CN117038756B - 一种同时具有光谱及偏振选择性的量子点探测器 - Google Patents
一种同时具有光谱及偏振选择性的量子点探测器 Download PDFInfo
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Abstract
一种同时具有光谱及偏振选择性的量子点探测器。属于偏振探测成像技术领域，具体涉及量子点探测器技术领域。其解决了以往探测器不能同时具备波段选择性及偏振选择性或者同时集合了波段选择性及偏振选择性的探测器结构过于复杂的问题。所述量子点探测器包括基底、等离子体共振光栅、红外量子点层和顶电极，所述基底置于最底层，所述等离子体共振光栅设置于所述基底之上，所述红外量子点层设置于所述等离子体共振光栅之上，所述顶电极设置于所述红外量子点层之上。本发明所述方法可以应用在光学通信技术领域、显示技术领域、光学成像技术领域、遥感和地球观测技术领域以及生物医学技术领域。
Description
技术领域
本发明属于偏振探测成像技术领域，具体涉及量子点探测器技术领域。
背景技术
传统偏振探测器或偏振成像系统，大多采用外置偏振滤光片的形式进行偏振滤光，不具备波段选择性，同时外置滤光片的设置导致系统体积较大，结构复杂。
传统光谱探测器或光谱成像系统，大多采用外置窄带滤光片的形式进行波段选择，不具备偏振选择性，同时外置窄带滤光片的设置导致系统体积较大，结构复杂。
同时采用偏振滤光及窄带光谱滤光片可以实现偏振及光谱选择性，但是双层滤光片的结构会损失大量的入射光能量，导致信号强度低。同时，双层滤光片的设置增加系统复杂度及体积。
发明内容
本发明为了解决以往探测器不能同时具备波段选择性及偏振选择性或者同时集合了波段选择性及偏振选择性的探测器结构过于复杂的问题，提供了一种同时具有光谱及偏振选择性的量子点探测器。
所述量子点探测器包括基底、等离子体共振光栅、红外量子点层和顶电极，所述基底置于最底层，所述等离子体共振光栅设置于所述基底之上，所述红外量子点层设置于所述等离子体共振光栅之上，所述顶电极设置于所述红外量子点层之上。
进一步，所述等离子体共振光栅的材料包括金属，所述等离子体共振光栅采用线栅结构，线栅周期为0.2-10微米，占空比在10%-90%之间。
进一步，所述等离子体共振光栅通过金属与基底之间的电子互相作用与所述基底键合。
进一步，所述等离子体共振光栅的制备方法具体为：
步骤1：在基板上使用旋涂方式将光刻胶均匀地涂覆形成薄膜，然后，对旋涂在基板上的光刻胶进行图案化曝光，通过显影过程去除曝光区域的光刻胶，得到所需的制备等离子体共振光栅的图案化光刻胶薄膜；
步骤2：使用电子束蒸镀、磁控溅射或热蒸发的方法，在所述光刻胶薄膜上沉积制备等离子体共振光栅的金属；
步骤3：通过使用去胶液刻蚀的方法，将光刻胶部分区域剥离，从而得到等离子体共振光栅。
进一步，所述红外量子点层通过液相化学方法合成得到，所述红外量子点层选用的材料包括碲化汞、硫化铅、硒化铅和碲化镉。
进一步，所述红外量子点层通过旋涂、喷涂或者印刷的方式与所述等离子体共振光栅键合。
进一步，所述顶电极的材料包括金属和导电氧化物，所述顶电极的厚度在5-10纳米，所述顶电极的透光率不低于80%。
进一步，所述顶电极通过化学键或物理键与所述红外量子点层键合。
本发明所述方法的有益效果为：
（1）本发明提出采用等离子体共振的线栅结构，并将该结构与探测器光敏层进行整合。等离子体共振的线栅结构将等离子体共振结构的波段选择性与线栅结构的偏振选择行进行结合，使得基于红外量子点探测器兼顾了波段和偏振选择的特性。
（2）同时该结构在特定波长及特定偏振方向的入射光照射下发生共振，进而实现近场光强度增强，从而完成探测信号的增强。由于该结构预埋于探测器光敏层附近，增强的光场信号可以被光敏层转化为光电流。本发明提出的探测器结构设计，兼具了光谱选择、偏振选择及信号增强的作用。
（3）由于采用线栅结构，只有偏振方向为垂直于线栅结构的入射光才能激发共振。线栅结构的一端连接到一起，使得整个线栅结构组成公共电极，作为探测器的底电极实现载流子收集。与传统红外偏振光探测器使用复杂笨重的外置偏振滤光片相比，该结构采用光栅结构金属电极，实现了载流子的收集和偏振光的选择，从而大大简化了器件的结构。
本发明所述方法可以应用在光学通信技术领域、显示技术领域、光学成像技术领域、遥感和地球观测技术领域以及生物医学技术领域。
附图说明
图1为本发明实施例所述量子点探测器结构图；
图2为本发明实施例所述等离子体共振光栅结构图。
具体实施方式
下面将结合附图对本发明的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明的保护范围。
实施例1、
本实施例提供一种同时具有光谱及偏振选择性的量子点探测器，如图1所示，所述量子点探测器包括基底、等离子体共振光栅、红外量子点层和顶电极，基底置于最底层，等离子体共振光栅设置于基底之上，红外量子点层设置于等离子体共振光栅之上，顶电极设置于红外量子点层之上。
基底可以是硅片、蓝宝石片或者具有放大电路的读出电路。
等离子体共振光栅结构，材料为金、银或者铝等高导电材料，线栅周期为0.2-10微米，占空比在10-90%之间，根据材料、周期及占空比的不同，结构的等离子体共振波长可在1-12微米之间调整。由于采用线栅结构，只有偏振方向为垂直于线栅结构的入射光才能激发共振。如图2所示，线栅结构的一端连接到一起，使得整个线栅结构组成公共电极，作为探测器的底电极实现载流子收集。与传统红外偏振光探测器使用复杂笨重的外置偏振滤光片相比，该结构采用光栅结构金属电极，实现了载流子的收集和偏振光的选择，从而大大简化了器件的结构。
红外量子点层可以为碲化汞、硫化铅、硒化铅、碲化镉等材料，材料的吸收波段可以覆盖0.7-12微米范围，通过液相化学方法合成得到，厚度在400-1000纳米之间。传统红外探测器采用复杂的倒装键合工艺将外延生长的碲镉汞、铟镓砷或超晶格等无机块状晶体材料与电极集成，无法直接在金属电极的线栅结构上形成薄膜。相比之下，利用液相化学方法合成的红外胶体量子点可以简单地通过旋涂、喷涂和印刷等方式与线栅结构金属电极直接键合，从而降低了制备成本和工艺复杂度。
顶电极，可以采用电子束蒸镀、磁控溅射、热蒸发镀膜等方式进行加工，电极通过范德华力、静电吸引力等作用力与红外量子点层进行连接。主要材料包括金属（金、银、铜、钛）及导电氧化物（ITO、FTO）等，典型厚度在5-10纳米，具有透光率一般不低于80%。
实施例2、
本实施例是对实施例1的进一步限定，等离子体共振光栅的制备方法具体为：
步骤1：在基板上使用旋涂方式将光刻胶均匀地涂覆形成薄膜，然后，对旋涂在基板上的光刻胶进行图案化曝光，通过显影过程去除曝光区域的光刻胶，得到所需的制备等离子体共振光栅的图案化光刻胶薄膜；
步骤2：使用电子束蒸镀、磁控溅射或热蒸发的方法，在所述光刻胶薄膜上沉积制备等离子体共振光栅的金属；
步骤3：通过使用去胶液刻蚀的方法，将光刻胶部分区域剥离，从而得到等离子体共振光栅。
Claims (7)
1.一种同时具有光谱及偏振选择性的量子点探测器，其特征在于，所述量子点探测器包括基底、等离子体共振光栅、红外量子点层和顶电极，所述基底置于最底层，所述等离子体共振光栅设置于所述基底之上，所述红外量子点层设置于所述等离子体共振光栅之上，所述顶电极设置于所述红外量子点层之上；所述等离子体共振光栅的材料包括金属，所述等离子体共振光栅采用线栅结构，线栅周期为0.2-10微米，占空比在10%-90%之间，线栅结构的一端连接到一起，使得整个线栅结构组成公共电极。
2.根据权利要求1所述的量子点探测器，其特征在于，所述等离子体共振光栅通过金属与基底之间的电子互相作用与所述基底键合。
3.根据权利要求1所述的量子点探测器，其特征在于，所述等离子体共振光栅的制备方法具体为：
步骤1：在基板上使用旋涂方式将光刻胶均匀地涂覆形成薄膜，然后，对旋涂在基板上的光刻胶进行图案化曝光，通过显影过程去除曝光区域的光刻胶，得到所需的制备等离子体共振光栅的图案化光刻胶薄膜；
步骤2：使用电子束蒸镀、磁控溅射或热蒸发的方法，在所述光刻胶薄膜上沉积制备等离子体共振光栅的金属；
步骤3：通过使用去胶液刻蚀的方法，将光刻胶部分区域剥离，从而得到等离子体共振光栅。
4.根据权利要求1所述的同时具有光谱及偏振选择性的量子点探测器，其特征在于，所述红外量子点层通过液相化学方法合成得到，所述红外量子点层选用的材料包括碲化汞、硫化铅、硒化铅和碲化镉。
5.根据权利要求4所述的量子点探测器，其特征在于，所述红外量子点层通过旋涂、喷涂或者印刷的方式与所述等离子体共振光栅键合。
6.根据权利要求1所述的量子点探测器，其特征在于，所述顶电极的材料包括金属和导电氧化物，所述顶电极的厚度在5-10纳米，所述顶电极的透光率不低于80%。
7.根据权利要求6所述的量子点探测器，其特征在于，所述顶电极通过化学键或物理键与所述红外量子点层键合。
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| CN107275421A (zh) * | 2017-06-07 | 2017-10-20 | 华中科技大学 | 一种量子点光电探测器及其制备方法 |
| CN110797419A (zh) * | 2019-10-29 | 2020-02-14 | 华中科技大学 | 一种叉指电极结构偏振相关窄带探测器、其制备和应用 |
| CN115132925A (zh) * | 2022-06-13 | 2022-09-30 | 苏州大学 | 一种嵌套光栅结构的双极性自驱动偏振光探测器 |
| CN115911157A (zh) * | 2023-01-29 | 2023-04-04 | 电子科技大学 | 一种双模共振天线集成的ⅱ类超晶格红外探测器 |
| CN116110998A (zh) * | 2023-02-13 | 2023-05-12 | 中芯热成科技(北京)有限责任公司 | 基于量子点的红外器件及其制备方法 |
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| CN110797419A (zh) * | 2019-10-29 | 2020-02-14 | 华中科技大学 | 一种叉指电极结构偏振相关窄带探测器、其制备和应用 |
| CN115132925A (zh) * | 2022-06-13 | 2022-09-30 | 苏州大学 | 一种嵌套光栅结构的双极性自驱动偏振光探测器 |
| CN115911157A (zh) * | 2023-01-29 | 2023-04-04 | 电子科技大学 | 一种双模共振天线集成的ⅱ类超晶格红外探测器 |
| CN116110998A (zh) * | 2023-02-13 | 2023-05-12 | 中芯热成科技(北京)有限责任公司 | 基于量子点的红外器件及其制备方法 |
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