CN106652926A - 显示面板、其制造方法与其驱动方法 - Google Patents

显示面板、其制造方法与其驱动方法 Download PDF

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CN106652926A
CN106652926A CN201510966685.XA CN201510966685A CN106652926A CN 106652926 A CN106652926 A CN 106652926A CN 201510966685 A CN201510966685 A CN 201510966685A CN 106652926 A CN106652926 A CN 106652926A
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image element
element circuit
source electrode
transistor
display floater
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黄如琳
程智修
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Novatek Microelectronics Corp
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Novatek Microelectronics Corp
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    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611Control of matrices with row and column drivers
    • G09G3/3648Control of matrices with row and column drivers using an active matrix
    • G09G3/3655Details of drivers for counter electrodes, e.g. common electrodes for pixel capacitors or supplementary storage capacitors
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    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
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    • GPHYSICS
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    • GPHYSICS
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    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G09G3/3225Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
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    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611Control of matrices with row and column drivers
    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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Abstract

本发明提供一种显示面板、其制造方法与其驱动方法。显示面板包括至少一源极线以及多个像素电路。这些像素电路的源极端耦接至源极线。这些像素电路包含近像素电路与远像素电路。近像素电路至源极驱动器的距离小于远像素电路至源极驱动器的距离。近像素电路的源极端的输入阻抗(在开启状态下)大于远像素电路的源极端的输入阻抗(在开启状态下)。本发明可以使在同一条源极线不同位置的不同像素电路的源极端具有不同的开启输入阻抗,以便补偿在同一条源极线不同位置的源极线阻抗差异。

Description

显示面板、其制造方法与其驱动方法
技术领域
本发明涉及一种显示设备,且特别涉及一种显示面板、其制造方法与其驱动方法。
背景技术
显示面板通常配置有多个像素(pixel)电路。这些像素电路具有相同的布局结构,因此电性特性彼此相似。举例来说,不同位置的这些像素电路的源极端可能具有相同的输入阻抗。源极驱动器可以经由不同的源极线将不同的像素电压传输至这些像素电路的源极端。栅极驱动器可以经由不同的栅极线将不同相位的扫描脉冲传输至这些像素电路的栅极端,以便于不同时间开启这些像素电路。这些扫描脉冲的高压准位(栅极高电压)互为相同。配合栅极驱动器的扫描时序,这些像素电压可以被写入对应的像素电路中以显示影像。
源极线一般具有阻抗(电阻性阻抗与电容性阻抗)。随着显示面板尺寸越大(源极线越长),则源极线的阻抗越大。再者,显示面板密集度/分辨率越高(源极线越细),则源极线的阻抗也越大。因为源极线的阻抗,连接于同一条源极端的不同像素电路将具有不同的时间常数。远离源极驱动器的像素电路的时间常数会大于接近源极驱动器的像素电路的时间常数。时间常数越大,像素电路的充电时间越短。在显示面板尺寸越来越大、不断增加分辨率与频率的发展趋势下,源极线的阻抗所造成的时间常数差异将会变得不容忽视。时间常数差异(充电时间差异)可能造成显示异常。
发明内容
本发明提供一种显示面板、其制造方法与驱动方法,其可以补偿在同一条源极线不同位置的不同像素电路的源极线阻抗差异。
本发明实施例的一种显示面板包括至少一源极线以及多个像素电路。这些像素电路的源极端耦接至源极线。这些像素电路包含近像素电路与远像素电路。近像素电路至源极驱动器的距离小于远像素电路至源极驱动器的距离。在开启状态下近像素电路的源极端的输入阻抗大于在开启状态下远像素电路的源极端的输入阻抗。
本发明实施例的一种显示面板的制造方法,包括:提供至少一源极线于显示面板;提供多个像素电路于显示面板,其中这些像素电路的源极端耦接至源极线,这些像素电路包含近像素电路与远像素电路,近像素电路至源极驱动器的距离小于远像素电路至源极驱动器的距离;以及调整这些像素电路的源极端的输入阻抗,使得在开启状态下近像素电路的源极端的输入阻抗大于在开启状态下远像素电路的源极端的输入阻抗。
本发明实施例提供一种显示面板的驱动方法。显示面板包括至少一源极线、一第一栅极线、一第二栅极线与多个像素电路。这些像素电路的源极端耦接至源极线。这些像素电路包含近像素电路与远像素电路。近像素电路至源极驱动器的距离小于远像素电路至源极驱动器的距离。近像素电路的栅极端电性连接至第一栅极线。远像素电路的栅极端电性连接至第二栅极线。所述驱动方法包括:提供第一栅极高电压至第一栅极线,以开启近像素电路;以及提供第二栅极高电压至第二栅极线,以开启远像素电路,其中第一栅极线的第一栅极高电压小于第二栅极线的第二栅极高电压,使得在开启状态下近像素电路的源极端的输入阻抗大于在开启状态下远像素电路的源极端的输入阻抗。
基于上述,本发明实施例所述显示面板、及其制造方法与驱动方法可以使在同一条源极线不同位置的不同像素电路的源极端具有不同的开启输入阻抗(在开启状态下的输入阻抗),以便补偿在同一条源极线的不同位置的源极线阻抗差异。
为让本发明的上述特征和优点能更明显易懂,下文特举实施例,并配合附图作详细说明如下。
附图说明
图1是依照本发明实施例说明一种显示设备的电路方框示意图;
图2是依照本发明实施例说明图1所示源极线SL_1的等效电路示意图;
图3是依照本发明说明一种显示面板的制造方法的流程示意图;
图4是依照本发明说明一种显示面板的驱动方法的流程示意图。
附图标记:
100:显示设备
120:栅极驱动器
130:源极驱动器
140:显示面板
211:第一晶体管
212:第一电容
251:第二晶体管
252:第二电容
CL:电容
Ct1、Ct5:电容值
GL_1、GL_2、GL_5、GL_m:栅极线
P(1,1)、P(1,2)、P(1,n)、P(2,1)、P(2,2)、P(2,n)、P(5,1)、P(m,1)、P(m,2)、P(m,n):像素电路
RL:电阻
Ron1、Ron5:导通电阻
SL_1、SL_2、SL_n:源极线
S310、S320、S410、S420:步骤
具体实施方式
在本发明说明书全文(包括权利要求书)中所使用的“耦接(或连接)”一词可指任何直接或间接的连接手段。举例而言,若文中描述第一装置耦接(或连接)于第二装置,则应该被解释成该第一装置可以直接连接于该第二装置,或者该第一装置可以通过其他装置或某种连接手段而间接地连接至该第二装置。另外,凡可能之处,在附图及实施方式中使用相同标号的组件/构件/步骤代表相同或类似部分。不同实施例中使用相同标号或使用相同用语的组件/构件/步骤可以相互参照相关说明。
图1是依照本发明实施例说明一种显示设备100的电路方框示意图。显示设备100包括至少一个栅极驱动器120、至少一个源极驱动器130以及一个显示面板140。显示面板140具有两基板(Substrate),而且于两基板间填充有液晶材料。显示面板140设置有多条源极线(source line,或称数据线,例如图1所示SL_1、SL_2、…、SL_n,其中n为正整数)、多条栅极线(gateline,或称扫描线,例如图1所示GL_1、GL_2、…、GL_m,其中m为正整数)以及多个像素(pixel)电路(例如图1所示P(1,1)、P(1,2)、…、P(1,n)、P(2,1)、P(2,2)、…、P(2,n)、P(m,1)、P(m,2)、…、P(m,n))。源极线SL_1~SL_n垂直于栅极线GL_1~GL_m。像素单元P(1,1)~P(m,n)以矩阵的方式分布于显示面板140上。这些像素电路P(1,1)~P(m,n)的源极端分别耦接至源极线SL_1~SL_n中的对应源极线,而这些像素电路P(1,1)~P(m,n)的栅极端分别耦接至栅极线GL_1~GL_m中的对应栅极线,如图1所示。
栅极驱动器120的多个输出端以一对一方式耦接至不同栅极线GL_1~GL_m。栅极驱动器120可以一个接着一个地轮流驱动(或扫描)显示面板140的每一条栅极线。例如,栅极线GL_1先被驱动,然后依序驱动栅极线GL_2~GL_m。
源极驱动器130可以将多个数字像素数据转换为对应像素变压。配合栅极驱动器120的扫描时序,源极驱动器130可以经由源极线SL_1~SL_n将这些对应像素变压写入显示面板140的对应像素电路中(例如图1所示像素电路P(1,1)~P(m,n))以显示影像。
源极线SL_1~SL_n一般具有阻抗(电阻性阻抗与电容性阻抗)。随着显示面板140尺寸越大(源极线越长),则源极线SL_1~SL_n的阻抗越大。再者,显示面板140密集度/分辨率越高(源极线越细),则源极线SL_1~SL_n的阻抗亦越大。
图2是依照本发明实施例说明图1所示源极线SL_1的等效电路示意图。为方便说明,在此将设定源极线SL_1的像素电路个数为5(即m=5)。图2显示了像素电路P(1,1)与P(5,1)的等效电路图,而显示面板140中的其他像素电路可以参照像素电路P(1,1)与P(5,1)而类推。基于像素电路P(1,1)至源极驱动器130的距离小于像素电路P(5,1)至源极驱动器130的距离,以下将称像素电路P(1,1)为“近像素电路”,而称像素电路P(5,1)为“远像素电路”。于图2中,电阻RL与电容CL分别表示源极线SL_1(金属线)的电阻性阻抗与电容性阻抗。于近像素电路P(1,1)处,源极线SL_1的时间常数约略为RL*CL。于远像素电路P(5,1)处,源极线SL_1的时间常数约略为15RL*CL。本实施例可以调整这些像素电路P(1,1)~P(m,n)在开启状态下的源极端的输入阻抗。例如,使近像素电路P(1,1)在开启状态下的源极端的输入阻抗大于远像素电路P(5,1)在开启状态下的源极端的输入阻抗,以补偿源极线SL_1于不同位置的阻抗差异(即补偿源极线SL_1于不同位置的时间常数差异)。
进一步,近像素电路P(1,1)包括第一晶体管211与第一电容212。第一晶体管211的源极电性连接至源极线SL_1。第一晶体管211的漏极电性连接至第一电容212。第一晶体管211的栅极电性连接至显示面板140的第一栅极线GL_1。远像素电路P(5,1)包括第二晶体管251与第二电容252。第二晶体管251的源极电性连接至源极线SL_1。第二晶体管251的漏极电性连接至第二电容252。第二晶体管251的栅极电性连接至显示面板140的第二栅极线GL_5。图2中Ron1表示第一晶体管211的导通电阻,Ct1表示第一电容212的电容值,Ron5表示第二晶体管251的导通电阻,而Ct5表示第二电容252的电容值。
在一些实施例中,第一晶体管211的导通电阻Ron1(近像素电路P(1,1)在开启状态下的源极端的输入阻抗)与第二晶体管251的导通电阻Ron5(远像素电路P(5,1)在开启状态下的源极端的输入阻抗)可以被调整,使得第一晶体管211的导通电阻Ron1大于第二晶体管251的导通电阻Ron5。举例来说(但不限于此),第一晶体管211的信道的宽长比值(例如W1/L1)与第二晶体管251的信道的宽长比值(例如W5/L5)可以被调整,使得第一晶体管211的信道的宽长比值W1/L1小于第二晶体管251的信道的宽长比值W5/L5。其中,W1为第一晶体管211的信道宽,L1为第一晶体管211的信道长,W5为第二晶体管251的信道宽,而L5为第二晶体管251的信道长。第一晶体管211的信道的宽长比值W1/L1小于第二晶体管251的信道的宽长比值W5/L5,意味着第一晶体管211的导通电阻Ron1大于第二晶体管251的导通电阻Ron5。
在另一些实施例中,栅极驱动器120可以提供不同准位的扫描脉冲至栅极线GL_1~GL_m,以使第一晶体管211的导通电阻Ron1大于第二晶体管251的导通电阻Ron5。举例来说(但不限于此),栅极线GL_1的栅极高电压(即扫描脉冲的高电压准位)可以小于栅极线GL_5的栅极高电压,使得第一晶体管211的导通电阻Ron1大于该第二晶体管251的导通电阻Ron5。
在又一些实施例中,第一电容212的电容值Ct1与第二电容252的电容值Ct5可以被调整,使得第一电容212的电容值Ct1大于第二电容252的电容值Ct5。举例来说(但不限于此),第一电容212和/或第二电容252的电极面积(或电极距离)可以被调整,以改变电容值。第一电容212的电容值Ct1大于第二电容252的电容值Ct5,使得近像素电路P(1,1)在开启状态下的源极端的输入阻抗大于远像素电路P(5,1)在开启状态下的源极端的输入阻抗。
理想状况下,本实施例可以调整近像素电路P(1,1)的导通电阻Ron1和/或电容值Ct1,和/或是调整远像素电路P(5,1)的导通电阻Ron5和/或电容值Ct5,使得近像素电路P(1,1)的时间常数RL*CL+Ron1*Ct1可以约等于远像素电路P(5,1)的时间常数15RL*CL+Ron5*Ct5。由于补偿了源极线SL_1于不同位置的阻抗差异,使得源极线SL_1于不同位置的像素电路具有相似的时间常数,进而改善了因为时间常数差异(充电时间差异)所造成显示异常。
图3是依照本发明说明一种显示面板的制造方法的流程示意图。此制造方法包括步骤S310与步骤S320。步骤S310中,提供至少一源极线与多个像素电路于显示面板140。其中,这些像素电路的源极端耦接至源极线,例如图1所示像素电路P(1,1)、P(2,1)、…、P(m,1)的源极端耦接至源极线SL_1。这些像素电路包含一个近像素电路与一个远像素电路,使得近像素电路至源极驱动器130的距离小于远像素电路至源极驱动器130的距离。步骤S320中,调整这些像素电路的源极端的输入阻抗,使得近像素电路在开启状态下的源极端的输入阻抗大于远像素电路在开启状态下的源极端的输入阻抗。
在一些实施例中,该近像素电路包括第一晶体管与第一电容(例如图2所示近像素电路P(1,1)包括第一晶体管211与第一电容212),该远像素电路包括第二晶体管与第二电容(例如图2所示远像素电路P(5,1)包括第二晶体管251与第二电容252)。图3所示步骤S320包括:调增第一晶体管的导通电阻,使得第一晶体管的导通电阻大于第二晶体管的导通电阻。例如,调增图2所示第一晶体管211的导通电阻Ron1,使得第一晶体管211的导通电阻Ron1大于第二晶体管251的导通电阻Ron5。
在一些实施例中,所述调增该第一晶体管的导通电阻的步骤包括:调降第一晶体管的信道的宽长比值,使得第一晶体管的信道的宽长比值小于第二晶体管的信道的宽长比值。
在一些实施例中,该近像素电路包括第一晶体管与第一电容(例如图2所示近像素电路P(1,1)包括第一晶体管211与第一电容212),该远像素电路包括第二晶体管与第二电容(例如图2所示远像素电路P(5,1)包括第二晶体管251与第二电容252)。图3所示步骤S320包括:调增第一电容的电容值,使得第一电容的电容值大于第二电容的电容值。例如,调增图2所示第一电容212的电容值Ct1,使得第一电容212的电容值Ct1大于第二电容252的电容值Ct5。
图4是依照本发明说明一种显示面板的驱动方法的流程示意图。此显示面板可以参照图1与图2所述显示面板140的相关说明。此驱动方法包括步骤S410与步骤S420。步骤S410中,提供第一栅极高电压至第一栅极线,以开启近像素电路。例如,提供第一栅极高电压至图2所示栅极线GL_1,以开启近像素电路P(1,1)。步骤S420中,提供第二栅极高电压至第二栅极线,以开启远像素电路。例如,提供第二栅极高电压至图2所示栅极线GL_5,以开启远像素电路P(5,1)。其中,第一栅极线的第一栅极高电压小于第二栅极线的第二栅极高电压,使得近像素电路在开启状态下的源极端的输入阻抗大于远像素电路在开启状态下的源极端的输入阻抗。
综上所述,本发明实施例所述显示面板中不同像素电路在开启状态下具有不同的输入阻抗。不同位置的像素电路具有不同的输入阻抗,因此可以补偿于同一条源极线不同位置的阻抗差异,进而改善了因为时间常数差异(充电时间差异)所造成显示异常。
虽然本发明已以实施例揭示如上,然其并非用以限定本发明,任何所属技术领域中普通技术人员,在不脱离本发明的精神和范围内,当可作些许的改动与润饰,故本发明的保护范围当视所附权利要求界定范围为准。

Claims (12)

1.一种显示面板,其特征在于,所述显示面板包括:
至少一个源极线;以及
多个像素电路,该些像素电路的源极端耦接至所述源极线,其中该些像素电路包含近像素电路与远像素电路,所述近像素电路至源极驱动器的距离小于所述远像素电路至所述源极驱动器的距离,而在开启状态下所述近像素电路的源极端的输入阻抗大于在开启状态下所述远像素电路的源极端的输入阻抗。
2.根据权利要求1所述的显示面板,其特征在于,所述近像素电路包括第一晶体管与第一电容,所述第一晶体管的源极电性连接至所述源极线,所述第一晶体管的漏极电性连接至所述第一电容,所述远像素电路包括第二晶体管与第二电容,所述第二晶体管的源极电性连接至所述源极线,以及所述第二晶体管的漏极电性连接至所述第二电容。
3.根据权利要求2所述的显示面板,其特征在于,所述第一晶体管的导通电阻大于所述第二晶体管的导通电阻。
4.根据权利要求2所述的显示面板,其特征在于,所述第一晶体管的信道的宽长比值小于所述第二晶体管的信道的宽长比值,使得所述第一晶体管的导通电阻大于所述第二晶体管的导通电阻。
5.根据权利要求2所述的显示面板,其特征在于,所述第一晶体管的栅极电性连接至所述显示面板的第一栅极线,所述第二晶体管的栅极电性连接至所述显示面板的第二栅极线,所述第一栅极线的栅极高电压小于所述第二栅极线的栅极高电压,使得所述第一晶体管的导通电阻大于所述第二晶体管的导通电阻。
6.根据权利要求2所述的显示面板,其特征在于,所述第一电容的电容值大于所述第二电容的电容值。
7.一种显示面板的制造方法,其特征在于,所述制造方法包括:
提供至少一个源极线于所述显示面板;
提供多个像素电路于所述显示面板,其中该些像素电路的源极端耦接至所述源极线,该些像素电路包含近像素电路与远像素电路,所述近像素电路至源极驱动器的距离小于所述远像素电路至所述源极驱动器的距离;以及
调整该些像素电路在开启状态下的源极端的输入阻抗,使得在开启状态下所述近像素电路的源极端的输入阻抗大于在开启状态下所述远像素电路的源极端的输入阻抗。
8.根据权利要求7所述的显示面板的制造方法,其特征在于,所述近像素电路包括第一晶体管与第一电容,所述第一晶体管的源极电性连接至所述源极线,所述第一晶体管的漏极电性连接至所述第一电容,所述远像素电路包括第二晶体管与第二电容,所述第二晶体管的源极电性连接至所述源极线,而所述第二晶体管的漏极电性连接至所述第二电容。
9.根据权利要求8所述的显示面板的制造方法,其特征在于,所述调整该些像素电路的源极端的输入阻抗的步骤包括:
调增所述第一晶体管的导通电阻,使得所述第一晶体管的导通电阻大于所述第二晶体管的导通电阻。
10.根据权利要求8所述的显示面板的制造方法,其特征在于,所述调增所述第一晶体管的导通电阻的步骤包括:
调降所述第一晶体管的信道的宽长比值,使得所述第一晶体管的信道的宽长比值小于所述第二晶体管的信道的宽长比值。
11.根据权利要求8所述的显示面板的制造方法,其特征在于,所述调整该些像素电路的源极端的输入阻抗的步骤包括:
调增所述第一电容的电容值,使得所述第一电容的电容值大于所述第二电容的电容值。
12.一种显示面板的驱动方法,其特征在于,所述显示面板包括至少一个源极线、第一栅极线、第二栅极线与多个像素电路,其中该些像素电路的源极端耦接至所述源极线,该些像素电路包含近像素电路与远像素电路,所述近像素电路至源极驱动器的距离小于所述远像素电路至所述源极驱动器的距离,所述近像素电路的栅极端电性连接至所述第一栅极线,所述远像素电路的栅极端电性连接至所述第二栅极线,所述驱动方法包括:
提供第一栅极高电压至所述第一栅极线,以开启所述近像素电路;以及
提供第二栅极高电压至所述第二栅极线,以开启所述远像素电路,其中所述第一栅极线的所述第一栅极高电压小于所述第二栅极线的所述第二栅极高电压,使得在开启状态下所述近像素电路的源极端的输入阻抗大于在开启状态下所述远像素电路的源极端的输入阻抗。
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