CN106992144B - 半导体装置的制作方法 - Google Patents
半导体装置的制作方法 Download PDFInfo
- Publication number
- CN106992144B CN106992144B CN201610210325.1A CN201610210325A CN106992144B CN 106992144 B CN106992144 B CN 106992144B CN 201610210325 A CN201610210325 A CN 201610210325A CN 106992144 B CN106992144 B CN 106992144B
- Authority
- CN
- China
- Prior art keywords
- wafer
- hole
- copper
- back side
- method described
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 30
- 230000008569 process Effects 0.000 claims abstract description 15
- 238000000137 annealing Methods 0.000 claims abstract description 8
- 238000007517 polishing process Methods 0.000 claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 3
- 238000001125 extrusion Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 2
- 238000002161 passivation Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 34
- 239000000758 substrate Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000206 moulding compound Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
- H01L2224/13024—Disposition the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
本发明公开了一种半导体装置的制作方法,包含:提供一晶圆,具有一正面与一背面;于所述正面形成多数个穿板通孔;于所述多数个穿板通孔上形成一重分布层;将所述晶圆与一载板接合;于所述背面进行一晶背抛光工艺,薄化所述晶圆;进行一退火工艺,使所述穿板通孔再结晶;以及进行一化学机械抛光工艺,抛光所述晶圆的所述背面。
Description
技术领域
本发明涉及一种半导体装置的制作方法,特别是涉及一种穿板通孔(throughsubstrate via,TSV)(或穿硅通孔)中介层的制作方法。
背景技术
穿板通孔中介层是一种设置在一个或多个集成电路芯片与一安装基板之间的半导体装置,其中包含有复数个导电通孔。这些导电通孔可允许集成电路芯片与安装基板之间的电连接。
根据公知技术,上述导电通孔的制作方法是先在一硅基板的正面形成孔洞,接着在孔洞的侧壁形成绝缘结构,然后以电镀方式于孔洞内填入导电金属,例如铜,再抛光硅基板的背面以暴露出导电通孔的另一端面,用来提供进一步连结使用。
然而,上述现有技术仍有许多缺点。例如,自硅基板的背面暴露出来的导电通孔的另一端面上常会有铜挤出(copper extrusion)现象。有鉴于此,本技术领域仍需要一种改良的半导体装置的制作方法,可以解决上述现有技术面临的问题。
发明内容
根据本发明实施例,本发明公开一种半导体装置的制作方法,包含:提供一晶圆,具有一正面与一背面;于所述正面形成多数个穿板通孔(through substrate via,穿板通孔);于所述多数个穿板通孔上形成一重分布层;将所述晶圆接合一载板;于所述背面进行一晶背抛光工艺,薄化所述晶圆;进行一退火工艺,使所述穿板通孔再结晶;以及进行一化学机械抛光工艺,抛光所述晶圆的所述背面。
毋庸置疑的,本领域的技术人员读完接下来本发明优选实施例的详细描述与附图后,均可了解本发明的目的。
附图说明
图1到图6是根据本发明一实施例所绘示的一种半导体装置的制作方法的剖面示意图。
其中,附图标记说明如下:
100 晶圆
100a 正面
100b 背面
101 穿板通孔
102 铜金属层
103 硅氧层
110 重分布层
112 介电层
114 金属层
116 凸块
130 铜挤出缺陷
200 载板
300 退火工艺
具体实施方式
接下来的详细叙述须参考相关附图所示内容,用来说明可根据本发明具体实行的实施例。这些实施例提供足够的细节,可使本领域中的技术人员充分了解并具体实行本发明。在不悖离本发明的范围内,可做结构、逻辑和电性上的修改应用在其他实施例上。
因此,接下来的详细描述并非用来对本发明加以限制。本发明涵盖的范围由其权利要求界定。与本发明权利要求具同等意义者,也应属本发明涵盖的范围。本发明实施例所参考的附图为示意图,并未按比例绘制,且相同或类似的特征通常以相同的附图标记描述。
在本说明书中,“晶圆”与“基板”意指任何包含一暴露面,可根据本发明实施例的描述在其上沉积材料,制作集成电路结构的结构物,例如重分布层。须了解的是“基板”包含半导体晶圆,但并不限于此。"基板"在工艺中也意指包含制作于其上的材料层的半导体结构物。
请参考图1到图6,是根据本发明一实施例所绘示的一种半导体装置的制作方法的剖面示意图。
如图1所示,首先,提供一晶圆100。晶圆100可以是例如一硅中介层晶圆(siliconinterposer wafer),但不限于此。晶圆100可以具有一初始厚度,例如介于600至800微米之间。根据本发明一实施例,晶圆100的厚度可以是770微米。晶圆100具有一正面100a以及一背面100b。
接着,在所述晶圆100的正面100a形成深入到晶圆100内部的多数个穿板通孔(through substrate vias,TSV)101。可以用本领域公知技术形成上述穿板通孔101。例如,要形成上述穿板通孔101,可以于晶圆100的正面100a上形成穿板通孔孔洞,至晶圆100一主表面以下的一预定深度。接着,形成一介电层,例如硅氧层103,作为穿板通孔孔洞内的绝缘内壁。接着,于穿板通孔孔洞内填入金属,其可以包括,但不限于,扩散阻障层及铜金属层102。之后,可以选择对晶圆100的正面100a进行一抛光工艺以及一退火工艺。
如图2所示,根据所述实施例,接着在晶圆100的正面100a上形成一重分布层(redistribution layer,RDL)110。所述重分布层110可以包含至少一介电层112以及至少一金属层114。上述穿板通孔101可以电连接到金属层114。接着,在所述重分布层110上形成多数个凸块116,例如,微凸块,用来提供进一步连接使用。所述凸块116可以是直接形成在位于金属层114中的相对应的接触垫上。
本领域的技术人员应可理解,附图中的重分布层110结构仅为例示说明。在其它实施例中,重分布层110可以包含复数层介电层以及形成在所述复数层介电层内的复数层金属内连线结构或绕线。在其它实施例中,可以进一步在晶圆100的正面100a上设置半导体晶粒(图未示),再由一模塑料(图未示)包覆起来。
如图3所示,接着,以凸块116面向一载板200的方位,将晶圆100黏贴至载板200上。载板200可以是,例如,玻璃载板、硅载板等,但不限于此。凸块116接触到载板200。可以选择使用一黏着层(图未示),将晶圆100黏贴至载板200上。
如图4所示,将晶圆100黏贴至载板200之后,接着对晶圆100的背面100b进行一晶背抛光工艺,以薄化晶圆100。部分的晶圆100从其背面100b被去除。根据本发明实施例,可选择利用一化学机械抛光(chemical mechanical polishing,CMP)工艺抛光晶圆100的背面100b,使穿板通孔101的一端从晶圆100的背面100b暴露出来。
如图5所示,接着可以对晶圆100的背面100b进行一退火工艺300,使穿板通孔101的铜金属层102再结晶。根据一优选实施例,退火工艺300是在约200℃的温度下进行。根据所述实施例,在穿板通孔101暴露出来的一端面上,可能产生铜挤出缺陷130。
如图6所示,接着可以对晶圆100的背面100b进行另一化学机械抛光工艺,用来抛光移除上述铜挤出缺陷130。接着,可以选择性的在晶圆100的背面100b上形成一钝化层(图未示),也可以选择性的在晶圆100的背面100b上形成另一重分布层(图未示)。之后,将晶圆100与载板200分离。
以上所述仅为本发明的优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (12)
1.一种半导体装置的制作方法,其包含:
形成从晶圆的正面延伸至所述晶圆的通孔;
用铜填充所述通孔;
在所述晶圆的所述正面上形成重分布层RDL,所述RDL由至少一个介电层和包括绕线的至少一个金属层组成,所述绕线连接至填充所述通孔的铜;
在所述绕线的接触垫上形成凸块,且所述凸块连接至所述绕线的接触垫;
将所述晶圆的正面与载板接合;
在所述晶圆的背面进行抛光工艺以薄化所述晶圆的背面,从而暴露所述通孔的每一者的铜填充的端面以形成穿板通孔TSV;
在所述TSV的每一者的铜填充的所述端面暴露后,进行退火工艺以再结晶填充所述TSV的铜并在所述TSV的每一者的铜填充的所述端面处形成铜挤出;以及
进行化学机械抛光CMP工艺以抛光所述晶圆的所述背面并移除所述铜挤出。
2.根据权利要求1所述的半导体装置的制作方法,其中形成从晶圆的正面延伸至所述晶圆的通孔包含:
从所述晶圆的所述正面形成孔洞至所述晶圆的所述正面下方的预定深度;
在用铜填充所述孔洞之前用介电层绝缘所述孔洞的内部表面。
3.根据权利要求1所述的方法,其中所述退火工艺是在200℃的温度下进行的。
4.根据权利要求1所述的方法,其进一步包括在执行所述CMP工艺之后,将所述载板与所述晶圆分离。
5.根据权利要求1所述的方法,其中形成从晶圆的正面延伸至所述晶圆的通孔包括形成至半导体晶圆的通孔。
6.根据权利要求5所述的方法,其进一步包括选择所述半导体晶圆以包括硅。
7.根据权利要求1所述的方法,其中形成从晶圆的正面延伸至所述晶圆的通孔包括将通孔形成于工艺中的半导体结构物内。
8.根据权利要求1所述的方法,其中在所述晶圆的所述正面上形成由至少一个介电层和包括绕线的至少一个金属层组成的重分布层RDL进一步包括形成包括多个介电层和在所述多个介电层中的多个内连线结构和绕线中的至少一者的RDL。
9.根据权利要求1所述的方法,其进一步包括选择所述载板为玻璃载板或硅载板。
10.根据权利要求1所述的方法,其中形成从晶圆的正面延伸至所述晶圆的通孔包括形成延伸至初始厚度在600μm和800μm之间的晶圆的通孔。
11.根据权利要求1所述的方法,其进一步包括,在进行化学机械抛光CMP工艺以抛光所述晶圆的所述背面并移除所述铜挤出后,在所述晶圆的背面形成钝化层。
12.根据权利要求1所述的方法,其进一步包括,在进行化学机械抛光CMP工艺以抛光所述晶圆的所述背面并移除所述铜挤出后,在所述晶圆的背面形成另一重分布层RDL。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/002,404 US9899260B2 (en) | 2016-01-21 | 2016-01-21 | Method for fabricating a semiconductor device |
US15/002,404 | 2016-01-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106992144A CN106992144A (zh) | 2017-07-28 |
CN106992144B true CN106992144B (zh) | 2019-07-19 |
Family
ID=59359147
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610210325.1A Active CN106992144B (zh) | 2016-01-21 | 2016-04-06 | 半导体装置的制作方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9899260B2 (zh) |
CN (1) | CN106992144B (zh) |
TW (1) | TWI606528B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016112977B4 (de) * | 2016-07-14 | 2023-11-09 | Infineon Technologies Ag | Verfahren zum Bearbeiten eines Halbleiter-Wafers oder mehrerer Halbleiter-Wafer und Schutzabdeckung zum Abdecken des Halbleiter-Wafers |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8603917B2 (en) * | 2010-10-28 | 2013-12-10 | Agency For Science, Technology And Research | Method of processing a wafer |
CN103545275A (zh) * | 2012-07-12 | 2014-01-29 | 中芯国际集成电路制造(上海)有限公司 | 硅通孔封装结构及形成方法 |
CN104425451A (zh) * | 2013-08-28 | 2015-03-18 | 台湾积体电路制造股份有限公司 | 具有衬底通孔结构的器件及其形成方法 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6806184B2 (en) * | 2002-11-08 | 2004-10-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method to eliminate copper hillocks and to reduce copper stress |
JP2005038971A (ja) * | 2003-07-17 | 2005-02-10 | Ebara Corp | 半導体装置及びその製造方法 |
JP2007243140A (ja) * | 2006-02-09 | 2007-09-20 | Renesas Technology Corp | 半導体装置、電子装置および半導体装置の製造方法 |
US7825517B2 (en) * | 2007-07-16 | 2010-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for packaging semiconductor dies having through-silicon vias |
KR100896883B1 (ko) * | 2007-08-16 | 2009-05-14 | 주식회사 동부하이텍 | 반도체칩, 이의 제조방법 및 이를 가지는 적층 패키지 |
US8304863B2 (en) * | 2010-02-09 | 2012-11-06 | International Business Machines Corporation | Electromigration immune through-substrate vias |
TW201214627A (en) | 2010-09-10 | 2012-04-01 | Soitec Silicon On Insulator | Methods of forming through wafer interconnects in semiconductor structures using sacrificial material and semiconductor structures formes by such methods |
US20120061794A1 (en) * | 2010-09-10 | 2012-03-15 | S.O.I. Tec Silicon On Insulator Technologies | Methods of forming through wafer interconnects in semiconductor structures using sacrificial material, and semiconductor structures formed by such methods |
EP2463896B1 (en) | 2010-12-07 | 2020-04-15 | IMEC vzw | Method for forming through-substrate vias surrounded by isolation trenches with an airgap and corresponding device |
TWI458072B (zh) | 2010-12-16 | 2014-10-21 | Soitec Silicon On Insulator | 將半導體構造直接黏附在一起之方法以及應用此等方法所形成之黏附半導體構造 |
JP5584146B2 (ja) * | 2011-01-20 | 2014-09-03 | 株式会社東芝 | 半導体装置およびその製造方法 |
WO2012114400A1 (ja) * | 2011-02-21 | 2012-08-30 | パナソニック株式会社 | 集積回路 |
EP2535929A1 (en) | 2011-06-14 | 2012-12-19 | Atotech Deutschland GmbH | Wire bondable surface for microelectronic devices |
US8487425B2 (en) | 2011-06-23 | 2013-07-16 | International Business Machines Corporation | Optimized annular copper TSV |
TWI476888B (zh) * | 2011-10-31 | 2015-03-11 | Unimicron Technology Corp | 嵌埋穿孔中介層之封裝基板及其製法 |
KR20130053338A (ko) * | 2011-11-15 | 2013-05-23 | 삼성전자주식회사 | Tsv 구조를 구비한 집적회로 소자 |
EP2859585A4 (en) * | 2012-06-07 | 2016-01-27 | Rensselaer Polytech Inst | USE OF CONTINUOUSLY CONDUCTIVE ELASTIC DAMPING TO REDUCE THE STRENGTH OF SILICON CROSSCUT INTERCONNECTIONS (STIs) IN THREE DIMENSIONAL INTEGRATION |
TWI534876B (zh) | 2012-06-18 | 2016-05-21 | 聯華電子股份有限公司 | 半導體結構製造方法 |
US8980688B2 (en) * | 2012-06-28 | 2015-03-17 | Soitec | Semiconductor structures including fluidic microchannels for cooling and related methods |
US9165887B2 (en) * | 2012-09-10 | 2015-10-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device with discrete blocks |
US9209156B2 (en) | 2012-09-28 | 2015-12-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three dimensional integrated circuits stacking approach |
US20140117545A1 (en) * | 2012-10-26 | 2014-05-01 | Globalfoundries Singapore Pte. Ltd | Copper hillock prevention with hydrogen plasma treatment in a dedicated chamber |
KR20140073163A (ko) * | 2012-12-06 | 2014-06-16 | 삼성전자주식회사 | 반도체 장치 및 그의 형성방법 |
KR20140104778A (ko) * | 2013-02-21 | 2014-08-29 | 삼성전자주식회사 | 관통전극을 갖는 반도체 소자의 제조방법 |
KR20140140390A (ko) * | 2013-05-29 | 2014-12-09 | 삼성전자주식회사 | 관통전극을 갖는 반도체 소자의 제조방법 |
CN103280427B (zh) * | 2013-06-13 | 2016-08-10 | 华进半导体封装先导技术研发中心有限公司 | 一种tsv正面端部互连工艺 |
FR3007197B1 (fr) * | 2013-06-18 | 2016-12-09 | St Microelectronics Crolles 2 Sas | Procede de realisation d'une liaison electrique traversante et d'un condensateur traversant dans un substrat, et dispositif correspondant |
US8980746B2 (en) | 2013-08-13 | 2015-03-17 | Lam Research Corporation | Adhesion layer for through silicon via metallization |
KR102261814B1 (ko) * | 2014-06-16 | 2021-06-07 | 삼성전자주식회사 | 반도체 패키지의 제조 방법 |
-
2016
- 2016-01-21 US US15/002,404 patent/US9899260B2/en active Active
- 2016-03-15 TW TW105107836A patent/TWI606528B/zh active
- 2016-04-06 CN CN201610210325.1A patent/CN106992144B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8603917B2 (en) * | 2010-10-28 | 2013-12-10 | Agency For Science, Technology And Research | Method of processing a wafer |
CN103545275A (zh) * | 2012-07-12 | 2014-01-29 | 中芯国际集成电路制造(上海)有限公司 | 硅通孔封装结构及形成方法 |
CN104425451A (zh) * | 2013-08-28 | 2015-03-18 | 台湾积体电路制造股份有限公司 | 具有衬底通孔结构的器件及其形成方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201727783A (zh) | 2017-08-01 |
TWI606528B (zh) | 2017-11-21 |
US9899260B2 (en) | 2018-02-20 |
US20170213764A1 (en) | 2017-07-27 |
CN106992144A (zh) | 2017-07-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102552215B1 (ko) | 마이크로 전자 어셈블리를 형성하는 방법 | |
US11955445B2 (en) | Metal pads over TSV | |
US9167694B2 (en) | Ultra-thin interposer assemblies with through vias | |
TW201843772A (zh) | 多金屬接觸結構 | |
Shorey et al. | Advancements in fabrication of glass interposers | |
US20180269141A1 (en) | Chip-size, double side connection package and method for manufacturing the same | |
US20240088121A1 (en) | Patch accommodating embedded dies having different thicknesses | |
TW201208133A (en) | Methods of forming semiconductor elements using micro-abrasive particle stream | |
KR20140050507A (ko) | 팬 아웃 웨이퍼 레벨 패키지 구조 | |
CN104966677B (zh) | 扇出型芯片封装器件及其制备方法 | |
TW201205759A (en) | Microelectronic elements having metallic pads overlying vias | |
US9673064B2 (en) | Interposer with lattice construction and embedded conductive metal structures | |
TWI731186B (zh) | 半導體封裝及製作半導體封裝、重佈線層及內連結構的方法 | |
US20190006250A1 (en) | Fabrication of a sacrificial interposer test structure | |
US20130249047A1 (en) | Through silicon via structure and method for fabricating the same | |
US10943887B2 (en) | Staggered die stacking across heterogeneous modules | |
CN106992144B (zh) | 半导体装置的制作方法 | |
US7759165B1 (en) | Nanospring | |
TWM531651U (zh) | 無基板中介層及應用彼之半導體裝置 | |
CN104143527A (zh) | 一种导电插塞和tsv的形成方法 | |
Zhang et al. | Copper electroplating technique for efficient manufacturing of low-cost silicon interposers | |
TW202234533A (zh) | 晶片封裝結構與其形成方法 | |
TWI572268B (zh) | 中介板及其製造方法 | |
CN109346419B (zh) | 半导体器件及其制造方法 | |
TW201739011A (zh) | 無基板中介層及應用彼之半導體裝置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |