CN107130290B - 单晶的制造方法和制造装置 - Google Patents

单晶的制造方法和制造装置 Download PDF

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Publication number
CN107130290B
CN107130290B CN201710111932.7A CN201710111932A CN107130290B CN 107130290 B CN107130290 B CN 107130290B CN 201710111932 A CN201710111932 A CN 201710111932A CN 107130290 B CN107130290 B CN 107130290B
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monocrystalline
maximum brightness
row
diameter
line
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Chinese (zh)
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CN107130290A (zh
Inventor
滨田建
高梨启一
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Sumco Corp
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Sumco Corp
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201710111932.7A 2016-02-29 2017-02-28 单晶的制造方法和制造装置 Active CN107130290B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016036629A JP6447537B2 (ja) 2016-02-29 2016-02-29 単結晶の製造方法および製造装置
JP2016-036629 2016-02-29

Publications (2)

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CN107130290A CN107130290A (zh) 2017-09-05
CN107130290B true CN107130290B (zh) 2019-07-30

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CN201710111932.7A Active CN107130290B (zh) 2016-02-29 2017-02-28 单晶的制造方法和制造装置

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JP (1) JP6447537B2 (https=)
CN (1) CN107130290B (https=)
TW (1) TWI615513B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107818559B (zh) * 2017-09-22 2021-08-20 太原理工大学 晶体接种状态检测方法和晶体接种状态图像的采集装置
JP6885301B2 (ja) * 2017-11-07 2021-06-09 株式会社Sumco 単結晶の製造方法及び装置
DE112020006173T5 (de) * 2019-12-18 2022-11-17 Sumco Corporation Einkristall-Herstellungssystem und Einkristall-Herstellungsverfahren
TWI770661B (zh) * 2020-04-20 2022-07-11 日商Ｓｕｍｃｏ股份有限公司 單結晶製造裝置及單結晶的製造方法
CN115682966A (zh) * 2021-07-29 2023-02-03 内蒙古中环协鑫光伏材料有限公司 一种等径制程中硅棒在线直径的检测方法
CN114926440A (zh) * 2022-05-26 2022-08-19 之江实验室 一种基于同心椭圆弦长比的单晶硅直径检测方法及装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI911856A7 (fi) * 1990-04-27 1991-10-28 Nippon Kokan Kk Foerfarande och apparat foer bestaemning av diametern hos en enskild silikonkristall.
JP3484758B2 (ja) * 1994-05-17 2004-01-06 三菱住友シリコン株式会社 結晶成長装置及び結晶成長方法
US5922127A (en) * 1997-09-30 1999-07-13 Memc Electronic Materials, Inc. Heat shield for crystal puller
JP4089500B2 (ja) * 2003-05-06 2008-05-28 株式会社Ｓｕｍｃｏ 単結晶引き上げ装置内の融液の液面位置測定方法
JP4918897B2 (ja) * 2007-08-29 2012-04-18 株式会社Ｓｕｍｃｏ シリコン単結晶引上方法
TWI411709B (zh) * 2009-03-27 2013-10-11 Sumco Corp 單晶直徑的控制方法
JP5678635B2 (ja) * 2010-12-13 2015-03-04 株式会社Sumco シリコン単結晶の製造装置、シリコン単結晶の製造方法
JP5664573B2 (ja) * 2012-02-21 2015-02-04 信越半導体株式会社 シリコン融液面の高さ位置の算出方法およびシリコン単結晶の引上げ方法ならびにシリコン単結晶引上げ装置
JP6078974B2 (ja) * 2012-04-04 2017-02-15 株式会社Sumco シリコン単結晶の製造方法
JP5924090B2 (ja) * 2012-04-12 2016-05-25 株式会社Sumco 単結晶引き上げ方法

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Publication number Publication date
CN107130290A (zh) 2017-09-05
JP2017154901A (ja) 2017-09-07
TWI615513B (zh) 2018-02-21
TW201732097A (zh) 2017-09-16
JP6447537B2 (ja) 2019-01-09

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