CN106653979A - Fabrication method of high-efficiency Q-LED package structure - Google Patents
Fabrication method of high-efficiency Q-LED package structure Download PDFInfo
- Publication number
- CN106653979A CN106653979A CN201611221392.XA CN201611221392A CN106653979A CN 106653979 A CN106653979 A CN 106653979A CN 201611221392 A CN201611221392 A CN 201611221392A CN 106653979 A CN106653979 A CN 106653979A
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- China
- Prior art keywords
- layer
- quantum dot
- chip
- substrate
- film layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000002096 quantum dot Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 229920000052 poly(p-xylylene) Polymers 0.000 claims abstract description 10
- 239000012528 membrane Substances 0.000 claims description 7
- 238000007711 solidification Methods 0.000 claims description 6
- 230000008023 solidification Effects 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 4
- 241000218202 Coptis Species 0.000 claims description 3
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910002114 biscuit porcelain Inorganic materials 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010410 layer Substances 0.000 abstract 3
- 239000002313 adhesive film Substances 0.000 abstract 2
- 239000012790 adhesive layer Substances 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Illuminated Signs And Luminous Advertising (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a fabrication method of a high-efficiency Q-LED package structure. A traditional fluorescent powder layer is substituted by a quantum dot adhesive layer, a chip group is connected and fixed between two layers of transparent substrate to form a sandwich structure, the whole sandwich structure is placed in an armor metal structure, an opening is formed in an upper part of the metal structure, light given out from chips can be given out through the upper part, and the chips at two ends are connected with the outside from a lower part of the metal structure through wires. The fabrication method is simple in technology process, high in production efficiency and low in cost; quantum dots are sealed between two Parylene functional film layers, so that the high-efficiency Q-LED package structure can be used for a long time and cannot be affected by water and air, and the limitation of an environment condition is reduced; and the quantum dots are coated in an adhesive film form, so that the thickness of an adhesive film can be enabled to be uniform, and the light color is more uniform.
Description
（One）Technical field
The invention belongs to LED encapsulation technologies field, and in particular to a kind of manufacture method in efficient Q-LED encapsulating structures.
（Two）Background technology
Quantum dot is a kind of nanocrystal, high with luminous efficiency, long service life, the characteristics of color purity is good, with quantum dot
The Q-LED Display Techniques made can reach close continuous spectrum, with high color rendering and more preferable color displays characteristic, can
To make the luminance raising 30 ~ 40% of TV.Quantum dot is the luminous stocks of Q-LED.Realize Q-LED it is luminous mainly have two
The form of kind：One is utilized in as light conversion layer in GaN base LED, and effectively absorption blue emission goes out wavelength in visible-range
Accurate adjustable white light；Two is, using its electroluminescent form, to be coated between membrane electrode and lighted.It is at present to grind more
What is studied carefully is luminescence generated by light, and the research to electroluminescent properties is also weaker, and Q-LED is comprehensive in efficiency, life-span and processing technique etc.
Closing performance far can not also fully meet the requirement of people.
Q-LED will reach real world applications level, in addition it is also necessary to solve two key issues：How customized one be applied to
The quanta point material of LED；Two is the structure for how designing Q-LED, to reach the electro-optical efficiency of maximum.
（Three）The content of the invention
It is an object of the invention to provide a kind of efficient Q-LED encapsulating structures manufacture method.
The object of the present invention is achieved like this：On the basis of ZL201310132069.5, substituted with quantum dispensing layer
Conventional fluorescent bisque, chipset is connected and fixed between two-layer transparency carrier, forms sandwich sandwich.To entirely press from both sides
Rotating fields are placed in the middle of Sheathed metal structure, metal structure upper opening, the light that chip sends is sent from top, two ends
Chip by wire from metal structure bottom and external connection.Chipset includes at least one chip.
The present invention specific implementation method be：（1）Prepare quantum dot film layer：One layer of Parylene is deposited on substrate, will be measured
Sub- lattice array arrangement requires to be solidified after coating quantum dot on substrate successively, deposits one layer of Parylene layer after solidification again,
Quantum dot is enclosed between two-layer Parylene layer, is finally led to and is peeled off film layer from glass substrate, form final quantum point film
Layer；（2）The quick glue of coating ultraviolet light on the transparency carrier of conductive metal electrode is coated with two ends, quantum dot film layer is needed by encapsulation
Cut into it is suitably sized, and after being covered on substrate with automatic adhesive sticking machine, solidification；（3）To be pressed after chip gum
Certain rule arrangement is bonded in quantum dot film layer；（4）With gold thread by between chip chamber electrode and chip and substrate two ends exit electrodes
It is connected with each other；（5）Quantum dot glued membrane is pasted with same method on the shorter substrate of an other block length；（6）Two are led
It is staggered relatively in the middle of special mould that hot plate is covered with the one side of phosphor laminate, solidifies under uniform temperature and pressure condition,
Form Q-LED luminous bodys.
The invention has the beneficial effects as follows：1）The closer nature of white light that conventional fluorescent bisque is produced is substituted with quantum dot layer
Light, is conducive to health；2）Parylene coated quantum dots are used, glued membrane is made, can effectively ensure that quantum dot not by air and water
Impact, improve product service life, while it is more uniform to obtain thickness, it is ensured that light Color uniformity；3）Quantum dot is made
Into the form of glued membrane, the method technical process being covered in quantum dot in the form of glued membrane with automatic adhesive sticking machine on substrate is simple,
Can be required flexibly to be cut according to product size, production efficiency is high, strong applicability, low manufacture cost；4）Use transparent Gao Ji
Plate ensure that the heat derives produced during chip operation with sandwich sandwich fixed chip, improve dissipating for LED
Thermal characteristicss.
（Four）Description of the drawings
Fig. 1 is quantum dot film layer structure side view；
Fig. 2 is Q-LED encapsulating structure side views
（Five）Specific embodiment
With reference to the accompanying drawings and detailed description the present invention is described in detail.
With reference to Fig. 1-2, the present embodiment is concretely comprised the following steps：Prepare quantum dot film layer：1 one layer of Parylene 2 of deposition on substrate,
Quantum dot array 3 is arranged after requirement coats quantum dot on substrate successively and is solidified, deposited one layer after solidification again and send auspicious
Woods layer 11, quantum dot is enclosed between two-layer Parylene layer, is finally led to and is peeled off film layer from glass substrate, forms final quantity
Son point film layer；The quick glue of coating ultraviolet light on the transparency carrier 4 of conductive metal electrode is coated with two ends, by quantum dot film layer 5 by envelope
Dress need to cut into it is suitably sized, and after being covered in 4 on substrate with automatic adhesive sticking machine, solidification；To incite somebody to action after the gum of chip 6
It is arranged be bonded in quantum dot film layer 5 according to certain rules；With gold thread 7 by chip chamber electrode and chip and substrate two ends exit electrodes
Between be connected with each other；Quantum dot glued membrane 10 is pasted with same method on the shorter substrate 9 of an other block length；By two heat conduction
It is staggered relatively in the middle of special mould that plate is covered with the one side of phosphor laminate, solidifies under uniform temperature and pressure condition, shape
Into Q-LED luminous bodys.
Above content is the further description done to the present invention with reference to specific preferred implementation, it is impossible to assert
The present invention be embodied as be only limited to these explanations.For the personnel with art rudimentary knowledge of the present invention, can be with
It is easy to change the present invention and changed, these changes and modification should all be considered as belonging to the right submitted to of the invention and want
The scope of patent protection for asking book to determine.
Claims (2)
1. a kind of efficient Q-LED encapsulating structures manufacture method, it is characterised in that substitute conventional fluorescent bisque with quantum dispensing layer,
Chipset is connected and fixed between two-layer transparency carrier, sandwich sandwich is formed, whole sandwich is placed in into armour
In the middle of dress metal structure, metal structure upper opening allows the light that chip sends to send from top, and the chip at two ends is by leading
Line includes at least one chip from metal structure bottom and external connection, chipset.
2. a kind of efficient Q-LED encapsulating structures manufacture method according to claim 1, it is characterised in that concrete steps bag
Include：（1）Prepare quantum dot film layer：One layer of Parylene is deposited on substrate, quantum dot array arrangement is required successively on substrate
Coat and solidified after quantum dot, deposit one layer of Parylene layer after solidification again, by quantum dot be enclosed in two-layer Parylene layer it
Between, finally lead to and peel off film layer from glass substrate, form final quantum point film layer；（2）Conductive metal electrode is coated with two ends
Transparency carrier on the quick glue of coating ultraviolet light, quantum dot film layer is needed to cut into by encapsulation it is suitably sized, and with patch automatically
After glue machine is covered on substrate, solidification；（3）Quantum dot film layer is bonded at by it is arranged according to certain rules after chip gum
On；（4）To be connected with each other between chip chamber electrode and chip and substrate two ends exit electrodes with gold thread；（5）Existed with same method
Quantum dot glued membrane is pasted on the shorter substrate of an other block length；（6）Two heat-conducting plates are covered with into the one side phase of phosphor laminate
To being placed in the middle of special mould, solidify under uniform temperature and pressure condition, form Q-LED luminous bodys.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611221392.XA CN106653979A (en) | 2016-12-27 | 2016-12-27 | Fabrication method of high-efficiency Q-LED package structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611221392.XA CN106653979A (en) | 2016-12-27 | 2016-12-27 | Fabrication method of high-efficiency Q-LED package structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106653979A true CN106653979A (en) | 2017-05-10 |
Family
ID=58831395
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611221392.XA Pending CN106653979A (en) | 2016-12-27 | 2016-12-27 | Fabrication method of high-efficiency Q-LED package structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106653979A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116344460A (en) * | 2023-03-28 | 2023-06-27 | 上海韬润半导体有限公司 | Packaging and sheet-loading film, manufacturing method and application |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110273863A1 (en) * | 2010-05-04 | 2011-11-10 | Zou Cai | LED light source |
| CN103236485A (en) * | 2013-04-16 | 2013-08-07 | 哈尔滨奥瑞德光电技术股份有限公司 | Method for manufacturing illuminant on transparent sapphire heat conductive plate |
| CN103456865A (en) * | 2013-09-03 | 2013-12-18 | 易美芯光（北京）科技有限公司 | LED package |
| CN103542326A (en) * | 2013-09-30 | 2014-01-29 | 易美芯光（北京）科技有限公司 | Optical device capable of realizing high-color-gamut backlight |
| CN204204899U (en) * | 2014-11-05 | 2015-03-11 | 创维液晶器件(深圳)有限公司 | A kind of high-color rendering white-light exempts from packaged LED |
| CN105315621A (en) * | 2014-07-10 | 2016-02-10 | Tcl集团股份有限公司 | Quantum dot/epoxy resin particle, preparation method thereof, quantum dot optical film and backlight module |
| CN106129229A (en) * | 2016-08-24 | 2016-11-16 | 天津中环电子照明科技有限公司 | A kind of LED packaging based on quantum dot granule and preparation method thereof |
| CN106129228A (en) * | 2016-07-06 | 2016-11-16 | 苏州星烁纳米科技有限公司 | Quantum dot packaging body and preparation method thereof, light-emitting device and display device |
-
2016
- 2016-12-27 CN CN201611221392.XA patent/CN106653979A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110273863A1 (en) * | 2010-05-04 | 2011-11-10 | Zou Cai | LED light source |
| CN103236485A (en) * | 2013-04-16 | 2013-08-07 | 哈尔滨奥瑞德光电技术股份有限公司 | Method for manufacturing illuminant on transparent sapphire heat conductive plate |
| CN103456865A (en) * | 2013-09-03 | 2013-12-18 | 易美芯光（北京）科技有限公司 | LED package |
| CN103542326A (en) * | 2013-09-30 | 2014-01-29 | 易美芯光（北京）科技有限公司 | Optical device capable of realizing high-color-gamut backlight |
| CN105315621A (en) * | 2014-07-10 | 2016-02-10 | Tcl集团股份有限公司 | Quantum dot/epoxy resin particle, preparation method thereof, quantum dot optical film and backlight module |
| CN204204899U (en) * | 2014-11-05 | 2015-03-11 | 创维液晶器件(深圳)有限公司 | A kind of high-color rendering white-light exempts from packaged LED |
| CN106129228A (en) * | 2016-07-06 | 2016-11-16 | 苏州星烁纳米科技有限公司 | Quantum dot packaging body and preparation method thereof, light-emitting device and display device |
| CN106129229A (en) * | 2016-08-24 | 2016-11-16 | 天津中环电子照明科技有限公司 | A kind of LED packaging based on quantum dot granule and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116344460A (en) * | 2023-03-28 | 2023-06-27 | 上海韬润半导体有限公司 | Packaging and sheet-loading film, manufacturing method and application |
| CN116344460B (en) * | 2023-03-28 | 2023-09-01 | 上海韬润半导体有限公司 | Packaging and sheet-loading film, manufacturing method and application |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170510 |