CN107093600A - Without substrate LED white chips and its manufacture craft - Google Patents
Without substrate LED white chips and its manufacture craft Download PDFInfo
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- CN107093600A CN107093600A CN201710228865.7A CN201710228865A CN107093600A CN 107093600 A CN107093600 A CN 107093600A CN 201710228865 A CN201710228865 A CN 201710228865A CN 107093600 A CN107093600 A CN 107093600A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Abstract
One kind comprises the following steps without substrate LED white chips and its manufacture craft：A. in the superficial growth GaN epitaxial layer of Sapphire Substrate, and several P electrodes and N electrode alternately uniformly are plated in the basal surface of GaN epitaxial layer；B. GaN epitaxial layer is cut into several extension layer units in units of a P electrode and a N electrode, Sapphire Substrate is not cut；C., the one side of P electrode and N electrode is fixed on to the surface of a plane, Sapphire Substrate is then peeled off；D. the surface of the GaN epitaxial layer of Sapphire Substrate and the side coating uniform fluorescent coating of a layer thickness are being peeled off, is then being solidified fluorescent coating by high temperature；E. after fluorescent coating solidifies at high temperature, whole epitaxial layer is taken off together with fluorescent coating from flat board, and single or multiple CSP chips finished products are cut into along the gap between adjacent epitaxial layer unit.The chip light emitting efficiency high scope of the present invention is big, and heat-conductive characteristic is good, and service life is long, is easy to packing and storing to transport.
Description
Technical field
The present invention relates to LED chip field, espespecially one kind is without substrate LED white chips and its manufacture craft.
Background technology
LED development trends be no bonding wire without encapsulation, so-called is exactly using inverted structure chip, to be directly welded at base without bonding wire
On plate.The structure of flip-chip be electrode and luminescent layer in the bottom of transparent sapphire substrate, with positive cartridge chip on the contrary, so heat
Amount can be guided directly from substrate, it is not necessary to which by adiabatic Sapphire Substrate, and CURRENT DISTRIBUTION is more uniform so that chip can
To be used under bigger current density, the cost of bonding wire and the hidden danger of broken string are more eliminated.Flip chip structure approximately as：
Including water white transparency Sapphire Substrate, thickness about 120-250um；The GaN epitaxial layer of growth on a sapphire substrate, this is one
Sandwich construction, the luminescent layer of chip just wherein, whole epitaxy layer thickness only 5-10um；Electrode, two electrodes are respectively P and N,
It is plated on epitaxial layer, the luminescent layer after energization in epitaxial layer just lights, because sapphire is water white transparency, so luminous can milli
Without hindrance transmission sapphire is issued.
The so-called flip-chip for referring to be coated with fluorescent material in advance without encapsulation, also referred to as (CSP=Chip Scale
Package), i.e. wafer-level package.Because Sapphire Substrate is transparent crystal, flip-chip is five face light extractions, so fluorescent material
Upper surface and four sides must be coated in, while the electrode zone of bottom must not be polluted by silica gel and fluorescent material.Current fluorescence
The coating structure of powder is as follows：
Formed using the compacting of silica gel fluorescent material, five face light extractions, light efficiency is high, but the control of the colour temperature uniformity of top and surrounding compared with
Difference, the CSP that moral person of outstanding talent's profit reaches is also based on this.
Fluorescent film is covered using the protection of surrounding titanium dioxide again, only one light-emitting area in top, the uniformity and directive property of light
Very well, but have lost the light output of surrounding, light efficiency can be relatively low.Current Samsung is mainly used based on this technology, but is also existed
The first technology that exploitation moral person of outstanding talent's profit reaches.Moral person of outstanding talent profit is up to also in exploitation this technical products of Samsung.
Using fluorescent film all standing, then add transparent silica gel fixed-type, be also five face light extractions, light efficiency is high, and light quality is slightly worse,
Such mainly Philip is used.
No matter which kind of above-mentioned preparation method, be exactly the characteristics of common：
All across Sapphire Substrate thick 120-250um between chip surface fluorescent material and substrate, and sapphire is heat-barrier material,
The heat of fluorescent material generation is blocked to the conduction of substrate, it is very high to cause fluorescent material temperature, greatly reduces luminous efficiency, together
When, too high temperature accelerates the aging of silica gel, and particularly in the case of high density is powerful, problem is more serious.
In the application of the optical system equipped with optically focused such as shot-light Projecting Lamp and car light, that really efficiently utilize is LED
Positive light extraction, and the area that the thicker sides of LED are accounted for is bigger, side light extraction greatly lost.
Sapphire Substrate is the colourless transparent crystal of thickness uniform outer surface any surface finish in itself, and refractive index is higher than silica gel, light
Line can be totally reflected in Sapphire Substrate with silica gel interface, be had a significant impact to light extraction.
It can be seen that, these above-mentioned problems all Sapphire Substrates are caused, and sapphire is used as GaN epitaxial layer（Luminescent layer）'s
Substrate is essential during epitaxial growth, while being also the non-yielding prop of epitaxial layer.Sapphire Substrate is to shell
From, the stripping of Sapphire Substrate is a very ripe technology, and chip production producer is making another chip --- hang down
During straight fabric chip, the Sapphire Substrate of insulation is changed into conductive substrates, it is necessary to peel off Sapphire Substrate, the method for use
It is first to fit to conductive substrates on epitaxial layer, then is peeled off the Sapphire Substrate at the back side with laser lift-off technique.And for falling
Cartridge chip is all then to be packaged into LED together with Sapphire Substrate, does not do substrate desquamation, reason is：
Light emitting epitaxial layer thickness only has 5um or so, extremely fragile, broken at a touch, and supporting is lost after substrate desquamation can not pick up, divide
Choosing, transport, packaging, encapsulation factory also can not die bond；
Sapphire is transparent in itself, influences little to light extraction, and itself is again extremely hard, no matter pick up, sort, transporting, packing,
Die bond can bear very big pressure and impact, extremely easy to use；
Laser lift-off needs special equipment, and strict condition, encapsulation factory does not possess typically；
Substrate desquamation is generally all the stripping of whole epitaxial wafer, and encapsulates the chip that factory takes and cut into single.
From above-mentioned analysis, the substrate desquamation of flip-chip is made into no substrate LED with very big advantage, it is existing at present
Method be：
In the Chinese invention patent of Application No. 201510719701.5 and 201520850711.8, by the upside-down mounting core of substrate desquamation
Piece installs protective layer additional, and sapphire is substituted as an interim supporting to pick up and to use equal to a protective layer, this
Protective layer is interim, and is easily removed.Encapsulation factory removes protective layer after die bond, only remaining outer without substrate
Prolong layer.What the two patents were solved is the carrying problem of epitaxial layer after sapphire is peeled off, and is exactly briefly that chip factory first will be blue precious
Stone substrate desquamation, then changes the protective layer that can be washed with simple solvent, there is protective layer, and chip just can be as normal core
The same sorted and packaged transport die bond of piece, encapsulation factory or user just obtain no substrate after die bond with solution washes away protective layer
Epitaxial layer.This patent of invention topic is no substrate LED chip method for packing, does not refer to encapsulation, interim guarantor actually
Sheath is without fluorescent material and is removed again before packaging, is only left epitaxial layer, also let alone be wafer-level package.Essence
Exactly add an interim packaging to operate to the epitaxial layer for peeling off substrate.
The Chinese invention patent of Application No. 201410355924.3 is that electrode is accomplished into chip in chip preparing process
Sideways, so as to eliminate substrate, but this transport for not solving chip uses problem；
The improvement of the chip fabrication technique of the Chinese invention patent paper of Application No. 201210561072.4 so that no matter
Any substrate can make inverted structure, while also teaching the processing after substrate desquamation, the method for use is first by sapphire
Or other substrate desquamations, then by the laminating of the ceramic wafer for being mixed with fluorescent material or glass plate that have prepared up, substitute original
Substrate can also send white light simultaneously as permanent support.But there are problems that two：
Either ceramic wafer or glass plate, all use when being fitted with chip and are mentioned in gluing company, patent with silica gel, UV glue or epoxy
Resin, and this layer of glue is equal to one layer of medium is added between ceramic wafer or glass plate and epitaxial layer, due to the difference of refractive index,
Light can be still totally reflected in this layer of medium, actually as the effect of the Sapphire Substrate before stripping, not
Eliminate by backing tape come light loss, be sapphire has been changed into glue；
Ceramic wafer or glass plate are a flat boards, the surface of chip can only be covered in, when whole epitaxial wafer is cut into one single chip
Afterwards, i.e. single chip epitaxial layer side cut surface be not covered with ceramics or glass, can not also cover, what epitaxial layer was sent
Blue light can come out from side leakage, and the surface for being as a result exactly chip sends white light and the side of surrounding sends blue light, and this is in application
On be not all right.
Also a kind of scheme be epitaxial layer the electrode side coating epoxy resin drawn as supporting, then by electrode
Come, then the Sapphire Substrate of another side is peeled off, but epoxy resin is also heat-insulating material, is changed into equal to adiabatic sapphire
Epoxy resin, difference is exactly to move on to lower surface from the upper surface of epitaxial layer, and not only the bad problem of the heat conduction of fluorescent material is still deposited
The original epitaxial layer in the absence of the bad problem of heat conduction is also set to add a thermal resistance.
The content of the invention
One of to solve the above problems, the present invention provides a kind of without substrate LED white chips, and its luminous efficiency is high, and heat is passed
Lead performance good, service life is long, is easy to packing and storing to transport.
To achieve the above object, the technical solution adopted by the present invention is：One kind is without substrate LED white chips, including outside GaN
Prolong layer, P electrode, N electrode, fluorescent coating, wherein the P electrode, N electrode are plated on the basal surface of GaN epitaxial layer, it is described glimmering
The covering of light powder coating is fixed on the upper surface of GaN epitaxial layer and side surface.
For solve the above problems two, the present invention provides a kind of manufacture craft without substrate LED white chips, and it makes work
Skill is simple, epitaxial layer non-yielding prop when can effectively solve the problems, such as to peel off Sapphire Substrate.
To achieve the above object, the technical solution adopted by the present invention is：A kind of making work without substrate LED white chips
Skill, comprises the following steps：
A. in the superficial growth GaN epitaxial layer of Sapphire Substrate, and several P alternately uniformly are plated in the basal surface of GaN epitaxial layer
Electrode and N electrode；
B. GaN epitaxial layer is cut into several extension layer units, sapphire lining in units of a P electrode and a N electrode
Do not cut at bottom；
C. the inharmonious glued membrane of Double-side hot or two-sided UV glued membranes are pasted in the surface correspondence of a high temperature resistant flat board or glass plate, by P electricity
The one side of pole and N electrode is fixed on hot inharmonious glued membrane or two-sided UV film surfaces, then peels off Sapphire Substrate, remaining to have cut
The extension layer unit cut；
D. the surface of the GaN epitaxial layer of Sapphire Substrate and the side coating uniform fluorescent coating of a layer thickness are being peeled off,
Then fluorescent coating is solidified by high temperature；
E. after fluorescent coating solidifies at high temperature, by the back side illuminaton UV light of glass plate, if using hot inharmonious glued membrane
UV light need not be irradiated, then whole epitaxial layer is taken off together with fluorescent coating from flat board, and along between adjacent epitaxial layer unit
Gap cut into single or multiple connected CSP chip finished products.
The beneficial effects of the present invention are：
1. the Sapphire Substrate of flip-chip is stripped, it is not the interim guarantor without fluorescent material to be coated in GaN epitaxial layer
Sheath, but the blue light that GaN epitaxial layer can be sent containing fluorescent material changes into the fluorescent material permanent coating of white light；
2. fluorescent coating is applied directly in GaN epitaxial layer, the heat that fluorescent material is produced in use can be directly by very thin
GaN epitaxial layer be transmitted in LED-baseplate, be no longer pass through thick adiabatic Sapphire Substrate, greatly reduce fluorescent material painting
The temperature of layer, improves luminous flux and service life；
3. fluorescent coating is not only supporting role, inherently white chip CSP part, either picks up, divide
Choosing, packaging, transport are still used, and are no longer removed forever；
It has been just the white chip CSP of single 4. being cut after fluorescent coating solidification, LED is sealed before sorted and packaged transport
Dress has been completed, and is real wafer-level package；
5. fluorescent coating is directly bonded with GaN epitaxial layer, centre does not need transition zone compared with pasted with ceramic veneer piece or sheet glass
Carry out adhesion also without extra glue, fundamentally eliminate the light loss that extra adhesive layer is brought；
6. fluorescent coating is not only applied to the upper surface of GaN epitaxial layer, the side surface of GaN epitaxial layer is also covers, there is no
Blue leakage, glow color uniformity；
7. the granularity median of fluorescent material is about 15um or so in fluorescent coating, increase fluorescent material is in silica gel or asphalt mixtures modified by epoxy resin
Concentration in fat can just accomplish fluorescent coating tens um thickness, greatly reduce the thickness of product；
8. the cutting compared to traditional ceramics or glass plate is difficult to very slow, and frangible defect, fluorescent coating is cut
Cut and be easy to and efficiency high.
Brief description of the drawings
Fig. 1 is the structural representation of the present invention；
Fig. 2 is outer layer growth and plated electrode process schematic representation；
Fig. 3 is epitaxial layer cutting technique schematic diagram；
Fig. 4 is Sapphire Substrate stripping technology schematic diagram；
Fig. 5 is coating fluorescent powder coating process schematic diagram；
Fig. 6 is finished product with the cutting schematic diagram of 2 × 3 specifications；
Fig. 7 is finished product with the cutting schematic diagram of 1 × 4 specification；
Fig. 8 is that finished product cuts schematic diagram with 5 × 5 specifications.
Embodiment
Below by specific embodiment, the present invention is further illustrated.
As shown in figure 1, the present invention relates to one kind without substrate LED white chips, including GaN epitaxial layer 1, P electrode 2, N electrode
3rd, fluorescent coating 4, wherein the P electrode 2, N electrode 3 are plated on the basal surface of GaN epitaxial layer 1, the fluorescent coating 4 covers
Lid is fixed on the upper surface of GaN epitaxial layer 1 and side surface, wherein being without the overall length and width size of substrate LED white chips
100um to 3mm, fluorescent coating is mixed by fluorescent material with silica gel or epoxy resin, wherein the center granularity of fluorescent material
In 3um-25um, the thickness of fluorescent coating 4 is from 10um to 500um；Fluorescent coating 4 solidify after normal temperature hardness in shore
More than 60A,.
The invention further relates to a kind of manufacture craft without substrate LED white chips, comprise the following steps：
A. as shown in Fig. 2 in the superficial growth GaN epitaxial layer 1 of Sapphire Substrate 5, and it is uniform in the basal surface of GaN epitaxial layer 1
Alternating plates several P electrodes 2 and N electrode 3；
B. as shown in figure 3, GaN epitaxial layer 1 is cut into several epitaxial layers in units of a P electrode 2 and a N electrode 3
Unit, Sapphire Substrate is not cut in this step；Interval between extension layer unit is from 20um to 200um；
C. as shown in figure 4, pasting Double-side hot inharmonious glued membrane or two-sided in the surface correspondence of a high temperature resistant flat board 6 or glass plate 6
UV glued membranes, are fixed on hot inharmonious glued membrane or two-sided UV film surfaces by the one side of P electrode 2 and N electrode 3, then peel off sapphire
Substrate 5；Wherein the stripping means of Sapphire Substrate 5 includes laser lift-off, wet etching stripping or mechanical lapping stripping；High temperature resistant
The heat resisting temperature of flat board 6 is more than 150 DEG C.
D. as shown in figure 5, peeling off the surface of the GaN epitaxial layer 1 of Sapphire Substrate 5 and side coating a layer thickness
Uniform fluorescent coating 4, is then solidified fluorescent coating 4 by high temperature；
E. after fluorescent coating 4 solidifies at high temperature, by the back side illuminaton UV light of glass plate, hot inharmonious glued membrane is such as used
UV light need not be then irradiated, then whole epitaxial layer is taken off together with fluorescent coating 4 from flat board 6, and along adjacent epitaxial layer unit
Between gap cut into single or multiple connected CSP chip finished products.
Specifically, single CSP chips are also not necessarily limited to be square, can be rectangles, the luminous of GaN epitaxial layer 1 can
Be blueness（Dominant wavelength 440-480nm）Or bluish violet or near ultraviolet（Dominant wavelength 350-440nm）Or it is remote
It is ultraviolet（220-350nm）, fluorescent coating 4 be can effectively be excited by blue light or blue violet light/ultraviolet light hair blue/yellow/
The fluorescent material of green/orange/red/infrared light, and two or more mixing in above-mentioned fluorescent material；Two or more fluorescence
Powder coating 4 can be used in mixed way, and can also be layered coating；Two or more fluorescent coatings 4 can be with discrete coating, i.e., by certain
Region be respectively applied and constitute different colors；A certain proportion of diffuse-reflective material can be mixed in fluorescent coating if necessary；
Fluorescent material in fluorescent coating 4 can be inorganic material or organic material；Electrode material can be copper or gold, or copper electricity
It is extremely gold-plated;GaN epitaxial layer 1 is not necessarily cut into single CSP when finally cutting, and can be cut according to certain array, such as：
2x3,1x4,5x5 etc. as shown in fig. 6-7, so just reduce the number of times of die bond, greatly improve efficiency when in use;Sapphire
The stripping of substrate 5 can be the stripping of whole epitaxial wafer, and epitaxial wafer that can also be after fragmentation is peeled off, can also be to cutting after
Discrete conventional flip-chips are peeled off.
Embodiment of above is only that the preferred embodiment of the present invention is described, and not the scope of the present invention is entered
Row is limited, on the premise of design spirit of the present invention is not departed from, technical side of this area ordinary skill technical staff to the present invention
In various modifications and improvement that case is made, the protection domain that claims of the present invention determination all should be fallen into.
Claims (8)
1. one kind is without substrate LED white chips, it is characterised in that including GaN epitaxial layer, P electrode, N electrode, fluorescent coating,
Wherein described P electrode, N electrode are plated on the basal surface of GaN epitaxial layer, and the fluorescent coating covering is fixed on GaN epitaxial layer
Upper surface and side surface on.
2. it is according to claim 1 without substrate LED white chips, it is characterised in that overall without substrate LED white chips
Length and width size is 100um to 3mm.
3. it is according to claim 1 without substrate LED white chips, it is characterised in that：Fluorescent coating by fluorescent material with
Silica gel or epoxy resin are mixed, and wherein the center granularity of fluorescent material is in 3um-25um.
4. it is according to claim 1 without substrate LED white chips, it is characterised in that：The thickness of fluorescent coating is from 10um
To 500um；
5. it is according to claim 1 without substrate LED white chips, it is characterised in that：After fluorescent coating solidification
The hardness of normal temperature is in more than shore 60A.
6. a kind of manufacture craft as claimed in claim 1 without substrate LED white chips, it is characterised in that including following step
Suddenly：
A. in the superficial growth GaN epitaxial layer of Sapphire Substrate, and several P alternately uniformly are plated in the basal surface of GaN epitaxial layer
Electrode and N electrode；
B. GaN epitaxial layer is cut into several extension layer units, sapphire lining in units of a P electrode and a N electrode
Do not cut at bottom；
C. in the inharmonious glued membrane of surface mount Double-side hot of a high temperature resistant flat board, the one side of P electrode and N electrode is fixed on heat inharmonious
Film surface, then peels off Sapphire Substrate；
D. the surface of the GaN epitaxial layer of Sapphire Substrate and the side coating uniform fluorescent coating of a layer thickness are being peeled off,
Then fluorescent coating is solidified by high temperature；
E. after fluorescent coating solidifies at high temperature, whole epitaxial layer is taken off together with fluorescent coating from flat board, and along adjacent
Gap between extension layer unit cuts into single or multiple CSP chips finished products.
7. the manufacture craft according to claim 6 without substrate LED white chips, it is characterised in that in step C, Lan Bao
The stripping means at stone lining bottom includes laser lift-off, wet etching and peeled off or mechanical lapping stripping.
8. according to the manufacture craft according to claim 6 without substrate LED white chips, it is characterised in that in step B,
Interval between extension layer unit is from 20um to 200um.
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