CN107170810B - Reverse-resistance gallium nitride device - Google Patents
Reverse-resistance gallium nitride device Download PDFInfo
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- CN107170810B CN107170810B CN201710371935.4A CN201710371935A CN107170810B CN 107170810 B CN107170810 B CN 107170810B CN 201710371935 A CN201710371935 A CN 201710371935A CN 107170810 B CN107170810 B CN 107170810B
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 50
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims description 49
- 239000002184 metal Substances 0.000 claims description 49
- 230000000903 blocking effect Effects 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 7
- 229910052593 corundum Inorganic materials 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium(III) oxide Inorganic materials O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 15
- 230000008569 process Effects 0.000 abstract description 14
- 239000004065 semiconductor Substances 0.000 abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 13
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 8
- 238000002360 preparation method Methods 0.000 abstract description 7
- 230000008901 benefit Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 40
- 238000005516 engineering process Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000005669 field effect Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910001385 heavy metal Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000007123 defense Effects 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 229910018047 Sc2O Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
The invention belongs to the technical field of semiconductors, and particularly relates to a reverse-resistance gallium nitride device. The invention provides a reverse resistance type gallium nitride device without ohmic contact, aiming at the problems that the conventional reverse resistance type AlGaN/GaN heterojunction high electron mobility transistor is incompatible with the traditional silicon CMOS process, the device preparation temperature is high and the like. The reverse-resistance gallium nitride device provided by the invention has the advantages of compatibility with the traditional silicon process, low-temperature preparation and the like.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a reverse-resistance gallium nitride device.
Background
The power electronic technology is an important supporting technology for modern science, industry and national defense, wherein a power semiconductor device is a foundation of the power electronic technology and is also a strong power for the development of the power electronic technology, and the development of the power semiconductor device plays a decisive role in the development of the power electronic technology. Among them, a novel power semiconductor device represented by a power MOS field effect transistor (MOSFET) and an insulated gate transistor (IGBT) occupies a dominant position, and plays an important role in fields such as 4C electronic products, industrial control, national defense equipment, and the like. However, silicon-based power MOSFET devices are increasingly showing their inadequacies and limitations. The wide bandgap semiconductor material has better material characteristics, and is expected to solve the problem of silicon limit in the development of the current power semiconductor device.
The wide bandgap semiconductor material GaN has the outstanding advantages of wide bandgap, high electron saturation drift velocity, high thermal conductivity, high critical breakdown electric field and the like, greatly improves the withstand voltage capacity, the working frequency and the current density of the GaN power electronic device, greatly reduces the conduction loss of the device, and enables the device to work under severe conditions of high power, high temperature and the like. Particularly, the silicon-based gallium nitride technology combines the performance advantage of the GaN material and the cost advantage of the silicon technology, has become the strategic high point in the field of the international power semiconductor, and is highly valued by governments of various countries in the world. Compared with the traditional Si-based power electronic device, the wide bandgap semiconductor power electronic device which is put into practical use at present can reduce the power consumption by half, thereby reducing or even eliminating a cooling system and greatly reducing the volume and the weight of a power converter.
The wide-bandgap semiconductor power electronic device has very wide military and civil values, such as the field of power electronic systems of military equipment such as tanks, naval vessels, airplanes and cannons, and the like, and civil power electronic equipment, household appliances, train traction equipment and high-voltage direct-current transmission equipment, and is also applied to systems such as PCs, hybrid vehicles, electric automobiles, solar power generation and the like. Among these new power electronic systems, GaN power electronic devices are one of the most core key technologies, which can greatly reduce the consumption of electrical energy, and thus are also known as "green energy" devices that drive "new energy revolution".
AlGaN/GaN heterojunction based High Electron Mobility Transistors (HEMTs) (or Heterojunction Field Effect Transistors (HFETs)) have found wide application in the semiconductor field. However, the conventional AlGaN/GaN heterojunction hemt has no reverse blocking capability, and a large reverse current occurs when the drain voltage is reversed. This situation may lead to damage of the device or system in actual operation. To solve these problems, several reverse-resistance AlGaN/GaN heterojunction high electron mobility transistors have been proposed in recent years. However, the conventional reverse-resistance AlGaN/GaN heterojunction high-electron-mobility transistor has ohmic contact, needs heavy metals such as gold and is prepared under a high-temperature condition, so that the device is incompatible with the traditional silicon process. And during the high temperature ohmic annealing process, the device surface will be oxidized, which will result in the generation of surface states. These surface traps trap electrons and cause the device to develop a large dynamic resistance during dynamic switching.
Disclosure of Invention
The invention aims to solve the problems that a conventional reverse-resistance AlGaN/GaN heterojunction high-electron-mobility transistor is incompatible with a traditional silicon CMOS (complementary metal oxide semiconductor) process, the device preparation temperature is high and the like, and provides a reverse-resistance gallium nitride device without ohmic contact. The reverse-resistance gallium nitride device provided by the invention has the advantages of compatibility with the traditional silicon process, low-temperature preparation and the like.
The technical scheme of the invention is as follows: a reverse-resistance gallium nitride device comprises a substrate 1, a GaN layer 2 and an MGaN layer 3 which are sequentially stacked from bottom to top, wherein the GaN layer 2 and the MGaN layer 3 form a heterojunction; m is a group III element other than Ga; one end of the upper surface of the MGaN layer 3 is provided with drain metal 5, and the drain metal 5 and the MGaN layer 3 form Schottky barrier contact; the other end of the MGaN layer 3 is provided with an insulated gate structure 6, the insulated gate structure 6 is composed of an insulated gate dielectric 8 and a metal gate electrode 9, wherein the metal gate electrode 9 is positioned in an insulated gate groove 7, the insulated gate groove 7 is a groove which penetrates through the MGaN layer 3 and extends into the upper surface of the GaN layer 2, and the metal gate electrode 9 is isolated from the MGaN layer 3 and the GaN layer 2 through the insulated gate dielectric 8; the upper surface of the MGaN layer 3 adjacent to the insulated gate structure 6 has a source metal 4, the source metal 4 is isolated from a metal gate electrode 9 by an insulated gate dielectric 8, and the insulated gate dielectric 8 completely covers the surface of the source metal 4 and extends along the upper surface of the MGaN layer 3 to contact with a part of the lower surface of the drain metal 5.
Further, the part of the bottom of the drain metal 5, which is not in contact with the insulated gate dielectric 8, extends downwards to the upper layer of the embedded GaN layer 2.
Further, the substrate 1 is made of one of silicon, sapphire, silicon carbide and gallium nitride.
Further, the material adopted by the insulated gate dielectric 8 is SiO2、Si3N4、AlN、Al2O3MgO and Sc2O3One kind of (1).
The invention has the beneficial effects that: aiming at the problems that the conventional reverse resistance type AlGaN/GaN heterojunction high electron mobility transistor is incompatible with the traditional silicon CMOS process and the device preparation temperature is high, the invention provides a reverse resistance type gallium nitride device without ohmic contact.
Drawings
FIG. 1 is a schematic diagram of a device structure of the present invention;
FIG. 2 is a schematic diagram of the operating principle of the device of the present invention;
FIG. 3 is a schematic view of an epitaxial wafer during a device fabrication process flow of the present invention;
FIG. 4 is a schematic diagram of the structure of the source Schottky metal and the drain Schottky metal after they are grown in the device manufacturing process flow of the present invention;
FIG. 5 is a schematic structural diagram of a device manufacturing process according to the present invention after MGaN is etched to form an insulated gate trench;
FIG. 6 is a schematic diagram of a device manufacturing process flow according to the present invention after an insulating layer is grown;
fig. 7 is a schematic structural diagram of the device manufacturing process flow after the insulated gate metal is grown.
Fig. 8 is a schematic view of another device structure of the present invention.
Detailed Description
The technical scheme of the invention is described in detail in the following with the accompanying drawings:
as shown in fig. 1, the reverse blocking gallium nitride device of the present invention includes a substrate 1, a GaN layer 2 and an MGaN layer 3, which are sequentially stacked from bottom to top, wherein the GaN layer 2 and the MGaN layer 3 form a heterojunction; m is a group III element other than Ga; one end of the upper surface of the MGaN layer 3 is provided with drain metal 5, and the drain metal 5 and the MGaN layer 3 form Schottky barrier contact; the other end of the MGaN layer 3 is provided with an insulated gate structure 6, the insulated gate structure 6 is composed of an insulated gate dielectric 8 and a metal gate electrode 9, wherein the metal gate electrode 9 is positioned in an insulated gate groove 7, the insulated gate groove 7 is a groove which penetrates through the MGaN layer 3 and extends into the upper surface of the GaN layer 2, and the metal gate electrode 9 is isolated from the MGaN layer 3 and the GaN layer 2 through the insulated gate dielectric 8; the upper surface of the MGaN layer 3 adjacent to the insulated gate structure 6 has a source metal 4, the source metal 4 is isolated from a metal gate electrode 9 by an insulated gate dielectric 8, and the insulated gate dielectric 8 completely covers the surface of the source metal 4 and extends along the upper surface of the MGaN layer 3 to contact with a part of the lower surface of the drain metal 5.
The traditional reverse-resistance type gallium nitride field effect transistor has ohmic contact, needs heavy metals such as gold and the like and is prepared under the high-temperature condition, so that the device is incompatible with the traditional silicon process. And during the high temperature ohmic annealing process, the device surface will be oxidized, which will result in the generation of surface states. These surface traps trap electrons and cause the device to develop a large dynamic resistance during dynamic switching. To solve these problems, the present invention proposes a reverse blocking type gan field effect transistor (as shown in fig. 1) without ohmic contact. The source electrode and the drain electrode of the device are both in a Schottky contact structure instead of a traditional ohmic contact structure, and meanwhile, a grid structure is introduced near the Schottky source electrode structure to control the energy band structure of a barrier layer below the Schottky contact of the source electrode so as to realize the on-off of the device. Because the reverse resistance type gallium nitride field effect transistor does not have ohmic contact, heavy metal is not required to be utilized, and the reverse resistance type gallium nitride field effect transistor can be compatible with a CMOS (complementary metal oxide semiconductor) process. Meanwhile, the invention does not need a high-temperature annealing process, and the device can be prepared at a lower temperature, thereby avoiding the problems of surface oxidation and the like of the device.
In the structure shown in fig. 1, SiO2, Si3N4, AlN, Al2O3, MgO, or Sc2O3 is grown as a passivation layer on the AlGaN layer surface, which can further reduce leakage current and improve performance. The depth of the groove of the source Schottky contact electrode embedded into the upper layer of the GaN layer is hundreds of nanometers. The Schottky source structure and the insulated gate structure are separated by an insulating medium, and the quality of the medium directly influences the performance of the device.
The basic working principle of the invention is as follows:
firstly, the energy band structure of a barrier layer below a Schottky contact is controlled by an insulated gate structure near the Schottky source contact to change the working state of the device, so that the device is turned on and off. When a positive voltage is applied to the grid electrode, the thickness of a potential barrier below the source Schottky becomes thinner (figure 2), the tunneling probability of electrons is increased, and the device can have the current characteristics similar to ohmic contact; when the gate is under negative voltage, the thickness of the Schottky barrier is thickened, the tunneling probability of electrons is reduced, the electrons can hardly pass through the barrier, and the device can realize forward blocking capability. Meanwhile, the invention realizes reverse blocking of the device by using the Schottky drain electrode.
The device of the invention is compatible with the traditional CMOS process, and can be prepared by utilizing the traditional CMOS process line, and the following special description is required:
1. the substrate 1 may be silicon, sapphire, silicon carbide or gallium nitride.
2. Other materials may be present between the substrate 1 and the GaN layer 2.
3. The drain metal 5 may extend to the GaN layer 2.
4. Schottky contacts are formed between the source metal 4 and the drain metal 5 and the MGaN layer 3 instead of the conventional ohmic contacts.
5. The insulated gate dielectric 8 is made of one of SiO2, Si3N4, AlN, Al2O3, MgO or Sc2O 3.
6. The insulated gate structure 6 must be in the vicinity of the source metal 4.
7. The insulated gate structure 6 has to extend to the GaN layer 2.
8. Extending the schottky drain metal 5 to the metal length of the insulated gate dielectric 8 to form a drain field plate can improve the reverse blocking capability of the device.
9. The metal length of the schottky source metal 4 on the surface of the insulated gate dielectric 8 is prolonged to form a source field plate, so that the forward blocking capability of the device can be improved.
10. The source metal 4, the drain metal 5, and the metal gate electrode 9 may not contain a heavy metal such as gold.
In the present invention, the following two schemes can be adopted to prepare the insulating dielectric material.
(a) Preparation of Al by Atomic Layer Deposition (ALD)2O3、HfO2、TiO2And the like. ALD produces films that are self-limiting, allows precise control of film thickness and chemical composition, and deposits films with good uniformity and conformality. Should consider the use of compoundingBy lamination, e.g. HfO2/Al2O3And the like.
(b) Preparation of Ga by MOCVD apparatus2O3、Al2O3AlGaO or AlGaO/Al2O3And preparing high-performance insulated gate dielectric by various single-layer and mixed-layer structures and various laminated structures. The MOCVD method has the advantages of compact film forming state of the medium material, accurate thickness control, easy formation of a mixed film, good repeatability of a multilayer film and the like, and particularly has larger controllable space for controlling the interface state.
The manufacturing process flow of the invention is shown in fig. 3-7, and mainly comprises the following steps:
fig. 3 is an epitaxial wafer with a heterojunction structure, fig. 4 is the growth of schottky source metal and schottky drain metal, fig. 5 and 6 are the etching of shallow recesses of the insulated gate and the growth of the insulated gate dielectric, and fig. 7 is the growth of insulated gate metal.
Claims (3)
1. A reverse-resistance gallium nitride device comprises a substrate (1), a GaN layer (2) and an MGaN layer (3) which are sequentially stacked from bottom to top, wherein the GaN layer (2) and the MGaN layer (3) form a heterojunction; m in the MGaN layer (3) is a group III element other than Ga; one end of the upper surface of the MGaN layer (3) is provided with drain metal (5), and the drain metal (5) and the MGaN layer (3) form Schottky barrier contact; the GaN-based light-emitting diode is characterized in that an insulated gate structure (6) is arranged at the other end of the MGaN layer (3), the insulated gate structure (6) is composed of an insulated gate dielectric (8) and a metal gate electrode (9), the metal gate electrode (9) is positioned in an insulated gate groove (7), the insulated gate groove (7) penetrates through the MGaN layer (3) and extends into the upper surface of the GaN layer (2), and the metal gate electrode (9) is isolated from the MGaN layer (3) and the GaN layer (2) through the insulated gate dielectric (8); the upper surface of the MGaN layer (3) adjacent to the insulated gate structure (6) is provided with a source metal (4), the source metal (4) is isolated from a metal gate electrode (9) through an insulated gate dielectric (8), and the insulated gate dielectric (8) completely covers the surface of the source metal (4) and extends along the upper surface of the MGaN layer (3) to be in contact with the lower surface of part of the drain metal (5);
and the part of the bottom of the drain metal (5) which is not contacted with the insulated gate dielectric (8) extends downwards to the upper layer of the embedded GaN layer (2).
2. A reverse blocking gallium nitride device according to claim 1, characterized in that the substrate (1) is made of one of silicon, sapphire, silicon carbide and gallium nitride.
3. A reverse blocking gan device according to claim 2 wherein the material used for the gate dielectric (8) is SiO2、Si3N4、AlN、Al2O3MgO and Sc2O3One kind of (1).
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| CN108649069A (en) * | 2018-04-20 | 2018-10-12 | 复旦大学 | Leak the radio frequency GaN/AlGaN devices and preparation method thereof of expansion structure |
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