CN103325757A - Packaging piece based on substrate and adopting slotting technology and manufacturing process of packaging piece - Google Patents
Packaging piece based on substrate and adopting slotting technology and manufacturing process of packaging piece Download PDFInfo
- Publication number
- CN103325757A CN103325757A CN2013101816807A CN201310181680A CN103325757A CN 103325757 A CN103325757 A CN 103325757A CN 2013101816807 A CN2013101816807 A CN 2013101816807A CN 201310181680 A CN201310181680 A CN 201310181680A CN 103325757 A CN103325757 A CN 103325757A
- Authority
- CN
- China
- Prior art keywords
- chip
- lead frame
- substrate
- pad
- packaging piece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention discloses a packaging piece based on a substrate and adopting a slotting technology and a manufacturing process of the packaging piece. The packaging piece is mainly composed of a lead frame, a PAD, a solder ball, conducting adhesive, a chip, a bonding wire and a plastic package body. The PAD and the solder ball are arranged on the lead frame, and a notch is formed in the lead frame. The chip is connected into the notch of the lead frame through the conducting adhesive, and welding spots on the chip are connected with the PAD on the lead frame through the bonding wire. The chip, the bonding wire, the solder ball and the lead frame form a power and signal channel of a circuit. The plastic package body wraps the lead frame, the PAD, the solder ball, the chip and the bonding wire. The procedures of the manufacturing process are wafer thinning, scribing, substrate slotting and ball replacing, chip installing, installed chip baking, bonding, plasma cleaning, post curing, plastic packaging and product finishing. According to the packaging piece based on the substrate and adopting the slotting technology and the manufacturing process of the packaging piece, electric heating performance of the chip is improved, and the performance of the whole packaging piece is improved greatly.
Description
Technical field
The invention belongs to the integrated antenna package technical field, specifically a kind of packaging part and manufacture craft thereof that adopts the fluting technology based on substrate.
Background technology
The full name of EPBGA is Enhanced Plastic Ball Grid Array(enhancement mode heat radiation BGA Package), it is a kind of reverse encapsulation method that integrated circuit adopts organic support plate+all-metal fin.It has following characteristics: 1. package area is much smaller than ceramic packaging; 2. the fin area is large, and heat dispersion is very good, is applicable to very lagre scale integrated circuit (VLSIC); 3. can the oneself during the molten weldering of pcb board placed in the middle, Yi Shangxi; 4. lightweight, reliability is high; 5. good electrical property, holistic cost is low.
The I/O terminal of BGA encapsulation is distributed in below the encapsulation by array format with circle or column solder joint, has increased although the advantage of BGA technology is the I/O number of pins, and pin-pitch does not reduce to have increased on the contrary, thereby has improved assembly yield; Improve its electric heating property; Thickness and weight all than before encapsulation technology reduce to some extent; Parasitic parameter reduces, and signal transmission delay is little, and frequency of utilization improves greatly; Assemble available coplanar welding, reliability is high.
Still there is the problem of poor radiation in EPBGA.
Summary of the invention
Defective for above-mentioned EPBGA conventional design, the invention provides a kind of packaging part and manufacture craft thereof that adopts the fluting technology based on substrate, the IC chip is slotted first in encapsulation process, and chip directly is attached on the copper coin by notch, its heat dispersion is fabulous, improves its electric heating property; Thickness and weight all than before encapsulation technology reduce to some extent; Parasitic parameter reduces, and signal transmission delay is little, and frequency of utilization improves greatly, and reliability is high.
A kind of packaging part based on substrate employing fluting technology mainly is comprised of lead frame, PAD, tin ball, conducting resinl, chip, bonding line and plastic-sealed body.PAD and tin ball are arranged on the described lead frame; and have a notch; lead frame is connected with chip by conducting resinl in notch; solder joint on the chip is connected by bonding line with PAD on the lead frame; chip, bonding line, tin ball, lead frame have consisted of power supply and the signalling channel of circuit; plastic-sealed body has surrounded lead frame, PAD, tin ball, chip and bonding line, and plastic-sealed body has played support and protective effect to chip and bonding line and tin ball.
Bonding line comprises gold thread, copper cash or alloy wire.
A kind of flow process of manufacture craft of the packaging part that adopts the fluting technology based on substrate is: wafer attenuate → scribing → substrate fluting is planted the curing → plastic packaging → finished product of ball → upper core → upper core baking → pressure welding → plasma cleaning → afterwards.
Description of drawings
Fig. 1 lead frame profile;
Fig. 2 lead frame is planted profile behind the ball;
Profile behind the core on Fig. 3 product;
Profile after the pressure welding of Fig. 4 product;
Profile behind Fig. 5 product plastic packaging;
Fig. 6 finished product profile.
Among the figure, 1 is lead frame, and 2 is PAD, and 3 is the tin ball, and 4 is conducting resinl, and 5 is chip, and 6 is bonding line, and 7 is plastic-sealed body.
Embodiment
The present invention is described further below in conjunction with accompanying drawing.
As shown in Figure 6, a kind of packaging part based on substrate employing fluting technology mainly is comprised of lead frame 1, PAD2, tin ball 3, conducting resinl 4, chip 5, bonding line 6 and plastic-sealed body 7.PAD2 and tin ball 3 are arranged on the described lead frame 1; and have a notch; lead frame 1 is connected with chip 5 by conducting resinl 4 in notch; solder joint on the chip 5 is connected by bonding line 6 with PAD2 on the lead frame 1; chip 5, bonding line 6, tin ball 3, lead frame 1 have consisted of power supply and the signalling channel of circuit; plastic-sealed body 7 has surrounded lead frame 1, PAD2, tin ball 3, chip 5 and bonding line 6, and 7 pairs of chips 5 of plastic-sealed body and bonding line 6 and tin ball 3 have played support and protective effect.
A kind of flow process of manufacture craft of the packaging part that adopts the fluting technology based on substrate is: wafer attenuate → scribing → substrate fluting is planted the curing → plastic packaging → finished product of ball → upper core → upper core baking → pressure welding → plasma cleaning → afterwards.
Such as Fig. 1 to shown in Figure 6, a kind of manufacture craft that adopts the packaging part of fluting technology based on substrate, it carries out according to following steps:
1, wafer attenuate: thickness thinning 50 μ m～200 μ m, roughness Ra 0.10mm～0.05mm;
2, scribing: the above wafer of 150 μ m is with common Q FN scribing process, but thickness uses double-pole scribing machine and technique thereof at the following wafer of 150 μ m;
3, the substrate fluting is planted ball: substrate can be according to chip 5 size paddle-tumbles, organic substrate thickness 0.6mm; Plant tin ball 3 at substrate behind the fluting, chip 5 directly is attached on the copper coin by notch, and its heat dispersion is fabulous; Substrate is lead frame 1; Can improve the electric heating property of product; Thickness and weight all than before encapsulation technology reduce to some extent; Parasitic parameter reduces, and signal transmission delay is little, and frequency of utilization improves greatly, and reliability is high;
4, upper core, upper core baking, pressure welding, plasma cleaning, rear curing are with conventional EPBGA technique;
5, plastic packaging, 7 pairs of chips 5 of plastic-sealed body and bonding line 6 and tin ball 3 have played support and protective effect, have consisted of power supply and the signalling channel of circuit.
EPBGA encapsulating products of the present invention is applicable on a large scale, the encapsulation of very lagre scale integrated circuit (VLSIC).The device great majority of EPBGA encapsulation are used for aviation, network and communications equipment, microcomputer, notebook computer and various types of flat panel display top-grade consumption market.Grasp its core technology, possess mass production capabilities, will greatly dwindle the gap of domestic IC industry and international most advanced level, this product has wide market prospects.Grasp its core technology, possess mass production capabilities, will greatly dwindle the gap of domestic IC industry and international most advanced level.
Claims (3)
1. a packaging part that adopts the fluting technology based on substrate is characterized in that: mainly by lead frame (1), PAD(2), tin ball (3), conducting resinl (4), chip (5), bonding line (6) and plastic-sealed body (7) form; Described lead frame has PAD(2 on (1)) and tin ball (3), and have a notch, lead frame (1) is connected with chip (5) by conducting resinl (4) in notch, PAD(2 on solder joint on the chip (5) and the lead frame (1)) is connected by bonding line (6), chip (5), bonding line (6), tin ball (3), lead frame (1) have consisted of power supply and the signalling channel of circuit, and plastic-sealed body (7) has surrounded lead frame (1), PAD(2), tin ball (3), chip (5) and bonding line (6).
2. a kind of packaging part that adopts the fluting technology based on substrate according to claim 1, it is characterized in that: bonding line (6) comprises gold thread, copper cash or alloy wire.
3. manufacture craft that adopts the packaging part of fluting technology based on substrate, it is characterized in that: it carries out according to following steps:
(1) wafer attenuate: thickness thinning 50 μ m～200 μ m, roughness Ra 0.10mm～0.05mm;
(2) scribing: the above wafer of 150 μ m is with common Q FN scribing process, but thickness uses double-pole scribing machine and technique thereof at the following wafer of 150 μ m;
(3) the substrate fluting is planted ball: substrate is planted tin ball (3) at substrate according to chip (3) size paddle-tumble behind the fluting, and chip (5) directly is attached on the copper coin by notch, and substrate is lead frame (1);
(4) upper core, upper core baking, pressure welding, plasma cleaning, rear curing are with conventional EPBGA technique;
(5) plastic packaging.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101816807A CN103325757A (en) | 2013-05-16 | 2013-05-16 | Packaging piece based on substrate and adopting slotting technology and manufacturing process of packaging piece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101816807A CN103325757A (en) | 2013-05-16 | 2013-05-16 | Packaging piece based on substrate and adopting slotting technology and manufacturing process of packaging piece |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103325757A true CN103325757A (en) | 2013-09-25 |
Family
ID=49194425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013101816807A Pending CN103325757A (en) | 2013-05-16 | 2013-05-16 | Packaging piece based on substrate and adopting slotting technology and manufacturing process of packaging piece |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103325757A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103943573A (en) * | 2013-12-31 | 2014-07-23 | 西安汐特电子科技有限公司 | Novel integrated circuit internal packaging method |
| WO2019014883A1 (en) * | 2017-07-20 | 2019-01-24 | 深圳市汇顶科技股份有限公司 | Chip package structure, chip module, and electronic terminal |
-
2013
- 2013-05-16 CN CN2013101816807A patent/CN103325757A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103943573A (en) * | 2013-12-31 | 2014-07-23 | 西安汐特电子科技有限公司 | Novel integrated circuit internal packaging method |
| CN103943573B (en) * | 2013-12-31 | 2016-10-05 | 西安汐特电子科技有限公司 | A kind of IC interior method for packing |
| WO2019014883A1 (en) * | 2017-07-20 | 2019-01-24 | 深圳市汇顶科技股份有限公司 | Chip package structure, chip module, and electronic terminal |
| US10854526B2 (en) | 2017-07-20 | 2020-12-01 | Shenzhen GOODIX Technology Co., Ltd. | Chip packaging structure, chip module and electronic terminal |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10283376B2 (en) | Chip encapsulating method and chip encapsulating structure | |
| CN103474406A (en) | Copper-free flat packaging piece of AAQFN frame product and manufacturing process thereof | |
| CN102339811A (en) | Circuit board with COB (Chip On Board) packaged power device | |
| CN103325757A (en) | Packaging piece based on substrate and adopting slotting technology and manufacturing process of packaging piece | |
| CN103094234A (en) | Extension pin Fan-out Panel Level ball grid array (BGA) package part and manufacture process thereof | |
| CN203589008U (en) | Packaging piece based on substrate and adopting slotting technique | |
| CN103325741A (en) | Packaging piece based on substrate and adopting liquid plastic packaging and manufacturing process of packaging piece | |
| CN202996814U (en) | Heat-dissipation type semiconductor packaging structure | |
| CN102931319B (en) | A kind of manufacture method of high thermally conductive LED base plate for packaging | |
| CN104465642A (en) | Fan-out type packaging structure based on multiple layers of chips of organic substrate and packaging method | |
| CN203588991U (en) | Packaging piece based on substrate and adopting liquid plastic packaging | |
| CN101673789A (en) | Light emitting diode package substrate structure, manufacturing method thereof and packaging structure thereof | |
| CN201000885Y (en) | Lead wire-free integrated circuit chip encapsulation | |
| CN103021883A (en) | Flat package part manufacturing process based on corrosion plastic package body | |
| CN103021882A (en) | Flat package part manufacture process based on grinding plastic package body | |
| CN103094128A (en) | Fan-out Panel Level ball grid array (BGA) package part manufacture process | |
| CN203260569U (en) | Pin extended fan-in diffusion panel type BGA package | |
| CN203521396U (en) | Copper-free flat packaging piece of AAQFN frame product | |
| WO2008138182A1 (en) | Chip type light-emitting diode | |
| CN203617268U (en) | AAQFN packaging member capable of enhancing heat dissipating function | |
| CN102376666B (en) | A kind of ball grid array package structure and manufacture method thereof | |
| CN104078371A (en) | Reballing method for inverted packaging of semiconductor integrated circuit or discrete device | |
| CN217822750U (en) | Packaging structure of IC chip | |
| CN204045558U (en) | Array of semiconductor devices formula reviewing packaging mechanism | |
| CN203481191U (en) | Frame-based AAQFN package adopting pre-plastic-package optimization technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130925 |
|
| WD01 | Invention patent application deemed withdrawn after publication |