CN107275421A - 一种量子点光电探测器及其制备方法 - Google Patents
一种量子点光电探测器及其制备方法 Download PDFInfo
- Publication number
- CN107275421A CN107275421A CN201710420652.4A CN201710420652A CN107275421A CN 107275421 A CN107275421 A CN 107275421A CN 201710420652 A CN201710420652 A CN 201710420652A CN 107275421 A CN107275421 A CN 107275421A
- Authority
- CN
- China
- Prior art keywords
- quantum dot
- preparation
- photodetector
- metal
- micro structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002096 quantum dot Substances 0.000 title claims abstract description 46
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 11
- 238000004528 spin coating Methods 0.000 claims abstract description 10
- 239000011521 glass Substances 0.000 claims abstract description 9
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims abstract description 6
- 239000004926 polymethyl methacrylate Substances 0.000 claims abstract description 6
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 6
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 6
- 239000000084 colloidal system Substances 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 6
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 5
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 4
- 230000002708 enhancing effect Effects 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 238000007704 wet chemistry method Methods 0.000 claims description 2
- 238000013461 design Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000001914 filtration Methods 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 15
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 229910052793 cadmium Inorganic materials 0.000 description 5
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 5
- 230000005622 photoelectricity Effects 0.000 description 5
- 239000006228 supernatant Substances 0.000 description 5
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 4
- 239000005864 Sulphur Substances 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 229910052711 selenium Inorganic materials 0.000 description 4
- 239000011669 selenium Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 3
- 229940116367 cadmium sulfide Drugs 0.000 description 3
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 3
- 238000001311 chemical methods and process Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 2
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 2
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000005642 Oleic acid Substances 0.000 description 2
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 2
- LHQLJMJLROMYRN-UHFFFAOYSA-L cadmium acetate Chemical compound [Cd+2].CC([O-])=O.CC([O-])=O LHQLJMJLROMYRN-UHFFFAOYSA-L 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 2
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 241000795633 Olea <sea slug> Species 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229940046892 lead acetate Drugs 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- SWMBQMGPRYJSCI-UHFFFAOYSA-N octylphosphane Chemical class CCCCCCCCP SWMBQMGPRYJSCI-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005375 photometry Methods 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- -1 silicane sulfanes Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052979 sodium sulfide Inorganic materials 0.000 description 1
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
本发明公开了一种量子点光电探测器及其制备方法，包括如下步骤：在ITO玻璃衬底上旋涂PMMA光刻胶；光刻胶曝光及微结构图形定义；蒸镀一定厚度的金属薄膜；光刻胶剥离及金属微结构的生成；将制备好的量子点旋涂或喷涂在上述衬底上形成薄膜；继续蒸镀一定厚度的金属形成背底电极，完成器件制备。本发明利用金属微结构的窄带滤波和光场增强功能，对量子点光电响应进行波长调制和增敏，利用量子点薄膜光电效应，使得ITO与背底电极之间的电流发生显著变化。本发明通过选取合适的金属和量子点材料体系，调节金属微结构阵列的结构设计与量子点尺寸，实现高灵敏、可调谐的窄带光电探测器。
Description
技术领域
本发明属于光电探测技术领域，涉及一种量子点光电探测器及其制备方法。
背景技术
半导体光电导式光电探测器的原理是辐射引起被照射的半导体材料电导率发生改变，在军事和国民经济的众多领域发挥着重要作用。在可见光或近红外波段主要用于射线测量和探测、工业自动控制、光度计量、光纤通信等；在红外波段主要用于导弹制导、红外热成像、红外遥感等方面。量子点由于具有三个维度的限域效应，电子能量在三个维度都具有量子化特性，因此具有与尺寸相关的能量带隙，吸收波长可调谐。胶体量子点采用胶体化学法制备，与普通纳米材料相比，具有尺寸可控且均匀性好、活性高、物化特性可控、易于表面修饰、可室温成膜等特点，作为光电探测器的新型材料倍受关注。
传统光电探测器对于能量高于能量带隙的光波都具有响应，需要增加光栅、滤光片等光学器件来增加探测器对特定波长的光的选择性，导致器件体积增大、难以集成且成本高昂。
发明内容
针对现有技术的以上缺陷或改进需求，本发明提供一种利用金属微结构的窄带滤波和光场增强功能，对量子点光电响应进行波长调制和增敏，实现高灵敏、可调谐的窄带光电探测器。
本发明所述金属微结构就是纳米级微尺寸的金属颗粒周期性排列的阵列。
本发明提出一种量子点光电探测器，其特征在于，包括从下至上的ITO玻璃衬底、ITO膜、金属微结构阵列、量子点薄膜和金属电极层；
进一步的，所述微结构阵列的材料为金、银、铝等；所述量子点薄膜材料包括硫化铅、硒化铅、硫化镉、硒化镉和氧化锌等在内的胶体量子点。
作为本发明的另一方面，提出了一种量子点光电探测器制备方法，包括如下步骤：
(1)选取ITO玻璃衬底为样片，在ITO玻璃衬底上旋涂PMMA光刻胶；
(2)光刻胶曝光及微结构图形定义；
(3)蒸镀一定厚度的金属薄膜；
(4)剥离光刻胶及金属微结构的生成；
(5)将制备好的量子点旋涂或喷涂在上述衬底上形成薄膜；
(6)继续蒸镀一定厚度的金属形成背底电极，完成器件制备。
进一步的，所述金属微结构尺寸可调，通过调整不同的微结构阵列周期与占空比即可实现不同波段的光电增强。
进一步的，所述量子点薄膜材料为硫化铅、硒化铅、硫化镉、硒化镉和氧化锌等在内的胶体量子点，通过选取合适的量子点材料体系以及改变量子点合成时间、温度等条件，调控量子点的峰值吸收波长位置，实现不同波段下的光电响应增强。
进一步的，所述步骤(3)与(6)中的蒸镀方法为电子束蒸发或磁控溅射方式。
进一步的，步骤(3)镀金厚度为50至100nm。
进一步的，步骤(4)中的剥离光刻胶方法为湿化学法。
本发明通过选取合适的金属和量子点材料体系，调节金属微结构阵列的结构设计与量子点尺寸，实现高灵敏、可调谐的窄带光电探测器，该制备方法简单，响应快，灵敏度高，具有广泛的应用前景。
附图说明
图1是探测器的结构示意图；
图2是微结构阵列单元排布示意图；
图3是微结构阵列单元示意图；
图4是系统测试示意图。
在所有附图中，相同的附图标记用来表示相同的元件或结构，其中：1为玻璃衬底、2为ITO膜、3为金属微结构、4为量子点薄膜、5为金属膜背电极、6为微结构单元、7为光源、8为电流测试系统。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本发明，并不用于限定本发明。此外，下面所描述的本发明各个实施方式中所涉及到的技术特征只要彼此之间未构成冲突就可以相互组合。
金属表面等离子体和入射光相互耦合，对特定波长的光电波实现共振，利于增强量子点薄膜的光吸收。光电波共振波长通过调节微结构阵列的周期性结构来控制，光电转换特性由调节的量子点薄膜吸收峰来进行增强，如图2、图3所示。在进行光电探测时，ITO膜作为下电极，利用硫化铅膜表面的金属膜作为上电极，连接电路测试系统，检测谐振波长的引起电流变化，具体示意如图4所示。
本发明提出的这种量子点材料的微结构光电探测器制作方法包括如下步骤：
首先，选取ITO玻璃衬底1，本实施中选取普通商用的ITO玻璃。第一步用丙酮溶液超声波清洁3分钟；第二步用无水乙醇溶液超声波清洁3分钟；最后在去离子水中用超声波清洁2分钟，将表面清洗干净以便于后续蒸镀。先在衬底上均匀涂抹一层PMMA曝光胶，涂抹时间90秒，匀胶机转速6000转/分钟，涂抹厚度约300nm。接着，在170℃下烘烤2分钟。设计一定周期性结构的微结构阵列，并制成版图。再使用电子束曝光设备将版图的图案转移至已经旋涂PMMA曝光胶的衬底上，曝光电流10nA。用电子束蒸发镀膜机在洁净的衬底表面蒸镀80nm厚的金属。通过湿化学方法去掉PMMA胶与附着在胶上的金属，此时样片表面形成微结构阵列。
以氧化铅(PbO)作为铅源，双三甲基硅硫烷(TMS)作为硫源，采用胶体化学法反应制备PbSe胶体量子点溶液。具体地，在氮气环境下将0.9g(4mmol)PbO溶解到20ml油酸(OA)并加热至90℃制备油酸铅的前驱物，作为铅源；抽真空达到8小时后，将该前驱物温度升至150℃；将420ul(1mmol)TMS溶解到10ml ODE中，作为硫源；在150℃下将硫源注入铅源中，待反应体系颜色完全变黑后(大约30s)降至室温；向冷却后的溶液中加入丙酮，离心搅拌后去除上清液，继而经过甲苯分散、丙酮离心多次循环直至上清液纯白；将最终所得产物烘干成粉末并分散在正辛烷中得到50mg/ml的硫化铅量子点溶液。然后通过旋涂方式在吸收峰在500到2000nm波长的微结构样片表面形成量子点薄膜，最后采用电子束蒸镀的方式在量子点薄膜表面蒸镀200nm厚的金属作为反射层，同时也作为上电极使用。
以醋酸铅(PbOAc)作为铅源，TOP硒作为硒源，采用胶体化学法反应制备PbS胶体量子点溶液。具体地，在氮气环境下将0.65g PbOAc溶解到10ml三辛基膦并加热至85℃制备铅的前驱物，作为铅源；抽真空达到8小时后，将该前驱物温度升至180℃；将1.7mL浓度为1M的TOPSe溶液在180℃下注入铅源中，反应1到10分钟降至室温；向冷却后的溶液中加入甲醇，离心搅拌后去除上清液将最终所得产物烘干成粉末并分散在甲苯中得到50mg/ml的硒化铅量子点溶液。然后通过旋涂方式在吸收峰在1000到4000nm波长的微结构样片表面形成量子点薄膜，最后采用电子束蒸镀的方式在量子点薄膜表面蒸镀200nm厚的金属作为反射层，同时也作为上电极使用。
以氧化镉(CdO)作为镉源，TOP硒作为硒源，采用胶体化学法反应制备CdSe胶体量子点溶液。具体地，在氮气环境下将0.05g CdO溶解到4gTOPO中并加热至320℃制备前驱物，作为镉源，将该前驱物温度降至270℃；将0.25mL浓度为1M的TOPSe溶液稀释4mLTOP之后在270℃下注入镉源中，反应之后离心，离心搅拌后去除上清液将最终所得产物分散在甲苯中得到50mg/ml的硒化镉量子点溶液。然后通过旋涂方式在吸收峰在400到800nm波长的微结构样片表面形成量子点薄膜，最后采用电子束蒸镀的方式在量子点薄膜表面蒸镀200nm厚的金属作为反射层，同时也作为上电极使用。
以乙酸镉作为镉源，硫化钠作为硫源，采用化学法反应制备CdS胶体量子点溶液。具体地，在氮气环境下将2.66g乙酸镉溶解到100ml去离子水中并加热至80℃，作为镉源；将等摩尔比的硫化钠溶液中，反应后降至室温；向冷却后的溶液中加入丙酮，离心搅拌后去除上清液将最终所得产物烘干成粉末并分散得到50mg/ml的硫化镉量子点溶液。然后通过旋涂方式在吸收峰在400到800nm波长的微结构样片表面形成量子点薄膜，最后采用电子束蒸镀的方式在量子点薄膜表面蒸镀200nm厚的金属作为反射层，同时也作为上电极使用。
一般探测器对设计波段具有良好的光电响应，同时会对紫外波段会产生响应。本探测器使用量子点材料作为光电探测材料,由于量子点材料本身就具有比较好的光电响应，所以对高能短波有更高的吸收效果。用金属微结构的窄带滤波功能替代滤波片减少紫外波段对探测器信号的影响，使测器在紫外波段出现微弱的响应不会影响工作波段的响应强度，同时利用金属微结构的光场增强功能，使得ITO与背底电极之间的电流发生显著变化。使用微结构阵列能减少光电探测器件的尺寸需求,便于集成化应用。
综上所述，本发明是一种量子点光电探测器及其制备方法，本领域的技术人员容易理解，以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。
Claims (9)
1.一种量子点光电探测器，其特征在于，包括从下至上的ITO玻璃衬底、ITO膜、金属微结构阵列、量子点薄膜和金属电极层。
2.根据权利要求1所述的光电探测器，其特征在于，所述微结构阵列的材料为金、银、铝等；所述量子点薄膜材料包括硫化铅、硒化铅、硫化镉、硒化镉和氧化锌等在内的胶体量子点。
3.根据权利要求1或2所述的光电探测器的制备方法，其特征在于，包括如下步骤：
(1)在ITO玻璃衬底上旋涂PMMA光刻胶；
(2)光刻胶曝光及微结构图形定义；
(3)蒸镀一定厚度的金属薄膜；
(4)剥离光刻胶及金属微结构的生成；
(5)将制备好的量子点旋涂或喷涂在上述衬底上形成薄膜；
(6)继续蒸镀一定厚度的金属形成背底电极，完成器件制备。
4.如权利要求3所述的光电探测器的制备方法，其特征在于，所述金属微结构尺寸可调，通过调整微结构阵列周期与占空比，对探测器的响应波长进行调制，获得波长选择性。
5.如权利要求3所描述的光电探测器的制备方法，其特征在于，所述量子点薄膜材料为硫化铅、硒化铅、硫化镉、硒化镉和氧化锌等在内的胶体量子点，通过选取合适的量子点材料体系以及改变量子点合成时间、温度等条件，调控量子点的峰值吸收波长位置，实现不同波段下的光电响应增强。
6.如权利要求3所描述的光电探测器的制备方法，其特征在于，所述步骤(3)与(6)中的蒸镀为电子束蒸发或磁控溅射方式。
7.如权利要求3所描述的光电探测器的制备方法，其特征在于，步骤(3)镀金厚度为50至100nm。
8.如权利要求3所描述的光电探测器的制备方法，其特征在于，步骤(2)中的光刻胶曝光方法为电子束曝光。
9.如权利要求3所描述的光电探测器的制备方法，其特征在于，步骤(5)中的光刻胶剥离方法为湿化学法。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710420652.4A CN107275421B (zh) | 2017-06-07 | 2017-06-07 | 一种量子点光电探测器及其制备方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710420652.4A CN107275421B (zh) | 2017-06-07 | 2017-06-07 | 一种量子点光电探测器及其制备方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107275421A true CN107275421A (zh) | 2017-10-20 |
| CN107275421B CN107275421B (zh) | 2020-01-14 |
Family
ID=60065963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710420652.4A Active CN107275421B (zh) | 2017-06-07 | 2017-06-07 | 一种量子点光电探测器及其制备方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107275421B (zh) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108444927A (zh) * | 2018-03-12 | 2018-08-24 | 华中科技大学 | 一种光谱分析芯片及其制备方法 |
| CN109301008A (zh) * | 2018-10-31 | 2019-02-01 | 深圳清华大学研究院 | 量子点光电探测器及其制备方法 |
| CN109904278A (zh) * | 2018-12-18 | 2019-06-18 | 杭州电子科技大学 | 一种光电探测器及制备方法 |
| CN110311007A (zh) * | 2019-07-09 | 2019-10-08 | 上海科技大学 | 一种量子点近红外光电探测器及其制备方法 |
| CN110967684A (zh) * | 2019-11-21 | 2020-04-07 | 宁波飞芯电子科技有限公司 | 光电探测器的尺寸确定方法、设备及光电探测器 |
| CN111380818A (zh) * | 2018-12-28 | 2020-07-07 | Tcl集团股份有限公司 | 薄膜及其制备方法和游离镉离子的检测方法 |
| CN111739963A (zh) * | 2020-06-10 | 2020-10-02 | 中国科学院上海微系统与信息技术研究所 | 一种硅基宽光谱光电探测器的制备方法 |
| CN112385049A (zh) * | 2018-11-19 | 2021-02-19 | 松下知识产权经营株式会社 | 光传感器及光检测系统 |
| CN113471310A (zh) * | 2021-06-25 | 2021-10-01 | 华南师范大学 | 一种基于混维体系的高增益光探测器及其制备方法 |
| CN113566979A (zh) * | 2021-06-11 | 2021-10-29 | 北京理工大学 | 压电谐振红外传感器、其阵列及其制造方法 |
| WO2021254093A1 (zh) * | 2020-06-15 | 2021-12-23 | 京东方科技集团股份有限公司 | 光电器件及其制备方法、光电探测器 |
| CN114354512A (zh) * | 2021-12-14 | 2022-04-15 | 之江实验室 | 一种量子点薄膜光谱检测仪器及其使用方法 |
| US20220165893A1 (en) * | 2020-11-24 | 2022-05-26 | SWIR Vision Systems Inc. | Photodetectors Having Optical Grating Couplers Integrated Therein and Related Methods |
| CN117038756A (zh) * | 2023-10-08 | 2023-11-10 | 长春理工大学 | 一种同时具有光谱及偏振选择性的量子点探测器 |
| CN117133833A (zh) * | 2023-10-20 | 2023-11-28 | 长春理工大学 | 一种光谱探测器芯片及其制备方法和光谱探测器 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1710450A (zh) * | 2005-06-17 | 2005-12-21 | 中国科学院光电技术研究所 | 基于金属微纳结构的光谱选择功能元件的设计方法 |
| CN102110736A (zh) * | 2010-11-09 | 2011-06-29 | 北京理工大学 | 一种基于胶体量子点的红外光电探测器及其制备方法 |
| CN103308486A (zh) * | 2013-05-23 | 2013-09-18 | 中国科学院长春光学精密机械与物理研究所 | 基于表面等离子体的复合谐振腔红外光子吸收器件 |
| CN104956483A (zh) * | 2013-01-25 | 2015-09-30 | 佛罗里达大学研究基金会有限公司 | 使用溶液处理pbs光探测器的新型ir图像传感器 |
-
2017
- 2017-06-07 CN CN201710420652.4A patent/CN107275421B/zh active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1710450A (zh) * | 2005-06-17 | 2005-12-21 | 中国科学院光电技术研究所 | 基于金属微纳结构的光谱选择功能元件的设计方法 |
| CN102110736A (zh) * | 2010-11-09 | 2011-06-29 | 北京理工大学 | 一种基于胶体量子点的红外光电探测器及其制备方法 |
| CN104956483A (zh) * | 2013-01-25 | 2015-09-30 | 佛罗里达大学研究基金会有限公司 | 使用溶液处理pbs光探测器的新型ir图像传感器 |
| CN103308486A (zh) * | 2013-05-23 | 2013-09-18 | 中国科学院长春光学精密机械与物理研究所 | 基于表面等离子体的复合谐振腔红外光子吸收器件 |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108444927A (zh) * | 2018-03-12 | 2018-08-24 | 华中科技大学 | 一种光谱分析芯片及其制备方法 |
| CN109301008A (zh) * | 2018-10-31 | 2019-02-01 | 深圳清华大学研究院 | 量子点光电探测器及其制备方法 |
| CN112385049A (zh) * | 2018-11-19 | 2021-02-19 | 松下知识产权经营株式会社 | 光传感器及光检测系统 |
| CN109904278A (zh) * | 2018-12-18 | 2019-06-18 | 杭州电子科技大学 | 一种光电探测器及制备方法 |
| CN111380818A (zh) * | 2018-12-28 | 2020-07-07 | Tcl集团股份有限公司 | 薄膜及其制备方法和游离镉离子的检测方法 |
| CN110311007A (zh) * | 2019-07-09 | 2019-10-08 | 上海科技大学 | 一种量子点近红外光电探测器及其制备方法 |
| CN110311007B (zh) * | 2019-07-09 | 2020-12-25 | 上海科技大学 | 一种量子点近红外光电探测器及其制备方法 |
| CN110967684A (zh) * | 2019-11-21 | 2020-04-07 | 宁波飞芯电子科技有限公司 | 光电探测器的尺寸确定方法、设备及光电探测器 |
| CN111739963A (zh) * | 2020-06-10 | 2020-10-02 | 中国科学院上海微系统与信息技术研究所 | 一种硅基宽光谱光电探测器的制备方法 |
| WO2021254093A1 (zh) * | 2020-06-15 | 2021-12-23 | 京东方科技集团股份有限公司 | 光电器件及其制备方法、光电探测器 |
| US20220165893A1 (en) * | 2020-11-24 | 2022-05-26 | SWIR Vision Systems Inc. | Photodetectors Having Optical Grating Couplers Integrated Therein and Related Methods |
| WO2022115373A1 (en) * | 2020-11-24 | 2022-06-02 | SWIR Vision Systems Inc. | Photodetectors having optical grating couplers integrated therein and related methods |
| CN113566979A (zh) * | 2021-06-11 | 2021-10-29 | 北京理工大学 | 压电谐振红外传感器、其阵列及其制造方法 |
| CN113566979B (zh) * | 2021-06-11 | 2023-06-13 | 北京理工大学 | 压电谐振红外传感器、其阵列及其制造方法 |
| CN113471310A (zh) * | 2021-06-25 | 2021-10-01 | 华南师范大学 | 一种基于混维体系的高增益光探测器及其制备方法 |
| CN114354512A (zh) * | 2021-12-14 | 2022-04-15 | 之江实验室 | 一种量子点薄膜光谱检测仪器及其使用方法 |
| CN117038756A (zh) * | 2023-10-08 | 2023-11-10 | 长春理工大学 | 一种同时具有光谱及偏振选择性的量子点探测器 |
| CN117038756B (zh) * | 2023-10-08 | 2024-04-02 | 长春理工大学 | 一种同时具有光谱及偏振选择性的量子点探测器 |
| CN117133833A (zh) * | 2023-10-20 | 2023-11-28 | 长春理工大学 | 一种光谱探测器芯片及其制备方法和光谱探测器 |
| CN117133833B (zh) * | 2023-10-20 | 2024-03-29 | 长春理工大学 | 一种光谱探测器芯片及其制备方法和光谱探测器 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107275421B (zh) | 2020-01-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107275421A (zh) | 一种量子点光电探测器及其制备方法 | |
| Tang et al. | Scalable fabrication of infrared detectors with multispectral photoresponse based on patterned colloidal quantum dot films | |
| Nasiri et al. | Three-dimensional nano-heterojunction networks: A highly performing structure for fast visible-blind UV photodetectors | |
| CN108444927B (zh) | 一种光谱分析芯片及其制备方法 | |
| US8598567B2 (en) | Color-selective quantum dot photodetectors | |
| CN104701393A (zh) | 双波段光电探测器及其制备方法 | |
| CN105493295A (zh) | 来自溶液处理的无机半导体的空气稳定红外光探测器 | |
| Jin et al. | Dynamics of semiconducting nanocrystal uptake into mesoporous TiO 2 thick films by electrophoretic deposition | |
| CN106356421A (zh) | 基于垂直导电方向的TiO2‑NiO异质P‑N结所形成光控传输沟道的紫外探测器及其制备方法 | |
| Jumabekov et al. | Fabrication of back-contact electrodes using modified natural lithography | |
| Beck et al. | Surface plasmon polariton couplers for light trapping in thin-film absorbers and their application to colloidal quantum dot optoelectronics | |
| CN109273543B (zh) | 硫族化合物膜上涂覆纳米颗粒的晶体管及制备方法与应用 | |
| CN113410317A (zh) | 一种具有表面等离激元的二维材料异质结光电探测器及其制备方法 | |
| CN104638066A (zh) | ZnO/ZnS/FeS2核壳结构阵列薄膜及制备方法 | |
| Bothra et al. | Impact of ligands on the performance of pbs quantum dot visible–near‐infrared photodetectors | |
| CN104409561A (zh) | 一种基于微球光学谐振增强的硅薄膜光探测器及其制备方法 | |
| CN103681940A (zh) | 一种二硫化钼-氧化锌量子点混合场效应光晶体管及其制造方法 | |
| CN103681938A (zh) | 一种氮化硼-氧化锌量子点混合场效应光晶体管及其制造方法 | |
| Brichkin et al. | Study of electrophotophysical characteristics of IR photodetectors based on PbS colloidal quantum dots | |
| Zhang et al. | Facilely Achieved Self‐Biased Black Silicon Heterojunction Photodiode with Broadband Quantum Efficiency Approaching 100% | |
| Yu et al. | Mie-type surface texture-integrated visible and short-wave infrared InGaAs/InP focal plane arrays | |
| Liu et al. | Sensitive silicon nanowire ultraviolet B photodetector induced by leakage mode resonances | |
| CN114685555B (zh) | 一种二维(PEA)2PbX4纳米片、制备方法及其在紫外光探测器中的应用 | |
| CN107359217B (zh) | 一种快速响应紫外光探测器及制备方法 | |
| Töfflinger et al. | Photoconductivity and optical properties of silicon coated by thin TiO2 film in situ doped by Au nanoparticles |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |