CN107002239B - 真空预先润湿设备及方法 - Google Patents
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- 238000009736 wetting Methods 0.000 title claims description 15
- 238000000034 method Methods 0.000 title claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 55
- 238000007789 sealing Methods 0.000 claims abstract description 16
- 238000007872 degassing Methods 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 16
- 239000007788 liquid Substances 0.000 claims description 15
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 7
- 230000005484 gravity Effects 0.000 claims description 6
- 238000002242 deionisation method Methods 0.000 claims description 5
- 230000007613 environmental effect Effects 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 5
- 238000011068 loading method Methods 0.000 claims description 5
- 238000002791 soaking Methods 0.000 claims description 4
- 230000008676 import Effects 0.000 claims 1
- 238000012423 maintenance Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 9
- 239000007789 gas Substances 0.000 description 6
- 238000009835 boiling Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000012620 biological material Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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Abstract
处理设备可包含面向下的处理腔室,该处理腔室对水平处于固定的锐角角度。平台上的夹具平板可由开启位置至平行位置枢转,其中该平台对处理腔室处于锐角角度,其中该平台与该处理腔室平行。夹具平板可接着线性移动而与处理腔室进入密封接合。可在平台上提供夹具支持器以维持夹具在位置上。水及真空连接进入处理腔室允许真空预先润湿半导体晶片处理。
Description
发明背景
半导体及相似的微尺度器件通常在基板或晶片上制造。将金属或其它导电性材料镀膜于晶片的特征上,例如沟槽及通孔,以形成电性部件及连接。真空预先湿润是使用以提高镀膜品质的预先镀膜步骤,特别是具有高的深宽比的特征。预先润湿通过由特征移除气体及以预先镀膜溶液填满特征来进行。预先镀膜溶液通常为去离子化(DI)水,带有或不带有稀释化合物,例如表面活性剂或酸。
通过在晶片进入镀膜溶液前完全润湿特征,镀膜溶液中的金属离子可更佳的扩散进入水且在镀膜开始时完全填满特征。未润湿特征的常见故障为:镀膜溶液中的金属离子无法到达特征的底部,因为气体气泡卡在特征中。卡住的气体气泡易于造成镀膜的金属夹断(pinch off)而留下在特征底部的空隙而导致缺陷,诸如未连接的电路线。
在新一代的晶片电镀机器中,进入机器后晶片在镀膜夹具中被夹住,且在机器内多数或所有处理步骤期间晶片保持于夹具中,而显现出在预先润湿被夹住晶片中的工程挑战。因此,需要新的预先润湿方法及设备。
发明内容
处理设备可包含:基板处理腔室,该基板处理腔室对水平处于固定的锐角角度。处理腔室可具有面向下方的开口。平台上的夹具平板可由开启水平位置至平行位置枢转,其中该平台对处理腔室处于锐角角度,其中该平台与该处理腔室平行。夹具平板可接着线性向上移动而与处理腔室进入密封接合。可在平台上提供夹具支持器以维持夹具在位置上。
用于预先润湿在夹具中的晶片的方法可包含:将夹具固定于水平夹具平板上,接着枢转夹具平板进入平行位置,其中夹具与以锐角角度定向的基板处理腔室平行。夹具平板可接着线性移动至抵靠基板处理腔室接合或压按,以形成夹具平板及基板处理腔室之间的密封。
降低基板处理腔室中的压力至真空条件,可选地至仅足以避免沸腾的压力,高至约大气压力的一半的压力。可将除气化及去离子化的水由腔室的下端导入腔室,直至晶片被水覆盖,同时将该腔室保持于真空。可接着将该腔室通气至大气压力并将水排出该腔室。腔室可对水平处于锐角角度,而水经由重力流动静态地填满腔室。
附图说明
在附图中,相同的元件符号标示在各视图中相同的元件。
图1为使用于预先润湿夹住的晶片的真空预先润湿设备的前侧及左侧透视图。
图2为示出于图1中的设备的背侧及右侧视图。
图3为示出于图1及图2中的设备的前视图。
图4为示出于图1及图2中的设备的右侧视图。
图5为示出于图1至图3中的平台的透视图。
图6为该设备的左侧视图,该设备处于夹具装载/卸载位置且平台处于开启位置。
图7为该设备的左侧视图,其中平台处于平行位置。
图8为示出于图7中的设备的前视图。
图9为该设备处于处理位置的左侧视图。
图10为示出于图9中的设备的前视图。
图11为示出于图7中的设备的截面图。
图12为包含示出于图1至图11中的预先润湿设备的处理系统的示意性平面视图。
具体实施方式
处理夹具内的晶片提供多种优势。然而,初始将晶片移动进入夹具需要小的但并非不重要的时间量。另一方面,较佳地最小化预先润湿处理的结束及镀膜处理的开始之间的时间间隔,以防止晶片上的特征免于祛湿润(de-wetting)。本设备及方法可提供以下两者好处:晶片夹具内处理晶片,同时也可靠地达到预先润湿的性能。
如图1至图4中所示,真空预先润湿设备20具有腔室平板24,腔室平板24在底座22上被侧柱26支撑。底座22一般可为固定水平结构,诸如处理系统的底板,例如示出于图12中的系统140。如图3中所示,在腔室平板24的下侧中形成面向下方的处理腔室50。处理腔室50或腔室平板24相对于底座22被固定于位置上且以对水平的锐角角度AA定向。角度AA通常可有由10至30或15至25度的范围。
参照图1至图5,平台组件28包含用于接收维持晶片40的晶片夹具38的夹具平板52。枢纽100枢转地将平台组件28附接至升降架(一般指示为72)。升降架72可包含由L状构件形成的升降环74,升降环74在腔室平板24上方附接至升降侧面平板76,升降侧面平板76附接至升降平板78。升降平板78上的枢转致动器102推动或拉动辊57,以与杠杆55滚动接合,杠杆55坚固地经由角撑架54连接至夹具平板52。
枢转致动器102的操作将平台组件28由图1至图4中所示的开启或夹具移交位置枢转至图7中所示的平行位置,其中夹具平板52平行于腔室平板24中的碟状处理腔室50。由平行位置,升降架72可经由升降致动器110线性地朝着腔室平板24进入密封接合,以预先润湿维持于夹具38中的晶片40。
在图3及图5中,夹具支持器(一般于30示出)置中地位于平台组件28上的夹具平板52上。夹具支持器30可包含轴件34上的夹具配件36。弹簧32施加弹力作用以将夹具配件36向下拉动。可操作示出于图8中的夹具致动器60以将夹具配件36向上升高于夹具平板52的平面上方(如图6中所示),以允许维持晶片40的夹具38被装载进入设备20或由设备20移除。夹具致动器可为线性气动、液压、或电性致动器。
最佳地如图8中所示,弹簧架42于跨越平板44的相对侧上以侧臂46附接至夹具平板52的底部表面上。使用附接至跨越平板44的每个夹具致动器60的活塞或下端及附接至夹具平板52的底部表面的每个夹具致动器60的上端,安置夹具致动器60于跨越平板44的相对侧处。轴件34的下端附接至跨越平板44,其中轴件34经由跨越平板44中的余隙(clearance)开口向上延伸。
绕着轴件34的弹簧32推动跨越平板44向下且远离夹具平板52,夹具平板52拉动夹具配件36向下。夹具38经由夹具致动器60的操作以及经由弹簧32固定地维持向下于夹具平板52上。为了夹具装载/卸载而释放夹具38,将夹具致动器60反向以将夹具38向上上升离开夹具平板52,如图6中所示,以允许夹具被机械手拾起。
暂时参照图5及图11,安置夹具平板52上的平台密封58以密封夹具平板52紧靠腔室平板24。安置可选的内密封56以密封夹具内部面积以隔绝处理腔室50。如图3中所示,可形成腔室50为腔室平板24的底部表面中的碟状开口。图3中以虚线标示的腔室液体入口64及液体排放65被安置于流动扩散器62的后面,流动扩散器62帮助提供平稳静态流动的水进入腔室50。阀体112提供真空及压力等化(equalization)口以进入腔室50,位于或靠近腔室的最高点。
如图1及图2中所示,在腔室平板24的顶部上支撑水除气化槽80。水供应线82连接至水除气化槽80内部的喷洒喷嘴90。水除气化槽80上的真空口84连接至真空源。压力等化线86连接至处理腔室50中的等化口70,使得水除气化槽80中的压力保持等于处理腔室50中的压力。水除气化槽80的下端经由阀66连接至腔室液体入口64。可提供水平感应器88以量测水除气化槽80内的液体水平面。阀体112控制腔室中的真空。
图12示出使用于晶片处理系统140中的真空预先润湿设备20的实施例。系统140可包含工厂界面142,其中维持晶片40的容器144停驻且开启以用于装载未处理的晶片进入系统140且由系统移除处理晶片。典型地,支援机械手150可将晶片由工厂界面142移动至支撑模块146,于支撑模块146中晶片被安置进入夹具38。接着移动夹具38进入预先润湿设备并经过预先润湿处理。接着经由处理机械手152移动预先润湿的晶片进入镀膜腔室154。
在预先润湿设备20的操作的一个实施例中,支援机械手150移动乘载或封闭晶片的夹具38进入夹具平板52上方的位置。夹具配件36在图6中所示的上方位置。夹具配件36接合夹具上的互补配件以允许夹具支持器30固定地接合夹具。将夹具致动器60反向以将夹具38向下拉动于夹具平板52上,如图3及图4中所示。
参照图7及图8,向外延伸枢转致动器102推动辊57抵靠杠杆55,杠杆55枢转整个平台组件28绕着枢纽100进入图7中所示的平行位置。接着收起升降致动器110而拉动夹具38及夹具平板52向上进入图9或图10中所示的处理位置。图7中介于平行位置及关闭或处理位置之间的线性移动DD一般为1至4厘米。随着夹具平板52向上移动与腔室平板24进入接合,在它们之间压缩平台密封58,密封了处理腔室50。均匀地压缩平台密封58而不切削或洗涤,因为密封移动为纯线性且不带有旋转动作。
控制(经由系统电子控制器)阀体112以连接处理腔室50至真空源。处理腔室中及晶片的特征中的空气被排出。
水除气化槽80也连接至真空源。将水喷洒离开喷洒喷嘴90。分解的气体被排出且除气化水收集于水除气化槽80中。阀66开启允许处理腔室50被除气化水填满。水经由重力流动进入处理腔室50,直至晶片40被覆盖。可使用重力流动,因为水除气化槽80位于处理腔室50上方,且水除气化槽80及处理腔室50的压力经由压力等化线86及阀体112的操作而等化。重力流动降低进入处理腔室的水的紊流。接着将处理腔室50通气至环境压力且将水排放离开处理腔室。可关闭等化线以维持水除气化槽80中的真空。
将升降致动器110反向以将夹具拉动离开处理腔室并回到如图7中所示的平行位置。将枢转致动器102反向而旋转平台组件回到图1至图4中所示的移交位置。机械手移除维持预先润湿晶片的夹具。可经由示出于图12中的处理机械手152来移动仍在夹具中的预先润湿晶片进入镀膜腔室154。
在处理腔室中紊乱的水流动可导致在大量流体润湿晶片表面之前溅洒于晶片表面上的小水滴。这可造成缺陷。结果,进入处理腔室的水较佳地以平稳静态的方式经由重力流动及阀控制来覆盖晶片。在未除气或不充分除气的水中的分解氧可成核且造成空气气泡及溅洒。水除气化槽80被使用为水除气器且避免这些缺陷。将水除气化槽垂直安置于处理腔室50上方,以允许静态流动进入处理腔室50。水除气化槽可连续操作,使得连续获得除气化水。
在一些应用中,可经由在水除气化槽80中将水的自由表面积暴露于真空而使用水除气化来省略喷洒喷嘴90。然而,喷洒一般更有效率,因为在小水滴进入大量流体前将个别小水滴的表面积暴露于真空。可抽空水除气化槽80至不同于处理腔室50的压力。
针对300mm直径的晶片,最小化处理腔室50的容积至例如0.5至1.5升,使得需要填满及排放处理腔室的时间最小化。在夹具中的晶片密封件130上支撑晶片50。晶片及夹具的背侧暴露于真空,以避免能够过度加压于晶片及损坏晶片的压力差。高于处理腔室50的最大供水水平面的腔室平板中晶片等化穿孔维持了晶片两侧上的相等压力。自阀体112的晶片等化线连接至该穿孔。
在图4中处理腔室以固定锐角角度AA倾斜,以允许跨晶片表面容易的填满及排放。水经由位于处理腔室中的最低点的腔室液体入口64及液体排放65进入及离开,以允许流体平稳清扫及向下排出晶片表面。阀体112位于处理腔室的最高点,以最小化任何可满出及吸入真空系统的水。为了帮助保持处理腔室容积于最小值,可直接装设控制流体或气体流动进入或离开处理腔室的阀至腔室平板24,消除阀及处理腔室之间的任何配件或线。腔室平板24可为固定的,而所有流体连接附接至腔室平板24。
在预先润湿处理期间,可于室温及刚超过水沸点的压力下(一般约12至50torr)操作处理腔室50。在晶片被水覆盖后,可保持真空上至30、60、或120秒,或更长,以将卡住的气体分解成去离子化及除气化的水。在一些应用中,根据特征材料及特性,可使用剧烈的沸腾以激动晶片特征中的水且将空气由这些特征排除。
也可使用压力循环,其中晶片在处理腔室50内覆盖于水中,处理腔室中的压力快速地循环。此可通过降低压力至最小值来执行,通常以仅足以避免沸腾的公称压力执行。水被导入处理腔室以完全覆盖晶片。接着将处理腔室快速地通气至环境压力。接着处理腔室快速地返回真空条件,且处理腔室接着再次快速地通气。此压力循环可重复2、3、4、或5次。接着排放水且由设备20移除夹具。
如此处所使用,“连接”意指功能上的联接,而不必为毗连和/或机械上的附接。相对于液体容纳或处理元件,“连接”意指管道连通,亦即,使用软管、线、或管子直接或间接乘载元件之间的液体。“水平”意指线或平面由容器中的液体形成。“上方”及“下方”相对于重力方向具有其传统涵义。
Claims (15)
1.一种处理设备,包括:
底座;
腔室平板,所述腔室平板对所述底座处于固定锐角角度,所述腔室平板包含基板处理腔室;
夹具平板,所述夹具平板位于平台上,所述平台由开启位置至关闭位置枢转,其中于所述开启位置时所述平台对所述腔室平板处于锐角角度,其中于所述关闭位置时所述平台与所述腔室平板平行;
夹具支持器,所述夹具支持器位于所述平台上,所述平台可由装载/卸载位置移动至维持位置,其中于所述装载/卸载位置时可将晶片夹具装载于所述平台上或由所述平台移除,其中于所述维持位置时所述夹具被固定于所述平台上。
2.如权利要求1所述的设备,所述设备具有:在所述腔室的第二侧垂直上方的所述腔室的第一侧、及位于所述腔室的所述第一侧处可连接至真空源的真空口、及位于所述腔室的所述第二侧处的液体入口及液体排放。
3.如权利要求2所述的设备,进一步包含:液体除气器,所述液体除气器被支撑于所述腔室平板上且连接至所述液体入口,所述液体除气器包含槽、连接至所述槽的真空源、在所述槽中连接至液体源的喷洒喷嘴、及连接所述槽至所述处理腔室的压力等分线。
4.如权利要求3所述的设备,所述槽位于所述处理腔室垂直上方。
5.如权利要求1所述的设备,进一步包含:至少一个致动器,以用于线性地移动所述平台而与所述腔室平板进入密封接合。
6.如权利要求1所述的设备,所述腔室具有上方表面,所述上方表面以对水平10至30度的角度定向。
7.如权利要求1所述的设备,所述处理腔室具有0.5至2.5升的容积。
8.如权利要求1所述的设备,进一步包含:当紧靠所述腔室平板而密封所述平台时,位于所述平台上紧靠所述腔室平板而密封的真空密封件,及紧靠所述夹具而密封的夹具密封件。
9.如权利要求1所述的设备,所述夹具支持器包含:于轴件上的夹具配件、促使所述夹具配件进入所述维持位置的弹簧、及夹具致动器,可操作所述夹具致动器以移动所述夹具配件进入所述装载/卸载位置以对抗所述弹簧的力量。
10.一种真空预先润湿设备,包括:
底座;
腔室平板,所述腔室平板具有基板处理腔室,所述基板处理腔室以一固定角度相对于所述底座定向;
夹具平板,所述夹具平板位于平台组件上;
枢转致动器,所述枢转致动器连接至所述平台组件以用于将所述平台组件由第一位置枢转至第二位置,其中于所述第一位置时所述夹具平板对所述处理腔室处于锐角角度,其中于所述第二位置时所述夹具平板与所述处理腔室平行;以及
至少一个升降致动器,所述至少一个升降致动器附接至所述平台组件及至所述腔室平板,以用于线性地移动所述夹具平板而与所述腔室平板进入密封接合。
11.如权利要求10所述的设备,所述枢转致动器被支撑于所述平台组件上。
12.一种用于在夹具中预先润湿晶片的方法,所述方法包括以下步骤:
将所述夹具固定于水平夹具平板上;
枢转所述夹具平板进入平行位置,其中所述夹具与基板处理腔室平行,所述基板处理腔室以一锐角角度定向;
线性地移动所述夹具平板而与所述基板处理腔室进入接合,以形成所述夹具平板与所述基板处理腔室之间的密封;
降低所述基板处理腔室中的压力至低于环境压力;
由所述腔室的下端导入除气化去离子化的水进入所述腔室,直至所述晶片被水覆盖,同时将所述腔室保持于低于环境压力;
将所述腔室通气至环境压力;
将所述水排出所述腔室;
线性地移动所述夹具平板远离所述基板处理腔室;以及
枢转所述夹具平板回到水平。
13.如权利要求12所述的方法,进一步包含以下步骤:在所述腔室内循环所述压力。
14.如权利要求12所述的方法,进一步包含以下步骤:在所述腔室中经由重力流动导入所述水。
15.如权利要求12所述的方法,进一步包含以下步骤:经由致动器或作用于夹具配件上的弹簧,将所述夹具与所述夹具配件接合且维持所述夹具于所述夹具平板上。
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