CN101000942A - Electrode of gallium nitride base III-V. class compound semiconductor - Google Patents
Electrode of gallium nitride base III-V. class compound semiconductor Download PDFInfo
- Publication number
- CN101000942A CN101000942A CNA2006101665633A CN200610166563A CN101000942A CN 101000942 A CN101000942 A CN 101000942A CN A2006101665633 A CNA2006101665633 A CN A2006101665633A CN 200610166563 A CN200610166563 A CN 200610166563A CN 101000942 A CN101000942 A CN 101000942A
- Authority
- CN
- China
- Prior art keywords
- electrode
- layer
- gan
- compound semiconductor
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Led Devices (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006101665633A CN100403568C (en) | 2006-12-30 | 2006-12-30 | Electrode of gallium nitride base III-V. class compound semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006101665633A CN100403568C (en) | 2006-12-30 | 2006-12-30 | Electrode of gallium nitride base III-V. class compound semiconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101000942A true CN101000942A (en) | 2007-07-18 |
CN100403568C CN100403568C (en) | 2008-07-16 |
Family
ID=38692818
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101665633A Active CN100403568C (en) | 2006-12-30 | 2006-12-30 | Electrode of gallium nitride base III-V. class compound semiconductor |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100403568C (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101771114B (en) * | 2009-01-04 | 2012-03-07 | 厦门市三安光电科技有限公司 | Vertical light-emitting diode with new compound stacked barrier layer metal structure and preparation method thereof |
CN102916100A (en) * | 2012-11-08 | 2013-02-06 | 安徽三安光电有限公司 | Light emitting diode and manufacturing method thereof |
CN103280501A (en) * | 2013-05-22 | 2013-09-04 | 上海蓝光科技有限公司 | LED (light-emitting diode) chip and manufacturing method thereof |
CN104103733A (en) * | 2014-06-18 | 2014-10-15 | 华灿光电(苏州)有限公司 | Inverted light emitting diode chip and fabrication method thereof |
CN105070786A (en) * | 2015-07-28 | 2015-11-18 | 昆明物理研究所 | High temperature oxidation resistant lead-out electrode of reading circuit and preparation method of electrode |
CN105762242A (en) * | 2014-12-17 | 2016-07-13 | 晶能光电(江西)有限公司 | GaN-based thin-film LED chip and preparation method thereof |
CN105762245A (en) * | 2014-12-18 | 2016-07-13 | 晶能光电(江西)有限公司 | LED chip with high light emitting efficiency and preparation method thereof |
CN106972091A (en) * | 2017-04-28 | 2017-07-21 | 珠海市芯半导体科技有限公司 | It is a kind of for LED chip electrode structure of full angle luminescent device and preparation method thereof |
CN106981509A (en) * | 2017-04-06 | 2017-07-25 | 北京世纪金光半导体有限公司 | A kind of multilayer metallic electrode structure of silicon carbide power device |
CN111129251A (en) * | 2019-12-30 | 2020-05-08 | 广东德力光电有限公司 | Electrode structure of high-weldability flip LED chip |
CN115064628A (en) * | 2022-08-17 | 2022-09-16 | 泉州三安半导体科技有限公司 | Flip-chip light emitting diode and light emitting device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103441193B (en) * | 2013-08-29 | 2016-04-06 | 刘晶 | A kind of manufacture method of LED die plate electrode, LED pipe chip and LED pipe |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4024994B2 (en) * | 2000-06-30 | 2007-12-19 | 株式会社東芝 | Semiconductor light emitting device |
TWI224877B (en) * | 2003-12-25 | 2004-12-01 | Super Nova Optoelectronics Cor | Gallium nitride series light-emitting diode structure and its manufacturing method |
KR100682870B1 (en) * | 2004-10-29 | 2007-02-15 | 삼성전기주식회사 | Multi layer electrode and compound semiconductor light emitting device including the same |
-
2006
- 2006-12-30 CN CNB2006101665633A patent/CN100403568C/en active Active
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101771114B (en) * | 2009-01-04 | 2012-03-07 | 厦门市三安光电科技有限公司 | Vertical light-emitting diode with new compound stacked barrier layer metal structure and preparation method thereof |
CN102916100A (en) * | 2012-11-08 | 2013-02-06 | 安徽三安光电有限公司 | Light emitting diode and manufacturing method thereof |
CN102916100B (en) * | 2012-11-08 | 2015-04-08 | 安徽三安光电有限公司 | Light emitting diode and manufacturing method thereof |
CN103280501A (en) * | 2013-05-22 | 2013-09-04 | 上海蓝光科技有限公司 | LED (light-emitting diode) chip and manufacturing method thereof |
CN104103733A (en) * | 2014-06-18 | 2014-10-15 | 华灿光电(苏州)有限公司 | Inverted light emitting diode chip and fabrication method thereof |
CN105762242A (en) * | 2014-12-17 | 2016-07-13 | 晶能光电(江西)有限公司 | GaN-based thin-film LED chip and preparation method thereof |
CN105762245A (en) * | 2014-12-18 | 2016-07-13 | 晶能光电(江西)有限公司 | LED chip with high light emitting efficiency and preparation method thereof |
CN105070786A (en) * | 2015-07-28 | 2015-11-18 | 昆明物理研究所 | High temperature oxidation resistant lead-out electrode of reading circuit and preparation method of electrode |
CN106981509A (en) * | 2017-04-06 | 2017-07-25 | 北京世纪金光半导体有限公司 | A kind of multilayer metallic electrode structure of silicon carbide power device |
CN106972091A (en) * | 2017-04-28 | 2017-07-21 | 珠海市芯半导体科技有限公司 | It is a kind of for LED chip electrode structure of full angle luminescent device and preparation method thereof |
CN111129251A (en) * | 2019-12-30 | 2020-05-08 | 广东德力光电有限公司 | Electrode structure of high-weldability flip LED chip |
CN115064628A (en) * | 2022-08-17 | 2022-09-16 | 泉州三安半导体科技有限公司 | Flip-chip light emitting diode and light emitting device |
CN115064628B (en) * | 2022-08-17 | 2023-01-06 | 泉州三安半导体科技有限公司 | Flip-chip light emitting diode and light emitting device |
Also Published As
Publication number | Publication date |
---|---|
CN100403568C (en) | 2008-07-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100403568C (en) | Electrode of gallium nitride base III-V. class compound semiconductor | |
JP4183299B2 (en) | Gallium nitride compound semiconductor light emitting device | |
US8648380B2 (en) | Light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same | |
US9356213B2 (en) | Manufacturing method of a light-emitting device having a patterned substrate | |
US8685764B2 (en) | Method to make low resistance contact | |
CN103430335A (en) | Semiconductor light-emitting element and method of manufacturing thereof | |
CN104813490A (en) | Light-emitting device having excellent current spreading effect and method for manufacturing same | |
KR20080015794A (en) | Ingaaln light-emitting device and manufacturing method thereof | |
CN103283003B (en) | Semiconductor device and manufacture method thereof | |
US9362446B2 (en) | Semiconductor light-emitting device | |
JP2013048200A (en) | GaN-BASED LED ELEMENT | |
US9997670B2 (en) | Semiconductor light emitting device package | |
TW201743467A (en) | Light emitting device | |
US10263140B2 (en) | Semiconductor light-emitting device and method for manufacturing the same | |
JP5471485B2 (en) | Nitride semiconductor device and pad electrode manufacturing method for nitride semiconductor device | |
JP5988489B2 (en) | Semiconductor device and manufacturing method thereof | |
WO2015174924A1 (en) | Method of forming a light-emitting device | |
CN105990476B (en) | Semiconductor light emitting element | |
JP6462274B2 (en) | Semiconductor light emitting device | |
TW201711220A (en) | Semiconductor light emitting device | |
TW201340397A (en) | Light emitting diode and manufacturing method thereof | |
KR20090111889A (en) | Fabrication of vertical structured light emitting diodes using group 3 nitride-based semiconductors and its related methods | |
CN1581519A (en) | Gallium nitride III-V family compound light-emitting diode manufacturing method | |
JP2015233086A (en) | Semiconductor light emitting element and manufacturing method of the same | |
JP2015138836A (en) | Light emitting element manufacturing method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: HC SEMITEK CORPORATION Free format text: FORMER NAME: HUACAN PHOTOELECTRIC CO., LTD., WUHAN |
|
CP01 | Change in the name or title of a patent holder |
Address after: 430223 Hubei city of Wuhan province Wuhan University Science Park East Lake New Technology Development Zone business building room 2015 Patentee after: HC SemiTek Corporation Address before: 430223 Hubei city of Wuhan province Wuhan University Science Park East Lake New Technology Development Zone business building room 2015 Patentee before: Huacan Photoelectric Co., Ltd., Wuhan |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191225 Address after: 215600 Huacan photoelectric (Suzhou) Co., Ltd., CHENFENG Road, Zhangjiagang Economic Development Zone, Suzhou City, Jiangsu Province Patentee after: Huacan Photoelectric (Suzhou) Co., Ltd. Address before: 430223 Hubei city of Wuhan province Wuhan University Science Park East Lake New Technology Development Zone business building room 2015 Patentee before: HC SemiTek Corporation |
|
DD01 | Delivery of document by public notice | ||
DD01 | Delivery of document by public notice |
Addressee: Yang Chunyan Document name: Notification of Passing Examination on Formalities |