CN106684074A - Novel pressure welding type power module - Google Patents
Novel pressure welding type power module Download PDFInfo
- Publication number
- CN106684074A CN106684074A CN201710046740.2A CN201710046740A CN106684074A CN 106684074 A CN106684074 A CN 106684074A CN 201710046740 A CN201710046740 A CN 201710046740A CN 106684074 A CN106684074 A CN 106684074A
- Authority
- CN
- China
- Prior art keywords
- signal
- power terminal
- terminal
- thyristor chip
- signal lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005493 welding type Methods 0.000 title abstract 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000010949 copper Substances 0.000 claims abstract description 38
- 229910052802 copper Inorganic materials 0.000 claims abstract description 35
- 239000004033 plastic Substances 0.000 claims abstract description 20
- 229920003023 plastic Polymers 0.000 claims abstract description 20
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000000565 sealant Substances 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000919 ceramic Substances 0.000 claims abstract description 7
- 238000002788 crimping Methods 0.000 claims description 16
- 239000012530 fluid Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 6
- 239000000499 gel Substances 0.000 claims description 5
- 229920001296 polysiloxane Polymers 0.000 claims description 5
- 239000000017 hydrogel Substances 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000004677 Nylon Substances 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000003754 machining Methods 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229920001778 nylon Polymers 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 238000003860 storage Methods 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract 4
- 239000000741 silica gel Substances 0.000 abstract 2
- 229910002027 silica gel Inorganic materials 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
Abstract
The invention discloses a novel pressure welding type power module. The novel pressure welding type power module mainly comprises a circular thyristor chip, an insulating ceramic wafer, a heat dissipating copper substrate, a power terminal, a pressing block, a signal lead frame, a signal lead, a plastic housing, a silica gel, a molybdenum sheet and a sealant, wherein the plastic housing and the heat dissipating copper substrate are adhered together through the sealant; the power terminal, the molybdenum sheet, the circular thyristor chip and the ceramic wafer are arranged on the upper surface of the heat dissipating copper substrate and are positioned by using a rubber ring; a high power terminal is arranged on the upper surface of the circular thyristor chip and is slightly fixed and pressed; the signal lead for a gate pole and an E pole of the circular thyristor chip are clamped at the corresponding position of the signal lead frame, and is horizontally arranged on the surface of the high power terminal; the signal lead is used for leading the gate pole and the E pole of the circular thyristor chip out to a signal support and a signal terminal; the pressing block is arranged on the surface of the signal lead frame and is screwed down with screws; and the upper surface of the heat dissipating copper substrate inside the plastic housing is covered with the insulating silica gel.
Description
Technical field
The present invention relates to a kind of new crimp type power model, belong to the power module package skill of field of power electronics
Art.
Background technology
Used as a kind of power component, power model is applied to various high power switching power supplies, high-frequency induction heating power
Etc. equipment, conventionally, as the packaged type of power model is not perfect enough, reasonable, thus there are some such as products
Integration, safety and reliability it is not good enough, structure is not reasonable, and production cost is high, installs and safeguards inconvenient.
The content of the invention
It is an object of the invention to overcome the shortcomings of that prior art is present, and one kind is provided and is packaged into one by crimping mode
The technique of body, improves product integration, safety and reliability, optimizes product structure, and simplifies production technology, and reduction is produced into
This, is easy to the new crimp type power model safeguarded and install.
The purpose of the present invention is completed by following technical solution, a kind of new crimp type power model, main bag
Circular thyristor chip, insulating ceramic film, radiating copper base, power terminal, briquetting, signal is included to draw outside frame, signal lead, plastics
Shell, Silica hydrogel, molybdenum sheet, fluid sealant, described plastic casing are bonded together with radiating copper base by fluid sealant, described work(
Rate terminal, molybdenum sheet, circular thyristor chip and potsherd are placed in the upper surface blend rubber delineation position of radiating copper base, described
Circular thyristor chip upper surface be equipped with high-power terminal and slightly fixed and compress, the gate pole of the circular thyristor chip
Signal being stuck in the signal lead of E poles and drawing frame relevant position, and be horizontally placed at the surface of high-power terminal, signal lead is by circle
The gate pole of thyristor chip and E poles lead to signal support and signal terminal, and briquetting is placed in into signal draws frame surface, are twisted with screw
Tightly, the radiating copper thereon in described plastic casing is coated with insulating silicone gel.
As preferred：The upper and lower surface of described circular thyristor chip passes through with power terminal and high-power terminal respectively
Molybdenum sheet links together through crimping mode, and constitutes semi-bridge type loop of power circuit；Potsherd is used between power terminal and copper base
Installed by way of crimping, form insulating barrier and heat dissipating layer, chip surface draws frame and signal lead component by signal will be believed
Number lead to signal terminal.
As preferred：Described power terminal and high-power terminal are using the fine copper or Cu alloy material punching press of 3mm
Into, top layer naked copper or plating gold, tin, silver metal material, power terminal and high-power terminal are crimped with circle thyristor chip
Plane the flatness of 0.03mm is made up of machining mode.
As preferred：Plastic casing uses high temperature resistant, insulating properties good PBT, PPS or nylon plastic(s), and sets
There is storage glue groove, anti-terminal removal structure, anti-terminal misses assembling structure；Described signal lead draws frame and spring with circle by signal
The surface contact of thyristor chip 8, and holding wire is caused into signal support after being fixed by crimping mode；Described signal draws frame
High-strength structure is made using PPS materials, middle setting has the perforate of fixed signal lead；Described compact materials steel is through warm
Certain hardness is obtained after treatment, there is the radian for fixing pretension effect on surface.
The present invention uses one group of thyristor chip, and integral technique is encapsulated by crimping mode, improve product integration,
Safety and reliability, optimizes product structure, and simplifies production technology, reduces production cost, substantially increases the market competitiveness.By
All completed in inside modules in the connection of circuit, therefore, the wire length between component is shortened, it is capable of achieving optimization wiring
With the design of symmetrical structure, substantially reduce the stray inductance and capacitance parameter of device circuit.Additionally, also having structure tight
Gather, simple production process, low production cost, external connection is simple, be easy to the advantages of safeguarding and install, thus substantially reduces device
Have high insulation pressure-resistant between weight and cost, and the power terminal and radiating copper coin of module, make it many with device
Plant module to be commonly mounted on a radiator, be conducive to the further diminution of device volume, simplify the structure design of device.
Brief description of the drawings
Fig. 1 is decomposition texture schematic diagram of the invention.
Fig. 2 is dimensional structure diagram of the invention.
Specific embodiment
Below in conjunction with accompanying drawing, the present invention will be described in detail：Fig. 1, shown in 2, a kind of new crimping of the present invention
Type power model, it is main include circular thyristor chip 8, insulating ceramic film 10, radiating copper base 11, power terminal 2, briquetting 3,
Signal draws frame 4, signal lead 5, plastic casing 12, Silica hydrogel, molybdenum sheet 9, fluid sealant, the plastic casing 12 described in its spy with radiating
Copper base 11 is bonded together by fluid sealant, described power terminal 2, molybdenum sheet 9, circular thyristor chip 8 and potsherd
The 10 upper surface blend rubber delineation positions for being placed in radiating copper base 11, the described upper surface of circular thyristor chip 8 is equipped with big work(
Rate terminal 7 is simultaneously slightly fixed and compressed, and the gate pole of the circular thyristor chip 8 and the signal lead 5 of E poles are stuck in signal and draw frame
Relevant position, and the surface of high-power terminal 7 is horizontally placed at, signal lead 5 draws the gate pole of circular thyristor chip 8 and E poles
Go out to signal support and signal terminal, briquetting 3 is placed in into signal draws frame surface, screws down, in described plastic casing 12
Radiating copper base 11 above be coated with insulating silicone gel.
First by shell 12 with radiating copper base 11 be bonded together by fluid sealant, sealing firmly after by potsherd 10,
Power terminal 2, molybdenum sheet 9, circular chip 8 are placed horizontally at the upper surface of copper base 11, keep smooth, are positioned with rubber ring, it is ensured that
Contact good between each part, then high-power terminal 7 is placed in the surface of circular thyristor chip 8, slight fixed and compression will
The signal lead 5 of gate pole and E poles is stuck in signal and draws frame relevant position, is horizontally placed at the surface of high-power terminal 7, and signal lead is by core
The gate pole of piece and E poles lead to signal support and signal terminal, briquetting is finally steadily placed in signal and draws frame surface, keep water
It is flat, tightened by rule with 4 screws with certain moment of torsion, whole crimping process is completed, finally by covering insulating silicone gel
The stress levels and the class of insulation between each original paper are improved, the reliability of whole module is greatly improved.
Shown in figure, the upper and lower surface of described circular thyristor chip 8 respectively with power terminal 2 and high-power terminal 7
Linked together through crimping mode by molybdenum sheet 9, and constitute semi-bridge type loop of power circuit；Using pottery between power terminal and copper base
Ceramics is installed by way of crimping, forms insulating barrier and heat dissipating layer, and chip surface draws frame and signal lead component by signal
Signal is led into signal terminal.
Described power terminal 2 and high-power terminal 7 is stamped to form using the fine copper or Cu alloy material of 3mm, top layer
Naked copper or plating gold, tin, silver metal material, power terminal 2 and high-power terminal 7 are flat with what circular thyristor chip 8 was crimped
Face is made up the flatness of 0.03mm of machining mode.
Plastic casing uses high temperature resistant, insulating properties good PBT, PPS or nylon plastic(s), and is provided with storage glue groove,
Anti- terminal removal structure, anti-terminal misses assembling structure；
Described signal lead draws frame and spring and is contacted with the surface of circular thyristor chip 8 by signal, and by crimping side
Holding wire is caused signal support by formula after fixing；Described signal draws frame and is made high-strength structure, middle setting using PPS materials
There is the perforate of fixed signal lead；Described compact materials steel after heat treatment obtains certain hardness, and surface has for solid
Determine the radian of pretension effect.
Embodiment：The invention mainly comprises circular thyristor chip 8, insulating ceramic film 10, radiating copper base 11, power end
Son 2, briquetting 3, signal draws the parts such as frame 4, signal lead 5, plastic casing 12, Silica hydrogel, molybdenum sheet 9, fluid sealant.First by shell
12 are bonded together with radiating copper base 11 by fluid sealant, by potsherd 10, power terminal 2, molybdenum sheet 9, circle after sealing firmly
Shape chip 8 is placed horizontally at the upper surface of copper base 11, keeps smooth, is positioned with rubber ring, it is ensured that contact good between each part,
High-power terminal 7 is placed in the surface of circular thyristor chip 8 again, slight fixed and compression, by gate pole and the signal lead of E poles
5 are stuck in signal draws frame relevant position, is horizontally placed at the surface of high-power terminal 7, and signal lead leads to the gate pole of chip and E poles
Signal support and signal terminal, briquetting are finally steadily placed in signal and draw frame surface, level are kept, with certain moment of torsion with 4
Screw is tightened by rule, completes whole crimping process, pressure-resistant between each original paper to improve finally by covering insulating silicone gel
Grade and the class of insulation, greatly improve the reliability of whole module.
Radiating copper base 11 provides connection support and passage of heat for two chip assemblies, and as the structure of whole module
Basis.Therefore, it must have high-termal conductivity.Because its thickness will reach 11mm, and whole module production process without through
Elevated process is crossed, therefore pre-bending need not be carried out to radiating copper base 11, simplify technological process, can guarantee that it can be filled in module again
Sufficiently contacted with radiator when on to radiator, so as to reduce the thermal contact resistance of module, it is ensured that the cooling requirements of module.Radiating
Copper base is used installs well format symmetrical structure, altogether 4 mounting holes, it is ensured that module installation reliability, improves making for module
With convenience and popularity.
All of electrical connection is linked together by way of crimping, the upper and lower surface of circular thyristor chip 8
Linked together by molybdenum sheet respectively at power terminal 2 and high-power terminal 7, form a loop, electrical connection circuit is extreme,
Heat conductivility is very superior, effectively heat wave when working can be spread out by the copper base 11 that radiates, this interconnector
Few crimping mode, can greatly improve whole module symmetry and reliability.
Power terminal 2 and the thickness of high-power terminal 7 are stamped to form using 3mm thickness fine copper, and 3 ~ 5 μm of electroplate drops significantly
Low dead resistance, the surface crimped with chip need to do mechanical process, and flatness reaches 0.03mm.
Plastic casing 12 is using resistance to compression, tension and dielectric strength is high and hot temperature is high, and added with 30% glass fibers
The PBT engineering plastics of dimension are molded, and it can well solve and radiate between copper coin 11, power terminal 2, high-power terminal 7
The matching problem expanded with heat and contract with cold, bonded by fluid sealant, realize being connected with the structure of radiating copper coin 11, higher prevented with reaching
Shield intensity and gas-tight sealing, and for power terminal 2, the extraction of high-power terminal 7 provide support.Enclosure uses error-proof structure,
Prevent module loading error, it is ensured that uniformity and correctness that module is installed, increased anti-terminal removal structure, can be effective
Power terminal is prevented because being caused terminal removal by external force, it is ensured that the reliability of module.
Claims (4)
1. a kind of new crimp type power model, main to include circular thyristor chip 8, insulating ceramic film 10, radiating copper base
11st, power terminal 2, briquetting 3, signal draw frame 4, signal lead 5, plastic casing 12, Silica hydrogel, molybdenum sheet 9, fluid sealant, its feature
Be that described plastic casing 12 is bonded together with the copper base 11 that radiates by fluid sealant, described power terminal 2, molybdenum sheet 9,
Circular thyristor chip 8 and potsherd 10 are placed in the upper surface blend rubber delineation position of radiating copper base 11, described circle
The upper surface of thyristor chip 8 is equipped with high-power terminal 7 and slightly fixes and compress, the gate pole and E of the circular thyristor chip 8
The signal lead 5 of pole is stuck in signal and draws frame relevant position, and is horizontally placed at the surface of high-power terminal 7, and signal lead 5 is by circle
The gate pole of thyristor chip 8 and E poles lead to signal support and signal terminal, and briquetting 3 is placed in into signal draws frame surface, uses screw
Tighten, the radiating copper base 11 in described plastic casing 12 is coated with insulating silicone gel above.
2. new crimp type power model according to claim 1, it is characterised in that described circular thyristor chip 8
Upper and lower surface is linked together by molybdenum sheet 9 with power terminal 2 and high-power terminal 7 through crimping mode respectively, and constitutes half-bridge
Type loop of power circuit；Installed by the way of potsherd is by crimping between power terminal and copper base, form insulating barrier and radiating
Layer, chip surface draws frame by signal and signal is led to signal terminal by signal lead component.
3. new crimp type power model according to claim 1 and 2, it is characterised in that described power terminal 2 and big
Power terminal 7 is stamped to form using the fine copper or Cu alloy material of 3mm, top layer naked copper or plating gold, tin, silver metal material
The plane that material, power terminal 2 and high-power terminal 7 are crimped with circular thyristor chip 8 is made 0.03mm by machining mode
Flatness.
4. new crimp type power model according to claim 1, it is characterised in that plastic casing uses high temperature resistant, insulation
PBT, PPS of good performance or nylon plastic(s), and storage glue groove is provided with, anti-terminal removal structure, anti-terminal misses assembling structure；
Described signal lead draws frame and spring and is contacted with the surface of circular thyristor chip 8 by signal, and by crimping side
Holding wire is caused signal support by formula after fixing；Described signal draws frame and is made high-strength structure, middle setting using PPS materials
There is the perforate of fixed signal lead；Described compact materials steel after heat treatment obtains certain hardness, and surface has for solid
Determine the radian of pretension effect.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710046740.2A CN106684074B (en) | 2017-01-22 | 2017-01-22 | Novel crimping type power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710046740.2A CN106684074B (en) | 2017-01-22 | 2017-01-22 | Novel crimping type power module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106684074A true CN106684074A (en) | 2017-05-17 |
| CN106684074B CN106684074B (en) | 2023-08-01 |
Family
ID=58860599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710046740.2A Active CN106684074B (en) | 2017-01-22 | 2017-01-22 | Novel crimping type power module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106684074B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111128898A (en) * | 2019-12-13 | 2020-05-08 | 深圳基本半导体有限公司 | Crimping type SiC power module packaging structure |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202633265U (en) * | 2012-06-12 | 2012-12-26 | 湖北台基半导体股份有限公司 | High-dielectric voltage-withstanding power semiconductor module |
| JP2013004774A (en) * | 2011-06-17 | 2013-01-07 | Nippon Inter Electronics Corp | Crimp type high power thyristor module, method of manufacturing the same, and method of using the same |
| CN203659850U (en) * | 2013-07-15 | 2014-06-18 | 江苏晶中电子有限公司 | Crimp type insulating power semiconductor module |
| CN203746844U (en) * | 2014-01-25 | 2014-07-30 | 嘉兴斯达半导体股份有限公司 | Power module packaging structure |
| CN206672930U (en) * | 2017-01-22 | 2017-11-24 | 嘉兴斯达半导体股份有限公司 | New crimp type power model |
-
2017
- 2017-01-22 CN CN201710046740.2A patent/CN106684074B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013004774A (en) * | 2011-06-17 | 2013-01-07 | Nippon Inter Electronics Corp | Crimp type high power thyristor module, method of manufacturing the same, and method of using the same |
| CN202633265U (en) * | 2012-06-12 | 2012-12-26 | 湖北台基半导体股份有限公司 | High-dielectric voltage-withstanding power semiconductor module |
| CN203659850U (en) * | 2013-07-15 | 2014-06-18 | 江苏晶中电子有限公司 | Crimp type insulating power semiconductor module |
| CN203746844U (en) * | 2014-01-25 | 2014-07-30 | 嘉兴斯达半导体股份有限公司 | Power module packaging structure |
| CN206672930U (en) * | 2017-01-22 | 2017-11-24 | 嘉兴斯达半导体股份有限公司 | New crimp type power model |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111128898A (en) * | 2019-12-13 | 2020-05-08 | 深圳基本半导体有限公司 | Crimping type SiC power module packaging structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106684074B (en) | 2023-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101841975B (en) | Method for manufacturing high-thermal conductivity circuit board by hot-pressing method and high-thermal conductivity circuit board | |
| CN206672930U (en) | New crimp type power model | |
| CN107731696A (en) | A kind of power chip method for packing and structure | |
| CN201435569Y (en) | Solar energy photovoltaic terminal box | |
| CN104218031B (en) | Busbar articulated high-performance IGBT module and preparation method thereof | |
| CN106684074A (en) | Novel pressure welding type power module | |
| CN107818933A (en) | Encapsulation bonding wire heat block and its method being packaged | |
| CN212517166U (en) | Insulating discrete device structure | |
| CN103794698B (en) | Light emitting diode | |
| CN210745653U (en) | Metal substrate grounding structure of circuit board module | |
| CN209000902U (en) | A kind of encapsulating structure of frame clsss product enhancing heat dissipation | |
| CN106935520A (en) | A kind of interior insulation encapsulating structure and its manufacturing process | |
| CN106816445A (en) | A kind of IGBT module | |
| CN208706626U (en) | A kind of semiconductor crystal wafer encapsulating structure | |
| CN209571388U (en) | A kind of sieve mould machine assembling DBC semiconductor substrate | |
| CN104701277B (en) | The encapsulating structure of power model | |
| CN113241339A (en) | High-power silicon carbide diode and manufacturing method thereof | |
| CN206412336U (en) | Semiconductor package part | |
| CN201122597Y (en) | Light emitting diode chip packaging structure with thick guiding pin | |
| CN103325757A (en) | Packaging piece based on substrate and adopting slotting technology and manufacturing process of packaging piece | |
| CN211350619U (en) | Double-sided heat dissipation power module | |
| CN203596351U (en) | LED-COB (chip on board) light source | |
| CN202332951U (en) | Power type light emitting diode (LED) | |
| CN103647006B (en) | A kind of LED-COB light source and preparation method thereof | |
| CN216624253U (en) | LQFP (low-profile quad flat package) packaging chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: No. 988 Kexing Road, Hunan District, Jiaxing City, Zhejiang Province, 314006 Patentee after: Star Semiconductor Co.,Ltd. Address before: No. 988 Kexing Road, Hunan District, Jiaxing City, Zhejiang Province, 314006 Patentee before: STARPOWER SEMICONDUCTOR Ltd. |