CN106788368B - 用于p沟道mosfet的驱动器 - Google Patents
用于p沟道mosfet的驱动器 Download PDFInfo
- Publication number
- CN106788368B CN106788368B CN201610987290.2A CN201610987290A CN106788368B CN 106788368 B CN106788368 B CN 106788368B CN 201610987290 A CN201610987290 A CN 201610987290A CN 106788368 B CN106788368 B CN 106788368B
- Authority
- CN
- China
- Prior art keywords
- bipolar transistor
- driver circuit
- channel mosfet
- turn
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000003990 capacitor Substances 0.000 claims abstract description 35
- 230000008878 coupling Effects 0.000 claims description 29
- 238000010168 coupling process Methods 0.000 claims description 29
- 238000005859 coupling reaction Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 5
- 238000006073 displacement reaction Methods 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 238000007599 discharging Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0072—Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load
Landscapes
- Electronic Switches (AREA)
Abstract
Description
1,11,21,31 | 驱动器电路 |
2 | P沟道MOSFET |
3 | 功率输入 |
4 | 控制输入 |
5 | 驱动输出 |
6 | 功率供应 |
7,17 | 放大器 |
18 | 电容器 |
19 | 电阻器 |
20 | 双极晶体管 |
V1 | DC功率源 |
R1,R2,R3,R4,R5 | 电阻器 |
C1,C2,18 | 电容器 |
D1,D2 | 二极管 |
V2 | 电压源 |
Q4 | P沟道MOSFET |
Q1,Q2,Q3 | 双极晶体管 |
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP15186921.1A EP3148077B1 (en) | 2015-09-25 | 2015-09-25 | Driver for a p-channel mosfet |
EP15186921.1 | 2015-09-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106788368A CN106788368A (zh) | 2017-05-31 |
CN106788368B true CN106788368B (zh) | 2022-02-01 |
Family
ID=54199122
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610987290.2A Active CN106788368B (zh) | 2015-09-25 | 2016-09-23 | 用于p沟道mosfet的驱动器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10177758B2 (zh) |
EP (1) | EP3148077B1 (zh) |
CN (1) | CN106788368B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3148077B1 (en) * | 2015-09-25 | 2019-07-17 | Delta Electronics (Thailand) Public Co., Ltd. | Driver for a p-channel mosfet |
US10715135B2 (en) * | 2017-06-16 | 2020-07-14 | Software Motor Company | Advanced gate drivers for silicon carbide bipolar junction transistors |
US11952324B2 (en) | 2017-08-04 | 2024-04-09 | Schlumberger Technology Corporation | Amidoamine synthesis, methods to track the reaction process |
US11127069B2 (en) | 2018-08-07 | 2021-09-21 | Adrich, Inc. | Resistive-sensor based inventory management device |
US11138555B2 (en) * | 2018-08-07 | 2021-10-05 | Adrich, Inc. | Remotely programming an inventory management device to measure usage of material |
KR102382253B1 (ko) * | 2018-10-30 | 2022-04-01 | 주식회사 엘지에너지솔루션 | 메인 스위치를 위한 드라이버 회로 및 그것을 포함하는 제어 장치 |
DE102022211425A1 (de) * | 2022-10-27 | 2024-05-02 | Inventronics Gmbh | Schaltungsanordnung zum Ansteuern einer Last |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4410809A (en) * | 1980-06-27 | 1983-10-18 | Kabushiki Kaisha Morita Seisakusho | Static induction transistor gate driving circuit |
US5550412A (en) * | 1994-09-12 | 1996-08-27 | United Technologies Corporation | Isolated MOSFET gate drive |
CN101355352A (zh) * | 2007-07-26 | 2009-01-28 | 上海空间电源研究所 | P型功率mos开关管驱动电路 |
CN201210669Y (zh) * | 2008-06-06 | 2009-03-18 | 深圳创维-Rgb电子有限公司 | 一种mos管驱动电路 |
CN101447729A (zh) * | 2008-12-24 | 2009-06-03 | 北京新雷能有限责任公司 | Buck调整器中p沟道mosfet的驱动电路 |
CN101895281A (zh) * | 2010-07-28 | 2010-11-24 | 佛山市顺德区瑞德电子实业有限公司 | 一种开关电源的新型mos管驱动电路 |
CN101959351A (zh) * | 2010-10-15 | 2011-01-26 | 上海小糸车灯有限公司 | 一种p-mos管驱动电路及其驱动方法 |
CN104143972A (zh) * | 2014-08-01 | 2014-11-12 | 矽力杰半导体技术(杭州)有限公司 | 晶体管驱动电路以及驱动方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5868728A (ja) * | 1981-10-21 | 1983-04-23 | Olympus Optical Co Ltd | オ−トストロボの露光オ−バによる表示装置 |
US4500801A (en) * | 1982-06-21 | 1985-02-19 | Eaton Corporation | Self-powered nonregenerative fast gate turn-off FET |
JPH0616585B2 (ja) * | 1983-12-16 | 1994-03-02 | 株式会社日立製作所 | バツフア回路 |
US5402386A (en) * | 1992-10-14 | 1995-03-28 | Sun Microsystems, Inc. | Word line decoder/driver circuit and method |
US7129678B2 (en) * | 2002-01-25 | 2006-10-31 | Victory Industrial Corporation | High voltage generator using inductor-based charge pump for automotive alternator voltage regulator |
US7400662B2 (en) * | 2005-01-26 | 2008-07-15 | Avago Technologies Fiber Ip Pte Ltd | Calibration of laser systems |
US20080061837A1 (en) * | 2006-08-25 | 2008-03-13 | Parade Technologies, Ltd. | Low Supply Voltage, Large Output Swing, Source-Terminated Output Driver for High Speed AC-coupled Double-Termination Serial Links |
US7639094B1 (en) * | 2007-05-09 | 2009-12-29 | Marvell International Ltd. | Shared pin resonator oscillators |
US8149955B2 (en) * | 2008-06-30 | 2012-04-03 | Telefonaktiebolaget L M Ericsson (Publ) | Single ended multiband feedback linearized RF amplifier and mixer with DC-offset and IM2 suppression feedback loop |
FI20095187A (fi) * | 2009-02-26 | 2010-08-27 | Valtion Teknillinen | Menetelmä ja laitteisto etanolin tunnistusta varten |
US9007098B1 (en) * | 2013-03-01 | 2015-04-14 | Iml International | Current mode DVR or PVCOM with integrated resistors |
US8923492B2 (en) * | 2013-03-05 | 2014-12-30 | Broadcom Corporation | Integrated CMOS multi-mode drivers |
EP3148077B1 (en) * | 2015-09-25 | 2019-07-17 | Delta Electronics (Thailand) Public Co., Ltd. | Driver for a p-channel mosfet |
-
2015
- 2015-09-25 EP EP15186921.1A patent/EP3148077B1/en active Active
-
2016
- 2016-09-15 US US15/266,534 patent/US10177758B2/en active Active
- 2016-09-23 CN CN201610987290.2A patent/CN106788368B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4410809A (en) * | 1980-06-27 | 1983-10-18 | Kabushiki Kaisha Morita Seisakusho | Static induction transistor gate driving circuit |
US5550412A (en) * | 1994-09-12 | 1996-08-27 | United Technologies Corporation | Isolated MOSFET gate drive |
CN101355352A (zh) * | 2007-07-26 | 2009-01-28 | 上海空间电源研究所 | P型功率mos开关管驱动电路 |
CN201210669Y (zh) * | 2008-06-06 | 2009-03-18 | 深圳创维-Rgb电子有限公司 | 一种mos管驱动电路 |
CN101447729A (zh) * | 2008-12-24 | 2009-06-03 | 北京新雷能有限责任公司 | Buck调整器中p沟道mosfet的驱动电路 |
CN101895281A (zh) * | 2010-07-28 | 2010-11-24 | 佛山市顺德区瑞德电子实业有限公司 | 一种开关电源的新型mos管驱动电路 |
CN101959351A (zh) * | 2010-10-15 | 2011-01-26 | 上海小糸车灯有限公司 | 一种p-mos管驱动电路及其驱动方法 |
CN104143972A (zh) * | 2014-08-01 | 2014-11-12 | 矽力杰半导体技术(杭州)有限公司 | 晶体管驱动电路以及驱动方法 |
Also Published As
Publication number | Publication date |
---|---|
US20170093393A1 (en) | 2017-03-30 |
EP3148077A1 (en) | 2017-03-29 |
US10177758B2 (en) | 2019-01-08 |
EP3148077B1 (en) | 2019-07-17 |
CN106788368A (zh) | 2017-05-31 |
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