TW201323637A - 殼體及其製備方法 - Google Patents

殼體及其製備方法 Download PDF

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TW201323637A
TW201323637A TW100147225A TW100147225A TW201323637A TW 201323637 A TW201323637 A TW 201323637A TW 100147225 A TW100147225 A TW 100147225A TW 100147225 A TW100147225 A TW 100147225A TW 201323637 A TW201323637 A TW 201323637A
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layer
casing
substrate
chromium
hydrophobic
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Da-Hua Cao
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Fih Hong Kong Ltd
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Abstract

本發明提供一種殼體，其包括基體、形成於基體表面打底層、形成於打底層表面的中間層及形成於中間層表面的疏水層，該打底層為金屬鉻層，該中間層為碳化鉻層，該疏水層為含氟碳氫的高分子層。所述膜層使所述殼體具有良好的耐磨性、耐腐蝕性，可有效保護基體，相應延長殼體的使用壽命；最表面的疏水層具有良好的疏水性，可提高殼體的抗污性能。此外，本發明還提供一種上述殼體的製備方法。

Description

殼體及其製備方法
本發明涉及一種殼體及該殼體的製備方法，特別涉及一種具有疏水效果的殼體及該殼體的製備方法。
浸潤性是固體表面的重要性質之一。疏水表面是指固體表面與水的接觸角大於90°的表面。近年來，疏水表面在日常生活和工業領域有著越來越重要的應用價值。然，目前採用物理氣相沉積(PVD)技術製備的膜層，膜層疏水效果不佳，表面容易黏覆髒污及手印，嚴重影響PVD鍍膜產品的進一步應用。
有鑒於此，有必要提供一種具有良好疏水性的殼體。
另外，還有必要提供一種上述殼體的製備方法。
一種殼體，其包括基體、形成於基體表面的打底層、形成於打底層表面的中間層及形成於中間層表面的疏水層，該打底層為金屬鉻層，該中間層為碳化鉻層，該疏水層為含氟碳氫的高分子層。
一種殼體的製備方法，其包括如下步驟：
提供一基體；
在基體表面形成打底層，該打底層為金屬鉻層；
在該打底層表面形成中間層，該中間層為碳化鉻層；
在該中間層的表面形成疏水層，該疏水層為含氟碳氫的高分子層。
本發明所述殼體藉由在基體表面依次形成打底層、中間層及疏水層，膜層之間過渡良好，附著牢固；且所述膜層使所述殼體具有良好的耐磨性、耐腐蝕性，可有效保護基體，相應延長殼體的使用壽命；最表面的疏水層具有良好的疏水性，可提高殼體的抗污性能；此外，所鍍膜層還使所述殼體呈現銀白色外觀。
請參閱圖1，本發明一較佳實施方式的殼體10包括基體11、形成於基體11表面的打底層13、形成於打底層13表面的中間層15及形成於中間層15表面的疏水層17。
該基體11的材質可為不銹鋼。
該打底層13為金屬鉻(Cr)層，其厚度為0.05-0.2μm。
該中間層15為碳化鉻(CrC)層，其厚度為1.5-2.0μm。該中間層15緻密、耐磨性好，且呈現銀白色。
該疏水層17為含氟碳氫(F-C-H)的高分子層，其厚度為0.2-0.5μm。該疏水層17具有良好的疏水功能，其與水的接觸角可達108-120°，可使殼體10具有良好的抗污性能。此外，該疏水層17為透明的，可使所述殼體10呈現中間層15的銀白色外觀。此外該疏水層17還具有良好的耐磨性和耐腐蝕性。
該殼體10藉由在基體11表面依次形成含鉻的打底層13、含鉻且硬度較高的中間層15、含碳且硬度較高的疏水層17，膜層之間過渡良好，附著牢固；且所述膜層使所述殼體10具有良好的耐磨性、耐腐蝕性、抗污性。
本發明一較佳實施方式的殼體10的製備方法，其包括以下步驟：
提供一基體11，該基體11的材質可為不銹鋼。
將基體11進行常規的拋光和清洗，以除去基體11表面的髒污和雜質。
結合參閱圖2，提供一真空鍍膜機30，該真空鍍膜機30包括一鍍膜室31、連接於鍍膜室31的真空泵32、氣源通道33、離子源室34、以及與鍍膜室31及離子源室34相通的離子源通道35。真空泵32用以對鍍膜室31抽真空。該鍍膜室31內安裝有轉架37和至少一個鉻靶38、至少二個聚四氟乙烯靶39。轉架37帶動基體11做圓周轉動，且基體11在隨轉架37轉動的同時亦自轉。鍍膜時，濺射氣體與反應氣體經由氣源通道33進入鍍膜室31，由離子源室34產生的離子束經過離子源通道35進入鍍膜室31內。
採用磁控濺射法在經清洗後的基體11上濺鍍一打底層13，該打底層13為金屬鉻(Cr)層。濺鍍該打底層13在所述真空鍍膜機30中進行。濺鍍時藉由氣源通道33向鍍膜室31內通入工作氣體氬氣，氬氣流量可為180-250毫升/分(sccm)，開啟鉻靶38，並設定鉻靶38的功率為13-18kw，對基體11施加-150V的偏壓，並加熱所述鍍膜室31至溫度為110-180℃，鍍膜時間可為8-15min。該打底層13的厚度可為0.05-0.2μm。
繼續採用磁控濺射法在打底層13表面濺鍍一中間層15，該中間層15為碳化鉻(CrC)層。濺鍍時藉由氣源通道33向鍍膜室31內通入工作氣體氬氣和反應氣體乙炔，氬氣流量可為180-250sccm，乙炔流量可為60-90sccm，開啟鉻靶38，並設定鉻靶38的功率為14-19kw，對基體11施加-100V的偏壓，保持所述鍍膜室31的溫度為110-180℃，鍍膜時間可為80-120min。該中間層15的厚度可為1.5-2.0μm。
採用離子束濺射法在中間層15表面濺鍍一疏水層17，該疏水層17為氟碳氫高分子層。向離子源室34內通入氬氣使其離化成氬離子，氬離子經離子源通道35進入鍍膜室31內對聚四氟乙烯靶39進行轟擊使聚四氟乙烯靶材原子脫離聚四氟乙烯靶39沉積於中間層15上，氬離子的濺射能量為1.0-1.5keV，濺射離子流為30-40mA，其中低能離子束能量為100-300eV，中能離子束能量為500-750eV，濺鍍時對基體11施加-50V的偏壓。由於聚四氟乙烯靶39為有機靶材，耐溫性能較金屬低，因此，該鍍膜室31內的至少二聚四氟乙烯靶39採用每次一個靶材工作，且靶材交替工作的方式。該疏水層17的厚度可為0.2-0.5μm。
下面藉由實施例來對本發明進行具體說明。
實施例1
本實施例所使用的真空鍍膜機30為中頻磁控濺射鍍膜機。
本實施例所使用的基體11為不銹鋼304。
濺鍍打底層13：鉻靶38的功率為15kw，氬氣流量為220sccm，對基體11施加-150V的偏壓，並加熱所述鍍膜室31至溫度為130℃，鍍膜時間為10min。該打底層13的厚度為0.1μm。
濺鍍中間層15：鉻靶38的功率為16kw，氬氣流量為220sccm，乙炔流量為60sccm，對基體11施加-100V的偏壓，保持所述鍍膜室31的溫度為130℃，鍍膜時間為80min。該中間層15的厚度為1.6μm。
濺鍍疏水層17：氬離子的濺射能量為1.5keV，濺射離子流為30-40mA，其中低能離子束能量為100-300eV，中能離子束能量為500-750eV，濺鍍時對基體11施加-50V的偏壓。該疏水層17的厚度可為0.3μm。
經測試，實施例1所製得殼體10表面的接觸角為115°。
實施例2
本實施例所使用的真空鍍膜機30與實施例1中的相同。
本實施例所使用的基體11為不銹鋼304。
濺鍍打底層13：鉻靶38的功率為16kw，氬氣流量為200sccm，對基體11施加-150V的偏壓，並加熱所述鍍膜室31至溫度為140℃，鍍膜時間為15min。該打底層13的厚度為0.15μm。
濺鍍中間層15：鉻靶38的功率為17kw，氬氣流量為200sccm，乙炔流量為80sccm，對基體11施加-100V的偏壓，保持所述鍍膜室31的溫度為140℃，鍍膜時間為90min。該中間層15的厚度為1.8μm。
濺鍍疏水層17：氬離子的濺射能量為1.4keV，濺射離子流為34-38mA，其中低能離子束能量為100-300eV，中能離子束能量為500-750eV，濺鍍時對基體11施加-50V的偏壓。該疏水層17的厚度可為0.4μm。
經測試，實施例2所製得殼體10表面的接觸角為118-120°。
實施例3
本實施例所使用的真空鍍膜機30與實施例1中的相同。
本實施例所使用的基體11為不銹鋼304。
濺鍍打底層13：鉻靶38的功率為17kw，氬氣流量為220sccm，對基體11施加-150V的偏壓，並加熱所述鍍膜室31至溫度為150℃，鍍膜時間為8min。該打底層13的厚度為0.1μm。
濺鍍中間層15：鉻靶38的功率為18kw，氬氣流量為220sccm，乙炔流量為90sccm，對基體11施加-100V的偏壓，保持所述鍍膜室31的溫度為150℃，鍍膜時間為100min。該中間層15的厚度為2.0μm。
濺鍍疏水層17：氬離子的濺射能量為1.5keV，濺射離子流為38-40mA，其中低能離子束能量為100-300eV，中能離子束能量為500-750eV，濺鍍時對基體11施加-50V的偏壓。該疏水層17的厚度可為0.5μm。
經測試，實施例3所製得殼體10表面的接觸角為120°。
本發明所述殼體10藉由在基體11表面依次形成打底層13、中間層15及疏水層17，膜層之間過渡良好，附著牢固；且所述膜層使所述殼體10具有良好的耐磨性、耐腐蝕性，可有效保護基體11，相應延長殼體10的使用壽命；最表面的疏水層具有良好的疏水性，可提高殼體10的抗污性能；此外，所鍍膜層還使所述殼體呈現銀白色外觀。
10．．．殼體
11．．．基體
13．．．打底層
15．．．中間層
17．．．疏水層
30．．．真空鍍膜機
31．．．鍍膜室
32．．．真空泵
33．．．氣源通道
34．．．離子源室
35．．．離子源通道
37．．．轉架
38．．．鉻靶
39．．．聚四氟乙烯靶
圖1為本發明一較佳實施例殼體的剖視圖；
圖2為本發明一較佳實施例真空鍍膜機的示意圖。
10．．．殼體
11．．．基體
13．．．打底層
15．．．中間層
17．．．疏水層

Claims (10)

  1. 一種殼體，其包括基體、形成於基體表面的打底層，其改良在於：該殼體還包括形成於打底層表面的中間層及形成於中間層表面的疏水層，該打底層為金屬鉻層，該中間層為碳化鉻層，該疏水層為含氟碳氫的高分子層。
  2. 如申請專利範圍第1項所述之殼體，其中該打底層的厚度為0.05-0.2μm。
  3. 如申請專利範圍第1項所述之殼體，其中該中間層的厚度為1.5-2.0μm。
  4. 如申請專利範圍第1項所述之殼體，其中該疏水層的厚度為0.2-0.5μm。
  5. 如申請專利範圍第1項所述之殼體，其中該基體的材質為不銹鋼。
  6. 如申請專利範圍第1項所述之殼體，其中該疏水層為透明的疏水層。
  7. 一種殼體的製備方法，其包括如下步驟：
    提供一基體；
    在基體表面形成打底層，該打底層為金屬鉻層；
    在該打底層表面形成中間層，該中間層為碳化鉻層；
    在該中間層的表面形成疏水層，該疏水層為含氟碳氫的高分子層。
  8. 如申請專利範圍第7項所述之殼體的製備方法，其中所述打底層的形成採用磁控濺射法，使用鉻靶，設定鉻靶的功率為13-18kw，以氬氣為工作氣體，氬氣流量為180-250sccm，對基體施加的偏壓為-150V，鍍膜溫度為110-180℃，鍍膜時間為8-15min。
  9. 如申請專利範圍第7項所述之殼體的製備方法，其中所述中間層的形成採用磁控濺射法，使用鉻靶，設定鉻靶的功率為14-19kw，以氬氣為工作氣體，氬氣流量為180-250sccm，以乙炔為反應氣體，乙炔流量為60-90sccm，對基體施加的偏壓為-100V，鍍膜溫度為110-180℃，鍍膜時間為80-120min。
  10. 如申請專利範圍第7項所述之殼體的製備方法，其中所述疏水層的形成採用離子束濺射法，使用聚四氟乙烯靶，使用氬離子對聚四氟乙烯靶進行濺射，氬離子的濺射能量為1.0-1.5keV，濺射離子流為30-40mA，其中低能離子束能量為100-300eV，中能離子束能量為500-750eV，對基體施加的偏壓為-50V。
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