CN107170810A - A kind of inverse-impedance type gallium nitride device - Google Patents
A kind of inverse-impedance type gallium nitride device Download PDFInfo
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- CN107170810A CN107170810A CN201710371935.4A CN201710371935A CN107170810A CN 107170810 A CN107170810 A CN 107170810A CN 201710371935 A CN201710371935 A CN 201710371935A CN 107170810 A CN107170810 A CN 107170810A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 51
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims description 48
- 239000002184 metal Substances 0.000 claims description 48
- 238000009413 insulation Methods 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 7
- 229910052593 corundum Inorganic materials 0.000 claims description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 229910017083 AlN Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 4
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium(III) oxide Inorganic materials O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 13
- 238000005516 engineering process Methods 0.000 abstract description 13
- 230000008569 process Effects 0.000 abstract description 12
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 8
- 238000002360 preparation method Methods 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000005669 field effect Effects 0.000 description 4
- 229910001385 heavy metal Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000009527 percussion Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The invention belongs to technical field of semiconductors, a kind of inverse-impedance type gallium nitride device is particularly related to.The present invention is for conventional inverse-impedance type AlGaN/GaN hetero-junctions HEMT and traditional silicon CMOS technology be incompatible and the problems such as high device preparation temperature, the present invention proposes a kind of inverse-impedance type gallium nitride device without Ohmic contact.Inverse-impedance type gallium nitride device proposed by the invention have the advantages that with traditional silicon process compatible, can low temperature preparation.
Description
Technical field
The invention belongs to technical field of semiconductors, a kind of inverse-impedance type gallium nitride device is particularly related to.
Background technology
Power Electronic Technique is the important support technology of modern science, industry and national defence, and wherein power semiconductor had been both
It is the basis of Power Electronic Technique, is also the very strong driving force of Development of Power Electronic Technology, the development of power semiconductor is to electricity
The development of power electronic technology plays decisive role.Wherein, with MOS field effect tube (MOSFET) and gated transistor
(IGBT) leading position is occupied for the novel power semiconductor of representative, in 4C electronic products, Industry Control, defence equipment
Played an important role Deng field.However, the power MOSFET device based on silicon materials increasingly show its it is not enough and
Limitation.Semiconductor material with wide forbidden band has more excellent material property, is expected to solve current power semiconductor development institute face
" the silicon limit " problem faced.
Semiconductor material with wide forbidden band GaN has broad-band gap, high electronics saturation drift velocity, high heat conductance, high critical punctured
The outstanding advantages such as electric field, drastically increase GaN power electronic devices overvoltage capacity, working frequency and current density, drop significantly
Low break-over of device loss, allows device to be worked under the mal-conditions such as high-power and high temperature.Particularly silicon based gallium nitride skill
Art combines the performance advantage of GaN material and the cost advantage of silicon technology, it has also become international power semiconductor field strategy system is high
Point, is paid much attention to by countries in the world government.Compared with traditional Si base power electronic devices, practical broad stopband at present
So as to reduce or even cancel cooling system, electric power change can be greatly lowered in lower power consumption half by semiconductor power electronic device
The volume and weight of parallel operation.
Wide bandgap semiconductor power electronic devices has a dual-use value widely, such as tank, naval vessels, flies
The power electronic system field of the military equipments such as machine, cannon and civilian power electronic equipment, household electrical appliance, train traction are set
Standby, high-voltage direct-current transmission system, is also being applied to PC, motor vehicle driven by mixed power, electric automobile, the system such as solar power generation.
In these novel electric power electric systems, GaN power electronic devices is one of most crucial key technology, can substantially reduce electric energy
Consumption, therefore also it is described as driving " green energy resource " device of " new energy revolution ".
HEMT (HEMT) (or HFET based on AlGaN/GaN hetero-junctions
HFET) extensive use is had been achieved with semiconductor applications.But conventional AlGaN/GaN hetero-junctions HEMTs
Do not possess reverse blocking capability, when drain voltage is reverse, it may appear that larger reverse current.Such case is in real work
It may result in the damage of device or system.To solve these problems, there has been proposed several inverse-impedance type AlGaN/ in recent years
GaN hetero-junctions HEMTs.But conventional inverse-impedance type AlGaN/GaN hetero-junctions HEMTs
All there is Ohmic contact, it is necessary to the heavy metal such as gold and prepare under the high temperature conditions so that device is not simultaneous with traditional silicon technology
Hold.And in high temperature ohmic annealing process, device surface will be oxidized, and this can cause the generation of surface state.These surfaces
Trap meeting trapped electron so that device can produce larger dynamic electric resistor during dynamic switch.
The content of the invention
The purpose of the present invention, is with passing for conventional inverse-impedance type AlGaN/GaN hetero-junctions HEMT
Unite that silicon CMOS technology is incompatible and the problems such as high device preparation temperature, the present invention proposes a kind of inverse-impedance type without Ohmic contact
Gallium nitride device.Inverse-impedance type gallium nitride device proposed by the invention have with traditional silicon process compatible, can low temperature preparation etc. it is excellent
Point.
The technical scheme is that：A kind of inverse-impedance type gallium nitride device, including the lining being cascading from bottom to up
Bottom 1, GaN layer 2 and MGaN layers 3, the GaN layer 2 and the formation hetero-junctions of MGaN layers 3；The M is III race's element in addition to Ga；
Described upper surface one end of MGaN layers 3 has drain metal 5, the drain metal 5 and the formation Schottky Barrier Contact of MGaN layers 3；
Characterized in that, having insulated gate structures 6 in the other end of MGaN layers 3, the insulated gate structures 6 are by insulation gate medium
8 and metal gate electrode 9 constitute, wherein metal gate electrode 9 be located at insulation grid recess 7 in, it is described insulation grid recess 7 be through MGaN
Layer 3 and the groove for extending into the upper surface of GaN layer 2, the gate medium 8 that insulate is passed through between metal gate electrode 9 and MGaN layers 3 and GaN layer 2
Isolation；MGaN layer 3 upper surface adjacent with insulated gate structures 6 has source metal 4, the source metal 4 and metal gate electricity
Isolated between pole 9 by the gate medium 8 that insulate, and the surface of source metal 4 is completely covered and along along MGaN layers 3 in insulation gate medium 8
Surface is extended to be contacted with the lower surface of part drain metal 5.
Further, the part that the bottom of drain metal 5 is not contacted with insulation gate medium 8, extends downward into embedded GaN
2 upper strata of layer.
Further, the material that the substrate 1 is used is one kind in silicon, sapphire, carborundum and gallium nitride.
Further, the material that the insulation gate medium 8 is used is SiO2、Si3N4、AlN、Al2O3, MgO and Sc2O3In
It is a kind of.
The beneficial effects of the invention are as follows：For conventional inverse-impedance type AlGaN/GaN hetero-junctions HEMTs
Exist with traditional silicon CMOS technology is incompatible and the problems such as high device preparation temperature, the present invention proposes one kind and connect without ohm
Tactile inverse-impedance type gallium nitride device, the device due in the absence of Ohmic contact, can with traditional silicon process compatible, can low temperature preparation.
Brief description of the drawings
Fig. 1 is device architecture schematic diagram of the invention；
Fig. 2 is device operation principle schematic diagram of the invention；
Fig. 3 is epitaxial wafer schematic diagram in the device fabrication process flow of the present invention；
Fig. 4 is knot after growth source electrode schottky metal in the device fabrication process flow of the present invention and drain schottky metal
Structure schematic diagram；
Fig. 5 is structural representation after etching MGaN formation insulation grid recess in the device fabrication process flow of the present invention；
Fig. 6 is structural representation after growth insulating barrier in the device fabrication process flow of the present invention；
Fig. 7 is structural representation after growth insulated gate metal in the device fabrication process flow of the present invention.
Fig. 8 is another device architecture schematic diagram of the invention.
Embodiment
Below in conjunction with the accompanying drawings, technical scheme is described in detail：
As shown in figure 1, be the present invention inverse-impedance type gallium nitride device, including be cascading from bottom to up substrate 1,
GaN layer 2 and MGaN layers 3, the GaN layer 2 and the formation hetero-junctions of MGaN layers 3；The M is III race's element in addition to Ga；It is described
The upper surface one end of MGaN layers 3 has drain metal 5, the drain metal 5 and the formation Schottky Barrier Contact of MGaN layers 3；It is special
Levy and be, there are insulated gate structures 6 in the other end of MGaN layers 3, the insulated gate structures 6 are by the He of insulation gate medium 8
Metal gate electrode 9 is constituted, and wherein metal gate electrode 9 is located in insulation grid recess 7, and the insulation grid recess 7 is through MGaN layers 3
And extend into the groove of the upper surface of GaN layer 2, between metal gate electrode 9 and MGaN layers 3 and GaN layer 2 by insulate gate medium 8 every
From；MGaN layer 3 upper surface adjacent with insulated gate structures 6 has source metal 4, the source metal 4 and metal gate electrode 9
Between isolated by the gate medium 8 that insulate, and the surface of source metal 4 is completely covered and along the upper surface of MGaN layers 3 in insulation gate medium 8
Extend to and contacted with the lower surface of part drain metal 5.
Traditional inverse-impedance type gallium nitride field effect transistor there is Ohmic contact, it is necessary to the heavy metal such as gold and in hot conditions
It is lower to prepare so that device and traditional silicon technology are incompatible.And in high temperature ohmic annealing process, device surface will be by oxygen
Change, this can cause the generation of surface state.These surface traps meeting trapped electron so that device can be produced during dynamic switch
Larger dynamic electric resistor.To solve these problems, it is brilliant that the present invention proposes a kind of inverse-impedance type gallium nitride field effect without Ohmic contact
Body pipe (as shown in Figure 1).The source electrode of device of the present invention and drain electrode are all Schottky contact structure and unconventional Ohmic contact knot
Structure, while one grid structure of introducing near schottky source structure is to control barrier layer below source electrode Schottky contacts
Realization of the band structure to realize device is opened and shut off.Because the inverse-impedance type gallium nitride field effect transistor of the present invention is not present
Ohmic contact, it is not necessary to utilize heavy metal, can be compatible with CMOS technology.Meanwhile, the present invention does not need high-temperature annealing process, device
Part can be prepared at a lower temperature, can avoid the problems such as device surface is oxidized.
In structure as shown in Figure 1, in AlGaN layer superficial growth SiO2, Si3N4, AlN, Al2O3, MgO or Sc2O3
As passivation layer, electric leakage can be further reduced, performance is improved.The groove on source electrode Schottky contact electrode insertion GaN layer upper strata
Depth is hundreds of nanometers.Schottky source structure is separated with insulated gate structure with dielectric, the quality directly shadow of mass of medium
The performance of Chinese percussion instrument part.
The present invention basic functional principle be：
The energy band of barrier layer below Schottky contacts is controlled by the insulated gate structure near Schottky source contact first
Structure changes the working condition of device, realizes being switched on and off for device.When grid adds positive voltage, under source electrode Schottky
The potential barrier thickness of side is thinning (Fig. 2), the tunnelling probability increase of electronics, and device can be caused to have the electric current of similar Ohmic contact special
Property；When in grid negative voltage, Schottky barrier thickness is thickening, and the tunnelling probability reduction of electronics, electronics can not almost pass through gesture
Build, device can realize forward blocking ability.The present invention realizes the reverse blocking of device using Schottky drain simultaneously.
The device of the present invention is compatible with traditional cmos process, it is possible to use traditional CMOS technology line prepares the device, needs
What is illustrated is：
1st, substrate 1 can be silicon, sapphire, carborundum or gallium nitride.
2nd, there may be other materials between substrate 1 and GaN layer 2.
3rd, drain metal 5 may extend to GaN layer 2.
4th, formed between source metal 4 and drain metal 5 and MGaN layers 3 be Schottky contacts and unconventional ohm connects
Touch.
5th, the material that the insulation gate medium 8 is used is one kind in SiO2, Si3N4, AlN, Al2O3, MgO or Sc2O3.
6th, insulated gate structures 6 must be near source metal 4.
7th, insulated gate structures 6 must extend to GaN layer 2.
8th, extension Schottky drain metal 5 can improve device in the metal length formation drain electrode field plate of insulation gate medium 8
Reverse blocking capability.
9th, metal length formation source electrode field plate of the extension Schottky drain metal 4 on insulation gate medium 8 surface can be improved
The forward blocking ability of device.
10th, source metal 4, drain metal 5 and metal gate electrode 9 can not include the heavy metals such as gold.
In the present invention, insulating dielectric materials can be prepared using following two schemes.
(a) Al is prepared using atomic layer deposition (ALD)2O3、HfO2、TiO2Deng dielectric material.The film that ALD is grown is
From limitation, the thickness and chemical constituent of film can be accurately controlled, and the film of deposit has good uniformity and guarantor
Shape.It is considered as realizing using the method for composite laminate, such as HfO2/Al2O3Deng.
(b) Ga is prepared using MOCVD device2O3、Al2O3, AlGaO or AlGaO/Al2O3Etc. various individual layers, mixed layer and
Various laminated construction, to prepare High Performance Insulation gate medium.Have dielectric material film-forming state fine and close, thick using MOCVD methods
Degree control precisely, the advantages of be easily formed hybrid films and reproducible multilayer film, the inspectable space particularly controlled interfacial state
It is larger.
The manufacturing process flow of the present invention mainly includes as shown in Fig. 3-Fig. 7：
Fig. 3 is the epitaxial wafer with heterojunction structure, Fig. 4 growth schottky source metals and Schottky drain metal, Fig. 5
With Fig. 6 to etch insulated gate shallow grooves and growing insulation gate medium, Fig. 7 growth insulated gate metals.
Claims (4)
1. a kind of inverse-impedance type gallium nitride device, including substrate (1), GaN layer (2) and MGaN layers being cascading from bottom to up
(3), the GaN layer (2) and MGaN layers (3) form hetero-junctions；The M is III race's element in addition to Ga；Described MGaN layers (3)
Upper surface one end has drain metal (5), and the drain metal (5) forms Schottky Barrier Contact with MGaN layers (3)；Its feature
It is there is insulated gate structures (6) in described MGaN layers (3) other end, the insulated gate structures (6) are by insulation gate medium
(8) constituted with metal gate electrode (9), wherein metal gate electrode (9) is located in insulation grid recess (7), the insulation grid recess (7)
Through MGaN layers (3) and to extend into the groove of GaN layer (2) upper surface, metal gate electrode (9) and MGaN layers (3) and GaN layer
(2) isolated between by the gate medium that insulate (8)；MGaN layer (3) upper surface adjacent with insulated gate structures (6) has source electrode gold
Belong to (4), isolated between the source metal (4) and metal gate electrode (9) by the gate medium that insulate (8), and insulation gate medium (8)
The surface of source metal (4) is completely covered and is extended to along MGaN layers of (3) upper surface and is connect with the lower surface of part drain metal (5)
Touch.
2. a kind of inverse-impedance type gallium nitride device according to claim 1, it is characterised in that drain metal (5) bottom
The part not contacted with insulation gate medium (8), extends downward into embedded GaN layer (2) upper strata.
3. a kind of inverse-impedance type gallium nitride device according to claim 1 or 2, it is characterised in that what the substrate (1) used
Material is one kind in silicon, sapphire, carborundum and gallium nitride.
4. a kind of inverse-impedance type gallium nitride device according to claim 3, it is characterised in that the insulation gate medium (8) is adopted
Material is SiO2、Si3N4、AlN、Al2O3, MgO and Sc2O3In one kind.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710371935.4A CN107170810B (en) | 2017-05-24 | 2017-05-24 | Reverse-resistance gallium nitride device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710371935.4A CN107170810B (en) | 2017-05-24 | 2017-05-24 | Reverse-resistance gallium nitride device |
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| CN107170810A true CN107170810A (en) | 2017-09-15 |
| CN107170810B CN107170810B (en) | 2020-03-31 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107910372A (en) * | 2017-11-14 | 2018-04-13 | 电子科技大学 | A kind of gallium nitride grid-control tunnel bidirection switching device |
| CN108649069A (en) * | 2018-04-20 | 2018-10-12 | 复旦大学 | Leak the radio frequency GaN/AlGaN devices and preparation method thereof of expansion structure |
| CN117878152A (en) * | 2024-02-19 | 2024-04-12 | 松山湖材料实验室 | Reverse resistance GaN power device and preparation method thereof |
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|---|---|---|---|---|
| WO2012003609A1 (en) * | 2010-07-06 | 2012-01-12 | The Hong Kong University Of Science And Technology | Normally-off iii-nitride metal-2deg tunnel junction field-effect transistors |
| CN105304707A (en) * | 2015-10-28 | 2016-02-03 | 电子科技大学 | Enhanced HEMT device |
| CN106653837A (en) * | 2016-12-02 | 2017-05-10 | 电子科技大学 | Gallium nitride bidirectional switching device |
-
2017
- 2017-05-24 CN CN201710371935.4A patent/CN107170810B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012003609A1 (en) * | 2010-07-06 | 2012-01-12 | The Hong Kong University Of Science And Technology | Normally-off iii-nitride metal-2deg tunnel junction field-effect transistors |
| CN105304707A (en) * | 2015-10-28 | 2016-02-03 | 电子科技大学 | Enhanced HEMT device |
| CN106653837A (en) * | 2016-12-02 | 2017-05-10 | 电子科技大学 | Gallium nitride bidirectional switching device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107910372A (en) * | 2017-11-14 | 2018-04-13 | 电子科技大学 | A kind of gallium nitride grid-control tunnel bidirection switching device |
| CN108649069A (en) * | 2018-04-20 | 2018-10-12 | 复旦大学 | Leak the radio frequency GaN/AlGaN devices and preparation method thereof of expansion structure |
| CN117878152A (en) * | 2024-02-19 | 2024-04-12 | 松山湖材料实验室 | Reverse resistance GaN power device and preparation method thereof |
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| CN107170810B (en) | 2020-03-31 |
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