CN107003250B - 检验系统及具有增强检测的技术 - Google Patents

检验系统及具有增强检测的技术 Download PDF

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Publication number
CN107003250B
CN107003250B CN201580065269.0A CN201580065269A CN107003250B CN 107003250 B CN107003250 B CN 107003250B CN 201580065269 A CN201580065269 A CN 201580065269A CN 107003250 B CN107003250 B CN 107003250B
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CN107003250A (zh
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S·R·朗格
S·H·黄
A·巴尔
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8845—Multiple wavelengths of illumination or detection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8848—Polarisation of light

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CN201580065269.0A 2014-12-02 2015-11-30 检验系统及具有增强检测的技术 Active CN107003250B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462086596P 2014-12-02 2014-12-02
US62/086,596 2014-12-02
US14/944,124 2015-11-17
US14/944,124 US9599573B2 (en) 2014-12-02 2015-11-17 Inspection systems and techniques with enhanced detection
PCT/US2015/063020 WO2016089779A1 (en) 2014-12-02 2015-11-30 Inspection systems and techniques with enhanced detection

Publications (2)

Publication Number Publication Date
CN107003250A CN107003250A (zh) 2017-08-01
CN107003250B true CN107003250B (zh) 2020-02-28

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US (2) US9599573B2 (enExample)
JP (1) JP6681576B2 (enExample)
KR (1) KR102318273B1 (enExample)
CN (1) CN107003250B (enExample)
IL (1) IL251973A0 (enExample)
SG (1) SG11201704382XA (enExample)
TW (1) TWI652472B (enExample)
WO (1) WO2016089779A1 (enExample)

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US9599573B2 (en) 2014-12-02 2017-03-21 Kla-Tencor Corporation Inspection systems and techniques with enhanced detection
EP3513171B1 (fr) 2016-09-16 2022-04-06 Centre National De La Recherche Scientifique Dispositif optique de caractérisation d'un échantillon
US10082470B2 (en) * 2016-09-27 2018-09-25 Kla-Tencor Corporation Defect marking for semiconductor wafer inspection
US11047806B2 (en) * 2016-11-30 2021-06-29 Kla-Tencor Corporation Defect discovery and recipe optimization for inspection of three-dimensional semiconductor structures
US11662646B2 (en) * 2017-02-05 2023-05-30 Kla Corporation Inspection and metrology using broadband infrared radiation
DE102017205212A1 (de) * 2017-03-28 2018-10-04 Carl Zeiss Smt Gmbh Verfahren zum Detektieren von Partikeln an der Oberfläche eines Objekts, Wafer und Maskenblank
US10444161B2 (en) 2017-04-05 2019-10-15 Kla-Tencor Corporation Systems and methods for metrology with layer-specific illumination spectra
US11016033B2 (en) 2017-12-29 2021-05-25 Goldway Technology Limited Diamond clarity measurement process and system
EP3518041A1 (en) * 2018-01-30 2019-07-31 ASML Netherlands B.V. Inspection apparatus and inspection method
US10937705B2 (en) * 2018-03-30 2021-03-02 Onto Innovation Inc. Sample inspection using topography
US11151711B2 (en) * 2018-06-06 2021-10-19 Kla-Tencor Corporation Cross layer common-unique analysis for nuisance filtering
CN112368541B (zh) * 2018-07-18 2023-06-27 诺威有限公司 半导体器件的时域光学计量和检查
KR102120551B1 (ko) * 2018-09-14 2020-06-09 (주)오로스 테크놀로지 오버레이 측정장치
US10545099B1 (en) 2018-11-07 2020-01-28 Kla-Tencor Corporation Ultra-high sensitivity hybrid inspection with full wafer coverage capability
WO2020194491A1 (ja) * 2019-03-26 2020-10-01 株式会社日立ハイテク 欠陥検査装置
JP2021001770A (ja) * 2019-06-20 2021-01-07 日本電産サンキョー株式会社 外観検査装置および外観検査方法
CN111239161B (zh) * 2020-02-28 2025-03-07 郑州旭飞光电科技有限公司 基板玻璃缺陷检测装置
US11512948B2 (en) * 2020-05-26 2022-11-29 Kla Corporation Imaging system for buried metrology targets
KR102519813B1 (ko) * 2022-10-17 2023-04-11 (주)오로스테크놀로지 오버레이 계측 장치 및 방법과 이를 위한 시스템 및 프로그램

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CN1758022A (zh) * 2004-10-06 2006-04-12 株式会社尼康 缺陷检查方法
JP2010245165A (ja) * 2009-04-02 2010-10-28 Mitsubishi Electric Corp 電力用半導体装置の製造方法および電力用半導体装置の製造装置
TW201233994A (en) * 2010-12-06 2012-08-16 Asml Netherlands Bv Methods and apparatus for inspection of articles, EUV lithography reticles, lithography apparatus and method of manufacturing devices
TW201347159A (zh) * 2012-04-10 2013-11-16 克萊譚克公司 具有硼層之背照式感測器
TW201349688A (zh) * 2012-05-22 2013-12-01 Kla Tencor Corp 使用１９３奈米雷射之固態雷射及檢測系統
CN103531497A (zh) * 2009-01-26 2014-01-22 恪纳腾公司 用于检测晶片上的缺陷的系统和方法
CN103748454A (zh) * 2011-07-12 2014-04-23 科磊股份有限公司 晶片检查

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US6608321B1 (en) * 2001-02-01 2003-08-19 Advanced Micro Devices, Inc. Differential wavelength inspection system
CN1758022A (zh) * 2004-10-06 2006-04-12 株式会社尼康 缺陷检查方法
CN103531497A (zh) * 2009-01-26 2014-01-22 恪纳腾公司 用于检测晶片上的缺陷的系统和方法
JP2010245165A (ja) * 2009-04-02 2010-10-28 Mitsubishi Electric Corp 電力用半導体装置の製造方法および電力用半導体装置の製造装置
TW201233994A (en) * 2010-12-06 2012-08-16 Asml Netherlands Bv Methods and apparatus for inspection of articles, EUV lithography reticles, lithography apparatus and method of manufacturing devices
CN103748454A (zh) * 2011-07-12 2014-04-23 科磊股份有限公司 晶片检查
TW201347159A (zh) * 2012-04-10 2013-11-16 克萊譚克公司 具有硼層之背照式感測器
TW201349688A (zh) * 2012-05-22 2013-12-01 Kla Tencor Corp 使用１９３奈米雷射之固態雷射及檢測系統

Also Published As

Publication number Publication date
KR20170091706A (ko) 2017-08-09
WO2016089779A1 (en) 2016-06-09
US10126251B2 (en) 2018-11-13
IL251973A0 (en) 2017-06-29
TWI652472B (zh) 2019-03-01
CN107003250A (zh) 2017-08-01
US20160153914A1 (en) 2016-06-02
US9599573B2 (en) 2017-03-21
JP6681576B2 (ja) 2020-04-15
US20170176346A1 (en) 2017-06-22
KR102318273B1 (ko) 2021-10-26
SG11201704382XA (en) 2017-06-29
JP2018503244A (ja) 2018-02-01
TW201631315A (zh) 2016-09-01

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