer wiring ceramic left half-bridge substrate, a multilayer wiring ceramic switching substrate and a multilayer wiring ceramic right half-bridge substrate according to a conventional process technology;
(2) printing welding areas of a multilayer wiring ceramic left half-bridge substrate, a multilayer wiring ceramic switching substrate and a multilayer wiring ceramic right half-bridge substrate on a metal base plate by adopting a thick film screen printing process;
(3) respectively manufacturing chip welding areas on the multilayer wiring ceramic left half-bridge substrate and the multilayer wiring ceramic right half-bridge substrate by adopting a thin film coating process or a thick film screen printing process;
(4) respectively attaching a Q1 chip, a D1 chip, a D2 chip, a Q2 chip, a Q3 chip, a D3 chip, a D4 chip and a Q4 chip to corresponding substrate welding areas;
(5) respectively attaching the left half-bridge substrate, the switching substrate and the right half-bridge substrate to corresponding welding areas of the metal base plate; the sequence of the step (5) and the step (4) can be interchanged according to the welding temperature, and a high-temperature process is carried out first and then a low-temperature process is carried out, so that the process is compatible;
(6) carrying out lead bonding by adopting a bonding wire according to the design requirement of a connecting line;
(7) and performing shell packaging according to a shell packaging process.
8. The manufacturing method of the high-integration high-reliability IGBT power module as claimed in claim 7, wherein the substrate soldering or die soldering is reflow soldering or alloy soldering.
9. The manufacturing method of the high-integration high-reliability IGBT power module according to claim 7, characterized by comprising the following specific steps:
(1) screen printing: printing solder paste on the surface of the multilayer ceramic substrate according to a set pattern, and preparing for surface mounting in an early stage, wherein the silk screen is a wire mesh;
(2) surface mounting: sticking the four groups of IGBT and FRD chips on the set multilayer ceramic substrate sticking position;
(3) and (3) reflow soldering: the method is divided into two times of welding, the multilayer ceramic substrate and the IGBT/FRD chip are sintered together for the first time, then the multilayer ceramic substrate and the metal bottom plate are sintered together, and the two times of sintering can effectively reduce the probability that the soldering paste is sputtered at high temperature to pollute the module;
(4) sintering and cleaning: ultrasonically cleaning for 10min by using a soldering flux cleaning solution;
(5) and (3) wire bonding: for ultrasonic bonding, bonding wires and bonding wires on a bonding area of a business person by ultrasonic waves;
(6) plastic packaging of the shell: dispensing the shell and additionally installing a bottom plate to play a role in adhering the bottom plate, wherein the used dispensing is sealant;
(7) rivet pressing: the rivets are pressed into four corners of the module to prevent the colloid from flowing out when the colloid is filled in the body;
(8) and (3) glue pouring and curing of the shell: the glue filling is formed by mixing AB type silica gel in a ratio of 1:4-4: 1.
10. The method for manufacturing the high-integration high-reliability IGBT power module as claimed in claim 9, wherein the housing is PBT engineering plastic, and the flux cleaning solution is glycol ether solution.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117059588A (en) * | 2023-08-07 | 2023-11-14 | 上海林众电子科技有限公司 | Power module packaging platform and power module |
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