CN106972091A - It is a kind of for LED chip electrode structure of full angle luminescent device and preparation method thereof - Google Patents
It is a kind of for LED chip electrode structure of full angle luminescent device and preparation method thereof Download PDFInfo
- Publication number
- CN106972091A CN106972091A CN201710293136.XA CN201710293136A CN106972091A CN 106972091 A CN106972091 A CN 106972091A CN 201710293136 A CN201710293136 A CN 201710293136A CN 106972091 A CN106972091 A CN 106972091A
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- Prior art keywords
- layers
- led chip
- full angle
- luminescent device
- electrode structure
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 34
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000012780 transparent material Substances 0.000 claims abstract description 6
- 239000004411 aluminium Substances 0.000 claims abstract description 5
- 238000010276 construction Methods 0.000 claims abstract description 5
- 238000001704 evaporation Methods 0.000 claims abstract description 4
- 230000008020 evaporation Effects 0.000 claims abstract description 4
- 229910000679 solder Inorganic materials 0.000 claims description 8
- 229910018125 Al-Si Inorganic materials 0.000 claims description 5
- 229910018520 Al—Si Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000003475 lamination Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910018182 Al—Cu Inorganic materials 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000003466 welding Methods 0.000 abstract description 6
- 238000004020 luminiscence type Methods 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 3
- 238000005476 soldering Methods 0.000 abstract description 3
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000007769 metal material Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 241000218202 Coptis Species 0.000 description 2
- 235000002991 Coptis groenlandica Nutrition 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920006335 epoxy glue Polymers 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The invention discloses LED chip electrode structure for full angle luminescent device and preparation method thereof, including the aluminum alloy anode that new chip electrode structure is stepped construction, the aluminum alloy anode structure be stack gradually Cr layers, Al layers, Ti layers, the layer structure of the composition such as Al layers or Al alloy-layers.The preparation method of the aluminum alloy anode comprises the following steps：The layer structure of evaporation or the composition such as sputter Cr, Al, Ti, Al or Al alloy successively on the gallium nitride of LED chip electrode surface, metal or transparent material medium.The novel aluminum alloy electrode can realize that full angle luminescence chip welds or reached by aluminium ultra-sonic welded the purpose of low cost welding on the premise of soldering reliability is improved or by the aluminum wire bonding of low cost.
Description
Technical field
The present invention relates to a kind of LED chip structure and preparation method thereof, especially a kind of LED chip for having six faces luminous
And its with stacking aluminium alloy structure for LED chip electrode structure of full angle luminescent device and preparation method thereof.
Background technology
At present, LED filament is the luminous light source of a full angle, general straight using packed LED chip or flip LED chips
Connect and be mounted on transparent or metallic support, the mode of line can be gold thread bonding（Formal dress）Or solder welding（Upside-down mounting）, it
The total incapsulation of silica gel or epoxy glue or fluorescent glue is carried out again afterwards, it is achieved thereby that the luminous LED filament of full angle.This company of requiring
Connect circuit or there is high transparency attribute without substrate media or substrate media, while LED chip also requires that full angle lights, it is traditional
Flip-chip is used for filament lamp because chip structure contains reflecting layer and electrode is excessive, cause can only five faces light, it is impossible to realize
Filament full angle uniformly light-emitting, as shown in Fig. 2 including electrode 1；Reflecting layer 2；Luminous zone 6；Traditional positive cartridge chip is used for filament
Lamp can only realize that circuit is connected by gold thread bonding, and routing process costs are higher, as shown in figure 4, including electrode 1；Luminous zone 6.
The content of the invention
It is an object of the invention to solve the shortcoming and defect of above-mentioned prior art there is provided one kind to be used for full angle photophore
The LED chip electrode structure of part, the LED chip electrode structure for being used for full angle luminescent device can realize full angle luminescence chip
Weld on the premise of soldering reliability is improved or by the aluminum wire bonding of low cost or low cost is reached by aluminium ultra-sonic welded
The purpose of welding.Meanwhile, the welding characteristic for the aluminum alloy anode structure that the present invention is used can reduce the requirement to weld pad size, from
And the emitting brightness of solder side is further improved, beneficial to the full angle light extraction of device, more efficient, cost is lower.
The present invention solve its technical problem use technical scheme for：A kind of LED chip for full angle luminescent device
Electrode structure, including LED chip, in LED chip provided with two solders side, each solder side is provided with and is laminated by sandwich construction
The aluminum alloy anode of composition；Described aluminum alloy anode include successively since the pre-prepared electrode surface of chip be laminated Cr layers,
First Al layers, Ti layers, the 2nd Al layers or Al alloy-layers.
Further, the Cr layers of the LED chip electrode surface have gallium nitride medium, metal medium or transparent material
Medium.
Further, described aluminum alloy anode structure be stack gradually Cr layers, the first Al layers, Ti layers, the 2nd Al layers
Layer structure.The LED chip is flip chip structure.
Either, described aluminum alloy anode structure is Cr layers, the first Al layers, Ti layers, the Al alloy-layer grown successively
Layer structure.The LED chip is formal dress chip structure.
Further, described Al alloy-layers are Al-Si or made of Al-Cu alloy layer.
Further, described Cr layers, the first Al layers, Ti layers, the thickness of the layer structure of the 2nd Al layers or Al alloy-layers
Respectively：Cr thickness degree be 1-100A, the first Al thickness degree be 10-10000A, Ti thickness degree be 0-10000A, the 2nd Al layers or
Al alloy layer thicknesses are 100-100000A.
In addition, the invention further relates to the preparation method of the LED chip electrode structure for full angle luminescent device, the preparation
The step of method is：
Successively on the gallium nitride medium, metal medium or transparent material medium of the pre-prepared electrode surface of chip be laminated Cr layers, first
Al layers, Ti layers, the aluminum alloy anode of the 2nd Al layers or Al alloy-layers formation stepped construction, every Rotating fields of aluminum alloy anode adopt
Mode lamination with evaporation or sputter is secondary, forms the LED chip structure with aluminum alloy anode.
In summary, the LED chip electrode structure for full angle luminescent device of the invention can realize that full angle lights
Chip is welded or reached by aluminium ultra-sonic welded low on the premise of soldering reliability is improved or by the aluminum wire bonding of low cost
The purpose of cost welding.Meanwhile, the welding characteristic for the aluminum alloy anode structure that the present invention is used can be reduced to be wanted to weld pad size
Ask, so as to further improve the emitting brightness of solder side, beneficial to the full angle light extraction of device, more efficient, cost is lower.
Brief description of the drawings
Below in conjunction with the accompanying drawings, and by reference to following detailed description, the present invention will be better understood and its advantage is understood
And feature, accompanying drawing be used for illustrate the present invention, be not intended to limit the present invention；Representing the accompanying drawing of structure may be not necessarily drawn to scale；And
And, in accompanying drawing, same or similar element indicates same or similar label：
Fig. 1 uses the schematic diagram of flip LED chips structure for the LED chip structure of the full angle luminescent device of the present invention；
Fig. 2 is in the prior art using the schematic diagram of Conventional flip LED chip structure；
Fig. 3 uses the schematic diagram of forward LED chip structure for the LED chip structure of full angle luminescent device of the present invention；
Fig. 4 is in the prior art using the schematic diagram of traditional forward LED chip structure.
Embodiment
Embodiment 1
A kind of LED chip electrode structure for full angle luminescent device described described in the present embodiment 1, as shown in figure 1, LED
Chip is flip chip structure, and the flip chip structure is full angle luminescence chip, is set on the luminous zone 6 of flip chip structure
The layer structure for having electrode structure to be aluminium alloy, includes Cr layers 01, the first Al layers 02, Ti layers 03, the 2nd Al layers 04 of the bottom.
In addition, the present embodiment 1 further relates to the preparation method of the LED chip electrode structure for full angle luminescent device, should
The step of preparation method is：
Successively on the gallium nitride medium, metal medium or transparent material medium of the pre-prepared electrode surface of chip be laminated Cr layers, first
Al layers, Ti layers, the aluminum alloy anode of the 2nd Al layers of formation stepped construction, every Rotating fields of aluminum alloy anode are using evaporation mode
Lamination is secondary, forms the LED chip structure with aluminum alloy anode.
Embodiment 2
The present embodiment 2, which is, to be changed on the basis of embodiment, and difference is aluminum alloy anode in LED core plate electrode
Overlapped way on face is different, specific as follows：
As shown in figure 1, the layer structure of the aluminium alloy includes Cr layers 01, the first Al layers 02, Al layers of the Ti layers the 03, the 2nd of the bottom
04, it is laminated successively by the way of sputter on LED chip electrode surface.
Embodiment 3
A kind of LED chip electrode structure for full angle luminescent device described by the present embodiment 3, as shown in figure 3, LED core
Piece is formal dress chip structure, and the formal dress chip structure is full angle luminescence chip, is provided with the luminous zone 6 of formal dress chip structure
Electrode structure is the layer structure of aluminium alloy, with new aluminum alloy anode structure, the electrode structure bag of formal dress chip structure
Include Cr layers 01, the first Al layers 02, Ti layers 03, the Al-Si alloy-layers 05 of the bottom.
Cr layers, Al layers, Ti layers, the coating such as Al-Si alloy-layers are deposited successively in the electrode surface of formal dress chip structure.
Embodiment 4
The present embodiment 4 is transformed on the basis of embodiment 3, and difference is aluminum alloy anode in LED core plate electrode
Overlapped way on face is different, specific as follows：
As shown in figure 3, Cr layers 01, the first Al layers 02, Ti layers 03, Al-Si that the layer structure of the aluminium alloy includes the bottom are closed
Layer gold 05, is laminated by the way of sputter successively on LED chip solder side.
The above described is only a preferred embodiment of the present invention, not making any formal to the structure of the present invention
Limitation.Any simple modification, equivalent variations and modification that every technical spirit according to the present invention is made to above example,
In the range of still falling within technical scheme.
Claims (9)
1. a kind of LED chip electrode structure for full angle luminescent device, it is characterised in that including LED chip, in LED core
Piece is provided with the aluminum alloy anode being stacked by multiple layer provided with two solders side, each solder side；Described aluminium is closed
Gold electrode includes Cr layers, the first Al layers, Ti layers, the 2nd Al layers or the Al alloy-layers being laminated successively since electrode surface.
2. the LED chip electrode structure according to claim 1 for full angle luminescent device, it is characterised in that described
The Cr layers of LED chip electrode surface have gallium nitride medium, metal medium or a transparent material medium.
3. the LED chip electrode structure according to claim 2 for full angle luminescent device, it is characterised in that described
Aluminum or aluminum alloy layer electrode structure be stack gradually Cr layers, the first Al layers, Ti layers, the 2nd Al layers of layer structure.
4. the LED chip electrode structure according to claim 2 for full angle luminescent device, it is characterised in that described
Aluminium lamination or aluminium alloy layer electrode structure be Cr layers, the first Al layers, Ti layers, the layer structure of Al alloy-layers grown successively.
5. the LED chip electrode structure according to claim 3 for full angle luminescent device, it is characterised in that described
LED chip be flip chip structure.
6. the LED chip electrode structure according to claim 4 for full angle luminescent device, it is characterised in that described
LED chip is formal dress chip structure.
7. the LED chip electrode structure according to claim 7 for full angle luminescent device, it is characterised in that described
Al alloy-layers for Al-Si alloy-layers or made of Al-Cu alloy layer.
8. the LED chip electrode structure for full angle luminescent device according to claim 1 to 8 any one, it is special
Levy and be, described Cr layers, the first Al layers, Ti layers, the thickness of the layer structure of the 2nd Al layers or Al alloy-layers be respectively：Cr layers
Thickness is 1-100A, and the first Al thickness degree is 10-10000A, and Ti thickness degree is 0-10000A, the 2nd Al layers or Al alloy thickness
Spend for 100-100000A.
9. a kind of preparation method of the LED chip electrode structure according to claim 1 for full angle luminescent device, its feature
It is, is the step of the preparation method：
Successively on the gallium nitride medium, metal medium or transparent material medium of the pre-prepared electrode surface of chip be laminated Cr layers, first
Al layers, Ti layers, the aluminum alloy anode of the 2nd Al layers or Al alloy-layers formation stepped construction, every Rotating fields of aluminum alloy anode adopt
Mode lamination with evaporation or sputter is secondary, forms the LED chip structure with aluminum alloy anode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710293136.XA CN106972091A (en) | 2017-04-28 | 2017-04-28 | It is a kind of for LED chip electrode structure of full angle luminescent device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710293136.XA CN106972091A (en) | 2017-04-28 | 2017-04-28 | It is a kind of for LED chip electrode structure of full angle luminescent device and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN106972091A true CN106972091A (en) | 2017-07-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710293136.XA Pending CN106972091A (en) | 2017-04-28 | 2017-04-28 | It is a kind of for LED chip electrode structure of full angle luminescent device and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115064628A (en) * | 2022-08-17 | 2022-09-16 | 泉州三安半导体科技有限公司 | Flip-chip light emitting diode and light emitting device |
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| CN105552191A (en) * | 2016-02-02 | 2016-05-04 | 厦门乾照光电股份有限公司 | Light emitting diode (LED) chip electrode structure capable of promoting transverse current diffusion and with dual reflection surfaces |
| CN105633238A (en) * | 2016-04-07 | 2016-06-01 | 深圳市天瑞和科技发展有限公司 | Inverted LED (light emitting diode) chip and manufacturing method thereof |
| CN205488194U (en) * | 2016-01-20 | 2016-08-17 | 华灿光电股份有限公司 | Electrode and emitting diode chip of emitting diode chip |
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-
2017
- 2017-04-28 CN CN201710293136.XA patent/CN106972091A/en active Pending
Patent Citations (8)
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| CN1851941A (en) * | 2006-04-30 | 2006-10-25 | 普光科技（广州）有限公司 | Method for making gallium nitride light-emitting-diode chip |
| CN101132111A (en) * | 2006-08-23 | 2008-02-27 | 中国科学院半导体研究所 | Manufacturing method for gallium nitride based blue laser device |
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| CN115064628B (en) * | 2022-08-17 | 2023-01-06 | 泉州三安半导体科技有限公司 | Flip-chip light emitting diode and light emitting device |
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Application publication date: 20170721 |
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