WO2021254093A1 - 光电器件及其制备方法、光电探测器 - Google Patents

光电器件及其制备方法、光电探测器 Download PDF

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WO2021254093A1
WO2021254093A1 PCT/CN2021/095130 CN2021095130W WO2021254093A1 WO 2021254093 A1 WO2021254093 A1 WO 2021254093A1 CN 2021095130 W CN2021095130 W CN 2021095130W WO 2021254093 A1 WO2021254093 A1 WO 2021254093A1
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electrode
photosensitive layer
group
quantum dots
photodetector
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PCT/CN2021/095130
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English (en)
French (fr)
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梅文海
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京东方科技集团股份有限公司
成都京东方光电科技有限公司
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Publication of WO2021254093A1 publication Critical patent/WO2021254093A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present disclosure relates to the technical field of photoelectric detection, in particular to a photoelectric device, a preparation method thereof, and a photodetector.
  • quantum dots have a wide range of applications in the field of photosensitive detection due to their very strong light absorption in the ultraviolet to visible region, as well as long carrier diffusion length and high mobility.
  • An embodiment of the present disclosure provides an optoelectronic device, the optoelectronic device includes: a photosensitive layer, and a first electrode and a second electrode respectively in contact with the photosensitive layer; a material of the photosensitive layer includes: a first group Quantum dots, and a polymer having a plurality of polymerized repeating units; the repeating unit includes at least one second group, and the second group is bonded to the first group of the quantum dot through a hydrogen bond .
  • both the first group and the second group include a polar group.
  • the polar group includes one or a combination of the following groups: hydroxyl group, aldehyde group, carbonyl group, amine group, ester group, ether bond.
  • the quantum dots include colloidal quantum dots.
  • the first electrode and the second electrode are located on the same side of the photosensitive layer.
  • An embodiment of the present disclosure provides a method for manufacturing an optoelectronic device, the method including:
  • a photosensitive layer solution is coated on the substrate, and a vacuum drying process is performed to form a photosensitive layer; wherein, the photosensitive layer solution includes: quantum dots with a first group, and polymerization with a plurality of polymerized repeating units The repeating unit includes at least one second group, and the second group is bonded to the first group of the quantum dot through a hydrogen bond;
  • the method further includes forming a first electrode and a second electrode respectively in contact with the photosensitive layer.
  • the coating a photosensitive layer solution on the substrate specifically includes:
  • the photosensitive layer solution is spin-coated on the substrate using a spin coating process.
  • An embodiment of the present disclosure provides a photodetector, the photodetector includes a plurality of photodetection units; the photodetection unit includes: a thin film transistor, and the photoelectric detector provided by the embodiment of the present disclosure electrically connected to the thin film transistor Device.
  • the thin film transistor includes: a gate, a gate insulating layer on the gate, an active layer on the gate insulating layer, a source on the active layer, and Drain
  • the photodetector also includes a protective layer on the source and drain;
  • the first electrode and the second electrode in the optoelectronic device are located on the protective layer, and the first electrode is electrically connected to the drain through a via hole penetrating the protective layer.
  • the layer is located on the first electrode and the second electrode.
  • the photodetector further includes: scan lines and data lines that cross horizontally and vertically, and a first signal line;
  • the photodetection unit array is arranged in the area divided by the scan line and the data line;
  • the scan line is electrically connected to the gate
  • the data line is electrically connected to the second electrode
  • the first signal line is electrically connected to the source electrode.
  • FIG. 1 is a schematic structural diagram of an optoelectronic device provided by an embodiment of the disclosure
  • FIG. 2 is a schematic diagram of forming a photosensitive layer of quantum dots by spin coating in the related art
  • FIG. 3 is a schematic diagram of forming a photosensitive layer of quantum dots by spin coating according to an embodiment of the present disclosure
  • FIG. 4 is a schematic diagram of a polymer and quantum dots in a photoelectric device provided by an embodiment of the present disclosure through hydrogen bonding;
  • FIG. 5 is a schematic structural diagram of another optoelectronic device provided by an embodiment of the disclosure.
  • FIG. 6 is a schematic structural diagram of another optoelectronic device provided by an embodiment of the disclosure.
  • FIG. 7 is a schematic diagram of a method for manufacturing a photoelectric device according to an embodiment of the disclosure.
  • FIG. 8 is a schematic structural diagram of a photodetector provided by an embodiment of the disclosure.
  • FIG. 9 is a schematic structural diagram of a photodetection unit in a photodetector provided by an embodiment of the disclosure.
  • quantum dots are used as the photosensitive layer material of the photodetector.
  • the quantum dot photosensitive layer is prone to uneven thickness, and the uneven thickness of the photosensitive layer affects the parallelism and spectral response of the device.
  • the volume resistance of areas with different thicknesses on the same film layer will be different.
  • the decrease in volume resistance in the thin film area will cause the dark current to increase significantly, while in the thick film area it may be
  • the related art quantum dots are not uniformly distributed in the photosensitive layer, which affects the magnitude of the photo-generated current, and affects the working stability and reliability of the optoelectronic device.
  • the photoelectric device includes: a photosensitive layer 2, and a first electrode 3 and a second electrode 4 respectively in contact with the photosensitive layer 2;
  • the material of the photosensitive layer 2 includes: A quantum dot with a first group, and a polymer with a plurality of polymerized repeating units; the repeating unit includes at least one second group, and the second group is bonded to the first group of the quantum dot through a hydrogen bond.
  • the concentration of the quantum dot solution needs to be increased.
  • the increase in the concentration of the quantum dot solution is not conducive to the dispersion of the quantum dots. stability.
  • partial aggregation of quantum dots QD may occur, resulting in uneven thickness of the formed quantum dot QD film.
  • the material of the photosensitive layer also includes a polymer, as shown in FIG.
  • the second group in the polymer and the first group in the quantum dot are combined through hydrogen bonds, and the polymer M can stabilize and induce the uniform dispersion of the quantum dots, so that the quantum dots QD are uniformly distributed, and a thin film with uniform thickness is formed.
  • the photosensitive layer includes a polymer in addition to the quantum dot layer, and the repeating unit of the polymer includes a second group, and the second group interacts with the first group in the quantum dot through a hydrogen bond
  • the photosensitive layer in the process of forming the photosensitive layer, it can stabilize and induce the uniform dispersion of the quantum dots, that is, the quantum dots can be uniformly distributed with the polymer material, so that the thickness of the formed photosensitive layer is uniform, and the difference in light response at different positions is reduced , Improve the working stability and reliability of optoelectronic devices.
  • both the first group and the second group include a polar group.
  • the second group in the polymer includes a polar group. Since the polar group is a hydrophilic group, in the process of forming the photosensitive layer, when the solution of the photosensitive layer is prepared, the polymer including the polar group is dissolved It can fully interact with polar molecules in a polar solvent, so that the polymer material is evenly distributed in the solvent, and the polar group of the polymer material can interact with the polar group of the quantum dot through hydrogen bonding, which can play a role.
  • the quantum dots can be uniformly distributed with the polymer material, so that the formed photosensitive layer has a uniform thickness, reduces the difference in light response at different positions, and improves the working stability and reliability of the optoelectronic device.
  • the polar group includes one or a combination of the following groups: hydroxyl, aldehyde, carbonyl, amine, ester, ether bond.
  • the polymer including a polar group may include, for example, polymethyl methacrylate, polyvinyl alcohol, polyethylene glycol, sodium polymethacrylate, and polyamide.
  • the quantum dots include colloidal quantum dots.
  • colloidal quantum dots can be, for example, cadmium sulfide (CdS), cadmium selenide (CdSe), zinc selenide (ZnSe), indium phosphide (InP), lead sulfide (PbS), inorganic perovskite ( CsPbCl 3 , CsPbBr 3 , CsPhI 3 ), CdS/ZnS, CdSe/ZnS, ZnSe, InP/ZnS, PbS/ZnS, CsPbCl 3 /ZnS, CsPbBr 3 /ZnS, CsPhI 3 /ZnS.
  • CdS cadmium sulfide
  • CdSe cadmium selenide
  • ZnSe zinc selenide
  • InP lead sulfide
  • PbS inorganic perovskite
  • CdS/ZnS CdSe/Z
  • the quantum dot material further includes a ligand that is coordinated with the quantum dot, and the ligand of the quantum dot may include a first group.
  • the first electrode 3 and the second electrode 4 are located on the same side of the photosensitive layer 2.
  • the optoelectronic device provided by the embodiment of the present disclosure further includes a substrate 1.
  • the first electrode 3 and the second electrode 4 are located on the same side of the photosensitive layer 2, as shown in FIG. 1, the first electrode 3 and the second electrode 4 are located on the side of the photosensitive layer 2 away from the substrate 1, or As shown in FIG. 5, the first electrode 3 and the second electrode 4 are located between the photosensitive layer 2 and the substrate 1.
  • the photoelectric device provided by the embodiment of the present disclosure may also have a vertical structure. As shown in FIG. 6, the photosensitive layer 2 is located between the first electrode 3 and the second electrode 4.
  • the material of the first electrode 3 and the second electrode 4 includes metal.
  • the embodiments of the present disclosure also provide a method for manufacturing the above-mentioned optoelectronic device provided by the embodiments of the present disclosure, as shown in FIG. 7, including:
  • S102 Coating a photosensitive layer solution on the substrate and performing a vacuum drying process to form a photosensitive layer; wherein the photosensitive layer solution includes: quantum dots with first groups and polymers with multiple polymerized repeating units, The repeating unit includes at least one second group, and the second group is bonded to the first group of the quantum dot through a hydrogen bond;
  • the photosensitive layer solution includes a quantum dot material and a polymer
  • the repeating unit of the polymer includes a second group
  • the second group interacts with the first group in the quantum dot through Hydrogen bonding can stabilize and induce the uniform dispersion of quantum dots during the process of forming the photosensitive layer, that is, the quantum dots can be uniformly distributed with the polymer material, so that the thickness of the photosensitive layer formed is uniform, and the light at different positions is reduced. Responding to differences, improve the working stability and reliability of optoelectronic devices.
  • step S102 coating a photosensitive layer solution on the substrate specifically includes:
  • the first solvent may be ethanol, for example.
  • forming the first electrode and the second electrode respectively in contact with the photosensitive layer specifically includes:
  • an evaporation process is used to form the patterns of the first electrode and the second electrode on the substrate.
  • the polymer solid content can be, for example, 1%-50%, and the polyethylene glycol solid content in the embodiment of the present disclosure can be selected, for example, 5%;
  • the spin coating speed is 3000 revolutions per minute (rpm), and the spin coating time is 40 seconds;
  • the vacuum degree is kept below 1 ⁇ 10 -4 Pa (Pa) during the evaporation process.
  • An embodiment of the present disclosure provides a photodetector.
  • the photodetector includes a plurality of photodetection units 5; the photodetection unit 5 includes: a thin film transistor (TFT) 6 and a thin film transistor 6
  • TFT thin film transistor
  • the photoelectric device 7 provided by the embodiment of the present disclosure is electrically connected.
  • the photodetector provided by the embodiment of the present disclosure includes the photoelectric device provided by the embodiment of the present disclosure
  • the second group of the polymer in the photoelectric device interacts with the first group in the quantum dot through hydrogen bonding to form a photosensitive device.
  • it can stabilize and induce uniform dispersion of quantum dots, that is, quantum dots can be evenly distributed with polymer materials, so that the thickness of the photosensitive layer formed is uniform, reducing the difference in light response at different positions, and improving the photodetector The stability and reliability of the work.
  • the thin film transistor 6 includes: a gate 8, a gate insulating layer 9 located on the gate 8, and located on the gate insulating layer 9 The active layer 10, the source 11 and the drain 12 located on the active layer 10;
  • the photodetector also includes a protective layer 13 on the source 11 and the drain 12;
  • the first electrode 3 and the second electrode 4 in the optoelectronic device 7 are located on the protective layer 13.
  • the first electrode 3 is electrically connected to the drain 12 through a via hole penetrating the protective layer 13, and the photosensitive layer 2 in the optoelectronic device 7 is located on the first Above an electrode 3 and a second electrode 4.
  • the photodetector further includes: a scan line 14 and a data line 15 that cross horizontally and vertically, and a first signal line (not shown) ;
  • the photodetection unit 5 is arranged in an array in the area divided by the scan line 14 and the data line 15;
  • the scan line 14 is electrically connected to the gate
  • the data line 15 is electrically connected to the second electrode
  • the first signal line is electrically connected to the source.
  • the bottom gate structure of the TFT is taken as an example for illustration. In specific implementation, the top gate structure of the TFT may also be selected.
  • the first electrode and the second electrode in the photoelectric device in FIG. 8 are located between the photosensitive layer and the protective layer. Of course, in specific implementation, the first electrode and the second electrode may also be located on the side of the photosensitive layer away from the protective layer.
  • the material of the gate may include molybdenum (Mo)
  • the material of the gate insulating layer may include silicon nitride (SiN) or silicon oxide (SiO)
  • the material of the active layer may include amorphous silicon (a -Si)
  • the material of the source and drain may include, for example, a titanium/aluminum/titanium (Ti/Al/Ti) stack
  • the material of the protective layer may include, for example, SiN
  • the material of the first electrode and the second electrode may include, for example Indium tin oxide (ITO).
  • ITO Indium tin oxide
  • the photodetector provides a scan signal to the gate of the TFT through a scan line, and provides a first voltage signal to the second electrode through a data line.
  • the quantum dots in the photosensitive layer are irradiated by a certain wavelength of light, the carrier is excited.
  • the currents are separated to form electrons and holes, and a current is formed along the photosensitive layer.
  • the current passes from the first electrode to the drain through the via hole of the protective layer.
  • a current signal is formed in the direction to the source, and the current signal of the source is output through the first signal line, and the information transmitted by the quantum dot photosensitive layer can be identified.
  • the photosensitive layer not only includes the quantum dot layer, but also includes a polymer, and the repeating unit of the polymer includes the second group, and the second group and the quantum dot
  • the interaction of the first group in the photo-sensitive layer is combined by hydrogen bonding.
  • it can stabilize and induce the uniform dispersion of the quantum dots, that is, the quantum dots can be uniformly distributed with the polymer material, so that the formed photosensitive layer
  • the layer thickness is uniform, reducing the difference in light response at different positions, and improving the working stability and reliability of the optoelectronic device.

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Abstract

本公开提供了一种光电器件及其制备方法、光电探测器，用以提高光电器件中感光层的厚度均一性。本公开实施例提供的一种光电器件，所述光电器件包括：感光层，以及分别与所述感光层接触的第一电极和第二电极；所述感光层的材料包括：具有第一基团的量子点，以及具有多个聚合的重复单元的聚合物；所述重复单元包括至少一个第二基团，所述第二基团通过氢键与所述量子点的所述第一基团结合。

Description

光电器件及其制备方法、光电探测器
相关申请的交叉引用
本公开要求在2020年06月15日提交中国专利局、申请号为202010541931.8、申请名称为“一种光电器件及其制备方法、光电探测器”的中国专利申请的优先权，其全部内容通过引用结合在本公开中。
技术领域
本公开涉及光电探测技术领域，尤其涉及一种光电器件及其制备方法、光电探测器。
背景技术
目前，量子点由于具有非常强的紫外到可见区域的光吸收，而且具有很长的载流子扩散长度和很高的迁移率，因此在光敏探测领域的研究上有广泛的应用。
发明内容
本公开实施例提供的一种光电器件，所述光电器件包括：感光层，以及分别与所述感光层接触的第一电极和第二电极；所述感光层的材料包括：具有第一基团的量子点，以及具有多个聚合的重复单元的聚合物；所述重复单元包括至少一个第二基团，所述第二基团通过氢键与所述量子点的所述第一基团结合。
可选地，所述第一基团和所述第二基团均包括极性基团。
可选地，所述极性基团包括下列基团之一或其组合：羟基，醛基，羰基，胺基，酯基，醚键。
可选地，所述量子点包括胶体量子点。
可选地，所述第一电极和所述第二电极位于所述感光层的同一侧。
本公开实施例提供的一种光电器件的制备方法，所述方法包括：
提供衬底；
在所述衬底之上涂覆感光层溶液，进行真空干燥工艺，形成感光层；其中，所述感光层溶液包括：具有第一基团的量子点，以及具有多个聚合的重复单元的聚合物，所述重复单元包括至少一个第二基团，所述第二基团通过氢键与所述量子点的所述第一基团结合；
所述方法还包括：形成分别与所述感光层接触的第一电极和第二电极。
可选地，所述在所述衬底之上涂覆感光层溶液，具体包括：
将所述量子点溶解在第一溶剂中，获得量子点溶液；
将所述聚合物加入到所述量子点溶液，获得感光层溶液；
采用旋涂工艺将所述感光层溶液旋涂在所述衬底上。
本公开实施例提供的一种光电探测器，所述光电探测器包括多个光电探测单元；所述光电探测单元包括：薄膜晶体管，以及与所述薄膜晶体管电连接的本公开实施例提供的光电器件。
可选地，所述薄膜晶体管包括：栅极、位于所述栅极之上的栅绝缘层，位于所述栅绝缘层之上的有源层，位于所述有源层之上的源极和漏极；
所述光电探测器还包括位于所述源极和漏极之上的保护层；
所述光电器件中的第一电极和第二电极位于所述保护层之上，所述第一电极通过贯穿所述保护层的过孔与所述漏极电连接，所述光电器件中的感光层位于所述第一电极和所述第二电极之上。
可选地，所述光电探测器还包括：横纵交叉的扫描线和数据线，以及第一信号线；
所述光电探测单元阵列排布于所述扫描线和所述数据线划分的区域；
所述扫描线与所述栅极电连接；
所述数据线与所述第二电极电连接；
所述第一信号线与所述源极电连接。
附图说明
图1为本公开实施例提供的一种光电器件的结构示意图；
图2为相关技术旋涂形成量子点感光层的示意图；
图3为本公开实施例提供的一种旋涂形成量子点感光层的示意图；
图4为本公开实施例提供的一种光电器件中聚合物与量子点通过氢键结合的示意图；
图5为本公开实施例提供的另一种光电器件的结构示意图；
图6为本公开实施例提供的又一种光电器件的结构示意图；
图7为本公开实施例提供的一种光电器件的制备方法的示意图；
图8为本公开实施例提供的一种光电探测器的结构示意图；
图9为本公开实施例提供的一种光电探测器中的光电探测单元的结构示意图。
具体实施方式
目前制备的量子点光探测器，量子点作为光电探测器的感光层材料。但是，相关技术中量子点感光层容易出现厚度不均的情况，而感光层厚度的不均匀会影响器件的平行性和光谱响应。另外由于量子点感光层厚度的不均匀会导致同一膜层上不同厚度的区域体电阻的不同，在薄的薄膜区域体电阻下降会使得暗电流显著增大，而在厚的薄膜区域则可能会存在由于电场减弱而造成载流子输运效率低以及激子解离效率下降的问题，由于感光层自身的不均匀，很容易影响光生电流的大小。
综上，相关技术量子点在感光层分布不均匀，影响光生电流的大小，影响光电器件的工作稳定性以及可靠性。
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。并且在不冲突的情况下，本公开中的实施例及实施例中的特征可以相互组合。基于所 描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“内”、“外”、“上”、“下”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
需要注意的是，附图中各图形的尺寸和形状不反映真实比例，目的只是示意说明本公开内容。并且自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。
本公开实施例提供了一种光电器件，如图1所示，光电器件包括：感光层2，以及分别与感光层2接触的第一电极3和第二电极4；感光层2的材料包括：具有第一基团的量子点，以及具有多个聚合的重复单元的聚合物；重复单元包括至少一个第二基团，第二基团通过氢键与量子点的第一基团结合。
需要说明的是，相关技术在制备包括量子点材料感光层时，当采用旋涂的方法制备厚光敏膜层时，需要提升量子点溶液的浓度，量子点溶液浓度的增加不利于量子点的分散稳定性。如图2所示，在旋涂成膜的过程中会出现量子点QD的部分聚集，导致形成的量子点QD膜层厚度不均匀。而本公开实施例提供的光电器件，由于感光层的材料还包括聚合物，如图3所示，在形成感光层的工艺过程中，聚合物中的第二基团与量子点中的第一基团通过氢键结合，聚合物M可以起到稳定和诱导量子点分散均匀的作用，使得量子点QD均匀分布，形成厚度均匀的薄膜。
本公开实施例提供的光电器件，感光层除了包括量子点层还包括聚合物，聚合物的重复单元包括第二基团，第二基团与量子点中的第一基团相互作用 通过氢键结合，在形成感光层的工艺过程中，可以起到稳定和诱导量子点分散均匀的作用，即量子点可以与聚合物材料均匀分布，使得形成的感光层厚度均一，降低不同位置的光响应差异，提高光电器件的工作稳定性以及可靠性。
可选地，在本公开实施例提供的光电器件中，第一基团和第二基团均包括极性基团。
聚合物中的第二基团包括极性基团，由于极性基团属于亲水性基团，在形成感光层的工艺中，制备感光层的溶液时，包括极性基团的聚合物溶解在极性溶剂中能够与极性分子充分作用，使得聚合物材料均匀分布在溶剂中，并且聚合物材料的极性基团可以与量子点的极性基团相互作用通过氢键结合，可以起到稳定和诱导量子点分散均匀的作用，从而量子点可以与聚合物材料均匀分布，使得形成的感光层厚度均一，降低不同位置的光响应差异，提高光电器件的工作稳定性以及可靠性。
可选地，在本公开实施例提供的光电器件中，极性基团包括下列基团之一或其组合：羟基，醛基，羰基，胺基，酯基，醚键。
在具体实施时，包括极性基团的聚合物例如可以包括：聚甲基丙烯酸甲酯，聚乙烯醇，聚乙二醇，聚甲基丙烯酸钠，聚酰胺。
以聚合物为聚甲基丙烯酸甲酯([C 5H 8O 2] n)为例，聚合物中的极性基团与量子点通过氢键结合的示意图如图4所示。
可选地，在本公开实施例提供的光电器件中，量子点包括胶体量子点。
在具体实施时，胶体量子点例如可以是：硫化镉(CdS)、硒化镉(CdSe)、硒化锌(ZnSe)、磷化铟(InP)、硫化铅(PbS)、无机钙钛矿(CsPbCl 3、CsPbBr 3、CsPhI 3)、CdS/ZnS、CdSe/ZnS、ZnSe、InP/ZnS、PbS/ZnS、CsPbCl 3/ZnS、CsPbBr 3/ZnS、CsPhI 3/ZnS。
在具体实施时，量子点材料还包括与量子点配位结合的配体，量子点的配体可以包括第一基团。
可选地，在本公开实施例提供的光电器件中，第一电极3和第二电极4 位于感光层2的同一侧。
本公开实施例提供的光电器件还包括衬底1。当第一电极3和第二电极4位于感光层2的同一侧时，可以是如图1所示，第一电极3和第二电极4位于感光层2远离衬底1的一侧，也可以是如图5所示，第一电极3和第二电极4位于感光层2和衬底1之间。
当然，本公开实施例提供的光电器件也可以是垂直型结构，如图6所示，感光层2位于第一电极3和第二电极4之间。
可选地，在本公开实施例提供的光电器件中，第一电极3和第二电极4的材料包括金属。
基于同一发明构思，本公开实施例还提供了一种本公开实施例提供的上述光电器件的制备方法，如图7所示，包括：
S101、提供衬底；
S102、在衬底之上涂覆感光层溶液，进行真空干燥工艺，形成感光层；其中，感光层溶液包括：具有第一基团的量子点，以及具有多个聚合的重复单元的聚合物，重复单元包括至少一个第二基团，第二基团通过氢键与量子点的第一基团结合；
S103、形成分别与感光层接触的第一电极和第二电极。
本公开实施例提供的光电器件的制备方法，感光层溶液包括量子点材料以及聚合物，聚合物的重复单元包括第二基团，第二基团与量子点中的第一基团相互作用通过氢键结合，在形成感光层的工艺过程中，可以起到稳定和诱导量子点分散均匀的作用，即量子点可以与聚合物材料均匀分布，使得形成的感光层厚度均一，降低不同位置的光响应差异，提高光电器件的工作稳定性以及可靠性。
可选地，步骤S102在衬底之上涂覆感光层溶液，具体包括：
S1021、将量子点溶解在第一溶剂中，获得量子点溶液；
S1022、将聚合物加入到量子点溶液，获得感光层溶液；
S1023、采用旋涂工艺将感光层溶液旋涂在衬底上。
在具体实施时，第一溶剂例如可以是乙醇。
可选地，形成分别与感光层接触的第一电极和第二电极，具体包括：
采用蒸镀工艺在感光层上形成第一电极和第二电极的图案；
或者，在形成感光层之前，在衬底上采用蒸镀工艺形成第一电极和第二电极的图案。
接下来，以先形成感光层，再形成第一电极和第二电极为例，对本公开实施例提供的光电器件的制备方法进行举例说明，聚合物选择聚乙二醇，聚乙二醇的分子量Mn＝2000，量子点选择CdSe/CdS，量子点的配体选择1-羟基-己硫醇，光电器件的制备方法包括如下步骤：
S201、将与配体配位结合的量子点材料溶解在乙醇中，形成80毫克/毫升(mg/ml)的量子点溶液；
S202、将聚乙二醇加入到量子点溶液中，获得感光层溶液；
具体实施时，聚合物固含量例如可以是1％～50％，本公开实施例聚乙二醇固含量例如可以选择5％；
S203、将感光层溶液旋涂于硅片表面，之后将旋涂有感光层的硅片放入真空干燥箱中在120℃的温度条件下退火1小时；
旋涂速度为3000每分钟转数(rpm)，旋涂时间为40秒；
S204、在感光层上蒸镀厚度为100纳米(nm)的金，形成第一电极和第二电极的图案；
具体实施时，蒸镀过程中真空度保持在1×10 -4帕(Pa)以下。
本公开实施例提供的一种光电探测器，如图8和图9所示，光电探测器包括多个光电探测单元5；光电探测单元5包括：薄膜晶体管(TFT)6，以及与薄膜晶体管6电连接的本公开实施例提供的光电器件7。
本公开实施例提供的光电探测器，由于包括本公开实施例提供的光电器件，光电器件中聚合物的第二基团与量子点中的第一基团相互作用通过氢键结合，在形成感光层的工艺过程中，可以起到稳定和诱导量子点分散均匀的作用，即量子点可以与聚合物材料均匀分布，使得形成的感光层厚度均一， 降低不同位置的光响应差异，提高光电探测器的工作稳定性以及可靠性。
可选地，在本公开实施例提供的光电探测器中，如图9所示，薄膜晶体管6包括：栅极8、位于栅极8之上的栅绝缘层9，位于栅绝缘层9之上的有源层10，位于有源层10之上的源极11和漏极12；
光电探测器还包括位于源极11和漏极12之上的保护层13；
光电器件7中的第一电极3和第二电极4位于保护层13之上，第一电极3通过贯穿保护层13的过孔与漏极12电连接，光电器件7中的感光层2位于第一电极3和第二电极4之上。
可选地，在本公开实施例提供的光电探测器中，如图8所示，光电探测器还包括：横纵交叉的扫描线14和数据线15，以及第一信号线(未示出)；
光电探测单元5阵列排布于扫描线14和数据线15划分的区域；
扫描线14与栅极电连接；
数据线15与第二电极电连接；
第一信号线与源极电连接。
需要说明的是，图8中以TFT为底栅结构为例，进行举例说明，在具体实施时，TFT也可以选择顶栅结构。图8中光电器件中的第一电极和第二电极位于感光层与保护层之间，当然在具体实施时，第一电极和第二电极也可以位于感光层背离保护层一侧。
具体实施时，栅极的材料例如可以包括钼(Mo)，栅绝缘层的材料例如可以包括氮化硅(SiN)或氧化硅(SiO)，有源层的材料例如可以包括非晶硅(a-Si)，源极和漏极的材料例如可以包括钛/铝/钛(Ti/Al/Ti)叠层，保护层的材料例如可以包括SiN，第一电极和第二电极的材料例如可以包括氧化铟锡(ITO)。
接下来以如图8和图9所示的光电探测器为例，对本公开实施例提供的光电探测器的工作原理进行具体介绍。在具体实施时，光电探测器通过扫描线向TFT的栅极提供扫描信号，通过数据线向第二电极提供第一电压信号，当感光层中的量子点被某种波长的光照射时激发载流子分离形成电子和空穴，沿感光层形成电流，电流通过保护层的过孔从第一电极传到漏极，当栅极相 对于源极的电压Vgs大于TFT阈值电压时，沿漏极到源极的方向形成电流信号，通过第一信号线输出源极的电流信号，便可以识别出量子点感光层传递的信息。
综上，本公开实施例提供的光电器件及其制备方法、光电探测器，感光层除了包括量子点层还包括聚合物，聚合物的重复单元包括第二基团，第二基团与量子点中的第一基团相互作用通过氢键结合，在形成感光层的工艺过程中，可以起到稳定和诱导量子点分散均匀的作用，即量子点可以与聚合物材料均匀分布，使得形成的感光层厚度均一，降低不同位置的光响应差异，提高光电器件的工作稳定性以及可靠性。
显然，本领域的技术人员可以对本公开进行各种改动和变型而不脱离本公开的精神和范围。这样，倘若本公开的这些修改和变型属于本公开权利要求及其等同技术的范围之内，则本公开也意图包含这些改动和变型在内。

Claims (10)

  1. 一种光电器件，其中，所述光电器件包括：感光层，以及分别与所述感光层接触的第一电极和第二电极；所述感光层的材料包括：具有第一基团的量子点，以及具有多个聚合的重复单元的聚合物；所述重复单元包括至少一个第二基团，所述第二基团通过氢键与所述量子点的所述第一基团结合。
  2. 根据权利要求1所述的光电器件，其中，所述第一基团和所述第二基团均包括极性基团。
  3. 根据权利要求2所述的光电器件，其中，所述极性基团包括下列基团之一或其组合：羟基，醛基，羰基，胺基，酯基，醚键。
  4. 根据权利要求1所述的光电器件，其中，所述量子点包括胶体量子点。
  5. 根据权利要求1所述的光电器件，其中，所述第一电极和所述第二电极位于所述感光层的同一侧。
  6. 一种根据权利要求1～5任一项所述的光电器件的制备方法，其中，所述方法包括：
    提供衬底；
    在所述衬底之上涂覆感光层溶液，进行真空干燥工艺，形成感光层；其中，所述感光层溶液包括：具有第一基团的量子点，以及具有多个聚合的重复单元的聚合物，所述重复单元包括至少一个第二基团，所述第二基团通过氢键与所述量子点的所述第一基团结合；
    所述方法还包括：形成分别与所述感光层接触的第一电极和第二电极。
  7. 根据权利要求6所述的方法，其中，所述在所述衬底之上涂覆感光层溶液，具体包括：
    将所述量子点溶解在第一溶剂中，获得量子点溶液；
    将所述聚合物加入到所述量子点溶液，获得感光层溶液；
    采用旋涂工艺将所述感光层溶液旋涂在所述衬底上。
  8. 一种光电探测器，其中，所述光电探测器包括多个光电探测单元；所 述光电探测单元包括：薄膜晶体管，以及与所述薄膜晶体管电连接的根据权利要求1～5任一项所述的光电器件。
  9. 根据权利要求8所述的光电探测器，其中，所述薄膜晶体管包括：栅极、位于所述栅极之上的栅绝缘层，位于所述栅绝缘层之上的有源层，位于所述有源层之上的源极和漏极；
    所述光电探测器还包括位于所述源极和漏极之上的保护层；
    所述光电器件中的第一电极和第二电极位于所述保护层之上，所述第一电极通过贯穿所述保护层的过孔与所述漏极电连接，所述光电器件中的感光层位于所述第一电极和所述第二电极之上。
  10. 根据权利要求9所述的光电探测器，其中，所述光电探测器还包括：横纵交叉的扫描线和数据线，以及第一信号线；
    所述光电探测单元阵列排布于所述扫描线和所述数据线划分的区域；
    所述扫描线与所述栅极电连接；
    所述数据线与所述第二电极电连接；
    所述第一信号线与所述源极电连接。
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