CN107090593A - 线的气相合成 - Google Patents

线的气相合成 Download PDF

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Publication number
CN107090593A
CN107090593A CN201710173361.XA CN201710173361A CN107090593A CN 107090593 A CN107090593 A CN 107090593A CN 201710173361 A CN201710173361 A CN 201710173361A CN 107090593 A CN107090593 A CN 107090593A
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CN
China
Prior art keywords
growth
wire
wires
reactor
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710173361.XA
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English (en)
Chinese (zh)
Inventor
L.萨穆尔森
M.霍伊林
M.马格努森
K.德珀特
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BTG International Ltd
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BTG International Ltd
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Publication of CN107090593A publication Critical patent/CN107090593A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/62—Whiskers or needles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201710173361.XA 2010-05-11 2011-05-11 线的气相合成 Pending CN107090593A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE1050466-0 2010-05-11
SE1050466 2010-05-11
CN201180034310.XA CN102971452B (zh) 2010-05-11 2011-05-11 线的气相合成

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201180034310.XA Division CN102971452B (zh) 2010-05-11 2011-05-11 线的气相合成

Publications (1)

Publication Number Publication Date
CN107090593A true CN107090593A (zh) 2017-08-25

Family

ID=44914587

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201710173361.XA Pending CN107090593A (zh) 2010-05-11 2011-05-11 线的气相合成
CN201180034310.XA Expired - Fee Related CN102971452B (zh) 2010-05-11 2011-05-11 线的气相合成

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201180034310.XA Expired - Fee Related CN102971452B (zh) 2010-05-11 2011-05-11 线的气相合成

Country Status (6)

Country Link
US (2) US9447520B2 (https=)
EP (1) EP2569466A4 (https=)
JP (2) JP6313975B2 (https=)
KR (1) KR101777894B1 (https=)
CN (2) CN107090593A (https=)
WO (1) WO2011142717A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107090593A (zh) 2010-05-11 2017-08-25 昆南诺股份有限公司 线的气相合成
EP2793997B1 (en) 2011-11-30 2017-12-27 Neuronano AB Nanowire-based devices for light-induced and electrical stimulation of biological cells
TWI480224B (zh) * 2012-02-03 2015-04-11 國立清華大學 半導體奈米線製作方法與半導體奈米結構
WO2013114218A2 (en) * 2012-02-03 2013-08-08 Qunano Ab High-throughput continuous gas-phase synthesis of nanowires with tunable properties
WO2013154490A2 (en) 2012-04-12 2013-10-17 Sol Voltaics Ab Methods of nanowire functionalization, dispersion and attachment
JP6219933B2 (ja) 2012-05-25 2017-10-25 ソル ヴォルテイックス エービーＳｏｌ Ｖｏｌｔａｉｃｓ Ａｂ 同心流反応装置
US9224920B2 (en) 2012-11-23 2015-12-29 Lg Display Co., Ltd. Quantum rod and method of fabricating the same
US9012883B2 (en) 2012-12-21 2015-04-21 Sol Voltaics Ab Recessed contact to semiconductor nanowires
US9574135B2 (en) * 2013-08-22 2017-02-21 Nanoco Technologies Ltd. Gas phase enhancement of emission color quality in solid state LEDs
WO2016071762A1 (en) * 2014-11-07 2016-05-12 Sol Voltaics Ab Shell-enabled vertical alignment and precision-assembly of a close-packed colloidal crystal film
US9951420B2 (en) * 2014-11-10 2018-04-24 Sol Voltaics Ab Nanowire growth system having nanoparticles aerosol generator
EP3260414A1 (en) 2016-06-21 2017-12-27 Sol Voltaics AB Method for transferring nanowires from a fluid to a substrate surface
US20200295356A1 (en) * 2019-03-11 2020-09-17 Nanotek Instruments, Inc. Process for producing semiconductor nanowires and carbon/semiconductor nanowire hybrid materials
EP3822395A1 (en) 2019-11-13 2021-05-19 Fundación Imdea Materiales Nanowires network
CN112820634B (zh) * 2021-01-14 2024-01-16 镓特半导体科技（上海）有限公司 半导体结构、自支撑氮化镓层及其制备方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001155999A (ja) 1999-11-25 2001-06-08 Kanegafuchi Chem Ind Co Ltd 半導体層の積層方法及び該積層装置
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
CN101887935B (zh) 2000-08-22 2013-09-11 哈佛学院董事会 掺杂的拉长半导体,其生长,包含这类半导体的器件及其制造
US7374730B2 (en) 2001-03-26 2008-05-20 National Research Council Of Canada Process and apparatus for synthesis of nanotubes
US20020184969A1 (en) 2001-03-29 2002-12-12 Kodas Toivo T. Combinatorial synthesis of particulate materials
US6872645B2 (en) * 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
US7335908B2 (en) 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
US7534488B2 (en) 2003-09-10 2009-05-19 The Regents Of The University Of California Graded core/shell semiconductor nanorods and nanorod barcodes
US7335344B2 (en) * 2003-03-14 2008-02-26 Massachusetts Institute Of Technology Method and apparatus for synthesizing filamentary structures
CA2522358A1 (en) * 2003-04-04 2004-10-14 Startskottet 22286 Ab Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them
US20070157873A1 (en) * 2003-09-12 2007-07-12 Hauptmann Jonas R Method of fabrication and device comprising elongated nanosize elements
KR100708644B1 (ko) 2004-02-26 2007-04-17 삼성에스디아이 주식회사 박막 트랜지스터, 이를 구비한 평판 표시장치, 박막트랜지스터의 제조방법, 평판 표시장치의 제조방법, 및도너 시트의 제조방법
FI121334B (fi) 2004-03-09 2010-10-15 Canatu Oy Menetelmä ja laitteisto hiilinanoputkien valmistamiseksi
JP2008506254A (ja) * 2004-07-07 2008-02-28 ナノシス・インコーポレイテッド ナノワイヤーの集積及び組み込みのためのシステムおよび方法
FR2876751B1 (fr) 2004-10-15 2007-01-19 Centre Nat Rech Scient Cnrse Appareil pour convertir l'energie des vagues en energie electrique
CN101443265B (zh) 2006-03-08 2014-03-26 昆南诺股份有限公司 在硅上无金属合成外延半导体纳米线的方法
JP4871177B2 (ja) * 2006-03-28 2012-02-08 コリア インスティチュート オブ エナジー リサーチ 超音波振動方式を用いたカーボンナノチューブ合成方法とその装置
US7776760B2 (en) * 2006-11-07 2010-08-17 Nanosys, Inc. Systems and methods for nanowire growth
US8409659B2 (en) 2006-12-01 2013-04-02 GM Global Technology Operations LLC Nanowire supported catalysts for fuel cell electrodes
EP2102899B1 (en) * 2007-01-12 2020-11-11 QuNano AB Nitride nanowires and method of producing such
DE102007010286B4 (de) * 2007-03-02 2013-09-05 Freiberger Compound Materials Gmbh Verfahren zum Herstellen eines Verbindungshalbleiterwerkstoffs, einer III-N-Schicht oder eines III-N-Bulkkristalls, Reaktor zur Herstellung des Verbindungshalbleiterwerkstoffs, Verbindungshalbleiterwerkstoff, III-N-Bulkkristall und III-N-Kristallschicht
KR101345440B1 (ko) * 2007-03-15 2013-12-27 삼성전자주식회사 메조세공 템플릿을 이용한 나노 구조체의 대량 제조방법 및그에 의해 제조된 나노 구조체
KR101475524B1 (ko) * 2008-08-05 2014-12-23 삼성전자주식회사 실리콘 풍부산화물을 포함하는 나노와이어 및 그의제조방법
CN107090593A (zh) 2010-05-11 2017-08-25 昆南诺股份有限公司 线的气相合成

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
S.H.KIM ET AL.: "Understanding ion-mobility and transport properties of aerosol nanowires", 《JOURNAL OF AEROSOL SCIENCE》 *

Also Published As

Publication number Publication date
EP2569466A4 (en) 2013-12-18
US10036101B2 (en) 2018-07-31
KR101777894B1 (ko) 2017-09-13
JP2016121065A (ja) 2016-07-07
KR20130105295A (ko) 2013-09-25
EP2569466A1 (en) 2013-03-20
US20170051432A1 (en) 2017-02-23
JP6313975B2 (ja) 2018-04-18
CN102971452A (zh) 2013-03-13
JP2013526474A (ja) 2013-06-24
WO2011142717A1 (en) 2011-11-17
US9447520B2 (en) 2016-09-20
CN102971452B (zh) 2017-03-29
US20130098288A1 (en) 2013-04-25

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