CN1581519A - Gallium nitride III-V family compound light-emitting diode manufacturing method - Google Patents
Gallium nitride III-V family compound light-emitting diode manufacturing method Download PDFInfo
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- CN1581519A CN1581519A CNA031391036A CN03139103A CN1581519A CN 1581519 A CN1581519 A CN 1581519A CN A031391036 A CNA031391036 A CN A031391036A CN 03139103 A CN03139103 A CN 03139103A CN 1581519 A CN1581519 A CN 1581519A
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- gallium nitride
- electrode
- pad
- emitting diode
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 37
- 229910002601 GaN Inorganic materials 0.000 title claims description 35
- 150000001875 compounds Chemical class 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 230000004888 barrier function Effects 0.000 claims abstract description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 6
- 238000001259 photo etching Methods 0.000 abstract description 4
- 230000008016 vaporization Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000005622 photoelectricity Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- -1 InGaN (AlGaN) Chemical compound 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
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- Led Devices (AREA)
Abstract
Characters of the invention are that N type ohm contact electrode, metal barrier layer and N type bonding pads are formed at one step. Moreover, P type bonding pads are formed at same time when N type bonding pads are prepared. Advantages are: reducing number of time for vaporizing, photo-etching and heat processing steps, simplifying procedure, raising rate of finished products and quality of bonding pads, and lowering cost.
Description
One, technical field
The present invention relates to a kind of gallium nitride (GaN) based III-V group compound manufacturing method for LED
Two, background technology
Compound semiconductor element is having been widely used aspect communication and the display, owing to the demand to blue light source, gallium nitride-based III-V group compound semiconductor (GaN based III-Vcompound semiconductor device) becomes the research and development emphasis especially in recent years.Light-emitting diode generally adopts gallium nitride (GaN), InGaN (AlGaN), aluminium gallium nitride alloy gallium nitride-based III-V group compound semiconductor materials such as (AlInGaN) at present.This class luminescent device has the laminated construction at the P type gallium nitride system compound semiconductor layer of the on-chip n type gallium nitride based compound semiconductor layer and the superiors usually.In the technology that LED device is made, generally be on P type gallium nitride layer, to make P type electrode earlier and it is heat-treated, make it and P type gallium nitride layer forms ohmic contact; On the n type gallium nitride layer, make N type electrode then and it is heat-treated, make it and the n type gallium nitride layer forms ohmic contact; The last pad that is used for the welding wire welding of on P, N electrode, making.Disclosed product of Chinese patent ZL.94106935.4 and preparation method thereof promptly is the typical case of this manufacture craft.Do like this and need carry out repeatedly photoetching, evaporation and alloy, technological level complexity not only, the cost height, and because repeatedly photoetching and heat treatment in the technical process easily reduces the rate of finished products of device, and make the pad quality descend.
Three, summary of the invention:
For overcoming above deficiency, the present invention proposes a kind of gallium nitride-based III-V group compound manufacturing method for LED, is to form in N type Ohm contact electrode, metal barrier and one step of N type pad, and when making N type electrode pad, can forms P type pad simultaneously.
The present invention finishes like this: as Fig. 1, gallium nitride light-emitting diode comprises: substrate 10, and fold in the n type gallium nitride layer 11 on the substrate, luminescent layer 12 and fold P type gallium nitride layer 13 on luminescent layer.(RIE) will corrode into a platform with the reactive ion etching method.On whole P type gallium nitride layer, evaporate layer of transparent electrode 14, and it is heat-treated, make it and P type gallium nitride layer formation ohmic contact.Be evaporated in regular turn on the semiconductor the metal material of N type Ohm contact electrode, metal barrier, N type pad is disposable then, adopt metal lift-off material at last, a step forms N type Ohm contact electrode, metal barrier and N type pad 15.The metal of selecting the Titanium, at least a metal in the aluminium of low-power function or being made of titanium, nickel, aluminium is as N type Ohm contact electrode, makes it and the n type gallium nitride layer forms ohmic contact.Select the material of gold as pad for use, making it has good adhesiveness with the soldered ball that is formed by spun gold.Between N type Ohm contact electrode and N type pad, make the metal barrier that one deck is formed by at least a metal in titanium, nickel, the platinum, to stop the infiltration of gold.This N type electrode pad is not heat-treated.This N type electrode carries out 400 ℃ of following Low Temperature Heat Treatment, intensifier electrode and semi-conductive adhesiveness.
The N type electrode pad that adopts the present invention to form need not heat treatment or Low Temperature Heat Treatment, just can form good Ohmic contact with n type gallium nitride.Therefore when making N type electrode pad, can form P type pad 16 simultaneously.Because the heat treatment meeting more than 400 ℃ makes P type electrode and P type pad material form alloy, cause P type electrode pad and P type gallium nitride to form Schottky contacts.
Major advantage of the present invention is all not have under the situation of decline in each side such as device performance and stability, reduce evaporation, photoetching and heat treated number of times, simplified technology, improved rate of finished products, reduce production costs, and improved the quality of pad owing to no heat treatment or Low Temperature Heat Treatment.
Four, description of drawings:
Fig. 1, a kind of component structure figure that manufacture method of the present invention is made
Fig. 2, Fig. 3 are the N electrode of the embodiment of the invention 1 and the electric current of P electrode---voltage characteristic figure
Fig. 4, Fig. 5 are the N electrode of the embodiment of the invention 2 and the electric current of P electrode---voltage characteristic figure
Wherein: 10 substrates, 11N type GaN, 12 luminous zones, 13P type GaN, 14 transparency electrodes, 15N type electrode pad, 16P type pad
Five, embodiment:
Embodiment 1
On a gallium nitride light-emitting diode epitaxial wafer, with n type gallium nitride layer 11, luminescent layer 12 and the P type gallium nitride layer of folding thereon 13 corrode into a platform-like (as Fig. 1) with the reactive ion etching method.Evaporation last layer transparency electrode 14 on whole P type gallium nitride layer, and it is heat-treated make it and P type gallium nitride layer forms ohmic contact.Evaporating Ti/Al/Pt/Au on n type gallium nitride layer that exposes and the P type electrode in regular turn then, thickness is respectively 0.3/5/0.5/15kA, adopts metal lift-off material at last, forms N type Ohm contact electrode, metal barrier and N type pad and P type pad.Electric current-the voltage characteristic of this N electrode and P electrode is seen accompanying drawing 2 and accompanying drawing 3.As seen from the figure, this N electrode and n type gallium nitride layer have formed good Ohmic contact, and P electrode and P type gallium nitride layer have also formed good Ohmic contact.The photoelectricity test result has shown that also the light-emitting diode of making according to the present invention is at the basically identical as a result (seeing attached list 1) that separates traditional light-emitting diode manufacturing process making of making aspect the photoelectric properties with N type electrode Ohm contact electrode and N type pad.
Subordinate list 1
| Technology | IVavg | ?VFavg | ?WLDavg | ?IRavg |
| Technology of the present invention | 43.2 | ?3.35 | ?463.5 | ?0.03 |
| Traditional technology | 44.7 | ?3.36 | ?465.8 | ?0.03 |
Embodiment 2
Select Ti/Al/Ni/Au for use, thickness is respectively 0.3/5/0.5/15kA, carries out the experiment identical with embodiment 1.Electric current-the voltage characteristic of this N electrode and P electrode is seen accompanying drawing 4 and accompanying drawing 5.As seen from the figure, this N electrode and n type gallium nitride layer have formed good Ohmic contact, and P electrode and P type gallium nitride layer have also formed good Ohmic contact.The photoelectricity test result has also shown the basically identical of making according to the light-emitting diode of the present invention's making and conventional fabrication processes as a result (seeing attached list 2).
Subordinate list 2
| Technology | IVavg | ?VFavg | ?WLDavg | ?IRavg |
| Technology of the present invention | 45.0 | ?3.36 | ?464.7 | ?0.03 |
| Traditional technology | 45.8 | ?3.38 | ?466.6 | ?0.04 |
Should be understood that above specific embodiments is each preferred embodiment of the present invention, scope of the present invention is not limited to these preferred embodiments, and is all according to any change that the present invention did, and all belongs to this
Within the scope of invention.
Claims (2)
1, a kind of gallium nitride-based III-V group compound manufacturing method for LED is characterized in that:
N type Ohm contact electrode, metal barrier and one step of N type pad form.
N type Ohm contact electrode material comprises at least a metal in titanium, the aluminium.
N type Ohm contact electrode is to be formed by the metal material that titanium, nickel, aluminium constitute.
The metal barrier layer material comprises at least a metal in titanium, nickel, the platinum.
N type pad forms with gold.
2, a kind of gallium nitride-based III-V group compound manufacturing method for LED as claimed in claim 1 is characterized in that:
When making N type electrode pad, can form P type pad simultaneously.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031391036A CN1581519A (en) | 2003-08-12 | 2003-08-12 | Gallium nitride III-V family compound light-emitting diode manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031391036A CN1581519A (en) | 2003-08-12 | 2003-08-12 | Gallium nitride III-V family compound light-emitting diode manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1581519A true CN1581519A (en) | 2005-02-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA031391036A Pending CN1581519A (en) | 2003-08-12 | 2003-08-12 | Gallium nitride III-V family compound light-emitting diode manufacturing method |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1866559B (en) * | 2005-05-18 | 2010-09-01 | 三星电机株式会社 | Nitride semiconductor light emitting device |
| CN102820331A (en) * | 2011-06-10 | 2012-12-12 | 财团法人交大思源基金会 | Semiconductor device suitable for copper process |
| CN104064651A (en) * | 2013-03-20 | 2014-09-24 | 江苏扬景光电有限公司 | Light-emitting diode electrode structure and manufacturing process thereof |
| CN104064649A (en) * | 2013-03-20 | 2014-09-24 | 江苏扬景光电有限公司 | Light-emitting diode electrode structure and manufacturing method thereof |
| CN111129251A (en) * | 2019-12-30 | 2020-05-08 | 广东德力光电有限公司 | Electrode structure of high-weldability flip LED chip |
| CN112993063A (en) * | 2021-01-28 | 2021-06-18 | 湖北光安伦芯片有限公司 | Method for manufacturing ohmic contact electrode of optical communication chip |
-
2003
- 2003-08-12 CN CNA031391036A patent/CN1581519A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1866559B (en) * | 2005-05-18 | 2010-09-01 | 三星电机株式会社 | Nitride semiconductor light emitting device |
| CN102820331A (en) * | 2011-06-10 | 2012-12-12 | 财团法人交大思源基金会 | Semiconductor device suitable for copper process |
| CN102820331B (en) * | 2011-06-10 | 2016-03-09 | 财团法人交大思源基金会 | Semiconductor device suitable for copper process |
| CN104064651A (en) * | 2013-03-20 | 2014-09-24 | 江苏扬景光电有限公司 | Light-emitting diode electrode structure and manufacturing process thereof |
| CN104064649A (en) * | 2013-03-20 | 2014-09-24 | 江苏扬景光电有限公司 | Light-emitting diode electrode structure and manufacturing method thereof |
| CN111129251A (en) * | 2019-12-30 | 2020-05-08 | 广东德力光电有限公司 | Electrode structure of high-weldability flip LED chip |
| CN112993063A (en) * | 2021-01-28 | 2021-06-18 | 湖北光安伦芯片有限公司 | Method for manufacturing ohmic contact electrode of optical communication chip |
| CN112993063B (en) * | 2021-01-28 | 2022-08-19 | 湖北光安伦芯片有限公司 | Method for manufacturing ohmic contact electrode of optical communication chip |
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Owner name: SANAN OPTO-EELECTRICAL SCIENCE CO., LTD., XIAMEN Free format text: FORMER OWNER: SAN-AN ELECTRONICS CO., LTD., XIAMEN Effective date: 20080822 |
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Effective date of registration: 20080822 Address after: Siming District of Xiamen City, Fujian Province, Luling Road No. 1721-1725 post encoding: 361009 Applicant after: Xiamen San'an Photoelectric Technology Co., Ltd. Address before: The 3rd floor of Kaiyuan Kaiyuan Science Park, Xiamen, Fujian Province, China: 361009 Applicant before: Xiamen San'an Electronics Co., Ltd. |
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