CN106935491B - 一种激光退火装置及其退火方法 - Google Patents

一种激光退火装置及其退火方法 Download PDF

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Publication number
CN106935491B
CN106935491B CN201511021931.0A CN201511021931A CN106935491B CN 106935491 B CN106935491 B CN 106935491B CN 201511021931 A CN201511021931 A CN 201511021931A CN 106935491 B CN106935491 B CN 106935491B
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China
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laser
silicon wafer
annealing
temperature
light source
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Chinese (zh)
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CN106935491A (zh
Inventor
崔国栋
兰艳平
马明英
宋春峰
孙刚
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Shanghai Xinshang Microelectronics Technology Co ltd
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Shanghai Micro Electronics Equipment Co Ltd
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Priority to CN201511021931.0A priority Critical patent/CN106935491B/zh
Application filed by Shanghai Micro Electronics Equipment Co Ltd filed Critical Shanghai Micro Electronics Equipment Co Ltd
Priority to US16/067,353 priority patent/US20190015929A1/en
Priority to EP16881213.9A priority patent/EP3399543B1/en
Priority to PCT/CN2016/112662 priority patent/WO2017114424A1/zh
Priority to KR1020187021712A priority patent/KR102080613B1/ko
Priority to JP2018534060A priority patent/JP6831383B2/ja
Priority to TW105143862A priority patent/TW201729295A/zh
Publication of CN106935491A publication Critical patent/CN106935491A/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B23K26/034—Observing the temperature of the workpiece
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Laser Beam Processing (AREA)
CN201511021931.0A 2015-12-30 2015-12-30 一种激光退火装置及其退火方法 Active CN106935491B (zh)

Priority Applications (7)

Application Number Priority Date Filing Date Title
CN201511021931.0A CN106935491B (zh) 2015-12-30 2015-12-30 一种激光退火装置及其退火方法
EP16881213.9A EP3399543B1 (en) 2015-12-30 2016-12-28 Laser annealing device and annealing method therefor
PCT/CN2016/112662 WO2017114424A1 (zh) 2015-12-30 2016-12-28 一种激光退火装置及其退火方法
KR1020187021712A KR102080613B1 (ko) 2015-12-30 2016-12-28 레이저 어닐링 장치 및 그 어닐링 방법
US16/067,353 US20190015929A1 (en) 2015-12-30 2016-12-28 Laser annealing device and annealing method therefor
JP2018534060A JP6831383B2 (ja) 2015-12-30 2016-12-28 レーザーアニーリング装置及びそのためのレーザーアニーリング方法
TW105143862A TW201729295A (zh) 2015-12-30 2016-12-29 一種雷射退火裝置及其退火方法

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CN201511021931.0A CN106935491B (zh) 2015-12-30 2015-12-30 一种激光退火装置及其退火方法

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CN106935491A CN106935491A (zh) 2017-07-07
CN106935491B true CN106935491B (zh) 2021-10-12

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US (1) US20190015929A1 (https=)
EP (1) EP3399543B1 (https=)
JP (1) JP6831383B2 (https=)
KR (1) KR102080613B1 (https=)
CN (1) CN106935491B (https=)
TW (1) TW201729295A (https=)
WO (1) WO2017114424A1 (https=)

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CN109686686B (zh) * 2019-01-30 2024-06-14 北京华卓精科科技股份有限公司 激光热处理装置及激光热处理方法
CN110181165B (zh) * 2019-05-27 2021-03-26 北京华卓精科科技股份有限公司 激光预热退火系统和方法
WO2021020615A1 (ko) * 2019-07-30 2021-02-04 (주)에이치아이티오토모티브 열처리 장치
KR20210057265A (ko) 2019-11-11 2021-05-21 삼성전자주식회사 레이저 어닐링 장치 및 그를 이용한 반도체 소자의 제조 방법
CN110918770B (zh) * 2019-12-16 2021-01-15 山东大学 一种多点激光冲击成形装置及成形方法
CN112769025A (zh) * 2020-12-30 2021-05-07 中国科学院微电子研究所 光学整形装置及方法
CN113345806B (zh) * 2021-04-23 2024-03-05 北京华卓精科科技股份有限公司 一种SiC基半导体的激光退火方法
CN113305389A (zh) * 2021-06-08 2021-08-27 武汉虹信科技发展有限责任公司 一种激光焊接装置及激光焊接方法
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CN116230509A (zh) * 2022-09-08 2023-06-06 北京华卓精科科技股份有限公司 一种激光退火方法及系统
CN115424961B (zh) * 2022-09-29 2025-09-02 上海集成电路研发中心有限公司 激光退火设备及激光退火控制方法
CN115602751A (zh) * 2022-10-25 2023-01-13 江苏华兴激光科技有限公司（Cn） 一种用于红外雪崩探测芯片的激光退火装置及其检测方法
CN116275509B (zh) * 2023-05-15 2023-09-08 苏州亚太精睿传动科技股份有限公司 一种激光焊接方法
CN117139827A (zh) * 2023-06-06 2023-12-01 珠海吉光科技有限公司 多波长振镜、激光加工用光学系统及激光加工方法
CN116790851B (zh) * 2023-06-20 2026-02-03 京东方科技集团股份有限公司 退火装置、其检测方法、退火设备、以及退火工艺方法

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Publication number Publication date
US20190015929A1 (en) 2019-01-17
KR102080613B1 (ko) 2020-02-24
EP3399543A4 (en) 2018-12-12
EP3399543A1 (en) 2018-11-07
JP2019507493A (ja) 2019-03-14
TW201729295A (zh) 2017-08-16
WO2017114424A1 (zh) 2017-07-06
KR20180098383A (ko) 2018-09-03
JP6831383B2 (ja) 2021-02-17
CN106935491A (zh) 2017-07-07
EP3399543B1 (en) 2021-12-22

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