CN111739963A - 一种硅基宽光谱光电探测器的制备方法 - Google Patents
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- 239000010703 silicon Substances 0.000 title claims abstract description 72
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 70
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 70
- 238000001228 spectrum Methods 0.000 title claims abstract description 13
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000002096 quantum dot Substances 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- 238000002161 passivation Methods 0.000 claims abstract description 21
- 238000000151 deposition Methods 0.000 claims abstract description 14
- 238000004140 cleaning Methods 0.000 claims abstract description 12
- 238000000137 annealing Methods 0.000 claims abstract description 10
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000243 solution Substances 0.000 claims description 31
- 230000008569 process Effects 0.000 claims description 17
- 238000009792 diffusion process Methods 0.000 claims description 9
- 238000000231 atomic layer deposition Methods 0.000 claims description 6
- 238000006388 chemical passivation reaction Methods 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 5
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910004262 HgTe Inorganic materials 0.000 claims description 2
- 229910021543 Nickel dioxide Inorganic materials 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- 238000005259 measurement Methods 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 238000000206 photolithography Methods 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 238000002834 transmittance Methods 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 31
- 239000010410 layer Substances 0.000 description 25
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- DPKBAXPHAYBPRL-UHFFFAOYSA-M tetrabutylazanium;iodide Chemical compound [I-].CCCC[N+](CCCC)(CCCC)CCCC DPKBAXPHAYBPRL-UHFFFAOYSA-M 0.000 description 12
- 239000003446 ligand Substances 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910021418 black silicon Inorganic materials 0.000 description 3
- 239000000084 colloidal system Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- INQOMBQAUSQDDS-UHFFFAOYSA-N iodomethane Chemical compound IC INQOMBQAUSQDDS-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 229940079593 drug Drugs 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- VYMPLPIFKRHAAC-UHFFFAOYSA-N 1,2-ethanedithiol Chemical compound SCCS VYMPLPIFKRHAAC-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- OKJPEAGHQZHRQV-UHFFFAOYSA-N Triiodomethane Natural products IC(I)I OKJPEAGHQZHRQV-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000011540 sensing material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明涉及一种硅基宽光谱光电探测器的制备方法，包括：将n型掺杂硅衬底清洗；在所述n型掺杂硅衬底底侧进行掺杂，形成N+区域；在所述N+区域底侧沉积金属接触材料，然后经过退火使所述金属接触材料与对应区域的所述顶层硅反应形成金属硅化物；在所述n型掺杂硅衬底顶侧进行钝化，形成钝化层；在所述钝化层表面形成n型/p型双层量子点；在所述量子点表面形成图形化透明电极。该方法制备得到的探测器从可见光到红外光均有高探测效率，并且可以与Si基CMOS集成电路相兼容，而且不会对衬底造成污染。
Description
技术领域
本发明属于光电探测器制备领域，特别涉及一种硅基宽光谱光电探测器的制备方法。
背景技术
红外探测对环境的适应性优于可见光，可在夜间及恶劣环境下工作，且红外探测隐蔽性好，比雷达和激光探测更安全，对伪装目标识别率更高。与雷达系统相比，红外系统具有体积小、重量轻、功耗低等优点，因此在军事上红外探测可应用于红外夜视、红外制导、红外侦查等方面。红外探测技术不仅在军事方面有很多应用，通过对军事领域中的先进研究成果进行转换和工艺改进之后，红外探测器在民用领域中也有了广泛的应用，红外探测也可应用于健康监控、光通讯及三维目标识别等方面。
但是，红外探测系统由于使用区域不同、气候温度改变、目标伪装，红外诱饵释放等原因，会导致单一波段的探测系统获取信息的减弱，特别是当运动中的目标自身发生改变时，其红外辐射峰值波长将发生移动，将导致红外探器探测准确度大幅度下降甚至很可能根本无法探测到目标。为解决上述问题，可将红外光探测系统探测波长拓展至可见光范围内，实现宽波段光谱探测，目前的解决方案是采用两款芯片，即同时使用硅光电探测芯片(400-1100nm)和InGaAs光电探测芯片(900-1700nm)，但这一举措不仅增加成本、降低芯片集成度，而且在某些特殊应用如高光谱数据立方体中，分立探测器测量的光谱较难圆滑衔接。因此，将单一光探测器探测范围由可见光拓展至红外波段，实现宽波段探测具有十分重要的意义。
硅基CMOS集成电路工艺是先进半导体技术的主体，但硅材料受其禁带宽度限制，使得硅基光电探测器无法探测1100nm以上波长的光波，因此如何将红外探测集成到硅材料上是实现宽光谱传感与硅基集成电路结合的前提。为实现硅基红外集成，最初红外探测芯片是在硅基表面外延Ge或InGaAs等Ⅲ-Ⅴ族材料以拓宽该体系对光谱的吸收范围，但外延生长不仅增加了工艺的复杂性，还不可避免地会对硅衬底引入污染或掺杂。近年，黑硅被证实是一种有效的红外传感材料，黑硅制备过程中激光造成的微纳米非晶态缺陷会引入了较多的电子复合损耗，因此黑硅红外探测器探测率较低(10-2-10-1A/W)。胶体量子点是一类优异的红外及可见光吸收材料，它主要有以下几个优点：(1)具有优异的红外及可见光捕获能力并可以通过量子限制效应调节吸收截止波长；如PbS量子点的吸收波长理论值可从200nm拓宽至2400nm；(2)可通过溶液法进行合成，并用旋涂等低成本手段进行器件制作，易于和其它材料集成；(3)可通过调节其物理性能使其在常温下工作，不需要进行制冷，可以极大简化器件结构，降低成本。因此将胶体量子点与Si基衬底结合，有望制备出与现有集成电路相匹配的常温红外探测器。2015年，多伦多大学Sargent课题组利用碘甲烷钝化n型硅与p型胶体量子点界面，制备出纵向的光电探测器，获得了400-1300nm的响应，在1230nm光波长下，在0V偏压时，探测率为5×1010Jones。(Masala S,Adinolfi V,Sun J P,et al.TheSilicon:Colloidal Quantum Dot Heterojunction[J].Advanced Materials,2015,27(45):7445-7450.)
发明内容
本发明所要解决的技术问题是提供一种硅基宽光谱光电探测器的制备方法，以克服现有技术中光探测器从可见光到红外光探测效率低等缺陷。
本发明提供一种硅基宽光谱光电探测器的制备方法，包括：
(1)将n型掺杂硅衬底清洗，所述n型掺杂包括VA族元素掺杂；
(2)在所述n型掺杂硅衬底底侧进行掺杂，形成N+区域；
(3)在所述N+区域底侧沉积金属接触材料，然后经过退火使所述金属接触材料与对应区域的所述顶层硅反应形成金属硅化物；
(4)在所述n型掺杂硅衬底顶侧进行场效应钝化或者化学钝化，形成钝化层；
(5)在所述钝化层表面形成n型/p型双层量子点；
(6)在所述量子点表面形成图形化透明电极。
所述步骤(1)中衬底包括单晶硅或GeSi；n型掺杂包括P或者As元素掺杂；n型掺杂硅衬底厚度为0.1mm-1mm，电阻率为1-10Ω.cm。其中电阻率过大会使探测器响应度过低，而电阻率过小则会增大探测器的漏电流。
所述步骤(1)中清洗的方法包括：将n型掺杂硅衬底进行丙酮高温清洗、无水乙醇清洗、标准RCA工艺清洗中的至少一种，并用HF溶液(1:20(HF：H2O＝1：20的体积比)进行漂洗，去除自然氧化层。
所述步骤(2)中掺杂采用高温扩散或者离子注入的方式；掺杂的元素为VA族元素(例如P、As)。
所述高温扩散的方式为：需要在硅衬底正面生长阻挡层SiO2或Si3N4，其厚度为100nm-1000nm，扩散温度为700-1200℃，扩散时间为5min-20min。
所述离子注入的方式为：注入能量为20keV-200keV，注入剂量为5×1014cm-2到5×1016cm-2，离子注入后，需在真空环境或惰性气氛保护下，将样品加热到600℃至1100℃，保持5秒至120秒后冷却降温，使注入离子激活并且减小损伤。
所述步骤(3)中金属接触材料包括Ti、Al、Ni、Ru、Ir、Au、Pt、Co、Ag及其合金中的一种。
所述步骤(3)中沉积的方式为电子束蒸发或测控溅射。
所述步骤(3)中退火的工艺参数为：在真空环境或惰性气氛保护下，将样品到300℃至800℃，保持30秒至3分钟后冷却降温，形成欧姆接触。
所述步骤(4)中场效应钝化包括：在硅表面沉积一层氧化层ZnO，TiO2或NiO2。
所述沉积方式为化学方法、热注入法合成或溶液法旋涂。
所述化学方法为原子层沉积(ALD)、分子束外延(MBE)或化学气相沉积(CVD)。
所述沉积的厚度为1nm-30nm。
所述步骤(4)中化学钝化采用化学溶液进行处理，在硅与量子点表面引入电偶极子，所述化学溶液包括HF溶液、Br2溶液、I2溶液或有机溶液。
所述步骤(5)中量子点的材料为PbS、PbSe、HgTe、ZnO、HgCrTe中的一种或者几种。
所述步骤(5)中量子点的生长方式为原子层沉积ALD、分子束外延MBE、化学气相沉积CVD、热注入法或溶液法旋涂。
所述步骤(5)中p型量子点包括对量子点材料掺杂形成或者对溶液法形成胶体量子点进行配体交换而得。优选地，p型量子点为溶液法形成的PbS胶体量子点用EDT(1-2-乙二硫醇)进行配体交换而得。
所述步骤(5)中p型量子点厚度为20nm-100nm。
所述步骤(5)中n型量子点包括对量子点材料掺杂形成或者对溶液法形成胶体量子点进行配体交换而得。优选地，n型量子点为溶液法形成的PbS胶体量子点用TBAI(四丁基碘化铵)进行配体交换而得。
所述步骤(5)中n型厚度分别为100nm-250nm。
所述步骤(6)中图形化透明电极材料为从可见光到红外光均有高透过率的导电材料，所述导电材料包括ITO，IZO或有机导电材料。
所述步骤(6)中图形化透明电极厚度为50nm-200nm。
所述步骤(6)中图形化方法包括硬掩模、光刻剥离工艺或刻蚀工艺。
本发明提供了一种上述方法制备得到的硅基宽光谱光电探测器。
本发明还提供一种上述方法制备得到的硅基宽光谱光电探测器的应用。
本发明中n型/p型双层量子点也可以换成单层量子点，若用单层量子点，则在探测器内部相比于双层电场强度会降低，所以没有双层量子点的效率更高。
本发明硅衬底进行掺杂形成N+区域，是为了与金属形成欧姆接触，作为二极管的一个衬底。并且在硅与量子点之间提出了不同的钝化方法，可以极大提升器件效率。本发明需要顶层透明电极，透明电极目的是光可以透过透明电极入射到器件中。
本发明原理是载流子从量子点渡越到硅中，然后在硅中输运，从底电级抽取形成光电流。
有益效果
本发明主要应用在利用量子点对从可见光到红外光均有很好的吸收的优势，与硅形成异质结。并对于硅与量子点的界面进行钝化，使得光生载流子可以在器件中自由输运。制备得到的探测器从可见光到红外光均有高探测效率，并且可以与Si基CMOS集成电路相兼容，而且不会对衬底造成污染。
附图说明
图1为本发明硅基宽光谱光电探测器的制备过程示意图，其中，10为n型掺杂硅衬底，20为N+区域，30为金属硅化物，40为钝化层，50/51为n型/p型双层量子点，60为图形化透明电极。
图2为本发明实施例1中探测器在(a)0偏和(b)反偏时的外量子效率与波长关系曲线。(图中10nm是指钝化层氧化锌的厚度)
图3为本发明实施例1中探测器在反偏时的探测率与波长关系曲线。
图4为对比例1中纵向探测器的探测效率图，其中(a)为7V情况下的外量子效率，(b)为0V和7V下的探测率与响应度，(c)为探测参数的列表。
具体实施方式
下面结合具体实施例，进一步阐述本发明。应理解，这些实施例仅用于说明本发明而不用于限制本发明的范围。此外应理解，在阅读了本发明讲授的内容之后，本领域技术人员可以对本发明作各种改动或修改，这些等价形式同样落于本申请所附权利要求书所限定的范围。
硅衬底来源：苏州晶湛半导体有限公司；所用药品来源：氢氟酸：上海凌峰化学试剂有限公司；四丁基碘化铵(TBAI)：上海阿拉丁生化科技股份有限公司；1，2-乙二硫醇(EDT)：北京百灵威科技有限公司；ITO导电玻璃：武汉晶格太阳能科技公司；所有药品未进行二次提纯，均在合成过程和器件的制备过程中直接使用。
实施例1
本实施例提供了一种硅基宽光谱光电探测器的制备方法，具体步骤如下：
(1)提供n型掺杂硅衬底，该衬底为P掺杂的半导体(Si)，100晶面，选择厚度为0.5mm，电阻率1-10Ω.cm；为合适的硅衬底进行标准RCA工艺清洗，并用1：20(HF：H2O＝1：20的体积比)的HF溶液进行漂洗，去除自然氧化层；
(2)在硅衬底底侧进行掺杂P离子，掺杂浓度为5×1015cm-2，掺杂能量为20keV，形成N+区域并在1000℃下退火5s消除晶格损伤(需在真空环境或惰性气氛保护下进行)；
(3)在N+区域底侧用电子束蒸发沉积金属接触材料Al，厚度为100nm，然后经过400℃下退火(需在真空环境或惰性气氛保护下进行)30s，在硅表面使金属硅反应形成金属硅化物；
(4)在硅顶侧进行场效应钝化，通过溶液旋凃法沉积一层ZnO层，沉积的厚度为10nm，形成钝化层；
(5)在钝化层表面形成n型/p型双层量子点；其中n型量子点为溶液法形成的PbS胶体量子点用TBAI(四丁基碘化铵)进行配体交换而得，厚度为150nm，p型量子点为溶液法形成的PbS胶体量子点用EDT(1-2-乙二硫醇)进行配体交换而得，厚度为25nm；
(6)在量子点表面通过常温磁控溅射形成ITO材料，其厚度为120nm，并且通过硬掩模工艺进行图形化。
图2表明：探测器在从可见光到1600nm波长下均有好的响应，在1490nm下EQE有一个峰值，在反偏时其红外区域最高EQE为20％。
图3表明：探测器在1490nm的波长下其有ZnO场钝化其探测率为4×1011Jones。
实施例2
(1)提供n型掺杂硅衬底，该衬底包括，P掺杂的Si，100晶面，选择厚度为0.5mm，电阻率1-10Ω.cm；为合适的硅衬底进行标准RCA工艺清洗，并用1：20(HF：H2O＝1：20的体积比)的HF溶液进行漂洗，去除自然氧化层；
(2)在硅衬底正面生长通过CVD法生长阻挡层SiO2，其厚度为500nm；
(3)对硅片进行扩散，扩散温度为700℃，扩散时间为5min，扩散炉子需要用惰性气体进行保护；
(4)用1：10(HF：H2O＝1：10的体积比)的HF溶液将SiO2漂洗掉，处理时间约10分钟；
(3)在N+区域底侧用电子束蒸发沉积，金属接触材料Al，厚度为100nm，然后在真空环境或惰性气氛保护下经过400℃下退火，时间为30s，在硅表面使金属硅反应形成金属硅化物；
(4)在硅顶侧进行场效应钝化，通过溶液旋凃法沉积一层ZnO层，沉积的厚度为10nm，形成钝化层；
(5)在钝化层表面形成n型/p型双层量子点；其中n型量子点为溶液法形成的PbS胶体量子点用TBAI(四丁基碘化铵)进行配体交换而得，厚度为150nm，p型量子点为溶液法形成的PbS胶体量子点用EDT(1-2-乙二硫醇)进行配体交换而得，厚度为25nm；
(6)在量子点表面通过常温磁控溅射形成ITO材料，其厚度为120nm，并且通过硬掩模工艺进行图形化。
实施例3
(1)提供n型掺杂硅衬底，该衬底包括，P掺杂的Si，100晶面，选择厚度为0.5mm，电阻率1-10Ω.cm；为合适的硅衬底进行标准RCA工艺清洗，并用1：20(HF：H2O＝1：20的体积比)的HF溶液进行漂洗，去除自然氧化层；
(2)在硅衬底底侧进行掺杂P离子，掺杂浓度为5×1015cm-2，掺杂能量为20keV，形成N+区域并在1000℃下在真空环境或惰性气氛保护下退火5s消除晶格损伤；
(3)在N+区域底侧用电子束蒸发沉积，金属接触材料Al，厚度为100nm，然后在真空环境或惰性气氛保护下经过400℃下退火，时间为30s，在硅表面使金属硅反应形成金属硅化物；
(4)在硅顶侧进行化学钝化：将衬底置于乙醚：碘甲烷体积比为1：9的溶液中，处理时间为20分钟，并且在处理过程中用265nm紫外光照射；
(5)在表面形成n型/p型双层量子点；其中n型量子点为溶液法形成的PbS胶体量子点用TBAI(四丁基碘化铵)进行配体交换而得，厚度为100nm，p型量子点为溶液法形成的PbS胶体量子点用EDT(1-2-乙二硫醇)进行配体交换而得，厚度为50nm；
(6)在量子点表面通过常温磁控溅射形成ITO材料，其厚度为120nm，并且通过光刻剥离的方法进行图形化。
实施例2和与实施例1的效果类似，均是通过硬淹模的方式进行图形化，其透明电极的面积不可能做的很小，所以单个器件面积很大。实施例3通过光刻的方法可以进行图形化，可以减小器件面积，获得更低的暗电流与更高的探测率。
对比例1
本对比例来源于参考文献(Advanced Materials,2015,27(45):7445-7450)，制备了一种Si与胶体量子点结合的纵向探测器，其制备的流程如下：
(1)选择p型的硅衬底，掺杂浓度与厚度未知，将此衬底进行标准RCA工艺进行清洗，用氨水：过氧化氢：水体积比为1：1：5的比例在80℃下漂洗15分钟，并且用浓度为2％的HF进行漂洗；
(2)用2％的HF或者I2或者碘甲烷或者Br2钝化表面，在用碘甲烷进行处理的时候将晶圆浸入溶液中在乙醚中暴露于紫外光(254nm)下20分钟；
(3)表面形成n型量子点，PbS胶体量子点用TBAI(四丁基碘化铵)进行配体交换而得，厚度为150nm；
(4)沉积30nm AZO和200nm的ITO形成电极；
(5)用热蒸发形成Al 150nm，用硬掩模形成，并且在450℃退火15分钟。
本对比例纵向探测器的探测效率如图4所示。
参考文献(Advanced Materials,2015,27(45):7445-7450)与本发明的比较：
1.原理：本发明采用了叠层的量子点结构与硅衬底结合，整个纵向结构包括量子点之间的pn结与量子点与硅之间的异质结，有助于增加耗尽区，提高探测效率。而文献中关键部位是p型硅与n型量子点中的异质结构；
2.本发明强调可以从可见光一直拓展到近红外，甚至到2000nm，给出的实例中探测波长到1500nm，并且在小偏压下可以实现好的探测(0.25V)，而参考文献中只探测到1230nm红外光，并且需要加很高的电压才能实现高的探测率(7V)；
3.本发明采用n型硅衬底，文献中采用p型衬底；
4.本发明采用n型/p型叠层量子点结构，文献中采用n型量子点；
5.本发明为了减小肖特基势垒，进行离子注入或者热扩散，文献中没有采用；
6.本发明实例中采用场钝化的方法，文献中仅仅采用化学钝化；
7.本发明中采用光刻等图形化透明电极区域，可以将透明电极与胶体量子点接触面积变小，从而减小漏电流，文献中没有采用。
Claims (10)
1.一种硅基宽光谱光电探测器的制备方法，包括：
(1)将n型掺杂硅衬底清洗，所述n型掺杂包括VA族元素掺杂；
(2)在所述n型掺杂硅衬底底侧进行掺杂，形成N+区域；
(3)在所述N+区域底侧沉积金属接触材料，然后经过退火使所述金属接触材料与对应区域的所述顶层硅反应形成金属硅化物；
(4)在所述n型掺杂硅衬底顶侧进行场效应钝化或者化学钝化，形成钝化层；
(5)在所述钝化层表面形成n型/p型双层量子点；
(6)在所述量子点表面形成图形化透明电极。
2.根据权利要求1所述方法，其特征在于，所述步骤(1)中衬底包括单晶硅或GeSi；n型掺杂包括P或者As元素掺杂；n型掺杂硅衬底厚度为0.1mm-1mm，电阻率为1-10Ω.cm。
3.根据权利要求1所述方法，其特征在于，所述步骤(1)中清洗的方法包括：将n型掺杂硅衬底进行丙酮高温清洗、无水乙醇清洗、标准RCA工艺清洗中的至少一种，并用HF溶液进行漂洗。
4.根据权利要求1所述方法，其特征在于，所述步骤(2)中掺杂采用高温扩散或者离子注入的方式；掺杂的元素为VA族元素。
5.根据权利要求1所述方法，其特征在于，所述步骤(3)中金属接触材料包括Ti、Al、Ni、Ru、Ir、Au、Pt、Co、Ag及其合金中的一种；沉积的方式为电子束蒸发或测控溅射；退火的工艺参数为：在真空环境或惰性气氛保护下，将样品到300℃至800℃，保持30秒至3分钟后冷却降温，形成欧姆接触。
6.根据权利要求1所述方法，其特征在于，所述步骤(4)中场效应钝化包括：在硅表面沉积一层氧化层ZnO，TiO2或NiO2；化学钝化包括用HF溶液、Br2溶液、I2溶液或有机溶液进行处理，在硅与量子点表面引入电偶极子。
7.根据权利要求1所述方法，其特征在于，所述步骤(5)中量子点的材料为PbS、PbSe、HgTe、ZnO、HgCrTe中的一种或者几种；量子点的生长方式为原子层沉积ALD、分子束外延MBE、化学气相沉积CVD、热注入法或溶液法旋涂。
8.根据权利要求1所述方法，其特征在于，所述步骤(6)中图形化透明电极材料为从可见光到红外光均有高透过率的导电材料，所述导电材料包括ITO，IZO或有机导电材料；图形化透明电极厚度为50nm-200nm；图形化方法包括硬掩模、光刻剥离工艺或刻蚀工艺。
9.一种如权利要求1所述方法制备得到的硅基宽光谱光电探测器。
10.一种如权利要求1所述方法制备得到的硅基宽光谱光电探测器的应用。
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