1360195 九、發明說明 【發明所屬之技術領域】 本發明是關於可對半導體晶圓或玻璃基板等各種基板 加以吸附保持的基板保持裝置。 【先前技術】 已知有可將玻璃基板載置在工作台上，利用真空吸附 φ 使玻璃基板固定在工作台上，然後移動窄縫噴嘴將塗液塗 佈在基板表面上的窄縫塗佈設備（例如參照專利文獻i) 。於該已知的窄縫塗佈設備中，使用附帶真空吸附的工作 台’利用真空吸附使需要處理的玻璃基板固定在工作台上 。接著’在玻璃基板被真空吸附在工作台上的狀態下移動 窄縫噴嘴執行塗佈處理。於基板表面塗佈中持續進行真空 抽取作業’在塗佈處理結束後就停止真空抽取，導入吹掃 氣體，從工作台卸下基板。 • 〔專利文獻1〕日本特開2002-79163號公報 【發明內容】 〔發明欲解決之課題〕 使用上述利用真空吸附使玻璃基板保持在工作台上的 基板保持裝置之窄縫塗佈設備中，因是在基板和工作台之 間作用有強大的真空吸附力，所以玻璃基板幾乎是於完全 固定在工作台上的狀態下執行塗佈處理。然而，在使用習 知的基板保持裝置塗佈完成後，於形成在基板表面的塗膜 -5- 1360195 表面，會產生有和工作台的吸附孔及吸附孔連通用的溝槽 同一形狀的不均勻問題。當塗膜產生不均勻時，在後續執 行的處理就無法形成正確的電路圖案，導致妨礙到微細化 0 此外，於窄縫塗佈設備中，從改善生產率的觀點來看 ，縮短生產間隔時間也是重要的課題。但是，爲了抑制塗 膜產生不均勻，需要將形成在工作台的吸附孔直徑設定成 較小的同時溝槽的寬度也要設定成較窄，因此真空抽取就 需要花費長時間，以致妨礙到生產間隔時間的縮短。再加 上’爲了抑制不均勻產生，也有運用較弱真空壓的手法， 但如此一來真空吸附勢必較花費時間，導致妨礙到生產間 隔的縮短。 〔用以解決課題之手段〕 本發明者針對基板上塗膜形成的不均勻進行了各種實 驗及解析的結果，得知在工作台上吸附保持著基板時產生 的溫度分佈是造成塗膜不均勻的原因。即，將基板真空吸 附在工作台上時，基板和工作台的表面是形成緊貼，而基 板和工作台的表面是直接接觸著。因此，當基板和工作台 之間有溫度差時，執行從基板側直接傳至工作台側或從工 作台側直接傳至基板側的直接熱傳導。其結果，例如當基 板的溫度比工作台的溫度還高時，於基板和工作台直接接 觸的部位是會產生有從基板側直接傳至工作台側的熱傳導 ，造成該部位的基板溫度降低。 1360195 形成部位是成爲真 和工作台之間幾乎 之間就會形成溫度 的溫度還高的狀況 熱移傳達，造成該 狀態，導致溫度分 側的表面，使基板 差，以致塗膜產生 發明，其構成爲在 分佈形成。 的載置面開口有複 於玻璃基板上的窄 備有：於一端側形 端側形成和真空源 置部的吸附孔連通 放閥；及上述真空 裝置， 載置有基板時控制 的同時，在檢測出 述真空閥從開放狀 換成關閉狀態後， 另一方面，工作台的吸附孔或溝槽 空狀態，並沒有熱傳達媒體，因此基板 不產生熱傳導。其結果，基板和工作台 差，例如即使是在基板的溫度比工作台 還是不會產生從基板側傳至工作台側的 部位的溫度是維持在比周圍溫度還高的 佈形成。該溫度分佈會傳達至基板相反 相反側表面上形成的塗膜出現蒸發速度 不均勻。 本發明是基於上述解析結果而爲的 對基板進行指定處理的期間不會有溫度 即，本發明是針對基板吸附保持用 數吸附口的利用窄縫噴嘴將塗佈液塗佈 縫塗佈設備的基板保持裝置，構成爲具 成和上述載置部的吸附孔連通，於另一 連通的真空閥；於一端側形成和上述載 ’於另一端側形成和大氣連通的大氣開 閥和上述大氣閥的開閉控制用的閥控制 上述閥控制裝置是在上述載置面上 上述真空閥從關閉狀態轉換成開放狀態 上述吸附孔成爲指定真空狀態後控制上 態轉換成關閉狀態， ~此外’在上述真空閥從開放狀態轉 控制上述大氣開放閥從關閉狀態轉換成開放狀態， 1360195 並且，使上述吸附孔從真空狀態過渡到大氣 大氣狀態中執行塗佈液的塗佈。 不過，當基板被吸附在工作台上時，基板是 在工作台上，在工作台和基板之間作用有強大的 由於該緊貼力的作用，即使工作台的吸附孔轉換 態，還是能夠將基板維持成緊貼在工作台上的狀 ，本發明是在檢測出吸附孔的真空度達到指定真 將大氣閥轉換成開放狀態，使吸附孔從真空狀態 氣狀態，於大氣狀態下執行塗佈等各種處理。指 束後，將大氣閥從開放狀態轉換成關閉狀態的同 氣體閥轉換成開放狀態使基板從工作台剝離。 本發明是在基板被吸附保持在工作台上後， 附孔及吸附孔間的溝槽轉換成大氣狀態，於大氣 行各種處理，因此基板和工作台之間即使有溫度 能夠防止基板產生溫度分佈造成的不利狀況。 採用本發明的基板保持裝置時，能夠消除基 台之間因溫度差存在造成的不利狀況，所以就能 孔的直徑形成較大的同時還可將吸附孔連通用的 形成較大。其結果，能夠縮短真空抽取所需時間 到縮短生產間隔時間的效果。 此外，使用本發明相關裝置的基板保持方法 括：上述載置部載置有基板時，對上述吸附孔加 取的步驟；當檢測出上述吸附孔達到指定真空狀 止真空抽取的步驟；及對上述吸附孔加入大氣開 狀態，在 牢固緊貼 緊貼力。 成大氣狀 態。於是 空度後， 轉換成大 定處理結 時將吹掃 將連通吸 狀態下執 差’還是 板和工作 夠將吸附 溝槽寬度 ，能夠達 ，例如包 以真空抽 態時就·停 放的步驟 -8 - 1360195 本發明的基板處理裝置，因是在工作台的吸附孔維持 成大氣狀態的期間對基板執行指定處理，所以基板和工作 台之間即使有溫度差，兩者還是隔著熱傳達效率差的空氣 ’因此可確保大致均勻的熱流入在工作台和基板之間，能 夠防止溫度分佈形成在基板造成的不利狀況。 上狀 台氣 作大 工爲 在成 持是 保孔 附附 吸吸 板的 基台 使作 附工 吸間 空期 真行 用執 利理 是處 彳雖定 果明指 效發於 明本， 發但 態，所以當本發明應用在塗佈裝置時，基板不會形成有溫 度分佈，因此能夠有效防止溫度分佈造成的塗佈不均，再 加上還能夠縮短生產間隔時間。 【實施方式】 〔發明之最佳實施形態〕 以下，根據附圖對本發明的最佳實施例進行說明。第 1(A)圖爲本發明相關的基板保持裝置要部放大剖面圖 ，第1(B)圖爲基板載置面局部放大平面圖，本例是針 對使用窄縫噴嘴在玻璃基板上加以塗佈的窄縫塗佈設備之 基板保持裝置進行說明。 於基板保持裝置的載置部即工作台1上載置基板2, 利用*真空吸附將基板2吸附保持在工作台1上。於工作台 1的基板載置面，形成有彼此正交的多數溝槽la，於各溝 • 9 - 1360195 槽的交點形成有二維矩陣狀的吸附孔1 b。吸附孔 是形成比習知吸附孔徑還大，例如是設定在1 3.〇mm範圍。此外，各吸附孔間連通用的溝槽寬度 成比習知溝槽寬度（0.2mm)還寬，例如是設定在 以上。如上述，藉由將吸附孔的直徑及吸附孔連通 槽寬度設定成較大，能夠縮短吸附孔真空抽取時達 真空度的所需時間，能夠縮短生產間隔時間。 工作台1是形成有溝槽la及吸附孔lb連通用 孔1 c，該流路孔1 c是透過密封構件3連接於導管 管4是分岐爲3支，透過真空閥5連通於真空源， 氣開放閥6連通於大氣，透過吹掃氣體閥7連通於 體源。3個閥5〜7是利用來自於閥控制裝置8供 制訊號加以開閉控制。另，控制裝置8並不只是執 開閉控制而已，還可執行塗佈機構等其他要素的控 ，於流路孔1 c設有真空檢測手段（未圖示），可 孔及溝槽是否爲指定真空狀態加以檢測，將其檢測 應至閥控制裝置8。 當大氣開放閥6及吹掃氣體閥7維持成關閉狀 真空閥5從關閉狀態轉換成開放狀態時，工作台 1 a及吸附孔1 b就會從大氣狀態慢慢轉換成真空狀 吸附孔及溝槽轉換成真空狀態時，大氣壓會讓基板 和工作台的表面形成緊貼，彼此作用有強大的緊貼 對該緊貼力，本發明進行了各種實驗的結果，得知 孔成爲指定真空狀態時，即使將吸附孔及溝槽轉換 的直徑 • 0mm 〜 也是形 0.5mm 用的溝 到指定 的流路 4。導 透過大 吹掃氣 應的控 行閥的 制。又 對吸附 訊號供 態，將 的溝槽 態。當 的表面 力。針 當吸附 成大氣 -10- 1360195 . · 狀態’但藉由基板和工作台之間彼此作用的緊貼力 ㊆夠讓基板牢固緊貼在工作台上，基板不會因外力 。根據該實驗結果，本發明是吸附孔及溝槽轉換成 真空狀態使基板緊貼在工作台上後，再將真空閥轉 閉狀態的同時對大氣開放閥加以開放。接著，使工 吸附孔及溝槽轉換成大氣狀態，於基板是緊貼在工 的狀態下執行各種處理。因此，處理中工作台的吸 % 溝槽是成爲充滿空氣的狀態，所以於該等部位，就 與產生在基板表面和工作台之間的熱傳導大致同等 導’消除不被期望的溫度分佈形成在基板造成的不[Technical Field] The present invention relates to a substrate holding device that can hold and hold various substrates such as a semiconductor wafer or a glass substrate. [Prior Art] It is known that a glass substrate can be placed on a table, a glass substrate can be fixed on a table by vacuum adsorption φ, and then a narrow slit nozzle can be applied to apply a coating solution on the surface of the substrate. Equipment (for example, refer to patent document i). In the known slit coating apparatus, a glass substrate to be treated is fixed on a workbench by vacuum suction using a table with vacuum adsorption. Then, the coating process is performed by moving the slit nozzle in a state where the glass substrate is vacuum-adsorbed on the stage. The vacuum extraction operation is continued during the surface coating of the substrate. After the coating process is completed, the vacuum extraction is stopped, and the purge gas is introduced to remove the substrate from the table. [Patent Document 1] JP-A-2002-79163 SUMMARY OF INVENTION [Problem to be Solved by the Invention] The above-described slit coating apparatus for a substrate holding device that holds a glass substrate on a table by vacuum suction is used. Since a strong vacuum adsorption force acts between the substrate and the stage, the glass substrate is subjected to a coating process almost in a state of being completely fixed on the stage. However, after the application of the conventional substrate holding device is completed, on the surface of the coating film - 5,360,195 formed on the surface of the substrate, the same shape as that of the groove for communicating with the adsorption hole and the adsorption hole of the table is generated. Even problem. When the coating film is uneven, the subsequent circuit processing cannot form a correct circuit pattern, resulting in impediment to miniaturization. Moreover, in the narrow slit coating apparatus, the production interval is shortened from the viewpoint of improving productivity. Important topic. However, in order to suppress the unevenness of the coating film, it is necessary to set the diameter of the adsorption hole formed in the table to be small while the width of the groove is also set to be narrow, so that vacuum extraction takes a long time, so that it hinders production. The interval is shortened. In addition, in order to suppress the occurrence of unevenness, there is also a method of applying a weak vacuum pressure, but as a result, vacuum adsorption tends to take time, resulting in hindering the shortening of the production interval. [Means for Solving the Problem] The present inventors conducted various experiments and analysis on the unevenness of the coating film formed on the substrate, and found that the temperature distribution generated when the substrate was adsorbed and held on the stage was caused to cause uneven coating film. s reason. That is, when the substrate is vacuum-adsorbed on the stage, the surfaces of the substrate and the table are formed in close contact with each other, and the surfaces of the substrate and the table are in direct contact. Therefore, when there is a temperature difference between the substrate and the stage, direct heat conduction from the substrate side to the table side or directly from the stage side to the substrate side is performed. As a result, for example, when the temperature of the substrate is higher than the temperature of the stage, heat conduction from the substrate side to the table side occurs at a portion where the substrate and the table are directly in contact with each other, and the substrate temperature at the portion is lowered. 1360195 The formation part is a heat transfer condition in which the temperature between the true and the worktable is almost high, and the temperature is high, causing the state to cause the surface of the temperature side to make the substrate poor, so that the coating film is invented. It is configured to be formed in a distribution. The opening of the mounting surface is provided on the glass substrate, and is provided with a suction hole communicating valve formed on the one end side end side and the vacuum source portion; and the vacuum device is controlled while the substrate is placed. After detecting that the vacuum valve is changed from the open state to the closed state, on the other hand, the adsorption hole or the groove of the table is in an empty state, and there is no heat transfer medium, so the substrate does not generate heat conduction. As a result, the substrate and the stage are inferior. For example, even when the temperature of the substrate is higher than the stage, the temperature from the substrate side to the table side is maintained at a temperature higher than the ambient temperature. This temperature distribution is transmitted to the opposite side of the substrate, and the coating film formed on the opposite side surface exhibits an uneven evaporation rate. According to the present invention, in the case where the substrate is subjected to the designation process based on the analysis result, the temperature is not applied to the substrate, and the present invention is applied to the coating solution coating apparatus by the slit nozzle for the substrate adsorption holding number adsorption port. The substrate holding device is configured to have a vacuum valve that communicates with the adsorption hole of the mounting portion and communicates with the other, and forms an atmospheric valve and the atmospheric valve that are connected to the other end side and communicate with the atmosphere on the one end side. The valve for controlling the opening and closing control is such that the vacuum valve is switched from the closed state to the open state on the mounting surface, and the adsorption hole is in a designated vacuum state, and then the control state is switched to the closed state. The valve is switched from the open state to the above-described atmosphere open valve to be switched from the closed state to the open state, and 1360195, and the application of the coating liquid is performed by transitioning the adsorption hole from the vacuum state to the atmospheric atmosphere. However, when the substrate is adsorbed on the workbench, the substrate is on the workbench, and there is a strong interaction between the workbench and the substrate due to the adhesive force, even if the adsorption hole of the workbench is in a transition state, The substrate is maintained in a state of being closely attached to the workbench. In the present invention, when the degree of vacuum of the adsorption hole is detected, the atmospheric valve is converted into an open state, and the adsorption hole is subjected to coating from the vacuum state to the atmospheric state. And so on. After the fingering, the gas valve that switches the atmospheric valve from the open state to the closed state is switched to the open state to peel the substrate from the table. According to the present invention, after the substrate is adsorbed and held on the stage, the groove between the attached hole and the adsorption hole is converted into an atmospheric state, and various treatments are performed in the atmosphere, so that even if there is temperature between the substrate and the table, temperature distribution of the substrate can be prevented. The unfavorable situation caused. According to the substrate holding device of the present invention, it is possible to eliminate the disadvantageous situation caused by the temperature difference between the bases, so that the diameter of the holes can be formed large and the formation of the suction holes can be made large. As a result, the effect of the time required for vacuum extraction to shorten the production interval can be shortened. Further, a substrate holding method using the apparatus according to the present invention includes: a step of adding the adsorption hole when the substrate is placed on the mounting portion; and a step of detecting that the adsorption hole reaches a vacuum-like vacuum extraction; and The adsorption holes are added to the atmosphere to be in close contact with each other. In an atmospheric state. Then, after the vacancy, when converting to a large fixed process junction, the purge will be connected to the suction state, or the plate and the work will be enough to absorb the groove width, which can be reached, for example, when the package is vacuumed and then parked - 8 - 1360195 The substrate processing apparatus of the present invention performs a designation process on the substrate while the adsorption hole of the stage is maintained in an atmospheric state. Therefore, even if there is a temperature difference between the substrate and the stage, the heat transfer efficiency is high. The poor air' thus ensures a substantially uniform heat flow between the table and the substrate, preventing the temperature distribution from forming an unfavorable condition caused by the substrate. The upper stage of the gas is used for the work. In the case of the support, the base of the suction hole is attached to the suction plate, so that it is used for the attachment period. Therefore, when the present invention is applied to a coating apparatus, the substrate does not have a temperature distribution, so that uneven coating due to temperature distribution can be effectively prevented, and the production interval can be shortened. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. 1(A) is an enlarged cross-sectional view of a main portion of a substrate holding device according to the present invention, and FIG. 1(B) is a partially enlarged plan view showing a substrate mounting surface, which is applied to a glass substrate by using a slit nozzle. The substrate holding device of the slit coating apparatus will be described. The substrate 2 is placed on the table 1 which is the mounting portion of the substrate holding device, and the substrate 2 is adsorbed and held on the table 1 by vacuum suction. A plurality of grooves la orthogonal to each other are formed on the substrate mounting surface of the stage 1, and two-dimensional matrix-shaped adsorption holes 1b are formed at intersections of the grooves of each of the grooves. The adsorption holes are formed to be larger than the conventional adsorption pore size, and are set, for example, in the range of 1. 3 mm. Further, the width of the groove for communicating between the adsorption holes is wider than the conventional groove width (0.2 mm), and is set, for example, above. As described above, by setting the diameter of the adsorption hole and the width of the adsorption hole communication groove to be large, the time required for the vacuum degree of the suction hole to be vacuumed can be shortened, and the production interval can be shortened. The table 1 is formed with a groove la and a suction hole 1b communicating hole 1 c. The flow path hole 1 c is connected to the conduit tube 4 through the sealing member 3 and has three branches, and is connected to the vacuum source through the vacuum valve 5 . The gas open valve 6 is in communication with the atmosphere and is connected to the body source through the purge gas valve 7. The three valves 5 to 7 are controlled to be opened and closed by a signal supplied from the valve control unit 8. Further, the control device 8 is not only controlled to open and close, but also controls other elements such as a coating mechanism, and a vacuum detecting means (not shown) is provided in the flow path hole 1c, and whether the hole and the groove are designated The vacuum state is detected and its detection is applied to the valve control unit 8. When the atmosphere opening valve 6 and the purge gas valve 7 are maintained in a closed state, the vacuum valve 5 is switched from the closed state to the open state, and the table 1 a and the adsorption hole 1 b are gradually converted from the atmospheric state into a vacuum adsorption hole and When the groove is converted into a vacuum state, the atmospheric pressure causes the surface of the substrate and the table to be in close contact with each other, and the force acts closely against the adhesion force. The present invention performs various experiments and finds that the hole becomes a designated vacuum state. At the time, even if the diameter of the adsorption hole and the groove is converted, 0 mm 〜 is the groove for the 0.5 mm shape to the designated flow path 4. Guide through the control system of the large purge gas. It also supplies the state of the adsorption signal to the trench state. When the surface force. When the needle is adsorbed into the atmosphere -10- 1360195 . · State 'but the adhesion between the substrate and the table is sufficient for the substrate to firmly adhere to the table, and the substrate is not affected by external force. According to the results of the experiment, in the present invention, after the adsorption holes and the grooves are switched into a vacuum state so that the substrate is in close contact with the table, the vacuum valve is opened and closed while the vacuum valve is closed. Then, the working adsorption holes and the grooves are converted into an atmospheric state, and various processes are performed while the substrate is in close contact with the working state. Therefore, the suction % groove of the processing stage is in a state of being filled with air, so that the heat conduction between the surface of the substrate and the table is substantially the same as that in the portion to eliminate the undesired temperature distribution. The substrate does not cause
Q 第2爲基板和工作台之間的熱傳導形態說明圖 (A)圖爲表示一邊執行真空抽取一邊利用窄縫塗 完成塗佈時的熱傳導狀態模式圖，第2(B)圖爲 附孔轉換成真空狀態後在與大氣成連通的狀態下進 φ 處理時的熱傳導狀態模式圖。· 如習知的基板保持裝置，一邊執行真空抽取一 塗佈處理時，因吸附孔及溝槽內是成爲真空狀態， 第2(A)圖所示，於該等部位在基板和工作台成 期間是沒有熱傳達媒體存在，形成爲局部性隔熱狀 此，基板和工作台之間即使有溫度差，但於基板和 之間幾乎是不執行熱的授受。另一方面，於基板和 彼¥成緊貼的部位是成爲容易產生熱傳導的狀態， 和工作台之間有溫度差時，會因應溫度差產生熱的 ，還是 而位移 一定的 換成關 作台的 作台上 附孔及 可確保 的熱傳 利狀況 ，第2 佈設備 表不吸 行塗佈 邊進行 所以如 緊貼的 態。因 工作台 工作台 當基板 流入。 -11 - 1360195 該熱的流入，例如當基板的溫度比工作台的溫度還低時， 產生從工作台往基板側的熱流入，使基板和工作台成緊貼 的部位溫度變高。另一方面，於工作台的吸附孔及溝槽形 成部位幾乎不產生熱的流入，因此該部位的溫度不變，其 結果就導致基板產生溫度分佈。 基板所產生的溫度分佈被傳達至形成在基板2上的塗 膜10，於塗膜10照樣形成溫度分佈，該溫度分佈的原故 造成塗膜中的溶劑蒸發速度不同，其結果就產生塗膜不均 勻。 另一方面，如第2(B)圖所示，當吸附孔爲大氣狀 態時，吸附孔及溝槽充滿空氣，再加上基板2和工作台1 上面之間有空氣進入，形成熱傳達受到阻礙的狀態。因此 ，基板和工作台之間即使有溫度差但熱難以傳達。例如： 工作台的溫度比基板的溫度還高時，熱會透過空氣欲從工 作台側傳往基板側，但因有空氣層介於兩者之間所以是進 行幾乎均等熱的傳達，因此就可消除基板產生溫度分佈造 成的不利狀況》 根據上述解析結果，本發明是將基板真空吸附在工作 台上後，使吸附孔轉換成大氣狀態，在該狀態下執行塗液 的塗佈等各種處理，消除因基板和工作台之間的溫度差造 成的不利狀況。 第3圖是表示本發明的基板保持裝置搭載在窄縫塗佈 設備時3個閥的控制時間圖。於待機狀態，真空閥5、大 氣開放閥6及吹掃氣體閥4是設定成關閉狀態》 -12- 1360195 當工作台1上載置有基板2時，控制裝置8是控制真 空閥5從關閉狀態轉換成開放狀態。該期間約3秒時間就 可達到指定真空度。 當真空檢測手段檢測出吸附孔內的真空度轉換成預定 的真空狀態時，約於1秒後大氣開放閥6就會從關閉狀態 轉換成開放狀態。幾乎是同時窄縫噴嘴會開始移動，執行 約1 5秒時間的塗佈處理。 塗佈處理完成時’大氣開放閥6是從開放狀態轉換成 關閉狀態。幾乎同時’吹掃氣體閥7是從關閉狀態轉換成 開放狀態，使玻璃基板從工作台剝離。其次，昇降銷會動 作’使基板完全離開工作台，由機器人的抓取處理搬運至 別處，結束處理。 另’基板塗佈處理之前的先行各種處理例如從窄縫噴 嘴往起動輥的預備噴出或焊點的形成等，可在真空抽取中 (真空閥爲開放狀態）或者是在大氣開放閥轉換成開放狀 態前進行處理。 桌4圖爲表不另一實施例相關閥控制動作的時間圖， 該實施例是構成大氣開放閥6的開放狀態後半部和吹掃氣 體閥7的開放狀態爲同步控制。如此一來，可更加縮短生 產間隔時間。 本發明並不限定於上述的實施例，是可加以各種的變 形或變更。例如：於上述的實施例中，針對本發明的基板 保持裝置搭載在窄縫塗佈設備時的例子進行說明，但也可 應用在會因基板和工作台的溫度差產生不利狀況的各種基 -13- 1360195 板處理裝置。 此外’上述的實施例是將大氣開放閥從開放狀態轉換 成關閉狀態後再將吹掃氣體閥從關閉狀態轉換成開放狀態 ’但也可在大氣開放閥維持成開放狀態的狀態下將吹掃氣 體閥轉換成開放狀態。 【圖式簡單說明】 第1(A)圖爲本發明相關的基板保持裝置要部放大 剖面圖，第1 (B)圖爲基板載置面局部放大平面圖。 第2(A)圖及第2(B)圖爲基板和工作台之間的熱 傳導形態說明圖。 第3圖爲表示閥控制動作的時間圖。 第4圖爲表示另一實施例相關閥控制動作的時間圖。 【主要元件符號說明】 1 :工作台 2 :基板 3 :密封構件 4 :導管 5 :真空閥 6 :大氣開放閥 7 :吹掃氣體閥 8 :閥控制裝置Q. Fig. 2 is a diagram showing a state of heat conduction between the substrate and the table. Fig. (A) is a view showing a state of heat conduction when coating is performed by narrow slit coating while vacuum extraction is performed, and Fig. 2(B) is a hole conversion. A diagram showing the heat conduction state pattern when the φ process is performed in a state of being in a state of being in communication with the atmosphere in a vacuum state. · When performing the vacuum extraction and coating process as in the conventional substrate holding device, the adsorption holes and the grooves are in a vacuum state, as shown in the second (A) diagram, and the substrates and the table are formed at the portions. During this period, there is no heat transfer medium, and it is formed into a partial heat insulation. Even if there is a temperature difference between the substrate and the table, almost no heat is transferred between the substrate and the substrate. On the other hand, in the portion where the substrate and the substrate are in close contact with each other, heat is easily generated. When there is a temperature difference between the substrate and the table, heat is generated in response to the temperature difference, and the displacement is fixed. The hole on the table is attached to the hole and the heat transfer condition can be ensured. The second cloth equipment table is not sucked and coated, so it is in a close state. Due to the workbench table, the substrate flows in. -11 - 1360195 This heat inflow, for example, when the temperature of the substrate is lower than the temperature of the table, generates heat inflow from the table to the substrate side, and the temperature at which the substrate and the table are in close contact becomes high. On the other hand, almost no heat inflow occurs in the adsorption holes and the groove forming portions of the table, so that the temperature of the portion does not change, and as a result, the temperature distribution of the substrate is caused. The temperature distribution generated by the substrate is transmitted to the coating film 10 formed on the substrate 2, and the coating film 10 forms a temperature distribution, which causes the evaporation rate of the solvent in the coating film to be different, and as a result, the coating film is not produced. Evenly. On the other hand, as shown in Fig. 2(B), when the adsorption holes are in an atmospheric state, the adsorption holes and the grooves are filled with air, and air is introduced between the substrate 2 and the upper surface of the table 1 to form heat transfer. Obstructed state. Therefore, even if there is a temperature difference between the substrate and the table, heat is difficult to convey. For example, when the temperature of the table is higher than the temperature of the substrate, heat is transmitted from the table side to the substrate side through the air. However, since the air layer is between the two, almost uniform heat is transmitted. According to the above analysis result, the present invention is to vacuum-adsorb the substrate onto the stage, and then convert the adsorption hole into an atmospheric state, and perform various treatments such as coating of the coating liquid in this state. To eliminate the unfavorable condition caused by the temperature difference between the substrate and the workbench. Fig. 3 is a control timing chart showing three valves when the substrate holding device of the present invention is mounted on a slit coating apparatus. In the standby state, the vacuum valve 5, the atmosphere opening valve 6, and the purge gas valve 4 are set to the closed state" -12 - 1360195. When the table 1 is placed on the table 1, the control device 8 controls the vacuum valve 5 from the closed state. Converted to an open state. The specified vacuum can be reached in about 3 seconds during this period. When the vacuum detecting means detects that the degree of vacuum in the adsorption hole is converted into a predetermined vacuum state, the atmospheric opening valve 6 is switched from the closed state to the open state after about one second. Almost at the same time, the narrow slit nozzle starts to move, and the coating process is performed for about 15 seconds. When the coating process is completed, the atmosphere opening valve 6 is switched from the open state to the closed state. At almost the same time, the purge gas valve 7 is switched from the closed state to the open state to peel the glass substrate from the table. Next, the lift pin operates "to completely move the substrate away from the table, and it is transported to another place by the robot's gripping process, and the processing is terminated. In addition, various previous processes before the substrate coating process, such as preliminary ejection from the slit nozzle to the starter roller or formation of solder joints, can be switched into vacuum during vacuum extraction (the vacuum valve is open) or open at the atmosphere. Process before the status. The table 4 is a time chart showing the valve control operation of the other embodiment. This embodiment is an open state of the open half of the atmosphere open valve 6 and the open state of the purge gas valve 7 is synchronous control. As a result, the production interval can be further shortened. The present invention is not limited to the above embodiments, and various modifications and changes can be made. For example, in the above-described embodiment, an example in which the substrate holding device of the present invention is mounted on a slit coating apparatus will be described, but it can also be applied to various substrates which may cause an unfavorable situation due to a temperature difference between the substrate and the table - 13- 1360195 Board processing unit. Further, the above-described embodiment converts the purge valve from the closed state to the open state after the atmospheric open valve is switched from the open state to the closed state, but may also be purged while the atmospheric open valve is maintained in the open state. The gas valve is switched to an open state. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1(A) is an enlarged cross-sectional view of a principal part of a substrate holding device according to the present invention, and Fig. 1(B) is a partially enlarged plan view showing a substrate mounting surface. Fig. 2(A) and Fig. 2(B) are diagrams showing the heat conduction pattern between the substrate and the table. Fig. 3 is a timing chart showing the valve control operation. Fig. 4 is a timing chart showing the valve control operation of another embodiment. [Main component symbol description] 1 : Workbench 2 : Substrate 3 : Sealing member 4 : Catheter 5 : Vacuum valve 6 : Atmospheric open valve 7 : Purge gas valve 8 : Valve control device