CN107005203B - 低功率运算跨导放大器 - Google Patents

低功率运算跨导放大器 Download PDF

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Publication number
CN107005203B
CN107005203B CN201580065176.8A CN201580065176A CN107005203B CN 107005203 B CN107005203 B CN 107005203B CN 201580065176 A CN201580065176 A CN 201580065176A CN 107005203 B CN107005203 B CN 107005203B
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CN
China
Prior art keywords
pair
transconductance amplifier
operational transconductance
frequency pole
coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201580065176.8A
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English (en)
Chinese (zh)
Other versions
CN107005203A (zh
Inventor
周曲波
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Qualcomm Inc
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Qualcomm Inc
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Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN107005203A publication Critical patent/CN107005203A/zh
Application granted granted Critical
Publication of CN107005203B publication Critical patent/CN107005203B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
    • H03F1/086—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers with FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H03F3/45188—Non-folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M3/00—Conversion of analogue values to or from differential modulation
    • H03M3/30—Delta-sigma modulation
    • H03M3/458—Analogue/digital converters using delta-sigma modulation as an intermediate step
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/45—Indexing scheme relating to amplifiers the load of the amplifier being a capacitive element, e.g. CRT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45024—Indexing scheme relating to differential amplifiers the differential amplifier amplifying transistors are cascode coupled transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45034—One or more added reactive elements, capacitive or inductive elements, to the amplifying transistors in the differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45058—Indexing scheme relating to differential amplifiers the cascode stage of the differential amplifier comprising a reactive element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45194—At least one active load circuit of the two load circuits in a differential amplifier being realised with a combination of more than one transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45296—Indexing scheme relating to differential amplifiers the AAC comprising one or more discrete capacitive elements, e.g. a transistor coupled as capacitor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45631—Indexing scheme relating to differential amplifiers the LC comprising one or more capacitors, e.g. coupling capacitors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Amplifiers (AREA)
CN201580065176.8A 2014-12-10 2015-10-26 低功率运算跨导放大器 Expired - Fee Related CN107005203B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/566,539 2014-12-10
US14/566,539 US9369099B1 (en) 2014-12-10 2014-12-10 Low power operational transconductance amplifier
PCT/US2015/057366 WO2016093966A1 (en) 2014-12-10 2015-10-26 Low power operational transconductance amplifier

Publications (2)

Publication Number Publication Date
CN107005203A CN107005203A (zh) 2017-08-01
CN107005203B true CN107005203B (zh) 2020-06-26

Family

ID=54477328

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580065176.8A Expired - Fee Related CN107005203B (zh) 2014-12-10 2015-10-26 低功率运算跨导放大器

Country Status (6)

Country Link
US (1) US9369099B1 (enExample)
EP (1) EP3231087B1 (enExample)
JP (1) JP6692815B2 (enExample)
KR (1) KR20170093130A (enExample)
CN (1) CN107005203B (enExample)
WO (1) WO2016093966A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11016519B2 (en) * 2018-12-06 2021-05-25 Stmicroelectronics International N.V. Process compensated gain boosting voltage regulator
JP2020184665A (ja) 2019-05-07 2020-11-12 株式会社村田製作所 送受信回路
CN112865800B (zh) * 2020-12-31 2024-04-02 瑞声科技（南京）有限公司 一种优化OTA的sigma-delta ADC调制器及电子设备
US11736071B2 (en) * 2021-03-22 2023-08-22 Qualcomm Incorporated Wideband amplifier

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5834976A (en) * 1995-11-30 1998-11-10 Sgs-Thomson Microelectronics, S.R.L. Frequency self-compensated operational amplifier
JP2000068761A (ja) * 1998-08-18 2000-03-03 Fujitsu Ltd 半導体増幅回路
CN101615894A (zh) * 2008-06-27 2009-12-30 深圳赛意法微电子有限公司 可调线性运算跨导放大器
US7889004B1 (en) * 2009-09-30 2011-02-15 Analog Devices, Inc. Operational amplifiers with enhanced parameters
CN103929138A (zh) * 2014-04-24 2014-07-16 东南大学 一种低功耗高增益高摆率的运算跨导放大器

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5384501A (en) * 1990-06-15 1995-01-24 Kabushiki Kaisha Toshiba Integration circuit including a differential amplifier having a variable transconductance
US5631598A (en) * 1995-06-07 1997-05-20 Analog Devices, Inc. Frequency compensation for a low drop-out regulator
JP3361021B2 (ja) * 1996-12-16 2003-01-07 株式会社東芝 フィルタ回路
US6114907A (en) * 1998-12-08 2000-09-05 National Semiconductor Corporation Amplifier with dynamic compensation and method
US6191637B1 (en) * 1999-03-05 2001-02-20 National Semiconductor Corporation Switched capacitor bias circuit for generating a reference signal proportional to absolute temperature, capacitance and clock frequency
US7049894B1 (en) 2004-02-27 2006-05-23 Marvell International Ltd. Ahuja compensation circuit with enhanced bandwidth
US7248117B1 (en) 2005-02-04 2007-07-24 Marvell International Ltd. Frequency compensation architecture for stable high frequency operation
US7639078B2 (en) * 2006-07-27 2009-12-29 Linear Technology Corporation Class AB folded-cascode amplifier having cascode compensation
US8237509B2 (en) 2007-02-23 2012-08-07 Qualcomm, Incorporated Amplifier with integrated filter
US7949322B2 (en) * 2007-03-09 2011-05-24 Qualcomm, Incorporated Frequency selective amplifier with wide-band impedance and noise matching
US7760019B2 (en) * 2008-03-04 2010-07-20 Micron Technology, Inc. Adaptive operational transconductance amplifier load compensation
US7646247B2 (en) * 2008-06-02 2010-01-12 Mediatek Singapore Pte Ltd. Ahuja compensation circuit for operational amplifier
US7750837B2 (en) * 2008-08-01 2010-07-06 Qualcomm Incorporated Adaptive bias current generation for switched-capacitor circuits
KR20100021938A (ko) 2008-08-18 2010-02-26 삼성전자주식회사 개선된 위상 마진을 갖는 폴디드 캐스코드 연산 증폭기
IT1392081B1 (it) 2008-12-05 2012-02-09 St Wireless Sa "amplificatore operazionale a trasconduttanza a due stadi di amplificazione"
US8072267B2 (en) * 2009-06-09 2011-12-06 Infineon Technologies Ag Phase margin modification in operational transconductance amplifiers
GB201102562D0 (en) * 2011-02-14 2011-03-30 Nordic Semiconductor Asa Analogue-to-digital converter

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5834976A (en) * 1995-11-30 1998-11-10 Sgs-Thomson Microelectronics, S.R.L. Frequency self-compensated operational amplifier
JP2000068761A (ja) * 1998-08-18 2000-03-03 Fujitsu Ltd 半導体増幅回路
CN101615894A (zh) * 2008-06-27 2009-12-30 深圳赛意法微电子有限公司 可调线性运算跨导放大器
US7889004B1 (en) * 2009-09-30 2011-02-15 Analog Devices, Inc. Operational amplifiers with enhanced parameters
CN103929138A (zh) * 2014-04-24 2014-07-16 东南大学 一种低功耗高增益高摆率的运算跨导放大器

Also Published As

Publication number Publication date
JP2017537556A (ja) 2017-12-14
US20160173044A1 (en) 2016-06-16
JP6692815B2 (ja) 2020-05-13
EP3231087A1 (en) 2017-10-18
US9369099B1 (en) 2016-06-14
KR20170093130A (ko) 2017-08-14
EP3231087B1 (en) 2022-01-05
CN107005203A (zh) 2017-08-01
WO2016093966A1 (en) 2016-06-16

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Granted publication date: 20200626

Termination date: 20211026