CN106602216A - A preparation method of reconstructing a holographic antenna on the basis of SiGe base heterojunction frequency - Google Patents
A preparation method of reconstructing a holographic antenna on the basis of SiGe base heterojunction frequency Download PDFInfo
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- 229910000577 Silicon-germanium Inorganic materials 0.000 title claims abstract description 95
- 238000002360 preparation method Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 21
- 238000005516 engineering process Methods 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 43
- 238000001259 photo etching Methods 0.000 claims description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 18
- 229920005591 polysilicon Polymers 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 239000011241 protective layer Substances 0.000 claims description 15
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- 239000012535 impurity Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 8
- 239000003292 glue Substances 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 238000001459 lithography Methods 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
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- 230000008520 organization Effects 0.000 abstract 1
- 239000007787 solid Substances 0.000 description 8
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- 238000005530 etching Methods 0.000 description 7
- 238000001093 holography Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
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- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
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- 230000015556 catabolic process Effects 0.000 description 2
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- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
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- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
- H01Q5/30—Arrangements for providing operation on different wavebands
- H01Q5/307—Individual or coupled radiating elements, each element being fed in an unspecified way
- H01Q5/314—Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors
- H01Q5/321—Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors within a radiating element or between connected radiating elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
Abstract
The invention relates to a preparation method of reconstructing a holographic antenna on the basis of SiGe base heterojunction frequency. The method includes the following steps: manufacturing multiple SiGe base heterojunction SPiN diodes on a SiGeOI substrate according to the structure of a holographic antenna, wherein P zones of the SiGe base heterojunction SPiN diodes are made from Si materials, i zones of the SiGe base heterojunction SPiN diodes are made from SiGe materials, and N zones of the SiGe base heterojunction SPiN diodes are made from Si materials; connecting the SiGe base heterojunction SPiN diodes with a PAD in sequence to form multiple SiGe base heterojunction SPiN diodes strings; adopting a semiconductor technology to make DC bias lines between the SiGe base heterojunction SPiN diodes strings and a DC bias power source so that the SiGe base heterojunction SPiN diodes strings are connected to the SiGe base heterojunction SPiN diodes strings; making a coaxial feed line to be connected with a first antenna arm and a second antenna arm, and finally forming the holographic antenna. The holographic antenna prepared by the method is small in size and simple in structure, is easy to process, has no complicated feed source structure, can be quickly hopped in frequency, stays in an electromagnetic wave hidden state when being shut down, is easy for array organization, and can be used as a basic forming unit of a phased array antenna.
Description
Technical field
The invention belongs to technical field of semiconductors, and in particular to one kind is based on SiGe base heterojunctions frequency reconfigurable holography day
The preparation method of line.
Background technology
The concept of reconfigurable antenna is set forth in the sixties in 20th century.Restructural is referred in multi-antenna array between each array element
Relation can be according to actual conditions flexibility and changeability, it is and revocable.It mainly by adjusting state variable device, is realized
The restructural of antenna performance.It is (many with realization including broadband is realized that reconfigurable antenna can be divided into frequency reconfigurable antenna by function
Frequency band), directional diagram reconstructable aerial, polarization reconfigurable antenna and many electromagnetic parameter reconfigurable antennas.By changing restructural day
The structure of line can make one or more in many kinds of parameters such as frequency, lobe pattern, the polarization mode of antenna realize reconstruct, because of it
Have the advantages that small volume, function are more, be easily achieved diversity application, have become study hotspot.
Holographic antenna is made up of source antenna and holographic structure.With reference to actual demand, appropriate antenna is selected as source antenna,
Change the radiation of feed by loading holographic structure, with the radiation characteristic of the target antenna needed for obtaining, by the electricity for giving
The interference pattern of electromagnetic wave radiation further calculates antenna structure.Compared with traditional reflector antenna, holographic structure has flexible structure
Form is built, is easy to and applied environment Integral design, be of wide application general.
Therefore, high performance frequency reconfigurable holographic antenna how is made, is made especially with semiconductor technology
Make, just become very meaningful.
The content of the invention
In order to solve the above-mentioned problems in the prior art, the invention provides a kind of be based on SiGe base heterojunction frequencies
The preparation method of restructural holographic antenna.The technical problem to be solved in the present invention is achieved through the following technical solutions：
The embodiment provides a kind of preparation method based on SiGe base heterojunction frequency reconfigurable holographic antennas,
Wherein, the holographic antenna includes SiGeOI materials, first antenna arm, the second antenna arm, coaxial feeder, direct current biasing line and complete
Breath annulus；Wherein, the preparation method includes：
According to the multiple poles of SiGe base heterojunctions SPiN bis- of structure fabrication of the holographic antenna on the SiGeOI substrates
Pipe, and the P areas of the SiGe base heterojunctions SPiN diodes adopt Si materials using Si materials, i areas using sige material and N areas
Material；
Multiple SiGe base heterojunctions SPiN diodes are sequentially interconnected in PAD to form multiple SiGe base heterojunctions SPiN
Diode string；
Make straight using semiconductor technology between the SiGe base heterojunctions SPiN diodes string and DC bias supplies
Flow offset line to realize the connection of the SiGe base heterojunctions SPiN diodes string and DC bias supplies；
The coaxial feeder is made to connect the first antenna arm and second antenna arm, the holography is ultimately formed
Antenna.
In one embodiment of the invention, it is many according to the structure fabrication of the holographic antenna on the SiGeOI substrates
Individual SiGe base heterojunctions SPiN diodes, including：
A () is on the SiGeOI substrates according to the first antenna arm, second antenna arm, the holographic annulus
The active zone position of the heterogeneous base of SiGe bases described in structure determination, and isolated area is set at the active zone position；
B () etches the SiGeOI substrates at the active zone position and forms p-type groove and N-type groove；
C () fills described p-type groove and the N-type groove, and using ion implantation technology in the p-type groove and described
P-type active area and N-type active area are formed at N-type grooved position；And
D () makes lead to form multiple SiGe base heterojunctions SPiN diodes on the SiGeOI substrates.
In one embodiment of the invention, in step (a), isolated area is set at the active zone position, including：
(a1) the first protective layer is formed in the SiGeOI substrate surfaces；
(a2) the first isolated area figure is formed on first protective layer using photoetching process；
(a3) the specified location etching described first using dry etch process in the first isolated area figure is protected
Layer and the SiGeOI substrates are to form isolation channel, and the depth of the isolation channel is more than or equal to the top layer of the SiGeOI substrates
The thickness of Ge；
(a4) isolation channel is filled to form the isolated area.
In one embodiment of the invention, step (b) includes：
(b1) the second protective layer is formed in the SiGeOI substrate surfaces；
(b2) the second isolated area figure is formed on second protective layer using photoetching process；
(b3) the specified location etching described second using dry etch process in the second isolated area figure is protected
Layer and the SiGeOI substrates are forming the p-type groove and the N-type groove.
In one embodiment of the invention, before step (c), also include：
(x1) the p-type groove and the N-type groove are aoxidized so that the inwall shape of the p-type groove and the N-type groove
Into oxide layer；
(x2) using wet-etching technology the oxide layer of the p-type groove and the N-type trench wall is etched to complete
State the planarizing of p-type groove and the N-type trench wall.
In one embodiment of the invention, step (c), including：
(c1) the p-type groove and the N-type groove are filled using polysilicon；
(c2) after SiGeOI substrates described in planarizing process, on the SiGeOI substrates polysilicon layer is formed；
(c3) polysilicon layer described in photoetching, and using the method with glue ion implanting to the p-type groove and the N-type ditch
Groove position is injected separately into p type impurity and N-type impurity to form the p-type active area and the N-type active area and while shape
Into p-type contact zone and N-type contact zone；
(c4) photoresist is removed.
In one embodiment of the invention, step (d) includes：
(d1) silica is generated on the SiGeOI substrates；
(d2) impurity in the p-type active area and N-type active area is activated using annealing process；
(d3) in the p-type active area and the N-type surfaces of active regions lithography fair lead forming lead；
(d4) Passivation Treatment and photoetching PAD are forming multiple SiGe base heterojunctions SPiN diodes.
In one embodiment of the invention, the SiGe base heterojunctions SPiN diodes string and DC bias supplies it
Between using semiconductor technology make direct current biasing line, including：
Using CVD techniques, prepare between the SiGe base heterojunctions SPiN diodes string and DC bias supplies and formed
The direct current biasing line, the direct current biasing line is prepared using copper, aluminium or highly doped polysilicon.
In one embodiment of the invention, the coaxial feeder is made, including：
The internal core wire of the coaxial feeder is connected to into the metal contact piece of the first antenna arm and by the coaxial feeder
Outer conductor be connected to the metal contact piece of second antenna arm.
In one embodiment of the invention, the holographic annulus is by the isometric SPiN diodes string arrangement of multistage
The regular polygon structure of formation, wherein, the length of side of the regular polygon and the first antenna arm and the second antenna brachium
Degree sum is identical, or the radius of the circumscribed circle of the regular polygon is the electromagnetic wavelength that the holographic antenna is received or sent
3/4ths.
Compared with prior art, beneficial effects of the present invention：
1st, the injection efficiency of diode can be effectively improved as elementary cell using SiGe base heterojunction SPiN diodes
And electric current, so as to improve the frequency characteristic of antenna.
2nd, only it need to be turned on or off by control as the basic component units of antenna using SPiN diodes, you can
Realize the restructural of frequency.
3rd, using coaxial cable as feed, without complicated feed structure.
4th, all constituents are in semiconductor chip side, it is easy to plate-making processing.
Description of the drawings
Fig. 1 is that a kind of structure of frequency reconfigurable holographic antenna heterogeneous based on SiGe bases provided in an embodiment of the present invention is shown
It is intended to；
Fig. 2 is a kind of preparation side based on SiGe base heterojunction frequency reconfigurable holographic antennas provided in an embodiment of the present invention
Method schematic diagram；
Fig. 3 is a kind of preparation method schematic diagram of SiGe base heterojunctions SPiN diodes provided in an embodiment of the present invention；
Fig. 4 is a kind of structural representation of SiGe base heterojunctions SPiN diodes provided in an embodiment of the present invention；
Fig. 5 is a kind of structural representation of SiGe base heterojunctions SPiN diode strings provided in an embodiment of the present invention；And
Fig. 6 a- Fig. 6 r are a kind of preparation method schematic diagram of SiGe base heterojunctions SPiN diodes of the embodiment of the present invention.
Specific embodiment
Further detailed description is done to the present invention with reference to specific embodiment, but embodiments of the present invention are not limited to
This.
Embodiment one
Fig. 1 is referred to, Fig. 1 is a kind of frequency reconfigurable holography day heterogeneous based on SiGe bases provided in an embodiment of the present invention
The structural representation of line.The antenna includes that SiGeOI substrates 1, first antenna arm 2, the second antenna arm 3, coaxial feeder 4, direct current are inclined
Put line 5,6,7,8,9,10,11,12, holographic annulus 14；Wherein, the antenna arm 3 of first antenna arm 2 and second includes being distributed in coaxially
The both sides of feeder line 4 and isometric SiGe base heterojunction SPiN diode strings, holographic annulus 14 includes multiple SiGe base heterojunctions SPiN
Diode string w7.
Wherein, holographic annulus 14 is by eight sections of isometric SiGe base heterojunction SPiN diode string arrangement form octagons
Structure, wherein, the length of side of octagon is identical with the length sum of 2 and second antenna arm of first antenna arm 3.Or holographic annulus
(14) it is to be constituted and formed regular polygon structure by multiple isometric SiGe base heterojunction SPiN diode strings, outside regular polygon
Connect 3/4ths of the electromagnetic wavelength that round radius is antenna reception or transmission.
The SiGe base heterojunction SPiN diode string numbers that first antenna arm 2 includes and the SiGe that the second antenna arm 3 includes
Base heterojunction SPiN diode string numbers are identical, and the diode string of the diode string of first antenna arm 2 and the second antenna arm 3 is with same
Feeder shaft 4 carry out for symmetry axis it is symmetrical, arbitrary SiGe base heterojunctions SPiN diodes string of first antenna arm 2 and with this
The corresponding SiGe base heterojunctions SPiN diode string length phases of the second symmetrical antenna arm 3 of SiGe base heterojunction SPiN diode strings
Deng.
Wherein, the intermittent of direct current biasing line 5,6,7,8,9,10,11,12 is electrically connected to the poles of SiGe base heterojunctions SPiN bis-
Pipe string w1, w2, w3, w4, w5, w6 two ends.Between any two sections of SiGe base heterojunctions SPiN diode strings of first antenna arm 2
The end of junction and outermost SPiN diode string is connected respectively with one end of direct current biasing line 7,8,9, direct current biasing line
7th, 8,9 other end can switch between positive voltage attached state or vacant state；The most inner side SiGe of first antenna arm 2
Base heterojunction SPiN diodes string is connected near one end of coaxial feeder 4 with one end of direct current biasing line 5, the direct current biasing line 5
The other end be connected with negative voltage；Combination between any two sections of SiGe base heterojunctions SPiN diode strings of the second antenna arm 3
The end of place and outermost SiGe base heterojunction SPiN diode strings is connected respectively with one end of direct current biasing line 10,11,12,
The other end of direct current biasing line 10,11,12 can switch between positive voltage attached state or vacant state；Second antenna
The most inner side SiGe base heterojunction SPiN diodes strings of arm 3 are connected near one end of coaxial feeder 4 with one end of direct current biasing line 6,
The other end of the direct current biasing line 6 is connected with negative voltage；Constitute multiple SiGe base heterojunctions SPiN diodes of holographic annulus 14
The two ends of string w7 are respectively connected by direct current biasing line with positive voltage and negative voltage.
Operationally, only direct current biasing line 7,12 is connected with positive source, or, only direct current biasing line 8,11 and power supply be just
Extremely it is connected, or, only direct current biasing line 9,10 is connected with positive source, to realize the day of the antenna arm 3 of first antenna arm 2 and second
The conducting length of line arm is consistent.
Further, in antenna provided in an embodiment of the present invention, first antenna arm 2, the second antenna arm 3, holographic annulus
14 and direct current biasing line 5,6,7,8,9,10,11,12 be made on semiconductor chip 1 using semiconductor technology, direct current biasing line
5th, 6,7,8,9,10,11,12 are used to apply direct current biasing, the inner core of coaxial feeder 4 to SiGe base heterojunction SPiN diodes string
Line and outer conductor (screen layer) are respectively welded on the metal contact piece of antenna arm and pad is connected to respectively direct current biasing line at two
5th, 6 used as public negative pole；SPiN diodes join end to end constitute SPiN diode strings, in the present embodiment, the poles of SPiN bis- successively
Pipe first antenna arm 2, the second antenna arm 3 are constituted by three sections of SPiN diodes strings, and each SPiN diode string has direct current
Offset line external voltage positive pole, wherein antenna arm can be made up of multistage diode string, and the antenna arm in the present embodiment is by three section two
Pole pipe string composition is a kind of example, and the hop count of concrete required diode should be determined by actually required working frequency range.
Fig. 2 is referred to, Fig. 2 is provided in an embodiment of the present invention a kind of based on SiGe base heterojunctions frequency reconfigurable holography day
The preparation method schematic diagram of line.The preparation method of the antenna can include：
According to the multiple poles of SiGe base heterojunctions SPiN bis- of structure fabrication of the holographic antenna on the SiGeOI substrates
Pipe, and the P areas of the SiGe base heterojunctions SPiN diodes adopt Si materials using Si materials, i areas using sige material and N areas
Material；
Multiple SiGe base heterojunctions SPiN diodes are sequentially interconnected in PAD to form multiple SiGe base heterojunctions SPiN
Diode string；
Make straight using semiconductor technology between the SiGe base heterojunctions SPiN diodes string and DC bias supplies
Flow offset line to realize the connection of the SiGe base heterojunctions SPiN diodes string and DC bias supplies；
The coaxial feeder is made to connect the first antenna arm and second antenna arm, the holography is ultimately formed
Antenna.
Wherein, using SiGeOI substrates the reason for, is, for solid plasma antenna is due to the good microwave of its needs
Characteristic, and solid plasma pin diode is in order to meet this demand, needs to have good isolation characteristic and carrier is i.e. solid
The restriction ability of state plasma, and SiGeOI substrates due to its have can with isolation channel be conveniently formed pin area of isolation,
Carrier also can be that solid state plasma is limited in top layer Si Ge by silica (SiO2), it is advantageous to using SiGeOI
As the substrate of solid plasma pin diode.And the carrier mobility of sige material can improve device performance than larger.
Wherein, semiconductor technology system is adopted between the SiGe base heterojunctions SPiN diodes string and DC bias supplies
Make direct current biasing line, can include：
Using CVD techniques, prepare between the SiGe base heterojunctions SPiN diodes string and DC bias supplies and formed
The direct current biasing line, the direct current biasing line is prepared using copper, aluminium or highly doped polysilicon.
Alternatively, the coaxial feeder is made, can be included：
The internal core wire of the coaxial feeder is connected to into the metal contact piece of the first antenna arm and by the coaxial feeder
Outer conductor be connected to the metal contact piece of second antenna arm.
It should be noted that above-mentioned steps not have specific production order, can be according to reality in actually preparing
Situation is adjusted, and is not limited herein.
In the present embodiment, the first antenna arm 2 for example includes three sections of SPiN diode string w1, w2, w3.Described second day
Line arm 3 for example includes three sections of SPiN diode string w4, w5, w6.And the SPiN diodes string w1 and the SPiN diodes string
The equal length of the equal length of w6, the SPiN diodes string w2 and the SPiN diodes string w5, the SPiN diodes
The equal length of the string w3 and SPiN diodes string w4.Each SPiN diodes string is also having direct current biasing line external voltage just
Pole.
It is multiple using the frequency reconfigurable plasma holographic antenna small volume of present embodiment, simple structure, easy to process, nothing
Miscellaneous feed structure, frequency can rapid jumping, and antenna close when will can be used for various frequency hopping radio sets in the stealthy state of electromagnetic wave
Or equipment；It is planar structure, it is easy to organize battle array because its all constituents is in semiconductor chip side, can be used as phased array
The basic component units of antenna.
Embodiment two
Fig. 3 is referred to, Fig. 3 is a kind of preparation method of SiGe base heterojunctions SPiN diodes provided in an embodiment of the present invention
Schematic diagram.The preparation method may include steps of：
A () is on the SiGeOI substrates according to the first antenna arm, second antenna arm, the holographic annulus
The active zone position of the heterogeneous base of SiGe bases described in structure determination, and isolated area is set at the active zone position；
B () etches the SiGeOI substrates at the active zone position and forms p-type groove and N-type groove；
C () fills described p-type groove and the N-type groove, and using ion implantation technology in the p-type groove and described
P-type active area and N-type active area are formed at N-type grooved position；And
D () makes lead to form multiple SiGe base heterojunctions SPiN diodes on the SiGeOI substrates.
Wherein, in step (a), isolated area is set at the active zone position, including：
(a1) the first protective layer is formed in the SiGeOI substrate surfaces；
(a2) the first isolated area figure is formed on first protective layer using photoetching process；
(a3) the specified location etching described first using dry etch process in the first isolated area figure is protected
Layer and the SiGeOI substrates are to form isolation channel, and the depth of the isolation channel is more than or equal to the top layer of the SiGeOI substrates
The thickness of Ge；
(a4) isolation channel is filled to form the isolated area.
Wherein, step (b) can include：
(b1) the second protective layer is formed in the SiGeOI substrate surfaces；
(b2) the second isolated area figure is formed on second protective layer using photoetching process；
(b3) the specified location etching described second using dry etch process in the second isolated area figure is protected
Layer and the SiGeOI substrates are forming the p-type groove and the N-type groove.
Alternatively, before step (c), also include：
(x1) the p-type groove and the N-type groove are aoxidized so that the inwall shape of the p-type groove and the N-type groove
Into oxide layer；
(x2) using wet-etching technology the oxide layer of the p-type groove and the N-type trench wall is etched to complete
State the planarizing of p-type groove and the N-type trench wall.Specifically, planarizing process can adopt following steps：Oxidation p-type
Groove and N-type groove are so that the inwall of p-type groove and N-type groove forms oxide layer；P-type groove is etched using wet-etching technology
With the oxide layer of N-type trench wall completing the planarizing of p-type groove and N-type trench wall.This have the advantage that：Can be with
The projection for preventing trenched side-wall forms electric field concentrated area, causes Pi and Ni junction breakdowns.
Alternatively, step (c) can include：
(c1) the p-type groove and the N-type groove are filled using polysilicon；
(c2) after SiGeOI substrates described in planarizing process, on the SiGeOI substrates polysilicon layer is formed；
(c3) polysilicon layer described in photoetching, and using the method with glue ion implanting to the p-type groove and the N-type ditch
Groove position is injected separately into p type impurity and N-type impurity to form the p-type active area and the N-type active area and while shape
Into p-type contact zone and N-type contact zone；
(c4) photoresist is removed.
Wherein, step (d) can include：
(d1) silica is generated on the SiGeOI substrates；
(d2) impurity in the p-type active area and N-type active area is activated using annealing process；
(d3) in the p-type active area and the N-type surfaces of active regions lithography fair lead forming lead；
(d4) Passivation Treatment and photoetching PAD are forming multiple SiGe base heterojunctions SPiN diodes.
It is a kind of SiGe base heterojunctions SPiN diodes provided in an embodiment of the present invention please also refer to Fig. 4 and Fig. 5, Fig. 4
Structural representation；Fig. 5 is a kind of structural representation of SiGe base heterojunctions SPiN diode strings provided in an embodiment of the present invention.
Each SPiN diode string includes multiple SiGe base heterojunctions SPiN diodes, and these SPiN diodes serial connections.Institute
The SiGe base heterojunction SPiN diodes in SiGe base heterojunction SPiN diode strings are stated by P+ areas 27, N+ areas 26 and intrinsic region 22
Composition, metal contact zone 23 is located at P+ areas 27, and metal contact zone 24 is located at N+ areas 26, in SiGe base heterojunctions SPiN bis-
The metal contact zone 23 of the SiGe base heterojunction SPiN diodes of one end of pole pipe string is connected to the positive pole of direct current biasing, is in
The metal contact zone 24 of the horizontal SiGe base heterojunctions SPiN diodes of the other end of SiGe base heterojunction SPiN diode strings connects
The negative pole of direct current biasing is connected to, by applying DC voltage all SiGe in whole SiGe base heterojunctions SPiN diode strings can be made
Base heterojunction SPiN diodes are in forward conduction state.
Embodiment three
Fig. 6 a- Fig. 6 r are referred to, Fig. 6 a- Fig. 6 r are a kind of SiGe base heterojunctions SPiN diodes of the embodiment of the present invention
Preparation method schematic diagram.The present embodiment is long to prepare raceway groove on the basis of above-described embodiment on the basis of above-described embodiment
Spending as a example by the SiGe base heterojunction SPiN diodes for 22nm (solid plasma zone length is 100 microns) is carried out specifically
It is bright, comprise the following steps that：
Step 1, backing material preparation process：
(1a) as shown in Figure 6 a, the SiGeOI substrate slices 101 of (100) crystal orientation are chosen, doping type is p-type, doping content
For 1014cm-3, the thickness of top layer Si Ge is 50 μm；
(1b) as shown in Figure 6 b, using chemical vapor deposition (Chemical vapor deposition, abbreviation CVD)
Method, deposits on the sige layer a SiO of one layer of 40nm thickness2Layer 201；
(1c) using the method for chemical vapor deposition, a Si of one layer of 2 μ m thick is deposited on substrate3N4/ SiN layer
202；
Step 2, isolates preparation process：
(2a) as fig. 6 c, isolated area, wet etching isolated area are formed on above-mentioned protective layer by photoetching process
One Si3N4/ SiN layer 202, forms isolated area figure；Using dry etching, form wide 5 μm in isolated area, depth be 50 μm it is deep every
From groove 301；
(2b) as shown in fig 6d, using the method for CVD, SiO is deposited2401 fill up the deep isolation trench；
(2c) as shown in fig 6e, using chemically mechanical polishing (Chemical Mechanical Polishing, abbreviation
CMP) method, removes the Si of surface the3N4The SiO of/SiN layer 202 and the2Layer 201, makes the substrate surface smooth；
Step 3, P, N area deep trouth preparation process：
(3a) as shown in Figure 6 f, using CVD method, consecutive deposition prolongs two layer materials on substrate, and ground floor is that 300nm is thick
2nd SiO of degree2Layer 601, the second layer is the 2nd Si of 500nm thickness3N4/ SiN layer 602；
(3b) as shown in figure 6g, photoetching P, N areas deep trouth, the Si of wet etching P, N areas the 2nd3N4The SiO of/SiN layer 602 and the 2nd2
Layer 601, forms P, N area figure；Using dry etching, form wide 4 μm in P, N area, deep 5 μm deep trouth 701, the length of P, N area groove
Degree determines according to the applicable cases in prepared antenna；
(3c) as shown in figure 6h, at 850 DEG C, high-temperature process 10 minutes, oxidation trough inwall forms oxide layer 801, so that
P, N area groove inwall is smooth；
(3d) as shown in Fig. 6 i, using wet-etching technology the oxide layer 801 of P, N area groove inwall is removed.
Step 4, P, N contact zone preparation process：
(4a) as shown in Fig. 6 j, using the method for CVD, the depositing polysilicon 1001 in P, N area groove, and groove is filled up；
(4b) as shown in Fig. 6 k, using CMP, the Si of surface polysilicon 1001 and the 2nd is removed3N4/ SiN layer 602, puts down surface
It is whole；
(4c) as shown in Fig. 6 l, using the method for CVD, in one layer of polysilicon 1201 of surface deposition, thickness is 200～
500nm；
(4d) as shown in Fig. 6 m, photoetching P areas active area carries out p using band glue ion injection method+Injection, makes P areas active
Area's doping content reaches 0.5 × 1020cm-3, photoresist is removed, form P contacts 1301；
(4e) photoetching N areas active area, using band glue ion injection method n is carried out+Injection, makes N areas active area doping content
For 0.5 × 1020cm-3, photoresist is removed, form N contacts 1302；
(4f) as shown in Fig. 6 n, using wet etching, the polysilicon 1201 beyond P, N contact zone is etched away, forms P, N and connect
Tactile area；
(4g) as shown in Fig. 6 o, using the method for CVD, in surface deposition SiO21501, thickness is 800nm；
(4h) at 1000 DEG C, anneal 1 minute, make the impurity activation of ion implanting and advance impurity in polysilicon；
Step 5, constitutes PIN diode step：
(5a) as shown in Fig. 6 p, the lithography fair lead 1601 in P, N contact zone；
(5b) as shown in Fig. 6 q, substrate surface splash-proofing sputtering metal forms metal silicide 1701 in 750 DEG C of alloys, and etches
Fall the metal on surface；
(5c) substrate surface splash-proofing sputtering metal, photoetching lead；
(5d) as shown in Fig. 6 r, Si is deposited3N4/ SiN forms passivation layer 1801, and photoetching PAD forms SiGe base heterojunctions
SPiN diodes, as the material for preparing holographic antenna.
SiGe base heterojunction SPiN diodes prepared by the present invention, the sige material for being used, due to its high mobility and
The characteristic of big carrier lifetime, improves the solid plasma bulk concentration of pin diodes；In addition, SiGe base heterojunctions SPiN bis-
The P areas of pole pipe employ the polysilicon damascene technique of the deep etching based on etching with N areas, and the technique can provide abrupt junction pi
Tie with ni, and pi knots, the junction depth of ni knots can be effectively improved, make the concentration of solid state plasma and the controllability increasing of distribution
By force, be conducive to preparing high performance plasma antenna；And prepared by the present invention is applied to the SPiN diodes of holographic antenna
A kind of Deep trench isolation technique based on etching is employed, the breakdown voltage of device is effectively improved, it is suppressed that leakage current
Impact to device performance.
Above content is to combine specific preferred embodiment further description made for the present invention, it is impossible to assert
The present invention be embodied as be confined to these explanations.For general technical staff of the technical field of the invention,
On the premise of without departing from present inventive concept, some simple deduction or replace can also be made, should all be considered as belonging to the present invention's
Protection domain.
Claims (10)
1. a kind of preparation method based on SiGe base heterojunction frequency reconfigurable holographic antennas, it is characterised in that the holographic day
Line includes SiGeOI materials, first antenna arm, the second antenna arm, coaxial feeder, direct current biasing line and holographic annulus；Wherein, institute
Stating preparation method includes：
According to the multiple SiGe base heterojunctions SPiN diodes of structure fabrication of the holographic antenna on the SiGeOI substrates, and
The P areas of the SiGe base heterojunctions SPiN diodes adopt Si materials using Si materials, i areas using sige material and N areas；
Multiple SiGe base heterojunctions SPiN diodes are sequentially interconnected in into PAD to form multiple poles of SiGe base heterojunctions SPiN bis-
Pipe string；
Direct current is made using semiconductor technology between the SiGe base heterojunctions SPiN diodes string and DC bias supplies inclined
Put line to realize the connection of the SiGe base heterojunctions SPiN diodes string and DC bias supplies；
The coaxial feeder is made to connect the first antenna arm and second antenna arm, the holographic day is ultimately formed
Line.
2. preparation method according to claim 1, according to the structure system of the holographic antenna on the SiGeOI substrates
Make multiple SiGe base heterojunctions SPiN diodes, including：
(a) on the SiGeOI substrates according to the first antenna arm, second antenna arm, the holographic annulus structure
Determine the active zone position of the heterogeneous base of the SiGe bases, and isolated area is set at the active zone position；
B () etches the SiGeOI substrates at the active zone position and forms p-type groove and N-type groove；
C () fills the p-type groove and the N-type groove, and using ion implantation technology in the p-type groove and the N-type
P-type active area and N-type active area are formed at grooved position；And
D () makes lead to form multiple SiGe base heterojunctions SPiN diodes on the SiGeOI substrates.
3. preparation method according to claim 2, it is characterised in that isolated area, bag are set at the active zone position
Include：
(a1) the first protective layer is formed in the SiGeOI substrate surfaces；
(a2) the first isolated area figure is formed on first protective layer using photoetching process；
(a3) using dry etch process the specified location of the first isolated area figure etch first protective layer and
The SiGeOI substrates are to form isolation channel, and the depth of the isolation channel is more than or equal to the top layer Ge's of the SiGeOI substrates
Thickness；
(a4) isolation channel is filled to form the isolated area.
4. preparation method according to claim 2, it is characterised in that step (b) includes：
(b1) the second protective layer is formed in the SiGeOI substrate surfaces；
(b2) the second isolated area figure is formed on second protective layer using photoetching process；
(b3) using dry etch process the specified location of the second isolated area figure etch second protective layer and
The SiGeOI substrates are forming the p-type groove and the N-type groove.
5. preparation method according to claim 2, it is characterised in that before step (c), also include：
(x1) the p-type groove and the N-type groove are aoxidized so that the inwall of the p-type groove and the N-type groove forms oxygen
Change layer；
(x2) etch the oxide layer of the p-type groove and the N-type trench wall to complete the p-type using wet-etching technology
The planarizing of groove and the N-type trench wall.
6. preparation method according to claim 5, it is characterised in that step (c), including：
(c1) the p-type groove and the N-type groove are filled using polysilicon；
(c2) after SiGeOI substrates described in planarizing process, on the SiGeOI substrates polysilicon layer is formed；
(c3) polysilicon layer described in photoetching, and using the method with glue ion implanting to the p-type groove and the N-type groove institute
P type impurity and N-type impurity are injected separately in position to form the p-type active area and the N-type active area and while form p-type
Contact zone and N-type contact zone；
(c4) photoresist is removed.
7. preparation method according to claim 2, it is characterised in that step (d) includes：
(d1) silica is generated on the SiGeOI substrates；
(d2) impurity in the p-type active area and N-type active area is activated using annealing process；
(d3) in the p-type active area and the N-type surfaces of active regions lithography fair lead forming lead；
(d4) Passivation Treatment and photoetching PAD are forming multiple SiGe base heterojunctions SPiN diodes.
8. preparation method according to claim 1, it is characterised in that the SiGe base heterojunctions SPiN diodes string with
Direct current biasing line is made using semiconductor technology between DC bias supplies, including：
Using CVD techniques, prepare between the SiGe base heterojunctions SPiN diodes string and DC bias supplies and form described
Direct current biasing line, the direct current biasing line is prepared using copper, aluminium or highly doped polysilicon.
9. preparation method according to claim 1, it is characterised in that make the coaxial feeder, including：
The internal core wire of the coaxial feeder is connected to into the metal contact piece of the first antenna arm and by outside the coaxial feeder
Conductor is connected to the metal contact piece of second antenna arm.
10. preparation method according to claim 1, it is characterised in that the holographic annulus is by described in multistage is isometric
The regular polygon structure of SPiN diode string arrangement forms, wherein, the length of side of the regular polygon and the first antenna arm and
The second antenna arm lengths sum is identical, or the radius of the circumscribed circle of the regular polygon be the holographic antenna receive or
3/4ths of the electromagnetic wavelength of transmission.
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