CN107240566B - 液处理装置 - Google Patents
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- CN107240566B CN107240566B CN201710145062.5A CN201710145062A CN107240566B CN 107240566 B CN107240566 B CN 107240566B CN 201710145062 A CN201710145062 A CN 201710145062A CN 107240566 B CN107240566 B CN 107240566B
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- B—PERFORMING OPERATIONS; TRANSPORTING
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Abstract
本发明提供一种液处理装置,精度良好地放置基板、同时减少基板的下表面上的液体残留。实施方式的液处理装置具备倾斜部、多个支承构件、处理液供给部以及旋转机构。倾斜部配置于基板的下方,具有从基板的外侧朝向基板的内侧下倾且沿着基板的周向延伸的倾斜面。多个支承构件相对于倾斜面突出地设置,从下方支承基板。处理液供给部向支承到多个支承构件的基板的上表面供给处理液。旋转机构使倾斜部旋转。另外,多个支承构件具有从基板的外侧朝向基板的内侧延伸的细长形状。
Description
技术领域
本申请的实施方式涉及液处理装置。
背景技术
以往,作为对半导体晶圆、玻璃基板等基板进行液处理的液处理装置,公知有单张式的液处理装置。单张式的液处理装置具备:基板保持部,其保持例如基板的外周部而使基板旋转;供给部,其向保持于基板保持部的基板的上表面供给处理液。
在这样的液处理装置中,期望的是减少已供给到基板的上表面的处理液向下表面的蔓延。因此,近年来,提出了一种液处理装置,在该液处理装置中,使基板支承于沿着基板的周向延伸的倾斜面而使基板的下表面与倾斜面在基板的大致整周上接触,从而抑制处理液从基板的上表面向下表面蔓延。
然而,在基板翘曲了的情况下,在基板与倾斜面之间产生微小的间隙,处理液有可能从该间隙向基板的下表面侧蔓延。因此,在上述的液处理装置中,存在在处理后的基板的下表面周缘部产生液体残留的情况。
另一方面,在专利文献1中公开了一种液处理装置,其中,在倾斜面设置有多个球面状的支承构件,使用该支承构件来支承基板。具体而言,球面状的支承构件以支承基板的下表面上的、距外周缘的距离为1mm~2mm的靠中心侧的位置的方式配置。
现有技术文献
专利文献
专利文献1:日本特开2010-93190号公报
发明内容
发明要解决的问题
然而,在专利文献1所记载的构造中,在以例如基板的图案形成面为下表面来进行液处理的情况下,也有可能无法精度良好地放置基板、引起支承构件与图案形成面之间的干涉。
实施方式的一技术方案的目的在于提供一种能够精度良好地放置基板、同时减少基板的下表面上的液体残留的液处理装置。
用于解决问题的方案
实施方式的一技术方案的液处理装置具备倾斜部、多个支承构件、处理液供给部以及旋转机构。倾斜部配置于基板的下方,具有从基板的外侧朝向基板的内侧下倾且沿着基板的周向延伸的倾斜面。多个支承构件相对于倾斜面突出地设置,从下方支承基板。处理液供给部向支承到多个支承构件的基板的上表面供给处理液。旋转机构使倾斜部旋转。另外,多个支承构件具有从基板的外侧朝向基板的内侧延伸的细长形状。
发明的效果
根据实施方式的一技术方案,能够精度良好地放置基板、同时减少基板的下表面上的液体残留。
附图说明
图1是表示本实施方式的基板处理系统的概略结构的图。
图2是用于说明处理单元的结构的图。
图3是把持部和升降销的动作说明图。
图4是旋转板的立体图。
图5是旋转板的俯视图。
图6是图5中的A-A线剖视图。
图7是图5中的H1部的放大图。
图8是图7中的B-B线向视剖视图。
图9是图5中的H2部的放大图。
图10是图9中的C-C线向视剖视图。
图11是图9中的D-D线向视剖视图。
图12是将本实施方式的旋转板的与晶圆接触的接触部分放大的示意剖视图。
图13是表示第1变形例的干燥促进处理的动作例的图。
图14是表示第2变形例的干燥促进处理的动作例的图。
图15是表示第2变形例的干燥促进处理的动作例的图。
图16是表示第3变形例的整流板的结构的图。
图17是表示第4变形例的支承构件的结构的图。
附图标记说明
W、晶圆;16、处理单元;23、晶圆保持旋转部;23P、旋转板;61、第1平坦部;62、倾斜部;63、第2平坦部;64、第1缺口部;65、第2缺口部;66、支承构件;67、垫高部。
具体实施方式
以下,参照附图,详细地说明本申请所公开的液处理装置的实施方式。此外,本发明并不被以下所示的实施方式限定。
图1是表示本实施方式的基板处理系统的概略结构的图。以下,为了使位置关系清楚,对互相正交的X轴、Y轴及Z轴进行规定,将Z轴正方向设为铅垂朝上方向。
如图1所示,基板处理系统1包括输入输出站2和处理站3。输入输出站2和处理站3相邻地设置。
输入输出站2包括承载件载置部11和输送部12。在承载件载置部11上可载置多个承载件C,该多个承载件C用于将多张基板、在本实施方式中为半导体晶圆(以下称作晶圆W)以水平状态收纳。
输送部2与承载件载置部11相邻地设置,在输送部12的内部具有基板输送装置13和交接部14。基板输送装置13具有用于保持晶圆W的晶圆保持机构。另外,基板输送装置13能够在水平方向和铅垂方向上移动并以铅垂轴线为中心进行旋转,其使用晶圆保持机构在承载件C与交接部14之间输送晶圆W。
处理站3与输送部12相邻地设置。处理站3包括输送部15和多个处理单元16。多个处理单元16以排列在输送部15的两侧的方式设置。
输送部15在内部具有基板输送装置17。基板输送装置17具有用于保持晶圆W的晶圆保持机构。另外,基板输送装置17能够在水平方向和铅垂方向上移动并以铅垂轴线为中心进行旋转,其使用晶圆保持机构在交接部14与处理单元16之间输送晶圆W。
处理单元16用于对由基板输送装置17输送过来的晶圆W进行预先设定的基板处理。
另外,基板处理系统1包括控制装置4。控制装置4例如是计算机,其包括控制部18和存储部19。在存储部19中存储有用于对在基板处理系统1中执行的各种处理进行控制的程序。控制部18通过读取并执行被存储在存储部19中的程序来控制基板处理系统1的动作。
此外,该程序既可以是存储在可由计算机读取的存储介质中的程序,也可以是从该存储介质安装到控制装置4的存储部19中的程序。作为可由计算机读取的存储介质,存在例如硬盘(HD)、软盘(FD)、光盘(CD)、光磁盘(MO)以及存储卡等。
在如所述那样构成的基板处理系统1中,首先,输入输出站2的基板输送装置13将晶圆W自载置于承载件载置部11的承载件C取出,并将取出后的晶圆W载置于交接部14。利用处理站3的基板输送装置17将被载置于交接部14的晶圆W自交接部14取出并将其输入到处理单元16中。
在利用处理单元16对被输入到处理单元16中的晶圆W进行处理之后,利用基板输送装置17将该晶圆W自处理单元16输出并将其载置于交接部14。然后,利用基板输送装置13将载置于交接部14的处理完成后的晶圆W返回到载置部11的承载件C。
<处理单元的结构>
接着,参照图2说明处理单元16的结构。图2是用于说明处理单元16的结构的图。
如图2所示,处理单元16具备:大致方形的壳体21;大致圆筒形状的杯部22,其设置于壳体21内的大致中央部,上表面开口;晶圆保持旋转部23,其配置于杯部22的内侧,能够保持晶圆W并且使晶圆W旋转;刷子24,其向保持于晶圆保持旋转部23的晶圆W供给处理液,并且与晶圆W的上表面接触而对晶圆W的上表面进行清洗。
在壳体21,形成有用于利用基板输送装置17(参照图1)将晶圆W相对于壳体21输入输出的未图示的输送口。在输送口设置有未图示的开闭器,在输入输出时,开闭器打开,在处理时开闭器关闭,输送口关闭。
杯部22接住向晶圆W供给的处理液,从未图示的排出通路排出处理液。
晶圆保持旋转部23具有:旋转轴23S,其与配置于壳体21的下方的马达M连接而旋转;旋转板23P,其下表面的大致中央部安装于旋转轴23S。此外,马达M和旋转轴23S相当于“旋转机构”的一个例子。
在旋转轴23S形成有贯通该旋转轴23S的中央部的导管23C。导管23C经由阀等流量调整机构25与N2气体供给源26连接。在晶圆保持旋转部23的旋转板23P与由晶圆保持旋转部23保持的晶圆W之间形成有空间,通过了导管23C的N2气体从导管23C的上端向该空间流出,朝向外周流动。若晶圆保持旋转部23和晶圆W旋转,则旋转板23P与晶圆W之间的空间相比于晶圆W上方的空间成为负压。这样一来,晶圆W的中心部挠曲,晶圆W的上表面的平坦性恶化,另外,液处理的均匀性也可能恶化。不过,向该空间供给了N2气体,因此,可抑制晶圆W的中心部的挠曲。另外,N2气体从旋转板23P与晶圆W之间的空间吹出,因此,可获得减少向晶圆W的上表面供给的处理液附着于下表面的效果。
此外,从导管23C供给的气体并不限于N2气体,也可以是氩气等其他非活性气体、干燥空气等。导管23C、流量调整机构25以及N2气体供给源26相当于气体供给部的一个例子。
刷子24由可在水平面内转动且可上下运动的臂24A支承。在臂24A内形成有供向晶圆W供给的处理液流动的导管24C。导管24C经由阀等流量调整机构27与处理液供给源28连接。臂24A转动并下降,刷子24与晶圆W的上表面接触的同时(或稍靠前)、来自处理液供给源28的处理液(例如脱离子水)在导管24C内流动,从设置于刷子24的基端的开口24B向晶圆W的上表面供给。由此,通过刷子24与晶圆W的上表面接触,对晶圆W的上表面进行清洗,并且,能够利用处理液对由刷子24去除了的微粒、残留物等进行冲洗。
在本实施方式中,晶圆W以使图案形成面朝向下方的状态被把持部23G把持,利用刷子24对与图案形成面相反的一侧的面进行处理。
此外,在此,设为处理单元16具备刷子24,但也可以是,处理单元16还具备向晶圆W的上表面喷出处理液的喷嘴。
旋转板23P是具有圆板形状的构件,配置于晶圆W的下方。在旋转板23P的周缘部设置有多个(图2中,仅图示1个)把持部23G,多个把持部23G通过按压晶圆W的周缘部来从侧方把持晶圆W。
各把持部23G具有:杆构件23L,其可绕转动轴23T转动;把持片23A,其通过随着杆构件23L的转动而转动,从而能够与晶圆W的周缘部接触。在各杆构件23L的下方设置有可与杆构件23L的一端抵接的顶板41。顶板41沿着水平方向延伸,在铅垂方向上被围坐的多个支柱构件42从下方支承。多个支柱构件42被沿着水平方向延伸的臂构件43从下方支承,臂构件43利用升降机构44进行上下运动。
另外,在旋转板23P的周缘部设置有多个(图2中仅图示1个)升降销23H,该升降销23H在与基板输送装置17(参照图1)之间进行晶圆W的交接之际、从下方支承晶圆W的周缘部而使晶圆W上下运动。升降销23H沿着铅垂方向延伸,被沿着水平方向延伸的臂构件51支承。臂构件51利用升降机构52进行上下运动。
在此,参照图3说明上述的把持部23G和升降销23H的动作。图3是把持部23G和升降销23H的动作说明图。
如图3所示,在晶圆W的输入时,顶板41利用升降机构44向上方移动,将把持部23G的杆构件23L的一端向上方顶起。因此,设置于杆构件23L的另一端的把持片23A向外方倾斜。另外,在晶圆W的输入时,升降销23H利用升降机构52向上方移动,成为配置于比旋转板23P高的位置的状态。
输入到壳体21的晶圆W从基板输送装置17向升降销23H交接。之后,若升降销23H下降到预定位置,则顶板41下降。由此,顶板41与杆构件23L之间的接触状态被解除,杆构件23L以转动轴23T为中心转动,与此相伴把持片23A按压于晶圆W的周缘部。通过多个把持部23G的把持片23A按压晶圆W的周缘部,晶圆W被把持。在该状态下,若马达M旋转,则旋转板23P和安装到旋转板23P的把持部23G旋转,在旋转板23P上被把持部23G把持着的晶圆W旋转。
<旋转板的结构>
接着,使用图4和图5说明旋转板23P的结构。图4是旋转板23P的立体图,图5是旋转板23P的俯视图。
如图4和图5所示,旋转板23P具备第1平坦部61、倾斜部62以及第2平坦部63。
第1平坦部61具有直径比晶圆W的直径小的圆板形状。在第1平坦部61的中央部,设置有用于向晶圆W的下表面供给N2气体的开口部61a。
倾斜部62与第1平坦部61的外周缘连接地配置。倾斜部62具有比晶圆W的直径大的直径,并具有从晶圆W的外侧(第2平坦部63)朝向晶圆W的内侧(第1平坦部61)下倾的倾斜面。该倾斜面沿着晶圆W的周向延伸。具体而言,倾斜部62的倾斜面设置于第1平坦部61的外周缘的整周上。第2平坦部63具有与倾斜部62的外周缘连接的平坦面。
另外,旋转板23P具备多个第1缺口部64、多个第2缺口部65、多个支承构件66以及多个垫高部67。
多个第1缺口部64是将旋转板23P的外周缘中的与多个把持片23A相对应的各部分朝向径向内侧去除而成的。第1缺口部64到达倾斜部62的倾斜面的中途部。把持部23G的把持片23A可配置于该第1缺口部64。
多个第2缺口部65是将旋转板23P的外周缘中的与多个升降销23H相对应的各部分朝向径向内侧去除而成的。第2缺口部65比第1缺口部64大,到达倾斜部62的倾斜面的下部。升降销23H经由该第2缺口部65进行上下运动。
此外,在本实施方式中,示出了3个第1缺口部64和3个第2缺口部65在旋转板23P的外周部上隔开预定的间隔而交替地配置的情况的例子,但多个第1缺口部64和第2缺口部65的个数、配置并不限定于上述的例子。
多个支承构件66相对于倾斜部62的倾斜面突出地设置,从下方支承晶圆W的周缘部。该支承构件66具有从晶圆W的外侧朝向内侧、具体而言沿着第1平坦部61(换言之,晶圆W)的径向延伸的细长形状。
在此,参照图6说明支承构件66的结构。图6是图5中的A-A线剖视图。
如图6所示,支承构件66具有以与倾斜部62的倾斜面62a相同的角度倾斜的倾斜面66a,在该倾斜面66a处支承晶圆W。支承构件66的倾斜面66a相对于倾斜部62的倾斜面62a的突出高度d1设定成可防止微粒从晶圆W的上表面侧进入且将蔓延到晶圆W的下表面的处理液适度地排出的高度。例如,在从旋转板23P的底面(第1平坦部61的上表面)到平坦面63a的高度是5mm时,突出高度d1设定成0.3mm左右的高度。
另外,支承构件66具有倾斜面66a和与第2平坦部63的平坦面63a连接的平坦面66b。平坦面66b设置于与第2平坦部63的平坦面63a相同的高度。
图7是图5中的H1部的放大图。另外,图8是图7中的B-B线向视剖视图。如图7和图8所示,多个支承构件66中的两个与第1缺口部64相邻地配置于第1缺口部64的周向两侧。
图9是图5中的H2部的放大图。另外,图10是图9中的C-C线向视剖视图,图11是图9中的D-D线向视剖视图。
如图9和图10所示,多个支承构件66中的两个也与第2缺口部65相邻地配置于第2缺口部65的周向两侧。
另外,如图9和图11所示,在旋转板23P的比第2缺口部65靠径向内侧的位置设置有对倾斜部62的倾斜面62a的一部分和第1平坦部61的平坦面61b的一部分进行垫高的垫高部67。
垫高部67与第2缺口部65和设置于第2缺口部65的两侧的两个支承构件66连接。具体而言,垫高部67具有:平坦面67a,其与设置于第2缺口部65的两侧的两个支承构件66的各倾斜面66a连接;倾斜面67b,其与平坦面67a和第1平坦部61的平坦面61b连接。
垫高部67中的平坦面67a的相对于第1平坦部61的平坦面61b的垫高高度d2设定成平坦面67a不与晶圆W的下表面接触的高度。具体而言,垫高部67的平坦面67a的外周缘位于比晶圆W的外周缘靠径向内侧的位置,晶圆W在比垫高部67的平坦面67a高的位置处支承于支承构件66的倾斜面66a。
<支承构件的作用>
接着,说明上述的支承构件66的作用。图12是将本实施方式的旋转板23P的与晶圆W接触的接触部分放大的示意剖视图。
假设,使晶圆W与倾斜部62的倾斜面62a接触而直接支承,利用倾斜面堵塞从晶圆W的上表面侧到下表面侧的路径。通过设为该结构,可获得抑制处理液L向晶圆W的下表面侧蔓延的效果。然而,在晶圆W翘曲了的情况下,处理液有可能从在晶圆W与倾斜面之间产生的微小的间隙向晶圆W的下表面侧蔓延。
处理单元在使用处理液来对晶圆W进行了处理之后、进行使晶圆W高速旋转而利用离心力将残存于晶圆W的处理液去除的干燥处理。然而,蔓延到晶圆W的下表面侧的处理液难以从由于晶圆W的翘曲而产生的微小的间隙排出,易于残存于晶圆W的下表面侧。因而,在以往的液处理装置中,有可能在处理后的晶圆W的下表面周缘部产生液体残留。
与此相对,在本实施方式的处理单元16中,如图12所示,使晶圆W支承于从倾斜部62的倾斜面62a突出地设置的倾斜面66a。由此,在晶圆W与倾斜面62a之间设置有恒定的间隙,因此,能够利用倾斜部62一定程度地防止处理液L向晶圆W的下表面侧的蔓延、并且利用随着晶圆W的旋转而产生的离心力和N2气体的作用将蔓延到晶圆W的下表面侧的处理液L从该间隙向晶圆W的外方效率良好地排出。
另外,本实施方式的支承构件66具有从晶圆W的外侧朝向内侧延伸的细长形状,因此,在局部上观察时,利用细长形状的平面以点接触支承晶圆W的下表面周缘部的曲面。因而,即使是在如本实施方式那样晶圆W的图案形成面朝向下面的情况下,也能够以与没有形成图案的部分即晶圆W的下表面周缘部接触的方式使晶圆W精度良好地放置于支承构件66。因而,能够以简单的结构防止例如图案形成面与支承构件66之间的干涉等不良情况。
因而,根据本实施方式的处理单元16,能够精度良好地放置晶圆W、并且减少晶圆W的下表面上的液体残留。
另外,若仅设置支承构件66,则在第1缺口部64和第2缺口部65的周边,与晶圆W之间的间隙有可能变大到所需以上。在该情况下,从导管23C(参照图2)向晶圆W的下表面供给的N2气体的流速在第1缺口部64和第2缺口部65的周边相比于其他部分变低,微粒易于从第1缺口部64和第2缺口部65的周边等进入。
因此,在本实施方式的处理单元16中,将两个支承构件66分别配置于第1缺口部64的周向两侧和第2缺口部65的周向两侧。由此,第1缺口部64的周边和第2缺口部65的周边的N2气体的流速的降低受到抑制,因此,能够抑制微粒等从第1缺口部64的周边和第2缺口部65的周边进入。
另外,第2缺口部65形成得比第1缺口部64大,因此,存在第2缺口部65的周边的N2气体的流速的降低相比于第1缺口部64的周边的N2气体的流速的降低变大的可能性。因此,在本实施方式的处理单元16中,利用垫高部67对位于比第2缺口部65靠径向内侧的部分进行垫高。由此,位于比第2缺口部65靠径向内侧的部分处的与晶圆W之间的间隙变小,因此,能够进一步抑制第2缺口部65的周边的N2气体的流速的降低。
<变形例>
接着,说明本实施方式的处理单元16的变形例。首先,参照图13说明第1变形例。图13是表示第1变形例的干燥促进处理的动作例的图。
如图13所示,也可以是,处理单元16在使用升降销23H而使晶圆W自支承构件66分离开的状态下向晶圆W的下表面供给N2气体来促进在晶圆W的下表面残存的处理液的干燥。
具体而言,控制部18(参照图1)在使用刷子24(处理液供给部的一个例子)来对晶圆W进行了处理之后,使晶圆W高速旋转而将残存于晶圆W的上表面的处理液去除。接着,控制部18在使晶圆W的旋转停止之后,使用多个升降销23H而使晶圆W自多个支承构件66分离开,在该状态下,从导管23C(参照图2)向晶圆W的下表面供给N2气体。
通过如此设置,能够效率更良好地排出在晶圆W的下表面残存的处理液。因而,能够进一步减少晶圆W的下表面的液体残留。
此外,控制部18包括具有CPU(中央处理单元,Central Processing Unit)、ROM(只读存储器,Read Only Memory)、RAM(随机存取存储器,Random AccessMemory)、输入输出接口等的微型计算机、各种电路。该微型计算机的CPU通过将存储到ROM的程序读出并执行,实现后述的控制。另外,存储部19可利用例如RAM、闪存(Flash Memory)等半导体存储器元件、或、硬盘、光盘等存储装置实现。
接着,参照图14和图15说明第2变形例。图14和图15是表示第2变形例的干燥促进处理的动作例的图。
如图14所示,也可以是,在控制部18在上述的干燥促进处理中使升降销23H上升的情况下,以比在与基板输送装置17之间进行晶圆W交接的情况下使升降销23H上升的速度快的速度使升降销23H上升。这样,通过使升降销23H高速上升,蔓延到晶圆W的下表面侧的处理液L分离成残存于晶圆W的下表面的处理液L和残存于倾斜部62的倾斜面62a或支承构件66的倾斜面66a的处理液L。由此,与使升降销23H以通常的速度上升了的情况相比较,能够减少残存于晶圆W的下表面的处理液L的量。
之后,在控制部18使升降销23H下降而使晶圆W接近了支承构件66之后,从导管23C(参照图2)相对于晶圆W的下表面供给N2气体。这样,通过使升降销23H下降而使晶圆W与倾斜部62之间的间隙变窄,与在图14的状态下供给N2气体的情况相比较,抑制了N2气体的流速的降低,因此,能够从晶圆W的下表面效率良好地去除处理液L。
接着,参照图16说明第3变形例。图16是表示第3变形例的整流板的结构的图。此外,在图16中,为了容易理解,适当省略把持部23G、顶板41等地表示。
如图16所示,处理单元16也可以具备整流板29。整流板29在杯部22的内部设置于比旋转板23P靠下方的位置。整流板29具备配置于旋转板23P与杯部22之间的周壁部29a、以及将周壁部29a固定于杯部22的固定部29b。周壁部29a具有沿着杯部22的内壁的形状。
通过具备该整流板29,能够抑制从杯部22的外侧朝向内侧的气流在杯部22内紊乱(卷起)。因此,能够效率良好地进行壳体21内部的排气。
接着,参照图17说明第4变形例。图17是表示第4变形例的支承构件66的结构的图。
在上述的实施方式中,对多个支承构件66沿着晶圆W的(换言之,第1平坦部61的)径向延伸的情况的例子进行了说明,但是,如图17所示,多个支承构件66也可以具有使径向外侧的端部(即第2平坦部63侧的端部)比径向内侧的端部(即第1平坦部61侧的端部)向晶圆W的旋转方向后方侧偏移而成的形状。由此,能够将蔓延到晶圆W的下表面侧的处理液沿着支承构件66的侧面效率良好地排出。
如上述那样,实施方式的液处理装置具备倾斜部、多个支承构件、处理液供给部以及旋转机构。倾斜部配置于基板的下方,具有从基板的外侧朝向基板的内侧下倾且沿着基板的周向延伸的倾斜面。多个支承构件相对于倾斜面突出地设置,从下方支承基板。处理液供给部向支承到多个支承构件的基板的上表面供给处理液。旋转机构使倾斜部旋转。另外,多个支承构件具有从基板的外侧朝向基板的内侧延伸的细长形状。
因而,根据实施方式的处理单元16,能够防止与图案形成面之间的干涉、并且减少基板的下表面上的液体残留。
此外,在上述的实施方式中,作为处理液供给部的一个例子,列举具备用于喷出处理液的开口24B的刷子24而进行了说明,但处理液供给部并不限定于刷子24,也可以是喷出处理液的喷嘴。处理单元16未必需要具备刷子24。
进一步的效果、变形例能够由本领域技术人员容易地导出。因此,本发明的更广泛的形态并不限定于如以上那样表述且叙述的特定的详细和代表性的实施方式。因而,不脱离由权利要求书及其等效物定义的总结性的发明的概念的精神或范围,可进行各种变更。
Claims (14)
1.一种液处理装置,其特征在于,
该液处理装置具备:
倾斜部,其配置于基板的下方,具有从所述基板的外侧朝向所述基板的内侧下倾且沿着所述基板的周向延伸的倾斜面;
多个支承构件,其相对于所述倾斜面突出地设置,从下方支承所述基板;
处理液供给部,其向支承到所述多个支承构件的所述基板的上表面供给处理液;
以及旋转机构,其使所述倾斜部旋转,
所述多个支承构件具有从所述基板的外侧朝向所述基板的内侧延伸的细长形状,
该液处理装置具备从侧方把持所述基板的多个把持部,
所述倾斜部具备将所述倾斜面的外周缘中的与所述多个把持部相对应的各部分去除而成的多个第1缺口部,
在所述第1缺口部的两侧设置有所述多个支承构件中的两个。
2.根据权利要求1所述的液处理装置,其特征在于,
该液处理装置具备使所述基板向上方抬起而使所述基板自所述多个支承构件分离开的多个升降销,
所述倾斜部具备将所述倾斜面的外周缘中的与所述多个升降销相对应的各部分去除而成的多个第2缺口部,
在所述第2缺口部的两侧设置有所述多个支承构件中的两个。
3.根据权利要求2所述的液处理装置,其特征在于,
所述倾斜部具备垫高部,该垫高部与所述第2缺口部和设置于所述第2缺口部的两侧的两个所述支承构件连接,对位于比所述第2缺口部靠径向内侧的位置的部分进行垫高。
4.根据权利要求1或2所述的液处理装置,其特征在于,
所述多个支承构件沿着所述基板的径向延伸。
5.根据权利要求1或2的液处理装置,其特征在于,
所述多个支承构件具有使长度方向上的两端部中的位于所述基板的径向外侧的端部比位于所述基板的径向内侧的端部向由所述旋转机构带动的所述基板旋转的旋转方向后方侧偏移而成的形状。
6.根据权利要求1或2所述的液处理装置,其特征在于,
该液处理装置具备利用刷子对支承到所述多个支承构件的所述基板的上表面进行清洗的刷子清洗部,
所述多个支承构件从下方支承使图案形成面朝向下方的所述基板。
7.根据权利要求1所述的液处理装置,其特征在于,
该液处理装置具备:
多个升降销,其将所述基板向上方抬起而使所述基板自所述多个支承构件分离开;
气体供给部,其从比所述倾斜部靠径向内侧的位置向所述基板的下表面供给气体;
控制部,其在使用所述处理液供给部来对所述基板进行了处理之后,在使用所述多个升降销而使所述基板自所述多个支承构件分离开的状态下,使用所述气体供给部而向所述基板的下表面供给气体。
8.根据权利要求1所述的液处理装置,其特征在于,
所述多个支承构件支承所述基板的周缘部、并具有以与所述倾斜部的所述倾斜面相同的角度倾斜的倾斜面。
9.根据权利要求1所述的液处理装置,其特征在于,
所述倾斜部设于旋转板,
所述旋转板具备第1平坦部,
所述倾斜部与所述第1平坦部的外周缘连接地配置。
10.根据权利要求9所述的液处理装置,其特征在于,
所述旋转板具备第2平坦部,
所述第2平坦部具有与所述倾斜面的外周缘连接的平坦面。
11.根据权利要求10所述的液处理装置,其特征在于,
所述旋转板连接于所述旋转机构。
12.根据权利要求10所述的液处理装置,其特征在于,
所述多个支承构件支承所述基板的周缘部、并具有以与所述倾斜部的所述倾斜面相同的角度倾斜的倾斜面,
所述支承构件具有与所述倾斜面以及所述第2平坦部的平坦面连接的平坦面,
所述支承构件的平坦面设于与所述第2平坦部的平坦面相同的高度。
13.一种液处理装置,其特征在于,
该液处理装置具备:
倾斜部,其配置于基板的下方,具有从所述基板的外侧朝向所述基板的内侧下倾且沿着所述基板的周向延伸的倾斜面;
多个支承构件,其相对于所述倾斜面突出地设置,从下方支承所述基板;
处理液供给部,其向支承到所述多个支承构件的所述基板的上表面供给处理液;
以及旋转机构,其使所述倾斜部旋转,
所述多个支承构件具有从所述基板的外侧朝向所述基板的内侧延伸的细长形状,
该液处理装置具备使所述基板向上方抬起而使所述基板自所述多个支承构件分离开的多个升降销,
所述倾斜部具备将所述倾斜面的外周缘中的与所述多个升降销相对应的各部分去除而成的多个第2缺口部,
在所述第2缺口部的两侧设置有所述多个支承构件中的两个。
14.一种液处理装置,其特征在于,
该液处理装置具备:
倾斜部,其配置于基板的下方,具有从所述基板的外侧朝向所述基板的内侧下倾且沿着所述基板的周向延伸的倾斜面;
多个支承构件,其相对于所述倾斜面突出地设置,从下方支承所述基板;
处理液供给部,其向支承到所述多个支承构件的所述基板的上表面供给处理液;
以及旋转机构,其使所述倾斜部旋转,
所述多个支承构件具有从所述基板的外侧朝向所述基板的内侧延伸的细长形状,
所述倾斜部设于旋转板,
所述旋转板具备第1平坦部,
所述倾斜部与所述第1平坦部的外周缘连接地配置,
所述旋转板具备第2平坦部,
所述第2平坦部具有与所述倾斜面的外周缘连接的平坦面,
所述多个支承构件支承所述基板的周缘部、并具有以与所述倾斜部的所述倾斜面相同的角度倾斜的倾斜面,
所述支承构件具有与所述倾斜面以及所述第2平坦部的平坦面连接的平坦面,
所述支承构件的平坦面设于与所述第2平坦部的平坦面相同的高度。
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