KR101777894B1 - 와이어의 기상 합성 - Google Patents

와이어의 기상 합성 Download PDF

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KR101777894B1
KR101777894B1 KR1020127031304A KR20127031304A KR101777894B1 KR 101777894 B1 KR101777894 B1 KR 101777894B1 KR 1020127031304 A KR1020127031304 A KR 1020127031304A KR 20127031304 A KR20127031304 A KR 20127031304A KR 101777894 B1 KR101777894 B1 KR 101777894B1
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South Korea
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growth
gas
wires
nanowires
nanowire
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KR20130105295A (ko
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라르스 사무엘손
마그너스 헤우린
마틴 마그누손
크누트 데페르트
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큐나노 에이비
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/62—Whiskers or needles

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020127031304A 2010-05-11 2011-05-11 와이어의 기상 합성 Expired - Fee Related KR101777894B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE1050466-0 2010-05-11
SE1050466 2010-05-11
PCT/SE2011/050599 WO2011142717A1 (en) 2010-05-11 2011-05-11 Gas-phase synthesis of wires

Publications (2)

Publication Number Publication Date
KR20130105295A KR20130105295A (ko) 2013-09-25
KR101777894B1 true KR101777894B1 (ko) 2017-09-13

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Country Status (6)

Country Link
US (2) US9447520B2 (https=)
EP (1) EP2569466A4 (https=)
JP (2) JP6313975B2 (https=)
KR (1) KR101777894B1 (https=)
CN (2) CN107090593A (https=)
WO (1) WO2011142717A1 (https=)

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CN107090593A (zh) 2010-05-11 2017-08-25 昆南诺股份有限公司 线的气相合成
EP2793997B1 (en) 2011-11-30 2017-12-27 Neuronano AB Nanowire-based devices for light-induced and electrical stimulation of biological cells
TWI480224B (zh) * 2012-02-03 2015-04-11 國立清華大學 半導體奈米線製作方法與半導體奈米結構
WO2013114218A2 (en) * 2012-02-03 2013-08-08 Qunano Ab High-throughput continuous gas-phase synthesis of nanowires with tunable properties
WO2013154490A2 (en) 2012-04-12 2013-10-17 Sol Voltaics Ab Methods of nanowire functionalization, dispersion and attachment
JP6219933B2 (ja) 2012-05-25 2017-10-25 ソル ヴォルテイックス エービーＳｏｌ Ｖｏｌｔａｉｃｓ Ａｂ 同心流反応装置
US9224920B2 (en) 2012-11-23 2015-12-29 Lg Display Co., Ltd. Quantum rod and method of fabricating the same
US9012883B2 (en) 2012-12-21 2015-04-21 Sol Voltaics Ab Recessed contact to semiconductor nanowires
US9574135B2 (en) * 2013-08-22 2017-02-21 Nanoco Technologies Ltd. Gas phase enhancement of emission color quality in solid state LEDs
WO2016071762A1 (en) * 2014-11-07 2016-05-12 Sol Voltaics Ab Shell-enabled vertical alignment and precision-assembly of a close-packed colloidal crystal film
US9951420B2 (en) * 2014-11-10 2018-04-24 Sol Voltaics Ab Nanowire growth system having nanoparticles aerosol generator
EP3260414A1 (en) 2016-06-21 2017-12-27 Sol Voltaics AB Method for transferring nanowires from a fluid to a substrate surface
US20200295356A1 (en) * 2019-03-11 2020-09-17 Nanotek Instruments, Inc. Process for producing semiconductor nanowires and carbon/semiconductor nanowire hybrid materials
EP3822395A1 (en) 2019-11-13 2021-05-19 Fundación Imdea Materiales Nanowires network
CN112820634B (zh) * 2021-01-14 2024-01-16 镓特半导体科技（上海）有限公司 半导体结构、自支撑氮化镓层及其制备方法

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US20030089899A1 (en) * 2000-08-22 2003-05-15 Lieber Charles M. Nanoscale wires and related devices
US20040075464A1 (en) * 2002-07-08 2004-04-22 Btg International Limited Nanostructures and methods for manufacturing the same

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US7374730B2 (en) 2001-03-26 2008-05-20 National Research Council Of Canada Process and apparatus for synthesis of nanotubes
US20020184969A1 (en) 2001-03-29 2002-12-12 Kodas Toivo T. Combinatorial synthesis of particulate materials
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US7335344B2 (en) * 2003-03-14 2008-02-26 Massachusetts Institute Of Technology Method and apparatus for synthesizing filamentary structures
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US20070157873A1 (en) * 2003-09-12 2007-07-12 Hauptmann Jonas R Method of fabrication and device comprising elongated nanosize elements
KR100708644B1 (ko) 2004-02-26 2007-04-17 삼성에스디아이 주식회사 박막 트랜지스터, 이를 구비한 평판 표시장치, 박막트랜지스터의 제조방법, 평판 표시장치의 제조방법, 및도너 시트의 제조방법
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US20040075464A1 (en) * 2002-07-08 2004-04-22 Btg International Limited Nanostructures and methods for manufacturing the same

Also Published As

Publication number Publication date
EP2569466A4 (en) 2013-12-18
US10036101B2 (en) 2018-07-31
JP2016121065A (ja) 2016-07-07
KR20130105295A (ko) 2013-09-25
EP2569466A1 (en) 2013-03-20
US20170051432A1 (en) 2017-02-23
JP6313975B2 (ja) 2018-04-18
CN102971452A (zh) 2013-03-13
JP2013526474A (ja) 2013-06-24
WO2011142717A1 (en) 2011-11-17
US9447520B2 (en) 2016-09-20
CN102971452B (zh) 2017-03-29
CN107090593A (zh) 2017-08-25
US20130098288A1 (en) 2013-04-25

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