CN106716661A - 磁阻元件和磁存储器 - Google Patents
磁阻元件和磁存储器 Download PDFInfo
- Publication number
- CN106716661A CN106716661A CN201580045837.0A CN201580045837A CN106716661A CN 106716661 A CN106716661 A CN 106716661A CN 201580045837 A CN201580045837 A CN 201580045837A CN 106716661 A CN106716661 A CN 106716661A
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- CN
- China
- Prior art keywords
- magnetosphere
- layer
- magnetization
- magnetoresistive element
- nonmagnetic layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 73
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 15
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical group [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 claims abstract description 10
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 8
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 7
- 230000005415 magnetization Effects 0.000 claims description 68
- 229910045601 alloy Inorganic materials 0.000 claims description 17
- 239000000956 alloy Substances 0.000 claims description 17
- 229920006395 saturated elastomer Polymers 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 14
- 229910052742 iron Inorganic materials 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 9
- 229910052763 palladium Inorganic materials 0.000 claims description 8
- 229910052703 rhodium Inorganic materials 0.000 claims description 8
- 238000010276 construction Methods 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 5
- 229910052741 iridium Inorganic materials 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 229910052762 osmium Inorganic materials 0.000 claims description 4
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- 229910052771 Terbium Inorganic materials 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 238000009825 accumulation Methods 0.000 description 30
- 230000005389 magnetism Effects 0.000 description 29
- 239000000463 material Substances 0.000 description 22
- 239000000758 substrate Substances 0.000 description 22
- 239000013078 crystal Substances 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 230000005294 ferromagnetic effect Effects 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 229910003321 CoFe Inorganic materials 0.000 description 8
- 230000008859 change Effects 0.000 description 8
- 239000011572 manganese Substances 0.000 description 8
- 230000010287 polarization Effects 0.000 description 8
- 229910000943 NiAl Inorganic materials 0.000 description 6
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 229910002515 CoAl Inorganic materials 0.000 description 3
- 239000003245 coal Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 230000005374 Kerr effect Effects 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000013016 damping Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000010415 tropism Effects 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910018936 CoPd Inorganic materials 0.000 description 1
- 229910018979 CoPt Inorganic materials 0.000 description 1
- 229910000684 Cobalt-chrome Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- 229910003266 NiCo Inorganic materials 0.000 description 1
- 229910003289 NiMn Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 230000005303 antiferromagnetism Effects 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000010952 cobalt-chrome Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005713 exacerbation Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/16—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
- H01F10/30—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the intermediate layers, e.g. seed, buffer, template, diffusion preventing, cap layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014-234949 | 2014-11-19 | ||
JP2014234949A JP6411186B2 (ja) | 2014-11-19 | 2014-11-19 | 磁気抵抗素子および磁気メモリ |
PCT/JP2015/082198 WO2016080373A1 (ja) | 2014-11-19 | 2015-11-17 | 磁気抵抗素子および磁気メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106716661A true CN106716661A (zh) | 2017-05-24 |
CN106716661B CN106716661B (zh) | 2019-07-09 |
Family
ID=56013909
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201580045837.0A Active CN106716661B (zh) | 2014-11-19 | 2015-11-17 | 磁阻元件和磁存储器 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10256394B2 (zh) |
JP (1) | JP6411186B2 (zh) |
CN (1) | CN106716661B (zh) |
WO (1) | WO2016080373A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110289033A (zh) * | 2018-03-19 | 2019-09-27 | 东芝存储器株式会社 | 磁存储装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2018100837A1 (ja) * | 2016-12-02 | 2019-10-17 | Tdk株式会社 | 磁化反転素子、磁気抵抗効果素子、集積素子及び集積素子の製造方法 |
JP7127770B2 (ja) * | 2017-04-28 | 2022-08-30 | 国立研究開発法人物質・材料研究機構 | 面直磁化強磁性半導体ヘテロ接合素子、およびこれを用いた磁気記憶装置並びにスピンロジック素子 |
US11107976B2 (en) * | 2017-06-14 | 2021-08-31 | National Institute For Materials Science | Magnetic tunnel junction, spintronics device using same, and method for manufacturing magnetic tunnel junction |
US10553642B2 (en) * | 2017-08-28 | 2020-02-04 | Samsung Electronics Co., Ltd. | Method and system for providing magnetic junctions utilizing metal oxide layer(s) |
JP7150317B2 (ja) * | 2018-09-07 | 2022-10-11 | 国立研究開発法人産業技術総合研究所 | 電子素子及びその製造方法並びに磁気抵抗素子 |
CN113450851B (zh) * | 2021-03-08 | 2022-08-12 | 北京航空航天大学 | 多比特存储单元、模数转换器、设备及方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5693426A (en) * | 1994-09-29 | 1997-12-02 | Carnegie Mellon University | Magnetic recording medium with B2 structured underlayer and a cobalt-based magnetic layer |
CN1442847A (zh) * | 2002-03-06 | 2003-09-17 | 富士通株式会社 | 磁记录介质和磁存储装置 |
US6706426B1 (en) * | 1999-03-18 | 2004-03-16 | Hitachi, Ltd. | Longitudinal magnetic recording media |
US20060280972A1 (en) * | 2005-06-08 | 2006-12-14 | Fujitsu Limited | Magnetic recording medium and magnetic storage |
CN101399312A (zh) * | 2007-09-26 | 2009-04-01 | 株式会社东芝 | 磁阻元件以及磁性存储器 |
US20120241881A1 (en) * | 2011-03-25 | 2012-09-27 | Tohoku University | Magnetoresistive element and magnetic memory |
JP2012221528A (ja) * | 2011-04-08 | 2012-11-12 | Showa Denko Kk | 熱アシスト磁気記録媒体及び磁気記憶装置 |
CN103247303A (zh) * | 2012-02-14 | 2013-08-14 | 昭和电工株式会社 | 磁记录介质和磁记录再生装置 |
US8520433B1 (en) * | 2012-03-21 | 2013-08-27 | Kabushiki Kaisha Toshiba | Magnetoresistive element and magnetic memory |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5491757B2 (ja) | 2009-03-27 | 2014-05-14 | 株式会社東芝 | 磁気抵抗素子および磁気メモリ |
JP5374589B2 (ja) * | 2009-09-04 | 2013-12-25 | 株式会社日立製作所 | 磁気メモリ |
JP5597899B2 (ja) | 2012-09-21 | 2014-10-01 | 株式会社東芝 | 磁気抵抗素子および磁気メモリ |
-
2014
- 2014-11-19 JP JP2014234949A patent/JP6411186B2/ja active Active
-
2015
- 2015-11-17 WO PCT/JP2015/082198 patent/WO2016080373A1/ja active Application Filing
- 2015-11-17 CN CN201580045837.0A patent/CN106716661B/zh active Active
-
2017
- 2017-02-28 US US15/444,811 patent/US10256394B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5693426A (en) * | 1994-09-29 | 1997-12-02 | Carnegie Mellon University | Magnetic recording medium with B2 structured underlayer and a cobalt-based magnetic layer |
US6706426B1 (en) * | 1999-03-18 | 2004-03-16 | Hitachi, Ltd. | Longitudinal magnetic recording media |
CN1442847A (zh) * | 2002-03-06 | 2003-09-17 | 富士通株式会社 | 磁记录介质和磁存储装置 |
US20060280972A1 (en) * | 2005-06-08 | 2006-12-14 | Fujitsu Limited | Magnetic recording medium and magnetic storage |
CN101399312A (zh) * | 2007-09-26 | 2009-04-01 | 株式会社东芝 | 磁阻元件以及磁性存储器 |
US20120241881A1 (en) * | 2011-03-25 | 2012-09-27 | Tohoku University | Magnetoresistive element and magnetic memory |
JP2012221528A (ja) * | 2011-04-08 | 2012-11-12 | Showa Denko Kk | 熱アシスト磁気記録媒体及び磁気記憶装置 |
CN103247303A (zh) * | 2012-02-14 | 2013-08-14 | 昭和电工株式会社 | 磁记录介质和磁记录再生装置 |
US8520433B1 (en) * | 2012-03-21 | 2013-08-27 | Kabushiki Kaisha Toshiba | Magnetoresistive element and magnetic memory |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110289033A (zh) * | 2018-03-19 | 2019-09-27 | 东芝存储器株式会社 | 磁存储装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2016100415A (ja) | 2016-05-30 |
CN106716661B (zh) | 2019-07-09 |
JP6411186B2 (ja) | 2018-10-24 |
US10256394B2 (en) | 2019-04-09 |
US20170179374A1 (en) | 2017-06-22 |
WO2016080373A1 (ja) | 2016-05-26 |
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Address after: Tokyo, Japan Patentee after: Kaixia Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Japanese businessman Panjaya Co.,Ltd. |
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Effective date of registration: 20200318 Address after: Tokyo, Japan Patentee after: Japanese businessman Panjaya Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. Effective date of registration: 20200318 Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Toshiba Corp. |
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