TWI615513B - 單晶的製造方法及製造裝置 - Google Patents
單晶的製造方法及製造裝置 Download PDFInfo
- Publication number
- TWI615513B TWI615513B TW105136099A TW105136099A TWI615513B TW I615513 B TWI615513 B TW I615513B TW 105136099 A TW105136099 A TW 105136099A TW 105136099 A TW105136099 A TW 105136099A TW I615513 B TWI615513 B TW I615513B
- Authority
- TW
- Taiwan
- Prior art keywords
- single crystal
- brightness
- diameter
- line
- highest brightness
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 102
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000005259 measurement Methods 0.000 claims abstract description 99
- 238000009826 distribution Methods 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 44
- 239000000155 melt Substances 0.000 claims abstract description 21
- 230000004927 fusion Effects 0.000 claims description 26
- 230000008018 melting Effects 0.000 claims description 24
- 238000002844 melting Methods 0.000 claims description 24
- 230000011218 segmentation Effects 0.000 claims description 6
- 238000012545 processing Methods 0.000 abstract description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 42
- 239000010453 quartz Substances 0.000 description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- 239000007788 liquid Substances 0.000 description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 229910002804 graphite Inorganic materials 0.000 description 9
- 239000010439 graphite Substances 0.000 description 9
- 238000004804 winding Methods 0.000 description 7
- 230000005499 meniscus Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000004033 diameter control Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011534 incubation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016036629A JP6447537B2 (ja) | 2016-02-29 | 2016-02-29 | 単結晶の製造方法および製造装置 |
| JP2016-036629 | 2016-02-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201732097A TW201732097A (zh) | 2017-09-16 |
| TWI615513B true TWI615513B (zh) | 2018-02-21 |
Family
ID=59721692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105136099A TWI615513B (zh) | 2016-02-29 | 2016-11-07 | 單晶的製造方法及製造裝置 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6447537B2 (https=) |
| CN (1) | CN107130290B (https=) |
| TW (1) | TWI615513B (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107818559B (zh) * | 2017-09-22 | 2021-08-20 | 太原理工大学 | 晶体接种状态检测方法和晶体接种状态图像的采集装置 |
| JP6885301B2 (ja) * | 2017-11-07 | 2021-06-09 | 株式会社Sumco | 単結晶の製造方法及び装置 |
| DE112020006173T5 (de) * | 2019-12-18 | 2022-11-17 | Sumco Corporation | Einkristall-Herstellungssystem und Einkristall-Herstellungsverfahren |
| TWI770661B (zh) * | 2020-04-20 | 2022-07-11 | 日商Ｓｕｍｃｏ股份有限公司 | 單結晶製造裝置及單結晶的製造方法 |
| CN115682966A (zh) * | 2021-07-29 | 2023-02-03 | 内蒙古中环协鑫光伏材料有限公司 | 一种等径制程中硅棒在线直径的检测方法 |
| CN114926440A (zh) * | 2022-05-26 | 2022-08-19 | 之江实验室 | 一种基于同心椭圆弦长比的单晶硅直径检测方法及装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201040328A (en) * | 2009-03-27 | 2010-11-16 | Sumco Corp | Method for controlling diameter of single crystal |
| JP2012126585A (ja) * | 2010-12-13 | 2012-07-05 | Sumco Corp | シリコン単結晶の製造装置、シリコン単結晶の製造方法 |
| JP2013170097A (ja) * | 2012-02-21 | 2013-09-02 | Shin Etsu Handotai Co Ltd | シリコン融液面の高さ位置の算出方法およびシリコン単結晶の引上げ方法ならびにシリコン単結晶引上げ装置 |
| JP2013216505A (ja) * | 2012-04-04 | 2013-10-24 | Sumco Corp | シリコン単結晶の製造装置、シリコン単結晶の製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FI911856A7 (fi) * | 1990-04-27 | 1991-10-28 | Nippon Kokan Kk | Foerfarande och apparat foer bestaemning av diametern hos en enskild silikonkristall. |
| JP3484758B2 (ja) * | 1994-05-17 | 2004-01-06 | 三菱住友シリコン株式会社 | 結晶成長装置及び結晶成長方法 |
| US5922127A (en) * | 1997-09-30 | 1999-07-13 | Memc Electronic Materials, Inc. | Heat shield for crystal puller |
| JP4089500B2 (ja) * | 2003-05-06 | 2008-05-28 | 株式会社Ｓｕｍｃｏ | 単結晶引き上げ装置内の融液の液面位置測定方法 |
| JP4918897B2 (ja) * | 2007-08-29 | 2012-04-18 | 株式会社Ｓｕｍｃｏ | シリコン単結晶引上方法 |
| JP5924090B2 (ja) * | 2012-04-12 | 2016-05-25 | 株式会社Sumco | 単結晶引き上げ方法 |
-
2016
- 2016-02-29 JP JP2016036629A patent/JP6447537B2/ja active Active
- 2016-11-07 TW TW105136099A patent/TWI615513B/zh active
-
2017
- 2017-02-28 CN CN201710111932.7A patent/CN107130290B/zh active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201040328A (en) * | 2009-03-27 | 2010-11-16 | Sumco Corp | Method for controlling diameter of single crystal |
| JP2012126585A (ja) * | 2010-12-13 | 2012-07-05 | Sumco Corp | シリコン単結晶の製造装置、シリコン単結晶の製造方法 |
| JP2013170097A (ja) * | 2012-02-21 | 2013-09-02 | Shin Etsu Handotai Co Ltd | シリコン融液面の高さ位置の算出方法およびシリコン単結晶の引上げ方法ならびにシリコン単結晶引上げ装置 |
| JP2013216505A (ja) * | 2012-04-04 | 2013-10-24 | Sumco Corp | シリコン単結晶の製造装置、シリコン単結晶の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107130290A (zh) | 2017-09-05 |
| JP2017154901A (ja) | 2017-09-07 |
| TW201732097A (zh) | 2017-09-16 |
| JP6447537B2 (ja) | 2019-01-09 |
| CN107130290B (zh) | 2019-07-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI615513B (zh) | 單晶的製造方法及製造裝置 | |
| TWI596243B (zh) | 單結晶的製造方法及裝置 | |
| JP6078974B2 (ja) | シリコン単結晶の製造方法 | |
| KR101289400B1 (ko) | 실리콘 단결정의 제조방법 | |
| TWI675131B (zh) | 單結晶的製造方法及裝置 | |
| JP6477356B2 (ja) | 単結晶の製造方法および製造装置 | |
| JP6645406B2 (ja) | 単結晶の製造方法 | |
| TW202140865A (zh) | 單結晶製造裝置及單結晶的製造方法 | |
| JP2017105654A (ja) | シリコン単結晶の製造方法 | |
| JP2019214486A (ja) | 融液面と種結晶の間隔測定方法、種結晶の予熱方法、及び単結晶の製造方法 | |
| KR102906414B1 (ko) | 단결정의 제조 방법 및 단결정 제조 장치 | |
| TWI782726B (zh) | 單結晶的製造方法 | |
| JP7845123B2 (ja) | シリコン単結晶の製造システム及び製造方法 | |
| KR102783938B1 (ko) | 실리콘 단결정의 제조 방법 및 장치 그리고 실리콘 웨이퍼의 제조 방법 | |
| JP2011032136A (ja) | 液面高さレベル把握方法 |