CN106660065B - 粉粒体的涂布方法 - Google Patents

粉粒体的涂布方法 Download PDF

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Publication number
CN106660065B
CN106660065B CN201480080045.2A CN201480080045A CN106660065B CN 106660065 B CN106660065 B CN 106660065B CN 201480080045 A CN201480080045 A CN 201480080045A CN 106660065 B CN106660065 B CN 106660065B
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powder
coating
coated
granular material
granular
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CN106660065A (zh
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松永正文
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Mtek Smart Corp
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Mtek Smart Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
    • B05D1/12—Applying particulate materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only
    • C23C24/04—Impact or kinetic deposition of particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating Apparatus (AREA)
CN201480080045.2A 2014-10-18 2014-12-02 粉粒体的涂布方法 Active CN106660065B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010442591.3A CN111599979B (zh) 2014-10-18 2014-12-02 二次电池的电极形成方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014-213252 2014-10-18
JP2014213252A JP6481154B2 (ja) 2014-10-18 2014-10-18 粉粒体の塗布方法
PCT/JP2014/081877 WO2016059732A1 (ja) 2014-10-18 2014-12-02 粉粒体の塗布方法

Related Child Applications (1)

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CN202010442591.3A Division CN111599979B (zh) 2014-10-18 2014-12-02 二次电池的电极形成方法

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CN106660065A CN106660065A (zh) 2017-05-10
CN106660065B true CN106660065B (zh) 2020-09-22

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CN201480080045.2A Active CN106660065B (zh) 2014-10-18 2014-12-02 粉粒体的涂布方法
CN202010442591.3A Active CN111599979B (zh) 2014-10-18 2014-12-02 二次电池的电极形成方法

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US (1) US10625297B2 (https=)
JP (1) JP6481154B2 (https=)
KR (1) KR102346145B1 (https=)
CN (2) CN106660065B (https=)
WO (1) WO2016059732A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
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KR102514736B1 (ko) * 2017-02-03 2023-03-27 히다치 조센 가부시키가이샤 분체막 형성방법 및 분체 성막장치
JP2020129495A (ja) * 2019-02-08 2020-08-27 エムテックスマート株式会社 全固体電池の製造方法
JP2021087905A (ja) * 2019-12-02 2021-06-10 エムテックスマート株式会社 粉粒体の塗布または成膜方法
CN111668455A (zh) * 2020-05-22 2020-09-15 宜春清陶能源科技有限公司 降低电池极片表面涂覆浆料过程中气泡量的方法及其在固态电解质涂布的应用
JP2022007837A (ja) * 2020-06-27 2022-01-13 正文 松永 粒子の製造方法、粒子またはスラリーの塗布方法、２次電池または２次電池の製造方法、全固体電池または全固体電池の製造方法、ｌｅｄまたはｌｅｄの製造方法、蛍光体シートまたは蛍光体シートの製造方法
JP2024054597A (ja) * 2022-10-05 2024-04-17 エムテックスマート株式会社 粉体の塗布方法、二次電池の製造方法、全固体電池の製造方法、二次電池、全固体電池

Citations (7)

* Cited by examiner, † Cited by third party
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JPH07172575A (ja) * 1993-12-17 1995-07-11 Nordson Kk 粉粒体の供給搬送方法
CN1159367A (zh) * 1995-12-27 1997-09-17 真空冶金株式会社 用于形成超细粒子薄膜的方法及其装置
JP2000301052A (ja) * 1999-04-16 2000-10-31 Anest Iwata Corp 粉体塗料の定量供給方法
JP2001170551A (ja) * 1999-12-15 2001-06-26 Nordson Kk 粉体塗装における粉体の微量搬送方法
JP2006313829A (ja) * 2005-05-09 2006-11-16 Konica Minolta Opto Inc 白色発光ダイオード及びその製造方法
CN101332452A (zh) * 2007-06-29 2008-12-31 兄弟工业株式会社 气雾剂产生设备、薄膜形成设备和气雾剂产生方法
CN103084315A (zh) * 2011-10-30 2013-05-08 湖南晟通科技集团有限公司 一种阳极钢爪的石墨糊喷涂物及其喷涂方法

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JPH07172575A (ja) * 1993-12-17 1995-07-11 Nordson Kk 粉粒体の供給搬送方法
CN1159367A (zh) * 1995-12-27 1997-09-17 真空冶金株式会社 用于形成超细粒子薄膜的方法及其装置
JP2000301052A (ja) * 1999-04-16 2000-10-31 Anest Iwata Corp 粉体塗料の定量供給方法
JP2001170551A (ja) * 1999-12-15 2001-06-26 Nordson Kk 粉体塗装における粉体の微量搬送方法
JP2006313829A (ja) * 2005-05-09 2006-11-16 Konica Minolta Opto Inc 白色発光ダイオード及びその製造方法
CN101332452A (zh) * 2007-06-29 2008-12-31 兄弟工业株式会社 气雾剂产生设备、薄膜形成设备和气雾剂产生方法
CN103084315A (zh) * 2011-10-30 2013-05-08 湖南晟通科技集团有限公司 一种阳极钢爪的石墨糊喷涂物及其喷涂方法

Also Published As

Publication number Publication date
CN106660065A (zh) 2017-05-10
KR102346145B1 (ko) 2021-12-30
KR20170072833A (ko) 2017-06-27
JP2016077982A (ja) 2016-05-16
WO2016059732A1 (ja) 2016-04-21
CN111599979B (zh) 2022-11-18
US10625297B2 (en) 2020-04-21
JP6481154B2 (ja) 2019-03-13
CN111599979A (zh) 2020-08-28
US20170136492A1 (en) 2017-05-18

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