CN106972076B - 制作光电二极管的方法、光电二极管及光感应器 - Google Patents
制作光电二极管的方法、光电二极管及光感应器 Download PDFInfo
- Publication number
- CN106972076B CN106972076B CN201610025128.2A CN201610025128A CN106972076B CN 106972076 B CN106972076 B CN 106972076B CN 201610025128 A CN201610025128 A CN 201610025128A CN 106972076 B CN106972076 B CN 106972076B
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- photodiode
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- semiconductor substrate
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- 238000000034 method Methods 0.000 title claims abstract description 80
- 230000003287 optical effect Effects 0.000 title claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 60
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 28
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 27
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 10
- 230000005622 photoelectricity Effects 0.000 claims abstract description 9
- 230000008021 deposition Effects 0.000 claims abstract description 7
- 238000001312 dry etching Methods 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 238000002161 passivation Methods 0.000 claims description 28
- 238000007254 oxidation reaction Methods 0.000 claims description 22
- 230000003647 oxidation Effects 0.000 claims description 21
- 238000001039 wet etching Methods 0.000 claims description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims description 16
- 239000012535 impurity Substances 0.000 claims description 13
- 238000002347 injection Methods 0.000 claims description 11
- 239000007924 injection Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 13
- 238000005516 engineering process Methods 0.000 abstract description 12
- 230000010354 integration Effects 0.000 abstract description 7
- 238000005530 etching Methods 0.000 abstract description 5
- 230000008859 change Effects 0.000 abstract description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 11
- 150000004706 metal oxides Chemical class 0.000 description 10
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000000407 epitaxy Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000035807 sensation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (13)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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CN201610025128.2A CN106972076B (zh) | 2016-01-14 | 2016-01-14 | 制作光电二极管的方法、光电二极管及光感应器 |
PCT/CN2016/096044 WO2017121117A1 (zh) | 2016-01-14 | 2016-08-19 | 制作光电二极管的方法、光电二极管及光感应器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610025128.2A CN106972076B (zh) | 2016-01-14 | 2016-01-14 | 制作光电二极管的方法、光电二极管及光感应器 |
Publications (2)
Publication Number | Publication Date |
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CN106972076A CN106972076A (zh) | 2017-07-21 |
CN106972076B true CN106972076B (zh) | 2018-10-12 |
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CN201610025128.2A Active CN106972076B (zh) | 2016-01-14 | 2016-01-14 | 制作光电二极管的方法、光电二极管及光感应器 |
Country Status (2)
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CN (1) | CN106972076B (zh) |
WO (1) | WO2017121117A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114284307B (zh) * | 2021-12-16 | 2023-10-13 | 杭州海康微影传感科技有限公司 | 光敏元件、制作方法、感光芯片、光敏探测器和检测装置 |
CN116154022B (zh) * | 2023-03-14 | 2024-03-22 | 江南大学 | 一种双层SiO2隔离的光电二极管结构、阵列及制造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100578644B1 (ko) * | 2004-05-06 | 2006-05-11 | 매그나칩 반도체 유한회사 | 프리즘을 구비한 시모스 이미지센서 및 그 제조방법 |
KR100745985B1 (ko) * | 2004-06-28 | 2007-08-06 | 삼성전자주식회사 | 이미지 센서 |
US20060214251A1 (en) * | 2005-03-18 | 2006-09-28 | Intersil Americas Inc. | Photodiodes with anti-reflection coating |
CN100495715C (zh) * | 2006-08-25 | 2009-06-03 | 联华电子股份有限公司 | 图像感测装置及其制作方法 |
KR100937662B1 (ko) * | 2007-12-24 | 2010-01-19 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조 방법 |
US7910961B2 (en) * | 2008-10-08 | 2011-03-22 | Omnivision Technologies, Inc. | Image sensor with low crosstalk and high red sensitivity |
KR20110073766A (ko) * | 2009-12-24 | 2011-06-30 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조방법 |
JP5810493B2 (ja) * | 2010-09-03 | 2015-11-11 | ソニー株式会社 | 半導体集積回路、電子機器、固体撮像装置、撮像装置 |
CN104362199B (zh) * | 2014-11-19 | 2017-01-04 | 中国电子科技集团公司第二十四研究所 | 用于单片光探测与电信号处理集成器件的基材结构及其形成方法 |
-
2016
- 2016-01-14 CN CN201610025128.2A patent/CN106972076B/zh active Active
- 2016-08-19 WO PCT/CN2016/096044 patent/WO2017121117A1/zh active Application Filing
Also Published As
Publication number | Publication date |
---|---|
CN106972076A (zh) | 2017-07-21 |
WO2017121117A1 (zh) | 2017-07-20 |
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TA01 | Transfer of patent application right |
Effective date of registration: 20170927 Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Applicant after: CSMC TECHNOLOGIES FAB2 Co.,Ltd. Address before: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Applicant before: CSMC TECHNOLOGIES FAB1 Co.,Ltd. |
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TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Method for making photodiodes, photodiodes, and photoreceptors Effective date of registration: 20231007 Granted publication date: 20181012 Pledgee: Bank of China Limited Wuxi Branch Pledgor: CSMC TECHNOLOGIES FAB2 Co.,Ltd. Registration number: Y2023980059915 |
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