200816358 九、發明說明 【發明所屬之技術領域】 本發明是關於可對半導體晶圓或玻璃基板等各種基板 加以吸附保持的基板保持裝置。 【先前技術】 已知有可將玻璃基板載置在工作台上，利用真空吸附 使玻璃基板固定在工作台上，然後移動窄縫噴嘴將塗液塗 佈在基板表面上的窄縫塗佈設備（例如參照專利文獻！） 。於該已知的窄縫塗佈設備中，使用附帶真空吸附的工作 台，利用真空吸附使需要處理的玻璃基板固定在工作台上 。接著，在玻璃基板被真空吸附在工作台上的狀態下移動 窄縫噴嘴執行塗佈處理。於基板表面塗佈中持續進行真空 抽取作業，在塗佈處理結束後就停止真空抽取，導入吹掃 氣體，從工作台卸下基板。 〔專利文獻1〕日本特開2002-79163號公報 【發明內容】 〔發明欲解決之課題〕 使用上述利用真空吸附使玻璃基板保持在工作台上的 基板保持裝置之窄縫塗佈設備中，因是在基板和工作台之 間作用有強大的真空吸附力，所以玻璃基板幾乎是於完全 固定在工作台上的狀態下執行塗佈處理。然而，在使用習 知的基板保持裝置塗佈完成後，於形成在基板表面的塗膜 -5- 200816358 表面，會產生有和工作台的吸附孔及吸附孔連通 同一形狀的不均勻問題。當塗膜產生不均勻時， 行的處理就無法形成正確的電路圖案，導致妨礙 〇 此外，於窄縫塗佈設備中，從改善生產率的 ，縮短生產間隔時間也是重要的課題。但是，爲 膜產生不均勻，需要將形成在工作台的吸附孔直 較小的同時溝槽的寬度也要設定成較窄，因此真 需要花費長時間，以致妨礙到生產間隔時間的縮 上，爲了抑制不均勻產生，也有運用較弱真空壓 但如此一來真空吸附勢必較花費時間，導致妨礙 隔的縮短。 〔用以解決課題之手段〕 本發明者針對基板上塗膜形成的不均勻進行 驗及解析的結果，得知在工作台上吸附保持著基 的溫度分佈是造成塗膜不均勻的原因。即，將基 附在工作台上時，基板和工作台的表面是形成緊 板和工作台的表面是直接接觸著。因此，當基板 之間有溫度差時，執行從基板側直接傳至工作台 作台側直接傳至基板側的直接熱傳導。其結果， 板的溫度比工作台的溫度還高時，於基板和工作 觸的部位是會產生有從基板側直接傳至工作台側 ’造成該部位的基板溫度降低。 用的溝槽 在後續執 到微細化 觀點來看 了抑制塗 徑設定成 空抽取就 短。再加 的手法， 到生產間 了各種實 板時產生 板真空吸 貼，而基 和工作台 側或從工 例如當基 台直接接 的熱傳導 -6- 200816358 另一方面，工作台的吸附孔或溝槽形成部位 空狀態，並沒有熱傳達媒體，因此基板和工作台 不產生熱傳導。其結果，基板和工作台之間就會 差，例如即使是在基板的溫度比工作台的溫度還 還是不會產生從基板側傳至工作台側的熱移傳達 部位的溫度是維持在比周圍溫度還高的狀態，導 佈形成。該溫度分佈會傳達至基板相反側的表面 相反側表面上形成的塗膜出現蒸發速度差，以致 不均勻。 本發明是基於上述解析結果而爲的發明，其 對基板進行指定處理的期間不會有溫度分佈形成 即，本發明是針對基板吸附保持用的載置面 數吸附口的基板保持裝置，構成爲具備有：於一 和上述載置部的吸附孔連通，於另一端側形成和 通的真空閥；於一端側形成和上述載置部的吸附 於另一端側形成和大氣連通的大氣開放閥；及上 和上述大氣閥的開閉控制用的閥控制裝置。 不過，當基板被吸附在工作台上時，基板是 在工作台上，在工作台和基板之間作用有強大的 由於該緊貼力的作用，即使工作台的吸附孔轉換 態，還是能夠將基板維持成緊貼在工作台上的狀 ，本發明是在檢測出吸附孔的真空度達到指定真 將大氣閥轉換成開放狀態，使吸附孔從真空狀態 氣狀態，於大氣狀態下執行塗佈等各種處理。指 是成爲真 之間幾乎 形成溫度 高的狀況 ，造成該 致溫度分 ，使基板 塗膜產生 構成爲在 〇 開口有複 端側形成 真空源連 孔連通， 述真空閥 牢固緊貼 緊貼力。 成大氣狀 態。於是 空度後， 轉換成大 定處理結 200816358 束後，將大氣閥從開放狀態轉換成關閉狀態的同時將吹掃 氣體閥轉換成開放狀態使基板從工作台剝離。 本發明是在基板被吸附保持在工作台上後，將連通吸 附孔及吸附孔間的溝槽轉換成大氣狀態，於大氣狀態下執 行各種處理，因此基板和工作台之間即使有溫度差，還是 能夠防止基板產生溫度分佈造成的不利狀況。 採用本發明的基板保持裝置時，能夠消除基板和工作 台之間因溫度差存在造成的不利狀況，所以就能夠將吸附 孔的直徑形成較大的同時還可將吸附孔連通用的溝槽寬度 形成較大。其結果，能夠縮短真空抽取所需時間，能夠達 到縮短生產間隔時間的效果。 此外，使用本發明相關裝置的基板保持方法，例如包 括：上述載置部載置有基板時，對上述吸附孔加以真空抽 取的步驟；當檢測出上述吸附孔達到指定真空狀態時就停 止真空抽取的步驟；及對上述吸附孔加入大氣開放的步驟 〇 本發明的基板處理裝置，因是在工作台的吸附孔維持 成大氣狀態的期間對基板執行指定處理，所以基板和工作 台之間即使有溫度差，兩者還是隔著熱傳達效率差的空氣 ，因此可確保大致均勻的熱流入在工作台和基板之間，能 夠防止溫度分佈形成在基板造成的不利狀況。 〔發明效果〕 本發明雖是利用真空吸附使基板吸附保持在工作台上 -8- 200816358 ，但，於指定處理執行期間工作台的吸附孔是成爲大氣狀 態，所以當本發明應用在塗佈裝置時，基板不會形成有溫 度分佈，因此能夠有效防止溫度分佈造成的塗佈不均，再 加上還能夠縮短生產間隔時間。 【實施方式】 〔發明之最佳實施形態〕 以下，根據附圖對本發明的最佳實施例進行說明。第 1 ( A )圖爲本發明相關的基板保持裝置要部放大剖面圖 ，第1(B)圖爲基板載置面局部放大平面圖，本例是針 對使用窄縫噴嘴在玻璃基板上加以塗佈的窄縫塗佈設備之 基板保持裝置進行說明。 於基板保持裝置的載置部即工作台1上載置基板2， 利用真空吸附將基板2吸附保持在工作台1上。於工作台 1的基板載置面，形成有彼此正交的多數溝槽1 a，於各溝 槽的交點形成有二維矩陣狀的吸附孔1 b。吸附孔的直徑 是形成比習知吸附孔徑還大，例如是設定在1 .0mm〜 3.0mm範圍。此外，各吸附孔間連通用的溝槽寬度也是形 成比習知溝槽寬度（0.2mm )還寬，例如是設定在〇.5mm 以上。如上述，藉由將吸附孔的直徑及吸附孔連通用的溝 槽寬度設定成較大，能夠縮短吸附孔真空抽取時達到指定 真空度的所需時間，能夠縮短生產間隔時間。 工作台1是形成有溝槽1 a及吸附孔1 b連通用的流路 孔1 c，該流路孔1 c是透過密封構件3連接於導管4。導 -9- 200816358 管4是分岐爲3支，透過真空閥5連通於真空源，透過大 氣開放閥6連通於大氣，透過吹掃氣體閥7連通於吹掃氣 體源。3個閥5〜7是利用來自於閥控制裝置8供應的控 制訊號加以開閉控制。另，控制裝置8並不只是執行閥的 開閉控制而已，還可執行塗佈機構等其他要素的控制。又 ，於流路孔1 c設有真空檢測手段（未圖示），可對吸附 孔及溝槽是否爲指定真空狀態加以檢測，將其檢測訊號供 應至閥控制裝置8。 當大氣開放閥6及吹掃氣體閥7維持成關閉狀態，將 真空閥5從關閉狀態轉換成開放狀態時，工作台的溝槽 1 a及吸附孔1 b就會從大氣狀態慢慢轉換成真空狀態。當 吸附孔及溝槽轉換成真空狀態時，大氣壓會讓基板的表面 和工作台的表面形成緊貼，彼此作用有強大的緊貼力。針 對該緊貼力，本發明進行了各種實驗的結果，得知當吸附 孔成爲指定真空狀態時，即使將吸附孔及溝槽轉換成大氣 狀態’但藉由基板和工作台之間彼此作用的緊貼力，還是 能夠讓基板牢固緊貼在工作台上，基板不會因外力而位移 。根據該實驗結果，本發明是吸附孔及溝槽轉換成一定的 真空狀態使基板緊貼在工作台上後，再將真空閥轉換成關 閉狀態的同時對大氣開放閥加以開放。接著，使工作台的 吸附孔及溝槽轉換成大氣狀態，於基板是緊貼在工作台上 的狀態下執行各種處理。因此，處理中工作台的吸附孔及 溝槽是成爲充滿空氣的狀態，所以於該等部位，就可確保 與產生在基板表面和工作台之間的熱傳導大致同等的熱傳 -10- 200816358 導，消除不被期望的溫度分佈形成在基板造成的 〇 第2爲基板和工作台之間的熱傳導形態說明 (A)圖爲表示一邊執行真空抽取一邊利用窄縫 完成塗佈時的熱傳導狀態模式圖，第2 ( B )圖 附孔轉換成真空狀態後在與大氣成連通的狀態下 處理時的熱傳導狀態模式圖。 如習知的基板保持裝置，一邊執行真空抽取 塗佈處理時，因吸附孔及溝槽內是成爲真空狀態 第2 ( A )圖所示，於該等部位在基板和工作台 期間是沒有熱傳達媒體存在，形成爲局部性隔熱 此，基板和工作台之間即使有溫度差，但於基板 之間幾乎是不執行熱的授受。另一方面，於基板 彼此成緊貼的部位是成爲容易產生熱傳導的狀態 和工作台之間有溫度差時，會因應溫度差產生熱 該熱的流入，例如當基板的溫度比工作台的溫度 產生從工作台往基板側的熱流入，使基板和工作 的部位溫度變高。另一方面，於工作台的吸附孔 成部位幾乎不產生熱的流入，因此該部位的溫度 結果就導致基板產生溫度分佈。 基板所產生的溫度分佈被傳達至形成在基板 膜1 〇，於塗膜1 0照樣形成溫度分佈，該溫度分 造成塗膜中的溶劑蒸發速度不同，其結果就產生 句 0 不利狀況 圖，第2 塗佈設備 爲表不吸 進行塗佈 一邊進行 ，所以如 成緊貼的 狀態。因 和工作台 和工作台 ，當基板 的流入。 還低時， 台成緊貼 及溝槽形 不變，其 2上的塗 佈的原故 塗膜不均 -11 - 200816358 另一方面，如第2 ( B )圖所示，當吸附孔爲大氣狀 態時，吸附孔及溝槽充滿空氣，再加上基板2和工作台1 上面之間有空氣進入，形成熱傳達受到阻礙的狀態。因此 ，基板和工作台之間即使有溫度差但熱難以傳達。例如： 工作台的溫度比基板的溫度還高時，熱會透過空氣欲從工 作台側傳往基板側，但因有空氣層介於兩者之間所以是進 行幾乎均等熱的傳達，因此就可消除基板產生溫度分佈造 成的不利狀況。 根據上述解析結果，本發明是將基板真空吸附在工作 台上後，使吸附孔轉換成大氣狀態，在該狀態下執行塗液 的塗佈等各種處理，消除因基板和工作台之間的溫度差造 成的不利狀況。 第3圖是表示本發明的基板保持裝置搭載在窄縫塗佈 設備時3個閥的控制時間圖。於待機狀態，真空閥5、大 氣開放閥6及吹掃氣體閥4是設定成關閉狀態。 當工作台1上載置有基板2時，控制裝置8是控制真 空閥5從關閉狀態轉換成開放狀態。該期間約3秒時間就 可達到指定真空度。 當真空檢測手段檢測出吸附孔內的真空度轉換成預定 的真空狀態時，約於1秒後大氣開放閥6就會從關閉狀態 轉換成開放狀態。幾乎是同時窄縫噴嘴會開始移動，執行 約1 5秒時間的塗佈處理。 塗佈處理完成時，大氣開放閥6是從開放狀態轉換成 關閉狀態。幾乎同時，吹掃氣體閥7是從關閉狀態轉換成 -12- 200816358 開放狀態，使玻璃基板從工作台剝離。其次，昇降銷會動 作，使基板完全離開工作台，由機器人的抓取處理搬運至 別處，結束處理。 另，基板塗佈處理之前的先行各種處理例如從窄縫噴 嘴往起動輥的預備噴出或焊點的形成等，可在真空抽取中 (真空閥爲開放狀態）或者是在大氣開放閥轉換成開放狀 態前進行處理。 第4圖爲表示另一實施例相關閥控制動作的時間圖， 該實施例是構成大氣開放閥6的開放狀態後半部和吹掃氣 體閥7的開放狀態爲同步控制。如此一來，可更加縮短生 產間隔時間。 本發明並不限定於上述的實施例，是可加以各種的變 形或變更。例如：於上述的實施例中，針對本發明的基板 保持裝置搭載在窄縫塗佈設備時的例子進行說明，但也可 應用在會因基板和工作台的溫度差產生不利狀況的各種基 板處理裝置。 此外，上述的實施例是將大氣開放閥從開放狀態轉換 成關閉狀態後再將吹掃氣體閥從關閉狀態轉換成開放狀態 ，但也可在大氣開放閥維持成開放狀態的狀態下將吹掃氣 體閥轉換成開放狀態。 【圖式簡單說明】 第1 ( A )圖爲本發明相關的基板保持裝置要部放大 剖面圖，第1 (B)圖爲基板載置面局部放大平面圖。 -13- 200816358 第2 ( A )圖及第2 ( B )圖爲基板和工作台之間的熱 傳導形態說明圖。 第3圖爲表示閥控制動作的時間圖。 第4圖爲表示另一實施例相關閥控制動作的時間圖。 【主要元件符號說明】 1 :工作台 2 :基板 3 :密封構件 4 :導管 5 :真空閥 6 :大氣開放閥 7 :吹掃氣體閥 8 :閥控制裝置 -14-[Technical Field] The present invention relates to a substrate holding device capable of adsorbing and holding various substrates such as a semiconductor wafer or a glass substrate. [Prior Art] A slit coating apparatus capable of mounting a glass substrate on a table, fixing the glass substrate to a table by vacuum suction, and then moving the slit nozzle to apply the coating liquid on the surface of the substrate is known. (For example, refer to the patent literature!). In the known slit coating apparatus, a glass substrate to be processed is fixed to a table by vacuum suction using a table with vacuum suction. Next, the coating process is performed by moving the slit nozzle in a state where the glass substrate is vacuum-adsorbed on the stage. The vacuum extraction operation is continued during the surface coating of the substrate, the vacuum extraction is stopped after the coating process is completed, the purge gas is introduced, and the substrate is removed from the table. [Patent Document 1] JP-A-2002-79163 SUMMARY OF INVENTION [Problem to be Solved by the Invention] The narrow-slot coating apparatus of the substrate holding device that holds the glass substrate on the table by vacuum suction is used. Since a strong vacuum adsorption force acts between the substrate and the stage, the glass substrate is subjected to a coating process almost in a state of being completely fixed on the stage. However, after the application of the conventional substrate holding device is completed, unevenness of the same shape as that of the adsorption holes and the adsorption holes of the table is generated on the surface of the coating film -5 - 200816358 formed on the surface of the substrate. When the coating film is uneven, the processing of the film cannot form a correct circuit pattern, which is a hindrance. In addition, in the slit coating apparatus, it is also an important subject to improve the productivity and shorten the production interval. However, if the film is uneven, it is necessary to set the width of the groove formed on the table to be small while the width of the groove is also set to be narrow, so that it takes a long time to hinder the shrinkage of the production interval. In order to suppress uneven generation, it is also possible to use a weak vacuum pressure, but as a result, vacuum adsorption tends to take time, resulting in hindering the shortening of the separation. [Means for Solving the Problems] As a result of the unevenness test and analysis of the coating film formed on the substrate, the inventors have found that the temperature distribution of the substrate adsorbed and held on the stage causes the coating film to be uneven. That is, when the base is attached to the table, the surfaces of the substrate and the table are in direct contact with the surface forming the plate and the table. Therefore, when there is a temperature difference between the substrates, direct heat conduction from the substrate side to the stage side directly to the substrate side is performed. As a result, when the temperature of the board is higher than the temperature of the stage, there is a possibility that the substrate and the contact portion are directly transferred from the substrate side to the stage side, causing the substrate temperature of the portion to decrease. The groove to be used is short in view of the subsequent miniaturization. In addition, when the various solid plates are produced, a vacuum suction is generated, and the heat conduction on the base and the work side or directly from the work, for example, when the base is connected, is on the other hand, the adsorption hole of the workbench or The groove forming portion is in an empty state, and there is no heat transfer medium, so the substrate and the table do not generate heat conduction. As a result, there is a difference between the substrate and the stage. For example, even if the temperature of the substrate is higher than the temperature of the stage, the temperature of the heat transfer portion from the substrate side to the table side is not maintained. The guide cloth is formed in a state where the temperature is still high. This temperature distribution is transmitted to the surface on the opposite side of the substrate. The coating film formed on the opposite side surface exhibits a difference in evaporation speed, resulting in unevenness. The present invention is based on the above-described analysis result, and the substrate holding device for the substrate surface adsorption holding port is not formed in the period in which the substrate is subjected to the designation process. a vacuum valve that communicates with the adsorption hole of the mounting portion and that opens and closes at the other end side; and an open air valve that is formed on the one end side and that is attached to the other end side of the mounting portion and that communicates with the atmosphere; And a valve control device for opening and closing the above-mentioned atmospheric valve. However, when the substrate is adsorbed on the workbench, the substrate is on the workbench, and there is a strong interaction between the workbench and the substrate due to the adhesive force, even if the adsorption hole of the workbench is in a transition state, The substrate is maintained in a state of being closely attached to the workbench. In the present invention, when the degree of vacuum of the adsorption hole is detected, the atmospheric valve is converted into an open state, and the adsorption hole is subjected to coating from the vacuum state to the atmospheric state. And so on. It means that the temperature is almost high between the two, causing the temperature to be divided, so that the substrate coating film is formed to form a vacuum source connection hole at the end side of the opening of the crucible, and the vacuum valve is firmly adhered to the adhesion force. In an atmospheric state. After the vacancy, it is converted into a large processing knot. After the 200816358 bundle, the atmospheric valve is switched from the open state to the closed state, and the purge gas valve is switched to the open state to peel the substrate from the table. According to the present invention, after the substrate is adsorbed and held on the stage, the groove connecting the adsorption hole and the adsorption hole is converted into an atmospheric state, and various processes are performed in an atmospheric state, so that even if there is a temperature difference between the substrate and the table, It is also possible to prevent an adverse situation caused by the temperature distribution of the substrate. According to the substrate holding device of the present invention, it is possible to eliminate an unfavorable situation caused by a temperature difference between the substrate and the stage, so that the diameter of the adsorption hole can be made large while the groove width for communicating the adsorption hole can be made. The formation is larger. As a result, the time required for vacuum extraction can be shortened, and the effect of shortening the production interval can be achieved. Further, the substrate holding method using the apparatus according to the present invention includes, for example, a step of vacuum-extracting the adsorption hole when the substrate is placed on the mounting portion, and stopping the vacuum extraction when detecting that the adsorption hole reaches a specified vacuum state. And a step of opening the adsorption hole to the atmosphere. The substrate processing apparatus of the present invention performs a designation process on the substrate while the adsorption hole of the stage is maintained in an atmospheric state, so that even if there is a substrate between the substrate and the table The temperature difference is both that the air is inefficiently transmitted through the heat, so that a substantially uniform heat can be ensured to flow between the table and the substrate, and the temperature distribution can be prevented from being formed on the substrate. [Effect of the Invention] In the present invention, the substrate is adsorbed and held on the table by vacuum adsorption to -8 to 200816358. However, since the adsorption holes of the table are in an atmospheric state during the execution of the designated process, the present invention is applied to the coating device. When the substrate is not formed with a temperature distribution, coating unevenness due to temperature distribution can be effectively prevented, and the production interval can be shortened. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. 1(A) is an enlarged cross-sectional view of a main portion of a substrate holding device according to the present invention, and FIG. 1(B) is a partially enlarged plan view showing a substrate mounting surface, which is applied to a glass substrate by using a slit nozzle. The substrate holding device of the slit coating apparatus will be described. The substrate 2 is placed on the stage 1 which is the mounting portion of the substrate holding device, and the substrate 2 is adsorbed and held on the table 1 by vacuum suction. On the substrate mounting surface of the stage 1, a plurality of grooves 1a orthogonal to each other are formed, and a two-dimensional matrix-shaped adsorption hole 1b is formed at the intersection of the grooves. The diameter of the adsorption hole is formed larger than the conventional adsorption pore size, and is set, for example, in the range of 1.0 mm to 3.0 mm. Further, the groove width for communicating between the adsorption holes is also formed to be wider than the conventional groove width (0.2 mm), and is set to, for example, 〇.5 mm or more. As described above, by setting the diameter of the adsorption hole and the groove width for the communication hole to be large, the time required to reach the specified degree of vacuum during the vacuum extraction of the adsorption hole can be shortened, and the production interval can be shortened. The table 1 is a flow path hole 1c for forming a groove 1a and a suction hole 1b for communication, and the flow path hole 1c is connected to the pipe 4 through the sealing member 3. Guide -9- 200816358 The tube 4 is divided into three branches, communicates with the vacuum source through the vacuum valve 5, communicates with the atmosphere through the atmosphere open valve 6, and communicates with the purge gas source through the purge gas valve 7. The three valves 5 to 7 are opened and closed by a control signal supplied from the valve control unit 8. Further, the control device 8 does not only perform the opening and closing control of the valve, but also controls other elements such as the coating mechanism. Further, a vacuum detecting means (not shown) is provided in the flow path hole 1c, and whether or not the adsorption hole and the groove are in a specified vacuum state can be detected, and the detection signal is supplied to the valve control device 8. When the atmosphere opening valve 6 and the purge gas valve 7 are maintained in the closed state, and the vacuum valve 5 is switched from the closed state to the open state, the groove 1 a of the table and the adsorption hole 1 b are slowly converted from the atmospheric state into Vacuum state. When the adsorption holes and the grooves are converted into a vacuum state, the atmospheric pressure causes the surface of the substrate to form a close contact with the surface of the table, and a strong adhesive force acts on each other. With respect to the adhesion force, the present invention conducted various experiments and found that when the adsorption holes are in a specified vacuum state, even if the adsorption holes and the grooves are converted into an atmospheric state, the interaction between the substrate and the table is caused by each other. Adhering to the force, the substrate can be firmly attached to the workbench, and the substrate is not displaced by external force. According to the results of the experiment, in the present invention, the adsorption holes and the grooves are converted into a certain vacuum state so that the substrate is in close contact with the table, and then the vacuum valve is opened to the closed state while the atmosphere valve is opened. Then, the adsorption holes and the grooves of the table are converted into an atmospheric state, and various processes are performed while the substrate is in close contact with the table. Therefore, the adsorption holes and the grooves of the stage in the process are filled with air, so that heat transfer substantially equal to the heat conduction between the substrate surface and the table can be ensured at these portions.消除 消除 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热The second (B) diagram is a heat conduction state pattern diagram when the hole is converted into a vacuum state and then processed in a state of being in communication with the atmosphere. In the conventional substrate holding device, when the vacuum extraction coating process is performed, the adsorption holes and the grooves are in a vacuum state as shown in the second (A) diagram, and there is no heat during the substrate and the table during the portions. The medium is conveyed and formed as a partial heat insulation. Even if there is a temperature difference between the substrate and the table, almost no heat is transferred between the substrates. On the other hand, when the substrate is in close contact with each other in a state where heat conduction is likely to occur and a temperature difference between the stages occurs, heat is generated in response to a temperature difference, for example, when the temperature of the substrate is higher than the temperature of the table. The heat inflow from the table to the substrate side is generated to increase the temperature of the substrate and the working portion. On the other hand, almost no heat inflow occurs at the adsorption hole portion of the stage, so that the temperature of the portion causes a temperature distribution of the substrate. The temperature distribution generated by the substrate is transmitted to the substrate film 1 〇, and the temperature distribution is formed on the coating film 10, which causes the evaporation rate of the solvent in the coating film to be different, and the result is a negative state diagram of the sentence 0, 2 The coating equipment is applied while the surface is not sucked, so it is in a state of close contact. Because of the inflow of the substrate and the workbench and the workbench. When it is still low, the table is tightly attached and the groove shape is unchanged, and the coating film on the 2 is unevenly coated -11 - 200816358 On the other hand, as shown in the second (B) diagram, when the adsorption hole is atmospheric In the state, the adsorption holes and the grooves are filled with air, and air is introduced between the substrate 2 and the upper surface of the table 1 to form a state in which heat transmission is hindered. Therefore, even if there is a temperature difference between the substrate and the table, heat is difficult to convey. For example, when the temperature of the table is higher than the temperature of the substrate, heat is transmitted from the table side to the substrate side through the air. However, since the air layer is between the two, almost uniform heat is transmitted. Unfavorable conditions caused by the temperature distribution of the substrate can be eliminated. According to the above analysis result, the present invention is to vacuum-adsorb the substrate onto the stage, and then convert the adsorption hole into an atmospheric state. In this state, various processes such as application of the coating liquid are performed to eliminate the temperature between the substrate and the table. The unfavorable situation caused by the difference. Fig. 3 is a control timing chart showing three valves when the substrate holding device of the present invention is mounted on a slit coating apparatus. In the standby state, the vacuum valve 5, the air opening valve 6, and the purge gas valve 4 are set to the closed state. When the table 1 is placed on the table 1, the control unit 8 controls the vacuum valve 5 to be switched from the closed state to the open state. The specified vacuum can be reached in about 3 seconds during this period. When the vacuum detecting means detects that the degree of vacuum in the adsorption hole is converted into a predetermined vacuum state, the atmospheric opening valve 6 is switched from the closed state to the open state after about one second. Almost at the same time, the narrow slit nozzle starts to move, and the coating process is performed for about 15 seconds. When the coating process is completed, the atmosphere opening valve 6 is switched from the open state to the closed state. At almost the same time, the purge gas valve 7 is switched from the closed state to the open state of -12-200816358, and the glass substrate is peeled off from the table. Next, the lift pin operates to completely move the substrate away from the table, and is transported to another place by the robot's gripping process to end the process. In addition, various processes such as preliminary ejection from a slit nozzle to a starter roll or formation of a solder joint before the substrate coating process can be performed in vacuum extraction (the vacuum valve is in an open state) or in an open air valve. Process before the status. Fig. 4 is a timing chart showing the valve control operation of the other embodiment. This embodiment is an open state of the open half of the atmosphere open valve 6 and the open state of the purge gas valve 7 is synchronous control. As a result, the production interval can be further shortened. The present invention is not limited to the above embodiments, and various modifications and changes can be made. For example, in the above-described embodiment, an example in which the substrate holding device of the present invention is mounted on a slit coating apparatus will be described, but it can also be applied to various substrate processing which may cause an adverse condition due to a temperature difference between the substrate and the stage. Device. Further, in the above embodiment, the purge valve is switched from the closed state to the open state after the atmosphere open valve is switched from the open state to the closed state, but the purge may be performed while the atmosphere open valve is maintained in the open state. The gas valve is switched to an open state. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1(A) is an enlarged cross-sectional view showing a principal part of a substrate holding device according to the present invention, and Fig. 1(B) is a partially enlarged plan view showing a substrate mounting surface. -13- 200816358 Figure 2 (A) and Figure 2 (B) are diagrams showing the heat transfer pattern between the substrate and the table. Fig. 3 is a timing chart showing the valve control operation. Fig. 4 is a timing chart showing the valve control operation of another embodiment. [Main component symbol description] 1 : Workbench 2 : Substrate 3 : Sealing member 4 : Conduit 5 : Vacuum valve 6 : Atmospheric open valve 7 : Purge gas valve 8 : Valve control device -14-