CN106637099A - 用于水下低速航行器的耐腐蚀减阻薄膜及制备方法 - Google Patents
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Abstract
本发明公开了一种用于水下低速航行器的耐腐蚀减阻薄膜及制备方法,本发明的一种用于水下低速航行器的耐腐蚀减阻薄膜,所述用于水下低速航行器的耐腐蚀减阻薄膜包括硬质材料基底(0),所述硬质材料基底(0)由内向外依次为耐腐蚀膜层和疏水减阻膜层,所述耐腐蚀膜层由内向外依次为金属钛层(11)、氮化钛层(12)、氮化铝钛层(13)和氮化锆层(14),所述疏水减阻膜系由内向外依次为氧化硅层(21)、氧化铟锡层(22)和聚四氟乙烯层(23)。本发明具备水下航行阻力小,优秀的耐腐蚀性能、减阻性能,膜系附着力强,且具有较强的硬度,致密表面均匀,生产工艺自主性高。
Description
技术领域
本发明涉及舰桥玻璃薄膜制造技术领域,具体涉及一种用于水下低速航行器的耐腐蚀减阻薄膜及其制备方法。
背景技术
水下兵器、水下探测器等航行器的发展越发重要,可重复使用的水下探测器执行任务过程中,必将面临抗压、耐腐蚀等重要因素,同时,在使用过程中,希望探测距离可以更远,依次来增加任务执行的多样性;水下兵器,虽然可能为一次性使用,但其在使用前一般存储于舰船或潜艇,也面临严重的潮湿、盐雾现象,同时,兵器对航程的需求更重要,一般希望能获得更大的打击范围。因此,对水下兵器、水下探测器而言,应该解决两方面问题,一是面临高湿度、高盐雾含量环境的存储和使用问题,二是水下兵器的航程问题,期望得到更远的航程范围,以提高作战效能或执行任务能力。
目前,缺乏一种水下航行阻力小的用于水下低速航行器的耐腐蚀减阻薄膜及其制备方法。
发明内容
本发明的目的是针对上述问题,提供一种水下航行阻力小的用于水下低速航行器的耐腐蚀减阻薄膜及其制备方法。
为达到上述目的,本发明采用了下列技术方案:本发明的一种用于水下低速航行器的耐腐蚀减阻薄膜,所述用于水下低速航行器的耐腐蚀减阻薄膜包括硬质材料基底,所述硬质材料基底由内向外依次为耐腐蚀膜层和疏水减阻膜层,所述耐腐蚀膜层由内向外依次为金属钛层、氮化钛层、氮化铝钛层和氮化锆层,所述疏水减阻膜系由内向外依次为氧化硅层、氧化铟锡层和聚四氟乙烯层。
进一步地,所述金属钛层的膜层的厚度为10~25nm,所述氮化钛层的膜层的厚度为0.8~1.2μm,所述氮化铝钛层的膜层的厚度为1.0~2.5μm,所述氮化锆层的膜层的厚度为0.6~0.8μm。
进一步地,所述氮化钛层氮含量由内向外逐渐增加;氮化铝钛层氮含量、钛含量由内向外逐渐减少,铝含量逐渐增加;所述氮化锆层氮含量、锆含量由内向外逐渐增加。
更进一步地,所述氧化硅层的膜层的厚度为15~20nm,所述氧化铟锡层的膜层的厚度为25~55nm,所述聚四氟乙烯层的膜层的厚度为45~70nm。
本发明所述的用于水下低速航行器的耐腐蚀减阻薄膜的制备方法,包括如下步骤:
(1)镀膜环境:采用多弧离子镀设备或非平衡磁控溅射设备中的一种或两种的组合,设备置于洁净度十万级以内、湿度小于60%的洁净室内,设备冷却水温度在15~26℃;多弧离子镀时,本底真空<5.0×10-3Pa,磁控溅射时,本底真空<2.5×10-3Pa;
(2)镀耐腐蚀膜层,采用多弧离子镀,硬质材料基底经去离子水、丙酮、酒精、去离子水清洗后,置于星轮基片架上,抽至本底真空后,硬质材料基底加温至180~240℃,采用氩离子清洗,采用偏压电源,偏压-35~-260V,连续沉积金属钛层、氮化钛层、氮化铝钛层和氮化锆层,镀氮化钛时氮气含量由小变大,镀氮化铝钛氮气、钛偏压由大变小,铝偏压由小变大,时氮化锆氮气流量由小变大,锆偏压由小变大;
(3)耐腐蚀膜层镀膜结束后,停止通入氮气,待抽至本底真空后,开启磁控溅射靶材,采用中频电源或射频电源,依次沉积氧化硅层、氧化铟锡层和聚四氟乙烯层,沉积氧化硅层和氧化铟锡层时通入氧气,所述氧气的流量为1~10sccm,采用射频电源沉积聚四氟乙烯层,磁控溅射镀膜过程中真空度保持在1.8~3.5×10-1Pa;
(4)镀膜结束后,通入氩气保压至基片温度降至室温再出片,制得用于水下低速航行器的耐腐蚀减阻薄膜。
进一步地,对步骤(2)中,镀膜过程中,所述基片架公转速度的范围为6~12r/min。
进一步地,对步骤(3)中,镀膜过程中,所述基片架公转速度的范围为1.5~5r/min。
有益效果:本发明具备水下航行阻力小,优秀的耐腐蚀性能、减阻性能,膜系附着力强,且具有较强的硬度,致密表面均匀,生产工艺自主性高。
与现有技术相比,本发明具有如下优点:
(1)以水下兵器和探测器的存储和工作环境为背景,本发明在提高其耐腐蚀能力的基础上,结合氧化物、氮氧化物、聚四氟乙烯等材料,提高了水下航行器的抗划伤、耐摩擦能力,本发明在水下航行器壳体表面综合采用多弧离子镀和磁控溅射两种方法,同时,结合水下航行特点,以降低表面能量为出发点,有效降低水下航行器的航行阻力。
(2)对耐腐蚀层,综合采用氮化钛、氮化铝钛、氮化锆等强耐腐蚀材料,在具备抗腐蚀能力的同时,具有高的硬度,提高了航行器运输适应能力和使用寿命。
(3)采用降低表面能量的办法,可以明显提高水下兵器、探测器的航程,可有效减低航行阻力,低速航行可减低时阻力达12%以上。且选用材料耐腐蚀能力强,硬度高。
(4)针对以上两种问题,有必要首先解决耐腐蚀问题,在水下航行器表面涂覆一层或多层耐腐蚀薄膜,可以明显提高其耐腐蚀能力,增加使用寿命,同时在其完成增加一层或多层耐腐蚀的减阻膜层,通过降低表面能量,达到疏水减阻效果,从而提高航程。同时,有助于提高水下兵器、探测器的存储寿命和使用寿命。
(5)通过综合采用多弧离子镀、磁控溅射技术,在航行器外壁根据合理设计,依次沉积耐腐蚀膜层、疏水减阻膜层,通过各种材料的合理匹配,达到改善航行器表面抗腐蚀的能力,同时减小水下航行时阻力,提高其表面滑移速度。
附图说明
图1为本发明的用于水下低速航行器的耐腐蚀减阻薄膜的示意图;
其中,0硬质材料基底、11氧化硅层、12氮化钛层、13氮化铝钛层、14氮化锆层、21氮化硅层、22氧化硅层、23聚四氟乙烯层。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚,以下将结合附图对本发明的实施方式作进一步地详细描述。
实施例1
如图1所示,本发明的一种用于水下低速航行器的耐腐蚀减阻薄膜,所述用于水下低速航行器的耐腐蚀减阻薄膜包括硬质材料基底0,所述硬质材料基底0由内向外依次为耐腐蚀膜层和疏水减阻膜层,所述耐腐蚀膜层由内向外依次为金属钛层11、氮化钛层12、氮化铝钛层13和氮化锆层14,所述疏水减阻膜系由内向外依次为氧化硅层21、氧化铟锡层22和聚四氟乙烯层23。
所述金属钛层11的膜层的厚度为10nm,所述氮化钛层12的膜层的厚度为1.2μm,所述氮化铝钛层13的膜层的厚度为1.5μm,所述氮化锆层14的膜层的厚度为0.6μm。
所述氮化钛层12氮含量由内向外逐渐增加;氮化铝钛层13氮含量、钛含量由内向外逐渐减少,铝含量逐渐增加;所述氮化锆层14氮含量、锆含量由内向外逐渐增加。
所述氧化硅层21的膜层的厚度为20nm,所述氧化铟锡层22的膜层的厚度为25nm,所述聚四氟乙烯层23的膜层的厚度为70nm。
本发明所述的用于水下低速航行器的耐腐蚀减阻薄膜的制备方法,包括如下步骤:
(1)镀膜环境:采用多弧离子镀设备,设备置于洁净度十万级以内、湿度小于60%的洁净室内,设备冷却水温度在15℃;多弧离子镀时,本底真空<5.0×10-3Pa,磁控溅射时,本底真空<2.5×10-3Pa;
(2)镀耐腐蚀膜层,采用多弧离子镀,硬质材料基底经去离子水、丙酮、酒精、去离子水清洗后,置于星轮基片架上,抽至本底真空后,硬质材料基底加温至180℃,采用氩离子清洗,采用偏压电源,偏压-260V,连续沉积金属钛层、氮化钛层、氮化铝钛层和氮化锆层,镀氮化钛时氮气含量由小变大,镀氮化铝钛氮气、钛偏压由大变小,铝偏压由小变大,时氮化锆氮气流量由小变大,锆偏压由小变大;镀膜过程中,所述基片架公转速度的范围为6r/min。
(3)耐腐蚀膜层镀膜结束后,停止通入氮气,待抽至本底真空后,开启磁控溅射靶材,采用中频电源或射频电源,依次沉积氧化硅层、氧化铟锡层和聚四氟乙烯层,沉积氧化硅层和氧化铟锡层时通入氧气,所述氧气的流量为5sccm,采用射频电源沉积聚四氟乙烯层,磁控溅射镀膜过程中真空度保持在2.5×10-1Pa;镀膜过程中,所述基片架公转速度的范围为1.5r/min。
(4)镀膜结束后,通入氩气保压至基片温度降至室温再出片,制得用于水下低速航行器的耐腐蚀减阻薄膜。
实施例2
实施例2与实施例1的区别在于:
本发明的一种用于水下低速航行器的耐腐蚀减阻薄膜,所述金属钛层11的膜层的厚度为15nm,所述氮化钛层12的膜层的厚度为0.8μm,所述氮化铝钛层13的膜层的厚度为1.0μm,所述氮化锆层14的膜层的厚度为0.7μm。
所述氧化硅层21的膜层的厚度为18nm,所述氧化铟锡层22的膜层的厚度为45nm,所述聚四氟乙烯层23的膜层的厚度为45nm。
本发明所述的用于水下低速航行器的耐腐蚀减阻薄膜的制备方法,包括如下步骤:
在步骤(1)中,镀膜环境:采用多弧离子镀设备和非平衡磁控溅射设备两种的组合,设备置于洁净度十万级以内、湿度小于60%的洁净室内,设备冷却水温度在20℃;多弧离子镀时,本底真空<5.0×10-3Pa,磁控溅射时,本底真空<2.5×10-3Pa;
在步骤(2)中,镀耐腐蚀膜层,采用多弧离子镀,硬质材料基底经去离子水、丙酮、酒精、去离子水清洗后,置于星轮基片架上,抽至本底真空后,硬质材料基底加温至220℃,采用氩离子清洗,采用偏压电源,偏压-35V,连续沉积金属钛层、氮化钛层、氮化铝钛层和氮化锆层;镀膜过程中,所述基片架公转速度的范围为12r/min。
在步骤(3)中,耐腐蚀膜层镀膜结束后,停止通入氮气,待抽至本底真空后,开启磁控溅射靶材,采用中频电源或射频电源,依次沉积氧化硅层、氧化铟锡层和聚四氟乙烯层,沉积氧化硅层和氧化铟锡层时通入氧气,所述氧气的流量为1sccm,采用射频电源沉积聚四氟乙烯层,磁控溅射镀膜过程中真空度保持在1.8×10-1Pa;镀膜过程中,所述基片架公转速度的范围为2.5r/min。
实施例3
实施例3与实施例1的区别在于:本发明的
本发明的一种用于水下低速航行器的耐腐蚀减阻薄膜,所述金属钛层11的膜层的厚度为25nm,所述氮化钛层12的膜层的厚度为0.95μm,所述氮化铝钛层13的膜层的厚度为2.5μm,所述氮化锆层14的膜层的厚度为0.8μm。
所述氧化硅层21的膜层的厚度为15nm,所述氧化铟锡层22的膜层的厚度为55nm,所述聚四氟乙烯层23的膜层的厚度为60nm。
本发明所述的用于水下低速航行器的耐腐蚀减阻薄膜的制备方法,包括如下步骤:
在步骤(1)中,镀膜环境:采用非平衡磁控溅射设备,设备置于洁净度十万级以内、湿度小于60%的洁净室内,设备冷却水温度在26℃;多弧离子镀时,本底真空<5.0×10-3Pa,磁控溅射时,本底真空<2.5×10-3Pa;
在步骤(2)中,镀耐腐蚀膜层,采用多弧离子镀,硬质材料基底经去离子水、丙酮、酒精、去离子水清洗后,置于星轮基片架上,抽至本底真空后,硬质材料基底加温至240℃,采用氩离子清洗,采用偏压电源,偏压-160V,连续沉积金属钛层、氮化钛层、氮化铝钛层和氮化锆层;镀膜过程中,所述基片架公转速度的范围为8r/min。
在步骤(3)中,耐腐蚀膜层镀膜结束后,停止通入氮气,待抽至本底真空后,开启磁控溅射靶材,采用中频电源或射频电源,依次沉积氧化硅层、氧化铟锡层和聚四氟乙烯层,沉积氧化硅层和氧化铟锡层时通入氧气,所述氧气的流量为10sccm,采用射频电源沉积聚四氟乙烯层,磁控溅射镀膜过程中真空度保持在3.5×10-1Pa;镀膜过程中,所述基片架公转速度的范围为5r/min。
尽管本文较多地使用了硬质材料基底0、氧化硅层11、氮化钛层12、氮化铝钛层13、氮化锆层14、氮化硅层21、氧化硅层22、聚四氟乙烯层23等等术语,但并不排除使用其它术语的可能性。使用这些术语仅仅是为了更方便地描述和解释本发明的本质;把它们解释成任何一种附加的限制都是与本发明精神相违背的。
本文中所描述的具体实施例仅仅是对本发明精神作举例说明。本发明所属技术领域的技术人员可以对所描述的具体实施例做各种各样的修改或补充或采用类似的方式替代,但并不会偏离本发明的精神或者超越所附权利要求书所定义的范围。
Claims (7)
1.一种用于水下低速航行器的耐腐蚀减阻薄膜,其特征在于:所述用于水下低速航行器的耐腐蚀减阻薄膜包括硬质材料基底(0),所述硬质材料基底(0)由内向外依次为耐腐蚀膜层和疏水减阻膜层,所述耐腐蚀膜层由内向外依次为金属钛层(11)、氮化钛层(12)、氮化铝钛层(13)和氮化锆层(14),所述疏水减阻膜系由内向外依次为氧化硅层(21)、氧化铟锡层(22)和聚四氟乙烯层(23)。
2.根据权利要求1所述的用于水下低速航行器的耐腐蚀减阻薄膜,其特征在于:所述金属钛层(11)的膜层的厚度为10~25nm,所述氮化钛层(12)的膜层的厚度为0.8~1.2μm,所述氮化铝钛层(13)的膜层的厚度为1.0~2.5μm,所述氮化锆层(14)的膜层的厚度为0.6~0.8μm。
3.根据权利要求1所述的用于水下低速航行器的耐腐蚀减阻薄膜,其特征在于:所述氮化钛层(12)氮含量由内向外逐渐增加;氮化铝钛层(13)氮含量、钛含量由内向外逐渐减少,铝含量逐渐增加;所述氮化锆层(14)氮含量、锆含量由内向外逐渐增加。
4.根据权利要求1所述的用于水下低速航行器的耐腐蚀减阻薄膜,其特征在于:所述氧化硅层(21)的膜层的厚度为15~20nm,所述氧化铟锡层(22)的膜层的厚度为25~55nm,所述聚四氟乙烯层(23)的膜层的厚度为45~70nm。
5.权利要求1至4任一项所述的用于水下低速航行器的耐腐蚀减阻薄膜的制备方法,其特征在于包括如下步骤:
(1)镀膜环境:采用多弧离子镀设备或非平衡磁控溅射设备中的一种或两种的组合,设备置于洁净度十万级以内、湿度小于60%的洁净室内,设备冷却水温度在15~26℃;多弧离子镀时,本底真空<5.0×10-3Pa,磁控溅射时,本底真空<2.5×10-3Pa;
(2)镀耐腐蚀膜层,采用多弧离子镀,硬质材料基底经去离子水、丙酮、酒精、去离子水清洗后,置于星轮基片架上,抽至本底真空后,硬质材料基底加温至180~240℃,采用氩离子清洗,采用偏压电源,偏压-35~-260V,连续沉积金属钛层、氮化钛层、氮化铝钛层和氮化锆层,镀氮化钛时氮气含量由小变大,镀氮化铝钛氮气、钛偏压由大变小,铝偏压由小变大,时氮化锆氮气流量由小变大,锆偏压由小变大;
(3)耐腐蚀膜层镀膜结束后,停止通入氮气,待抽至本底真空后,开启磁控溅射靶材,采用中频电源或射频电源,依次沉积氧化硅层、氧化铟锡层和聚四氟乙烯层,沉积氧化硅层和氧化铟锡层时通入氧气,所述氧气的流量为1~10sccm,采用射频电源沉积聚四氟乙烯层,磁控溅射镀膜过程中真空度保持在1.8~3.5×10-1Pa;
(4)镀膜结束后,通入氩气保压至基片温度降至室温再出片,制得用于水下低速航行器的耐腐蚀减阻薄膜。
6.根据权利要求5所述的用于水下低速航行器的耐腐蚀减阻薄膜的制备方法,其特征在于:对步骤(2)中,镀膜过程中,所述基片架公转速度的范围为6~12r/min。
7.根据权利要求5所述的用于水下低速航行器的耐腐蚀减阻薄膜的制备方法,其特征在于:对步骤(3)中,镀膜过程中,所述基片架公转速度的范围为1.5~5r/min。
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