CN107256829A - A kind of method that utilization thin film technique prepares aluminium nitride copper-clad base plate - Google Patents
A kind of method that utilization thin film technique prepares aluminium nitride copper-clad base plate Download PDFInfo
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- CN107256829A CN107256829A CN201710402844.2A CN201710402844A CN107256829A CN 107256829 A CN107256829 A CN 107256829A CN 201710402844 A CN201710402844 A CN 201710402844A CN 107256829 A CN107256829 A CN 107256829A
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- aluminium nitride
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- nitride substrate
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- 229910017083 AlN Inorganic materials 0.000 title claims abstract description 86
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims abstract description 42
- 239000010409 thin film Substances 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 61
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910052802 copper Inorganic materials 0.000 claims abstract description 53
- 239000010949 copper Substances 0.000 claims abstract description 53
- 239000001301 oxygen Substances 0.000 claims abstract description 46
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 46
- 229910000679 solder Inorganic materials 0.000 claims abstract description 29
- 238000007747 plating Methods 0.000 claims abstract description 25
- 238000005516 engineering process Methods 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 238000007789 sealing Methods 0.000 claims abstract description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000007738 vacuum evaporation Methods 0.000 claims abstract description 14
- 238000003466 welding Methods 0.000 claims abstract description 9
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 7
- 238000001035 drying Methods 0.000 claims abstract description 4
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 3
- 238000005530 etching Methods 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 12
- 239000005304 optical glass Substances 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 6
- 238000005476 soldering Methods 0.000 claims description 5
- 229910017693 AgCuTi Inorganic materials 0.000 claims description 4
- 241000784726 Lycaena thetis Species 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical class [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical class [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000001291 vacuum drying Methods 0.000 claims description 3
- 238000000643 oven drying Methods 0.000 claims description 2
- 230000004807 localization Effects 0.000 abstract description 5
- 238000009413 insulation Methods 0.000 abstract description 4
- 239000000919 ceramic Substances 0.000 description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
- 238000012827 research and development Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- XMTQQYYKAHVGBJ-UHFFFAOYSA-N 3-(3,4-DICHLOROPHENYL)-1,1-DIMETHYLUREA Chemical compound CN(C)C(=O)NC1=CC=C(Cl)C(Cl)=C1 XMTQQYYKAHVGBJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000003137 locomotive effect Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000012089 stop solution Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/4807—Ceramic parts
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a kind of method that utilization thin film technique prepares aluminium nitride copper-clad base plate, comprise the following steps：(1) the certain thickness metal sealing solder of vacuum coating technology vacuum evaporation on aluminium nitride substrate is utilized；(2) no-oxygen copper plate and aluminium nitride substrate are cleaned, it is standby after drying；(3) no-oxygen copper plate is sealed to obtained by upper step on aluminium nitride substrate；(4) no-oxygen copper plate is etched into the circuit according to design requirement；(5) in nickel plating on aluminium nitride substrate obtained by upper step, (6) print welding resistance region on the substrate obtained by upper step.The method that this prepares aluminium nitride copper-clad base plate using thin film technique is simple, and the localization of film-type aluminium nitride copper-clad base plate can be achieved；Aluminium nitride substrate has excellent thermal conductivity, insulation and high voltage withstanding characteristic；No-oxygen copper plate has high current capacity, and no-oxygen copper plate is easy to etched circuit, forms circuit substrate.
Description
Technical field
The present invention relates to welding technology field, specifically a kind of utilization thin film technique prepares the side of aluminium nitride copper-clad base plate
Method.
Background technology
It is exactly the age that external aluminium nitride, which covers copper technology to start from last century, external at present in ripe application rank
Section, is mainly used in IGBT core parts, is mainly used in the fields such as power vehicle (high ferro), electric automobile, intelligent grid.
Current IGBT major brand has, fly million (also known as fairchild is quick) Mitsubishis, Fuji, Toshiba, three societies, three cultivate, west gate
Health, Infineon, IR.IGBT is insulated gate bipolar transistor (IsolatedGateBipolarTransistor), and it is 80
It is born at the beginning of age, the NEW TYPE OF COMPOSITE power electronic devices that the nineties are developed rapidly.IGBT is by MOSFET and GTR advantage
Roll into one, existing input impedance is high, speed is fast, heat endurance is good, voltage driven type, have again low on-state voltage drop, high voltage,
The advantage of high current.
Infineon Infineon science and technology (Eupec, Infineon from semiconductor division department of Siemens it is independent after purchase one
Wholly-owned subsidiary of family, has eliminated Eupec (OPEC) this designation at present, unified to use Infineon brands, inherits
Siemens BSM series high-powers IGBT module and BU series IGBT single tubes) belonging to several families in the world has high-power at present
IGBT module researches and develops the company of strength, and current module research and development strength covers 6500V3300V1700V1200V600V voltage class,
Electric current is from 3300A-8A grades.There are traction power level high-performance module, wind-power electricity generation solar energy power generating, industrial motor driving
Module is to hybrid vehicle module.And the Cipos600V8A-22A series IPM modules that household electrical appliances are used.There is provided from MCU to mould
The one-stop solutions such as block driving application.Infineon IGBT has been currently advancing to forth generation maturation application.First generation PT types
IGBT (PunchThrough) penetrating type technology.Second generation NPT (NonPunchThrough) non-penetrating type IGBT, the third generation
Trench trench-gate technologies, forth generation Trench+Field-Stop trench gates+field termination tech, the junction temperature of silicon chip is from 125 degree
Develop into 150 degree and arrive 175 degree of forth generation again.The raising of semiconductor junction temperature, improves the power density of IGBT wafers, equal
Power density is bigger under radiating condition.The progress of technology reduces the conduction voltage drop of igbt chip, and the conducting for reducing device is damaged
Consumption.
On May 25th, 2011, South China car high-power IGBT industrialization base is laid a foundation again in Zhuzhou drop, indicates that China is first
8 inches of igbt chip production line projects of bar formally start.The project is embodied by southern car Zhuzhou, 1,400,000,000 yuan of gross investment, in advance
Meter is put into serial production for 2013.After building up, the base will be provided with producing 120000 8 inches of igbt chips per year and 1,000,000 high-power
The ability of IGBT device, annual value of production is more than 2,000,000,000 yuan.The base will build 9 in addition to chip production line, also and meet different
The IGBT module production line of industry.The grade of product meets track traffic and electric automobile, wind from 600 volts to 6500 volts
The demand of multiple industries such as power generating, solar power generation, intelligent grid, high-pressure frequency-conversion, industry transmission.Three based on southern car is big prominent
Go out advantage, making southern car, IGBT technologies are broken out of an encirclement and consolidate status of taking the lead in race in industrialization at home, and take the lead in yielding positive results：One is technology
Deposit, early in Eleventh Five-Year Plan, southern car just takes the lead in starting " development of high pressure IGBT element " project, southern car epoch in 2008 at home
Electrically (03898.HK) has purchased the equity of well-known Dynex companies of power semiconductor enterprise 75%；2010, southern car in overseas into
Vertical power semiconductor research and development centre, with the IGBT technical researches towards whole world layout.Two be product accumulation, southern car in 2009
Domestic first small lot high-power IGBT module packaging line, the high-power IGBT device of current autonomous production are established in Zhuzhou
Part manage on part subway and locomotive at home by entrucking examination, and properties of product are with external product is equal to, and three be supporting industries, southern car
Turn into global the third-largest track traffic enterprise at present, itself be exactly the user of the track traffic IGBT module of largest domestic,
The southern research and development of car Zhuzhou deep ploughing electric automobile and industrialization add up to deliver hybrid-power bus 1000 for many years, account for national section
1/7 share of energy integral new-energy passenger recoverable amount, the 1.65MW blower fans of southern car have sold 577, form annual output blower fan 1200
Ability more than platform, more than 3,000,000,000 yuan of hand-held order.
To cover copper technology immature for country's aluminium nitride at present, not yet realizes localization.Therefore, the present invention provides a kind of thin
Membranous type aluminium nitride copper-clad base plate, using advanced metal aluminum nitride technology and high temperature brazing technology, can be achieved film-type nitrogen
Change the localization of aluminium copper-clad base plate.
The content of the invention
It is an object of the invention to provide a kind of method that utilization thin film technique prepares aluminium nitride copper-clad base plate, with solution
State the problem of being proposed in background technology.
To achieve the above object, the present invention provides following technical scheme：
A kind of method that utilization thin film technique prepares aluminium nitride copper-clad base plate, comprises the following steps：
(1) the certain thickness metal sealing solder of vacuum coating technology vacuum evaporation on aluminium nitride substrate is utilized；
(2) no-oxygen copper plate and aluminium nitride substrate are cleaned, it is standby after drying；
(3) no-oxygen copper plate is sealed to obtained by upper step on aluminium nitride substrate；
(4) no-oxygen copper plate is etched into and requires pattern and decorative pattern；
(5) in nickel plating on aluminium nitride substrate obtained by upper step；
(6) welding resistance region is printed on the substrate obtained by upper step.
It is used as further scheme of the invention：The metal sealing solder is golden tin series, gold germanium series, AgCuTi series
Or the sealing-in solder of golden copper system row.
It is used as further scheme of the invention：The step (2) is using optical glass washing flow line equipment to oxygen-free copper
Plate and aluminium nitride substrate are cleaned.
It is used as further scheme of the invention：The step (1) using vacuum evaporation plating machine, steam by the vacuum on aluminium nitride substrate
Plate certain thickness metal sealing solder.
It is used as further scheme of the invention：The step (2) is cleaned to no-oxygen copper plate and aluminium nitride substrate, 45-
It is standby after being dried under 80 degrees Celsius.
It is used as further scheme of the invention：The step (3) uses atmosphere protection soldering oven or vacuum drying oven by oxygen-free copper
Plate is sealed to obtained by step on aluminium nitride substrate.
It is used as further scheme of the invention：Nickel-plating liquid is plated in above-mentioned aluminium nitride by the step (5) using ni plating apparatus
On substrate.
It is used as further scheme of the invention：The step (4) is lost no-oxygen copper plate using etching machines and etching liquid
It is carved into and requires pattern and decorative pattern.
Compared with prior art, the beneficial effects of the invention are as follows：
The method that this prepares aluminium nitride copper-clad base plate using thin film technique is simple, utilizes advanced metal aluminum nitride technology
And high temperature brazing technology, the localization of film-type aluminium nitride copper-clad base plate can be achieved；The film-type aluminium nitride of preparation covers
The various advantages that copper base set power electronics package material has：
1. aluminium nitride substrate has excellent thermal conductivity, insulation and high voltage withstanding characteristic；
2. no-oxygen copper plate has high current capacity；
3. there is higher adhesive strength and reliability between aluminium nitride substrate and no-oxygen copper plate；
4. no-oxygen copper plate is easy to etched circuit, forms circuit substrate；
5. no-oxygen copper plate has solderability, it is adaptable to which aluminium wire is bonded.
Embodiment
The technical scheme of this patent is described in more detail with reference to embodiment.
Embodiment 1
A kind of method that utilization thin film technique prepares aluminium nitride copper-clad base plate, comprises the following steps：
(1) the certain thickness metal sealing solder of vacuum evaporation plating machine vacuum evaporation on aluminium nitride substrate is utilized；Ceramics
Metallization and solder are once completed, cost-effective；
(2) no-oxygen copper plate and aluminium nitride substrate are cleaned, it is standby after being dried at 75-80 DEG C；
(3) no-oxygen copper plate is sealed to obtained by upper step on aluminium nitride substrate；
(4) no-oxygen copper plate is etched into using etching machines and etching liquid and requires pattern and decorative pattern；
(5) in nickel plating on aluminium nitride substrate obtained by upper step；Nickel-plating liquid is plated in using ni plating apparatus above-mentioned aluminum-nitride-based
On plate；
(6) welding resistance region is printed on the substrate obtained by upper step.
The metal sealing solder is the sealing-in solder of golden tin series, and the fusing point of the sealing-in solder of golden tin series is 280-
370 degree.
Wherein, step (2) is cleaned using optical glass washing flow line equipment to no-oxygen copper plate and aluminium nitride substrate.
Wherein, no-oxygen copper plate is sealed to obtained by upper step on aluminium nitride substrate by step (3) using atmosphere protection soldering oven.
Embodiment 2
A kind of method that utilization thin film technique prepares aluminium nitride copper-clad base plate, comprises the following steps：
(1) the certain thickness metal sealing solder of vacuum evaporation plating machine vacuum evaporation on aluminium nitride substrate is utilized；Ceramics
Metallization and solder are once completed, cost-effective；
(2) no-oxygen copper plate and aluminium nitride substrate are cleaned, it is standby after being dried at 60-80 DEG C；
(3) no-oxygen copper plate is sealed to obtained by upper step on aluminium nitride substrate；
(4) no-oxygen copper plate is etched into using etching machines and etching liquid and requires pattern and decorative pattern；
(5) in nickel plating on aluminium nitride substrate obtained by upper step；Nickel-plating liquid is plated in using ni plating apparatus above-mentioned aluminum-nitride-based
On plate；
(6) welding resistance region is printed on the substrate obtained by upper step.
The metal sealing solder is the sealing-in solder of gold germanium series, and the fusing point of the sealing-in solder of gold germanium series is 350-
450 degree.
Wherein, step (2) is cleaned using optical glass washing flow line equipment to no-oxygen copper plate and aluminium nitride substrate.
Wherein, no-oxygen copper plate is sealed to obtained by upper step on aluminium nitride substrate by step (3) using vacuum drying oven.
Embodiment 3
A kind of method that utilization thin film technique prepares aluminium nitride copper-clad base plate, comprises the following steps：
(1) the certain thickness metal sealing solder of vacuum evaporation plating machine vacuum evaporation on aluminium nitride substrate is utilized；Ceramics
Metallization and solder are once completed, cost-effective；
(2) no-oxygen copper plate and aluminium nitride substrate are cleaned, it is standby after being dried at 45-65 DEG C；
(3) no-oxygen copper plate is sealed to obtained by upper step on aluminium nitride substrate；
(4) no-oxygen copper plate is etched into using etching machines and etching liquid and requires pattern and decorative pattern；
(5) in nickel plating on aluminium nitride substrate obtained by upper step；Nickel-plating liquid is plated in using ni plating apparatus above-mentioned aluminum-nitride-based
On plate；
(6) welding resistance region is printed on the substrate obtained by upper step.
The metal sealing solder is the sealing-in solder of AgCuTi series, and the fusing point of the sealing-in solder of AgCuTi series is
680-780 degree.
Wherein, step (2) is cleaned using optical glass washing flow line equipment to no-oxygen copper plate and aluminium nitride substrate.
Wherein, no-oxygen copper plate is sealed to obtained by upper step on aluminium nitride substrate by step (3) using atmosphere protection soldering oven.
Embodiment 4
A kind of method that utilization thin film technique prepares aluminium nitride copper-clad base plate, comprises the following steps：
(1) the certain thickness metal sealing solder of vacuum evaporation plating machine vacuum evaporation on aluminium nitride substrate is utilized；Ceramics
Metallization and solder are once completed, cost-effective；
(2) no-oxygen copper plate and aluminium nitride substrate are cleaned, it is standby after drying at room temperature；
(3) no-oxygen copper plate is sealed to obtained by upper step on aluminium nitride substrate；
(4) no-oxygen copper plate is etched into using etching machines and etching liquid and requires pattern and decorative pattern；
(5) in nickel plating on aluminium nitride substrate obtained by upper step；Nickel-plating liquid is plated in using ni plating apparatus above-mentioned aluminum-nitride-based
On plate；
(6) welding resistance region is printed on the substrate obtained by upper step.
The metal sealing solder is the sealing-in solder of golden copper system row, and the fusing point of the sealing-in solder of golden copper system row is 900-
1000 degree.
Wherein, step (2) is cleaned using optical glass washing flow line equipment to no-oxygen copper plate and aluminium nitride substrate.
Wherein, no-oxygen copper plate is sealed to obtained by upper step on aluminium nitride substrate by step (3) using atmosphere protection soldering oven.
The present invention operation principle be：The aluminium nitride ceramics of highly thermally conductive, high insulation is metallized first, then in certain ring
The no-oxygen copper plate of high conductance is welded on aluminium nitride ceramics in border, a kind of composition metal aluminium nitride ceramics base formed by
Plate, it both has the characteristics such as high electrical insulating properties, high mechanical properties, the low-thermal-expansion of ceramics, while the height that aluminium nitride ceramics has again
Thermal conductivity, and anaerobic copper metal has high conductivity and excellent welding performance, and can be etched as PCB various
The figure of shape, is the Primary Component of field of power electronics power model (IGBT) encapsulation connection chip and heat dissipation base.
Experimental example
Testing result, which is shown in Table 1, to be detected to film-type aluminium nitride copper-clad base plate prepared by the embodiment of the present invention 3：
The film-type aluminium nitride copper-clad base plate testing result of table 1
The method that this prepares aluminium nitride copper-clad base plate using thin film technique is simple, utilizes advanced metal aluminum nitride technology
And high temperature brazing technology, the localization of film-type aluminium nitride copper-clad base plate can be achieved；The film-type aluminium nitride of preparation covers
The various advantages that copper base set power electronics package material has：
1. aluminium nitride substrate has excellent thermal conductivity, insulation and high voltage withstanding characteristic；
2. no-oxygen copper plate has high current capacity；
3. there is higher adhesive strength and reliability between aluminium nitride substrate and no-oxygen copper plate；
4. no-oxygen copper plate is easy to etched circuit, forms circuit substrate；
5. no-oxygen copper plate has solderability, it is adaptable to which aluminium wire is bonded.
The better embodiment to this patent is explained in detail above, but this patent is not limited to above-mentioned embodiment party
, can also be on the premise of this patent objective not be departed from formula, the knowledge that one skilled in the relevant art possesses
Make a variety of changes.
Claims (8)
1. a kind of method that utilization thin film technique prepares aluminium nitride copper-clad base plate, it is characterised in that comprise the following steps：
(1) the certain thickness metal sealing solder of vacuum coating technology vacuum evaporation on aluminium nitride substrate is utilized；
(2) no-oxygen copper plate and aluminium nitride substrate are cleaned, it is standby after drying；
(3) no-oxygen copper plate is sealed to obtained by upper step on aluminium nitride substrate；
(4) no-oxygen copper plate is etched into and requires pattern and decorative pattern；
(5) in nickel plating on aluminium nitride substrate obtained by upper step；
(6) welding resistance region is printed on the substrate obtained by upper step.
2. the method that utilization thin film technique according to claim 1 prepares aluminium nitride copper-clad base plate, it is characterised in that described
Metal sealing solder is the sealing-in solder of golden tin series, gold germanium series, AgCuTi series or golden copper system row.
3. the method that utilization thin film technique according to claim 1 prepares aluminium nitride copper-clad base plate, it is characterised in that described
Step (2) is cleaned using optical glass washing flow line equipment to no-oxygen copper plate and aluminium nitride substrate.
4. the method that utilization thin film technique according to claim 1 prepares aluminium nitride copper-clad base plate, it is characterised in that described
Step (1) utilizes the certain thickness metal sealing solder of vacuum evaporation plating machine vacuum evaporation on aluminium nitride substrate.
5. the method that utilization thin film technique according to claim 1 prepares aluminium nitride copper-clad base plate, it is characterised in that described
Step (2) is cleaned to no-oxygen copper plate and aluminium nitride substrate, standby after being dried under 45-80 degrees Celsius.
6. the method that utilization thin film technique according to claim 1 prepares aluminium nitride copper-clad base plate, it is characterised in that described
No-oxygen copper plate is sealed to obtained by upper step on aluminium nitride substrate by step (3) using atmosphere protection soldering oven or vacuum drying oven.
7. the method that utilization thin film technique according to claim 1 prepares aluminium nitride copper-clad base plate, it is characterised in that described
Nickel-plating liquid is plated on above-mentioned aluminium nitride substrate by step (5) using ni plating apparatus.
8. the method that utilization thin film technique according to claim 1 prepares aluminium nitride copper-clad base plate, it is characterised in that described
No-oxygen copper plate is etched into by step (4) using etching machines and etching liquid requires pattern and decorative pattern.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115338496A (en) * | 2022-09-19 | 2022-11-15 | 陕西智拓固相增材制造技术有限公司 | Brazing method for evaporating preset brazing filler metal |
| CN115446407A (en) * | 2022-09-02 | 2022-12-09 | 中国航发北京航空材料研究院 | Brazing method of high-volume-fraction SiCp/Al-based composite material and AlN ceramic |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002373960A (en) * | 2001-06-14 | 2002-12-26 | Tokuyama Corp | Element bonding substrate and its forming method |
| CN101764121A (en) * | 2010-01-08 | 2010-06-30 | 湖南大学 | Interlayer insulated stacked composite material and preparation method thereof |
| CN104409425A (en) * | 2014-11-13 | 2015-03-11 | 河北中瓷电子科技有限公司 | High-thermal-conductivity silicon nitride ceramic copper-clad plate and manufacturing method thereof |
-
2017
- 2017-06-01 CN CN201710402844.2A patent/CN107256829A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002373960A (en) * | 2001-06-14 | 2002-12-26 | Tokuyama Corp | Element bonding substrate and its forming method |
| CN101764121A (en) * | 2010-01-08 | 2010-06-30 | 湖南大学 | Interlayer insulated stacked composite material and preparation method thereof |
| CN104409425A (en) * | 2014-11-13 | 2015-03-11 | 河北中瓷电子科技有限公司 | High-thermal-conductivity silicon nitride ceramic copper-clad plate and manufacturing method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115446407A (en) * | 2022-09-02 | 2022-12-09 | 中国航发北京航空材料研究院 | Brazing method of high-volume-fraction SiCp/Al-based composite material and AlN ceramic |
| CN115338496A (en) * | 2022-09-19 | 2022-11-15 | 陕西智拓固相增材制造技术有限公司 | Brazing method for evaporating preset brazing filler metal |
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Application publication date: 20171017 |